High frequency solid-state switches are critical elements in communication systems, radio frequency (RF) systems and instrumentation. Key parameters to an RF switch include insertion loss while on and off-state isolation. Power handling and linearity are important to consider for a cost-effective construction. This becomes a design challenge into K-band frequencies as components required need to be small, dielectric losses and transmission lines need to be physically matched for proper isolative and through states. This thesis presents a novel single pole eight throw (SP8T) hybrid design composed of commercially available surface mount technology solutions to achieve high isolation and low insertion loss from 2-20GHz. A range of PIN diode solutions were surveyed against key design requirements for the SP8T hybrid switch. There were no commercially available solutions for a SP8T switch using surface mount components. A SP2T switch is combined with two SP4T to make the hybrid model. A wide range of RF switch topologies were simulated and designed into a printed circuit board panel that includes 15 test structures. This board is fabricated on a low loss dielectric material with a 4-layer stack that is operational up to 20 GHz and beyond. An onboard calibration structure including STOL standards are tested through a vector network analyzer to determine losses and reflection. Each switch design is on its own board to better determine the performance of the SP8T hybrid. High frequency coplanar waveguide to 2.4mm coaxial connectors are used to evaluate each board. This design is characterized against individual MMIC and PIN diode boards through switched states in decibels (dB). Second harmonic content is also measured at a target frequency at 2.4GHz for all configurations to determine the magnitude of undesirable spectral content with input power no greater than 10dBm. Results display acceptable loss in the lower half of the frequency band and narrow resonance nearer to 20 GHz due to board loss and reflections. This design has been successful in its design and operation at broadband RF frequencies. Performance characteristics are given in the summary section. Details of the design process and measurement methodology are given in the body of this thesis.

La réglementation mondiale, pour des appareils de courte portée, permet l’utilisation sans licence de plusieurs Gigahertz de bande autour de 60 GHz. La bande des 60 GHz répond aux besoins des applications telles que les réseaux de capteurs très haut débit autonome en énergie,ou les transmissions à plusieurs Gbit/s avec des contraintes de consommation d’énergie. Il y a encore peu de temps, les interfaces radios fonctionnant dans la bande millimétrique n’étaient réalisables qu’en utilisant des technologies III-V couteuses. Aujourd’hui, les avancées des technologies CMOS nanométriques permettent la conception et la production en masse des circuits intégrées radiofréquences (RFIC) à faible coût.Cette thèse s’inscrit dans des travaux de recherches dédiés à la réalisation d’un système dans un boîtier (SiP, System in Package) à 60 GHz contenant à la fois l’interface radio (bande de base et circuits RF) ainsi qu’un réseau d’antennes. La première partie de cette thèse est dédiée la conception de la tête RF de l’émetteur-récepteur à faible consommation pour l’interface radio. Les blocs clefs de cette tête RF (amplificateurs, mélangeurs et un oscillateur commandé en tension) sont conçus, réalisés et mesurés en utilisant la technologie CMOS 65 nm de ST Microelectronics. Des éléments actifs et passifs sont développés spécifiquement pour l’utilisation au sein de ces blocs. Une étape importante vers l’intégration de la tête RF complète de l’émetteur-récepteur est l’assemblage de ces blocs de base afin de réaliser une puce émetteur et une puce récepteur. A ce but, une tête RF pour le récepteur a été réalisée. Ce circuit présent une consommation et un encombrement plus réduit que l’état de l’art.La deuxième partie de cette thèse présente le développement des modèles comportementaux des blocs de base conçus. Ces modèles au niveau système sont nécessaires afin de simuler le comportement du SIP, qui devient trop complexe si des modèles détaillés du niveau circuitsont utilisés. Dans cette thèse, une nouvelle technique modélisant le comportement en régime transitoire et régime permanent ainsi que le bruit de phase des oscillateurs commandés en tension est proposée. Ce modèle est implémenté dans le langage de description de matérielVHDL-AMS. La technique proposée utilise des réseaux de neurones artificiels pour approximer la caractéristique non linéaire du circuit. La dynamique est décrite dans l’espace d’état. Grâce à ce modèle, il est possible de réduire d’une façon drastique le temps de calcul des simulations système tout en conservant une excellente précision / Worldwide regulations for short range communication devices allow the unlicensed use of several Gigahertz of bandwidth in the frequency band around 60GHz. This 60GHz band is ideally suited for applications like very high data rate, energy-autonomous wireless sensor networks or Gbit/s multimedia links with low power constraints. Not long ago, radio interfaces that operate in the millimeter-wave frequency range could only be realized using expensive compound semiconductor technologies. Today, the latest sub-micron CMOS technologies can be used to design 60GHz radio frequency integrated circuits (RFICs)at very low cost in mass production. This thesis is part of an effort to realize a low power System in Package (SiP) including both the radio interface (with baseband and RF circuitry) and an antenna array to directly transmit and receive a 60GHz signal. The first part of this thesis deals with the design of the low power RF transceiver front-end for the radio interface. The key building blocks of this RF front-end (amplifiers, mixers and a voltage controlled oscillator (VCO)) are designed, realized and measured using the 65nm CMOS technology of ST Microelectronics. Full custom active and passive devices are developed for the use within these building blocks. An important step towards the full integration of the RF transceiver front-end is the assembly of these building blocks to form basic transmitter and receiver chips. Circuits with small chip size and low power consumption compared to the state of the art have been accomplished.The second part of this thesis concerns the development of behavioral models for the designed building blocks. These system level models are necessary to simulate the behavior of the entire SiP, which becomes too complex when using detailed circuit level models. In particular, a novel technique to model the transient, steady state and phase noise behavior of the VCO in the hardware description language VHDL-AMS is proposed and implemented. The model uses a state space description to describe the dynamic behavior of the VCO. Its nonlinearity is approximated by artificial neural networks. A drastic reduction of simulation time with respect to the circuit level model has been achieved, while at the same time maintaining a very high level of accuracy

Ces travaux de thèse portent sur l‟étude de filtres « multi-fonctions » dont l‟objectif serait de réduire les dimensions des circuits réalisant les fonctions de filtrage dans les systèmes aéroportés. Ces travaux ont donc conduit à la réalisation de filtres large bande (2 – 18 GHz) réjecteurs développés en technologie MMIC utilisant la filière GaN, ainsi que des filtres large bande développés suivant la filière AsGa en technologie MMIC. Les différents filtres réjecteurs ont été conçus suivant deux principes :- Le premier basé sur une structure à résonateurs à lignes couplées. Les différents prototypes réalisés ont permis de montrer l‟accordabilité en fréquence grâce à une charge variable placée à l‟extrémité non court-circuité de la ligne couplée. Celle-ci peut être réalisée par une diode varactor ou par un transistor froid. Ces prototypes ont également permis de montrer la possibilité de fonctionner suivant un mode passe-tout ou un mode réjecteur par simple polarisation de transistors chargés à l‟extrémité de la ligne couplée.- Le second est basé sur l‟accordabilité de filtres actifs par commutation entre plusieurs canaux à l‟aide d‟une structure distribuée. Un prototype a été développé et réalisé en technologie AsGa. Cette structure permet à la fois une accordabilité en fréquences, ainsi qu‟en largeur de bande passante (par activation de plusieurs canaux de bandes passantes adjacentes), et une adaptation large bande. Cette structure réunit à la fois des fonctions d‟accordabilité en fréquences (entre 8,7 et 15,6 GHz) par polarisation d‟éléments actifs, ceux-ci permettant même d‟obtenir du gain (de l‟ordre de 10 dB). / The aim of this work is to study “multi-functions” filters with an objective to reduce the dimensions of the circuits used for filtering functions in airborne systems. This work allows to obtain wide band notch filters (from 2 to 18 GHz) developed in MMIC technology using theEtude de Filtres MMIC Hyperfréquences en Technologies GaN et AsGa. 152GaN process and wide band filters developed in GaAs technology. The notch filters have been realized with two principles:- The first one based on coupled lines resonators structure. The prototype manufactured allow to validate the frequency tunability thanks to a variable load placed at the end of the coupled line. This can be realized with a varactor diode or with a cold transistor. These prototypes allow also validating the possibility for the circuit to work as an “allpass” filter or as a notch filter by applying a bias voltage on the transistors placed at the end of the coupled line.- The second one is based on the tenability of active filters by commuting between several channels thanks to a distributed structure. A prototype has been developed and manufactured in GaAs technology. This structure allow a frequency tunability with also the possibility to tune the bandwidth (by activating seeral channels with edge bandwidth), and a wide band matching. This structure allows to obtain frequency tunability (between 8.7 and 15.6 GHz) by applying a bias voltage on the active elements which brin gain (around 10 dB).

Les transistors à haute mobilité d’électrons (HEMTs) en Nitrure de Gallium (GaN) s’affirment aujourd’hui comme une technologie essentielle à l’amplification de puissance à haute fréquence. Les HEMTs GaN étudiées et développées reposent essentiellement sur une hétérostructure AlGaN/GaN mais une alternative à base d’une barrière composée en InAlN, réduisant les contraintes sur les mailles cristallographiques de l’ensemble, est étudiée par certains laboratoires. Ce manuscrit de thèse rapporte une étude des potentialités de la filière HEMT InAlN/GaN développée au III-V Lab, en s’intéressant tout particulièrement aux effets de pièges induits par des défauts présents au sein de la structure. Une méthode de détection de ces défauts est proposée, basée sur la mesure de paramètres [S] en basse fréquence. Un modèle de HEMT InAlN/GaN électrothermique comprenant la contribution des effets de pièges est rapporté et sert de base à la conception d’un amplificateur de puissance en technologie MMIC, fonctionnant en bande Ka, présenté au dernier chapitre. / Nowadays, High Electron Mobility Transistors (HEMTs) in Gallium Nitride (GaN) take the lead in power amplification at microwave frequencies. Most of the studies and developments on those HEMTs concern AlGaN/GaN structures but alternative transistors with an InAlN barrier, which reduces the strain in the crystal lattice of the whole structure, are investigated by few laboratories. This thesis presents some advanced studies on the new InAlN/GaN HEMT developed by the III-V Lab, focusing on the trapping phenomena induced by defects inside the crystal structure. A new method for the characterization of these defects, based on low-frequency S-Parameters measurements, is proposed. Furthermore, a non-linear electro thermal model including trapping effects for an InAlN/GaN HEMT is detailed and used to design a MMIC power amplifier for Ka-band applications.

Dans un monde où l’information va de plus en plus vite, il est important de pouvoir rester connecté en permanence. De nouvelles solutions émergent pour connecter les passagers à bord d’un avion grâce aux communications par satellite. Parmi elles, on retrouve les antennes à pointage électronique dans lesquelles cette thèse de doctorat s’intègre. Une étude sur les différentes antennes existantes ou en projet est présentée. Les puces électroniques MMIC AsGa permettent d’appliquer des lois d’amplitude et de phase pour chaque élément rayonnant d’une antenne réseau. Cette thèse de doctorat porte sur la conception d’un déphaseur, après avoir étudié les technologies et les topologies de celui-ci. Ensuite, la conception d’un amplificateur faible bruit à gain variable est proposée à partir d’un état de l’art. Les résultats de simulation et de mesures de ces deux fonctions sont exposés. / In a world where the information is moving faster and faster, it is important to be able to stay connected continuously. Some new solutions for air transport connectivity are in development thanks to the rise of satellite communications. This thesis work is part of an electronically steerable antenna array project, developed as a solution to achieve In-Flight Connectivity in Ka-band. A state- of-the art review on electronically steerable antenna arrays is also presented. In these arrays, each radiating element needs a specific amplitude and phase to obtain a scanning beam by adding their contribution. This thesis focus on the design of a GaAs MMIC chip inclusion two functions: a phase shifter and a variable-gain low-noise amplifier. The simulation and measurement results are presented for these two functions.

Разработан прототип приемника-декодера сигналов стандарта ADS-B. В ходе разработки предложена структурная схема выполнения устройства, а так же проведено комплексное исследование элементов устройства. Предложены принципиальные схемы и прототипы печатных плат для таких устройств как усилитель, инжектор питания, малошумящий усилитель, логарифмический детектор, а так же рассмотрена топология фильтра с двойной комплементарной спиралью. Приводятся результаты моделирования в различных пакетах программного обеспечения перечисленных выше устройств, а так же результаты их экспериментального исследования. Для обеспечения симуляции сигналов стандарта, а так же для обработки создано программное обеспечение. / A prototype of the receiver-decoder for the ADS-B system. During the development the block diagram of the device was proposed and a comprehensive study of elements of the device was done. Circuit schematics and layouts of printed circuit boards for devices such as amplifier, power injector, low noise amplifier, logarithmic detector and filter with a double complementary spiral were proposed. The results of the simulation of the listed above devices in a variety of software packages, as well as the results of an experimental study are presented. In order to simulate the signals, as well as for processing them special software was created.

The presentation highlights research on theory, design, EM modeling, fabrication, packaging, and measurement of GaAs Monolithic Microwave Integrated Circuits (MMICs). The goal of this work is to design MMIC LNAs with low noise figure, high gain, and wide bandwidth. The work aims to develop GaAs MMIC LNAs for the application of RF front-end receivers in radio telescopes. GaAs MMIC technology offers modern radio astronomy attractive solutions based on its advantage in terms of high operational frequency, low noise, excellent repeatability and high integration density. Theoretical investigations are performed, presenting the formulation and graphical methods, and focusing on a systematic method to design a low noise amplifier for the best noise, gain and input/output return loss. Additionally, an EM simulation method is utilized and successfully applied to MMIC designs. The effect of packaging including the wire bond and chassis is critical as the frequency increases. Therefore, it is modeled by full-wave analysis where the measured results verify the reliability of these models. The designed MMICs are validated by measurements of several prototypes, including three C/X band and one Q band MMIC LNAs. Moreover, comparison to similar industrial chips demonstrates the superiority of the proposed structures regarding bandwidth, noise and gain flatness, and making them suitable for use in radio astronomy receivers. / Graduate / 2020-05-01

Four main aspects are studied and explored throughout this dissertation: (1) On-Package Multipolar antenna system design for integration with commercial wireless sensor nodes for machine-to-machine communication applications; (2) Development of a novel MMIC packaging process and subsequent antenna integration for chip-to-chip communication applications, (3) Design and characterization of additively manufactured lumped passive elements for integration with MMIC and hybrid circuits, (4) Design and characterization of antennas for on- and off-metal radio frequency identification (RFID) applications. This work presents the design of different 3-D printed tripolar antenna systems operating at 2.4 GHz. The antennas are designed for integration with commercial wireless nodes with the purpose of mitigating multipath and depolarization channel effects that might be present in many machine-to-machine (M2M) deployments. The antennas are fabricated utilizing an additive manufacturing (AM) approach that combines fused deposition modeling (FDM) of ABS plastic for dielectric parts and micro-dispensing of silver paste Du-Pont CB028 for conductive layers as the majority of the devices presented in this work. Over the air testing demonstrates a 1% channel improvement of up to 14 dB, achieved in a highly-reflective, Rayleigh-like fading environment by implementing selection diversity between three mutually orthogonal monopoles. This improvement leads to better bit error rate (BER) performance (as is also shown). Additionally, RSSI measurements show significant improvement when the prototype antenna system is integrated with commercial wireless sensor hardware. Implications of tripolar antenna integration on M2M systems include reduction in energy use, longer communication link distances, and/or greater link reliability. In order to incorporate the proposed multipolar selection diversity technique into short range wireless chip-to-chip communications, a novel and versatile 3D printed on-chip integration approach using laser machining is subsequently demonstrated for microwave and mm-wave systems in a process herein referred to as Laser Enhanced or Laser Assisted Direct Print Additive Manufacturing (LE-DPAM). The integration process extends interconnects laterally from a MMIC to a chip carrier. Picosecond laser machining is applied and characterized to enhance the 3D printing quality. Specifically, the width of micro-dispensed printed traces is accurately controlled within micrometer range (e.g. laser cuts ~12 μm wide), additionally, 150 μm probe pads are cut in order to facilitate RF measurement. The S-parameters of a distributed amplifier integrated into the package are simulated and measured from 2 to 30 GHz. It is seen how the overall performance is significantly better than a traditional wirebonded QFN package and previously reported AM MMIC interconnections. The attenuation of the microstrip line including interconnects is only 0.2 dB/mm at 20 GHz and return loss with the package is less than 10 dB throughout the operating frequency band A 17 GHz package integrated linearly polarized patch antenna, fabricated with a multi-layer and multi-material LE-DPAM process is then introduced for vertical interconnection with a MMIC die. Performance is successfully measured and characterized achieving a return loss greater than 19 dB at the desired design frequency. Good agreement between simulated and measured radiation patterns is also obtained with a peak gain of 4.2 dBi. Another section of this work utilizes LE-DPAM to fabricate lumped capacitors and inductors for coplanar waveguide (CPW) circuits, especially useful for filtering and matching network implementation. Laser machining is used to achieve ~12 µm slots on printed conductors, producing aspect ratios greater than 2:1, as well as to fabricate vertical interconnects or vias that allow for the fabrication of the multilayer inductors. Inductances in the range of 0.4-3 nH are achieved, with a maximum quality factor of 21, self-resonance frequencies up to 88 GHz, and an inductance per unit of area of 5.3 nH/mm2. Interdigital capacitors in the range of 0.05-0.5 pF are fabricated, having a maximum quality factor of 750 and self-resonances up to 120 GHz. All the components are made on the center line of a CPW that is 836 µm wide. The results show that LE-DPAM enables the fabrication of compact passive circuits that can be easily interconnected with MMIC dies, which at the same time, can be manufactured as part of a larger component. This enables the fabrication of structural electronics that are functional into the mm-wave frequency range. A final aspect of this work goes through antenna designs for specific RFID (radio frequency identification) applications. RFID tag design is generally focused specifically on either off-metal or on-metal configurations. In this work passive 2D and 3D RFID tags are presented which perform similarly in both configurations. The presented tags operate in the ISM RFID UHF bands that cover 864-868 MHz and 902-928 MHz. A matching loop consisting of two parallel stubs to ground is used for impedance matching to a passive integrated circuit, which has -18 dBm sensitivity. A planar 2D tag with a footprint of 13126.5 mm2 is first introduced, showing a simulated gain of approximately 3 dBi and a measured read range of 10 m (for 31 dBm transmit power from the reader) in both on-metal and off-metal conditions. The tag is miniaturized into a 3D geometry with a footprint of 2524.25 mm2 (520% reduction) and achieves the same broadside simulated on-metal gain. The antennas are fabricated using a DPAM process, and a meshed ground configuration is explored in order to accomplish a 50% conductive paste reduction without disrupting the performance. The proposed tags are compared with commercially available tags as well as previously published tags in terms of read range and size. The tags in this work present an improvement in terms of read range, gain, and area with respect to previous designs covering the ISM RFID UHF bands. Moreover, the performance of these tags is maintained in on- and off-metal conditions, achieving comparable performance and a reduction in volume of 11482% with respect to the best tag reported.

Ce travail est une contribution à la conception de diviseurs de fréquence analogiques réalisés en technologie monolithique à base de transistors pseudomorphiques à haute mobilité électronique aux fréquences micro-ondes. Après avoir décrit les divers circuits existants en choisissant une classification originale selon les différents principes régissant la division de fréquence, nous développons une approche analytique basée sur des modèles simplifiés afin de trouver les paramètres essentiels du phénomène. Nous expérimentons également diverses méthodes d'analyse sur calculateur avec pour objectif le développement d'une approche méthodologique générale. Finalement, la méthode dite "de la boucle ouverte" est choisie pour la conception de circuits. Lors de son utilisation, il est à noter que des processus proches de cascades de bifurcations chaotiques sont observés. Une étude complémentaire présentée permet de vérifier qu'ils ne sont pas directement liés à la stabilité (physique) du dispositif. Ces travaux de modélisation sont pour la suite appliqués à la conception de deux diviseurs en technologie monolithique. Une large bande de synchronisation d'environ 30 % a été obtenue avec une topologie originale utilisant un transistor non polarisé sur le drain. Les résultats expérimentaux sont ensuite comparés aux simulations effectuées précédemment ainsi qu'aux performances déjà publiées sur des circuits de ce type. Enfin, une dernière partie est consacrée au bruit de phase dans les diviseurs de fréquences.

This thesis concerns the introduction and development in our laboratory of a multilayer ceramic technology, called LTCC, for RF and microwave packaging. LTCC stands for Low Temperature Co-fired Ceramics. As can be understood from its name, the low temperature means that the LTCC circuit is fired below 1000 °C that allows the use of high conductivity materials such as gold and silver. The thesis work starts after the bibliographic study of RF packaging technology, with the choice of LTCC substrate and conductor materials necessary to implement LTCC technology in our laboratory. Then, the LTCC manufacturing process is put in place and validated in order to produce operational LTCC circuits. This process includes the cut of LTCC layers, via hole and cavity creation, via fill for vertical interconnecting, screen printing for horizontal patterns, stacking, lamination and finally the firing to obtain a 3D circuit. Most encountered technological problems are resolved and the fabrication steps are validated. LTCC DESIGN RULES that contain all dimensional values required for future RF packaging designers at the laboratory is elaborated. Next, after the successful establishment of LTCC technology, it is qualified up to 40 GHz using simple RF structures such as transmission lines and planar resonators. Then, a multilayer LTCC package for an MMIC oscillator functioning in the frequency band between 10.6 and 12.6 GHz is proposed, fabricated and finally measured.