• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 503
  • 157
  • 114
  • 86
  • 25
  • 20
  • 15
  • 9
  • 7
  • 6
  • 6
  • 5
  • 4
  • 4
  • 4
  • Tagged with
  • 1180
  • 201
  • 167
  • 109
  • 101
  • 98
  • 94
  • 94
  • 92
  • 91
  • 89
  • 87
  • 87
  • 82
  • 82
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
561

Nanostructures Al(Ga)N/GaN pour l'optoélectronique intersousbande dans l'infrarouge proche et moyen

Kandaswamy, Prem Kumar 29 June 2010 (has links) (PDF)
Ce travail a porté sur la modélisation, l'épitaxie et la caractérisation de puits quantiques et de boîtes quantiques Al(Ga)N/GaN, qui forment la région active de composants intersousbande (ISB) opérant dans l'infrarouge proche (NIR) et l'infrarouge moyen (MIR). La croissance de ces structures a été réalisée par épitaxie par jets moléculaires. La caractérisation optique infrarouge montre que les champs électriques induits par la polarisation introduisent un décalage vers le bleu des transitions et peuvent modifier de façon critique la magnitude de l'absorption. Les boîtes quantiques (QDs) de GaN/AlN confinées en trois dimensions introduisent de nombreuses nouvelles propriétés pour leur utilisation en tant que région active de composants ISB. La croissance des QDs a été réalisée dans des conditions riche-Ga et riche-N. Les études spectroscopiques révèlent l'absence de recombinaisons non radiatives même dans le cas de QDs ayant des longs temps de vie. Les photodétecteurs fabriqués à partir de superréseaux de QDs de GaN/AlN présentent un photocourant dans le NIR et dans le MIR attribué respectivement aux transitions s-pz et s-pxy. Le courant d'obscurité dépend de la densité des QDs dû au transport hopping. Prévoyant l'importance des composants ISB dans les régions spectrales du MIR et de l'infrarouge lointain, nous avons obtenu une extension de la longueur d'onde ISB jusqu'à ~ 10 µm. Ce résultat a été obtenu en diminuant le champ électrique interne et en réduisant le confinement dans les puits quantiques GaN/AlGaN. Le dopage peut introduire un décalage vers le bleu de plus de 50% de l'énergie de transition ISB dû aux effets des corps multiples.
562

Ballistic Transport in Nanostructures, and its Application to Functionalized Nanotubes

Marzari, Nicola 01 1900 (has links)
We developed and implemented a first-principles based theory of the Landauer ballistic conductance, to determine the transport properties of nanostructures and molecular-electronics devices. Our approach starts from a quantum-mechanical description of the electronic structure of the system under consideration, performed at the density-functional theory level and using finite-temperature molecular dynamics simulations to obtain an ensemble of the most likely microscopic configurations. The extended Bloch states are then converted into maximally-localized Wannier functions to allow us to construct the Green's function of the conductor, from which we obtain the density of states (confirming the reliability of our microscopic calculations) and the Landauer conductance. A first application is presented to the case of pristine and functionalized carbon nanotubes. / Singapore-MIT Alliance (SMA)
563

Metal Oxide Thin Films and Nanostructures Made by ALD

Rooth, Mårten January 2008 (has links)
Thin films of cobalt oxide, iron oxide and niobium oxide, and nanostructured thin films of iron oxide, titanium oxide and multilayered iron oxide/titanium oxide have been deposited by Atomic Layer Deposition (ALD). The metal oxides were grown using the precursor combinations CoI2/O2, Fe(Cp)2/O2, NbI5/O2 and TiI4/H2O. The samples were analysed primarily with respect to phase content, morphology and growth characteristics. Thin films deposited on Si (100) were found to be amorphous or polycrystalline, depending on deposition temperature and the oxide deposited; cobalt oxide was also deposited on MgO (100), where it was found to grow epitaxially with orientation (001)[100]Co3O4||(001)[100]MgO. As expected, the polycrystalline films were rougher than the amorphous or the epitaxial films. The deposition processes showed properties characteristic of self-limiting ALD growth; all processes were found to have a deposition temperature independent growth region. The deposited films contained zero or only small amounts of precursor residues. The nanostructured films were grown using anodic aluminium oxide (AAO) or carbon nanosheets as templates. Nanotubes could be manufactured by depositing a thin film which covers the pore walls of the AAO template uniformly; free-standing nanotubes retaining the structure of the template could be fabricated by removing the template. Multilayered nanotubes could be obtained by depositing multiple layers of titanium dioxide and iron oxide in the pores of the AAO template. Carbon nanosheets were used to make titanium dioxide nanosheets with a conducting graphite backbone. The nucleation of the deposited titanium dioxide could be controlled by acid treatment of the carbon nanosheets.
564

Near-infrared photodetectors based on Si/SiGe nanostructures

Elfving, Anders January 2006 (has links)
Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. Heterojunction bipolar phototransistors were fabricated with 10 Ge dot layers in the base-collector (b-c) junction. With the illumination of near infrared radiation at 1.31 to 1.55 µm, the incident light would excite the carriers. The applied field across the b-c junction caused hole transport into the base, leading to a reduced potential barrier between the emitter-base (e-b) junction. Subsequently, this resulted in enhanced injection of electrons across the base into the collector, i.e., forming an amplified photo-induced current. We have therefore obtained significantly enhanced photo-response for the Ge-dot based phototransistors, compared to corresponding quantum dot p-i-n photodiodes. Responsivity values up to 470 mA/W were measured at 1.31 µm using waveguide geometry, and ∼2.5 A/W at 850 nm, while the dark current was as low as 0.01 mA/cm2 at –2 V. Metal-oxide field-effect phototransistors were also studied. These lateral detectors were processed with three terminals for source, drain and gate contacts. The Ge quantum dot layers were sandwiched between pseudomorphically grown SiGe quantum wells. The detector devices were processed using a multi-finger comb structure with an isolated gate contact on top of each finger and patterned metal contacts on the side edges for source and drain. It was found that the photo-responsivity was increased by a factor of more than 20 when a proper gate bias was applied. With VG above threshold, the measured response was 350 and >30 mA/W at 1.31 and 1.55 µm, respectively. Properties of Si/Si1-xGex nanostructures were examined, in order to facilitate proper design of the above mentioned transistor types of photodetectors. The carrier recombination processes were characterized by photoluminescence measurements, and the results revealed a gradual change from spatially indirect to direct transitions in type II Si1-xGex islands with increased measurement temperature. Energy dispersive X-ray spectrometry of buried Ge islands produced at different temperatures indicated a gradual decrease of the Ge concentration with temperature, which was due to the enhanced intermixing of Si and Ge atoms. At a deposition temperature of 730°C the Ge concentration was as low as around 40 %. Finally, the thermal stability of the Si/SiGe(110) material system, which is a promising candidate for future CMOS technology due to its high carrier mobility, was investigated by high resolution X-ray diffraction reciprocal space mapping. Anisotropic strain relaxation was observed with maximum in-plane lattice mismatch in the [001] direction. / On the day of the defence date the status of article IV was Manuscript and the title was "A three-terminal Ge dot/SiGe quantum well MOSFET photodetector for near infrared light detection"; the status of article VI was Submitted and the title was "Band alignment studies in Si/Ge quantum dots based on optical and structural investigations"; the status of article VII was Manuscript and the title was "Thermal stability of SiGe/Si(110) investigated by high-resolution X-ray diffraction reciprocal space mapping".
565

Synthesis and Characterisation of Potential Hydrogen Storage Materials

Johansson, Emil January 2004 (has links)
The dissociative and non-dissociative hydrogen uptake in carbon nanostructures and metallic films were investigated by measurements and analysis of solubility isotherms. The total, non-dissociative, uptake for multi-walled nano-barrels and amorphous nanoporous carbon was determined to be 6.2 and 4.2 wt. % respectively at 77 K and the adsorption energies (at lowest coverage) -7.2 and -4.2 kJ/mol. At 298 K the H-uptake was negligible. At low concentrations the H-uptake of Nb-films is strongly affected by the film thickness. For thicknesses less then about 31 nm, the absorption energy was found to be temperature dependent. Such changes have not been observed in Nb films before. The presence of multiple absorption energies was shown to limit the possibility to obtain relevant absorption and interaction energies by traditional Sievert's and van 't Hoff analysis. The Mg1-xNix system (0<0.43) was investigated with respect to the hydrogen uptake. For Mg2Ni the hydrogen uptake, at an external hydrogen pressure of 1 bar, is close to 1.33 H/M (Mg2NiH4). The enthalpy of formation is smaller in the film as compared to bulk material. The changes in the absorption energy are caused by the adhesion to the substrate as well as the nanocrystallinity of the absorbing layers. The optical band gap of Mg2NiH4 was determined to be 2.4 eV. In Mg1-xYx (0<0.17) it was found that the Y-concentration limits the hydrogen uptake at 1 bar. However, the kinetics of the uptake improves substantially with a minimum of 7 at.% of Y. For Mg-Y the optical band gap (3.6 eV) is independent of Y concentration within the concentration range investigated, while the transmittance decreases with increasing Y content.
566

In Situ Quantitative Mechanical Characterization and Integration of One Dimensional Metallic Nanostructures

January 2011 (has links)
One dimensional (1-D) metallic nanostructures (e.g. nanowires, nanorods) have stimulated great interest recently as important building blocks for future nanoscale electronic and electromechanical devices. In this thesis work, gold and nickel nanowires with various diameters were successfully fabricated, and two dedicated platforms, based on (1) a novel micro mechanical device (MMD) assisted with a quantitative nanoindenter and (2) a TEM-AFM sample holder system, were developed and adopted to perform in situ tensile tests inside SEM and TEM on samples with diameter ranging from a few nanometers to hundreds nanometers. Size-dependent mechanical behavior and different fracture mechanisms of gold nanowires had been revealed and discussed. In addition, we discovered cold welding phenomenon for ultrathin gold nanowires (diameter ∠ 10nm), which is anticipated to have potential applications in the future bottom-up integration of metallic 1-D nanostructures and next-generation interconnects for extremely dense logic circuits.
567

Quantum Plasmonics: A first-principles investigation of metallic nanostructures and their optical properties

January 2012 (has links)
The electronic structure and optical properties of metallic nanoparticles are theoretically investigated front first principles. An efficient implementation of time-dependent density functional theory allows a fully quantum mechanical description of systems large enough to display collective electron oscillations and surface plasmon modes. The results are compared with traditional classical electrodynamical approaches. Different regimes of interest are identified, both where classical electrodynamical models yield accurate descriptions, and where quantum effects are indispensable for understanding plasmonic properties in nanostructures. The limits of validity of classical electrodynamics are clearly established for the study of a variety of relevant geometries.
568

Synthesis and characterization of palladium based carbon nanostructure-composites and their clean-energy application

Nitze, Florian January 2013 (has links)
Carbon nanostructures are a wide field with many applications. The use of carbon nanostructures as support in heterogeneous catalysis is a key development that led together with the use of nanoparticles to a significant cost reduction of catalysts. Catalysts designed in this way are widely applied in fuel cell technologies. For portable devices especially low temperature fuel cells are desirable with low hazards for the user. One technology which fulfills these requirements is the direct formic acid fuel cell (DFAFC). DFAFC have many promising characteristics, such as high electromotive force and easy fuel handling. However, they still suffer from too low power output and lifetime for commercialization. This thesis focusses on two main aspects: the synthesis of carbon nanostructures by chemical vapor deposition (CVD) and their application as catalyst support. The materials are investigated by many different techniques ranging from transmission electron microscopy (TEM) to fuel cell tests. Different carbon nanostructures could be synthesized by catalytic CVD on palladium (Pd) nanoparticles. Multi-walled carbon nanotubes (MWCNTs), carbon nanofibers (CNFs) and helical carbon nanofibers (HCNFs) were grown, selectively, dependent on temperature, using acetylene as carbon precursor. Especially HCNF raised further interest due to their unique structure. A growth model for HCNFs was developed based on an anisotropic extrusion model. The synthesis conditions for HCNFs were optimized until an almost 100 % purity with very high efficiency was obtained. The unique helical but fiber-like structure made the material very interesting as support for heterogeneous catalysis. Several catalysts based on Pd nanoparticle decorated HCNFs were developed. The synthesis methods ranged from standard methods like the polyol method to phase-transfer methods. The catalysts showed very promising results for the electro-oxidation of methanol, ethanol and formic acid. This makes them highly attractive for fuel cell applications. The catalysts were tested in DFAFC. The superiority of HCNF-based catalysts is attributed to the good attachment of nanoparticles to the defect-rich and easy to functionalize surface of HCNFs in combination with adequate film forming properties during electrode preparation. / Nanostrukturerat kol är ett mycket brett fält med ett stort antal tillämpningar. Användning av kolnanostrukturer som support för heterogena katalysmaterial har tillsammans med utvecklingen av nanopartiklar lett till en avsevärd minskning av kostnaden för katalysatorer. Katalysatorer designade på detta sätt används frekvent i bränsleceller. För portabla tillämpningar är utvecklingen av säkra och miljövänliga lågtemperaturceller mycket viktig. En teknologi som uppfyller dessa kriterier är bränsleceller som drivs med myrsyra (DFAFC). Sådana bränsleceller har många önskvärda egenskaper, såsom en hög elektromotorisk kraft och en enkel hantering av bränslet. Trots dessa goda egenskaper har de också en del nackdelar som hindrar en full kommersialisering. De två mest problematiska är en för låg genererad effekt samt en för kort livslängd på katalysatorerna. Denna avhandling fokuserar på två huvudpunkter som adresserar dessa problem; tillverkning och karaktärisering av kolnanostrukturer producerade med CVD, och deras tillämpningar som support för katalysatorer. Materialen karaktäriseras med en rad olika tekniker, allt från transmission-elektronmikroskopi till bränslecellstester. Olika kolnanostrukturer har syntetiserats med katalytisk CVD på palladium (Pd) nanopartiklar. Produktionen av flerväggiga kolnanorör, kolfibrer och heliska kolnanofibrer har tillverkats med acetylen som kolkälla och genom att variera temperaturen kunde innehållet av olika typer av nanostrukturerat kol kontrolleras. Särskilt stort intresse har de heliska kolnanofibrerna rönt på grund av deras unika struktur. Vi beskriver en tillväxtmekanism baserad på en anisotrop diffusionsmodell. Genom att justera produktionsparametrarna visar vi att heliska kolnanofibrer kunde tillverkas med nära 100 %-ig renhet och hög effektivitet. Den unika heliska och fiberlika strukturen är mycket intressant for tillämpningar som support för heterogena katalysatorer. Ett flertal kompositer för katalytiska tillämpningar har utvecklats baserade på heliska kolnanofibrer, dekorerade med heterogena katalysatorer genom en rad olika kemiska/fysikaliska tekniker. De syntetiserade materialen visar mycket goda katalytiska egenskaper för att oxidera metanol, etanol och myrsyra. Därigenom blir de mycket attraktiva för användning i bränsleceller. Vi korrelerar de goda katalytiska egenskaperna med en bra vidhäftning av nanopartiklarna på de heliska kolnanofibrerna defekter, deras goda ledningsförmåga, bra egenskaper för att förbereda elektroder, samt deras stora yta i förhållande till deras volym och vikt.
569

Engineering Exquisite Nanoscale Behavior with DNA

Gopalkrishnan, Nikhil January 2012 (has links)
<p>Self-assembly is a pervasive natural phenomenon that gives rise to complex structures and functions. It describes processes in which a disordered system of components form organized structures as a consequence of specific, local interactions among the components themselves, without any external direction. Biological self-assembled systems, evolved over billions of years, are more intricate, more energy efficient and more functional than anything researchers have currently achieved at the nanoscale. A challenge for human designed physical self-assembled systems is to catch up with mother nature. I argue through examples that DNA is an apt material to meet this challenge. This work presents:</p><p>1. 3D self-assembled DNA nanostructures.</p><p>2. Illustrations of the simplicity and power of toehold-mediated strand displacement interactions.</p><p>3. Algorithmic constructs in the tile assembly model.</p> / Dissertation
570

Wafer-scale processing of arrays of nanopore devices

Ahmadi, Amir 10 January 2013 (has links)
Nanopore-based single-molecule analysis of biomolecules such as DNA and proteins is a subject of strong scientific and technological interest. In recent years, solid state nanopores have been demonstrated to possess a number of advantages over biological (e.g., ion channel protein) pores due to the relative ease of tuning the pore dimensions, pore geometry, and surface chemistry. However, solid state fabrication methods have been limited in their scalability, automation, and reproducibility. In this work, a wafer-scale fabrication method is first demonstrated for reproducibly fabricating large arrays of solid-state nanopores. The method couples the high-resolution processes of electron beam lithography (EBL) and atomic layer deposition (ALD). Arrays of nanopores (825 per wafer) are successfully fabricated across a series of 4' wafers, with tunable pore sizes from 50 nm to sub-20 nm. The nanopores are fabricated in silicon nitride films with thicknesses varying from 10 nm to 50 nm. ALD of aluminum oxide is used to tune the nanopore size in the above range. By careful optimization of all the processing steps, a device survival rate of 96% is achieved on a wafer with 50 nm silicon nitride films on 60- 80 micron windows. Furthermore, a significant device survival rate of 88% was obtained for 20 nm silicon nitride films on order 100 micron windows. In order to develop a deeper understanding of nanopore fabrication-structure relationships, a modeling study was conducted to examine the physics of EBL, in particular: to investigate the effects of beam blur, dose, shot pattern, and secondary electrons on internal pore structure. Under the operating conditions used in pore production, the pores were expected to taper to a substantially smaller size than their apparent size in SEM. This finding was supported by preliminary conductance readings from nanopores.

Page generated in 0.0302 seconds