Theory, design, fabrication and characterization of on-chip optical beam steering systems are presented in this dissertation. Silicon photonics is being considered for integration with conventional CMOS technology for large-band width and low loss on and off-chip communications. We choose silicon nanomembrane, or silicon-on-insulator (SOI) substrates for implementation of large-angle and agile beam steeres. While working on the targeted device, we contributed to the theory, modeling, engineering and implementation of different building blocks. Multimode-interference couplers (MMIs) constitute important parts of this dissertation. These devices are commonly used as on-chip beam splitters, optical switches and on-chip static phase shifters. The MMIs’ principles of operation are suited in more details and design rules are derived for the first time. MMI based beam splitters with number of outputs as large as 12 are fabricated and tested on SOI wafers. Traditionally, MMIs devices were designed by means of computationally expensive numerical simulations. Numerically and experimentally, we show that our analytical design rules make design of MMIs with low insertion loss and highly uniform outputs possible without additional optimization processes. Optical phased arrays include phase shifter blocks. In the first prototype, we use micro-heaters for tuning the optical phase. The bread-loafing effect, which is generally considered an undeniable phenomenon in the silicon industry, is engineered to realize a mechanical structure to efficiently direct heat toward the silicon waveguides. We also investigate slow light photonic crystal based delay lines to be used as phase shifters. An important drawback of such devices is the low coupling efficiency between slow-light photonic crystal waveguides and fast light strip waveguides. We numerically and experimentally investigate the coupling efficiency, and show for the first time that a few-period long fast-light photonic crystal waveguide without any group index tapering suffices for efficient coupling. The prototype is fabricated, packaged and tested and optical beam steering angle over ±30degrees is demonstrated. Finally, preliminary investigations for 3D implementation of the beam steerer system are presented to clarify the approaches to take for future works. / text

abstract: Origami and Kirigami are two traditional art forms in the world. Origami, from ‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were successively utilized in making stretchable lithium ion batteries and three-dimensional (3D) silicon structure which both provide excellent mechanical characteristics. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2016

<p>Beta-gallium oxide (<i>β</i>-Ga₂O₃) is an emerging wide bandgap semiconductor for next generation power devices which offers the potential to replace GaN and SiC. It has an ultra-wide bandgap (UWBG) of 4.8 eV and a corresponding <i>E</i>_brof 8 MV/cm. <i>β</i>-Ga₂O₃also possesses a decent intrinsic electron mobility limit of 250 cm²/V<i>·</i>s, yielding high Baliga’s figure of merit of 3444. In addition, the large bandgap of <i>β</i>-Ga₂O₃gives stability in harsh environment operation at high temperatures. </p> <p>Although low-cost large-size <i>β</i>-Ga₂O₃native bulk substrates can be realized by melt growth methods, the unique property that (100) surface of <i>β</i>-Ga₂O₃has a large lattice constant of 12.23 Å allows it to be cleaved easily into thin and long nano-membranes. Therefore, <i>β</i>-Ga₂O₃FETs on foreign substrates by transferring can be fabricated and investigated before <i>β</i>-Ga₂O₃epitaxy technology becomes mature and economical viable. Moreover, integrating <i>β</i>-Ga₂O₃on high thermal conductivity materials has an advantage in terms of suppressing self-heating effects. </p><p>In this dissertation, structural and material innovations to overcome and improve critical challenges are summarized as follows: 1) Top-gate nano-membrane <i>β</i>-Ga₂O₃FETs on a high thermal conductivity diamond substrate with record high maximum drain current densities are demonstrated. The reduced self-heating effect due to high thermal conductivity of the substrate was verified by thermoreflectance measurement. 2) Local electro-thermal effect by electrical bias was applied to enhance the electrical performance of devices and improvements of electrical properties were shown after the annealing. 3) Thin thermal bridge materials such as HfO₂and ZrO₂were inserted between <i>β</i>-Ga₂O₃and a sapphire substrate to reduce self heating effects without using a diamond substrate. The improved thermal performance of the device was analyzed by phonon density of states plots of <i>β</i>-Ga₂O₃and the thin film materials. 4) Nano-membrane tri-gate <i>β</i>-Ga₂O₃FETs on SiO₂/Si substrate fabricated via exfoliation have been demonstrated for the first time. 5) Using the robustness of <i>β</i>-Ga₂O₃in harsh environments, <i>β</i>-Ga₂O₃ferroelectric FETs operating as synaptic devices up to 400 °C were demonstrated. The result offers the potential to use the novel device for ultra-wide bandgap logic applications, specifically neuromorphic computing exposed to harsh environments.<br></p>