The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly used method for generating and detecting terahertz waves is to excite a voltage-biased photoconductive antenna with an extremely short laser pulse. The pulsed laser generates charge carriers in a photoconductive substrate which are swept onto the metallic antenna traces to produce an electric current that radiates or detects a terahertz band signal. Therefore, analysis of a photoconductive antenna requires simultaneous solutions of both semiconductor physics equations (including drift-diffusion and continuity relations) and Maxwell’s equations. A multi-physics analysis scheme based on the Discontinuous-Galerkin Finite-Element Time-Domain (DGFETD) is presented that couples the semiconductor drift-diffusion equations with the electromagnetic Maxwell’s equations. A simple port model is discussed that efficiently couples the two equation sets. Various photoconductive antennas were fabricated using TiAu metallization on a GaAs substrate and the fabrication process is detailed. Computed emission intensities are compared with measured data. Optimized antenna designs based on the analysis are presented for a variety of antenna configurations.

Nanoparticles are often considered as efficient drug delivery vehicles for precisely dispensing the therapeutic payloads specifically to the diseased sites in the patient’s body, thereby minimizing the toxic side effects of the payloads on the healthy tissue. However, the fundamental physics that underlies the nanoparticles’ intrinsic interaction with the surrounding cells is inadequately elucidated. The ability of the nanoparticles to precisely control the release of its payloads externally (on-demand) without depending on the physiological conditions of the target sites has the potential to enable patient- and disease-specific nanomedicine, also known as Personalized NanoMedicine (PNM). In this dissertation, magneto-electric nanoparticles (MENs) were utilized for the first time to enable important functions, such as (i) field-controlled high-efficacy dissipation-free targeted drug delivery system and on-demand release at the sub-cellular level, (ii) non-invasive energy-efficient stimulation of deep brain tissue at body temperature, and (iii) a high-sensitivity contrasting agent to map the neuronal activity in the brain non-invasively. First, this dissertation specifically focuses on using MENs as energy-efficient and dissipation-free field-controlled nano-vehicle for targeted delivery and on-demand release of a anti-cancer Paclitaxel (Taxol) drug and a anti-HIV AZT 5’-triphosphate (AZTTP) drug from 30-nm MENs (CoFe2O4-BaTiO3) by applying low-energy DC and low-frequency (below 1000 Hz) AC fields to separate the functions of delivery and release, respectively. Second, this dissertation focuses on the use of MENs to non-invasively stimulate the deep brain neuronal activity via application of a low energy and low frequency external magnetic field to activate intrinsic electric dipoles at the cellular level through numerical simulations. Third, this dissertation describes the use of MENs to track the neuronal activities in the brain (non-invasively) using a magnetic resonance and a magnetic nanoparticle imaging by monitoring the changes in the magnetization of the MENs surrounding the neuronal tissue under different states. The potential therapeutic and diagnostic impact of this innovative and novel study is highly significant not only in HIV-AIDS, Cancer, Parkinson’s and Alzheimer’s disease but also in many CNS and other diseases, where the ability to remotely control targeted drug delivery/release, and diagnostics is the key.

The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible. Furthermore, all mode-locked lasers produce phase noise, which can be a limiting factor in the performance of optical communication systems, specifically at higher bit rates. In this thesis, we design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode to lower phase noise and reduce the drive power requirements of the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the impedance of the MLLD is necessary and was carried out. Then, a narrowband solution of two 0.1 pF chip capacitors in parallel is considered and examined as an impedance matching network for an operating frequency of 20 GHz. The hybrid silicon laser was packaged together in a module including the impedance- matching circuit for efficient RF injection. In conclusion, a 6 dB reduction of power required to drive the laser diode, as well as approximately a 10 dB phase noise improvement, was measured with the narrow-band solution. Also, looking ahead to possible future work, we discuss a step recovery diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique takes into account the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum pulse shaping.

As CMOS technology scaling is fast approaching its fundamental limits, several new nano-electronic devices have been proposed as possible alternatives to MOSFETs. Research on emerging devices mainly focusses on improving the intrinsic characteristics of these single devices keeping the overall integration approach fairly conventional. However, due to high logic complexity and wiring requirements, the overall system-level power, performance and area do not scale proportional to that of individual devices. Thereby, we propose a fundamental shift in mindset, to make the devices themselves more functional than simple switches. Our goal in this thesis is to develop a new nanoscale fabric paradigm that enables realization of arbitrary logic functions (with high fan-in/fan-out) more efficiently. We leverage on non-equilibrium spin wave physical phenomenon and wave interference to realize these elementary functions called Spin Wave Functions (SPWFs). In the proposed fabric, computation is based on the principle of wave superposition. Information is encoded both in the phase and amplitude of spin waves; thereby providing an opportunity for compressed data representation. Moreover, spin wave propagation does not involve any physical movement of charge particles. This provides a fundamental advantage over conventional charge based electronics and opens new horizons for novel nano-scale architectures. We show several variants of the SPWFs based on topology, signal weights, control inputs and wave frequencies. SPWF based designs of arithmetic circuits like adders and parallel counters are presented. Our efforts towards developing new architectures using SPWFs places strong emphasis on integrated fabric-circuit exploration methodology. With different topologies and circuit styles we have explored how capabilities at individual fabric components level can affect design and vice versa. Our estimates on benefits vs. 45nm CMOS implementation show that, for a 1-bit adder, up to 40x reduction in area and 228x reduction in power is possible. For the 2-bit adder, results show that up to 33x area reduction and 222x reduction in power may be possible. Building large scale SPWF-based systems, requires mechanisms for synchronization and data streaming. In this thesis, we present data streaming approaches based on Asynchronous SPWFs (A-SPWFs). As an example, a 32-bit Carry Completion Sensing Adder (CCSA) is shown based on the A-SPWF approach with preliminary power, performance and area evaluations.

Nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. These fabrics employ unconventional manufacturing techniques like Nano-imprint lithography or Super-lattice Nanowire Pattern Transfer to produce ultra-dense nano-structures. However, one key challenge that has received limited attention is the interfacing of unconventional/self-assembly based approaches with conventional CMOS manufacturing to build integrated systems. We propose a novel nanofabric approach that mixes unconventional nanomanufacturing with CMOS manufacturing flow and design rules to build a reliable nanowire-CMOS 3-D integrated fabric called N3ASICs with no new manufacturing constraints. In N3ASICs active devices are formed on a dense semiconductor nanowire array and standard area distributed pins/vias, metal interconnects route signals in 3D. The proposed N3ASICs fabric is fully described and thoroughly evaluated at all design levels. Novel nanowire based devices are envisioned and characterized based on 3D physics modeling. Overall N3ASICs fabric design, associated circuits, interconnection approach, and a layer-by-layer assembly sequence for the fabric are introduced. System level metrics such as power, performance, and density for a nanoprocessor design built using N3ASICs were evaluated and compared against a functionally equivalent CMOS design. We show that the N3ASICs version of the processor is 3X denser and 5X more power efficient for a comparable performance than the 16-nm scaled CMOS version without any new/unknown-manufacturing requirement. Systematic yield implications due to mask overlay misalignment have been evaluated. A partitioning approach to build complex circuits has been studied.

The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer torque or domain wall motion to switch magnetization. Current-induced switching invariably dissipates an exorbitant amount of energy in the switching circuit that nullifies any energy advantage that a magnet may have over a transistor. Magnetoelastic switching (switching the magnetization of a magnetostrictive magnet with voltage generated stress) is an unusual switching paradigm where the dissipation turns out to be merely few hundred kT per switching event – several orders of magnitude less than that encountered in current-based switching. A fundamental obstacle, though, is to deterministically switch the magnetization of a nanomagnet between two stable states that are mutually anti-parallel with stress alone. In this work, I have investigated ways to mitigate this problem. One popular approach to flip the magnetizations of a nanomagnet is to pass a spin polarized current through it that transfers spin angular moment from the current to the electrons in the magnet, thereby switching their spins and ultimately the magnet’s magnetization. This approach – known as spin transfer torque (STT) – is very dissipative because of the enormous current densities needed to switch magnets, We, therefore, devised a mixed mode technique to switch magnetization with a combination of STT and stress to gain both energy efficiency from stress and deterministic 180o switching from STT. This approach reduces the total energy dissipation by roughly one order of magnitude. We then extended this idea to find a way to deterministically flip magnetization with stress alone. Sequentially applying stresses along two skewed axes, a complete 180o switching can be achieved. These results have been verified with stochastic Landau-Lifshitz-Gilbert simulation in the presence of thermal noise. The 180o switching makes it possible to develop a genre of magneto-elastic memory where bits are written entirely with voltage generated stress with no current flow. They are extremely energy-efficient. In addition to memory devices, a universal NAND logic device has been proposed which satisfies all the essential characteristics of a Boolean logic gate. It is non-volatile unlike transistor based logic gates in the sense that that gate can process binary inputs and store the output (result) in the magnetization states of magnets, thereby doubling as both logic and memory. Such dual role elements can spawn non-traditional non-von-Neumann architectures without the processor and memory partition that reduces energy efficiency and introduces additional errors. A bit comparator is also designed, which happens to be all straintronic, yet reconfigurable. Moreover, a straintronic spin neuron is designed for neural computing architecture that dissipates orders of magnitude less energy than its CMOS based counterparts. Finally, an experiment has been performed to demonstrate a complete 180o switching of magnetization in a shape anisotropic magnetostrictive Co nanomagnet using voltage generated stress. The device is synthesized with nano-fabrication techniques namely electron beam lithography, electron beam evaporation, and lift off. The experimental results vindicate our proposal of applying sequential stress along two skewed axes to reverse magnetization with stress and therefore, provide a firm footing to magneto-elastic memory technology.

Ge1-xSnx alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge1-xSnx thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in lattice constants. Moreover, little is known about the chemical factors that govern the growth of Ge1-xSnx nanoalloys and the effects of quantum confinement on structure and optical properties. A synthesis has been developed to produce phase pure Ge1-xSnx nanoalloys which provides control over both size and composition. Three sets of Ge1-xSnx nanocrystals have been studied, 15–23 nm, 3.4–4.6 nm and 1.5–2.5 nm with Sn compositions from x = 0.000–0.279. Synthetic parameters were explored to control the nucleation and growth as well as the factors that have led to the elimination of undesired metallic impurities. The structural analysis of all nanocrystals suggests the diamond cubic structure typically reported for Ge1-xSnx thin films and nanocrystalline alloys. As-synthesized Ge1-xSnx nanoalloys exhibit high thermal stability and moderate resistance against sintering up to 400–500 °C and are devoid of crystalline and amorphous elemental Sn impurities.

Solar energy as the most abundant source of energy is clean, non-pollutant, and completely renewable, which provides energy security, independence, and reliability. Organic-inorganic hybrid perovskite solar cells (PSCs) revolutionized the photovoltaics field not only by showing high efficiency of above 22% in just a few years but also by providing cheap and facile fabrication methods. In this dissertation, fabrication of PSCs in both ambient air conditions and environmentally controlled N2-filled glove-box are studied. Several characterization methods such as SEM, XRD, EDS, Profilometry, four-point probe measurement, EQE, and current-voltage measurements were employed to examine the quality of thin films and the performance of the PSCs. A few issues with the use of equipment for the fabrication of thin films are addressed, and the solutions are provided. It is suggested to fabricate PSCs in ambient air conditions entirely, to reduce the production cost. So, in this part, the preparation of the solutions, the fabrication of thin films, and the storage of materials were performed in ambient air conditions regardless of their humidity sensitivity. Thus, for the first part, the fabrication of PSCs in ambient air conditions with relative humidity above ~36% with and without moisture sensitive material, i.e., Li-TFSI are provided. Perovskite materials including MAPbI3 and mixed cation MAyFA(1-y)PbIxBr(1-x) compositions are investigated. Many solution-process parameters such as the spin-coating speed for deposition of the hole transporting layer (HTL), preparation of the HTL solution, impact of air and light on the HTL conductivity, and the effect of repetitive measurement of PSCs are investigated. The results show that the higher spin speed of PbI2 is critical for high-quality PbI2 film formation. The author also found that exposure of samples to air and light are both crucial for fabrication of solar cells with larger current density and better fill factor. The aging characteristics of the PSCs in air and vacuum environments are also investigated. Each performance parameter of air-stored samples shows a drastic change compared with that of the vacuum-stored samples, and both moisture and oxygen in air are found to influence the PSCs performances. These results are essential towards the fabrication of low-cost, high-efficiency PSCs in ambient air conditions. In the second part, the research is focused on the fabrication of high-efficiency PSCs using the glove-box. Both single-step and two-step spin-coating methods with perovskite precursors such as MAyFA(1-y)PbIxBr(1-x) and Cesium-doped mixed cation perovskite with a final formula of Cs0.07MA0.1581FA0.7719Pb1I2.49Br0.51 were considered. The effect of several materials and process parameters on the performance of PSCs are investigated. A new solution which consists of titanium dioxide (TiO2), hydrochloric acid (HCl), and anhydrous ethanol is introduced and optimized for fabrication of quick, pinhole-free, and efficient hole-blocking layer using the spin-coating method. Highly reproducible PSCs with an average power conversion efficiency (PCE) of 15.4% are fabricated using this solution by spin-coating method compared to the conventional solution utilizing both spin-coating with an average PCE of 10.6% and spray pyrolysis with an average PCE of 13.78%. Moreover, a thin layer of silver is introduced as an interlayer between the HTL and the back contact. Interestingly, it improved the current density and, finally the PCEs of devices by improving the adhesion of the back electrode onto the organic HTL and increasing the light reflection in the PSC. Finally, a highly reproducible fabrication procedure for cesium-doped PSCs using the anti-solvent method with an average PCE of 16.5%, and a maximum PCE of ~17.5% is provided.

Electron Beam Induced Deposition (EBID) is a direct write fabrication process with applications in circuit edit and debug, mask repair, and rapid prototyping. However, it suffers from significant drawbacks, most notably low purity. Work over the last several years has demonstrated that deposition from bulk liquid precursors, rather than organometallic gaseous precursors, results in high purity deposits of low resistivity (LPEBID). In this work, it is shown that the deposits resulting from LP-EBID are only highly conductive when deposited at line doses below 25μC/cm. When the dose exceeds this value, the resulting structure is highly porous providing a poor conductive pathway. It is also shown that beam current has no significant effect on the resistivity of the deposits. Nanowires with resistivity significantly lower than the previous best result of 67μΩ•cm were achieved, with the lowest resistivity being only 6.6μΩ•cm, only a factor of 4 higher than that bulk copper of 1.7μΩ•cm.