The study on refractive index modification of transparent materials with ultrashort laser pulses is presented in this work. Based on experimental data it was demonstrated, that using ultrashort pulses, generated with Yb:KGW laser system, it is possible to produce modified refractive index zones in the fused silica glass, that possess birefringence. This effect is caused by nanogratings that form in the bulk of the material. Homogeneity of the modified zones is determined by the accumulation effects, mainly the number of pulses that affect each area. Refractive index variations can be created also in crystalline material such as lithium niobate. Depending on the writing pulse parameters different types of modifications can be created: permanent modification that is caused by crystal amorphization and non-stable modifications that originate from the photorefractive properties of the crystal. Latter modifications can be used for three-dimensional, rewritable data recording. Highly efficient photonic elements, such as volume Bragg gratings, recorded in fused silica and lithium niobate crystal are demonstrated. The technique, allowing the evaluation of refractive index change applying Bragg gratings, is described. Also modification influence on nonlinear processes that appear in fused silica such as filament formation and supercontinuum generation is experimentally investigated. / Darbe pristatomi eksperimentiniai bei teoriniai rezultatai, susiję su skaidriųjų terpių lūžio rodiklio pokyčio indukavimu. Parodoma, kad lydytą kvarcą veikiant Yb:KGV lazerine sistema generuojamais impulsais, jame galima sukurti modifikuoto lūžio rodiklio sritis. Šios sritys pasižymi dvejopu šviesos lūžimu, atsirandančiu dėl medžiagos tūryje besiformuojančių nanogardelių, o modifikuotų sričių vienalytiškumas priklauso nuo akumuliacinių efektų. Pakitusio lūžio rodiklio sritis taip pat galima formuoti ir ličio niobato kristale. Priklausomai nuo spinduliuotės parametrų, šiame kristale galima įrašyti stabilius modifikuoto lūžio rodiklio darinius, o taip pat ir nestabilias modifikacijas, atsirandančias dėl fotorefrakcinio reiškinio. Pastarąjį efektą galima panaudoti daugkartiniam informacijos įrašymui. Pademonstruoti efektyvūs fotoniniai elementai, tūrinės Brego gardelės, įrašytos tiek lydyto kvarco, tiek ličio niobato kristalo tūryje. Pateikiama metodika, skirta lazerio indukuoto lūžio rodiklio pokyčiui nustatyti matuojant Brego gardelių difrakcinius efektyvumus. Taip pat tyrinėjama kaip modifikuoti dariniai lemia superkontinuumo ir šviesos gijos formavimosi reiškinius lydytame kvarce.

A novel photonic frequency discriminator has been developed. The discriminator utilizes a Mach Zehnder interferometer-assisted ring resonator to achieve enhanced linearity. A numerical frequency-domain two-tone test is performed to evaluate the unique design of the discriminator, particularly for suppression of the third order intermodulation distortion. The discriminator is switchable between linear-intensity and linear-field regimes by adjusting a phase delay on one arm of the Mach Zehnder interferometer. Through the simulation, the linear<intensity discriminator is shown to be advantageous. The discriminator is an optical ring resonator-Mach Zehnder interferometer synthesized passive filter. The ring resonator is made of Arsenic trisulfide (As2S3) and the bus waveguide is a Titanium<diffused Lithium niobate (LiNbO3) waveguide. This As2S3 ring-on-Ti:LiNbO3 hybrid structure offers electro-optic tunability of the device owing to a strong electro-optic effect of the substrate material. A large optical confinement factor achieved by vertical integration of the As2S3 strip waveguide on a LiNbO3 substrate enables a low loss ring resonator. The Mach Zehnder interferometer is formed by the optical path length difference of the birefringent LiNbO3 substrate instead of a physical Y-branch structure, which makes the fabrication tolerances relaxed. In order for this highly birefringent device to be characterized, each polarization mode must be measured separately. A novel algorithm which can measure the wavelength-swept Jones matrix including its phase response is devised. The efficacy of the algorithm is demonstrated by characterizing a ring resonator. Finally, the fabricated discriminator is fully characterized using the algorithm.

A new technique for optical pattern recognition with two-center recording of persistent holograms in doubly doped LiNbO₃3:Fe:Mn crystal is presented, by which the holograms are localized in separate slices along the recording medium. The localized recording method has the distinctive advantage of selective recording and erasure of the individual holograms without affecting the entire holographic recording medium. This capability enables dynamic content modification of the optical pattern recognition systems. Also, the diffraction efficiency of localized holograms is much larger than that of the normal volume multiplexed holograms. It is theoretically shown that the localized holographic correlator (LHC) outperforms the conventional volume holographic correlators in terms of crosstalk, shift invariance, and capacity. The LHC is experimentally demonstrated. Several persistent holograms are localized within separate slices as close as 33 μm apart along the crystal. The excessive diffraction efficiency of the localized holograms is employed to enhance the LHC robustness through multiplexing several holograms per pattern within individual slices of the recording medium. A holographic data storage system based on two-center holographic recording in a doubly doped LiNbO3:Fe:Mn crystal is developed with angular multiplexing capability. The associated imaging system has been optimized for the pixel matching of pixelated bit patterns generated by a spatial light modulator (SLM) through the recording medium onto a camera. The initial multiplexed holograms show promising contrast of dark and bright pixels. With the optimized imaging system of the developed holographic memory, the implementation of a dynamic read/write data storage system with localized recording is envisioned. The large diffraction efficiency of the localized holograms enables multilevel (M-ary) data coding to improve the storage density of the system.

In recent years bismuth-based, layer-structured perovskites such as SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT) have been investigated extensively, because of their potential use in ferroelectric random access memories (FeRAMs). In comparison with non-layered perovskite ferroelectrics such as Pb(Zr,Ti)O3 (PZT), these offer several advantages such as fatigue free, lead free, low operating voltages and most importantly their ferroelectric properties are independent of film thickness in the 90 to 500 nm range. For FeRAM device applications, large remnant polarization (Pr), low coercive field (Ec) accompanied by high Curie temperature (Tc) are required for better performance and reliable operation. Much effort has been made to improve the ferroelectric properties of SBN and SBT ceramics by doping on A or B sites. It was known in the literature that partial substitution of Sr2+ by Bi3+ ions in SBN and SBT would increase the Curie temperature and improve the dielectric properties. The focus of the investigations that were taken up was to improve the electrical, dielectric and ferroelectric characteristics of SrBi2Nb2O9 ceramics. It was reported that the ferroelectric and nonlinear optical properties of LiNbO3 and LiTaO3 could be improved when vanadium, the lightest element in group V of the periodic table is substituted for Nb or Ta along with Li and three oxygens. It is with this background the investigations have been taken up to see whether one can extend the same argument to the Aurivillius family of oxides. Therefore, the central theme of the present investigations aimed at substituting Nb5+ by a smaller cation V5+ in SBN and study its influence on the formation temperature, sinterability, structural and microstructural characteristics apart from its physical properties. Recently the optical properties of this material have been recognized to be important from the optical device point of view. Unfortunately single crystal growth of vanadium doped SBN was hampered because of the bismuth and vanadium loss (high volatility) observed in the process of growth. One of the routes that attracted our attention has been the glass-ceramic. It would be interesting to visualize the behavior of crystallites of nano/micrometer size embedded in a glass matrix as these crystals were known to give rise to exotic properties. One of the crucial steps in the process of fabrication of a glass nanocrystalcomposite system in which crystalline phases have symmetries that would eventually give rise to basic non - centrosymmetric properties such as piezoelectric, pyroelectric and Pockels effects, has been to choose a compatible matrix material associated with easy glass forming capability and the ability to evenly disperse dipolar defects within itself. Recent investigations into strontium borate SrB4O7 (SBO), lithium borate Li2B4O7 (LBO) glasses indicated that LBO by virtue of its favorable structure, thermal and optical properties would form a suitable host glass matrix for dispersing layer structured ferroelectric oxides belonging to the Aurivillius family of oxides. Since lithium borate has wide transmission window, it was worth making an attempt to fabricate optical composite of Li2B4O7 (LBO) and vanadium doped SrBi2Nb2O9 (SBVN) and to study its structural, dielectric, pyroelectric, ferroelectric and optical properties. Therefore the present thesis reports detailed investigations into the effect of vanadium doping on the structural and various physical properties of an n = 2 member of the Aurivillius family of oxides in the polycrystalline form and novel glass composites comprising nano/microcrystallites of this phase. Chapter 1 comprises a brief introduction to the dielectric, pyroelectric, ferroelectric and nonlinear optical properties of materials. In addition to the principles and phenomena, the material aspects of these important branches of physics are discussed. It also forms a preamble to the glasses, criteria for glass formation, glass – ceramics and subsequently ferroelectric and nonlinear optical effects that were observed in glasses and glass - ceramics. Chapter 2 describes the material fabrication techniques adopted to prepare polycrystalline and grain – oriented ceramics, glasses and glass nanocrystalcomposites. The details of various structural, dielectric, pyroelectric, ferroelectric and optical measurement techniques employed to characterize these materials are also included. Chapter 3 discloses the fabrication of strontium bismuth niobate ceramics and their characterization for dielectric and impedance properties. The dielectric properties of strontium bismuth niobate ceramics have been modeled based on Jonscher’s Universal formalism. The coefficients of the Jonscher’s expression, exponent n(T) undergoes a minimum and A(T) exhibits a peak at the Curie temperature, Tc (723K). A strong low frequency dielectric dispersion (LFDD) associated with an impedance relaxation has been found to exist in these ceramics in the temperature range 573 - 823K. The Z′′ of the AC complex impedance showed two distinct slopes in the frequency range 100Hz-1MHz suggesting the existence of two dispersion mechanisms. The exponents m and n were obtained from the curve fitting. The exponent n was found to exhibit a minimum at the Curie temperature, Tc (723K) whereas the m was temperature independent. Chapter 4 deals with the fabrication of vanadium doped SrBi2Nb2O9 ceramics and their characterization for microstructural, dielectric, pyroelectric and ferroelectric properties. The average grain size of the SrBi2Nb2O9 (SBN) ceramic containing V2O5 was found to increase with increase in V2O5 content. The dielectric constant (εr) as well as the dielectric loss (D) increased with increase in grain size (6µm-17µm). The pyroelectric coefficient was found to be positive at 300K and showed an increasing trend with increasing grain size. Interestingly, the SrBi2(Nb0.7V0.3)2O9-δ ceramics consisting of 17µm sized grains showed higher remnant polarization (Pr) and lower coercive field (Ec) than those with grains of 7µm. Chapter 5 deals with the dielectric properties which were studied in detail in the 100Hz to 1MHz frequency range at various temperatures (300 – 823 K) for undoped and vanadium (10 mol%) doped SrBi2Nb2O9 (SBVN10) ferroelectric ceramics. A strong low frequency dielectric dispersion was encountered in these ceramics in the 573 – 823 K temperature range. The dielectric constants measured in the wide frequency and temperature ranges for both the samples were found to fit well to the Jonscher’s dielectric dispersion relations. The dielectric behavior of SBN and SBVN10 ceramics was rationalized using the impedance and modulus data. The electrical conductivity studies of layered SrBi2(Nb1-xVx)2O9-δ ceramics with x lying in the range 0 to 0.3 (30 mol%) were centered in the 573 – 823K temperature range as the Curie temperature lies in this range. The concentration of mobile charge carriers (n), the diffusion constant (D0) and the mean free path (a) were calculated using Rice and Roth formalism. The conductivity parameters such as ion hopping rate (ωp) and the charge carrier concentration (K′) term have been calculated using Almond and West formalism. The afore mentioned microscopic parameters were found to be V2O5 content dependent in SrBi2(Nb1-xVx)2O9-δceramics. Chapter 6 describes the fabrication of partially grain – oriented SrBi2(Nb1-xVx)2O9-δ (0 ≤x≤3.0 in molar ratio) ceramics and characterization for their structural, microstructural, dielectric, pyroelectric and ferroelectric properties. The grain – orientation factor and the microstructural features were studied by XRD and scanning electron microscopy as a fuction of sintering temperature and V2O5 content. The dielectric constant measured along the direction parallel and perpendicular to the pressing axis has shown a significant anisotropy. The pyroelectric and ferroelectric properties were superior in the direction perpendicular to the pressing axis (polar) to that in the parallel direction. The fabrication and characterization details of (100 – x) (Li2B4O7) – x (SrO - Bi2O3 - 0.7 Nb2O5 – 0.3 V2O5) (10 ≤ x ≤ 60, in molar ratio) glasses and glass nanocrystal composites are dealt within Chapter 7. The nanocrystallization of strontium bismuth niobate doped with vanadium (SrBi2(Nb0.7V0.3)2O9-δ(SBVN)) has been demonstrated in Li2B4O7 glasses. The glassy nature of the as – quenched samples was established by differential thermal analyses (DTA). The amorphous nature of the as – quenched glasses and crystallinity of glass nanocrystal composites were confirmed by X – ray powder diffraction studies. High resolution transmission electron microscopy (HRTEM) of the glass nanocrystal composites (heat – treated at 783K/6h) confirm the presence of nano rods of SBVN embedded in Li2B4O7 glass matrix. Chapter 8 presents the physical properties of the glasses and glass nanocrystal composites. Dielectric constant of both the as – quenched and glass nanocrystal composites was found to increase with increase in the composition, whereas the loss was observed to decrease with increasing SBVN composition. Different dielectric mixture formulae were employed to analyze the dielectric properties of the glass nanocrystal composite. The electrical behaviour of the glasses and glass nanocrystal composites was rationalized using impedance spectroscopy. The observed pyroelectric response and ferroelectric hysteresis of these composites confirmed the polar nature. Various optical parameters such as optical band gap (Eopt), Urbach energy (∆E), refractive index (n), optical dielectric constant (ε′∞) and ratio of carrier concentration to the effective mass (N/m*) were determined. The effects of composition of the glasses and glass nanocrystal composites on these parameters were studied. Transparent glasses embedded with nanocrystallites of SBVN exhibited intense second harmonic signals in transmission mode when exposed to IR laser light at λ = 1064 nm. The thesis ends with a summary of the important findings and conclusions.

The following investigations have been carried out in this thesis 1)Cordierite is already well known for its low thermal expansion behaviour. Chemical substitutions at various octahedral and tetrahedral sites have been done and their thermal expansion characteristics have been studied Synthesis of cordierite in more reactive environment provided by AlF3 used as sintering aid has been attempted 2) Diffuse ferroelectric phase transition of lead based perovskite materials leads to low expansion region. Solid solutions of lead iron niobate with lead titanate is investigated to increase the structural distortion and see it this low expansion region can be extended to wider temperature Preparation of materials with higher tetragonal distortion In PbTi03- BlFeO3 system is undertaken to study the thermal expansion anisotropy. 3) Composites between lead iron niobate(+(x) and lead titanate (-(x below Tc) has been undertaken to prepare low expansion hulk over a wide temperature range 4) Acoustic emission has been employed as a tool to detect the microcracking in solid solutions between PFN1-x, PTx, and PT1-x, ,BFx, It is hoped to understand relation between magnitude of lattice distortion transition temperature and microcracking in ceramics of the class of materials.

Title: Studies of Relaxor Ferroelectrics with Spontaneous Polar Nanoregions Author: Petr Ondrejkovič Institute: Institute of Physics of the Czech Academy of Sciences Supervisor: Ing. Jiří Hlinka, Ph.D., Institute of Physics of the Czech Academy of Sciences Abstract: The thesis is devoted to relaxor ferroelectrics with spontaneous polar nanoregions. We have investigated one of the canonical representatives, uniaxial strontium barium niobate, by means of neutron scattering, and also performed computer simulations with a model of a uniaxial ferroelectric with point defects. Neutron scattering studies of strontium barium niobate single crystals under a defined sequence of thermal and electric field treatments elucidate nature of distinct components of its transverse diffuse scattering. These components are associated mainly with the static ferroelectric nanodomain structure and the dynamic order-parameter (polarization) fluctuations. Moreover, high-resolution neutron backscattering experiments allowed us to resolve characteristic frequencies of the order-parameter fluctuations and prove that this component is caused by the same polar fluctuations that are responsible for the Vogel-Fulcher dielectric relaxation, the hallmark of relaxor ferroelectrics. The model system of a uniaxial ferroelectric with point...

<div>Some of the biggest challenges with analog signal processing at radio frequencies (RF) are: RF loss at the frequency of interest, large enough fractional bandwidth, and sufficient delay. It is difficult to achieve enough delay in radio front ends using a purely electromagnetic approach since it is limited to a fraction of the speed of light. A solution has been the use of acoustic RF devices, such as surface acoustic wave (SAW) delaylines and MEMS filters. For some acoustic RF devices, like high performance Transmit and Receive SAW correlators, the long delays introduce significant propagation losses. These propagation losses can be compensated within the device by integrating a low noise amplifier into the acoustic correlator architecture. This can be accomplished by designing the SAW correlator on a high performance acoustoelectric (AE) platform. The AE effect is a phenomenon where nearby free carriers can interact with a travelling acoustic wave. Free carriers in close proximity to a piezoelectric material can interact with a travelling acoustic wave through its periodic potential. When a drift field is applied, depending on the relative velocity difference between the free carriers and acoustic wave, energy can either be transferred into (amplification) or out of (attenuation) the acoustic wave. </div><div><br></div><div>This thesis investigates the design and feasibility of AE MEMS devices on several Lithium Niobate (LN) platforms. First, the key acoustic and free carrier parameters are discussed and optimized for an ideal high performance AE material stack. In order to debug and analyze the performance of intermediate steps in the process of making high performance AE MEMS devices, three LN-based platforms are used throughout this work. These platforms help further examine some of the key challenges associated with making a high performance AE platform, like wafer bonding, fabrication, device design, and device operating conditions. These material stacks consist of: thin film LN bonded to a silicon wafer (LNOSi), thin film LN bonded to a silicon on insulator wafer (LNOSOI), and epitaxial indium gallium arsenide bonded to a LN wafer (InGaAs-LN).</div><div><br></div><div>The acoustic and piezoelectric performance of SAW devices on the LNOSi and LNOSOI platforms are modeled using COMSOL Multiphysics. A full study is performed to determine the piezoelectric coupling coefficient variation vs. device wavelength, propagation angle, transducer metal, and acoustic mode. A lumped element cross-field Mason model is modified to include substrate conductivity and simulated in Advanced Design System (ADS) software. SAW delaylines are then fabricated with both aluminum (Al) and gold (Au) Interdigital Transducers (IDT) and measured to compare to the simulated results. The analytical AE theory is then presented and calculations are performed to determine the desired (optimum) carrier concentration for AE devices. In addition to the 1D analytical AE model, initial work is done on developing a generalized 2D Finite Element Analysis (FEA) AE modeling scheme in COMSOL. The results for a piezoelectric semiconductor bulk acoustic wave (BAW) resonator and SAW delayline amplifier are presented. </div><div><br></div><div>On the LNOSi platform, gate controlled passive AE delaylines are fabricated and measured to examine the effects of LN bonding on Silicon free carrier concentrations and interface charges. Then, the fabrication and initial measurement results for doped Silicon AE delayline amplifiers are outlined. Based on the device design, the non-reciprocal nature of the AE effect can be used for more than just amplification and loss compensation. Using the InGaAs-LN platform, several classes of AE devices are designed and tested in pulsed mode operation. First, a series of segmented AE delayline amplifiers are measured to look at how the relative AE gain performance and input DC power scale with acoustic frequency, segment unit length, and number of segments. By taking advantage of the non-reciprocal shift in acoustic velocity, a dual-voltage AE delayline phase shifter is designed and tested. Routing of the acoustic waves between parallel delaylines can be accomplished through multistrip couplers (MSC) and can increase the library of possible AE device designs. The simplest example is a 3-port AE switch, which is designed and tested. The demonstration of these AE MEMS devices opens the door to a larger library of non-reciprocal acoustic devices utilizing the AE effect in high performance integrated material platforms.</div>

A major limitation of acousto-optic (AO) leaky-mode modulator based holographic displays is their inability to present full-parallax. We propose that full-parallax capabilities can be bestowed on these displays by integrating an electro-optic (EO) phased array into the architecture. We validated this concept by rendering computational models and by fabricating and testing a basic two-axis AO/EO deflector prototype in lithium niobate. This was, to our knowledge, the first instantiation of an integrated, hybrid AO/EO deflector. The prototype had a 6° deflection range along the AO-axis, and a 3° deflection range along the EO-axis. A series of models provide us with a clear path forward for optimizing this deflector. They suggest that an AO/EO modulator with an EO deflection range of 24.5° and that requires less than 7.5 V can be fabricated within the limitations of standard photolithography.

<p>Rare-earth ions (REIs) in solids are attractive optical centers due to their stable optical transitions and long lifetimes. Miniaturizing solid-state devices incorporated with REIs as quantum centers can play a key role in the implementation of future multiplexed quantum optical networks. Among the solid-state host materials for REIs, the Dissertation specifically studies silicon nitride (SiN) and crystalline lithium niobate (LN) materials. </p> <p><br></p> <p>SiN and Si are a CMOS-compatible material, and leveraging the well-developed technologies from the microelectronics industry is important for practical purposes because the cost of fabrication can be significantly reduced. Also, a recent study showed that the inhomogeneous broadening of Er-doped crystalline Si can be as low as 1GHz. Moreover, low-loss waveguide and high Q resonators were reported, making it a promising host for strong light-atom interactions. </p> <p><br></p> <p>On the other hand, LN is a promising host material for REIs due to its unique piezoelectric, electro-optic, nonlinear, and acousto-optic properties. Until recently, direct etching of LN has not been realized. But recently developed lithium niobate on insulator (LNOI) platform and direct LN etching techniques made it possible to fabricate low loss and strong confinement waveguides. Furthermore, LN has been used for quantum light storage and on-chip photon generation and wavelength conversion. Motivated by these recent advances and the interesting properties of LN, the Dissertation investigates thin-film crystalline LN. </p> <p><br></p> <p>In this dissertation, the methods and processes of fabricating long waveguides and ring resonators in 1)silicon nitride and 2)lithium niobate are introduced and the study of optical characterizations of Yb3+ ions in two different solid-state host materials are presented, specifically including photoluminescence (PL) spectroscopy, lifetime measurement, absorption and other characterization of light-atom interactions. </p> <p><br></p> <p>Furthermore, a study of Tm3+ ion arrays in thin-film LN is presented, specifically including the PL lifetime comparison between the periodically ordered sample and the randomly ordered sample and the scattering/reflection measurement from periodic ion arrays, both indicating the early evidence of cooperative effects of arrays in solids. Also, the theory of collective emission from atomic arrays is presented. Finally, I propose future plans to improve the fabrication process in these materials and possible future research directions based on the Dissertation.</p>

Refractive index measurements of the Strontium-Barium-Niobate (SBN) crystals show that none of the known second-harmonic-generation scheme (SHG) can be hold responsible for the SHG in SBN. Based on observations of the SHG experiments carried out with several compositions of the crystals in different setup-geometries a new model of second harmonic generaion was developed. The new SHG model, domain-induced second-harmonic generation (DISHG), which considers that the needle-like domain structure of this material plays an active role in the quasi phase matching of the produced second harmonic light has been experimentally proved using two different experiments. The new SHG process in the SBN crystals is a potential light source of cylindrically polarized light. The easy way of obtaining cylindrically polarized light with the SBN crystal broadens the potential applications for this material. The (DISHG) allows to investigate several properties of the ferroelectric domains. Using SHG measurements it was possible to analyze the development of the domain densities for domains of different sizes during the poling of the crystal. SHG measurements allow us to determine the minimum length of the ferroelectric domains. It was shown that this does not depend on the [Sr]/[Ba] ratio and domains are not getting longer after the sample was poled, except for the case of doped SBN. The ferroelectric-paraelectric phase transition has also been investigated. From the inflection point of the nonlinear susceptibility as function of the temperature the phase transition temperature was determined. The non fully-linear dependence of the phase transition temperature as function of the [Sr]/[Ba] ratio can be explained by a system of three different sublattices at the crystallographic positions of Strontium and Barium atoms.