Submitted by Edisangela Bastos (edisangela@ufpa.br) on 2015-05-20T17:45:25Z No. of bitstreams: 2 license_rdf: 22974 bytes, checksum: 99c771d9f0b9c46790009b9874d49253 (MD5) Dissertacao_ProjetoAntenasMultibandas.pdf: 8292008 bytes, checksum: daa9d9fac585b9b8c99a45f291237823 (MD5) / Approved for entry into archive by Ana Rosa Silva (arosa@ufpa.br) on 2015-05-21T15:50:32Z (GMT) No. of bitstreams: 2 license_rdf: 22974 bytes, checksum: 99c771d9f0b9c46790009b9874d49253 (MD5) Dissertacao_ProjetoAntenasMultibandas.pdf: 8292008 bytes, checksum: daa9d9fac585b9b8c99a45f291237823 (MD5) / Made available in DSpace on 2015-05-21T15:50:32Z (GMT). No. of bitstreams: 2 license_rdf: 22974 bytes, checksum: 99c771d9f0b9c46790009b9874d49253 (MD5) Dissertacao_ProjetoAntenasMultibandas.pdf: 8292008 bytes, checksum: daa9d9fac585b9b8c99a45f291237823 (MD5) Previous issue date: 2014 / O presente trabalho apresenta um projeto e análise de uma antena monopolo planar multibanda operante nas frequências de 2000 MHz, 2500 MHz e 3500 MHz para aplicação em dispositivos móveis 3G e 4G. Dentre essas faixas estão contidos os espectros 3G (1895- 2165 MHz), 4G (2500-2690 MHz) e 4G (3400-3600 MHz) utilizadas pelo LTE e WIMAX 3,5. Para o desenvolvimento desse estudo foi tomado como referência uma antena dual-band de Hua- Ming Chen projetada para operar em sistemas ISM 1800 MHz, redes Wireless e Bluetooth 2400 MHz. O projeto proposto neste trabalho é uma modificação na estrutura da antena dual-band adaptada para tripla ressonância simultânea em frequências utilizadas em redes móveis 4G. Para alcançar o objetivo proposto utilizou-se para simulação o software CST® MICROWAVE STUDIO baseado no método Integração Finita no Domínio, as simulações foram feitas no domínio do tempo. Após obtenção satisfatória dos resultados simulados, um protótipo da antena foi confeccionado para medição e teste, os resultados apresentados são coerentes aos obtidos na simulação, o que valida o método proposto. / This paper presents a design and analysis of a planar monopole antenna operating in multiband frequencies of 2000 MHz, 2500 MHz and 3500 MHz for use in 3G and 4G mobile devices. Among these bands are contained 3G (1895-2165 MHz), 4G (2500-2690 MHz) and 4G (3400-3600 MHz) spectra used by LTE and WIMAX 3.5. For the development of this study was taken as reference Hua-Ming Chen’s dual-band antenna designed to operate at ISM systems (1800 MHz), wireless networks and Bluetooth (2400 MHz). The project proposed in this work is a modification in the structure of the dual-band antenna adapted for simultaneous triple resonance frequencies used in 4G mobile networks. To achieve the proposed objective was used to simulate the CST® MICROWAVE STUDIO software based on the Finite Integration method in Domain; the simulations were done in the time domain. After obtaining satisfactory simulated results, a prototype antenna was built to test and measurement; the presented results are consistent with those obtained in the simulation, which validates the proposed method.

Neste trabalho, foram desenvolvidas antenas planares de micro-ondas multibandas para aplicação em terminais móveis de sistemas de comunicação sem fio. Foi realizado um estudo sobre antenas planares de micro-ondas, com ênfase em técnicas de projeto que possibilitam a operação das mesmas em bandas largas e em múltiplas bandas. A partir dos conhecimentos adquiridos com esse estudo, foram propostas configurações de antenas para terminais móveis de sistemas atuais de telefonia móvel, de WLAN e de WPAN, sistemas esses que têm experimentado nos últimos anos uma grande popularização mundial. Por meio de um procedimento de projeto auxiliado por simulação eletromagnética computacional, as configurações propostas de antenas foram analisadas e otimizadas, visando atender às especificações de projeto estabelecidas para operação nos sistemas mencionados. O desempenho que pode ser obtido com essas configurações de antenas depende de diversos parâmetros geométricos das mesmas, resultando em flexibilidade de projeto para obtenção das bandas de operação desejadas. Protótipos das antenas projetadas foram construídos e caracterizados para validar as configurações propostas de antenas e o procedimento de projeto empregado. Foram desenvolvidas quatro antenas para operação em sistemas de telefonia móvel, de WLAN e de WPAN empregados no Brasil, na Europa e nos EUA: uma antena planar em F-invertido tri-band com configuração original para operação nas bandas dos padrões GSM, DCS e PCS; uma antena planar em F-invertido penta-band com configuração original para operação nas bandas dos padrões GSM, DCS, PCS e UMTS e na banda ISM de 2.400 MHz; duas antenas quad-band, uma delas planar em F-invertido e a outra monopolo impresso com configuração original, para operação nas bandas ISM de 2.400 MHz e de 5.800 MHz e nas bandas de 5.200 MHz e de 5.600 MHz. Os resultados experimentais dos protótipos construídos apresentaram, de modo geral, boa concordância com os resultados fornecidos por simulação e mostraram que as antenas desenvolvidas atenderam às especificações de projeto para elas estabelecidas. Por meio de ambos os resultados experimentais e de simulação, o desempenho das antenas desenvolvidas pôde ser verificado, e demonstrou-se a efetividade do procedimento de projeto adotado. / In this work, multi-band microwave planar antennas for application in mobile terminals of wireless communication systems were developed. A study on microwave planar antennas was performed with emphasis on design techniques that enable their operation in wide bands and multiple bands. From the knowledge gained from this study, antenna configurations for mobile terminals of current mobile telephony, WLAN and WPAN systems, which have experienced in recent years great popularity worldwide, were proposed. By means of a design procedure aided by computer electromagnetic simulation, the proposed antenna configurations were analyzed and optimized in order to meet the design specifications established for operation in the afore mentioned systems. The performance that can be obtained with these antenna configurations depends on their several geometric parameters, resulting in design flexibility for obtaining the desired operation bands. Prototypes of the designed antennas were fabricated and characterized to validate the proposed antenna configurations and the design procedure employed. Four antennas were developed for operation in mobile telephony, WLAN and WPAN systems employed in Brazil, Europe and USA: a tri-band planar inverted-F antenna with novel configuration for operation in GSM, DCS and PCS standard bands; a penta-band planar inverted-F antenna with novel configuration for operation in GSM, DCS, PCS and UMTS standard bands and 2,400 MHz ISM band; two quad-band antennas, one of them planar inverted-F and the other printed monopole with novel configuration, for operation in 2,400 MHz and 5,800 MHz ISM bands and 5,200 MHz and 5,600 MHz bands. The experimental results from the fabricated prototypes exhibited, in general, good agreement with the results provided by simulation and showed that the developed antennas met the specifications established for them. By means of both simulation and experimental results, the performance of the developed antennas could be verified, and the effectiveness of the design procedure adopted was demonstrated.

Ce travail concerne la conception, la réalisation et la caractérisation d’un transformateur de commande pour interrupteurs de puissance à grille isolée, le transformateur assurant l’isolation galvanique entre étage de commande et circuit de puissance. L’objectif du travail n’était pas de répondre à un cahier des charges précis mais de développer une nouvelle voie technologique pour la réalisation de transformateur planaire intégrable. Les principales caractéristiques d’un tel transformateur sont : - une inductance élevée (rapport inductance/surface occupée le plus grand possible) ; - des résistances séries faibles ; - un couplage capacitif entre primaire et secondaire le plus faible possible. Ces contraintes nous ont conduits à étudier un transformateur planaire à couches magnétiques dont les enroulements primaire et secondaire sont enterrés dans le matériau magnétique afin de réduire l’entrefer. La structure Face to Face a été retenue avec un décalage de 45° entre enroulements primaire et secondaire. Après une étude en simulation, chaque enroulement enterré dans un matériau ferrite a été réalisé séparément puis assemblé pour donner naissance au transformateur. De très nombreuses étapes technologiques : micro usinage laser femtoseconde, dépôts de cuivre par pulvérisation cathodique, photolithographie, planarisation, gravure chimique … ont été mises en oeuvre. Le transformateur ainsi réalisé est constitué d’un empilement de couches magnétiques, conductrices et isolantes. Il a été caractérisé des très basses fréquences jusqu’à plusieurs dizaines de MHz. Les résultats de mesure obtenus sont proches des résultats de simulation, la bande passante du transformateur s’étendant de 20kHz à 7MHz / This work concerns the design, realization and characterization of a control transformer for insulated gate power switches, the transformer providing galvanic isolation between driving stage and power circuits. The aim of the work was not to respond to a precise specification but to develop a new technological path for the realization of an integrable planar transformer. The main characteristics of such transformer are: - high inductance (ratio of inductance / area occupied as large as possible); - low series resistances; - a capacitive coupling between primary and secondary as small as possible. These constraints guided us to study a planar transformer with magnetic layers whose primary and secondary windings are buried in the magnetic material in order to reduce the air gap. The Face to Face structure was chosen with a 45 ° offset between primary and secondary windings. After a numerical study, windings buried in a ferrite material were fabricated separately and then assembled to give rise to the transformer. Many technological steps: femtosecond laser micromachining, copper deposits by sputtering, photolithography, planarization, chemical etching ... have been implemented. Thus, the transformer produced consists of a stack of magnetic, conductive and insulating layers. It has been characterized from very low frequencies up to several tens of MHz. The measurement results obtained are close to simulation results, the bandwidth of the transformer extending from 20 kHz to 7 MHz

The Bistable Aerial Platform (BAP) has been developed in order to further enlarge the repertoire of devices available at the microscale. This novel device functions as a switch in that its platform can lock in two positions, up or down. Herein, it will be examined and explained, but a true understanding of its workings requires a better understanding of its compliant constituent parts. The Helico-Kinematic Platform (HKP), which serves as an actuator for the BAP, is currently under investigation by another researcher and will be merely touched upon here. The focus, therefore, will rest on the analysis of the Quadrantal Bistable Mechanism (QBM), the principle component of the BAP. A preliminary pseudo-rigid-body model, an aid for the understanding of compliant mechanisms, will also be examined for the QBM. The models developed for these two devices, the HKP and QBM, can later be combined to form a full model of the Bistable Aerial Platform.

Cette thèse porte sur le polynôme de Tutte, étudié selon différents points de vue. Dans une première partie, nous nous intéressons à l’énumération des cartes planaires munies d’une forêt couvrante, ici appelées cartes forestières, avec un poids z par face et un poids u par composante non racine de la forêt. De manière équivalente, nous comptons selon le nombre de faces les cartes planaires C pondérées par TC(u + 1; 1), où TC désigne le polynôme de Tutte de C. Nous commençons par une caractérisation purement combinatoire de la série génératrice correspondante, notée F(z; u). Nous en déduisons que F(z; u) est différentiellement algébrique en z, c’est-à-dire que F satisfait une équation différentielle polynomiale selon z. Enfin, pour u ≥ -1, nous étudions le comportement asymptotique du n-ième coefficient de F(z; u). Nous observons une transition de phase en 0, avec notamment un régime très atypique en n-3 ln-2(n) pour u ϵ [-1; 0[, témoignant d’une nouvelle classe d’universalité pour les cartes planaires. Dans une seconde partie, nous proposons un cadre unificateur pour les différentes notions d’activités utilisées dans la littérature pour décrire le polynôme de Tutte.La nouvelle notion d’activité ainsi définie est appelée Δ-activité. Elle regroupe toutes les notions d’activité déjà connues et présente de belles propriétés, comme celle de Crapo qui définit une partition (adaptée à l’activité) du treillis des sous-graphes couvrants en intervalles. Nous conjecturons en dernier lieu que toute activité qui décrit le polynôme de Tutte et qui satisfait la propriété susmentionnée de Crapo peut être définie en termes de Δ-activités. / This thesis deals with the Tutte polynomial, studied from different points of view. In the first part, we address the enumeration of planar maps equipped with a spanning forest, here called forested maps, with a weight z per face and a weight u per non-root component of the forest. Equivalently, we count (with respect to the number of faces) the planar maps C weighted by TC(u + 1; 1), where TC is the Tutte polynomial of C.We begin by a purely combinatorial characterization of the corresponding generating function, denoted by F(z; u). We deduce from this that F(z; u) is differentially algebraic in z, that is, satisfies a polynomial differential equation in z. Finally, for u ≥ -1, we study the asymptotic behaviour of the nth coefficient of F(z; u).We observe a phase transition at 0, with a very unusual regime in n-3 ln-2(n) for u ϵ [-1; 0[, which testifiesa new universality class for planar maps. In the second part, we propose a framework unifying the notions of activity used in the literature to describe the Tutte polynomial. The new notion of activity thereby defined is called Δ-activity. It gathers all the notions of activities that were already known and has nice properties, as Crapo’s property that defines a partition of the lattice of the spanning subgraphs into intervals with respect to the activity. Lastly we conjecture that every activity that describes the Tutte polynomial and that satisfies Crapo’s property can be defined in terms of Δ-activity.

一個圖形G = (V,E)，如果可以找到最小k個和弦圖，則此圖形G = (V,E)的和弦圖數是k。 在這篇論文中，我們呈現存在一個系列平行圖的boxicity是3，且和弦圖數是1或2，存在一個平面圖形的和弦圖數是3。 / The chordality of G = (V,E) is dened as the minimum k such that we can write E = E1n...nEk, where each (V,Ei) is a chordal graph. In this thesis, we present that (1) there are series-parallel graphs with boxicity 3, (2) there are series-parallel graphs with chordality 1 or 2, and (3) there are planar graphs with chordality 3.

Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic band gap; a range of wavelengths for which light propagation is forbidden. 2D PhCs exhibit most of the properties as their three dimension counterparts with a compatibility with standard semiconductor processing techniques such as epitaxial growth, electron beam lithography, Plasma deposition/etching and electromechanical lapping/polishing. Indium Phosphide (InP) is the material of choice for photonic devices especially when it comes to realization of coherent light source at 1.55 μm wavelength. Precise engineering of the nanostructures in the PhC lattice offers novel ways to confine, guide and control light in phonic integrated circuits (PICs). Strong confinement of light in PhCs offer novel opportunities in many areas of physics and engineering. Dry etching, a necessary process step in PhC device manufacturing, is known to introduce damage in the etched material. Process induced damage and its impact on the electrical and optical properties of PhCs depends on the etched material, the etching technique and process parameters. We have demonstrated a novel post-etch process based on so-called mass-transport (MT) technology for the first time on InP-based PhCs that has significantly improved side-wall verticality of etched PhC holes. A statistical analysis performed on several devices fabricated by MT process technology shows a great deal of improvement in the reliability of optical transmission characteristics which is very promising for achieving high optical quality in PhC components. Several PhC devices were manufactured using MT technology. Broad enough PhC waveguides that operate in the mono/multi-mode regime are interesting for coarse wavelength de-multiplexing. The fundamental mode and higher order mode interaction creates mini-stop band (MSB) in the dispersion diagram where the higher order mode has a lower group velocity which can be considered as slow light regime. In this thesis work, the phenomena of MSBs and its impact on transmission properties have been evaluated. We have proposed and demonstrated a method that enables spectral tuning with sub-nanometer accuracy which is based on the transmission MSB. Along the same lines most of the thesis work relates to broad enough PhC guides that operated in the multimode regime. Temperature tuning experiments on these waveguides reveals a clear red-shift with a gradient of dλ/dT=0.1 nm/˚C. MSBs in these waveguides have been studied by varying the width in incremental amounts. Analogous to semiconductors heterostructures, photonic heterostructures are composed of two photonic crystals with different band-gaps obtained either by changing the air-fill factor or by the lattice constant. Juxtaposing two PhC and the use of heterostructures in waveguide geometry has been experimentally investigated in this thesis work. In particular, in multimode line defect waveguides the “internal” MSB effect brings a new dimension in single junction-type photonic crystal waveguide (JPCW) and heterostructure W3 (HW3) for fundamental physics and applications. We have also fabricated an ultra-compact polarization beam splitter (PBS) realized by combining a multimode waveguide with internal PhC. MSBs in heterostructure waveguides have shown interesting applications such as designable band-pass flat-top filters, and resonance-like filters with high transmission. In the course of this work, InGaAsP suspended membrane technology was developed. An H2 cavity with a linewidth of ~0.4 nm, corresponding to a Q value of ~3675 has been shown. InGaAsP PhC membrane is an ideal platform to study coupled quantum well/dot-nanocavity system. / <p>QC 20120831</p>

The main objectives of this thesis were to develop a lowtemperature PECVD process suitable for optoelectronicintegration, and to optimize silica glass composition forUV-induced modifications of a refractive index in PECVDfabricated planar devices. The most important achievement isthe successful development of a low temperature silicadeposition, which for the first time makes it is possible tofabricate good quality low loss integrated components whilekeeping the temperature below 250oC during the entirefabrication process. Two strong absorption peaks thatappear at1.5 mm communication window due to N-H and Si-H bonds have beencompletely eliminated by process optimization. This openspossibilities for monolithic integration with other,temperature sensitive devices, such as semiconductor lasers anddetectors, or polymer-based structures on the common siliconplatform. PECVD technology for low loss amorphous silicon inapplication to SiO2/Si based photonic crystal structures hasbeen also optimized to remove hydrogen incorporated during thedeposition process, responsible for the porosity of thedeposited material and creation of similar to silica absorptionbands. Change of the refractive index of germanium doped silicaunder UV irradiation is commonly used for fabrication of UVinduced fiber Bragg gratings. Here we describe our achievementsin fabrication of fiber Bragg gratings and their application todistributed sensor systems. Recently we have built up a laserlab for UV treatment in application to planar technology. Wehave demonstrated the high photosensitivity of PECVD depositedGe-doped glasses (not thermally annealed) even without hydrogenloading, leading to a record transmission suppression of 47dBin a Bragg grating photoinduced in a straight buried channelwaveguide. We have also used a UV induced refractive indexchange to introduce other device modifications or functions,such as phase shift, wavelength trimming and control ofpolarization birefringence.The developed low temperature technology and the UVprocessing form a unique technology platform for development ofnovel integrated functional devices for optical communicationsystems. A substantial part of the thesis has been devoted tostudying different plasma deposition parameters and theirinfluence on the optical characteristics of fabricatedwaveguides to find the processing window giving the besttrade-off between the deposition rate,chamber temperatureduring the process, optical losses and presence of absorptionbands within the interesting wavelength range. The optimalconditions identified in this study are low pressure (300-400mTorr), high dilution of silane in nitrous oxide and high totalflow (2000 sccm), low frequency (380 KHz) RF source and high RFpower levels (800-1000 W). The thesis provides better understanding of the plasmareactions during the deposition process. RF Power is the keyparameter for increasing the rate of surface processes so as toaccommodate each atomic layer in the lowest energy statepossible. All the process conditions which favor a moreenergetic ion bombardment (i.e. low pressure, low frequency andhigh power) improve the quality of the material, making it moredense and similar to thermal oxide, but after a certain pointthe positive trend with increasing power saturates. As theenergy of the incoming ion increases, a competing effect setsin at the surface: ion induced damage and resputtering. Finally, the developed technologies were applied for thefabrication of some test and new concept devices for opticalcommunication systems including multimode interference (MMI)-based couplers/splitters, state-of-the-art arrayed waveguidegrating-based multi/ demultiplexers, the first Bragg gratingassisted MMI-based add-drop multiplexer, as well as moreresearch oriented devices such as a Mach-Zehnder switch basedon silica poling and a Photonic Crystal-based coupler. <b>Keywords:</b>silica-on-silicon technology, PECVD, plasmadeposition, photonic integrated circuits, planar waveguidedevices, UV Bragg gratings, photosensitivity, arrayed waveguidegratings, multimode interference couplers, add-dropmultiplexers.

Optical devices based on planar lightwave circuit (PLC) technology have the advantages of small size, high reliability, possibility for large scale production, and potential integration with electronics. These devices are widely employed in optical telecommunications, sensing, data storage, imaging, and signal processing. This thesis focuses on some selected PLC based devices, such as power splitters, demultiplexers, triplexers and polarization beam splitters. First, the basic principle of the waveguides and the simulation methods for PLC devices are discussed. A novel effective index method is introduced to reduce a two-dimensional structure to a one-dimensional one, and can be implemented for arbitrarily shaped waveguides. Numerical methods, such as finite-difference mode solver, beam propagation method, finite-difference time-domain method are introduced to analysis the mode profile of the waveguides, and the propagation properties of light in PLC devices. Multimode interference (MMI) couplers are widely used in many PLCs, such as power splitters, ring lasers, optical switches, and wavelength division multiplexers/demultiplexers. In this work, concepts for improving the self-imaging quality of MMI couplers are analyzed and new designs are proposed. A significant improvement in performance together with compact sizes were obtained with taper sections at the input/output of MMI couplers based on SOI, and deeply etched ridges in MMI couplers based on SiO2. A polarization insensitive dual wavelength demultiplexer based on sandwiched MMI waveguides was presented. Novel devices including triplexers and polarization beam splitters were realized by using photonic crystal (PhC) structures. Two stages of directional couplers based on PhC waveguides are cascaded to form an ultracompact triplexer. The special decoupling property of the PhC waveguide based directional coupler was utilized in the design. A novel polarization beam splitter was realized by combining a MMI coupler and a PhC which works as a polarization sensitive reflector. Finally, fabrication and optical characterization of an ultra-compact directional coupler and PhC structures in InP are presented. In a single etching step, by using the lag-effect in inductively coupled plasma reactive ion etching, a compact directional coupler (55 μm) is demonstrated. Carrier life times in PhC structures etched by chemically assisted ion beam etching were investigated, for emitter and switching applications. / QC 20100909

The last two decades have witnessed a large increase in capacity in telecommunication systems, thanks to the development of high bandwidth, fiber optic based networks. Nevertheless the continuing growth of Internet data traffic, fuelled by the development of numerous services like on-line commerce, video on demand, large audio/video files downloads, demands for a significant increase in the ability of the network nodes to manage incoming and outcoming data streams effectively and fast. The different functionalities that are needed include add/drop channel multiplexing, routing, signal reshaping and retiming, electrical/optical and optical/electrical conversion. This has stimulated a large effort towards the investigation of technologies for opto-electronic integration at a wafer level, in order to cope with all the required operations, while limiting overall costs. Among the different approaches proposed, one of the most promising is the “Silicon optical bench”, which relies on the well established VLSI technology for the microelectronics part and on planar lightwave circuits (PLCs) made either with silica-on-silicon waveguide technology (low index contrast) of amorphous silicon technology (high index contrast) on the integrated optics side. This thesis presents the development of new techniques and methodologies utilized in photonic device fabrication, which can be used to facilitate integration of temperature sensitive elements. The process is based on low temperature, plasma assisted, thick film deposition. First, a low temperature (300°C) deposition process based on Plasma assisted Chemical Vapour Deposition (PACVD) for the fabrication of silica based Planar Lightwave Circuits (PLC) is developed. The low thermal budget lends itself to monolithic integration with devices fabricated with different technologies. Absorption bands at around the wavelengths 1.48µm and 1.51µm caused by N-H and Si-H bonds within the material, respectively, had previously been thought to be intrinsic to the PACVD deposition method, when using N2O as oxidant gas of SiH4 and the other dopant precursors. The traditional method to eliminate these absorption bands was high temperature (&gt;1000°C) annealing that seriously hinders device integration. An important achievement in this thesis is the improved suppression of these two absorption bands while keeping the whole fabrication temperature below 300°C and also having a high deposition rate. A complete fabrication process for silica planar lightwave circuits was also developed, by optimising the photolithography and etching step. Finally the effect of dopants like Ge and B on the optical properties of the deposited silica glass was investigated, with particular emphasis to the photosensitive properties of the material upon illumination in the near UV. UV trimming is shown to be a versatile method to selectively control polarization birefringence of devices. Transmission dips of above 50dB were achieved in photo-induced gratings in low temperature deposited B-Ge codoped waveguide cores, without the need for hydrogen loading or other sensitisation techniques. The application of a high refractive index like amorphous silicon is addressed for the realization of efficient Bragg reflectors, either as vertical cavity laser mirrors or as dispersive element for planar waveguides used in highly selective co-directional coupler filters. Applications of amorphous silicon as core material for photonic crystal devices are also shown. The investigations carried out in this thesis show that PACVD technology can provide low-loss and UV sensitive material suitable for realizing a variety of low cost integrated devices for future all optical networks. / QC 20101004