Persistent organic pollutants (POPs) are organic compounds of anthropogenic origin that have been linked to the development of cancer, neurobehavioural impairment, and immune system biochemical alterations. These chemicals have various industrial applications as well as acting as pesticides. Dioxins and furans are some of these compounds that are unintentionally produced in combustion and industrial processes. By definition these compounds have 4 common qualities: they are highly toxic, they are resistant to environmental degradation, they are introduced into the air and water where they travel long distances, and they accumulate in fatty tissues. Photochemical degradation is a method that has been extensively researched in the last few decades. In the aqueous phase it has already been shown to be able to degrade a number of refractory organics, such as dioxins and furans. The ultimate products of this process tend to be carbon dioxide, water, and mineral anions. Air phase work has been also gaining attention in recent decades as a possible alternative to incineration methods in air pollution control. The advantages of photochemical degradation processes are that they can be initiated at low temperatures, are relatively low cost compared to incineration processes, environmentally benign, and have the potential for quick and complete degradation of organic compounds. The main aim of the research is to investigate the photochemical degradation potential of PCDD/ PCDFs in gaseous air streams as a potential air pollution control technology. In order to do this, the photodegradation reaction kinetics were determined for chlorobenzene as a suitable surrogate for PCDD/PCDFs. Three different photodegradation schemes were employed: direct photolysis, UV/O3, and UV/H2O2. In addition, ozonolysis reaction rates were also determined to evaluate the effects of on the overall photodegradation rates for the UV/O3 process. Factors such as humidity levels and temperature were investigated to determine their effects on degradation rates. Temperature and humidity were not greatly influential on the degradation rates of direct photolysis. The degradation rate of chlorobenzene at a temperature of 100°C and high humidity was noticeably reduced, but unchanged at the 10% RH and 60% RH levels for all temperatures. Ozonolysis of chlorobenzene was negligible at 30°C for all humidity levels. Ozonolysis reactions at the 60°C and 100°C levels were higher than direct photolysis rates and in the 100°C case exceeded the UV/O3 degradation rates. Ozone coupled with UV experiments proved to be the most destructive at the low temperature of 30°C and molar ratio of 10:1 ozone to chlorobenzene. There was a clear and positive relationship between the amount of ozone present in the reactor and the degradation rate. At lower ozone to chlorobenzene molar ratios the degradation rates were not much higher than those for direct photolysis of ozone. The 5:1 molar ratio saw a significant increase in degradation rates over the photolysis rates. The fastest degradation rate was achieved for the 10:1 molar ratio and high humidity, which was over 10 times the rate of direct photolysis. In addition, humidity had a noticeably significant positive effect in these reactions. The effect of temperature on the UV/ozone reaction scheme was determined for the 5:1 ozone to chlorobenzene ratio. Temperature had an interesting effect on the degradation rates at higher temperatures. As the reactor temperature increased, the degradation rates from ozonolysis and UV/O3 began to converge at 60°C, ultimately leading to the ozonolysis reaction being faster than the UV/O3. Exploratory experiments for the H2O2 scheme were performed. H2O2 had a positive influence on the degradation rate of chlorobenzene and was about 26% higher than the direct photolysis rates. However for similar conditions, the UV/O3 process had higher degradation rates as was expected from the difference in absorption values between ozone and hydrogen peroxide.

This thesis inquire into experimental decomposition of freon R-22 (CHClF2 - chlorodifluorometan) for different process conditions, by the help of pilot experimental unit in heavy laboratories DEPARTMENT of process and enviromental engineering Brno. This unit can decomposition waste gas, as the case may be combustion gas by the thermic oxidation or catalytic oxidation. Ground was in theoretical research, in which had been executed decomposition of freon R-22 in laboratory. In terms of experimental work were to be execution states for decomposition of freon R-22, next will be decomposition of freon R-22 by catalytic oxidation on catalyst Pt/Al2O3 and consequently this experiment will be analyse. Part of this thesis is exploration of facts basic way to decomposition of freon R-22, accounting of experimental unit and discussion of results.

The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 , −0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3 studied.

The landfill leachate is commonly treated for non-biodegradable organic matters, ammonia and colour. Experimental investigations using polyaluminium chlorite (PAC) and UV/O3 have been conducted for the determination of optimal pH value, reaction time and PAC concentration for the removal of chemical oxygen demand (COD) and colour. In pre-treatment coagulation stages, the highest COD and colour removal efficiencies were observed at the concentration of PAC ≥ 3,000 mglG1 and pH values between 7 and 8. However, these experiments also indicated significant removal efficiency for PAC starting with concentrations of 1,500 mglG1. The efficiency of COD and colour removal were approximately 30% and 70%, respectively. Similar efficiencies have been observed also during the second treatment stage where UV/O3 processes were used to treat coagulated leachate. After UV/O3 application, the pH of leachate reached the optimum value of 7.5 whereas the highest COD and colour removal efficiency was 55% and 72%, respectively, and the optimal reaction time was achieved after 80 min. / Nước rỉ rác sinh ra từ bãi chôn lấp chất thải rắn cần được xử lý các thành phần chất hữu cơ khó phân hủy sinh học, xử lí amoni và độ màu. Một số kết quả thử nghiệm về xử lý COD và màu của nước rỉ rác bằng việc sử dụng phương pháp keo tụ với PAC và quá trình UV/O3 đã được thực hiện cùng với việc xác định các giá trị pH tối ưu, thời gian phản ứng và nồng độ PAC tối ưu. Hiệu suất xử lý cao nhất đạt được khi nồng độ của PAC ≥ 3.000 mg/l, pH trong khoảng từ 7 đển 8 trong giai đoạn tiền xử lý. Tuy nhiên, hiệu quả loại bỏ COD và màu bắt đầu tăng rõ khi nồng độ PAC từ 1.500 mg/l trở lên. Hiệu quả loại bỏ COD và màu tương ứng là khoảng 30% và 70%. Các giá trị pH này phù hợp cho quá trình phản ứng UV/O3 được sử dụng sau giai đoạn keo tụ. Sau quá trình xử lý bằng hệ UV/O3, pH của nước rỉ rác tối ưu được xác định là 7,5 (hiệu suất xử lý COD và màu cao nhất tương ứng là 55% và 72%), thời gian phản ứng tối ưu là 80 phút.

Made available in DSpace on 2015-05-14T13:21:38Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 8317996 bytes, checksum: 64db9066ac027260f6795886de515804 (MD5) Previous issue date: 2013-10-07 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / Strontium stannate (SrSnO3) and titanate (SrTiO3) are perovskite type oxides that have orthorhombic (Pbnm) and cubic (Pm3m) structures, respectively. These materials have received much attention due to their interesting physical and chemical characteristics, leading to a variety of technological applications. In this sense, these two materials were combined to each other in order to obtain powders and thin films of a solid solution, SrSn1-xTixO3. In relation to the powders, this solid solution presented successive phase transitions ranging from orthorhombic and tetragonal structures to a cubic one with increasing of Ti4+ amount in the composition. These transitions were observed by XRD Rietveld refinement of the samples and confirmed by Raman spectroscopy. The different crystalline structures of the compositions within the solid solution led to different photoluminescent properties in the visible spectrum varying the range of emission, moving from a lower energy region to a higher one with increasing of Ti4+ in the structure (from orthorhombic (SrSnO3), tetragonal (SrSn0.75Ti0.25O3) to cubic (SrSn0.50Ti0.50O3 ; SrSn0.25Ti0.75O3 and SrTiO3). These emissions were probably favored by specific defects created inside the band gap of these materials. On the other hand, the thin films of this system showed different growth orientations that are associated to the crystalline nature of the substrates, the composition of the thin films and the deposition method (Chemical Solution Deposition - CSD - and Pulsed Laser Deposition - PLD). The films deposited on silica substrate were polycrystalline (random growth of the crystallites), whereas the films deposited on sapphire-R (Al2O3-012) were also polycrystalline, with a preferred orientation (h00) for the films deposited by PLD (textured growth), except SrTiO3 which was rotated 45° epitaxially in the sapphire plane. On the contrary, all of the films deposited on LAO (LaAlO3-100) had an (h00) epitaxial growth. In addition to that, the morphological characteristics and photocatalytic properties were strongly influenced also by the same parameters described above. Regarding the photocatalytic efficiency of the films, those obtained by CSD were more efficient than the ones obtained by PLD. Moreover, the films with Sn4+ richer compositions were the most active in the photodegradation of the azo dye Remazol yellow gold, reaching a maximum efficiency with the polycrystalline SrSnO3 thin film obtained by CSD whose degradation and decolorization percentage were 55 and 90 %, respectively. The type of orientation of the SrSnO3 films showed also a strong influence on the photodegradation of the dye. The polycrystalline films with a random orientation obtained on silica were more efficient than the textured films and these ones were more than the epitaxial films / O estanato (SrSnO3) e o titanato de estrôncio (SrTiO3) são óxidos do tipo perovskita que apresentam estrutura ortorrômbica (Pbnm) e cúbica (Pm3m), respectivamente. Estes materiais têm recebido bastante atenção nos últimos anos devido às suas características físicas e químicas interessantes, levando a diferentes tipos de aplicações tecnológicas. Portanto, estes dois materiais foram combinados com intuito de obter uma solução sólida, SrSn1-xTixO3, na forma de pós e filmes finos. Em relação aos pós, esta solução sólida apresentou transições de fase sucessivas com o aumento da quantidade de Ti4+ no sistema, passando de uma estrutura ortorrômbica à tetragonal levando à cúbica. Estas transições foram observadas através de difração de raios-X e refinamento Rietveld, e confirmadas por espectroscopia vibracional Raman. Os diferentes tipos de estrutura cristalina das composições da solução sólida levaram a diferentes propriedades fotoluminescentes no espectro visível, variando a região de emissão de mais baixa à mais alta energia com o aumento de Ti4+ na estrutura, ou seja, passando da estrutura ortorrômbica (SrSnO3), tetragonal (SrSn0,75Ti0,25O3) até à cúbica (SrSn0,50Ti0,50O3, SrSn0,25Ti0,75O3 e SrTiO3). Estas emissões foram provavelmente favorecidas pelos tipos de defeitos específicos criados dentro do band gap destes materiais. Por outro lado, os filmes finos deste sistema apresentaram diferentes tipos de crescimento os quais são associados à natureza cristalina dos substratos, composição dos filmes e com o método de deposição utilizado (método de deposição química em solução - CSD - e método de deposição por laser pulsado PLD). Os filmes depositados sobre sílica e safira-R (Al2O3-012) apresentaram como policristalinos (crescimento aleatorio dos cristalitos), enquanto os filmes depositados por PLD apresentaram orientação preferencial (h00) (crescimento texturizado), com exceção do filme de SrTiO3 que é epitaxial rotacionado em 45º no plano da safira-R. Todos os filmes depositados através dos dois métodos de deposição sobre LAO (LaAlO3-100) apresentaram um crescimento epitaxial (h00). Além disso, as características morfológicas e as propriedades fotocatalíticas também apresentaram forte influencia dos mesmos parâmetros acima citados. Em relação às propriedades fotocatalíticas, os filmes obtidos pelo método CSD apresentaram maior eficiência que os obtidos por PLD e os filmes com composições mais ricas em Sn4+ foram os mais ativos na fotodegradação do corante azo Remazol amarelo ouro, chegando a uma eficiência fotocatalítica máxima com o filme policristalino de SrSnO3 obtido por CSD com percentagem de degradação e de descoloração de 55 e 90 %, respectivamente. A orientação dos filmes de SrSnO3 também mostrou uma forte influencia na fotodegradação do corante, sendo os filmes policristalinos com orientação aleatória mais eficiente que o texturizado e estes por sua vez mais eficientes que os epitaxiais

La diversification des fonctionnalités intégrées dans les systèmes micro-optoélectroniques est l'un point clé du développement de ces filières. Combiner sur une même puce des matériaux ayant des propriétés différentes doit permettre de faire émerger de nouveaux concepts de composants basés sur de nouveaux effets physiques ou sur la combinaison des propriétés physiques des matériaux intégrés. Parmi les matériaux d'intérêt, les semi-conducteurs III-V présentent des propriétés optiques exceptionnelles et sont couramment utilisés pour réaliser des composants photoniques. Les oxydes fonctionnels, quant à eux, offrent une grande variété de propriétés physiques qui en font des matériaux très prometteurs pour de nombreuses applications. Dans ce contexte, l'objectif global de cette thèse est de démontrer la possibilité d'intégrer des oxydes fonctionnels cristallins sur des hétérostructures à base de GaAs par épitaxie, et de montrer que de telles structures peuvent présenter des propriétés nouvelles pour la photonique. Plus précisément, nous avons focalisé nos efforts sur l'intégration de couches minces de PZT sur des structures à puits quantiques InGaAs/GaAs via des couches tampons de SrTiO3 (STO). Nous avons étudié et développé la croissance par épitaxie par jets moléculaires (MBE) des templates de STO sur GaAs. La forte hétérogénéité entre ces deux types de matériaux nécessite d'avoir recours à des stratégies d'ingénierie d'interface spécifiques et à un excellent contrôle des paramètres de croissance. Nous avons mis en évidence les effets bénéfiques sur la qualité structurale du STO d'une préparation de la surface de GaAs au Ti. Pour ces études, nous avons utilisé la spectroscopie de photoélectrons (XPS, in-situ ou en collaboration avec la ligne TEMPO du synchrotron SOLEIL) et microscopie électronique en transmission (TEM, en collaboration avec le LPN). Ces expériences nous ont permis de sonder structure et chimie de l'interface semi-conducteur/oxyde. Nous avons également étudié les mécanismes de croissance et de cristallisation du STO sur GaAs, en mettant notamment en œuvre des expériences d'XPS in-situ au synchrotron SOLEIL. La compréhension de ces mécanismes spécifiques nous a permis d'adapter les conditions de croissance du STO et d'obtenir des couches tampons d'excellente qualité. Nous avons étudié la croissance de couches minces de PZT sur des structures à puits quantique d'In- GaAs/GaAs via des templates de STO. Nous avons tout d'abord montré que les procédés standards de croissance de PZT (sol-gel ou ablation laser (collaboration avec l'IEF)) conduisaient à de fortes dégradations des puits quantiques du fait des réactions chimiques entre l'oxyde et le matériau III-V. Nous avons étudié les mécanismes de ces dégradations et mis en évidence une forte affinité chimique entre l'As, le Pb et le Sr. Pour pallier cette difficulté, nous avons modifié le procédé de croissance du PZT ainsi que l'hétérostructure III-V (enfouissement du puits, ajout d'AlAs ...). Ces actions combinées nous ont permis de réaliser des couches minces de PZT ferroélectriques sur des structures à puits quantiques d'InGaAs/GaAs. Nous avons ensuite défini un design d'émetteur accordable basé sur une hétérostructure PZT/GaAs/InGaAs. De tels émetteurs ont été réalisés en collaboration avec l'IEF) et mesurés leurs propriétés mécaniques et optiques en effectuant des expériences sous champ. Enfin, nous avons effectué un certain nombre d'études préliminaires visant à démontrer la possibilité d'intégrer des hétérostructures à base de GaAs sur des substrats de Si recouverts de couches tampons de STO. Nous avons pour cela envisagé et étudié la possibilité d'utiliser des composés Zintl-Klemm d'interface susceptibles de minimiser l'énergie d'interface entre le GaAs et le STO. / Diversification of the materials and functionalities integrated on silicon is an important issue for further progression in the field of micro-optoelectronics. The monolithic heterogeneous integration of new materials on silicon, and more generally the combination on the same wafer of materials having different physical properties is a key challenge. Amongst the materials of interest, III-V semiconductors are the object of specific attention because their optoelectronic and transport properties are superior to those of silicon. Similarly, the so-called functional oxides have interesting physical properties (ferroelectricity, ferromagnetism, piezoelectricity, etc.) making them suitable for various applications (NVM, energy harvesters, MEMS . . . ). In this context, the goal of this thesis is to demonstrate the possible integration of crystalline functional oxides on GaAs-based heterostructures using epitaxy and that such structures show new properties for photonic. More precisely, we focused on integration PZT thin film on InGaAs/GaAs quantum wells structures thanks to SrTiO3 (STO) buffer layer. We first studied and developed the growth of STO on GaAs templates using molecular beam epitaxy (MBE). Because of the strong heterogeneity between the two materials, specific interface engineering strategies are required. We highlight the benefit of a Ti-based GaAs surface treatment on the structural quality of STO. For these studies we used photoelectrons spectroscopy (XPS, in-situ and collaboration with TEMPO beam line of SOLEIL synchrotron) and transmission electron spectroscopy (TEM, collaboration with LPN/C2N). Those experiments allowed us to probe both structural and chemical aspects of the semiconductor/ oxide interface. We also studied the growth mechanism of STO on GaAs through in-situ XPS experiments at SOLEIL. Thanks to the understanding of those specifics mechanisms, we could accommodate the growth conditions to obtain good quality STO buffer layers. Then we studied the growth of thin film PZT on InGaAs/GaAs quantum well structures by means of STO templates. We first showed that standard growth process (sol-gel and pulsed laser deposition at IEF/C2N) lead to strong deterioration of quantum well due to chemical reactions between the oxide and the III-V material. We studied the mechanisms involved in this deterioration and highlight the strong chemical affinity between As, Pb and Sr. To palliate this difficulty, the growth process of PZT has been modify and an AlAs “sacrificial” layers has been added in order to limit the oxygen difiusion into the substrate. Thanks to these two solutions, it has been possible to realize a PZT ferroelectric thin film on an InGaAs/GaAs quantum well heterostructure. A tunable source based on such heterostructure has been designed. In this device, the strain induced in the ferroelectric PZT by an electric field is transmitted to the substrate and the quantum well modifying its emitted wavelength. We simulated this device in order to optimize its dimensions. Then we realized this device (collaboration with IEF/C2N) and measured its mechanical and optical properties under an electric field. We also performed preliminary studies in order to demonstrate the possible integration of GaAs-based heterostructures on Si substrates in by the means of STO buffer layer. We considered the use of Zintl- Klemm compounds to minimize the interface energy between GaAs and STO allowing 2D growth of the semiconductor on the oxide.

Ba(Zr0.1Ce0.7Y0.2)O3-£_ (BZCY) shows high proton conductivity as well as high chemical stability over a wide range of solid oxide fuel cell (SOFC) operating conditions. Sm0.5Sr0.5CoO3-£_ (SSC) cathode deposited by electrostatic spray deposition (ESD) on SOFC half cell obtained via tape-casting shows porous and reticular microstructure, and the SOFC single cell consists of substrate/ BZCY+NiO/ BZCY/ SSC. The electrolyte thickness decrease from 22 £gm, 20 £gm, 17.6 £gm to 15.1 £gm after sintering as the content of carbon pore former in the corresponding anode functional layer increased from 0.0 wt.%, 5.0 wt.%, 10.0 wt.% to 15.0 wt.%, and the maximum power density of corresponding cells at 700¢J varies from 476.89 mW/cm2, 713.34 mW/cm2, 862.50 mW/cm2 to 706.89 mW/cm2, respectively.

This study investigates the rate kinetics for BD and PGMEA oxidation by UV/O3 process. The reactor constructs of a 100 cm x 20 cm x 85 cm (L x W x H) stainless steel chamber, in which four vertical steel plates (20 cm x 65 cm, W x H) were inserted to establish a plug flow path for the flowing gas. The reactor has a total effective volume of 170 L. Each of the five compartments of the reactor is equipped with an individual UV irradiation system with a 3.0-cm x 15-cm (ID x L) quartz sheath that housed an UV lamp, and two electric UV power inputs of 0.147 or 0.294 W/L were obtained. The gas flows perpendicularly to the UV lamps in the reactor. The influent tested VOC concentration was adjusted to about 50 ppm, and the gas flows were controlled at the individual flow rate of 60 and 120 L/min. The effects of moisture content (relative humidity, RH), ozone dosage (initial molar ratio of ozone to the tested VOC, m) and UV volumetric electric power input on the removal of the tested VOCs are investigated in the study. Also, kinetic models of the tested VOCs by photolysis, ozonation and UV/O3 have been developed and confirmed with reference to the experimental data. According to the kinetic models, both photolysis rate and oxidation rate by UV/O3 are following the first order behavior with respect to the tested VOC concentrations which are low. The result reveals the absorbance for the reactions is weak absorbance under UV irradiation. The reaction rates are proportional to the UV electric power inputs in UV-initiated reactions. And the parameter, £i, which represents the ratio of OH radical consumption rate by the tested VOC to the total OH radical consumption rate, can be obtained by simulating the performance of experimental data of OH reactions. The experimental results reveal that for BD oxidation with a gas space time of 85 sec and RH = 40 ¡V 99%, BD photolysis did not occur at wavelength of 185 nm with UV electric power inputs of 0.147 and 0.294 W/L. The ozonation efficiency of BD reached 90% at m = 3.5, and RH had no influence on the removal efficiency of BD. The removal efficiencies by UV/O3 process reached 90% with m = 2.2 and 1.6 for UV power inputs of 0.147 and 0.294 W/L, respectively. The addition of ozone apparently encouraged BD removal efficiency by UV/O3 process. And the enhancement of ozone dosage (m = 0.5 ¡V 4.4) would promote the decomposition of BD more effectively than the enhancements of UV power input (from 0.147 to 0.294 W L-1) and RH (from 40 to 99%). For PGMEA photolysis in a batch reactor with volume of 1.188 L, the photolysis occurred at wavelength of 185 nm under UV irradiation. And the photolysis rate follows the first order behavior with respect to the concentration of PGMEA. But PGMEA photolysis did not occurred at UV wavelength of 254 nm. PGMEA ozonation was performed in the same batch reactor; and the removal efficiency of only 50% at m = 3.96 would take 35 min. So, PGMEA ozonation in the plug flow reactor did not be observed at the conditions of the gas space time of 85 sec and RH = 15 ¡V 99%. Besides, the photolysis of PGMEA was carried out at the above conditions. The removal efficiency of PGMEA by UV/O3 could reach 90% at the conditions of the gas space time of 170 sec, UV volumetric electric power input of 0.294 W/L and m = 2.9. And the enhancement of UV power input (from 0.147 to 0.294 W L-1) would promote the decomposition of PGMEA more effectively than the addition of ozone dosage (m = 1.05 ¡V 15.63) and RH = 15 ¡V 99%.

DMSO (dimethyl sulfoxide) is a liquid with a high boiling point (189 oC) that has been extensively utilized in various industries owing to its ability to dissolve various organic and inorganic compounds. DMSO is increasingly being adopted as a detergent or a photo-resistant stripping solvent in manufacturing semiconductors and liquid crystal displays (LCD). Therefore, DMSO is now a major component of wastewater. The biological treatment of DMSO-containing wastewater generates noxious DMS (dimethyl sulfide) and other compounds that may cause odor problems. Also having a high water solubility and a moderate boiling point (110 oC), tetrafluoro propanol (TFP) has been extensively applied in the manufacture of CD-R and DVD-R, due to its ability to dissolve organic dyes. The spin coating process produces a large amount of wastewater containing TFP. No reports have been written on the biodegradability of TFP to the authors¡¦ knowledge. Additionally, HMDS (hexamethyldisilazane) has been extensively used in life science microscopy and material science. For instance, the semiconductor industry employs HMDS to promote the adhesion of photo-resistant material to oxide(s). HMDS is classified as a carcinogen, and has an ammonia odor. Condensing incinerators have been found to be unsuitable for treating HMDS-containing waste gases, because of the formation of silicon dioxide, which blocks porous adsorbents. Biological treatment also appears to be unpromising due to its low water solubility and limited biodegradability. This investigation evaluates the feasibility, effectiveness and oxidation characteristics of aqueous DMSO, TFP and gaseous HMDS (hexamethyldisilazane) by UV/O3 processes. A reactor made entirely of acrylic plastic with an effective volume of 10 L was employed for the reactions. The tested VOCs concentrations were adjusted to 400¡V890mg/L and 772¡V887 mg/L for DMSO and TFP, respectively, and the gas (ozone-enriched air) flow rate was controlled at 3L/min. The effects of various solution pH values (acidic, alkaline, uncontrolled), solution temperatures (26 oC, 37 oC, 48 oC and 60 oC), and UV wavelengths (254 nm and 185+254 nm) on the removal of tested VOCs were studied . Additionally, the operation costs of treating DMSO and TFP by UV/O3 were estimated. Experimental results demonstrate that acidic conditions (pH = 3.6) favored the degradation of DMSO, and that the removal efficiency could reach 95% at a volumetric UV intensity P/V of 2.25 W/L and a reaction time of 120 min. However, alkaline conditions (pH = 9.5) favored the decomposition of TFP, with the removal efficiency reaching 95% at P/V = 2.5 W/L and a reaction time of 60 min. Both DMSO and TFP exhibited zero-order degradation kinetics when sufficient ozone was supplied. Raising the oxidation temperature did not increase the UV/O3 oxidation of TFP in the tested concentration and temperature ranges. Operation costs of the UV/O3 per unit volume of wastewater with DMSO or TFP are comparable to those of the methods described in the literature. For the gaseous HMDS oxidation, two batch reactors with effective volumes of 1.2 and 5.8 L were used employed with the decomposition occurred under UV (185+254 nm) irradiation and UV (254 nm)/O3 processes. Tests were performed with initial HMDS concentrations of 32¡V41mg/m3 under various initial ozone dosages (O3 (mg)/HMDS (mg) =1¡V5), atmospheres (N2, O2, and air), temperatures (28 oC, 46 oC, 65 oC and 80 oC), relative humilities (20%, 50%, 65% and 99%) and volumetric UV power inputs (0.87 W/L, 1.74 W/L, 4.07 W/L and 8.16 W/L) to assess their effects on the HMDS degradation rate. Results of this study demonstrate that the decomposition rates for the UV (185+254 nm) irradiation exceeded those for the UV (254 nm)/O3 process for all conditions. UV (185+254 nm) decompositions of HMDS displayed apparent first-order kinetics. A process with irradiation of UV (185+254 nm) to HMDS in air saturated with water at temperatures of 46¡V80 oC favors the HMDS degradation. With the above conditions and a P/V of around 8 W/L, k≈ 0.20 s−1, and over 90% of the initial HMDS was degraded in a time of 12s. The main mechanisms for the HMDS in wet air streams irradiated with UV (185+254 nm) were found to be caused by OH free radical oxidation produced from photolysis of water or O (1D) produced from photolysis of oxygen. Economic evaluation factors of UV (185+254 nm) and UV (254 nm)/O3 processes at various UV power inputs were also estimated.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19372号 / 工博第4117号 / 新制||工||1635(附属図書館) / 32386 / 新制||工||1635 / 京都大学大学院工学研究科都市環境工学専攻 / (主査)教授 伊藤 禎彦, 教授 田中 宏明, 教授 米田 稔 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM