elementares da eletrônica orgânica, vêm sendo desenvolvidos e integrados para realização de dispositivos eletrônicos de baixo custo, alto volume e flexíveis. Nesta tese foi proposta uma tecnologia para a construção de OFETs sobre substrato flexível e a caracterização destes dispositivos foi feita. Transistores com diferentes comprimentos de canal (L= 5, 10, 20 e 40 μm) foram construídos e avaliados. As características e configuração do poli (álcool vinílico) (PVA) como dielétrico de porta foram definidas através da otimização da reticulação, grau de hidrólise e peso molecular. O PVA utilizado como dielétrico de porta foi de alto peso molecular, hidrolização incompleta e reticulado com dicromato de amônia. O desafio de compatibilização entre os filmes de PVA e poli (3-hexiltiofeno) (P3HT) com diferentes polaridades foi superado e abriu caminho para construção de OFETs e capacitores, estes últimos usados para extrair a capacitância por unidade de área do conjunto PVA-P3HT. Os processos desenvolvidos de fotolitografia e de oxidação por plasma de oxigênio possibilitaram a construção de transistores flexíveis inéditos de Ni-P3HT-PVA-Al com uma arquitetura top-gate, bottom-contacts. Os transistores apresentaram boas características de saída, baixa tensão de operação (< |-6 V|), boa mobilidade (0,015 cm2/V*s) e razões ION/IOFF aceitáveis (~300). A resistência de contato e mobilidade efetiva foram obtidas através do método de linhas de transmissão. Uma boa estabilidade temporal foi atingida, porém ocorreram instabilidades na operação quando os transistores foram testados. A corrente do transistor não se manteve estável, primeiramente aumentou e depois diminuiu com a realização de sucessivas medidas. As razões deste comportamento foram discutidas. Inversores foram demonstrados e caracterizados. O aperfeiçoamento da tecnologia desenvolvida possibilitará a construção de circuitos orgânicos analógicos e digitais para aplicações cotidianas que demandem baixo custo e alto volume. / Organic field effect transistors (OFETs), the elementary components of organic electronics, are constantly developed and integrated to realize low cost, high volume, flexible electronic devices. In this thesis a technology for creating OFETs on flexible substrates is proposed and their characterization is performed. Flexible transistors with different channel lengths (L= 5, 10, 20 and 40 μm) were built and evaluated. The characteristics and configurations of the poly (vinyl alcohol) (PVA) as gate dielectric were defined through the optimization of crosslinking, the degree of hydrolysis and the molecular weight. The chosen PVA is cross-linked with ammonium dichromate, has a high molecular weight and incomplete hydrolization. The challenge of integrating polymers of different polarities: PVA and poly (3-hexyl thiophene) (P3HT), the chosen organic semiconductor, was overcome and opened a path to the construction of OFETs and capacitors. From the later capacitance per unit area was extracted. The developed processes of photolithography and oxygen plasma etching allowed the construction of unprecedented Ni-P3HT-PVA-Al flexible top-gate, bottomcontacts transistors. The transistors showed good output characteristics, low operation voltages (< |-6 V|), acceptable carrier mobilities (0,015 cm2/V*s) and ION/IOFF fractions (~300). Contact resistance and effective mobility were extracted through transmission line method. The transistors showed great temporal stability, but when operated instabilities occurred. The transistor output current first increased and later degraded with successive testing. Organic PMIS inverters were demonstrated and characterized. The optimization of this technology may lead to construction of flexible logic organic devices for everyday applications.

Tato práce je zaměřena na studium vlastností organických polovodivých materiálů se zaměřením na jejich vodivost a pohyblivost nosičů náboje. Hlavním cílem této práce je objasnit vztah mezi chemickou strukturou organických polovodičů a jejich vlastnostmi. Teoretická část práce je zaměřena na základy organických polovodičů, transport náboje a přehled vlastností organických polovodivých materiálů, které vedly k jejich aplikaci v polních a elektrochemických tranzistorech. Experimentální část představuje přehled použitých materiálů, způsoby jejich přípravy a charakterizační metody. V rámci výsledkové části bylo vyvinuto nebo optimalizováno několik metod pro přípravu tenkých vrstev a následně byl studován jejich vliv na výkon organických polem řízených tranzistorů. Byly charakterizovány a diskutovány relevantní vlastnosti nových organických polovodivých materiálů se zaměřením na pohyblivost nosičů náboje. Byla charakterizována a diskutována biokompatibilita několika organických polovodičů. Elektrické vlastnosti, stabilita a biokompatibilita elektroaktivních polymerních inkoustů na bázi PEDOT:PSS byla charakterizována a diskutována s ohledem na jejich možné použití v bioelektronice. Nakonec byl zkonstruován organický bioelektronický senzor pro detekci fyziologické odpovědi kardiomyocytů na základě studovaných materiálů.

Tesis por compendio / [ES] RESUMEN La Electrónica Orgánica ha experimentado un gran avance en las últimas décadas, desde que en los años 70 se descubrieran los polímeros conductores. Las características únicas de los semiconductores orgánicos, han permitido el desarrollo de dispositivos electrónicos flexibles y con múltiple funcionalidad, mediante técnicas de fabricación a temperatura ambiente y bajo coste. Uno de los campos en los que estos dispositivos orgánicos han despertado mayor interés es el de su aplicación como sensores. En particular, los sensores basados en los denominados Transistores Orgánicos de película delgada (OTFT's) han experimentado un gran desarrollo debido a sus múltiples ventajas, como simplicidad, elevada sensibilidad, y posibilidad de miniaturización. Existen dos tipos principales de OTFT's: Transistor Orgánico de Efecto de Campo (OFET) y Transistor Electroquímico Orgánico (OECT). Los OECT's constan de tres electrodos (surtidor, drenador y puerta), un semiconductor orgánico (OSC), y un electrolito en contacto con el semiconductor. El funcionamiento de los sensores basados en OECT's se basa en la modulación de la corriente del canal por dopaje o de-dopaje electroquímico desde el electrolito, cuando se aplican tensiones de puerta. Los OECT's resultan especialmente adecuados como sensores químicos debido a su capacidad de operar en medios acuosos. En este trabajo, se han desarrollado OECT's basados en el OSC PEDOT:PSS mediante tecnología Screen-printing. Los transistores se han diseñado variando su geometría, parámetro del que depende la sensibilidad del sensor. Mediante la caracterización eléctrica de los OECT's, se ha podido determinar la geometría óptima en función del analito a detectar. Finalmente, se ha comprobado experimentalmente la validez de estos OECT's como sensores de cationes de diferentes tamaños y de ácido ascórbico, obteniéndose resultados muy satisfactorios. Los OFET's, se han preparado depositando el OSC sobre el dieléctrico y para obtener el canal cuya corriente se modula con la tensión aplicada al electrodo de puerta. En la mayoría de los sensores basados en OFET's, el semiconductor está expuesto al analito. Su funcionamiento se basa en la modificación de la corriente del canal por dopaje o captura de cargas en presencia del analito. En este trabajo, se han desarrollado OFET's basados en TIPS-Pentacene mediante las tecnologías Drop-casting y Spin-coating. Tras establecer la mejor técnica de deposición del semiconductor orgánico se han caracterizado eléctricamente los OFET's. La caracterización eléctrica de estos transistores orgánicos es fundamental para optimizar su uso como sensores químicos. No obstante, las propiedades únicas de los OSC's dificultan la caracterización eléctrica de estos dispositivos con los equipos comerciales actuales, diseñados todos ellos para la caracterización de transistores de Silicio. Para suplir esta necesidad, se ha diseñado un equipo para la caracterización de transistores orgánicos, utilizando componentes comerciales de bajo coste y un software desarrollado específicamente para la determinación de los parámetros característicos de OECT's y OFET's fijados en la norma estándar IEEE 1620-2008. / [CA] RESUM La Electrònica Orgànica ha experimentat un gran avanç en les últimes dècades, des que en els anys 70 es descobrissin els polímers conductors. Les característiques úniques dels semiconductors orgànics, han permès el desenvolupament de dispositius electrònics flexibles i amb múltiple funcionalitat, mitjançant tècniques de fabricació a temperatura ambient i baix cost. Un dels camps en què aquests dispositius orgànics han despertat més interès és el de la seva aplicació com a sensors. En particular, els sensors basats en els denominats Transistors Orgànics de pel·lícula prima (OTFT s) han experimentat un gran desenvolupament a causa dels seus múltiples avantatges, com simplicitat, elevada sensibilitat, i possibilitat de miniaturització. Hi ha dos tipus principals de OTFT s: Transistor Orgànics d'Efecte de Camp (OFET) i Transistor Electroquímic Orgànic (OECT). Els OECT's consten de tres elèctrodes (sortidor, drenador i porta), un semiconductor orgànic (OSC), i un electròlit en contacte amb el semiconductor. El funcionament dels sensors basats en OECT's es basa en la modulació del corrent del canal per dopatge o de-dopatge electroquímic des del electròlit, quan s'apliquen tensions de porta. Els OECT's resulten especialment adequats com a sensors químics per la seva capacitat d'operar en mitjans aquosos. En aquest treball, s'han desenvolupat OECT's basats en el OSC PEDOT: PSS mitjançant tecnologia Screen-printing. Els transistors s'han dissenyat variant la seua geometria, paràmetre del qual depèn la sensibilitat del sensor. Mitjançant la caracterització elèctrica dels OECT's, s'ha pogut determinar la geometria òptima en funció de l'analit a detectar. Finalment, s'ha comprovat experimentalment la validesa d'aquests OECT's com a sensors de cations de diferents mides i d'àcid ascòrbic, obtenint-se resultats molt satisfactoris. Els OFET's, s'han preparat dipositant el OSC sobre el dielèctric per obtenir el canal i la corrent es modula amb la tensió aplicada a l'elèctrode de porta. En la majoria dels sensors basats en OFET's, el semiconductor està exposat al analit. El seu funcionament es basa en la modificació del corrent del canal per dopatge o captura de càrregues en presència de l'analit. En aquest treball, s'han desenvolupat OFET's basats en TIPS-Pentacene mitjançant les tecnologies "Drop-càsting" i "Spin-coating". Després d'establir la millor tècnica de deposició del semiconductor orgànic s'han caracteritzat elèctricament els OFET's La caracterització elèctrica d'aquests transistors orgànics és fonamental per optimitzar el seu ús com a sensors químics. No obstant això, les propietats úniques dels OSC's dificulten la caracterització elèctrica d'aquests dispositius amb els equips comercials actuals, dissenyats tots ells per a la caracterització de transistors de silici. Per suplir aquesta necessitat, s'ha dissenyat un equip per a la caracterització de transistors orgànics, utilitzant components comercials de baix cost i un programari desenvolupat específicament per a la determinació dels paràmetres característics de OECT's i OFET's fixats en la norma estàndard IEEE 1620-2008. / [EN] ABSTRACT Organic Electronics has been extensively developed along these past decades, since the discovery of conducting polymers in the 1970s. The unique features that these organic semiconductors can offer have allowed the development of many electronic devices with mechanical flexibility and multiple functionalities, using low-temperature and low-cost fabrication technologies. These organic devices have attracted considerable interest for their use in many fields, especially for sensing applications. In particular, Organic Thin-Film Transistors (OTFTs) have paved the way towards the fabrication of efficient sensors due to their many advantages, such as simplicity, high sensitivity, and facile miniaturization. OTFTs can be classified into two types of transistors: Organic Field Effect Transistors (OFET) and Organic Electrochemical Transistors (OECT). The essential components of an OECT are an organic semiconductor film, three electrodes (source, drain and gate), and an electrolyte bridging the semiconductor and the gate electrode. The operation of an OECT-based sensor lies on the modulation of the channel current by electrochemical doping or de-doping from the electrolyte, when gate voltages are applied. OECTs have attracted considerable interest for their application as chemical sensors due to their ability to operate in aqueous environments. In this work, PEDOT: PSS-based OECTs have been prepared by Screen-printing. The effect of the geometry on the sensor sensitivity has been investigated by comparing OECTs with different channel and gate areas ratio. The electrical characteristics of the OECTs have been used to determine the geometry that optimizes their performance for sensing different analytes. Finally, the use of these OECTs for the detection of cations and ascorbic acid has been experimentally assessed, with satisfactory and promising results. The OFET's have been prepared by depositing the organic semiconductor on the dielectric and thus obtain the chanel whose current is modulated by the voltage applied to the gate electrode. In most of the OFET-based sensors, the semiconductor is exposed to the analyte. Their operation is based on the modification of the channel current by charge doping or trapping due to the analyte. In this work, OFETs based on TIPS-pentacene have been prepared by Drop-casting and Spin-coating. The best technique for deposition of this organic semiconductor has been initially identified. Then, the electrical characteristics of these OFETs have been determined. The electrical characterization of these organic transistors is essential for their optimization as chemical sensors. However, the unique properties of organic semiconductors render difficult the electrical characterization of these transistors with current commercial devices, since these have been all designed for characterizing Si-based transistors. A device which allows for systematic characterization of organic transistors has been designed therefore, using low-cost commercial components and a software that has been specifically developed for the determination of the reporting parameters for OFETs and OECTs, as specified in the IEEE 1620-2008 standard. / El trabajo desarrollado en los artículos ha sido posible gracias a los distintos proyectos de investigación de financiación pública dentro del marco de proyectos del Ministerio de Educación y Ciencia del Gobierno de España/Fondos FEDER (grant number MAT2015-64139-C4-3-R (MINECO/FEDER)) y Fondos de la Generalitat Valenciana (grant number AICO/2015/103). / Pérez Fuster, C. (2019). Diseño y caracterización de sensores para la medida de parámetros químicos y biológicos mediante Organic Thin-film transistors [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/118793 / TESIS / Compendio

We present fabrication of n-type organic field effect transistors (OFETs) using densely aligned array carbon nanotube (CNT) electrodes. The CNTs were aligned with a high linear density via dielectrophoresis (DEP) from an aqueous solution. In order to fabricate the CNT electrodes, aligned CNTs were cut by using electron beam lithography (EBL) and precise oxygen plasma etching. The n-type OFETs were fabricated in a bottom-contact configuration by depositing a thin film of C60 molecules between the CNT source and drain electrodes, and compared against a controlled C60 OFET with gold electrodes. The electron transport measurements of the OFETs using CNT electrodes show better transistor characteristics compared to OFETs using gold electrodes due to improved charge injection from densely aligned and open-ended nanotube tips.

No description available.

Thin-film organic field effect transistors (OFETs) have attracted growing interest in recent years due to their promising electrical, optical and mechanical properties. Especially, oligothiophenes and their derivates are candidates with good prospects for application as the organic semiconducting material in such devices. They possess an extended, polarisable aromatic π-electron system that promotes a high structural arrangement of the molecules. The charge transport in the organic film is realised in the direction perpendicular to the plane of the thiophene rings via a hopping transport mechanism. Thus, a good π-π-overlap and a consequent stacking of the thiophene molecules in the film perpendicular to the gate substrate is essential to achieve excellent electric properties such as high charge carrier mobilities and low resistive losses. The highly polarisable thiophene-based molecules are also very attractive materials that are potentially applicable as the field-sensitive organic semiconducting component of a ferroelectric OFET device. In such a device, the dielectric gate element of a conventional OFET setup is substituted by a ferroelectric substrate. The electric field that is induced by the polarisation of the ferroelectric material serves as gate field and controlls the charge injection and charge density inside the device. In this thesis, thiophene-based molecules are investigated in detail with respect to their application as field-sensitive organic semiconducting component in a ferroelectric OFET device employing quantum-chemical ab initio and DFT-based methods. We demonstrate that the phosphonic acids can bind the organic molecules to the dielectric or ferroelectric material and well-anchored, robust self-assembled monolayers are formed. Furthermore, special focus is put on the influence of the intermolecular interactions among the organic molecules on the technologically relevant structural and electronic properties. It is found that the CN···HC hydrogen bond link the molecules into extended ribbons, but the π-π-stacking-stacking interaction is the main driving force in the self-assembly of the molecules. We also establish in detail the influence of the electric field on the phosphonic acid anchoring molecule and some quarterthiophene derivates. For the latter, the strongest field-sensitivity is obtained for an external electric field aligned parallel to the extension of the thiophene framework. Hence, they are suitable to act as the field-sensitive organic components in devices that take advantage of a band-gap engineering. Moreover, the present results emphasise the importance of the adsorption morphology of the molecules in the film in a π-stacked fashion with their longitudinal axis oriented parallel to the (orthonormal) electric field induced by the ferroelectric substrate.

Thin-film organic field effect transistors (OFETs) have attracted growing interest in recent years due to their promising electrical, optical and mechanical properties. Especially, oligothiophenes and their derivates are candidates with good prospects for application as the organic semiconducting material in such devices. They possess an extended, polarisable aromatic π-electron system that promotes a high structural arrangement of the molecules. The charge transport in the organic film is realised in the direction perpendicular to the plane of the thiophene rings via a hopping transport mechanism. Thus, a good π-π-overlap and a consequent stacking of the thiophene molecules in the film perpendicular to the gate substrate is essential to achieve excellent electric properties such as high charge carrier mobilities and low resistive losses. The highly polarisable thiophene-based molecules are also very attractive materials that are potentially applicable as the field-sensitive organic semiconducting component of a ferroelectric OFET device. In such a device, the dielectric gate element of a conventional OFET setup is substituted by a ferroelectric substrate. The electric field that is induced by the polarisation of the ferroelectric material serves as gate field and controlls the charge injection and charge density inside the device. In this thesis, thiophene-based molecules are investigated in detail with respect to their application as field-sensitive organic semiconducting component in a ferroelectric OFET device employing quantum-chemical ab initio and DFT-based methods. We demonstrate that the phosphonic acids can bind the organic molecules to the dielectric or ferroelectric material and well-anchored, robust self-assembled monolayers are formed. Furthermore, special focus is put on the influence of the intermolecular interactions among the organic molecules on the technologically relevant structural and electronic properties. It is found that the CN···HC hydrogen bond link the molecules into extended ribbons, but the π-π-stacking-stacking interaction is the main driving force in the self-assembly of the molecules. We also establish in detail the influence of the electric field on the phosphonic acid anchoring molecule and some quarterthiophene derivates. For the latter, the strongest field-sensitivity is obtained for an external electric field aligned parallel to the extension of the thiophene framework. Hence, they are suitable to act as the field-sensitive organic components in devices that take advantage of a band-gap engineering. Moreover, the present results emphasise the importance of the adsorption morphology of the molecules in the film in a π-stacked fashion with their longitudinal axis oriented parallel to the (orthonormal) electric field induced by the ferroelectric substrate.

[pt] Este trabalho apresenta o estudo da mobilidade de portadores de carga em filmes finos de poli(3-hexiltiofeno) rrP3HT modificados: (a) fisicamente, através da mistura do rrP3HT com o polimetilmetacrilato, PMMA, com diferentes solventes e concentrações; e (b) quimicamente, através da sínteses de novos polímeros baseados de politiofenos com poliselenofeno rrP3HTCoSe com 5 e 10 porcento de Se. Todos os filmes fabricados foram caracterizados através de medidas de absorção UV-Vis, fotoluminescência e absorção no infravermelho. Para as blendas rrP3HT:PMMA, a partir destes espectros e usando o modelo de Spano, foram determinados os valores de acoplamento excitônico W e as semilarguras da distribuição gaussiana de estados sigma mostrando que o comprimento de conjugação, a ordem e a cristalinidade foram aprimoradas nas blendas rrP3HT:PMMA. Medidas J-V e CELIV mostraram que simples diodos baseados nas blendas rrP3HT:PMMA 70:30 exibem valores de mobilidade de portadores maiores (1.0x10 elevado a menos quatro até 5.5x10 elevado a menos quatro centimetro quadrado/Vs), com um aumento de até 450 porcento quando comparados com o valor da mobilidade do rrP3HT puro. Células fotovoltaicas foram fabricadas para avaliar o desempenho da blenda 70:30 apresentando um valor de eficiência 6 vezes maior em relação aos dispositivos baseados em rrP3HT puro. Por outro lado, o estudo da modificação química mostrou altos valores de acoplamento excitônico para os polímeros rrP3HTCoSe de 5 e 10 porcento, o que significa menores comprimentos de conjugação, ordem e cristalinidade. Os valores de mobilidade encontrados nos polímeros rrP3HTCoSe 5 e 10 porcento foram inferiores com relação ao rrP3HT puro, encontrando uma relação direta entre a energia do gap, o comprimento de conjugação e mobilidade de portadores de carga. / [en] This work presents the study of charge carrier mobility in thin films of poly(3-hexylthiphene) rrP3HT modified: (a) physically, through the mixing the rrP3HT with polymethylmethacrylate PMMA with different solvents and concentrations and (b) chemically, through the syntheses of new polymers based on polythiophene and polyselenophene rrP3HTCoSe 5 and 10 percent of Se. All the films produced were characterized by UV-Vis absorption, photoluminescence and infrared absorption measurements. For the rrP3HT:PMMA blends, from these spectra and using the Spano model were determined excitonic bandwidth values W(eV) and half width of the Gaussian distribution of site-energy disorder sigma (eV) showing that the conjugation length, order and crystallinity were improved in rrP3HT:PMMA blends. J-V and CELIV measurements showed that the simples diodes based in rrP3HT:PMMA 70:30 with different solvents showed the highest mobility (1.00x10 to negative 4 power to 5.55x10 to negative 4 power centimeter square/Vs), with an increase of up to 450 percent compared with the value of mobility of rrP3HT pure. Photovoltaic cells were fabricated to evaluated the performance of the blend 70:30 presenting a value conversion efficiency 6 times higher compared to devices based rrP3HT pure. On the other hand, the study of chemical modification showed high values of excitonic bandwidth for the rrP3HTCoSe polymers 5 and 10 percent, which means smaller conjugation lengths, order and crystallinity. The mobility values found in rrP3HTCoSe polymers 5 and 10 percent were lower with respect to rrP3HT pure, finding a direct relationship between Eg, the conjugation length and mobility of charge carriers.

This diploma thesis describes synthetic approach and characterization of advanced molecules with implemented adamantane skeleton and perspective use in attractive field of organic electronics. Three of four prepared molecules based on para-bis(2-thienyl)phenylene are original and totally new, and there were performed different synthetic approaches with comparison of yield, ecological and financial impact. Study of microwave synthetic approach was provided for cross-coupling reactions on para-bis(2-thienyl)phenylene skeleton. For all molecules were used ethyladamantyl and methyladamantyl substituents. Also, two completely new molecules based on 2,2':5',2''-terthiophene with ethyladamantyl and methyladamantyl substituents were prepared. In the next part were prepared new dimer structures of adamantane with possible application on field of polymers as bridge molecules. In the thesis were also made series of experiments for preparation of tetrasubstituted adamantane molecules, and for optimisation of preparation of spiroadamantane systems.

In traditional electronics, inorganic materials such as silicon and germanium are used as semiconductors due to their outstanding semiconducting properties. Unfortunately, inorganic materials are rigid due to their high crystalline nature, and processing these materials is complex and expensive. Furthermore, traditional semiconducting materials do not have favorable mechanical properties in applications such as wearable devices and large-area applications with complicated shapes. Conjugated conducting polymers (CCPs) are being explored as alternative materials to conventional semiconductors due to their mechanical properties and high conductivity. CCPs offer properties such as solution and low-temperature processability, flexibility, thermal and optical properties that traditional semiconductors could not provide. These characteristics are essential in Organic Light-Emitting Diodes (OLEDs), Organic Field-Effect Transistors (OFETs), and Photovoltaic (PVs) devices. This dissertation focuses on synthesizing rhodamine- and diketopyrrolopyrrole- containing CCPs. Chapter I focuses on the synthesis, and characterization of polyrhodamine (PRho), a semiconducting conjugated polymer containing the rhodamine core in the polymer’s backbone. PRho was synthesized by the Buchwald-Hartwig polycondensation and characterized for its optical and electrochemical properties. We have discovered that the polymer is electrochemically reversible and stable up to 1000 cycles as recorded by cyclic voltammetry between -0.4 and 1.0 V vs. Ag/AgCl and stable to extreme acidic and basic conditions without noticeable degradation. Remarkably, the polymer has a conductivity in the semiconductor range of 8.38 x 10-2 S cm–1 when treated with 20% HCl. Chapter II focuses on the synthesis and characterization of four different alkenyl flanked diketopyrrolopyrrole (DPP) polymers ( PDPPVTV, PDPPVTT, PDPPV3T, and PDPPV4T) synthesized via Stille polycondensation. Different pi-conjugated segments (alkenyl/ PDPPVTV, thiophene/ PDPPVTT, thienothiophene/ PDPPV3T, and dithienothiophene/ PDPPV4T) were used to tune the optoelectrical properties of the polymers. The effect of the alkenyl groups and different pi-conjugated segments on the optoelectrical and charge mobility properties were determined by UV/visible spectroscopy, cyclic voltammetry, and FET characteristics. Three of the four polymers, except PPP4T, showed good solubility in chloroform. All the polymers showed high thermal stabilities in TGA and semi-crystalline nature in X-Ray diffraction patterns. PDPPVTV and PDPPVTT exhibited hole mobilities of 1.8 x 10-3 cm2 V-1 s-1 and 0.25 cm2 V-1 s-1, respectively. .