[pt] Nos últimos anos, polímeros conjugados ganharam muita atenção na eletrônica orgânica por seu uso na fabricação de dispositivos flexíveis e de baixo custo. Como resultado, diferentes tipos de dispositivos têm sido desenvolvidos como: diodos emissores de luz orgânicos (OLEDs), células fotovoltaicas orgânicas (OPVs) e transistores de efeito de campo orgânicos (OFETs). Em particular, para os OFETs seu desempenho depende da interface isolante/semicondutor, principalmente, devido ao acúmulo de portadores de carga. Além disso, as propriedades da interface afetam fortemente o transporte de carga através do canal de dispositivo. Por estas razões, a pesquisa de novos polímeros semicondutores e novos materiais dielétricos é um fator chave para aprimorar o desempenho dos dispositivos. Neste trabalho, os polímeros PMMA, PVA, FORMVAR e PU foram investigados como materiais dielétricos. Inicialmente foram fabricados capacitores de placas planas paralelas do tipo ITO/dielétrico/Al para determinar a constante dielétrica dos isolantes, as curvas JxV e a capacidade por unidade de área. Desenvolveu-se OFETs tipo Top-Gate/Bottom-Contacts (TGBC) com a estrutura Au/P3HT/PMMA/Ag e Au/P3HT/PU/Ag. No trabalho, a espessura dos dielétricos foi variada para aprimorar o desempenho dos dispositivos. Para os OFETs de PMMA obteve-se resultados concordantes com os da literatura. Os novos OFETs de PU apresentaram tensões de operação menores que 5V, que é um requisito para a integração destes OFETs em aplicações da eletrônica orgânica. A mobilidade obtida nestes OFETs de PU foi de 1.25 cm(2)/V.s, com uma tensão limiar de 0.02 e uma razão On/Off de 100. / [en] In the last years, conjugated polymers have received much attention in organic electronics for their use in the fabrication of low cost and flexible devices. As a result, different types of devices have been developed e.g. organic light emitting diodes (OLEDs), photovoltaic devices (OPVs) and field effect transistors (OFETs). For the OFETs in particular, their performance depends primarily on insulator/semiconductor interface, mainly due to charge carrier accumulation. Moreover, the interface properties strongly affect the charge transport through the device channel. For these reasons, the research for new semiconductor polymers and new dielectric materials is key to advancing the performance improvement of devices. In this work, the polymers PMMA, PVA, FORMVAR and PU were used as dielectric materials. Initially, parallel plate capacitors of the structure ITO/dielectric/A1 were made, in order to determine the dielectric constant of the insulators, get the curves JxV and the capacity per unit area. It was used to develop Top-Gate/Bottom-Contacts (TGBC) OFETs with structures of Au/P3HT/PMMA/Ag and Au/P3HT/PU/Ag. The thicknesses of the dielectric materials were varied to improve the performance of the devices. For the PMMA OFETs, the results obtained were concordant with those of the existing literature. The new PU OFETs presented with operating voltages of less than 5V, appropriate for applications of these OFETs in organic electronics. The mobility of the PU OFETs was 1.25cm(2)/V.s, the threshold voltage 0.02V and the On/Off ratio 100.

Die enormen Fortschritte im Bereich der organischen Elektronik in den letzten Jahrzehnten haben zur Entwicklung effizienter optoelektronischer Bauelemente geführt wie z. B. organische Leuchtdioden (OLEDs), organische Feldeffekttransistoren (OFETs) und organische Photovoltaikzellen (OPV). Darüber hinaus ermöglichen halbleitende Polymere die Herstellung kostengünstiger, großflächiger elektronischer Bauelemente mit Hilfe von Niedertemperatur Lösungsverfahren auf flexiblen Substraten. Der erste Teil dieser Arbeit befasste sich mit der Entwicklung von Host-Materialien für die emittierende Schicht (EML) von OLEDs. Effiziente Host-Materialien sollten bestimmte Eigenschaften aufweisen, z. B. eine hohe Triplett-Energie, einen hohen und ausgeglichenen Ladungsträgertransport, geeignete Grenzorbitalniveaus, die mit denen der Nachbarschichten übereinstimmen, und morphologische Stabilität. Zu diesem Zweck wurden Polymere auf Carbazolbasis mit einer elektronenziehenden Gruppe (EWG) an verschiedenen Stellen der Kette entworfen und durch Suzuki Kupplung synthetisiert. Die Polymere wurden chemisch und optisch charakterisiert, bevor sie nach Dotierung mit Tris(2-phenylpyridin)iridium(III) (Ir(ppy)3) in eine funktionierende grüne OLED eingebaut wurden. Zusätzlich wurden die Ladungstransporteigenschaften durch die Herstellung von Einzelträgergeräte untersucht. Der zweite Teil widmete sich der Herstellung von Halbleitermaterialien für OFET Anwendungen. Nach einem neuartigen Moleküldesign wurde eine Reihe von Verbindungen auf der Basis von Diketopyrrolopyrrol (DPP) und Thiophen durch Stille-Kupplung und phosphinfreie direkte Heteroarylierung synthetisiert. Dieses molekulare Design erwies sich als flexibel für die Synthese neuartiger Derivate durch Modifikation der Endgruppen. Die Korrelation zwischen Struktur und Morphologie wurde ebenfalls untersucht. Die Mobilität der Ladungsträger, welche von der chemischen Struktur und Morphologie des Halbleiters beeinflusst wird, ist einer der wichtigsten Parameter eines OFET. Daher wurden die erhaltenen Materialien mit niedriger Bandlücke in Transistoren verschiedener Architekturen integriert, die durch Lösungsverfahren wie Spin-Coating und Scherbeschichtung hergestellt wurden. Die Mobilität sowie andere OFET-Parameter wurden im p- und n-Typ-Betrieb gemessen.:1 Theoretical background 1.1 Introduction 1.2 Organic semiconductors 1.3 Organic Light Emitting Diodes 1.3.1 Physics of OLEDs 1.3.2 Solution processable OLEDs 1.3.3 Polymer Light-Emitting Diodes 1.4 Organic Field-Effect Transistors 1.4.1 Device operation 1.4.2 Ambipolar transistors 1.5 Synthesis of π-conjugated polymers 1.6 Characterisation methods 1.6.1 Chemical structure characterisation 1.6.2 Optical characterisation 1.6.3 Morphology and microstructure 2 Motivation and aim 3 Results and discussion 3.1 Polymers for ambipolar semiconductors 3.1.1 Molecular design 3.1.2 (N-carbazole)triphenylphosphine oxide polymers 3.1.3 Bis(carbazol-3-yl)triphenylphosphine oxide polymers 3.1.4 ((Carbazol-3-yl)phenoxy)hexyl diphenylphosphinate polymers 3.1.5 ((Phenothiazin-10-yl)phenyl)diphenylphosphine oxide polymers 3.1.6 Device integration 3.1.7 Summary 3.2 DPP based molecules for OFETs 3.2.1 Molecular design 3.2.2 DBT-I series 3.2.3 DBT-II 3.2.4 Device integration 3.2.5 Summary 4 Conclusions and outlook 5 Experimental part 6 Supporting Information 7 Bibliography / Staggering progress in the field of organic electronics over the past decades has led to the development of efficient optoelectronic devices, such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs)and organic photovoltaic cells (OPV). Moreover, semiconducting polymers enable the fabrication of low-cost, large-area electronic devices using low-temperature solution-processing methodologies on flexible substrates. The first part of this thesis focused on the development of host materials for the emitting layer (EML) of an OLED. Efficient hosts should possess a number of properties, such as high triplet energy, good and balanced charge-carrier transport, suitable frontier orbital levels that match those of the neighbouring layers, and morphological stability. To this end, carbazole-based polymers featuring an electron-withdrawing group (EWG) at different positions of the chain were designed and synthesised by Suzuki coupling. Chemical and optical characterisations of the polymers were performed prior to their incorporation into a functioning green OLED upon doping with tris(2-phenylpyridine)iridium(III) (Ir(ppy)3). Additionally, the charge-transport properties were studied through the fabrication of single-carrier devices. The second part was dedicated to the production of semiconductor materials for OFET applications. Following a novel molecular design, a series of compounds based on diketopyrrolopyrrole (DPP) and thiophene were synthesised by Stille coupling and phosphine-free direct heteroarylation. This molecular design was proven to be flexible for the synthesis of novel derivatives by modification of the end-groups. The correlation between structure and morphology was also studied. Mobility, influenced by the chemical structure and morphology of the semiconductor, is one of the most important parameters of an OFET. Thus, the obtained low bandgap materials were integrated into devices of different architectures, fabricated by solution processing methodologies, such as spin coating and shear coating, and the mobility, as well as other OFET parameters, were measured in p- and n-type operation.:1 Theoretical background 1.1 Introduction 1.2 Organic semiconductors 1.3 Organic Light Emitting Diodes 1.3.1 Physics of OLEDs 1.3.2 Solution processable OLEDs 1.3.3 Polymer Light-Emitting Diodes 1.4 Organic Field-Effect Transistors 1.4.1 Device operation 1.4.2 Ambipolar transistors 1.5 Synthesis of π-conjugated polymers 1.6 Characterisation methods 1.6.1 Chemical structure characterisation 1.6.2 Optical characterisation 1.6.3 Morphology and microstructure 2 Motivation and aim 3 Results and discussion 3.1 Polymers for ambipolar semiconductors 3.1.1 Molecular design 3.1.2 (N-carbazole)triphenylphosphine oxide polymers 3.1.3 Bis(carbazol-3-yl)triphenylphosphine oxide polymers 3.1.4 ((Carbazol-3-yl)phenoxy)hexyl diphenylphosphinate polymers 3.1.5 ((Phenothiazin-10-yl)phenyl)diphenylphosphine oxide polymers 3.1.6 Device integration 3.1.7 Summary 3.2 DPP based molecules for OFETs 3.2.1 Molecular design 3.2.2 DBT-I series 3.2.3 DBT-II 3.2.4 Device integration 3.2.5 Summary 4 Conclusions and outlook 5 Experimental part 6 Supporting Information 7 Bibliography

Diese Arbeit befasst sich mit der Synthese und Charakterisierung von organolöslichen Thiophen und Benzodithiophen basierten Materialien und ihrer Anwendung als aktive lochleitende Halbleiterschichten in Feldeffekttransistoren. Im ersten Teil der Arbeit wird durch eine gezielte Modifikation des Thiophengrundgerüstes eine neue Comonomer-Einheit für die Synthese von Thiophen basierten Copolymeren erfolgreich dargestellt. Die hydrophoben Hexylgruppen in der 3-Position des Thiophens werden teilweise durch hydrophile 3,6-Dioxaheptylgruppen ersetzt. Über die Grignard-Metathese nach McCullough werden statistische Copolymere mit unterschiedlichen molaren Anteilen vom hydrophoben Hexyl- und hydrophilem 3,6-Dioxaheptylgruppen 1:1 (P-1), 1:2 (P-2) und 2:1 (P-3) erfolgreich hergestellt. Auch die Synthese eines definierten Blockcopolymers BP-1 durch sequentielle Addition der Comonomere wird realisiert. Optische und elektrochemische Eigenschaften der neuartigen Copolymere sind vergleichbar mit P3HT. Mit allen Copolymeren wird ein charakteristisches Transistorverhalten in einem Top-Gate/Bottom-Kontakt-Aufbau erhalten. Dabei werden mit P-1 als die aktive Halbleiterschicht im Bauteil, PMMA als Dielektrikum und Silber als Gate-Elektrode Mobilitäten von bis zu 10-2 cm2/Vs erzielt. Als Folge der optimierten Grenzfläche zwischen Dielektrikum und Halbleiter wird eine Verbesserung der Luftstabilität der Transistoren über mehrere Monate festgestellt. Im zweiten Teil der Arbeit werden Benzodithiophen basierte organische Materialien hergestellt. Für die Synthese der neuartigen Benzodithiophen-Derivate wird die Schlüsselverbindung TIPS-BDT in guter Ausbeute dargestellt. Die Difunktionalisierung von TIPS-BDT in den 2,6-Positionen über eine elektrophile Substitution liefert die gewünschten Dibrom- und Distannylmonomere. Zunächst werden über die Stille-Reaktion alternierende Copolymere mit alkylierten Fluoren- und Chinoxalin-Einheiten realisiert. Alle Copolymere zeichnen sich durch eine gute Löslichkeit in gängigen organischen Lösungsmitteln, hohe thermische Stabilität und durch gute Filmbildungseigenschaften aus. Des Weiteren sind alle Copolymere mit HOMO Lagen höher als -6.3 eV, verglichen mit den Thiophen basierten Copolymeren (P-1 bis P-3), sehr oxidationsstabil. Diese Copolymere zeigen amorphes Verhalten in den Halbleiterschichten in OFETs auf und es werden Mobilitäten bis zu 10-4 cm2/Vs erreicht. Eine Abhängigkeit der Bauteil-Leistung von dem Zinngehalt-Rest im Polymer wird nachgewiesen. Ein Zinngehalt von über 0.6 % kann enormen Einfluss auf die Mobilität ausüben, da die funktionellen SnMe3-Gruppen als Fallenzustände wirken können. Alternativ wird das alternierende TIPS-BDT/Fluoren-Copolymer P-5-Stille nach der Suzuki-Methode polymerisiert. Mit P-5-Suzuki als die aktive organische Halbleiterschicht im OFET wird die höchste Mobilität von 10-2 cm2/Vs erzielt. Diese Mobilität ist somit um zwei Größenordnungen höher als bei P-5-Stille, da die Fallenzustände in diesem Fall minimiert werden und folglich der Ladungstransport verbessert wird. Sowohl das Homopolymer P-12 als auch das Copolymer mit dem aromatischen Akzeptor Benzothiadiazol P-9 führen zu schwerlöslichen Polymeren. Aus diesem Grund werden einerseits Terpolymere aus TIPS-BDT/Fluoren/BTD-Einheiten P-10 und P-11 aufgebaut und andererseits wird versucht die TIPS-BDT-Einheit in die Seitenkette des Styrols einzubringen. Mit der Einführung von BTD in die Hauptpolymerkette werden insbesondere die Absorptions- und die elektrochemischen Eigenschaften beeinflusst. Im Vergleich zu dem TIPS-BDT/Fluoren-Copolymer reicht die Absorption bis in den sichtbaren Bereich und die LUMO Lage wird zu niederen Werten verschoben. Eine Verbesserung der Leistung in den Bauteilen wird jedoch nicht festgestellt. Die erfolgreiche erstmalige Synthese von TIPS-BDT als Seitenkettenpolymer an Styrol P-13 führt zu einem löslichen und amorphen Polymer mit vergleichbaren Mobilitäten von Styrol basierten Polymeren (µ = 10-5 cm2/Vs) im OFET. Ein weiteres Ziel dieser Arbeit ist die Synthese von niedermolekularen organolöslichen Benzodithiophen-Derivaten. Über Suzuki- und Stille-Reaktionen ist es erstmals möglich, verschiedenartige Aromaten über eine σ-Bindung an TIPS-BDT in den 2,6-Positionen zu knüpfen. Die UV/VIS-Untersuchungen zeigen, dass die Absorption durch die Verlängerung der π-Konjugationslänge zu höheren Wellenlängen verschoben wird. Darüber hinaus ist es möglich, thermisch vernetzbare Gruppen wie Allyloxy in das Molekülgerüst einzubauen. Das Einführen von F-Atomen in das Molekülgerüst resultiert in einer verstärkten Packungsordnung im Fluorbenzen funktionalisiertem TIPS-BDT (SM-4) im Festkörper mit sehr guten elektronischen Eigenschaften im OFET, wobei Mobilitäten bis zu 0.09 cm2/Vs erreicht werden. / This work describes the synthesis and characterization of organo-soluble thiophene and benzodithiophene based materials and their application as hole-transporting active semiconductor layers in field effect transistors. The first part of this work introduces the targeted modification of the thiophene base unit, obtaining new comonomers for the corresponding copolymers. The hydrophobic hexyl groups in the 3-position of thiophene are partially replaced by hydrophilic 3,6-Dioxaheptyl groups. Using the Grignard metathesis developed by McCullough, statistical copolymers with different molar ratios of hydrophobic and hydrophilic side groups 1:1 (P-1), 1:2 (P-2) and 2:1 (P-3) are synthesized. Furthermore a defined blockcopolymer is synthesized by a sequential comonomer addition. Optical and electrochemical properties of the novel copolymers are comparable to the homopolymer P3HT. All copolymers show clearly transistor characteristics in a top-gate/bottom-contact configuration. Devices with P-1 as active semiconductor layer, PMMA as dielectric and silver as the gate electrode show mobilities up to 10-2 cm2/Vs. As a result of the optimized semiconductor and dielectric interface an improvement of the air stability of the transistors is observed for several months. The second part describes the synthesis of benzodithiophene based organic materials. For the synthesis of the novel benzodithiophene-derivatives the key intermediate TIPS-BDT is obtained in high yields. A difunctionalization of TIPS-BDT in 2,6-position is observed by electrophilic substitution reactions and provided the desired dibromo- and distannyl-monomers. Via Stille-reaction alternated copolymers with alkylated fluorene and quinoxaline groups are synthesized. All copolymers are soluble in common organic solvents, show high thermal stability and good film forming properties. Furthermore all copolymers have HOMO values above -6.3 eV and are more oxidation stable compared to the thiophene based copolymers (P-1 up to P-3). These copolymers show an amorphous behavior as semiconductor layer in OFETs and mobilities up to 10-4 cm2/Vs are observed. A correlation between the device performance and the tin amount in the polymer could be demonstrated. Hence the functional SnMe3 groups can act as traps, a tin amount higher than 0.6 % can negatively influence the mobility. Alternatively the alternated TIPS-BDT/Fluoren-copolymer P-5-Stille is polymerized by the Suzuki-Method. The highest mobility of 10-2 cm2/Vs is obtained with P-5-Suzuki as active semiconductor layer in OFET. In comparison to P-5-Stille this mobility is two orders of magnitude higher, because in P-5-Suzuki traps are minimized and the charge transfer is improved. The synthesis of homopolymer P-12 as well as the copolymer with aromatic benzothiadiazole P-9 resulted in insoluble polymers. For this reason terpolymers containing TIPS-BDT/Fluoren/BTD units are designed. Additionally an attempt has been made to introduce the TIPS-BDT unit in the side chain of styrene. The introduction of BTD in the conjugated main chain influences especially the absorption and electrochemical properties. Compared to TIPS-BDT/Fluoren-copolymer the absorption of the terpolymer is shifted to the visible region and the LUMO values decreased. An improvement in the device performance is not observed. A side chain polystyrene containing TIPS-BDT P-13 is synthesized successfully. The amorphous and soluble P-13 showed comparable mobilities (µ = 10-5 cm2/Vs) as known styrene based polymers. A further aim of this work is the synthesis of organo-soluble benzodithiophene based small molecules. Using Suzuki- and Stille-reactions different aromatic cores as endcappers are connected by σ-bonds at the 2,6-position of TIPS-BDT. UV/VIS-measurements show a red-shift of the absorption maxima with extension of the π-conjugated system. Furthermore it is possible to introduce thermal cross linkable allyloxy-groups. The F-atoms in the molecule lead to stronger intermolecular interactions in the solid state, which improves the electronic properties and lead to high mobilities up to 0.09 cm2/Vs for TIPS-BDT (SM-4).

[pt] Este trabalho teve como objetivo fabricar e caracterizar Transistores Orgânicos Emissores de Luz (OLETs, Organic light-Emitting Transistors). Os OLETs combinam em um único dispositivo a funcionalidade elétrica de um transistor de efeito de campo orgânico e a capacidade de geração de luz, representando uma nova classe de dispositivos orgânicos com alto potencial de inovação em aplicações, como sistemas ópticos de comunicação, tecnologia de displays avançada, lasers orgânicos, fontes de luz em nanoescala e optoeletrônica orgânica integrada. Portanto, esta tese possui um caráter pioneiro, tanto para grupo de pesquisa quanto para o país, uma vez que ocorre a junção dos conhecimentos e domínio adquiridos sobre OFETs e OLEDs. Efetivamente, este trabalho de doutorado consistiu na fabricação e caracterização sistemática de diversos dispositivos OLET utilizando variadas arquiteturas e diversos materiais, comerciais e não comerciais, como o NT4N, o P13 e uma bicamada de C8-BTBT com TcTa:Ir(ppy)3. Os dispositivos foram caracterizados através de medidas elétricas e óticas, obtendo-se as curvas características. Também foram determinados seus parâmetros e propriedades de funcionamento, com destaque para as mobilidades de carga e para as eficiências obtidas. Houve também o entendimento e a implementação de um tratamento térmico na camada dielétrica, sendo parte fundamental da fabricação dos dispositivos. Os dispositivos fabricados apresentaram diferentes graus de desempenho, com destaque para a arquitetura bicamada, por apresentar a maior potência luminosa (4 microwatt) e a maior eficiência (0,5 por cento), sendo suficientes para inserir os dispositivos fabricados na categoria de dispositivos orgânicos altamente eficientes. Tal fato demonstra que o domínio da fabricação e da caracterização desta nova classe de dispositivos foi alcançado. / [en] The aim of this work was to achieve the knowledge of the fabrication and the characterization of Organic Light Emitting Transistors, OLETs, considered as one of the innovative technologies nowadays. The OLETs combine in a single device the electrical functionality of an organic field-effect transistor (OFET) and the light-generating capability. They represent a promising new class of organic devices with high potential for innovation in applications such as communication systems, advanced display technology, organic lasers, nanoscale light sources and integrated organic optoelectronics. In some way, this thesis has a pioneer character, both for our research group and for the country, since it combines different knowledge and skills about OFETs and OLEDs to achieve a new device. Actually, this work involved the systematic manufacture and characterization of several OLETs using different architectures employing commercial and noncommercial materials, such NT4N, P13 and a bilayer of C8-BTBT with TcTa:Ir(ppy)3. The devices were then characterized by electrical and optical measurements. The working parameters and properties were determined as well, highlighting the charge carrier mobilities and efficiencies obtained. The understanding and the implementation of a specific heat treatment in the dielectric layer was a fundamental part of this work for the manufacture of the devices which have different degrees of performance. With emphasis on the bilayer architecture, that presented the highest luminous power (4 microwatt) and efficiency (0,5 percent), inserting the devices manufactured in the category of highly efficient organic devices. Such fact shows that the fabrication and characterization of this new class of devices has been achieved.

The creation of organic electronics is not only an attractive replacement for amorphous silicon devices, but offers the ability to produce novel technologies such as flexible displays and chemical or biological sensors. Control of the semiconducting film for such devices is of great importance. The fabrication of monolayer devices of a high performance offer a desirable way of creating high sensitivity sensors. Achieving a high level of performance for ultra-thin and monolayer devices, where the charge transport layer is effectively the thickness of the film, requires the careful control of deposition conditions. Thin films of the molecule 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (PTTP) were investigated with respect to their crystal structure, growth dynamics and device performance. Optimised conditions led to the highest reported performance for PTTP, to the best of our knowledge, with mobilities greater than 0.1 cm2V-1s-1. These results allowed the creation of monolayer and multilayer devices, resulting in a saturation thickness of approximately 2.1 monolayers, where the bulk performance was reached. This confirmed the presence of the conduction channel within the first few monolayers and could potentially lead to an optimised device for chemical or biological sensing. The development of a solution processed method for creating monlayers of PTTP was also investigated. Creating a compound with the ability to self assemble on a surface, allowing a controlled monolayer to form, involved the use of a trichlorosilane anchoring group attached to a PTTP core by an alkyl spacer. Solution processed self assembled monolayer field effect transistors (SAMFETs) were formed in less than 10 hours, reaching mobilities as high as 1.7 X 10-2 cm2V-1s-1 . This simple method for creating transistors could further the use of monolayer devices in sensing applications and integrated circuits. Furthermore, the development of solution processed PTTP was undertaken. By blending the small molecule with the insulating polymer PMMA, phase separation of the components led to the creation of thin, crystalline films of PTTP. Working devices were fabricated that required as little as 0.05 \% w/v of the small molecule. This attractive method, of reducing the required material and combination of both insulating and semiconducting components, is a versatile approach to greatly simplify the device processing steps required.

elementares da eletrônica orgânica, vêm sendo desenvolvidos e integrados para realização de dispositivos eletrônicos de baixo custo, alto volume e flexíveis. Nesta tese foi proposta uma tecnologia para a construção de OFETs sobre substrato flexível e a caracterização destes dispositivos foi feita. Transistores com diferentes comprimentos de canal (L= 5, 10, 20 e 40 μm) foram construídos e avaliados. As características e configuração do poli (álcool vinílico) (PVA) como dielétrico de porta foram definidas através da otimização da reticulação, grau de hidrólise e peso molecular. O PVA utilizado como dielétrico de porta foi de alto peso molecular, hidrolização incompleta e reticulado com dicromato de amônia. O desafio de compatibilização entre os filmes de PVA e poli (3-hexiltiofeno) (P3HT) com diferentes polaridades foi superado e abriu caminho para construção de OFETs e capacitores, estes últimos usados para extrair a capacitância por unidade de área do conjunto PVA-P3HT. Os processos desenvolvidos de fotolitografia e de oxidação por plasma de oxigênio possibilitaram a construção de transistores flexíveis inéditos de Ni-P3HT-PVA-Al com uma arquitetura top-gate, bottom-contacts. Os transistores apresentaram boas características de saída, baixa tensão de operação (< |-6 V|), boa mobilidade (0,015 cm2/V*s) e razões ION/IOFF aceitáveis (~300). A resistência de contato e mobilidade efetiva foram obtidas através do método de linhas de transmissão. Uma boa estabilidade temporal foi atingida, porém ocorreram instabilidades na operação quando os transistores foram testados. A corrente do transistor não se manteve estável, primeiramente aumentou e depois diminuiu com a realização de sucessivas medidas. As razões deste comportamento foram discutidas. Inversores foram demonstrados e caracterizados. O aperfeiçoamento da tecnologia desenvolvida possibilitará a construção de circuitos orgânicos analógicos e digitais para aplicações cotidianas que demandem baixo custo e alto volume. / Organic field effect transistors (OFETs), the elementary components of organic electronics, are constantly developed and integrated to realize low cost, high volume, flexible electronic devices. In this thesis a technology for creating OFETs on flexible substrates is proposed and their characterization is performed. Flexible transistors with different channel lengths (L= 5, 10, 20 and 40 μm) were built and evaluated. The characteristics and configurations of the poly (vinyl alcohol) (PVA) as gate dielectric were defined through the optimization of crosslinking, the degree of hydrolysis and the molecular weight. The chosen PVA is cross-linked with ammonium dichromate, has a high molecular weight and incomplete hydrolization. The challenge of integrating polymers of different polarities: PVA and poly (3-hexyl thiophene) (P3HT), the chosen organic semiconductor, was overcome and opened a path to the construction of OFETs and capacitors. From the later capacitance per unit area was extracted. The developed processes of photolithography and oxygen plasma etching allowed the construction of unprecedented Ni-P3HT-PVA-Al flexible top-gate, bottomcontacts transistors. The transistors showed good output characteristics, low operation voltages (< |-6 V|), acceptable carrier mobilities (0,015 cm2/V*s) and ION/IOFF fractions (~300). Contact resistance and effective mobility were extracted through transmission line method. The transistors showed great temporal stability, but when operated instabilities occurred. The transistor output current first increased and later degraded with successive testing. Organic PMIS inverters were demonstrated and characterized. The optimization of this technology may lead to construction of flexible logic organic devices for everyday applications.

La preparació de dispositius moleculars amb aplicacions específiques ha atret una gran atenció durant aquests darrers anys, ja que aquests poden oferir nous avantatges respecte la tecnologia basada en l'òxid de silici. Sovint, per la preparació dels dispositius és necessari dipositar les molècules o material sobre un suport sòlid adequat. L'ordenament i l'empaquetament de les molècules són aspectes crucials per la operació del dispositiu i, per tant, és molt important tenir un bon control de com el dissolvent, el substrat i la funcionalització molecular influeixen en les organitzacions moleculars resultants i en les interaccions intermoleculars. En aquesta Tesi s'han estudiat les organitzacions de dues famílies d'espècies electroactives, els tetratiafulvalens (TTFs) i els radicals policlorotrifenilmetílics (PTMs), que s'han utilitzat per la preparació de transistors orgànics d'efecte de camp (OFETs) i interruptors moleculars, respectivament. Els OFETs estan inclosos dintre del que es coneix com l'electrònica dels plàstics. Alguns derivats de TTFs posseeixen unes característiques electròniques i estructurals apropiades per ser utilitzats com a semiconductors orgànics per OFETs. En aquesta Tesi es descriuen els principals resultats obtinguts en la síntesi i estudi de les propietats elèctriques com a OFETs dels derivats de TTF ditiofetetratiafulvalè (DT-TTF) i el dibenzotetratiafulvalè (DB-TTF). OFETs basats en cristalls que han estat processats a partir de solució, han donat mobilitats molt altes d'1 i 3.65 cm2/Vs, pel DB-TTF i el DT-TTF, respectivament. S'han preparat pel·lícules altament ordenades del DT-TTF utilitzant la tècnica de Zone Casting, i s'han obtingut mobilitats de l'ordre del silici amorf i, per tant, amplien la possibilitat d'utilizar-los en l'electrònica de baix cost.Ja que la miniaturització dels dispositius és un dels principals objectius de l'electrònica molecular, la possibilitat de fabricar-los amb un nombre reduït de molècules és una aproximació molt atractiva. Amb aquesta finalitat, s'han preparat monocapes auto-assemblades (SAMs) basades en radicals PTM. Aquestes compostos són espècies multifuncionals ja que combinen propietats òptiques, magnètiques i electroquímiques. Les SAMs s'han preparat sobre substrats derivats del SiO2 i Au. S'ha demostrat el comportament com a interruptor molecular (químic i electroquímic) dels substrats funcionalitzats amb radicals PTM i s'ha utilitzat la resposta òptica o magnètica per llegir l'estat de l'interruptor. D'altra banda, també s'ha estudiat per microscòpia de força atòmica (AFM) i microscòpia d'efecte túnel (STM) el tipus d'organització que formen alguns derivats de TTF i PTM fisisorbits sobre substrats de diferent naturalesa (grafit, mica i SiO2). L'auto-assemblatge sobre grafit d'un derivat de radical PTM funcionalitzat amb tres cadenes alquíliques llargues ha donat lloc a la formació d'estructures tipus fibril·lars altament ordenades, formades per files magnètiques separades per les cadenes alquíliques, que actuen com a barreres diamagnètiques. En el cas dels TTFs, s'ha estudiat l'organització bi i tridimensional del tricarbometoxitetratiafulvalè (TCM-TTF). S'ha observat que les interaccions molècula-molècula, molècula-substrat i molècula-dissolvent tenen un paper molt important en l'organització resultant, formant-se des de capes fins a fibres moleculars. / The construction of molecular devices with specific applications has attracted a great deal of attention in recent years since they can offer new advantages to well-established silicon-based technologies. Often, to construct a molecular device it is necessary to deposit molecules or material on a suitable substrate. Since the ordering and packing of the molecules are crucial aspects for the operation of the device, it is important to have good control of how solvent, substrate or molecular funcionalitzation influences on the resulting molecular assemblies and the intermolecular interactions. In this Thesis we have studied the organizations of two families of electroactive molecules, tetrathiafulvalenes (TTFs) and polychlorotriphenylmethyl (PTM) radicals, which have been used as the active components of Organic Field Effect Transistors (OFETs) and molecular switches, respectively.OFETs are included in the field of Plastic Electronics. Some TTF derivatives have appropriate structural and electronic characteristics to be used as organic semiconductors in OFETs. The main results related to the synthesis and the electrical properties as OFETs of the dithiophene-tetrathiafulvalene (DT-TTF) and dibenzo-tetrathiafulvalene (DB-TTF) are described in this Thesis. OFETs based on single crystals obtained from solution of these synthesized compounds have resulted in mobilities of 1 cm2/Vs and 3.6 cm2/Vs, for DB-TTF and DT-TTF, respectively, being the later the highest mobility reported for solution-processed devices. Highly ordered films based on DT-TTF were prepared by Zone Casting exhibiting also high mobilities, of the order of 0.2 cm2/Vs. Thus, this technique offers a promising approach to obtain low-cost devices with large area coverage. Since the miniaturization of the devices is one of the main aim in the field of molecular electronics, the possibility to fabricate a device with a small group of molecules is a very attractive approach. With this purpose, self-assembled monolayers (SAMs) based on PTM radicals have been prepared. These are multifunctional species that combine optical, magnetic and electrochemical properties. SAMs of PTM radicals have been formed on silicon dioxide-based substrates and gold. It has been demonstrated that the resulting functionalized substrates can be used as molecular switches (chemical and electrochemical), using the optical and magnetic response to read the status of the switch. We have also studied by AFM and STM the self-assembly of some TTFs and PTMs derivatives physisorbed on surface. A new PTM radical bearing long alkyl chains was synthesized and its self-assembly on graphite was studied by STM at the liquid-solid interface. The self-assembly of this PTM radical gave highly-ordered structures composed by magnetic double rows, formed by the PTM cores, separated by the alkyl chains that act as insulating diamagnetic barriers and determine the spacing between the rows. On the other hand, we have studied the organization of the tetra(carbometoxy)-tetrathiafulvalene (TCM-TTF) and it was observed that depending on the combination of the two main parameters (solvent and substrate) the resulting two-dimensional assemblies can be completely different, ranging from molecular layers to long molecular fibers.

The objective of this work is to understand how the thin film characteristics of p-type organic and polymer semiconductors affect their electronic properties in microelectronic applications. To achieve this goal, three main objectives were drawn out: (1) to create single-crystal organic field-effect transistors and measure the intrinsic charge carrier mobility, (2) to develop a platform for measuring and depositing polymer thin films for organic field-effect transistors, and (3) to deposit polythiophene thin films for inorganic-organic hybrid solar cells and determine how thin film properties effect device performance. Pentacene single-crystal field-effect transistors (OFETs) were successfully manufactured on crystals grown via horizontal vapor-phase reactors designed for simultaneous ultrapurification and crystal growth. These OFETs led to calculated pentacene field-effect mobility of 2.2 cm2/Vs. During the sublimation of pentacene at atmospheric pressure, a pentacene disporportionation reaction was observed whereby pentacene reacted with itself to form a peripentacene, a 2:1 cocrystal of pentacene:6,13-dihydropentacene and 6,13-dihydropentacene. This has led to the proposal of a possible mechanism for the observed disproportionation reaction similar to other polyaromatic hydrocarbons, which may be a precursor for explaining the formation of graphite. Several silicon-based and PET-based field-effect transistor platforms were developed for the measurement of mobility of materials in the thin film state. These platforms were critically examined against one another and the single-crystal devices in order to determine the optimal device design for highest possible mobility data, both theoretically based on silicon technology and commercially based on individual devices on flexible substrates. Novel FET device designs were constructed with a single gate per device on silicon and PET as well as the commonly used common-gate device. It was found that the deplanarization effects and poor gate insulator quality of the individual gate devices led to lower overall performance when compared to the common gate approach; however, good transistor behavior was observed with field modulation. Additionally, these thin films were implemented into inorganic-organic hybrid and purely organic solid-state photovoltaic cells. A correlation was drawn between the thin film properties of the device materials and the overall performance of the device. It was determined that each subsequent layer deposited on the device led to a planarization effect, and that the more pristine the individual layer, the better device performance. The hybrid cells performed at VOC = 0.8V and JSC = 55A/cm2.

Various solution-processed methods have been employed in this work. For the synthesis of graphene, a chemical exfoliation method has been used to generate large graphene flakes in the solution phase. In addition, chemical or electro polymerization has been used for synthesizing polyanthracene, which tends to form graphene nanoribbon through cyclodehydrogenation. For the device fabrication, graphene oxide (GO) thin films were deposited from solution phase on the vapor-silanzed aminosilane surface to make semiconducting active layer or conducting electrodes. Gold nanoparticles (AuNPs) were selectively self-assembled from solution phase to pattern nanowires.

elementares da eletrônica orgânica, vêm sendo desenvolvidos e integrados para realização de dispositivos eletrônicos de baixo custo, alto volume e flexíveis. Nesta tese foi proposta uma tecnologia para a construção de OFETs sobre substrato flexível e a caracterização destes dispositivos foi feita. Transistores com diferentes comprimentos de canal (L= 5, 10, 20 e 40 μm) foram construídos e avaliados. As características e configuração do poli (álcool vinílico) (PVA) como dielétrico de porta foram definidas através da otimização da reticulação, grau de hidrólise e peso molecular. O PVA utilizado como dielétrico de porta foi de alto peso molecular, hidrolização incompleta e reticulado com dicromato de amônia. O desafio de compatibilização entre os filmes de PVA e poli (3-hexiltiofeno) (P3HT) com diferentes polaridades foi superado e abriu caminho para construção de OFETs e capacitores, estes últimos usados para extrair a capacitância por unidade de área do conjunto PVA-P3HT. Os processos desenvolvidos de fotolitografia e de oxidação por plasma de oxigênio possibilitaram a construção de transistores flexíveis inéditos de Ni-P3HT-PVA-Al com uma arquitetura top-gate, bottom-contacts. Os transistores apresentaram boas características de saída, baixa tensão de operação (< |-6 V|), boa mobilidade (0,015 cm2/V*s) e razões ION/IOFF aceitáveis (~300). A resistência de contato e mobilidade efetiva foram obtidas através do método de linhas de transmissão. Uma boa estabilidade temporal foi atingida, porém ocorreram instabilidades na operação quando os transistores foram testados. A corrente do transistor não se manteve estável, primeiramente aumentou e depois diminuiu com a realização de sucessivas medidas. As razões deste comportamento foram discutidas. Inversores foram demonstrados e caracterizados. O aperfeiçoamento da tecnologia desenvolvida possibilitará a construção de circuitos orgânicos analógicos e digitais para aplicações cotidianas que demandem baixo custo e alto volume. / Organic field effect transistors (OFETs), the elementary components of organic electronics, are constantly developed and integrated to realize low cost, high volume, flexible electronic devices. In this thesis a technology for creating OFETs on flexible substrates is proposed and their characterization is performed. Flexible transistors with different channel lengths (L= 5, 10, 20 and 40 μm) were built and evaluated. The characteristics and configurations of the poly (vinyl alcohol) (PVA) as gate dielectric were defined through the optimization of crosslinking, the degree of hydrolysis and the molecular weight. The chosen PVA is cross-linked with ammonium dichromate, has a high molecular weight and incomplete hydrolization. The challenge of integrating polymers of different polarities: PVA and poly (3-hexyl thiophene) (P3HT), the chosen organic semiconductor, was overcome and opened a path to the construction of OFETs and capacitors. From the later capacitance per unit area was extracted. The developed processes of photolithography and oxygen plasma etching allowed the construction of unprecedented Ni-P3HT-PVA-Al flexible top-gate, bottomcontacts transistors. The transistors showed good output characteristics, low operation voltages (< |-6 V|), acceptable carrier mobilities (0,015 cm2/V*s) and ION/IOFF fractions (~300). Contact resistance and effective mobility were extracted through transmission line method. The transistors showed great temporal stability, but when operated instabilities occurred. The transistor output current first increased and later degraded with successive testing. Organic PMIS inverters were demonstrated and characterized. The optimization of this technology may lead to construction of flexible logic organic devices for everyday applications.