In our work an optical bus-coupler is proposed, which enables easy bidirectional connection between two waveguides without interrupting the bus using a core-to-core coupling principle. With bended waveguides the coupling ratio can be tuned by adjusting the overlap area of the two cores. In order to ensure large overlap areas at short coupling lengths, the waveguides have rectangular cross sections. To examine the feasibility of this coupling concept a simulation was performed, which is presented in this paper. Due to multimode waveguides, used in short range data communication, a non-sequential ray tracing simulation is reasonable. Simulations revealed that the bending of the waveguide causes a redistribution of the energy within the core. Small radii push the main energy to the outer region of the core increasing the coupling efficiency. On the other hand, at excessive lowered bend radii additional losses occur (due to a coupling into the cladding), which is why an optimum has to be found. Based on the simulation results it is possible to derive requirements and design rules for the coupling element.

The absorptance in vertical nanowire (nw) arrays is typically dominated by three optical phenomena: radial mode resonances, near-field evanescent wave coupling, and Fabry–Perot (F-P) mode resonances. The contribution of these optical phenomena to GaAs, InP and InAs nw absorptance was simulated using the finite element method. The study compared the absorptance between finite and semi-infinite nws with varying geometrical parameters, including the nw diameter (D), array period (P), and nw length (L). Simulation results showed that the resonance peak wavelength of the HE1n radial modes linearly red-shifted with increasing D. The absorptance and spectral width of the resonance peaks increased as L increased, with an absorptance plateau for very long nws that depended on D and P. Near-field coupling between neighbouring nanowires (nws) was observed to increase with increasing diameter to period ratio (D/P). The effect of F-P modes was more pronounced for shorter nws and weakly coupled light. Based on the collective observation of the correlation between nw geometry and optical phenomena in GaAs, InP, and InAs nw arrays, a periodic array of vertical InSb nws was designed for photodetectors in the low-atmospheric absorption window (λ = 3-5 μm) within the mid-wavelength infrared (MWIR) spectrum (λ = 3-8 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (D, P, and L) for high optical absorptance (~0.8), which exceeded that of a thin film of equal thickness. The results further showed that the HE1n resonance wavelengths in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared (NIR) to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector was examined. Lastly, how light flux enters the nw top and sidewalls on HE11 resonance was investigated. / Dissertation / Doctor of Philosophy (PhD)

Le contexte de cette thèse couvre les dispositifs photoniques hybrides III-V sur silicium. L’étude porte sur l’intégration par collage de matériau à base d'InP sur le silicium, puis la conception d’un guide optique comportant une nanostructuration qui permettra la sélection en longueur d’onde dans un laser DFB hybride. Enfin, on étudie les étapes technologiques de fabrication d’un laser hybride injecté électriquement fonctionnant dans le domaine spectral 1.55µm, et on caractérise les dispositifs. Pour associer les matériaux III-V sur Si, nous avons développé le collage sans couche intermédiaire que l’on nomme collage hétéroépitaxial ou oxide-free. Ce collage est reporté dans la littérature comme présentant une meilleure qualité électrique. Nous avons établi les conditions de préparation permettant d’obtenir des surfaces parfaitement désoxydées, et les conditions de recuit conduisant à une interface hybride sans oxyde et sans dislocation. Mais ce recuit est réalisé à température assez élevée (~450-500°C). Nous avons alors développé le collage avec une fine couche intermédiaire d’oxyde réalisé à plus faible température -300°C- qui présente l'avantage d'être compatible avec la technologie CMOS. Nous avons étudié différentes approches pour élaborer et activer une couche d’oxyde très fine (~3nm), de façon à obtenir une surface collée sans zones localement non collées. Le collage est dans les deux cas réalisé sous vide dans un équipement de type Bonder Suss SB6e. La qualité structurale de l’interface a été observée par STEM et la qualité mécanique du joint de collage a été caractérisée par indentation. Une méthode originale de mesure quantitative et locale de l’énergie du joint de collage a été développée. La qualité optique des couches collées a été étudiée par la mesure de la photoluminescence de puits quantiques placés proches du joint d’interface. En conséquence du collage sans couche intermédiaire ou avec une couche très fine, le design du mode optique est de type double-cœur, qui ne nécessite pas de taper. Le guide optique Si est de type shallow ridge, le confinement latéral étant assuré par un matériau nanostructuré à une période sub-longueur d’onde. Ce matériau fonctionne comme un matériau effectif uniaxe pour lequel on a calculé les indices optiques ordinaire et extraordinaire selon la géométrie de la nanostructuration. On peut rajouter sur cette nanostructuration une super-périodicité qui conduit à un fonctionnement sélectif en longueur d’onde. Le comportement modal du guide est simulé à l'aide du logiciel COMSOL Multiphysics, le comportement spectral est simulé par FTDT 3D. Nous avons validé la pertinence de ce design en mesurant la transmission de guides hybrides. Ce design sera inclus dans un laser et permettra d’obtenir une émission monofréquence de type DFB. Nous avons développé les étapes technologiques nécessaires à la fabrication d’un laser hybride à base d'InP sur Silicium fonctionnant en injection électrique. Nous avons mis en oeuvre de nombreuses techniques, et développé plusieurs procédés spécifiques, en particulier, des procédés de gravure sèche de type Inductive Coupled Plasma Reactive Ion Etching ICP-RIE pour la gravure de la nanostructuration dans le silicium, et pour la gravure du mésa du laser. La présence des 2 matériaux III-V et Si dans le dispositif hybride rend ces étapes complexes. Les premiers résultats peuvent être améliorés en optimisant la technologie des contacts. Un design permettant de s’affranchir de la pénalité thermique présenté par tous les dispositifs ayant les 2 contacts électriques du coté du matériau III-V a été proposé, exploitant le passage du courant à l’interface hybride III-V / Si, ce qui est possible dans le cas du collage oxide-free. Cette approche ouvre des perspectives d’intégration au-delà de la photonique. / This work contributes to the general context of III-V materials on Silicon hybrid devices for optical integrated functions, mainly emission/amplification at 1.55µm. Devices are considered for operation under electrical injection, reaching performances relevant for data transfer application. The main three contributions of this work concern: (i) bonding InP-based materials on Si, (ii) nanostructuration of the Si guiding layer for spatial and spectral control of the guided mode and (iii) technology of an hybrid electrically injected laser, with a special attention to the thermal budget. Bonding has been investigated following two approaches. The first one we call heterohepitaxial or oxide-free bonding, is performed without any intermediate layer at a temperature ~450°C. This approach has the great advantage allowing electrical transport across the interface, as reported in the literature. We have developed oxide-free surface preparation for both materials, mainly InP-based layers, and established bonding parameter processing. An in-depth STEM and RX structural characterization has demonstrated an oxide-free reconstructed interface without any dislocation except on one or two atomic layers which accommodate the large lattice mismatch (8.1%) between InP and Si. Photoluminescence of quantum wells intentionally grown close to the interface has shown no degradation. We have also developed an oxide-based bonding process operated at 300°C in order to be compatible with CMOS processing. The original ozone activation of the very thin (~5nm) oxide layer we have proposed demonstrates a bonding surface without any unbonded area due to degassing under annealing. We have developed an original method based on nanoindentation characterization in order to obtain a quantitative and local value of the surface bonding energy. Related to the absence or to the very thin intermediate layer between the two materials, our modal design is based on a double core structure, where most of the optical mode is confined in the Si guiding layer, and no taper is required. The Si waveguide on top of the SOI stack is a shallow ridge. A nanostructured material on both sides of the waveguide core ensures the lateral confinement, the nanostructuration geometry being at a sub-wavelength period in order to operate this material well below its photonic gap. It behaves as an uniaxial material with ordinary and extraordinary indices calculated according to the structuration geometry. Such a structuration allows modal and spectral control of the guided mode. 3D modal and spectral simulation have been performed. We have demonstrated, on a double-period structuration, a wavelength selective operation of hybrid optical waveguides. Such a double-period geometry could be included in a laser design for DFB operation. This nanostructuration has larger potential application such as coupled waveguides arrays or selective resonators. We have developed all the technological processing steps for an electrically injected hybrid laser fabrication. Main developments concern dry etching, performed with the Inductive Coupled Plasma Reactive Ion Etching ICP-RIE technique of both the nanostructuration of the Silicon material, and the mesa of the hybrid laser. Efficient electrical contacts fabrication is also a complex step. First lasers operating performances could be improved. We have investigated a specific design in order to overcome the thermal penalty encountered by all the hybrid devices. This penalty is due to the thick buried oxide layer of the SOI stack that prevents heating related to the current flow to be dissipated. Taking advantage of the electrical transport we have shown at the oxide-free interface, we propose a design where the n-contact is defined on the guiding Si layer, suppressing thermal heating under electrical operation. Such an approach is very promising for densely packed hybrid devices integrated with associated electronic driving elements on Si.

The analysis of wide-angle cellular light scattering patterns is a challenging problem. Small changes to the organization, orientation, shape, and optical properties of scatterers and scattering populations can significantly alter their complex two-dimensional scattering signatures. Because of this, it is difficult to find methods that can identify medically relevant cellular properties while remaining robust to experimental noise and sample-to-sample differences. It is an important problem. Recent work has shown that changes to the internal structure of cells---specifically, the distribution and aggregation of organelles---can indicate the progression of a number of common disorders, ranging from cancer to neurodegenerative disease, and can also predict a patient's response to treatments like chemotherapy. However, there is no direct analytical solution to the inverse wide-angle cellular light scattering problem, and available simulation and interpretation methods either rely on restrictive cell models, or are too computationally demanding for routine use. This dissertation addresses these challenges from a computational vantage point. First, it explores the theoretical limits and optical basis for wide-angle scattering pattern analysis. The result is a rapid new simulation method to generate realistic organelle scattering patterns without the need for computationally challenging or restrictive routines. Pattern analysis, image segmentation, machine learning, and iterative pattern classification methods are then used to identify novel relationships between wide-angle scattering patterns and the distribution of organelles (in this case mitochondria) within a cell. Importantly, this work shows that by parameterizing a scattering image it is possible to extract vital information about cell structure while remaining robust to changes in organelle concentration, effective size, and random placement. The result is a powerful collection of methods to simulate and interpret experimental light scattering signatures. This gives new insight into the theoretical basis for wide-angle cellular light scattering, and facilitates advances in real-time patient care, cell structure prediction, and cell morphology research.

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