The thesis deals with the preparation, characterization and, in particular, with the switching properties of phase-change material (PCM) thin films. The films were deposited using the Pulsed Laser Deposition (PLD) technique. Phase transformations in these films were triggered by means of thermal annealing, laser pulses, and electrical pulses. The five major physical aspects structure transformation, crystallization kinetics, topography, optical properties, and electrical properties have been investigated using XRD, TEM, SEM, AFM, DSC, UV-Vis spectroscopy, a custom-made nanosecond UV laser pump-probe system, in situ resistance measurements, and conductive-AFM. The systematic investigation of the ex situ thermally induced crystallization process of pure stoichiometric GeTe films and O-incorporating GeTe films provides detailed information on structure transformation, topography, crystallization kinetics, optical reflectivity and electrical resistivity. The results reveal a significant improvement of the thermal stability in PCM application for data storage. With the aim of reducing the switching energy consumption and to enhance the optical reflectivity contrast by improving the quality of the produced films, the growth of the GeTe films with simultaneous in situ thermal treatment was investigated with respect to optimizing the film growth conditions, e.g. growth temperature, substrate type. For the investigation of the fast phase transformation process, GeTe films were irradiated by ns UV laser pulses, tailoring various parameters such as pulse number, laser fluence, pulse repetition rate, and film thickness. Additionally, the investigation focused on the comparison of crystallization of GST thin films induced by either nano- or femtosecond single laser pulse irradiation, used to attain a high data transfer rate and to improve the understanding of the mechanisms of fast phase transformation. Non-volatile optical multilevel switching in GeTe phase-change films was identified to be feasible and accurately controllable at a timescale of nanoseconds, which is promising for high speed and high storage density of optical memory devices. Moreover, correlating the dynamics of the optical switching process and the structural information demonstrated not only exactly how fast phase change processes take place, but also, importantly, allowed the determination of the rapid kinetics of phase transformation on the microscopic scale. In the next step, a new general concept for the combination of PCRAM and ReRAM was developed. Bipolar electrical switching of PCM memory cells at the nanoscale can be achieved and improvements of the performance in terms of RESET/SET operation voltage, On/Off resistance ratio and cycling endurance are demonstrated. The original underlying mechanism was verified by the Poole-Frenkel conduction model. The polarity-dependent resistance switching processes can be visualized simultaneously by topography and current images. The local microstructure on the nanoscale of such memory cells and the corresponding local chemical composition were correlated. The gained results contribute to meeting the key challenges of the current understanding and of the development of PCMs for data storage applications, covering thin film preparation, thermal stability, signal-to-noise ratio, switching energy, data transfer rate, storage density, and scalability.

Orientador: Carlos Henrique de Brito Cruz / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-09-27T13:12:22Z (GMT). No. of bitstreams: 1 PadilhaJunior_LazaroAurelio_D.pdf: 3832856 bytes, checksum: ee1e342cd7bc49e51127fe13ee9ed626 (MD5) Previous issue date: 2006 / Resumo: Nesta tese as propriedades ópticas lineares e não-lineares em pontos quânticos de semicondutores de band-gap diretos, CdTe e CdSe, são estudados em escala temporal de femtossegundos, especialmente aquelas propriedades importantes para aplicações em chaveamento totalmente óptico, como o tempo de resposta e a susceptibilidade de terceira ordem. Os processos de recombinação de elétrons fotoexcitados são investigados assim como seus tempos de resposta, usando um modelo teórico que considera a influência dos estados de armadilhas de superfície e da recombinação Auger. As propriedades ópticas não lineares de terceita ordem, absorção de dois fótons e efeito Kerr óptico, são estudados através de diferente técnicas experimentais: Z-scan, bombeio e prova e foto-luminescência excitada por dois fótons. Forte influência do tamanho dos nanocristais é observada, especialmente nos espectros de absorção de dois-fótons. Modelos teóricos baseados na aproximação de massa efetiva e no modelo p k de Kane são usados para descrever a influência do confinamento quântico nos processos de absorção de dois-fótons degenerados e não-degenerados. A importância da mistura das bandas de buracos é observada no ajuste teórico dos espectros de absorção de dois fótons. Finalmente, chaves totalmente ópticas operando por saturação de absorção e por controle de polarização são demonstradas para pontos quânticos de CdTe em matriz vítrea / Abstract: In this thesis the linear and non-linear optical properties of direct band-gap semiconductors, CdTe and CdSe, quantum dots are studied at femtosecond time scale, mainly those properties important for applications in all-optical switching such as response time and third order susceptibility. The photo-excited electron recombination processes are investigated as well their response time using a theoretical model considering the influence of the surface trapping states and the Auger recombination. The third order nonlinear optical properties, two-photon absorption and optical Kerr effect, are studied by different experimental techniques: Z-scan, pump and probe and two-photon induced photo-luminescence. Strong influence from the nanocrystals size is observed, especially on the two-photon absorption spectra. Theoretical models based on the effective mass approximation and Kane¿s p k model are used to describe the influence of the quantum confinement on the degenerate and non-degenerate two-photon absorption processes. The importance of the hole band mixing is easily seen from the two-photon absorption fitting. Finally, all-optical switching by absorption saturation and polarization control are demonstrated for CdTe quantum dots in doped glass / Doutorado / Propriedades Óticas e Espectroscopia da Matéria Condensada ; Outras Inter. da Matéria Com. Rad. e Part / Doutor em Ciências

Demonstration of ultrafast all-optical signal processing (AOSP) using silicon as the active material has been limited by large two-photon absorption loss and long lifetimes of the resulting free carriers. For AOSP at speeds in the terahertz, an order of magnitude faster than that the fastest current electronic counterpart, a class of π-conjugated organic molecules called polymethines provides a promising alternative to silicon as they possess large third-order nonlinearities, and ultrafast polarization response to an incident field. The challenge in the application of polymethines as active nonlinear optical materials for AOSP is in translating their promising molecular properties into bulk material properties. The large linear polarizability and charged nature of the polymethines molecules strongly promote aggregation and phase-separation in solid blends, offsetting their advantageous molecular optical properties. In this work, polymethines’ resistance to deleterious spontaneous symmetry breaking and aggregation was enhanced by substitutions of metal- and chalcogen- containing terminal groups, and rigid steric groups above and below the π-conjugated plane of polymethine chain. The resulting polymethines/amorphous polycarbonate (APC) blend films demonstrated an unprecedentedly high two-photon figure-of-merit, |Re(χ(3))/Im(χ(3))| and low linear loss. The optical quality of the polymethines/APC films was also improved by replacing the commonly-used alkyl ammonium counterions with more polarizable aryl phosphonium counterions with moderate ground state dipole moment. The resulting dye-polymer blend films showed an enhanced near-infrared transparency while its magnitude of the third-order susceptibility, |χ(3)|, showed a good agreement with that extrapolated from the molecular third-order polarizability, γ. For facile integration of these promising organic materials into SOH, the substrate surface was functionalized using silane coupling chemistry for the reduction of surface energy mismatch between the polymer films and the waveguide containing substrates. The optical and SEM micrographs showed vastly improved coverage and infiltration of the microfeatures. Furthermore, to enable the precise engineering of waveguide cross-sectional dimensions for single-mode propagation in the organic cladding, the dispersion curves of the polymethines/polymer blends were generated using prism coupling and ellipsometry. The combined efforts in the development of molecules and materials discussed in the thesis have culminated into a successful identification and optimization of the polymethines dyes and their polymer blends for imminent demonstrations of on-chip AOSP at terahertz speed.

The topic of this thesis is the development of devices for telecom applications based on poled optical fibers. The focus is on a specific function, optical switching/modulation. Some of the most important results are summarized below. Optical switching at telecom wavelengths (1.55 μm) is demonstrated in an all-fiber switch based on a fiber with internal electrodes. The fiber is made electro-optically active with a thermal poling process in which a strong electric field is recorded in the glass at a temperature of 255 °C. After poling, the fiber is put in one arm of a Mach-Zehnder interferometer and by applying a voltage across the two electrodes the refractive index is modulated and the optical signal switched from one output port to the other. A switching voltage of 190 V at 1550 nm was achieved, which to the best of our knowledge is the lowest value reported. By carefully matching the lengths of the fibers in the two arms of the interferometer the optical bandwidth could be made as large as 20 nm. The extinction ratio, determined by the power ratio in the two arms, was 30 dB and the highest modulation frequency was 30 MHz. Poled fibers were packaged to increase the thermal and mechanical stability and to make handling easier. 40 Gb/s transmission test through the device showed no bit-error-rate performance degradation. Protection switching of a 10 Gb/s signal is also demonstrated. The depletion region in a poled fiber was found to be wedge-shaped and very wide, 13 μm and completely overlapped with the core. In a time-resolved poling experiment the recorded electric field was measured. The sign of the field changed after ~20 min, when the depletion region passed through the core, which led to the conclusion that an electric field is present also outside of the depletion region. A ring laser was constructed with an erbium doped fiber as the gain medium. A fiber modulator was placed inside the cavity and when a small RF signal, with a frequency matched to the cavity ground frequency, was applied to the modulator the laser was modelocked. The output pulse train contained pulses of sub ns duration and is the first demonstration of mode-locking using poled fibers. A sampled grating with 16 channels spaced by 50 GHz was inserted into the cavity. The fiber modulator had optical bandwidth of 7 nm with center wavelength that depends on the applied voltage. By applying of 10 – 210 V to the modulator it was possible to tune the laser to 11 of the 16 channels for a total tuning range of over 4 nm. A scheme to deposit 1 μm thin silver electrodes inside the holes of an optical fiber is demonstrated together with a new method of creating periodic electrodes by periodically ablating the silver film electrodes. The periodic electrodes are used to create a quasi-phase matched (QPM) nonlinearity in a fibers which is showed in a proof of principle experiment. / QC 20101015

Made available in DSpace on 2015-05-14T12:14:19Z (GMT). No. of bitstreams: 1 parte1.pdf: 1564749 bytes, checksum: f636c3379c524ad8d77d3be5f44c4c36 (MD5) Previous issue date: 2010-06-30 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / We analyze the dynamics of semiconductor lasers radiation frequency when these lasers are subject to different conditions of optical feedback, and we demonstrate how it is possible to control the emission frequency using the different configurations explored. In the first system studied a semiconductor laser is fed back with light which polarization is orthogonal to the output polarization, spectrally filtered by a cesium atomic vapor. This system, besides presenting an effective technique to stabilize the laser frequency and reduce the laser linewidth, was the first to exhibit frequency bistable and multistable optical regimes with amplitude practically constant. This unique feature opens the way for applications in all-optical FM logical devices. The bistable and multistable regimes are interpreted through a phenomenological model, and, for the bistable regime, we discuss a rate equation model, built taking in account thermal effects and gain saturation. We also present an all-optical frequency switch, the first of his kind. The second system is used to investigate the behavior of the emission frequency of a semiconductor laser with an external cavity, inside which is placed an atomic filter. For different values of the injection current we observe the laser frequency locking in the atomic line, bistability and reproducible frequency instabilities. / Estudamos a dinâmica em frequência da radiação emitida por lasers semicondutores submetidos a diferentes condições de realimentação ótica e demonstramos como é possível o controle da frequência de emissão pelo uso das diferentes configurações exploradas. No primeiro sistema estudado, um laser semicondutor é realimentado por luz com polarização ortogonal á de saída, filtrada espectralmente por vapor atômico de césio. Além de apresentar uma técnica efetiva para estabilização da frequência laser e redução de largura de linha, esse foi o primeiro sistema a exibir regimes de biestabilidade e multiestabilidade ótica exclusivamente em sua frequência, ou seja, com amplitude constante. Essa característica única abre caminho para aplicações desta técnica em dispositivos lógicos FM do tipo tudo ótico . O aparecimento desses regimes é analizado através de um modelo fenomenológico e, para o caso biestável, construímos também um modelo de equações de taxa, onde levamos em conta efeitos térmicos e de saturação de ganho no laser semicondutor. Como aplicação dessa técnica apresentamos o funcionamento de uma chave em frequência do tipo tudo-ótico , a primeira deste gênero. O segundo sistema experimentalmente investigado foi concebido para produzir um comportamento dinâmico da frequência de um laser semicondutor com cavidade estendida quando um filtro atômico é posicionado dentro dessa cavidade. Para diferentes valores da corrente de injeção observamos o travamento da frequência laser na linha atômica, biestabilidade e instabilidades não aleatórias.

Orientador: Evandro Conforti / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-08T01:55:52Z (GMT). No. of bitstreams: 1 Castelli_ClaudioSelmi_M.pdf: 2856453 bytes, checksum: 1efb001a79f5f2d885e231abadd78d1f (MD5) Previous issue date: 2007 / Resumo: Uma nova técnica de geração de sinais pulsados de microondas é desenvolvida. Baseia-se na composição de dois sinais arbitrários, um trem de pulsos ultra-rápidos e uma portadora de microondas, originados a partir de diferentes fontes e combinados no domínio óptico de forma a preservar ao máximo as características espectrais e temporais dos sinais. São apresentados os conceitos utilizados na técnica e toda a configuração empregada na sua validação experimental. Os resultados obtidos são discutidos e comparados com os sinais pulsados de microondas gerados a partir de um moderno gerador comercial. Os principais componentes utilizados são também caracterizados e propostas de melhorias são apresentadas. A forma de onda obtida a partir da técnica desenvolvida atingiu os resultados esperados / Abstract: A novel technique of pulsed microwave waveform generation has been developed. It is based on the mixture of two arbitrary signals, an ultra-fast pulse train and a microwave carrier, all generated from different sources and combined in the optical domain in order to preserve the spectral and temporal features as much as possible. The technique's concepts and the setup used for the experimental validation have been presented. The obtained results are discussed and compared to the pulsed microwave signals generated by a modern commercial microwave generator. The main components are also characterized and proposals of improvements have been presented. The waveform resulted from this developed technique reached the expected results / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

The thesis deals with the preparation, characterization and, in particular, with the switching properties of phase-change material (PCM) thin films. The films were deposited using the Pulsed Laser Deposition (PLD) technique. Phase transformations in these films were triggered by means of thermal annealing, laser pulses, and electrical pulses. The five major physical aspects structure transformation, crystallization kinetics, topography, optical properties, and electrical properties have been investigated using XRD, TEM, SEM, AFM, DSC, UV-Vis spectroscopy, a custom-made nanosecond UV laser pump-probe system, in situ resistance measurements, and conductive-AFM. The systematic investigation of the ex situ thermally induced crystallization process of pure stoichiometric GeTe films and O-incorporating GeTe films provides detailed information on structure transformation, topography, crystallization kinetics, optical reflectivity and electrical resistivity. The results reveal a significant improvement of the thermal stability in PCM application for data storage. With the aim of reducing the switching energy consumption and to enhance the optical reflectivity contrast by improving the quality of the produced films, the growth of the GeTe films with simultaneous in situ thermal treatment was investigated with respect to optimizing the film growth conditions, e.g. growth temperature, substrate type. For the investigation of the fast phase transformation process, GeTe films were irradiated by ns UV laser pulses, tailoring various parameters such as pulse number, laser fluence, pulse repetition rate, and film thickness. Additionally, the investigation focused on the comparison of crystallization of GST thin films induced by either nano- or femtosecond single laser pulse irradiation, used to attain a high data transfer rate and to improve the understanding of the mechanisms of fast phase transformation. Non-volatile optical multilevel switching in GeTe phase-change films was identified to be feasible and accurately controllable at a timescale of nanoseconds, which is promising for high speed and high storage density of optical memory devices. Moreover, correlating the dynamics of the optical switching process and the structural information demonstrated not only exactly how fast phase change processes take place, but also, importantly, allowed the determination of the rapid kinetics of phase transformation on the microscopic scale. In the next step, a new general concept for the combination of PCRAM and ReRAM was developed. Bipolar electrical switching of PCM memory cells at the nanoscale can be achieved and improvements of the performance in terms of RESET/SET operation voltage, On/Off resistance ratio and cycling endurance are demonstrated. The original underlying mechanism was verified by the Poole-Frenkel conduction model. The polarity-dependent resistance switching processes can be visualized simultaneously by topography and current images. The local microstructure on the nanoscale of such memory cells and the corresponding local chemical composition were correlated. The gained results contribute to meeting the key challenges of the current understanding and of the development of PCMs for data storage applications, covering thin film preparation, thermal stability, signal-to-noise ratio, switching energy, data transfer rate, storage density, and scalability.

<p>One of the longstanding goals of photonics research has been to obtain strong optical nonlinearities. A promising method to achieve this goal is to operate in the so-called epsilon near zero (ENZ) spectral regime, where the real part of the dielectric permittivity changes sign. If accompanied by low losses, this region enables a platform to achieve extraordinarily high nonlinear response, along with many other interesting optical phenomena. In this work, some of the common all-optical switching structures employing homogeneous ENZ materials are investigated under varying conditions of frequency, incidence angle, and polarization. The optimum switching conditions have been highlighted to pave the way forward to the best experimental configurations in future studies. Moreover, the properties of some of the emerging novel plasmonic materials such as aluminum-doped zinc oxide (AZO) and titanium nitride (TiN) are investigated, specifically for ENZ applications. Their thickness-dependent crystalline structure and carrier densities are employed as a method to control their optical properties. A near-perfect absorption scheme is demonstrated utilizing the Ferrell-Berreman mode occurring at the ENZ region of ultrathin AZO and TiN film. The ENZ frequency and the associated absorption peak of AZO are engineered through thickness-dependence to cover most of the telecom range. This work covers the theoretical background for ENZ nonlinearities and looks into the materials aspect for better control of nonlinearities in experimental realizations.</p>

L'évolution vers de nouveaux services, comme la TV à la demande, nécessitant de grosses bandes passantes remet en question les débits transportés par chaque canal optique d'un réseau WDM. Les débits des canaux ont atteint aujourd'hui les 100 Gbit/s. Cette montée en débit doit être accompagnée par de nouvelles fonctionnalités au sein des réseaux de transport optiques. Améliorer la flexibilité et assurer la transparence des réseaux optiques sont des défis très importants auxquels les opérateurs doivent faire face aujourd'hui. Un réseau optique est dit transparent, si les signaux optiques transportés ne subissent aucune conversion optoélectronique sauf au moment de leur insertion et de leur extraction dans le réseau optique. La flexibilité, quant à elle, concerne principalement les fonctions d'agrégation et de désagrégation optiques. Aujourd'hui ces fonctions d'agrégation et de désagrégation sont réalisées dans le domaine électronique, ce qui avec la montée du débit, va engendrer un coût important pour les opérateurs. Une manière d'y remédier serait de trouver une technologie adaptée à la montée du débit et offrant la possibilité de faire de l'agrégation et de la désagrégation optique des flux de trafics. Dans cette thèse nous proposons d'étudier une technique de commutation tout-optique offrant la possibilité de faire de la commutation optique intra-canal. Cette technique, baptisée multi-bande OFDM, consiste à diviser un canal WDM en plusieurs entités appelées sous-bandes. Le nombre de ces entités dépend des contraintes technologiques des équipements utilisés pour générer le canal multi-bande (les filtres optiques, les convertisseurs analogiques/numérique et numériques/analogiques). Nous comparons la technologie multi-bande OFDM par rapport à des technologies tendancielles mono-bande : le cas mono-bande opaque et mono-bande transparent. Nous démontrons que la technologie multi-bande OFDM peut être un compromis entre ces deux technologies pour les futurs réseaux de télécommunications optiques. Pour ce faire, nous calculons les performances en termes de blocage. Nous étudions l'impact de la conversion de longueurs d'onde sur les réseaux multi-bande OFDM ainsi que l'impact d'augmenter les nombres de sous-bandes sur les performances du réseau. Nous dégageons les limites technologiques de cette approche. Dans une autre partie de l'étude, nous montrons l'intérêt économique de la technologie multi-bande OFDM. Nous exposons le gain en coût des émetteurs/récepteurs obtenu grâce au déploiement de la technologie multi-bande OFDM sur un réseau cœur et un réseau métropolitain. / The evolution of new telecommunication services, which requires large bandwidth, challenges bit-rates transported by each optical channel of a WDM network. Bit-rates of optical channels have now reached 100 Gbit/s. This increase in bit-rate must be supported by new features in optical network. Improve flexibility and ensure transparency of optical network, are very important challenges that telecom operators face today. An optical network is called transparent, if the transported optical signals are not converted in electrical domain except at the time of their insertion and extraction in/from the optical network. Flexibility concerns mainly the aggregation / disaggregation processes. Today, the functions of aggregation/disaggregation are made on the electrical domain. This generates a significant cost for operators. One way to avoid this would be to find a technology which offers high bit-rates and enable the aggregation and disaggregation functions in the optical domain. In this thesis, we propose to study all-optical switching technology at the sub-wavelength granularity. This technique, called multi-band OFDM, consists in dividing a WDM channel into multiple entities, called sub-bands. The number of sub-bands depends on the technological constraints of optical components used to transport the optical signal (optical filters, digital analogical converters, analogical digital converters, optical transponders, optical multiplexers, etc.). We compare the multi-band OFDM technology to two legacies scenarios: mono-band opaque and mono-band transparent WDM technologies. We demonstrate that the multi-band OFDM technology can be a trade-off between these two legacies scenarios. To do that, we studied the performance in terms of blocking ratio of the multi-band OFDM technology and mono-bands WDM technologies. We study the impact of increasing the number of sub-bands on network performances. We also investigate the technical limits of this technology. Moreover, we demonstrate the economic interest of the multi-band OFDM. We expose the gain on the number of transponders when the multi-band OFDM technology is deployed on metro and core network.

This thesis reports an experimental characterization of the ultrafast gain and refractive index dynamics of a novel InAs/InGaAsP/InP quantum-dot (QD) semiconductor optical amplifier (SOA) operating near 1.55-µm wavelengths, assessing its high-speed performance characteristics for the first time. The thesis also studies the influence of the degree of quantum confinement on the dynamics of SOAs by comparing the zero-dimensional (0-D) QD's dynamics to those in 1-D InAs/InAlGaAs/InP quantum-dash (QDash), and 2-D InGaAsP/InGaAsP/InP quantum-well (QW) SOAs, both of which also operate near 1.55-µm wavelengths, and are made with matching or similar materials and structures. The ultrafast (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the SOAs are characterized via advanced heterodyne pump-probe measurements with 150-femtosecond resolution. It is found that the QD SOA has an 80-picosecond amplitude, and 110-picosecond phase recovery lifetime in the gain regime, 4-6 times faster than the QDash and QW recovery lifetimes, as well as reduced ultrafast transients, giving it the best properties for high-speed (> 100 Gb/s) all-optical signal processing in the important telecommunications wavelength bands. An impulse response model is developed and used to analyze the dynamics, facilitating a comparison of the gain compression factors, time-resolved linewidth enhancement factors (alpha-factors), and instantaneous dynamic coefficients (two-photon absorption and nonlinear refractive-index coefficients) amongst the three structures. The quantum-dot device is found to have the lowest effective alpha-factor, 2-10, compared to 8-16 in the QW, as well as time-resolved alpha-factors lower than in the QW—promising for reduced-phase-transient operation at high bitrates. Significant differences in the alpha-factors of lasers with the same structure are found, due to the differences between gain changes that are induced optically or through the electrical bias. The relative contributions of stimulated transitions and free-carrier absorption to the total carrier heating dynamics in SOAs of varying dimensionality are also reported for the first time. Examining the QD electroluminescence and linear gain spectra in combination with the carrier dynamics also brings about conclusions on the nature of the quantum confinement, dot energy-level structure, and density of states—aspects of the material that have not been previously well understood.