In der Entwicklung von Technologien für die nachhaltige Erzeugung, Speicherung und Umwandlung von Energie werden Hochleistungskatalysatoren benötigt. Im Rahmen dieser Arbeit werden verschiedene Übergangsmetall-basierte Katalysatoren, namentlich TiO2/Kohlenstoff-Komposite, anorganisch-organische Hybridsysteme auf Basis von NiFe Phosphonaten sowie Ni Phosphide, synthetisiert, charakterisiert und hinsichtlich ihrer photo- und elektrokatalytischen Eigenschaften untersucht. Es wird gezeigt, dass die Grenzflächeneigenschaften der TiO2/C-Komposite signifikant durch die Gestaltung des Heizvorgangs während der Synthese beeinflusst werden. Insbesondere der Einsatz von Mikrowellenstrahlung vermag die Synthese von Kohlenstoff-basierten Materialien positiv zu beeinflussen. Schnelles Erwärmen führt zu stärkeren Wechselwirkungen zwischen Nanopartikeln und Kohlenstoff, einheitlicheren Beschichtungen und kleineren Partikeln mit schmaleren Partikelgrößenverteilungen, wodurch die photokatalytische Aktivität verbessert wird. Schichtartige, hybride NiFe-Phenylphosphonat-Materialien werden ausgehend in Benzylalkohol dargestellt und ihre Aktivität in der OER im basischen Milieu untersucht. Die Hybridpartikel werden in-situ in NiFe-Hydroxid Nanoschichten umgewandelt. Röntgenspektroskopische Untersuchungen deuten auf eine induzierte, teilweise verzerrte Koordinationsumgebung der Metallzentren im Katalysator hin. Die Kombination der synergistischen Effekte zwischen Ni und Fe mit den strukturellen Eigenschaften des Hybridmaterials ermöglicht einen effizienten Katalysator. Weiterhin werden Nickel-Phosphide durch die thermische Behandlung der Phenyl- oder Methylphosphonate des Nickels, welche Schichtstrukturen aufweisen, in H2(5%)/Ar-Atmosphäre synthetisiert. Ni12P5, Ni12P5-Ni2P und Ni2P Nanopartikel, die mit einer dünnen Schicht aus Kohlenstoffmaterial beschichtet sind, werden erhalten. Ni12P5-Ni2P und Ni2P Nanopartikel katalysieren die Wasserstoffentwicklungsreaktion (HER) im Sauren effektiv. / High-performance catalysts play a key role in the development of technologies for sustainable production, storage, and conversion of energy. In this thesis, transition-metal-based catalysts, including TiO2/carbon composites, hybrid organic-inorganic NiFe phosphonates, and Ni phosphides are synthesized, characterized, and investigated in photocatalytic or electrocatalytic reactions. TiO2 is frequently combined with carbon materials, such as reduced graphene oxide (rGO), to produce composites with improved properties. TiO2 is more efficiently stabilized at the surface of rGO than amorphous carbon. Rapid heating of the reaction mixture results in a stronger coupling between the nanoparticles and carbon, more uniform coatings, and smaller particles with narrower size distributions. The more efficient attachment of the oxide leads to better photocatalytic performance. Layered hybrid NiFe-phenylphosphonate compounds are synthesized in benzyl alcohol, and their oxygen evolution reaction (OER) performance in alkaline medium is investigated. The hybrid particles transformed in situ into NiFe hydroxide nanosheets. X-ray absorption spectroscopy measurements suggest the metal sites in the active catalyst inherited partly the distorted coordination. The combination of the synergistic effect between Ni and Fe with the structural properties of the hybrid results in an efficient catalyst that generates a current density of 10 mA cm-2 at an overpotential of 240 mV. Moreover, nickel phosphides are synthesized through thermal treatment under H2(5%)/Ar of layered nickel phenyl- or methylphosphonates that act as single-source precursors. Ni12P5, Ni12P5-Ni2P and Ni2P nanoparticles coated with a thin shell of carbonaceous material are produced. Ni12P5-Ni2P and Ni2P NPs efficiently catalyze the hydrogen evolution reaction (HER) in acidic medium. Co2P and CoP NPs are also synthesized following this method.

To date, the search efforts have shifted from the toxic II-VI, III-V and IV-VI semiconductors to more environmentally friendly materials. Among Group II-V semiconductors, Zn3P2 has shown to be a more benign option, similar to Group IV (Ge, Si) materials, for future applications in photovoltaics and optoelectronics. This work is dedicated to the development of wet-chemical synthetic routes of (1) Zn3P2 and (2) Group IV (Ge, Si, Si1-xGex) nanocrystals with precise control over composition, crystal structure, size and dispersity by adjusting different reaction parameters such as temperature, time and solvent composition. Different characterizations will also be employed to probe the size- and composition-dependent physical and optical properties of resulting products. The first part of this work illustrates the synthesis of luminescent Zn3P2 nanocrystals, an earth-abundant and a direct-gap semiconductor possessing high absorption coefficient and long carrier diffusion length, which uphold promising potential in many optoelectronic applications. A hot injection method by using highly reactive P and Zn precursors (P[Si(CH3)3]3 and diethyl zinc) in hexadecylamine and octadecene was developed to prepare a series of alkyl-amine-passivated tetragonal Zn3P2 crystallites with varying size sizes. Substantial blue shifts in the absorption onsets (2.11−2.73 eV) in comparison to the bulk counterpart (1.4−1.5 eV) and a clear red shift with increasing particle size indicates the quantum confinement effects. This is also consistent with the photoluminescent studies with the size-tunable maxima in the visible region (469−545 nm) as a function of growth temperature and time. The phase purity and alkyl-amine passivation of the nanocrystals were determined by structural and surface analysis, confirming the presence of N–Zn and N–P bonds on the tetragonal Zn3P2 crystallites. The second part of this works focuses on the development of a colloidal synthetic strategy of alkyl-amine capped Si1-xGex nanocrystals with control over size- and composition-dependent optical properties. Despite their high miscibility at all compositions, developing a wet-chemical synthesis of Si1-xGex alloys in the nanoscale remains a challenging task, owing to the difference of their crystallization temperatures and the high surface oxidation of Si. Thus an adapted colloidal method is utilized to fabricate single-element Ge and Si nanocrystals. Powder X-ray diffraction indicates successful production of cubic crystalline Ge and amorphous Si nanoparticles individually in oleylamine/octadecene (surfactant/solvent) mixture at 300°C. Absorption onset values of 1.28 eV and 3.11 eV are obtained for resulting Ge and Si colloids, respectively. By alloying these two materials in their nano-regime, tunable optical properties can be achieved throughout the visible to the near IR region by simply varying their elemental compositions. The success of this bandgap engineering process offers more options for new material design by taking advantage of unique properties from each component material.

Earth-abundant first-row transition metals have seen a renaissance in chemistry in recent years due to their relatively low toxicity and cost in comparison to precious metals. Furthermore open-shell transition metal complexes exhibit useful one-electron redox processes which contrasts to their heavier d block anologues. This thesis aims to synthesize and analyse the structure and reactivity of low-coordiante first-row transition metal complexes of from groups 7-9 with an aim to utilize these species in catalysis. The divalent compound [Co{N(SiMe3)2}2] reacts with the primary phosphines PhPH2 in the presence of an NHC ligand (IMe4) to yield the phosphinidene bridged dimer [(IMe4)2Co(µ-PMes)]2. The complex has interesting magnetic properties due to strong antiferromagnetic coupling between the two cobalt(II) centres. Increasing the steric bulk of the NHC yielded carbene-phosphinidene adducts (NHC·PAr). This transformation was shown to be catalytic. The structure and reactivity of complexes of the type [(NHC)xMn{(N(SiMe3)2}2] were investigated. The complexes exhibit similar structural properties to their iron and cobalt analogues; however their reactivity has been shown to differ. The addition of primary phosphines to complexes of the type [(NHC)xMn{N(SiMe3)2}2] yielded a range of manganese phosphide complexes. [Mn{N(SiMe3)2}2] also reacts with imidazolium salts at elevated temperatures to yield heteroleptic manganese NHC complexes. The reaction of [Mn{N(SiMe3)2}2] with IPr·HCl afforded the abnormal carbene complex [(aIPr)Mn{N(SiMe3)2}µ-Cl]2. A new monoanionic bidentate ligand is reported which has shown to be a useful ligand system to stabilize three-coordiante iron(II) complex. The reaction of [(L)Fe(Br)] with mesitylmagnesium Grignard or n-butyllithium yield the iron hydrocarbyls [(L)Fe(Mes)] and [(L)Fe(nBu)] with the latter being stable to β-hydrogen elimination. Finally [(L)Fe(nBu)] has been utilized as a pre-catalyst in the hydrophosphination of internal alkynes, showing selectivity for the E-isomeric vinylphosphine.

<p>Future energy systems based on hydrogen as energy carrier require reliable ways for storing hydrogen gas in safe, clean and efficient ways. Metal hydrides absorb hydrogen gas reversibly, making them suitable for storage applications. Investigations of the crystal structures of these materials contribute to an understanding of the factors which can influence the absorption<i>. </i></p><p>Three systems, Ti₃Sn-D, Nb₄MSi-D (M=Co or Ni) and Pd-Ni-P, have been investigated in this thesis. Various solid state synthesis techniques have been used for sample preparation. The crystal structures have been studied using x-ray and neutron diffraction techniques.</p><p>Three metal hydride phases were found in the Ti₃Sn-D system upon hydrogenation. Deuterium occupies titanium octahedra and the applied deuterium pressure induces the phase transitions. The distances between the deuterium atoms increase from 2.47 Å in orthorhombic Ti₃SnD_0.80 to 4.17 Å in cubic Ti₃SnD.</p><p>The Nb₄MSi-D system (M=Co or Ni) readily absorbs deuterium at room temperature and 90 kPa deuterium pressure to give a deuterium content of Nb₄MSiD_~2.5. Two interstitial voids, both coordinated by four niobium atoms arranged in a tetrahedral configuration, accommodate deuterium atoms. </p><p>Two ternary phases and a solid solution of nickel in Pd₃P have been synthesised and the crystal structures determined. PdNi₂P is orthorhombic and crystallises in the MgCuAl₂-type structure: an ordered derivative of the Re₃B-type structure. Pd₈Ni₃₁P₁₆ is a tetragonal high-temperature phase stable at 700°C with 110 atoms in the unit cell. Pd_2.7Ni_0.3P_0.94 has the cementite-type structure with mixed occupancy of palladium and nickel at one of the two non-equivalent crystallographic metal positions.</p>

Future energy systems based on hydrogen as energy carrier require reliable ways for storing hydrogen gas in safe, clean and efficient ways. Metal hydrides absorb hydrogen gas reversibly, making them suitable for storage applications. Investigations of the crystal structures of these materials contribute to an understanding of the factors which can influence the absorption. Three systems, Ti3Sn-D, Nb4MSi-D (M=Co or Ni) and Pd-Ni-P, have been investigated in this thesis. Various solid state synthesis techniques have been used for sample preparation. The crystal structures have been studied using x-ray and neutron diffraction techniques. Three metal hydride phases were found in the Ti3Sn-D system upon hydrogenation. Deuterium occupies titanium octahedra and the applied deuterium pressure induces the phase transitions. The distances between the deuterium atoms increase from 2.47 Å in orthorhombic Ti3SnD0.80 to 4.17 Å in cubic Ti3SnD. The Nb4MSi-D system (M=Co or Ni) readily absorbs deuterium at room temperature and 90 kPa deuterium pressure to give a deuterium content of Nb4MSiD~2.5. Two interstitial voids, both coordinated by four niobium atoms arranged in a tetrahedral configuration, accommodate deuterium atoms. Two ternary phases and a solid solution of nickel in Pd3P have been synthesised and the crystal structures determined. PdNi2P is orthorhombic and crystallises in the MgCuAl2-type structure: an ordered derivative of the Re3B-type structure. Pd8Ni31P16 is a tetragonal high-temperature phase stable at 700°C with 110 atoms in the unit cell. Pd2.7Ni0.3P0.94 has the cementite-type structure with mixed occupancy of palladium and nickel at one of the two non-equivalent crystallographic metal positions.

In this thesis, the feasibility of employing organometallic single-source precursors in the preparation of advanced transition metal pnictide materials such as colloidal nanoparticles and films has been investigated. In particular, the ternary FeMnP phase was targeted as a model for preparing advanced heterobimetallic phosphide materials, and the iron-rich Fe 3 P phase was targeted due to its favorable ferromagnetic properties as well as the fact that the preparation of advanced Fe 3 P materials has been elusive by commonly used methods. Progress towards the synthesis of advanced Fe 2-x Mn x P nanomaterials and films was facilitated by the synthesis of the novel heterobimetallic complexes FeMn(CO) 8 (μ-PR 1 R 2 ) (R 1 = H, R 2 = H or R 1 = H, R 2 = Ph), which contain the relatively rare μ-PH2 and μ-PPhH functionalities. Iron rich Fe 2-x Mn x P nanoparticles were obtained by thermal decomposition of FeMn(CO) 8 (μ-PH 2 ) using solution-based synthetic methods, and empirical evidence suggested that oleic acid was responsible for manganese depletion. Films containing Fe, Mn, and P with the desired stoichiometric ratio of 1:1:1 were prepared using FeMn(CO) 8 (μ-PH 2 ) in a simple low-pressure metal-organic chemical vapor deposition (MOCVD) apparatus. Although the elemental composition of the precursor was conserved in the deposited film material, spectroscopic evidence indicated that the films were not composed of pure-phase FeMnP, but were actually mixtures of crystalline FeMnP and amorphous FeP and Mn x O y . A new method for the preparation of phase-pure ferromagnetic Fe 3 P films on quartz substrates has also been developed. This approach involved the thermal decomposition of the single-source precursors H 2 Fe 3 (CO) 9 PR (R = t Bu or Ph) at 400 °C. The films were deposited using a simple home-built MOCVD apparatus and were characterized using a variety of analytical methods. The films exhibited excellent phase purity, as evidenced by X-ray diffraction, X-ray photoelectron spectroscopy, and field-dependent magnetization measurements, the results of which were all in good agreement with measurements obtained from bulk Fe 3 P. As-deposited Fe 3 P films were found to be amorphous, and little or no magnetic hysteresis was observed in plots of magnetization versus applied field. Annealing the Fe 3 P films at 550 °C resulted in improved crystallinity as well as the observation of magnetic hysteresis.

This study considered the potential use of lignin as possible renewable fuel and chemical feedstock source. Among the various polymers present in lignocellulosic biomass, the polyaromatic lignin is the one component that is most chemically similar to petroleum. However, it still contains a much larger amount of oxygen compared to crude oil. As such, two strategies were employed in this study: (1) studying the lignin depolymerization in the presence of high temperature and base catalysts; and, (2) employing hydrodeoxygenation as a means to decrease the O/C ratio in lignin-derived model compounds. The base-catalyzed depolymerization (BCD) of organosolv lignin was done in a 500-mL Monel Parr reactor at temperatures ranging from 165°C to 350°C. Complete solubilization of lignin derivatives was possible in the presence of NaOH and KOH, except at 350°C. NMR experiments revealed formation of oxidized groups (carboxylic and hydroxyl groups) as well as alkyl groups. On the other hand, the use of NH4OH showed N incorporation. Identified and quantified DCM-soluble monomeric compounds were at most 6% of the starting material and are mainly phenolic. This study revealed the apparent susceptibility of syringyl units over guaiacyl units in BCD. This could in turn guide the choice of substrate on which base-catalyzed depolymerization could be applied. Syringaldehyde was used as the starting material to study batch hydrodeoxygenation (HDO) using several non-cobalt/molybdenum based catalysts. A 50-ml Parr reactor was used, pressurized by 1000 psig of H2 and heated to 300°C. Nickel based catalysts (nickel phosphide, nickel oxide and nickel phosphate) as well as supported precious metals (Pt and Pd) were tested as HDO catalysts. Of the three O-containing functional groups of syringaldehyde, the aldehydic group was found to be the most susceptible. In the presence of the Al2O3-supported catalysts, the methyl groups liberated were found to be incorporated back into the aromatic ring, forming alkylated compounds. In the last section of this dissertation, hydrothermally synthesized supported Ni on mesoporous silica (MCF) and acid catalysts (HY and H-Al-MCF) were used for probing the effect of bifunctional metal-acid catalysis on phenol hydrodeoxygenation/hydrogenation. Catalyst configurations were varied from the previously studied wet-impregnated Pt/HY catalyst. Based on a hypothesis that coking catalyzed by the acidic zeolite in the wet impregnated Pt/HY catalyst was the main cause of catalyst deactivation and decreased phenol conversion, separately synthesized metal and acid catalyst systems were tested. Complete phenol conversion was sustained for at least three times longer in a continuous flow reactor operated at 200°C and 0.79 MPa of flowing H2. The separation of the metal and acid sites generated a tunable system capable of producing cyclohexanol, cyclohexane or cyclohexene at very high selectivities, even achieving 99% selectivities for cyclohexane.

Depuis quelques années, les diodes électroluminescentes organiques (OLEDs) connaissent un véritable essor se traduisant par leur intégration progressive au sein d'appareils électroniques « grand public » : téléphones portables, téléviseurs, etc. En dépit d'avantages indéniables, des obstacles — notamment des coûts de fabrication élevés et des durées de vie insuffisantes — freinent encore l'adoption massive de cette technologie. Le remplacement de la couche émissive organique par des quantum dots pourrait résoudre tout ou partie de ces problèmes, tout en améliorant les performances des dispositifs « QD-LEDs » ainsi constitués.L'objectif de cette thèse consiste à élaborer, par voie colloïdale, des nanocristaux semi-conducteurs non toxiques et présentant toutes les caractéristiques requises pour leur intégration dans des QD-LEDs.Un protocole de synthèse de nanoparticules d'antimoniure d'indium (InSb) reposant sur l'injection du précurseur d'antimoine en phase gazeuse a tout d'abord été mis au point. Suite à l'optimisation des différents paramètres de réaction, les nanocristaux obtenus par cette voie présentent un certain nombre de qualités : bonne cristallinité, faible dispersion en taille et excellente stabilité en solution. En revanche, l'absence de photoluminescence — attribuée à la présence d'une coquille amorphe autour du cœur des particules — ne permet pas à l'heure actuelle d'exploiter pleinement ces nanocristaux dans des applications optiques.L'étude a ensuite été dirigée vers la production de quantum dots à base de phosphure d'indium (InP), afin de permettre la réalisation ultérieure d'un dispositif QD-LED fonctionnel. Grâce à l'élaboration de structures à gradient de composition, des nanocristaux dotés d'un fort rendement quantique de photoluminescence ainsi que d'une excellente stabilité en milieu oxydant ont pu être élaborés.Enfin, des essais préliminaires portant sur l'intégration des nanocristaux à base de phosphure d'indium dans des diodes électroluminescentes ont été menés. Le dépôt des quantum dots a été réalisé selon la technique dite de « LANGMUIR-SCHAEFFER stamping » tandis que les autres couches présentes dans l'empilement — à base de petites molécules — ont été élaborées par évaporation. En dépit de performances encore modestes, l'émission des QD-LEDs ainsi produites présente toutefois une nette contribution provenant de la couche de nanocristaux Ces résultats ouvrent ainsi la voie à de nouveaux développements très prometteurs. / During the past few years, organic light-emitting devices (OLEDs) gradually appeared in consumer electronics such as smartphones and television sets. Unfortunately, the OLED market is still curbed by some drawbacks of this technology — namely high manufacturing costs and limited lifetime. By replacing the organic emitting layer by quantum dots, one could expect to partially solve these problems and further improve the performances of the so-called QD-LED devices.The aim of this study is to produce semiconductor nanocrystal quantum dots which are non-toxic and exhibit all the required features for their successful integration inside QD-LED structures.A new approach for the synthesis of colloidal indium antimonide (InSb) nanocrystals relying on the use of a gaseous antimony precursor was firstly developed. Thanks to the optimization of several reaction parameters, the nanocrystals obtained by this pathway exhibit a good crystallinity, a reduced size dispersion, and are highly stable in solution. Unfortunately, no photoluminescence signal was recorded — probably because of an amorphous shell surrounding the particle cores — so these nanocrystals cannot be used for optical applications.Then, we investigated the chemical synthesis of indium phosphide (InP) based quantum dots likely to yield a working QD-LED prototype. Owing to composition gradient shells, we produced nanocrystals exhibiting a high photoluminescence quantum yield and a good stability in oxygen-rich medium.Finally, we made several preliminary attempts in order to integrate indium phosphide based nanocrystals in light-emitting diodes. The quantum dot films were deposited by the “Langmuir-Schaeffer stamping” technique while the other layers made of small molecules were evaporated. Despite its still modest performances, the emission of the elaborated QD-LEDs shows a neat contribution from the embedded quantum dots. These results open the way for future developments.

abstract: It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch (~0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation during GaP epitaxial growth on Si by MBE were proposed. To achieve high performance of GaP/Si solar cells, different GaP/Si structures were designed, fabricated and compared, including GaP as a hetero-emitter, GaP as a heterojunction on the rear side, inserting passivation membrane layers at the GaP/Si interface, and GaP/wet-oxide functioning as a passivation contact. A designed of a-Si free carrier-selective contact MoOx/Si/GaP solar cells demonstrated 14.1% power conversion efficiency. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2017

Le phosphure d’indium (InP) est un semiconducteur III-V aux propriétés adaptées aux applications optoélectroniques. Toutefois, son oxydation spontanée à l’air engendre une dégradation de ses propriétés électriques. La passivation de sa surface devient donc une étape clé pour son intégration dans des dispositifs optoélectroniques attractifs. Dans le cadre de ce travail de thèse, nous nous sommes intéressés à l’étude de la passivation de surface de InP par nitruration. Nous avons réalisé de manière reproductible la formation d’un film de type polyphosphazène ( H2N-P=NH )n sur InP par voie électrochimique dans l’ammoniac liquide (-55°C). Le suivi de la croissance du film sur InP a été effectué grâce au couplage systématique de mesures électrochimiques (J = f(E), J = f(t), E = f(t) et C = f(E)) avec des analyses de composition chimique de surface par XPS (X-ray photoelectron spectroscopy). Chacune de ces techniques apporte des éléments sur la compréhension du mécanisme de nitruration de la surface de InP en solution (anodisation en milieu NH3 liq), nous permettant ainsi de proposer un mécanisme de formation du film de phosphazène de type ECE « Electrochimique-Chimique-Electrochimique ». L’étude par XPS de la stabilité à l’air de la composition chimique de surface de InP traité a révélé le caractère protecteur du film. La valeur élevée de la capacité interfaciale après traitement anodique suggère que l’interface modifiée (de type Electrolyte-Insulator-Semiconductor) est en régime d'accumulation et se comporte comme un « vrai » condensateur. / Indium phosphide (InP) is a III-V semiconductor, which represents an ideal candidate for optoelectronic applications. However, its spontaneous oxidation in air leads to the loss of its electrical properties. The surface passivation becomes a key step for its integration in attractive optoelectronic devices. As part of this thesis, we are interested in studying the passivation of the InP surface by nitridation. We reproducibly realized the formation of a polyphosphazene-like (H2N-P=NH)n film on InP by electrochemical treatment in liquid ammonia (-55°C). The monitoring of the film formation was performed using a systematic coupling between electrochemical measurements (J = f(E), J = f(t), E = f(t), and C = f(E)) and XPS analysis (X-ray photoelectron spectroscopy) to follow the chemical composition of the surface. These techniques provide some answers about the nitridation mechanism of InP surface by a wet process (anodization in NH3 liq), leading to the formation of the phosphazene film through an ECE mechanism “Electrochemical-Chemical-Electrochemical”. The study of the air ageing of the modified surface using XPS analysis revealed the protective nature of the film. The high value of the interfacial capacity after the anodic treatment suggests that the modified interface (Electrolyte-Insulator-Semiconductor-like) is in accumulation state and behaves like a "real" capacitor.