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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
81

A novel optical bio-chemical sensor based on hybrid nanostructures of Bowtie nanoantennas and Fabry-Perot Interferometer

Liu, Huanhuan 20 November 2013 (has links) (PDF)
Nowadays, the increasing concern for environmental analysis and food quality control, as well as medical needs such as fast diagnosis in case of emergency events, leads to a growing need for new generations of chemical and biological sensors. These devices should have high sensitivity and reliability, perform specific detection of molecules and enable multiple parallel sensing, while being cheap, portable, fast and easy to use. Thus, a general trend tends towards bio-chemical sensors which are on-chip integrated, label-free, and compatible with standard micro-technologies. Photonic dielectric devices based on porous silicon and metallic nanostructures based on plasmon resonances are good candidates to fulfill the above requirements. Porous silicon is a biocompatible material, with a huge specific surface providing a sensitivity enhancement by several orders of magnitude compared to bulk materials; furthermore, its refractive index and thickness can be easily tuned, enabling for the realization of a large variety of photonic designs. Metallic nanostructures provide high confinement and strong field enhancement in sub-wavelength regions, leading to high sensitivities; combined with fluorescence or other sensing mechanisms such as Raman or IR spectroscopy, they have already demonstrated increased sensing potential. The realization of a hybrid device combining both elements would be highly interesting, since it could yield the advantages of both elements, and the photonic structure could shape the plasmonic resonance to develop ultrasensitive devices with narrow resonance linewidth and increased sensing depth. In this context, we realized and studied a novel hybrid photonic / plasmonic device exploiting the coupling between the surface plasmon resonance of a bowtie nano - antenna (NAs) array and the photonic modes of porous silicon (PSi) interferometer. We designed and fabricated a NAs array with resonance wavelength ~ 1.3μm on a homogeneous PSi interferometer. A thin spacing silica layer with controllable density protects the pores of PSi layer and provides a smooth surface for the fabrication of NAs. The coupling mechanisms of two elements - NA array and interferometer, are studied with 2 models, which are interferometer approach and resonator approach. The interferometer approach is focused on studying the influence of NAs array as a homogeneous layer on the fringes shift of the interferometer. For resonator approach, the coupled mode theory is applied. With these models, strong coupling between both elements are discovered: splitting. In the case of viii smaller environment variation, the hybrid device gains 5-10 fold sensitivity enhancement vs. 2 elements alone. The controllable SiO2 layer allows us to sense the index variation within PSi interferometer. This opens a route towards double parallel sensing. The development of the theoretical models under different environment is ongoing, which is expected to utilize the strong coupling for the sensing. A further investigation of the sensing potential of the hybrid device would be expected. And the 2 elements constituting the hybrid structure - the interferometer and the NA array - could be modified in order to enlarge the study to a wider family of devices with greater properties and performances. This work was performed within the framework of the program "Groups of Five Ecoles Centrales" between China Scholarship Council (CSC) and Lyon Institute of Nanotechnologies (INL, CNRS UMR 5270). The project has been supported by the Nanolyon technology platform at INL.
82

Intégration monolithique de composants bipolaires et de circuits radiofréquences sur substrats mixtes silicium/silicium poreux / Monolithic integration of bipolar devices and radiofrequency circuits on porous silicon/silicon hybrid substrates

Capelle, Marie 17 December 2013 (has links)
Le récent essor des systèmes de communication sans fil implique le développement de circuits RF performants, à fort taux d’intégration, bas coût, et adaptés à la production de masse. L’intégration monolithique de systèmes RF sur silicium permet de répondre en partie à ces critères. Cependant, le silicium est responsable de pertes dans le substrat dégradant les performances des composants passifs. Pour adresser cette limite, des caissons isolants de silicium poreux peuvent être réalisés au sein du silicium (substrat mixte). Les objectifs de cette thèse sont de montrer la faisabilité de l’intégration monolithique sur substrat mixte et d’étudier son impact sur les performances de circuits RF. Ce manuscrit décrit l’élaboration des substrats mixtes et donne une comparaison des performances de composants passifs intégrés sur silicium poreux et sur substrats standards. Enfin, l’intégration monolithique de circuits RF est menée sur substrat mixte 6’’. La caractérisation de ces démonstrateurs montre une amélioration des performances par rapport au silicium. De plus, la compatibilité du substrat mixte avec un procédé industriel de microélectronique est validée. / The rapid growth of wireless systems involves the development of highly efficient, large-scale, low-cost and radio frequency (RF) systems. Monolithic integration of RF circuits on silicon can enhance the appeal of this technology further. However, in order to fully realize the next generation of system-on-chip on silicon, the losses which results in to degradation in the performances of passive components need to be addressed. This work investigates locally insulating porous silicon regions on silicon substrates, targeting highly efficient passive components. This thesis begins with a detailed description of porous silicon/silicon hybrid substrate fabrication using a novel mask. The influence of the hybrid substrate on fabricated passive device performances was studied and the results were compared to similar devices on conventional silicon substrates. Finally, monolithic integration of passive and active devices was demonstrated on 6” hybrid substrates, with performance improvements when compared with standard silicon. This work has also shown that hybrid substrates can be fully integrated into industrial scale microelectronic processes.
83

Réalisation de périphéries innovantes de TRIAC par thermomigration d'aluminium et insertion de silicium poreux / Realization of TRIAC's innovative peripheries via aluminum thermomigration and insertion of porous silicon

Lu, Bin 14 June 2017 (has links)
Cette thèse est dédiée à l’étude, à la réalisation et à la caractérisation de nouvelles périphéries de TRIAC. L’objet de cette recherche est de réduire l’espace occupé par la périphérie en tentant de conserver le même niveau de performances au blocage. Deux voies d’amélioration ont été poursuivies : l’une concerne la réalisation de caissons d’isolation par thermomigration d’aluminium, l’autre implique l’intégration du silicium poreux dans le caisson d’isolation. La thermomigration d’aluminium est une technique attractive permettant de remplacer les techniques de diffusion conventionnelles. Son industrialisation subit cependant quelques verrous technologiques, notamment le retrait des résidus aluminés et la formation de billes. Deux procédés de gravure ont été développés en vue d’enlever sélectivement l’ensemble de résidus. L’origine des billes a été analysée à l’aide d’observations expérimentales et de modélisations numériques. En utilisant un motif incluant des trous carrés aux intersections, des résultats encourageants ont été démontrés malgré une uniformité thermique encore optimisable. La deuxième voie d’innovation consiste à profiter des propriétés diélectriques du silicium poreux. Un procédé de masquage par fluoropolymère a été développé pour la localisation du silicium poreux. Les conditions d’anodisation adéquates ont été déterminées. La caractérisation de prototypes a montré des tenues au blocage largement améliorées par rapport à l’étude précédente. Bien que les tenues en tension nécessaires n’aient pas été atteintes, des courants de fuite inférieures à 10 μA ont été constatés jusqu’à plusieurs centaines de volts. / This thesis is dedicated to the study, the realization and the testing of “Planar” type TRIAC with novel peripheries. The aim of this research is to shrink the device periphery while maintaining the same level of blocking performances. Two paths of innovation have been pursued: one concerning Al-Si thermomigration for the production of through-wafer isolation walls, and the other involving porous silicon and its integration in the isolation walls. Al-Si thermomigration is an attractive mean allowing to replace conventional diffusion technologies. However, several remaining issues, such as the removal of the unintentional residues and the ball formation phenomenon, block its commercial application. Two different etching procedures have been developed in order to selectively remove all residues. The origin of the ball phenomenon has been analyzed using experimental observations and numerical modeling. By using a new pattern including square holes at intersections, encouraging results have been demonstrated in spite of an optimizable thermal uniformity. The second way of innovation is to take advantage of the dielectric properties of the porous silicon. A fluoropolymer masking process has been developed for local porous silicon formation. The appropriate anodization conditions have been determined. The characterization results showed improved blocking performances compared to the previous study. Although the necessary voltage requirements are not met, leakage currents of less than 10 μA have been observed up to several hundred volts.
84

Estruturas multicamadas de silício poroso para aplicação em dispositivos de cristais fotônicos. / Porous silicon multilayers structures for application in photonic crystals device.

Danilo Roque Huanca 18 May 2007 (has links)
O objetivo do presente trabalho foi o estudo e análise da resposta óptica de dispositivos de cristal fotônico uni-dimensional (1D) fabricados através do uso da tecnologia de silício poroso. Os resultados obtidos neste trabalho apresentam contribuições significativas no desenvolvimento de uma tecnologia para a fabricação de dispositivos ópticos em silício. As principais contribuições deste trabalho estão direcionadas ao aprimoramento dos processos de fabricação de cristais fotônicos 1D e processos de tratamento térmico. Os resultados da análise estrutural através de microscopia óptica de varredura (MEV) e da resposta óptica (refletância ou absorbância) mostraram que dispositivos de cristal fotônico fabricados em soluções altamente diluídas de HF apresentam melhor desempenho, tendo sido otimizado o processo de fabricação utilizando-se uma célula de duplo compartimento (célula dupla). A otimização da resposta óptica dos dispositivos foi atribuída ao efeito de minimização das rugosidades de interface e minimização de efeitos de anisotropia na taxa de corrosão durante o processo de anodização eletroquímica. O processo eletroquímico utilizado para a fabricação de cristais fotônicos 1D apresentou limitação quanto ao número máximo de camadas, sendo observado que dispositivos com número de camadas acima de 60 apresentavam degradação das suas camadas superficiais, comprometendo a resposta óptica do dispositivo. Este resultado foi atribuído a efeitos de diluição química das camadas expostas à solução por longos períodos de processo. Os dispositivos fotônicos 1D mostraram-se sensíveis a processos de recozimento térmico, deslocando suas bandas fotônicas proibidas para regiões de menor comprimento de onda devido à mudança do índice de refração das camadas e aos efeitos de expansão e compressão das camadas constitutivas do dispositivo. Os dispositivos de micocavidade Fabry-Perot mostraram-se mais sensíveis aos processos de recozimento térmico. Os resultados obtidos no presente trabalho vislumbram grandes possibilidades de aplicação dos cristais fotônicos de PS na fabricação de dispositivos ópticos na tecnologia de silício como filtros, lentes, cavidades ressonantes, guias de ondas, grades de difração e dispositivos sensores. / The aim of the present work was to study and analyze the optical response of one- dimensional (1D) photonic crystal devices obtained by using the porous silicon technology. The experimental results obtained from this work showed the significant contribution to the development of a technological process for optical device fabrication in the silicon substrate. The most important contributions of the work are pointed out to improve the electrochemical process for device fabrication and thermal annealing process in order to improve the optical response of the devices. The results obtained from Scanning electronic microscopy (SEM) and from the optical response of the devices, showed that devices fabricated in the double cell and diluted HF solution improved their optical response due to minimization of the anisotropy of corrosion rate and decreasing of the surface roughness between layers. The electrochemical process used for device fabrication showed the existence of limitation on the numbers of layers because of the existence of chemical dissolution effect that became important for long time process. The 1D photonic crystal devices in PS technology showed high sensibility to thermal annealing process, due to the refraction index change after thermal annealing the photonic band gap position shift down to low wavelength region. The Fabry-Perot devices showed higher sensibility to thermal annealing process improving their optical response after annealing process. The results obtained from the present work showed that the PS 1D photonic device could be applied to optical devices fabrication in silicon technology such as optical filters, lenses, resonant cavities, wave-guide devices, diffraction grade and optical sensor device.
85

Transporte eletrÃnico em semicondutores porosos baseado na equaÃÃo de Schrodinger dependente do tempo. / Electronic transport in porous semiconductors based in time dependent Schrodinger equation.

Francisco Wellery Nunes Silva 16 February 2012 (has links)
Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico / Neste trabalho, propomos um uma pesquisa teÃrica onde estudamos as propriedades de um pulso eletrÃnico em uma camada de silÃcio poroso, injetado sob uma certa voltagem externa V. Desta forma, podemos definir fundamentalmente a forma das curvas T X V e R X V, onde T à o coeficiente de transmissÃo e R à o coeficiente de reflexÃo do pacote de onda atravÃs da regiÃo porosa. Aliado a estes dados, podemos fazer um cÃlculo simples e obter informaÃÃes a respeito da corrente elÃtrica que atravessa o material, utilizando o modelo I=Q/t, onde definimos o tempo como o intervalo necessÃrio para que o pulso seja consumido completamente, como proposto por Lebedev e colaboradores (1998). Utilizando a definiÃÃo para mobilidade de portadores de carga, obtivemos informaÃÃes sobre a mesma, pois este trabalho foca-se principalmente no estudo do transporte eletrÃnico neste tipo de material poroso, que apesar de um estudo intenso em silÃcio poroso desde o inÃcio da dÃcada de noventa, as propriedades de transporte ainda permanecem um pouco inexploradas. O principal incentivo para que estudemos este material à devido à grande possibilidade da criaÃÃo de dispositivos em opto-eletrÃnica tais como LEDs (Light Emissor Diode). Ao longo do desenvolvimento, empregamos tÃcnicas jà bem conhecidas para a modelagem de semicondutores, como a teoria da massa efetiva, por exemplo, associadas a tÃcnicas de modelagem computacional, como o emprego de condiÃÃes periÃdicas de contorno e condiÃÃes de contorno absorvente. Por se tratar de um sistema quÃntico, tudo parte da soluÃÃo da equaÃÃo de SchrÃdinger dependente do tempo, e para executar esta tarefa fizemos uso de um mÃtodo numÃrico conhecido como Split-Operator. Assim obtemos as soluÃÃes para a equaÃÃo. Inicialmente, os cÃlculos realizados neste trabalho foram baseados em uma massa efetiva isotrÃpica, a fim de otimizar os parÃmetros de cÃlculo, e sà em seguida foram feitos cÃlculos baseando-se em massa efetiva anisotrÃpica para os diversos vales do silÃcio poroso. Tudo isto nos leva a crer que este trabalho possui uma grande importÃncia no que diz respeito à contribuiÃÃo para o entendimento do transporte eletrÃnico em sistemas baseados em silÃcio poroso, de forma a manter por mais algum tempo a aplicaÃÃo deste tipo de material que foi tÃo revolucionÃrio no sÃculo XX. / We propose in this work a theoretical study, of the properties of a electronic pulse, injected under a external bias, on a porous silicon layer, so that we could define fundamentally the shape of T X V and R X V curves, where T is the transmission coefficient and R is the reflection coefficient of the wave packet, trough the porous region. With this, we could make a simple calculation and obtain information about the electrical current in this material, using the very simple model I=Q/t, where we defined the time of transmission, as the time interval necessary for the electronic pulse to be consumed completely. This kind of approach is already known in the literature, propose by Lebedev and co-workers (1998). Using the definition of charge carrier mobility, we obtained information about it, since the principal aim of this work is the electronic transport in this kind of material, that despite a strong research on porous silicon, since the beginning of the nineties, the transport properties still remains a relatively unexplored area. The major incentive for this study is due to the strong possibility of application of this material in new optoelectronic devices such as LEDs. Along the development of this dissertation, we applied well known techniques for the computational modelling such as effective mass theory, for example, associated with methods like the periodic boundary conditions, and the absorbing boundary conditions. Treating of a quantum system, we begin all the work solving the time dependent SchrÃedinger equation. To do this task, we have used the numerical method known as Split-Operator, in order to obtain the solutions for this equation. Initially, the calculations in this dissertation where based in an isotropic effective mass, in order to optimise the calculation parameters. After this, we made calculations using an anisotropic effective mass for the different valleys of silicon. All these things leads us to believe that this work have a great importance regarding the contribution to the understanding of transport in electronic systems based on porous silicon, to maintain for some time the applications of this kind of material that was so revolutionary in the twentieth.
86

Nanoestruturas metálicas e de silício para intensificação de campo próximo. / Metal and silicon nanostructures to near-field intensification.

Daniel Scodeler Raimundo 08 October 2009 (has links)
Durante os últimos cinco anos, a nanotecnologia tem atingido avanços significativos em diversas áreas da ciência e tecnologia. Um dos assuntos que está sendo intensamente estudado pela comunidade científica é a intensificação de campo próximo (hot spot) que pode ser aplicada em dispositivos sensores com capacidade de detecção de apenas uma molécula e em nano-antenas ópticas aplicadas na fabricação de dispositivos plasmônicos. Neste sentido, as principais contribuições da presente tese são processos de fabricação de nanoestruturas metálicas e de silício e o estudo da intensificação de campo próximo denominada de pontos quentes (hot spots) nestas estruturas. As nanoestruturas metálicas de Au (ouro) foram obtidas a partir do processo de auto-organização de esferas de poliestireno. As esferas de poliestireno serviram como camada sacrificial (molde) para a obtenção de nanoestruturas metálicas organizadas. Sobre as estruturas de Au organizadas foram depositadas moléculas de cristal violeta para serem utilizadas como moléculas de prova (sondas) no monitoramento da existência dos pontos quentes com o auxílio do espalhamento Raman das moléculas. As nanoestruturas de Au possibilitaram uma intensificação do espalhamento Raman devido à intensificação do campo próximo na superfície metálica periódica de Au. As nanoestruturas e microestruturas de silício foram obtidas a partir da tecnologia de silício poroso. As propriedades do silício poroso foram moduladas através da implantação de íons de hidrogênio (H +) que possibilitou a formação de silício microporoso com forte emissão fotoluminescente (PL) e intensificação do espalhamento Raman superficial devido ao fenômeno de Raman ressonante. Sobre as estruturas macroporosas de silício foram adsorvidas moléculas de azul de metileno para serem utilizadas como moléculas de prova para monitoramento da intensificação do campo próximo e do efeito SERS no silício. A obtenção da intensificação de campo próximo em silício é uma contribuição completamente inédita, pois este fenômeno devia-se, até o momento, somente a materiais metálicos (nanoestruturas metálicas), mostrando sua existência também no silício. / During the last five years, nanotechnology has achieved significant progress in several areas of science and technology. One of the issues that are being intensively studied by the scientific community is the intensification of near-field (hot spot) that can be applied to devices with sensors capable of detecting a single molecule and nano-optical antennas used in the fabrication of plasmonic devices. In this sense, the main contributions of this thesis are processes for manufacture of metal and silicon nanostructures and the study of near-field intensification called hot spots in these structures. The metal nanostructures of Au (gold) were obtained from the process of self-assembling of polystyrene beads. The polystyrene beads were used as sacrificial layer (mold) for obtaining organized metallic nanostructures. On the structures of organized Au were deposited molecules of violet crystal to be used as proof of molecules (probes) to monitor the existence of hot spots with the help of Raman scattering of molecules. The Au nanostructures allowed an intensification of the Raman scattering due to the intensification of the near-field in the periodic Au surface. The microstructures and nanostructures of silicon were obtained using the porous silicon technology. The properties of porous silicon were modulated by the implantation of hydrogen ions (H +) that allowed the formation of microporous silicon which showed high photoluminescence emission (PL) and Raman scattering intensification of the surface due to the phenomenon of resonant Raman. Methylene blue molecules were adsorbed on the macroporous silicon structures to be used as probe molecule for the monitoring of near-field intensification and the SERS effect in silicon. The obtaining of near-field intensification in silicon is an entirely unprecedented contribution, because this phenomenon had been observed, so far, only on the metallic materials (metal nanostructures), showing its existence in the silicon too.
87

The microstructural investigation of continuous-wave laser irradiated silicon rich silicon oxide

Wang, Nan 19 December 2017 (has links)
No description available.
88

Raman And X-Ray Photoemission Spectroscopic Studies Of Nanoparticles

Roy, Anushree 04 1900 (has links) (PDF)
No description available.
89

Explorando novas metodologias em espectrometria de massas com ionização ambiente e fluorescência de raios X por dispersão em energia / Exploring new methodologies in ambient ionization mass spectrometry and energy dispersive X-ray fluorescence

Schwab, Nicolas Vilczaki, 1986- 25 February 2015 (has links)
Orientadores: Marcos Nogueira Eberlin, Maria Izabel Maretti Silveira Bueno / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Química / Made available in DSpace on 2018-08-27T15:37:04Z (GMT). No. of bitstreams: 1 Schwab_NicolasVilczaki_D.pdf: 3814064 bytes, checksum: 830504748a20c22da41317192a1c7d9b (MD5) Previous issue date: 2015 / Resumo: O atual avanço na tecnologia em instrumentação analítica permite análises químicas cada vez mais rápidas e eficientes. Assim, o desenvolvimento de métodos que consistem em minimizar ou eliminar o preparo de amostra apresentam um grande diferencial em relação aos procedimentos tradicionais. Duas técnicas se destacam nesse sentido: a espectrometria de massas com ionização ambiente e a fluorescência de raios X por dispersão em energia. Com características distintas, essas técnicas abrangem um enorme campo de aplicações na ciência. Seguindo este conceito, esta tese de doutorado está dividida em três partes, que ilustram as diferentes aplicações utilizando uma das técnicas mencionadas. Primeiramente, foi relatada a produção e caracterização de superfícies funcionalizadas à base de silício poroso, como substrato para espectrometria de massas com ionização ambiente por dessorção via electrospray (DESI-MS). Os resultados encontrados mostraram que estas superfícies são excelentes alternativas como substrato para análises em DESI-MS, levando a baixos limites de detecção, eliminação de problemas referentes à contaminação cruzada e melhora na estabilidade do sinal analítico. O capítulo seguinte descreve o desenvolvimento de uma fonte portátil para ionização ambiente de moléculas por espectrometria de massas, que elimina a necessidade do uso de cilindros de gás e bombas injetoras. Sua eficiência foi comprovada por meio de análises de diversos compostos, gerando expectativas futuras para aplicações em campo, para resolução de casos analíticos conjuntamente com uso de equipamentos miniaturizados de espectrômetros de massas. Na parte final, foi demonstrado o uso da técnica de fluorescência de raios X na filatelia. Trata-se de uma técnica não destrutiva, onde, obteve-se o perfil elementar característico de diversas amostras de selos postais antigos como, por exemplo, os elementos relacionados à composição das tintas utilizadas na impressão. Como consequência, essa metodologia pode ser utilizada na discriminação em casos de falsificação de peças raras / Abstract: The advancement in analytical instrumentation allows today faster and more efficient chemical analysis. The development of new methods with regards to minimize or eliminate sample preparation steps has a great advantage over traditional procedures. Two techniques stand out in this concept: the ambient ionization mass spectrometry and energy dispersive X-ray fluorescence. With different characteristics, both techniques cover a huge range of applications in analytical chemistry. Following this idea, this thesis is divided into three parts that demonstrates some applications using the techniques mentioned earlier. The first chapter describes the production and characterization of functionalized porous silicon surfaces as substrates for desorption ionization electrospray mass spectrometry (DESI-MS). The results showed that specific surfaces provides an excellent alternative for spot analysis in DESI-MS, increasing detectability, eliminating cross-contamination problems and improving the analytical signal stability. The next chapter reports the development of a portable ambient ionization source for mass spectrometry, which eliminates the use of gas cylinders and injection pumps. Its efficiency was confirmed by analysis of several compounds leading to prospects for field applications; using for example with miniaturized mass spectrometers. Finally, the last chapter demonstrates the use of X-ray fluorescence in philately. The method developed is nondestructive and is a suitable technique to detect elements related with the composition of inks that are used to print stamps. For this reason, this is a powerful methodology to identify counterfeit samples of rare stamps mainly / Doutorado / Quimica Analitica / Doutor em Ciências
90

Structured Silicon Macropore as Anode in Lithium Ion Batteries

Sun, Xida 29 September 2011 (has links)
No description available.

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