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Ortsbasierte Dienste erfreuen sich in den letzten Jahren starker Beliebtheit. Für deren Umsetzung sind sog. Lokalisierungsdienste notwendig, welche eine Ortung von Mobilgeräten erlauben. Das GPS stellt den wohl populärsten Lokalisierungsdienst dar, ist jedoch innerhalb von Gebäuden nur sehr beschränkt einsetzbar. In der Vergangenheit wurden deshalb Methoden vorgeschlagen, die zur Positionsbestimmung auf die Messung der Empfangsfeldstärke von WLAN-Aussendungen zurückgreifen. Im Rahmen der Diplomarbeit soll untersucht werden, ob sich ebenfalls eine Postionsbestimmung anhand von Laufzeiten der WLAN-Signale umsetzen lässt. Bedingung hierbei ist, dass der Lokalisierungsdienst - eine reine Softwarelösung darstellt und keine Modifikationen an Hard- oder Firmware voraussetzt und - die Lokalisierung ohne für diese Zwecke ausgelegte Spezialhardware umsetzbar ist. Diese Anforderungen sollen sicherstellen, dass der zu entwickelnde Lokalisierungsdienst mit bereits installierter, handelsübliche Hardware umsetzbar ist. Es sind in Frage kommende Verfahren zur Bestimmung der Signallaufzeit zu erörtern. Für die Laufzeitmessung in Frage kommenden Zeitquellen sollen zugänglich gemacht und auf ihre Tauglichkeit untersucht werden. Durch Messreihen ist zu untersuchen, ob mit den vorgeschlagenen Messverfahren eine Lokalisierung möglich ist und in welchem Rahmen sich die zu erwartende Genauigkeit bewegt. Die in dieser Arbeit beschriebenen Konzepte sollen im Rahmen einer Proof of Concept Anwendung implementiert werden. Die Software soll unter dem Gesichtspunkt der Wiederverwendbarkeit entwickelt werden, um eine spätere Nutzung im Rahmen anderer Projekte zu ermöglichen.

Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

Network connectivity is a fundamental property affecting network performance. Given the reliability of each link, network connectivity determines the probability that a message can be delivered from the source to the destination. In this thesis, we study the directed network connectivity where the message will be forwarded toward the destination hop by hop, so long as the neighbor(s) is (are) closer to the destination. Directed connectivity, closely related to directed percolation, is very complicated to calculate. The existing state-of-the-art can only calculate directed connectivity for a lattice network up-to-the size of 10 × 10. In this thesis, we devise a new approach that is simpler and more scalable and can handle general network topology and heterogeneous links. The proposed approach uses an unambiguous hop count to divide the networks into hops and gives two steps of pre-process to transform hop-count ambiguous networks into unambiguous ones, and derive the end-to-end connectivity. Then, using the Markov property to obtain the state transition probability hop by hop. Second, with tens of thousands of Low Earth Orbit (LEO) satellites covering the Earth, LEO satellite networks can provide coverage and services that are otherwise not possible using terrestrial communication systems. The regular and dense LEO satellite constellation also provides new opportunities and challenges for network protocol design. In this thesis, we apply the directed connectivity analytical model on LEO satellite backbone networks to ensure ultra-reliable and low-latency (URLL) services using LEO networks, and propose a directed percolation routing (DPR) algorithm to lower the cost of transmission without sacrificing speed. Using Starlink constellation (with 1,584 satellites) as an example, the proposed DPR can achieve a few to tens of milliseconds latency reduction for inter-continental transmissions compared to the Internet backbone, while maintaining high reliability without link-layer retransmissions. Finally, considering the link redundancy overhead and delay/reliability tradeoff, DPR can control the size of percolation. In other words, we can choose a part of links to be active links considering the reliability and cost tradeoff. / Graduate

Radio wave propagation measurements provide a way to accurately and reliably characterize environments to assist in the development and optimization of wireless communication systems. As digital radio systems occupy wider bandwidths and use multipath signal combining to enhance quality of service, knowledge of time dispersion and the multipath structure of radio channels become increasingly important. The wideband measurement system presented herein provides a practical means to precisely measure the delays and strengths of individual multipath components which arrive at a radio receiver. Presented in this Thesis are fundamental theory, practical implementation, and simulation models for a sliding correlator measurement system. The sliding correlator technique is explained in detail and large-scale measurement survey is presented. Techniques for statistically quantifying the characteristics of propagation using the sliding correlator measurements are presented and compared. The development of simulations of the sliding correlator system is described, and simulation results are used to test conventional and newly developed post-processing algorithms. This Thesis presents a practical view of the sliding correlator measurement system, but its foundations are rooted in the theoretical results which are explained and derived herein. Propagation researchers and students in the wireless communication field may find this work and the cited references useful for continued study of wideband propagation measurements or for application of the sliding correlator system as a wideband measurement solution. / Master of Science

Clock Distribution Networks play a vital role in performance and reliability of a system. However, temperature gradients observed in 3D ICs hamper the functionality of CDNs in terms of varying skew and propagation delay. This thesis presents two compensation techniques, Adaptive Voltage and Controllable Delay, to overcome these problems. The compensation methods are validated using a FPGA-based test vehicle. Modification in traditional buffer design are also presented and the performance as well as the area and power overhead of both the implementations is compared.

This diploma thesis deals with design methods and optimization techniques of dynamic latched comparators. It compares latched and continuous comparators and describes their principle. Then it analyses three popular latched comparator structures with respect to offset, speed and kickback noise. It shows practical comparator design focused on offset precision.