Complex-oxides have seen an enormous amount of attention in the realm of Condensed Matter Physics and Materials Science/Engineering over the last several decades. Their ability to host a wide variety of novel physical properties has even caused them to be exploited commercially as dielectric, metallic and magnetic materials. Indeed, since the discovery of high temperature superconductivity in the “Cuprates” in the late 1980’s there has been an explosion of activity involving complex-oxides. Further, as the experimental techniques and equipment for fabricating thin films and heterostructures of these materials has improved over the last several decades, the search for new and more exotic properties has intensified. These properties stem from the interfaces formed by depositing these materials onto one another. Whether it be interfacial strain induced by the mismatch between the crystal structures, modified exchange interactions, or some combination of these and other interactions, thin films and heterostuctures provide an invaluable tool the modern condensed matter community. Simply put, a “complex-oxide” is any compound that contains Oxygen and at least two other elements; or one atom in two different oxidation states. Transition Metal Oxides (TMO’s) are a subset of complex-oxides which are of particular interest because of their strong competition between their charge, spin and orbit degrees of freedom. As we progress down the periodic table from 3d to 4d to 5d transition metals, the crystal field, electron correlation and spin-orbit energies become more and more comparable. Therefore, TMO thin films and heterostructures are indispensable to the search for novel physical properties. KTaO3 (KTO) is a polar 5d TMO which has been investigated for its high-k dielectric properties. It is a band insulator with a cubic perovskite crystal structure which is isomorphic to SrTiO3 (STO). This is important because non-polar STO is famous for forming a highly mobile, 2-Dimensional Electron Gas (2DEG) at the hetero-interface with polar LaAlO3 (LAO) as a result of the so-called “polar catastrophe”. Here, I use this concept of polarity to ask an important question: “What happens at hetero-interfaces where two different polar complex oxides meet?” From this question we propose that a hetero-interface between two polar complex-oxides with opposite polarity (I-V/III-III) should be impossible because of the strong Coulomb repulsion between the adjacent layers. However, we find that despite this proposed conflict we are able to synthesize KTO thin films on (110) oriented GdScO3 (GSO) substrates and the conflict is avoided through atomic reconfiguration at the hetero-interface. SrRuO3 (SRO) is a 4d TMO, and an itinerant ferromagnet that is used extensively as an electrode material in capacitor and transistor geometries and proof-of-concept devices. However, in the thin film limit the ferromagnetic transition temperature, TC, and conductivity drop significantly and even become insulating and lose their ferromagnetic properties. Therefore, we ask “Are the transport properties of SRO thin films inherently inferior to single crystals, or is there a way to maintain and/or enhance the metallic properties in the thin film limit?” We have fabricated SRO thin films of various thickness on GSO substrates (tensile strain) and find that all of our samples have enhanced metallic properties and even match those of single crystals. Finally, we ask “Can these enhanced metallic properties in SRO thin films allow us to observe evidence of a topological phase without the complexity of off-stoichiometry and/or additional hetero-structural layers?” Recent reports of oxygen deficient EuO films as well as hetero-structures and superlattices of SRO mixed with SrIrO3 or La0.7Sr0.3MnO3 have suggested that a magnetic skyrmion phase may exist in these systems. By measuring the Hall resistivity, we are able to observer a topological Hall effect which is likely a result of a magnetic skyrmion. We find that of the THE exists in a narrow temperature range and the proposed magnetic skyrmions range in size from 20-120 nm. Therefore, the SRO/GSO system can provide a more viable means for investigating magnetic skyrmions and their fundamental interactions.

Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies. Ferroelectric materials usually have high dielectric constant, and their dielectric properties are temperature and electric field dependent. The change in permittivity as a function of electric field is the key to a wide range of applications. Ferroelectric materials can be used to fabricate capacitors for electronic industry because of their high dielectric constant, and this is important in the trend toward miniaturization and high functionality of electronic products. The simple tunable passive component based on ferroelectric films is a varactor which can be made as a planar structure and used for electrically tunable microwave integrated circuits. It is an important task to sinter highly tunable and low loss ferroelectrics, fabricate and test the properties of microwave ferroelectric components. This thesis shows experimental results on growth, crystalline and microwave properties of Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), Ba0.5Sr0.5TiO3 (BST) as well as AgTaO3 (ATO), and AgNbO3 (ANO) thin films. The films were grown by Pulsed Laser Deposition (PLD) and rf-magnetron sputtering techniques from stoichiometric high density ceramic NKN, ATN, ATO, ANO and BST targets onto LaAlO3 (LAO), Al2O3 (r-cut sapphire), Nd:YAlO3 single crystals and amorphous glass substrates. Advanced X-ray diffraction examinations showed NKN, ATN, BST films on LAO substrates grow epitaxially, whereas films on r-cut sapphire were found to be preferentially (00l) oriented. Coplanar waveguide 2 µm finger gap interdigital capacitor (CPWIDC) structures were fabricated by photolithography process and metal lift-off technique. On-wafer tests up to 40 GHz were performed to characterize microwave properties of the ferromagnetic film CPWIDC devices. The measurement setup is composed of network analyzer, probe station, and microwave G-S-G probes. External electric field was applied to planar capacitors to measure tunability. Original de-embedding technique has been developed to calculate capacitance, loss tan δ, and tunability of varactors from the measured S-parameters. NKN film interdigital capacitors on Nd:YAlO3 showed superior performance compared to ATN in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40V, 200 kV/cm) was about 29%, loss tangent ~ 0.13, K-factor = tunability/tan δ from 152% @ 10GHz to 46% @ 40GHz. The ATN/sapphire CPWIDCs showed the lowest dispersion ~ 4.3% in whole frequency range from 1 to 40 GHz, voltage tunability 4.7% @ 20GHz and 200 kV/cm, lowest loss tangent ~ 0.068 @ 20GHz, K-factor = tunability/tan δ ranged from 124% @ 10GHz to 35% @ 40GHz. BST film CPWIDCs on sapphire showed frequency about 17%, the highest voltage tunability ~ 22.2%, loss tangent ~ 0.137 @ 20GHz, and K-factor = 281% @ 10GHz to 95% @ 40GHz. / QC 20100906

Im Rahmen der vorliegenden Arbeit wurden planare und drahtförmige Heterostrukturen (HS) mit ZnO- und ZnCdO-Quantengräben bezüglich ihrer Lumineszenz untersucht. Die Proben wurden mit der gepulsten Laserabscheidung (PLD) hergestellt. Bei ZnO-basierten drahtförmigen HS mit Durchmessern im Mikro- und Nanometer-Bereich handelt es sich um vielversprechende Kandidaten für miniaturisierte optoelektronische Bauelemente. Da es für viele Anwendungen notwendig ist, dass die Emission des Quantengrabens (QW) in einem breiten Spektralbereich eingestellt werden kann, muss die ZnO-Bandlücke möglichst stark verändert werden können. Durch ZnCdO und MgZnO ist dies möglich. Durch eine Optimierung der Abscheideparameter wurde der für PLD erreichte maximale Cd-Gehalt signifikant auf 0,25 erhöht. Große Mg-Gehalte konnten schon vor der Forschung zur vorliegenden Arbeit mit der PLD realisiert werden. Die planaren HS mit ZnO-Quantengräben wurden vorrangig bezüglich Ihrer Lumines-zenzeigenschaften untersucht. Aufgrund der Orientierung der QW sollten diese zusätzlich zum Quantum-Confinement Effekt den Quantum-Confined Stark Effect (QCSE) zeigen. Der QCSE wurde durch zeitabhängige und anregungsabhängige Lumineszenzmessungen nachgewiesen. In den Mikrodraht (µW)- bzw. Nanodraht (NW)-HS mit ZnO-QW wurde die Emission zwischen 3,4 eV und 3,6 eV bzw. 3,4 eV und 3,7 eV eingestellt. Um HS mit ZnCdO-QW herstellen zu können, war es notwendig, die strukturellen und optischen Eigenschaften sowie die elektronische Struktur von ZnCdO-Dünnfilmen zu untersuchen. Durch einen hohen Cd-Gehalt von 0,25 war es möglich, die Bandlücken-energie um 0,8 eV zu verringern. In planaren HS wurde ZnO bzw. MgZnO als Barriere verwendet und die QW-Emission zwischen 2,5 eV und 3,1 eV bzw. 2,5 eV und 3,65 eV eingestellt. Es wurde untersucht, ob für HS mit ZnCdO-QW ein QCSE auftritt. Die experimentellen Energien wurden dazu mit berechneten Werten verglichen, die mithilfe einer Effektiv-Masse-Näherung und dem Modell eines endlich tiefen Potentialtopfes bestimmt wurden. In entsprechenden µW- bzw. NW-HS wurde die QW-Emission infolge des Quantum-Confinement Effektes zwischen 2,7 eV und 3,1 eV bzw. 2,5 eV und 3,4 eV variiert. Da es für die Anwendung von µW- und NW-HS wichtig ist, dass diese eine homogene QW-Emission zeigen, wurde deren spektrale Position entlang der Struktur und für die verschiedenen Facetten der hexagonalen Drähte untersucht. Die Homogenität der Emission ist für die µW-HS kleiner als für die NW-HS.

The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (BST) thin films. Emphasis has been laid on the study of a plausible correlation between structure and property in order to optimize the processing parameters suitably for required application. An attempt has been made to understand the basic properties such as, origin of dielectric response, charge transfer under low and high-applied electric fields across the BST capacitor and finally the dielectric breakdown process. Chapter 1 gives a brief introduction on the application of ferroelectric thin films in microelectronic industry and its growth techniques. It also addresses the present issues involved in the introduction of BST as a capacitor material for high-density dynamic random access memories. Chapter 2 outlines the motivation for the present study and briefly outlines the research work involved. Chapter 3 describes the experimental procedure involved in the growth and characterization of BST thin films using pulsed laser ablation technique. Details include the setup design for PLD growth, material synthesis for the ceramic targets, deposition conditions used for thin film growth and basic characterizations methods used for study of the grown films. Chapter 4 describes the effect of systematic variation of deposition parameters on the physical and electrical properties of the grown BST films. The variation in processing conditions has been found to directly affect the film crystallinity, structure and morphology. The change observed in these physical properties may also be correlated to the observed electrical properties. This chapter summarizes the optimal deposition conditions required for growing BST thin films using a pulsed laser ablation technique. Microstructure of BST films has been categorized into two types: (a) Type I structure, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing (exsitu crystallized), and (b) columnar structure (Type II) films, which were as-grown well-crystallized films, deposited at high temperatures. The ac electrical properties have been reviewed in detail in Chapter 5. Type I films showed a relatively lower value of dielectric constant (e ~ 426) than Type II films with dielectric constant around 567. The dissipation factors were around 0.02 and 0.01 for Type I and Type II films respectively. The dispersion in the frequency domain characteristics has been quantitatively explained using Jonscher's theory. Complex impedance spectroscopy employed showed significant grain boundary response in the case of multi-grained Type I films while negligible contribution from grain boundaries has been obtained in the case of columnar grained Type II BST films. The average relaxation time r obtained from the complex impedance plane plots show almost three orders higher values for Type I films. The obtained results suggest that in multi-grained samples, grain boundary play a major role in electrical properties. This has been explained in accordance to a model proposed on the basis of depleted grains in the case of Type I films where the grain sizes are smaller than the grain boundary depletion width. Chapter 6 describes the dc leakage properties of the grown BST thin films and the influence of microstructure on the leakage properties. It was evident from the analysis of the graph of leakage current against measurement temperature, that, the observed leakage behavior in BST films, can not be attributed to a single charge transport mechanism. For Type I films, the Arrhenius plot of the leakage current density with 1000/T exhibits different regions with activation energy values in the range of 0.5 and 2.73 for low fields (2.5kV/cm). The activation energy changes over to 1.28 eV at high fields (170 kV/cm). The obtained values agree well with that obtained from the ac measurements, thus implying a similarity in the origin of the transport process. The activation energy value in the range of 0.5 eV is attributed to the electrode/film Schottky barrier, while the value in the range of 2.73 eV is due to deep trap levels originating from Ti+3 centers. The value in the range of 1.28 eV has been attributed to oxygen vacancy motion. Similar results have been obtained from the Arrhenius plot of the leakage current for Type II films. In this case, only two different activation energy values can be identified in the measured temperature and applied electric field range. At low fields the activation energy value was around 0.38 eV while at high fields the value was around 1.06 eV. These values have been identified to be originating from the electrode/film Schottky barrier and oxygen vacancy motion respectively. Thus a complete picture of the charge transport process in the case of BST thin film may be summarized as comprising of both electronic motion as well as contribution from oxygen vacancy motion. The effect of electrical stress on the capacitance-voltage (C-V) and the leakage current has been analyzed in Chapter 7. From the change in the zero bias capacitance after repeated electron injection through the films the values of the electronic capture cross-section and the total trap density for Type I and II films have been estimated. The results showed higher values for Type I film in comparison to Type II films. The difference has been attributed to the presence of grain boundaries and a different interface in the case of Type I films when compared to Type II films where the absence of grain boundaries is reflected in the columnar microstructure. A study of the time-dependent-dielectric-breakdown (TDDB) characteristics under high fields for Type I and Type II films showed higher endurance for Type I film. On the other hand space-charge-transient characteristics have been observed in the case of Type II films at elevated temperature of measurement. Mobility and activation energy values extracted from the transient characteristics are found to be in the range of 1 x 10~12 cm2 /V-sec and 0.73 eV respectively, suggesting a very slow charge transport process, which has been attributed to the motion of oxygen vacancies. An overall effect of electrical stress suggested that oxygen vacancy motion can be related to the observed resistance degradation and TDDB, which has been further enhanced by the combination of high temperature and high electric fields. Chapter 8 deals with the effect of intentional doping in the BST films. The doping includes Al at the Ti-site, Nb in the Ti-site and La at the Ba/Sr-site. The effect of doping was observed both on the structure and electrical properties of the BST films. Acceptor doping of 0.1 atomic 7c Al was found to decrease the dielectric constant as well as the leakage current. For higher concentration of acceptor-dopant, the leakage current was found to increase while showing space-charge-transient in the TDDB characteristics, again suggesting the effect of increased concentration of oxygen vacancies. Donor doping using 2 atomic % La and Xb significantly improved the leakage as well as the TDDB characteristics by reducing the concentration of oxygen vacancies. A further procedure using graded donor doping in the BST films exhibits even better leakage and TDDB properties. An unconventional, graded doping of donor cations has been carried out to observe the impact on leakage behavior, in particular. The leakage current measured for a graded La-doped BST film show almost six orders of lower leakage current in comparison to undoped BST films, while endurance towards breakdown has been observed to increase many-fold. Chapter 9 highlights the main findings of the work reported in this thesis and lists suggestions for future work, to explore new vistas ahead.

The Pulsed Laser Deposition is an established method for the preparation of thin films and nm layer systems. In this work a cross beam PLD system is used as a special development for reduction of macro particle contamination in the growing layer. Two plasma plumes which overlap under a defined angle are produced on separated targets by two synchronized lasers. In the overlapping zone the direction of plasma expansion is changed by interaction of plasma particles. A diaphragm is used to guaranty that only the part of the plasma is deposited on the substrate that has changed the direction of expansion in the interaction zone. Detailed characterizations of plasma properties, deposition and growth conditions were carried out to demonstrate that cross beam PLD is an effective method to reduce macro particle contamination and allows layer growth under reduced energetic loading of the substrate. In the second part of this work cross beam PLD is used to produce Ni/C multilayers and artificial mixtures. The interest is focused on the mechanisms of layer disintegration and structure formation under thermal loading. Possible processes for layer disintegration are discussed on a theoretical background and verified in TEM examinations. / Die Pulsed Laser Deposition ist ein etabliertes Verfahren zur Herstellung dünner Schichten im nm-Bereich. Das in dieser Arbeit verwandte PLD-Zweistrahlverfahren ist eine besondere Entwicklung zur Verringerung der Makropartikelkontamination der Schichten. Zwei synchronisierte Laser erzeugen auf zwei benachbarten Targets zwei Plasmafackeln, die unter einem bestimmten Winkel überlappen, was zu einer Änderung der Ausbreitungsrichtung des Palmas führt. Ein spezielle Blendenanordnung garantiert, dass nur der abgelenkte Teil des Plasmas auf dem Substrat abgeschieden wird, welches für die anfänglichen Plasmafackeln im Schatten liegt. Anhand einer umfangreichen Charakterisierung der Plasma-, Abscheide- und Schichtwachstumseigenschaften wird gezeigt, dass das PLD-Zweistrahlverfahren eine effektive Verminderung der Makropartikelkontamination der Schichten ermöglicht und dass das Schichtwachstum unter deutlich verringertem Energieeintrag im Vergleich zur konventionellen PLD erfolgt. Das Verfahren wird im zweiten Teil der Arbeit angewandt um Ni/C-Multischichten und künstliche Mischungen herzustellen. Das Interesse liegt hierbei auf den Mechanismen des Schichtzerfalls und auf den entstehenden Strukturen bei thermischer Behandlung metastabiler Schichtsysteme. Anhand theoretischer Betrachtungen werden die möglichen Prozess des Schichtzerfalls eingegrenzt und mittels TEM-Untersuchungen verifiziert.

The work in this thesis focuses on the preparation of epitaxial Nd-Fe-B thin films using pulsed laser deposition for good hard magnetic properties. They are suitable for a basic understanding of the intrinsic magnetic properties. Compositional control was necessary to achieve phase formation with improved magnetic properties. Nd-Fe-B samples were prepared on single crystal MgO (001) substrates with different buffer layers in order to obtain good textures with different surface morphology. The smooth and continuous epitaxial films were suitable for performing magnetization measurements under stress. Although the magnetostriction is easily neglected in the Nd2Fe14B compound, distinguishable inverse magnetostriction was observed by conventional tensile elongation with a flexible substrate. As a result, anisotropic strain in the film, which breaks the in-plane symmetry, affected the opening angle during the spin reorientation. Therefore an elliptical distortion of the in-plane anisotropy below the spin reorientation temperature of Nd2Fe14B was obtained, whereas the transition temperature itself was not influenced significantly. / Diese Arbeit behandelt die Herstellung dünner epitaktischer Nd-Fe-B-Schichten mit gepulster Laserdeposition mit dem Ziel, gute hartmagnetische Eigenschaften zu erreichen. Diese Schichten sind außerdem für das Verständnis grundlegender magnetischer Eigenschaften geeignet. Die Kontrolle der Zusammensetzung ist notwendig, um die Phasenbildung und optimale hartmagnetische Eigenschaften zu erreichen. Nd-Fe-B-Schichten wurden auf einkristallinen MgO (001)-Substraten mit verschiedenen Buffern deponiert, um unterschiedliche Texturen und Oberflächenmorphologien einzustellen. Die glatten kontinuierlichen epitaktischen Schichten ermöglichen die Messung der Magnetisierung bei gleichzeitig angelegter mechanischer Spannung. Obwohl die Magnetostriktion bei Nd-Fe-B im Allgemeinen vernachlässigt werden kann, konnte an Nd-Fe-B-Schichten nach dem Aufbringen einer Dehnung auf ein flexibles Substrat eine deutliche inverse Magnetostriktion induziert werden. Die anisotrope Dehnung in der Schicht, die die Symmetrie in der Schichtebene bricht, beeinflusst die Öffnungswinkel bei der Spinreorientierung. Damit wurde unterhalb der Spinreorientierungstemperatur eine elliptische Verzerrung der Anisotropie in der Schichtebene erreicht, die Übergangstemperatur selbst änderte sich dagegen nicht signifikant.

The fundamental properties of hexagonal multiferric HoMnO3 films have been thoroughly investigated. The films are grown by pulsed laser deposition on Y:ZrO2(111) substrates. High quality epitaxial HoMnO3 films of 25 { 1000 nm thickness were successfully prepared. The film properties are compared to those of single-crystals. The magnetization measurements revealed that the films show a deviating magnetic behavior from the single-crystals in several ways. For instance, the films have a weakened antiferromagnetic Ho3+ order confirmed from magnetic susceptibility. The difierences are likely to be related to the modified (mostly larger) lattice parameters of films. An approximate phase diagram in comparison with the single-crystal's one is constructed. For multiferroicity investigations, Second Harmonic Generation (SHG; in collaboration with the group of M. Fiebig) has been employed. By SHG, the ferroelectric polar order of the films is obviously confirmed. The ferroelectric switching at room temperature could be clearly demonstrated, whereas leakage of films requires generally a more sophisticated approach. / Die fundamentalen Eigenschaften von hexagonalen multiferroischen HoMnO3 Schichten werden eingehend untersucht. Die dünnen Schichten wurden mittels gepulster Laserdeposition auf Y:ZrO2(111)-Substraten gewachsen. Hochwertige epitaktische HoMnO3-Dünnschichten von 25 { 1000 nm Dicke wurden erfolgreich hergestellt. Die Dünnschichteigenschaften werden mit denen von Einkristallen verglichen. Die Magnitisierungsmessungen ergeben, dass die dünnen Schichten ein von den Einkristallen in verschiedener Weise abweichendes magnetischen Verhalten zeigen. Zum Beispiel haben die dünnen Schichten eine abgeschwächte antiferromagntetische Ho3+ Ordnung, die durch die magnetische Suszeptibilität bestätigt wird. Die Unterschiede sind wahrscheinlich auf die veränderten (meistens grösseren) Gitterparameter der dünnen Schichten zurückzuführen. Ein Phasendiagramm wird zum Vergleich mit Einkristallen konstruiert. Durch Second Harmonic Generation (SHG; in Zusammenarbeit mit der Gruppe von M. Fiebig) wird die ferroelektrische Ordnung der dünnen Schichten eindeutig bestätigt. Das ferroelektrische Umschalten bei Raumtemperatur kann eindeutig nachgewiesen werden, wobei durch den Leckstrom der dünnen Schichten allgemein eine detailliertere Vorgehensweise benötigt wird.

Polymer/Metall-Schichtsysteme mit Ausmaßen auf der Nanometer-Skala repräsentieren eine wichtige Materialklasse, welche für Untersuchungen von Grenzflächen- und Größeneffekten eine besondere Rolle spielen. Interessanterweise beobachtet man bei der Herstellung von Polymer/Metall-Systemen mit der gepulsten Laserdeposition spannungsinduzierte Wellenbildung in den Metallschichten, wenn diese auf einem Polymer mit einem niedrigen Elastizitätsmodul deponiert werden. Die Druckspannungen in den Metallschichten lassen sich aufgrund der hohen kinetischen Energien der deponierten Teilchen (100 eV) erklären. Die Biegebalkentheorie beschreibt dabei den Zusammenhang zwischen der ausgebildeten Wellenlänge und den Eigenschaften der beiden Komponenten. Aufgrund dieses Verständnisses ist es möglich, die gemessene Wellenlänge als Messmethode zur Bestimmung der mechanischen Eigenschaften der beiden Komponenten zu verwenden. Des Weiteren kann die Wellenlänge ganz gezielt durch Variation der Schichtdicke beider Komponenten eingestellt werden. Durch eine Steigerung des Elastizitätsmoduls der Polymerschicht ist es möglich, glatte Metallschichten ohne Wellenbildung herzustellen. Auf diese Weise lassen sich auch glatte, periodische Polymer/Metall-Schichtsysteme mit der gepulsten Laserdeposition herstellen, welche viele Möglichkeiten bieten sowohl für wissenschaftliche Fragestellungen als auch für Anwendungen.

Im Rahmen dieser Arbeit wurde der Einfluss von Defekten auf die Eigenschaften von Ferrit-Dünnfilmen untersucht. Die Dünnfilme wurden mit Hilfe von gepulster Laserabscheidung bei verschiedenen Züchtungsparametern hergestellt. Durch Variation der Substrattemperatur und des Sauerstoffpartialdrucks wurden Dünnfilme verschiedener kristalliner Qualität gezüchtet. Diese wurden hinsichtlich ihrer chemischen Komposition mit Hilfe von energie-dispersiver Röntgenspektroskopie und Röntgenphotoelektronenspektroskopie untersucht. Durch Korrelation der Ergebnisse mit Messungen zum zirkularen magnetischen Röntgendichroismus, konnte eine partielle Inversion der Spinellstruktur nachgewiesen werden. Der Grad der Inversion ist höher für geringe Abscheidetemperaturen. Für diese defektreichen Dünnfilme zeigen Röntgenbeugungsuntersuchungen eine geringere kristalline Ordnung der Dünnfilme. Die strukturellen Defekte haben einen maßgeblichen Einfluss auf die elektrischen und magnetischen Eigenschaften der Ferrit-Dünnfilme. So zeigen die Ferrit-Dünnfilme für geringe Züchtungstemperaturen eine erhöhte elektrische Leitfähigkeit, während Dünnfilme, die bei hohen Substrattemperaturen gezüchtet wurden, isolierend sind. Die Temperaturabhängigkeit der elektrischen Leitfähigkeit kann auf thermisch aktivierte Hopping-Leitung oder die Leitung zwischen Clustern, die in einer Matrix eingebettet sind, zurückgeführt werden. Die magnetischen Eigenschaften von Zinkferrit-Dünnfilmen werden maßgeblich durch Defekte in der Spinellstruktur bestimmt, da es nominell in der normalen Spinellstruktur kristallisiert und daher antiferromagnetisch ist. Die partielle Inversion der Eisen- und Zinkionen führt zu Ferrimagnetismus in den Zinkferrit-Dünnfilmen, der mit Hilfe von SQUID-Messungen in dieser Arbeit eingehend untersucht wurde. Durch Korrelation der Ergebnisse der verschiedenen Untersuchungsmethoden konnten Rückschlüsse auf die dominierenden Defekte in den Ferrit-Dünnfilmen geschlossen werden. So sind zum einen Defekte auf atomarer Skala, wie Antisite-Defekte und divalenten Fe-Ionen für die erhöhte elektrische Leitfähigkeit und die größere Magnetisierung der defektreichen Dünnfilme verantwortlich. Zum anderen können ausgedehnte Defekte, im Speziellen Cluster, die in einer amorphen Matrix eingebettet sind, nicht ausgeschlossen werden.

This thesis discusses two different magnetic materials: epitaxial yttrium iron garnet (YIG) and heteromorphous CoFeB-SiO2 films. YIG films were grown by pulse laser deposition (PLD) techniques onto gadolinium gallium garnet (GGG) substrates of (111) and (001) crystal orientations. Using stoichiometric and overstoichiometric ablative targets, we developed two types of YIG submicron films. The films grown from overstoichiometric targets have magnetic properties slightly different from standard liquid phase epitaxy (LPE) YIGs. They also demonstrate good substrate matching and approximately 6% nonstoichiometry. In contrary, films grown from stoichiometric targets posses surprisingly high values of uniaxial anisotropy, meanwhile cubic anisotropy is reduced several times. These films also reveal strong lattice distortions and nonstoichiometry around 17%. Employing Weiss molecular field theory and single-ion anisotropy model we determined the preferential occupancy of the octahedral [a] positions in the YIG cubic lattices by Fe3+ vacancies. The vacancies were found to be preferentially oriented along the growth direction perpendicular to the film surface. We called this effect “deformation blockade”. Different magnetostatic surface wave (MSSW) filters were also demonstrated. The filters employ high uniaxial anisotropy in YIG submicron films with magnetic losses ΔH ~ 1 Oe.  Heteromorphous CoFeB-SiO2 films were deposited onto glass substrates employing carrousel magnetron sputtering. This novel technique allows amorphous films fabrication with record high in-plane anisotropy. The induced anisotropy fields here are approximately dozen times greater the values achieved using conventional growth technique when external bias field is applied during deposition process. Interesting observations were made studying CoFeB-SiO2 magnetization dynamics in the wide frequency range from 500 kHz up to 15 GHz.  Two different anomalies of the magnetic susceptibility were found at the field of in-plane anisotropy Hp and critical field Hcr (0 < Hcr < Hp). We explained the anomalies appearance by sequence of the domain walls transformations so that Néel-Bloch-Néel domain wall transition stands for the instability at H = ±Hcr and transition from the uniformly magnetized state to the domain state with Néel domain wall and vice versa is responsible for the instability at H = ±Hp. / QC 20111122