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The atomic structure of the clean and adsorbate covered Ir(110) surface / Die atomare Struktur der reinen und adsorbatbedeckten Ir(110) OberflächeKuntze, Jens 26 September 2000 (has links)
The adsorption and coadsorption of sulfur and oxygen on the Ir(110) surface was investigated by scanning tunneling
microscopy (STM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). The clean
Ir(110) surface forms alternating (331) and (33-1) minifacets, resulting in a mesoscopically rippled surface. Upon
chemisorption of sulfur or oxygen and subsequent annealing, the surface structure is changed. In the following, the
results concerning sulfur and oxygen adsorption will be summarized before addressing the coadsorption system.
Sulfur adsorption: At sulfur coverages of 0.1-0.2 ML, the Ir(110) surface adopts a (1x2) missing-row configuration
similar to clean Au(110) and Pt(110). The sulfur-stabilized Ir(110)-(1x2) does not show any evidence for the
preference of (111) faceted steps, and consequently does not form a mesoscopic fish-scale pattern. The latter was
observed on the (110) surfaces of Au and Pt, and was found to be driven by the preference for (111) step facets. On
Ir(110), no such preference seems to exist, since (331) step facets are frequently observed. With respect to the
adsorbed sulfur, no extended islands are observed, indicating repulsive adsorbate-adsorbate interactions.
At sulfur coverages near 0.5 ML, a p(2x2) structure with p2mg (glide-plane) symmetry is observed. The adsorption site
and structural model derived by STM are compatible with an earlier LEED analysis of that structure: S adsorbs in
threefold coordinated fcc hollow sites above the (111) facets formed by the non-missing substrate rows.
At coverages higher than 0.5 ML, a c(2x4) LEED pattern with additional faint streaks in the [-110] azimuth is observed.
STM reveals that the streaks are due to pairs of sulfur atoms (dimers, for brevity) in a second adsorbate layer, that can
be desorbed by heating to 1100 K. A structural model is derived on the basis of the STM results, showing the dimer
atoms in on-top positions over sulfur atoms of the first adsorbate layer. When the surface is completely covered by the
dimers, the surface is saturated at 0.75 ML.
Oxygen adsorption: In agreement with earlier reports, oxygen adsorption and subsequent annealing to 700-900 K results
in an unreconstructed (1x1) surface, covered by a c(2x2)-O overlayer at 0.5 ML coverage.
Coadsorption of oxygen on an S-precovered surface (S-coverage below 0.5 ML) leads to a phase separation of the
adsorbates (competitive adsorption). At low coverages, oxygen forms a p(2x2)-O phase, whereas at higher
O-coverages a compression into a (1x2)-O phase is observed. Postannealing the (1x2)-O phase at 900 K in vacuum
leads to a reduction of the sulfur concentration, indicating sulfur oxidation. Interestingly, the p(2x2)-O phase does not
seem to be reactive, according to the AES results. A possible explanation may be that the more densely packed
(1x2)-O phase can be regarded as an activated structure. This is also supported by the STM results.
At S-coverages above 0.5 ML, the surface is completely poisoned with respect to oxygen adsorption. Nevertheless,
heating the sulfur saturated Ir(110)-c(2x4)-S structure in an oxygen atmosphere, the sulfur concentration gradually
drops to zero. At intermediate stages of this oxidation process, island formation is observed by STM, but the underlying
formation processes remain to be resolved.
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Probing Light-Matter Interactions in Plasmonic NanotipsSchröder, Benjamin 14 July 2020 (has links)
No description available.
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1.6-2.5 μm long wavelength quantum dash based lasers for gas sensing / Lasers à bâtonnets quantiques InAs/InP émettant dans la gamme 1.6-2.5 μm pour la détection de gazPapatryfonos, Konstantinos 11 June 2015 (has links)
Ce travail de thèse a porté sur l’étude des propriétés fondamentales de bâtonnets quantiques InAs/InP formant la zone active de diodes lasers, à l’aide de microscopie et spectroscopie à effet tunnel à balayage. Nous avons pu étudier la nature de la dimensionnalité de ces nanostructures, mesurer la structure électronique de bâtonnets uniques en fonction de leur position dans la jonction PIN et également établir la cartographie de leur fonction d’onde à l’aide de mesures de conductivité différentielle. Nous avons de plus étudié le potentiel de ces bâtonnets quantiques comme milieu à gain de diodes lasers pour applications en détection de gaz. Nous avons optimisé des structures actives qui ont permis une émission laser en continu jusqu’à 2 µm et nos résultats expérimentaux et de modélisation montrent que cette longueur d’onde d’émission peut être étendue encore plus vers le MIR. De plus nous avons conçu et développé un procédé de fabrication de lasers DFB à couplage latéral à base de réseau de Bragg à fort rapport cyclique qui a permis d’améliorer de façon significative le coefficient de couplage (>40 cm-1). Ce procédé ne nécessitant pas de reprise d’épitaxie est très simple et à bas coût dans sa réalisation. Les valeurs élevées du coefficient de couplage sont d’autre part obtenues sans recourir à des réseaux de Bragg métalliques, comme c’est généralement le cas dans la littérature, qui introduisent des pertes de propagation non négligeables. Cette nouvelle approche a été mise en œuvre pour la réalisation d’un laser monofréquence émettant à 1,986 µm, avec une puissance de sortie par face de 4,5 mW, un courant de seuil de 65 mA et un taux de suppression des modes latéraux > 37 dB. Ces paramètres sont parfaitement adaptés à la détection e.g. de NH3, ce qui est très important pour des applications industrielles. Ce type de laser DFB à couplage latéral (LC-DFB), à fort k et faibles pertes de propagation constitue une brique de base pour la réalisation future de composants à deux sections présentant une gamme élevée d’accordabilité en continu pour des applications aussi bien en détection de gaz qu’en télécommunications optiques / During this work, we investigated the fundamental properties of single Qdashes, that were embedded in a diode-laser structure configuration, using cross-sectional scanning tunneling microscopy and spectroscopy. The main results included addressing the open question of the Qdash dimensionality nature, probing the electronic structure of individual nanostructures in respect to their precise location in the p-i-n junction and imaging of the Qdash electronic squared wavefunctions by high-stability differential conductivity mapping. In addition, we investigated Qdashes as the active material of semiconductor lasers, with special attention to the gas sensing application. We optimized Qdash based material at specific emission wavelengths above 1.55 um, and demonstrated CW lasing up to 2 um with high performances. Our experimental and simulation results show to be promising for further pushing the emission wavelength out, towards longer wavelengths in the future, using the same material system. Furthermore, a novel process has been developed, for the fabrication of laterally-coupled DFB lasers, based on high-duty-cycle etched Bragg gratings: The process provides appreciably improved coupling coefficients suitable for practical applications (~40 cm-1), while avoiding the complicated high cost processing steps, that had been employed in previous works (regrowth over corrugated substrates/ FIB lithography) and without using the conventional highly absorbing metal gratings, which introduce significant additional losses. We implemented this approach on our optimized epi-wafer and demonstrated high SMSR (>37dB) LC-DFB lasers emitting at 1.986 um, with an output power per facet up to 4.5 mW and Ith down to 65 mA for a 630 um cavity length, suitable for detection of the NH3 gas. These high-κ, low loss, preliminary results of our LC-DFB lasers, achieved using etched gratings, open the way for the fabrication of a two-section LC-DBR laser using the same technology in the future. Such a laser would combine a significantly simplified process, with sufficient feedback, continuous wide range tunability, and negligible grating-induced losses, finding potential applications both in sensing and telecommunications applications
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Surface-confined 2D polymerization of a brominated copper-tetraphenylporphyrin on Au(111)Smykalla, Lars, Shukrynau, Pavel, Korb, Marcus, Lang, Heinrich, Hietschold, Michael 22 April 2015 (has links)
A coupling-limited approach for the Ullmann reaction-like on-surface synthesis of a two-dimensional covalent organic network starting from a halogenated metallo-porphyrin is demonstrated. Copper-octabromo-tetraphenylporphyrin molecules can diffuse and self-assemble when adsorbed on the inert Au(111) surface. Splitting-off of bromine atoms bonded at the macrocyclic core of the porphyrin starts at room temperature after the deposition and is monitored by X-ray photoelectron spectroscopy for different annealing steps. Direct coupling between the reactive carbon sites of the molecules is, however, hindered by the molecular shape. This leads initially to an ordered non-covalently interconnected supramolecular structure. Further heating to 300 °C and an additional hydrogen dissociation step is required to link the molecular macrocycles via a phenyl group and form large ordered polymeric networks. This approach leads to a close-packed covalently bonded network of overall good quality. The structures are characterized using scanning tunneling microscopy. Different kinds of lattice defects and, furthermore, the impact of polymerization on the HOMO–LUMO gap are discussed. Density functional theory calculations corroborate the interpretations and give further insight into the adsorption of the debrominated molecule on the surface and the geometry and coupling reaction of the polymeric structure. / Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
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Tunneling spectroscopy of highly ordered organic thin filmsTörker, Michael 23 April 2003 (has links)
In this work, a Au(100) single crystal was used as substrate for organic molecular beam epitaxy. Highly ordered organic thin films of the molecules 3,4,9,10-perylenetetracarboxylic-3,4,9,10-dianhydrid (PTCDA) and hexa-peri-hexabenzo-coronene (HBC) as well as organic-organic heterostructures on reconstructed Au(100) were prepared. The molecular arrangement was characterized in Scanning Tunneling Microscopy and Low Energy Electron Diffraction investigations. Scanning Tunneling Spectroscopy data were recorded on monolayer and submonolayer PTCDA films. Measurements on closed PTCDA layers at different fixed tip sample separations revealed a peak +0.95V. Other measurements performed consecutively on a PTCDA island and on uncovered Au(100) areas showed that this peak is indeed caused by the PTCDA molecules. Another set of consecutive measurements on herringbone and square phase PTCDA islands indicates that in the normalized differential conductivity the peak shape and peak position depend on the molecular arrangement. The STS data are compared to UPS and IPES results, already published. In the case of highly ordered films of HBC on Au(100) it was possible to derive the energetic positions of the HBC frontier orbitals and the energies of the molecular states next to these frontier orbitals from Tunneling Spectroscopy measurements. These measurements were performed using two different tip materials. The results are compared to UPS measurements, to theoretical calculations of the electronic conductance based on a combination of the Landauer transport formalism with a density-functional-parametrized tight-binding scheme within the Local Density Approximation (LDA) as well as semiempirical quantum chemistry calculations. / Für die hier dargestelleten Arbeiten wurde ein Au(100) Einkristall als Substrat für die organische Molekularstrahlepitaxie verwendet. Hochgeordnete organische Dünnschichten der Moleküle 3,4,9,10-Perylen-tetracarbonsäure-3,4,9,10-dianhydrid (PTCDA) und Hexa-peri-hexabenzo-coronen (HBC) sowie organisch-organische Heteroschichten wurden auf der Au(100) Oberfläche abgeschieden. Die Struktur der Schichten wurde mittels Rastertunnelmikroskopie (STM) und Niederenergetischer Elektronenbeugung (LEED) untersucht. Tunnelspektroskopiedaten wurden für Monolagen sowie Submonolagen von PTCDA aufgenommen. Messungen an geschlossenen PTCDA Filmen zeigen für verschiedene Probe-Spitze-Abstände ein Maximum in der normierten differentiellen Leitfähigkeit bei +0.95V. Aufeinanderfolgende Messungen auf PTCDA-Inseln und unbedeckten Gebieten der Au(100) Oberfläche zeigen eindeutig, dass dieses Maximum auf die PTCDA Moleküle zurückzuführen ist. Weitere Messungen an PTCDA Inseln unterschiedlicher Struktur (Fischgrätenstruktur bzw. quadratische Struktur) belegen einen Zusammenhang zwischen der Anordnung der Moleküle und der Peakposition bzw. Peakform in der normierten differentiellen Leitfähigkeit. Die STS Daten werden mit UPS und IPES Ergebnissen aus der Literatur verglichen. Im Falle hochgeordneter HBC Schichten auf Au(100) war es möglich, neben dem höchsten besetzten und niedrigsten unbesetzten Molekülorbital auch die energetische Position der jeweils nächsten Orbitale zu bestimmen. Diese Messungen wurden mit zwei unterschiedlichen Spitzenmaterialien durchgeführt. Die Ergebnisse für HBC auf Au(100) werden mit UPS Daten sowie mit theoretischen Rechnungen verglichen.
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Ordering in weakly bound molecular layers: organic-inorganic and organic-organic heteroepitaxyMannsfeld, Stefan 23 September 2004 (has links)
It is an aim of this work to provide insight into the energetic influence on the ordering of molecular thin films on crystalline substrates. Here, the term substrate either refers to inorganic crystal surfaces or highly ordered layers of another organic molecular species. In order to calculate the total interface potential of extended molecular domains, a new calculation technique (GRID technique) is developed in the first part of this work. Compared to the standard approach, this method accelerates the potential calculation drastically (times 10000). The other parts of the thesis are dedicated to the comparison of experimental results (obtained by scanning tunneling microscopy and electron diffraction) to the optimal layer structure as predicted by optimization calculations. Potential calculations which are performed for the system perylenetetracarboxylicdianhydride (PTCDA) on graphite demonstrate that point-on-line coincident structures correspond to energetically favorable alignments of the molecular lattice with respect to the substrate lattice. The capability of the GRID technique to predict the optimal layer structure is demonstrated for the system peri-hexabenzocoronene (HBC) on graphite. The organic-organic heteroepitaxy system PTCDA on HBC on graphite is investigated in order to clarify to which extent the ordering mechanism there differs from that of the organic-inorganic heteroepitaxy system PTCDA on graphite. As a result of this investigation, a new type of epitaxy, i.e., substrate induced ordering is found. This new epitaxy type is governed by the inner structure of the substrate lattice unit cell. Here, the substrate surface is a layer of organic molecules itself, hence the substrate surface unit cell does indeed exhibit a complex inner structure. A generalized classification scheme for epitaxial growth incorporating this new type of epitaxy is proposed. In the last chapter, the structure of the first layers of titanylphthalocyanine (TiOPc) on Au(111) is investigated and compared to potential optimization calculations. The correspondence of experimental and theoretical results provides evidence that the GRID technique can, in principle, also be applied to molecular layers on metal surfaces. / Das Ziel der vorliegenden Arbeit ist es, Einblicke in die energetischen Einflüsse, die zur Ausbildung der Schichtstruktur organischer Moleküle auf kristallinen Substraten führen, zu geben. Diese Substrate sind entweder Oberflächen anorganische Kristalle oder selbst hochgeordnete Molekülschichten. Um das totale Grenzflächenpotential ausgedehnter Moleküldomänen berechnen zu können, wird im ersten Teil der Arbeit eine neue Berechnungsmethode (GRID Technik) vorgestellt. Im Vergleich mit herkömmlichen Berechnungsmethoden auf der Basis molekülmechanischer Kraftfelder ist diese neue Methode daher um ein Vielfaches schneller (Faktor 100000). Die folgenden Teile der Arbeit sind dem Vergleich experimenteller Ergebnisse (Rastertunnelmikroskopie und Elektronenbeugung) mit, durch Potentialoptimierungsrechnungen als energetisch günstig vorhergesagten, Schichtstrukturen gewidmet. So kann für das System Perylentetracarbonsäuredianhydrid (PTCDA) auf Graphit mittels Potentialberechnungen nachgewiesen werden, daß die experimentell gefundenen ?Point-on-line koinzidenten? Strukturen energetisch günstige Anordnungen des Molekülgitters bezüglich des Substratgitters darstellen. Die Eignung der neuen Berechnungsmethode zur Vorhersage der günstigsten Adsorbatgitterstruktur für ein gegebenes System aus Molekül und Substrat, wird anhand des Systems peri-Hexabenzocoronen (HBC) auf Graphit demonstriert. Das organisch-organische Heteroepitaxiesystem PTCDA auf HBC auf Graphit wird untersucht, um zu klären, inwieweit sich die dafür gültigen Ordnungsmechanismen von denen unterscheiden, die für das Wachstum des organisch-anorganischen Heteroepitaxiesystems PTCDA auf Graphit verantwortlich sind. Dabei gelingt es, eine bisher nicht klassifizierte Art von Epitaxie, d.h. substratinduzierter Ordnung, nachzuweisen. Dieser neue Epitaxietyp ist bedingt durch die innere Struktur einer Substrateinheitszelle - das Substrat ist ja hier selbst eine Schicht geordneter Moleküle, die natürlich eine innere Struktur aufweisen. Im folgenden wird ein verallgemeinertes Klassifizierungssystem für Epitaxietypen abgeleitet, welches den neuen Epitaxietyp beinhaltet. Im letzten Kapitel wird die Struktur von der ersten Lagen von Titanylphthalocyanin (TiOPc) auf Au(111) experimentell untersucht und mit entsprechenden Potentialoptimierungsrechnungen verglichen. Die Übereinstimmung von experimentellen und theoretischen Ergebnissen zeigt, daß die GRID Technik, zumindest prinzipiell, auch für Molekülschichten auf Metallsubstraten anwendbar ist.
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Scanning Tunneling Microscopy Studies of Defects in Semiconductors: Inter-Defect and Host Interactions of Zn, Er, Mn, V, and Co Single-Atom Defects in GaAs(110)Benjamin, Anne Laura 25 October 2018 (has links)
No description available.
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Energetically and Kinetically Driven Step Formation and Evolution on Silicon SurfacesNielsen, Jon F. 11 October 2001 (has links)
No description available.
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Nízkoteplotní rastrovací tunelová mikroskopie / Low temperature scanning tunneling microscopySojka, Antonín January 2017 (has links)
The diploma thesis is divided into two main parts. The first part describes the production of chrome and cobalt tips for SP-STM with subsequent testing of chrome tips on the Fe-Ir system (111). Furthermore, the first results from the growth studies of niobium on iridium(111) are presented. In the second part is described in detail the experimental LT-STM microscope of the Faculty of Physical Engineering. The chapter deals with the development of the microscope and its testing on a HOPG sample under atmospheric and vacuum conditions. The chapter describes the biggest problems which were solved when the microscope was puting into operation state. The second part also introduces the design of a new vacuum transport system, which consists of a tip and sample transport pallet. At the end of the second part is described the testing of cooling systems for LT-STM and the design of their modifications.
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Etude par spectroscopies d'électrons d'interfaces métalliques et semiconductrices / Metallic and semiconducting interfaces studied by electron spectroscopiesTournier-Colletta, Cédric 13 October 2011 (has links)
Cette thèse présente une étude des propriétés électroniques de systèmes de basse dimension à base de métaux et de semiconducteurs. La première partie de l'étude traite le confinement de l'état de Shockley dans des nanostructures tridimensionnelles d'Ag(111), par des mesures STM/STS à très basse température (5 K). Nous avons d'abord analysé en détail la structure en énergie et la distribution spatiale des modes confinés. Nous avons ensuite mis à profit la nature discrète du spectre en énergie pour étudier le temps de vie des quasiparticules. Un comportement typique de liquide de Fermi est mis en évidence, et nous montrons que le mécanisme de diffusion dominant est associé au couplage électron-phonon. La contribution extrinsèque provenant du confinement partiel de l'onde électronique a également été obtenue. Une loi d'échelle est observée avec la taille des nanostructures, ce qui permet d'extraire un coefficient de réflexion plus important que dans de simples ilôts monoatomiques. La seconde partie de l'étude est consacrée aux couches ultra-minces semiconductrices obtenues par dépôts d'alcalins (K, Rb, Cs) sur la surface Si(111):B-[racine]3. Ce travail résout la controverse concernant la nature de l'état fondamental de ce système, et notamment l'origine de la reconstruction 2[racine]3 obtenue à la saturation du taux de couverture. La compréhension en amont de la structure cristallographique permet d'élucider les propriétés électroniques. Nous montrons qu'une approche à un électron, conduisant à un isolant de bandes, décrit le système de manière convaincante, malgré l'indication de forts effets polaroniques. Ce résultat est le fruit d'une étude approfondie combinant des techniques diverses et complémentaires (LEED, ARPES, XPS, STM/STS et calcul DFT) / This thesis is devoted to the electronic properties of low-dimensional systems based on metal and semiconducting materials. The first part deals with the Shockley state confinement in Ag(111) nanostructures, by means of very-low temperature (5 K) STM/STS measurements. We study the electronic structure and spatial distribution of the confined modes. Then the discrete nature of the electronic spectrum allows one to yield the quasiparticule lifetime. A Fermi-liquid behaviour is evidenced and we show that the dominant decay mechanism is attributed to the electron-phonon coupling. The extrinsic contribution arising from the partial confinement of the electronic wave is obtained as well. A scaling law with the nanostructure width is demonstrated, from which we deduce a higher reflection amplitude than in monoatomic islands. In the second part of the thesis, we study semiconducting ultra-thin films produced by alkali (K, Rb, Cs) deposition on the Si(111):B-[root of]3 surface. This work solves the controversy concerning the ground state of this system, and especially the nature of the 2[root of]3 surface recontruction obtained at saturation coverage. Prior understanding of the crystallographic structure allows to elucidate the electronic properties. We show that a one-electron picture, leading to a band insulator scenario, gives a good description of the system, in spite of strong polaronic effects. This conclusion results from an in-depth, combined study of complementary techniques (LEED, ARPES, XPS, STM/STS and DFT calculations).
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