Magister Scientiae - MSc / Technological advancement has created a market for large area electronics such as solar cells and thin film transistors (TFT’s). Such devices now play an important role in modern society. Various types of conducting, semiconducting and insulating thin films of the order of hundreds, or even tens of nanometres are combined in strata to form stacks to create interactions and phenomena that can be exploited and employed in these devices for the benefit of mankind. One such is for the generation of energy via photovoltaic devices that use thin film technology; these are known as second and third generation solar cells. Silicon and its alloys such as silicon germanium (SiGex), silicon oxide (SiOx), silicon carbide (SiCx) and silicon nitride (SiNx) play an important role in these devices due to the fact that each material in its different structures, whether amorphous, micro or nano-crystalline or completely crystalline, has its own range of unique optical, mechanical and electrical properties. These structures and their material properties can thus exert a huge influence over the overall device performance. viii Chemical vapour deposition (CVD) techniques are most widely used in industry to obtain thin films of silicon and silicon alloys. Source gases are decomposed by the external provision of energy thereby allowing for the growth of a thin solid film on a substrate. In this study a variant of CVD, namely Hot Wire Chemical Vapour Deposition (HWCVD) will be used to deposit thin films of silicon nitride by the decomposition of silane (SiH4), hydrogen (H2) and ammonia (NH3) on a hot tantalum filament (~1600 C). Hydrogenated amorphous silicon nitride (a-SiNx:H) has great potential for application in optoelectronic devices. In commercial solar cell production its potential for use as anti-reflection coatings are due to its intermediate refractive index combined with low light absorption. An additional benefit is the passivation of interface and crystal defects due to the bonded hydrogen. This can lead to better photon conversion efficiency. Its optical properties including optical band gap, Urbach tail, and wavelength-dependent optical constants such as absorption coefficient and refractive index are crucial for the design and application in the relevant optoelectronic device. The final firing step in the production of micro-crystalline silicon solar cells, allows hydrogen to effuse into the solar cell from the a-SiNx:H, and drives bulk passivation of the grain boundaries. We therefore propose the exploration of annealing effects on the thin film structure. The study undertakes a comparison of optical and bonding structure of the as deposited thin film compared to that of the annealed thin film which would have undergone changes due to high temperature annealing under vacuum. However, it is difficult to simultaneously obtain all of these important ix optical parameters for a-SiNx:H thin films. Ultraviolet visible (UV-vis) spectroscopy will be the method of choice to investigate the optical properties. Infrared (IR) spectroscopy is a source of useful information on the microstructure of the material. In particular, the local atomic bonding configurations involving Si, N, and H atoms in a-SiNx:H films can be obtained by Fourier Transform Infrared Spectroscopy (FTIR). Therefore, this study will attempt to establish a relationship between film microstructure of a-SiNx:H thin films and their macroscopic optical properties.

Orientadores: Leandro Tiago Manera, Arismar Cerqueira Sodré Júnior / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-27T14:09:44Z (GMT). No. of bitstreams: 1 NascimentoJunior_AdrianoRicardo_M.pdf: 49523846 bytes, checksum: 938b4d8587e112835bf6e0988731ba04 (MD5) Previous issue date: 2015 / Resumo: Neste trabalho foram fabricados microrressonadores em anel com alto fator de qualidade utilizando filmes de nitreto de silício (SixNy) depositados a baixa temperatura (20 °C) utilizando a técnica de deposição ECR-CVD (Deposição em Fase Vapor por Resonância Ciclotrônica do Elétron). Graças à alta não linearidade do SixNy, tais filmes têm sido recentemente usados para aplicações em óptica não linear como a geração de pentes de frequência na banda C de telecomunicações. Para tais aplicações, o guia de onda do dispositivo deve possuir um ponto de dispersão nula no centro da banda C, necessitando de uma grande área. Infelizmente, filmes espessos de nitreto de silício (>400 nm) possuem um alto stress responsável pela ocorrência de rachaduras catastróficas no filme que reduzem drasticamente a eficiência do dispositivo. Utilizando simulações numéricas, demonstrou-se que para valores de índice de refração (n) maiores que 2, a área do guia de onda com zero dispersão em ? = 1,55 ?m é consideravelmente reduzida, necessitando assim de uma menor espessura de filme. Foi obtido um filme de SixNy rico em Si, com índice de refração igual a 2, alta taxa de deposição, baixa concentração de hidrogênio e uma rugosidade média de somente 0,52 nm (4,2 nm de desvio padrão). Devido à baixa temperatura da técnica de deposição empregada, não foi observado traços de stress no filme, permitindo a obtenção de uma espessura de 730 nm utilizando uma única etapa de deposição. Os microrressonadores ópticos fabricados com raios de 60 e 120 ?m apresentaram um FSR (Free Spectral Range) equidistante em toda a banda C e um fator de qualidade de 7,2x10^3 foi obtido experimentalmente. Tais resultados demonstraram a alta eficiência dos dispositivos fabricados com o filme de SixNy desenvolvido e sua promissora aplicação para óptica não linear na banda C de telecomunicações / Abstract: Silicon nitride (SixNy) films deposited by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) at room temperature are proposed for fabrication of microring resonators with high Q-factor. Due to the high silicon nitride nonlinearity, these films recently have also been used for nonlinear optics applications in the telecommunications C-band. For nonlinear applications such as the generation of frequency combs, the waveguide needs a zero dispersion point in the middle of C-band, requesting large waveguide area. Unfortunately, these thick SixNy films (>400 nm) have high stress and suffer from catastrophic cracking, which reduces the device efficiency. Using numerical simulations it was demonstrated that for refractive index (n) values greater than 2, the area of the waveguide with zero dispersion point at ? = 1.55 ?m is greatly reduced. A Si-rich silicon nitride layer with refractive index of 2, high deposition rate, low hydrogen concentration and roughness average of 0.52 nm with standard deviation of 4.2 nm was obtained. Due to the low temperature deposition, no thermal stress was observed in the SixNy film, allowing a thickness of 730 nm obtained with only one deposition step. After experimental measurements, microring resonators having a radius of 60 and 120 ?m, presented an equidistant Free Spectral Range and a Q-factor of 7.2x10^3 was achieved, showing the high efficiency of the device and their promising application in nonlinear effects in the telecommunication C-band / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Silicon photonics has become one of the leading candidates for the next generation optical communication platform. In addition to being an inexpensive material and compatible with Complementary metal–oxide–semiconductor (CMOS) manufacturing, silicon exhibits low absorption at optical telecommunication bands. However, high propagation loss and poor light confinement in narrow Si waveguides have limited high-density optical integration.<br>In this work, we show the fabrication and characterization of a novel type of devices named E-skid devices that can reduce the skin depth and suppress the large spatial content of evanescent light. These devices use artificial anisotropic dielectric metamaterial to suppress the evanescent waves. Beside E-skid devices, we also discuss the fabrication and experimental characterization of mode filters using Silicon on Insulator that can block the fundamental TE0 and allow the higher order modes to pass through using Multi Mode Interference.<br>In this work, the mode is filtered using radiation, not by reflection.<br>Beside Silicon, Silicon Nitride has also gained much interest because of its low loss, smaller nonlinear absorption and higher Kerr effect. Silicon Nitride waveguides have widely<br>been used for lots of applications specially the optical frequency comb generation. One special case of coherent optical frequency comb is Soliton in which case the non-linearity and dispersion cancel each other’s effect and keep the pulse without distortion. In this work, we described the Silicon Nitride fabrication process and did a comparative analysis with other research groups who fabricates similar devices. We tried to improve our process by inserting a few additional steps in our fabrication process. We also investigated our process step by step and found out reasons for our low quality factor and low yield. We found a few factors that might be responsible for the low quality factor and addressed them. We fabricated real devices using our modified process and saw improvement in quality factors, yield and thermal performance of the devices.<br>Finally, we describe an edge polishing method for Silicon Nitride microring resonator devices, which we developed from scratch and we can polish edges down to sub-micron level. Thus, the edges become optically flat and it allowed us to do heterogeneous integration with an Indium Phosphide chip. This paves away for some exciting opportunities like on-chip frequency comb generation.<br><br>

En s’appuyant sur les procédés de fabrication matures et sur la production à grande échelle de l’industrie CMOS, la technologie photonique silicium est une solution potentielle pour le développement de liens optiques haut débit peu onéreux destinés aux centres de données. Un premier pas a été franchi il y a une dizaine d’année avec la réalisation, à l’échelle industrielle, de transmetteurs/récepteurs avec des débits jusqu’à 100Gb/s. Cependant, tout semble indiquer que des vitesses encore plus élevées, (200 voir 400Gb/s), seront bientôt nécessaires. Malheureusement, les limitations techniques de cette première génération de circuits photoniques suggèrent qu’il sera difficile de réaliser des multiplexeurs (MUX/DEMUX) performants. Ces composants sont à la base des solutions de multiplexage en longueur d’onde (WDM) envisagées pour répondre à cette nouvelle demande de bande passante. Par ailleurs, on assiste depuis quelques années à une diversification des applications de la photonique intégrée qu’il semble également difficile de satisfaire au vu des performances de la technologie actuelle. C’est dans ce contexte que s’inscrit le travail de thèse présenté dans ce manuscrit. La solution étudiée est basée sur l’intégration d’un second circuit optique dont les propriétés sont complémentaires de celles du circuit silicium formant ainsi une plateforme optique performante quelle que soit la fonction à réaliser. Un schéma d’intégration monolithique a été privilégié afin de limiter les couts de production et d’assemblage. Le matériau choisi pour la réalisation de ce second circuit optique est le nitrure de silicium (SiN). Il possède en effet des propriétés parfaitement complémentaires de celles du circuit silicium : contraste d’indice réduit, coefficient thermo optique faible et grande gamme de transparence. C’est également un matériau utilisé depuis de nombreuses années dans l’industrie CMOS. Le premier objectif de ce travail de thèse a donc consisté à développer le schéma d’intégration de ce second circuit optique au sein de la technologie photonique PIC50G de STMicroelectronics. Une fois les différentes étapes du flot de fabrication validées, le développement de composants a pu débuter. Tout d’abord les guides d’onde, proposant des pertes de propagation inférieures à 0,2dB/cm à 1300nm, mais également divers composants élémentaires : transitions entre les différentes géométries de guides, coupleur fibre/puce, terminaison de guide d’onde, filtre de signaux parasites et coupleurs/séparateurs de puissance. Une caractérisation statistique de la transition optique entre les circuits Si et SiN a révélé des pertes d’insertion inférieures à 0,3dB entre 1270nm et 1330nm, validant la stabilité de ce composant particulièrement critique. Une attention particulière a été portée à la gestion de la polarisation dans les guides d’onde via le développement de séparateurs et de rotateurs de polarisation dont les performances sont à l’état de l’art des composants silicium. Une étude complète sur les MUX/DEMUX en SiN a également été réalisée. Des réseaux de guides d’onde ont notamment montré de bonnes performances : dérive en température < 12pm/°C, faible sensibilité à la polarisation, pertes d’insertion <1dB, diaphonie < -30dB, fonctionnement jusqu’à 12 canaux, bande passante à -1dB >11nm. Pour terminer, un émetteur/récepteur WDM quatre canaux a été conçu pour démontrer l’intérêt de cette plateforme hybride Si/SiN, il est actuellement en attente de caractérisation. Enfin, une étude des propriétés optiques non linéaires du SiN a permis de démontrer la génération de troisième harmonique de l’UV jusqu’au visible ainsi que la génération d’un supercontinuum s’étendant de 425nm à 1660nm, ouvrant ainsi la voie à de nouvelles applications. / Based on CMOS industry's mature manufacturing processes and large-scale production, silicon photonics technology is a potential solution for inexpensive high-speed optical links for data centers. About ten years ago, a first step was taken with the realization, at an industrial scale, of transmitters/receivers with data rates up to 100Gb/s. However, it seems that even higher speeds (typically 200 or 400Gb/s) will soon be needed. Unfortunately, the technical limitations of this first generation of photonic circuits suggest that it will be difficult to make efficient multiplexers (MUX / DEMUX), which form the basis of wavelength division multiplexing (WDM) solutions designed to meet this new bandwidth demand. Moreover, a diversification of the applications of integrated photonics is ongoing for a few years, which also seems difficult to satisfy given the performance of current technology. The thesis work presented in this manuscript yielded from this context. The studied solution is based on the integration of a second optical layer whose properties are complementary to those of the silicon circuit. This forms an integrated optical platform which can be efficient whatever the function to be performed. A monolithic integration scheme is chosen leveraging the low cost and manufacturing capability of CMOS industry. Silicon nitride (SiN), with a reduced index contrast and a low thermo-optical coefficient, is an interesting candidate for the realization of this second photonic circuit. Indeed, those properties are perfectly complementary to the silicon ones, and particularly adapted to the realization of MUX/DEMUX. Moreover, SiN is a well-known material of CMOS electronics. The first objective of this thesis was to develop the integration scheme of the second optical circuit within ST Microelectronics PIC50G photonic technology. Once all the fabrication steps validated, the development of photonic devices could begin. It starts with several kinds of optical waveguides, among which rib-type demonstrated propagation losses below 0.2dB/cm at 1300nm, but also various elementary components: transitions between waveguides, fiber/chip coupler, waveguide termination, parasitic signals filters and power splitters/combiners. A statistic characterization of the optical transition between Si and SiN circuits reveal insertion losses below 0,3dB from 1270nm to 1330nm, confirming the stability of this critical device. Special attention was paid to the polarization management within the SiN circuit. Polarization splitters and rotators were developed showing comparable performances with Si devices state of the art. An exhaustive study about the realization of SiN MUX/DEMUX was also carried out. Arrayed waveguide gratings especially show good performances: thermal drift < 12pm/°C, low polarization sensitivity, insertion loss <1dB, crosstalk level < -30dB, up to twelve channels, -1dB bandwidth >11nm. To conclude this work, a four channel WDM transmitter/receiver was designed in order to demonstrate the interest of this hybrid Si/SiN platform, its currently waiting for characterization. Finally, a study of the nonlinear properties of SiN demonstrated the generation of a third harmonic optical signal from UV to visible and the generation of a supercontinuum spanning from 425nm to 1660nm, paving the way to new applications.

Identifying the protein content in a cell in a fast and reliable manner has become a relevant goal in the field of proteomics. This thesis computationally explores the potential for silicon nitride nanopores to sense and distinguish single miniproteins, which are small domains that promise to facilitate the systematic study of larger proteins. Sensing and identification of these biomolecules using nanopores happens by studying modulations in ionic current during translocation. The approach taken in this work was to study two miniproteins of similar geometry, using a cylindrical-shaped pore. I employed molecular mechanics to compare occupied pore currents computed based on the trajectory of ions. I further used density functional theory along with relative surface accessibility values to compute changes in interaction energies for single amino acids and obtain relative dwell times. While the protein remained inside the nanopore, I found no noticeable differences in the occupied pore currents of the two miniproteins for systems subject to 0.5 and 1.0 V bias voltages. Dwell times were estimated based on the translocation time of a protein that exhibits no interaction with the pore walls. I found that both miniproteins feel an attractive force to the pore wall and estimated their relative dwell times to differ by one order of magnitude. This means even in cases where two miniproteins are indistinguishable by magnitude changes in the ionic current, the dwell time might still be used to identify them. This work was an initial investigation that can be further developed to increase the accuracy of the results and be expanded to assess other miniproteins with the goal to aid future experimental work.

Silicon nitride on steel sliding contacts may provide advantageous tribological properties over traditional self-mated pairs, however the friction and wear behavior at high sliding speeds (>1 m/s) is not well understood. Previous studies at low sliding speeds (< 1 m/s) have found that the wear mechanisms change as a function of the operating parameters, e.g. atmosphere, sliding speed, load, and temperature, due to the formation of transition metal oxides such as Fe2O3 and Fe3O4. This study detected transient effects of the dry silicon nitride on steel contact over a range of sliding speeds to understand their relation to tribochemical reactions and the resulting tribological behavior. Two sets of dry silicon nitride on steel experiments were conducted at 1.45 GPa maximum Hertzian pressure. The first set were low sliding speed reciprocating experiments, conducted at an average of 0.06 m/s, conducted at variable operating temperature, ranging from 23 °C to 1000 °C. In the low sliding speed experiments, transitions of the wear mechanism from adhesive wear, to abrasive wear, then to oxidative wear was observed when the operating temperature increased. The second set were high sliding speed experiments, conducted at variable sliding speeds, ranging from 1 m/s to 16 m/s. In the high sliding speed experiments, a transition from adhesive wear to oxidative wear was observed when the sliding speed surpassed 4.5 m/s. The high sliding speed experiments were accompanied by in-situ instrumentation which detected the presence of a tribofilm which correlated to a reduction in friction, and its formation was linked to tribochemical reactions induced by high flash temperatures. Both sets of experiments had a maximum estimated contact temperature of 1000 °C where oxidative wear was prevalent. Although, the low sliding speed experiments underwent severe bulk oxidation and thermal softening effects, while the high sliding speed experiments experienced localized flash heating events with temperatures sufficient to form a semi-coherent tribofilm that was lubricious and significantly improved wear resistance. Therefore, the effects of transition metal oxides in sliding contacts are determined to be significantly influenced on their mechanisms of formation and interrelated to the operating parameters as found for dry sliding silicon nitride on steel contacts.

<p>Rare-earth ions (REIs) in solids are attractive optical centers due to their stable optical transitions and long lifetimes. Miniaturizing solid-state devices incorporated with REIs as quantum centers can play a key role in the implementation of future multiplexed quantum optical networks. Among the solid-state host materials for REIs, the Dissertation specifically studies silicon nitride (SiN) and crystalline lithium niobate (LN) materials. </p> <p><br></p> <p>SiN and Si are a CMOS-compatible material, and leveraging the well-developed technologies from the microelectronics industry is important for practical purposes because the cost of fabrication can be significantly reduced. Also, a recent study showed that the inhomogeneous broadening of Er-doped crystalline Si can be as low as 1GHz. Moreover, low-loss waveguide and high Q resonators were reported, making it a promising host for strong light-atom interactions. </p> <p><br></p> <p>On the other hand, LN is a promising host material for REIs due to its unique piezoelectric, electro-optic, nonlinear, and acousto-optic properties. Until recently, direct etching of LN has not been realized. But recently developed lithium niobate on insulator (LNOI) platform and direct LN etching techniques made it possible to fabricate low loss and strong confinement waveguides. Furthermore, LN has been used for quantum light storage and on-chip photon generation and wavelength conversion. Motivated by these recent advances and the interesting properties of LN, the Dissertation investigates thin-film crystalline LN. </p> <p><br></p> <p>In this dissertation, the methods and processes of fabricating long waveguides and ring resonators in 1)silicon nitride and 2)lithium niobate are introduced and the study of optical characterizations of Yb3+ ions in two different solid-state host materials are presented, specifically including photoluminescence (PL) spectroscopy, lifetime measurement, absorption and other characterization of light-atom interactions. </p> <p><br></p> <p>Furthermore, a study of Tm3+ ion arrays in thin-film LN is presented, specifically including the PL lifetime comparison between the periodically ordered sample and the randomly ordered sample and the scattering/reflection measurement from periodic ion arrays, both indicating the early evidence of cooperative effects of arrays in solids. Also, the theory of collective emission from atomic arrays is presented. Finally, I propose future plans to improve the fabrication process in these materials and possible future research directions based on the Dissertation.</p>

Als Graphen bezeichnet man eine einzelne freistehende Lage des Schichtkristalls Graphit. Im Gegensatz zur mechanischen Isolation von Graphit bietet die Züchtung auf Siliziumkarbid eine Methode zur großflächigen Herstellung von Graphen. Aufgrund der besonderen physikalischen Eigenschaften werden für Graphen viele verschieden Einsatzmöglichkeiten in diversen Bereichen prognostiziert. Mit seiner hohen Ladungsträgerbeweglichkeit ist Graphen besonders als Kanalmaterial für Feldeffekttransistoren (FET) interessant. Allerdings muss hierfür unter anderem ein geeignetes FET-Isolatormaterial gefunden werden. In dieser Arbeit wird eine detaillierte, theoretische Beschreibung der Graphen-FETs vorgestellt, die es erlaubt die steuerspannungsabhängige Hall-Konstante zu berechnen. Mit der dadurch möglichen Analyse können wichtige Kenngrößen, wie z. B. die Grenzflächenzustandsdichte des Materialsystems bestimmt werden. Außerdem wurden zwei Methoden zur Isolatorabscheidung auf Graphen untersucht. Siliziumnitrid, welches mittels plasmaangeregter Gasphasenabscheidung aufgetragen wurde, zeichnet sich durch seine n-dotierende Eigenschaft aus. Damit ist es vor allem für quasi-freistehendes Graphen auf Siliziumkarbid interessant. Bei der zweiten Methode handelt es sich um einen atomaren Schichtabscheidungsprozess, der ohne eine Saatschicht auskommt. An beiden Graphen- Isolator-Kombinationen wurde die neue Charakterisierung mittels der Hall-Datenanalyse angewandt.:1 Einleitung 2 Graphen 3 Methoden 4 Die Hall-Konstante von Graphen 5 Siliziumnitrid als Dielektrikum für Graphentransistoren 6 Aluminiumoxid auf epitaktischem Graphen 7 Zusammenfassung A Anhang

Nanopore sensing is a versatile technique that employs very small openings, known as nanopores, to study biomolecules. The use of nanopores on solid-state membranes has gained attention due to its potential for low-cost and high-throughput sensing of single molecules in liquids. Controlled dielectric breakdown (CBD) is a method for fabricating nanopores in a suspended membrane using computer control, and can be performed in liquid, making it a more practical alternative to traditional techniques that require specialized equipment and high vacuum. Multilevel Pulse-Voltage Injection (MPVI) is a variant of CBD that allows for better control over the size and shape of the nanopore being fabricated. The main focus of this research is to develop electrical techniques for fabricating sub-10 nm solid-state nanopores in silicon nitride and graphene membranes, and to study the characteristics of the resulting nanopores. Two different MPVI schemes were implemented for fabricating nanopores in silicon nitride. The MPVI technique for Scheme 1 sets two thresholds to check if a pore is formed or not. Scheme 2 was developed by adding a threshold in order to avoid extra pore enlargement. For nanopores on a silicon nitride membrane with a 23 nm deep hole, the ratio of sub-20 nm pores improved from 20 % (Scheme 1) to around 90 % (Scheme 2). Additionally, the ratio of sub-10 nm nanopores via Scheme 2 was around 70 %. For nanopores on a silicon nitride membrane damaged by a single femtosecond laser pulse, 50 % of the fabricated nanopores via Scheme 2 were sub-10 nm. For bi-layer graphene membranes, the electrochemical reaction (ECR) technique was used to fabricate nanopores, resulting in three nanopores with diameters of 6.4, 5.9, and 1.2 nm. The nanopores on all types of membranes were enlarged using MPVI of Scheme 1, resulting in a successful increase in pore size by 0.1 to 1 nm. Finally, DNA translocation experiments were conducted to verify the suitability of the fabricated nanopores. DNA translocation events were observed using fabricated nanopores on two types of silicon nitride membranes. They are not observed for the graphene nanopore. / Nanopor-avkänning är en mångsidig teknik som använder mycket små öppningar, så kallade nanoporer, för att studera biomolekyler. Användningen av nanoporer på fasta membran har fått uppmärksamhet tack vare dess potential för detektering av enstaka molekyler i vätskor, till lågt pris och med kort genomloppstid. Kontrollerad dielektrisk nedbrytning (CBD) är en metod för att tillverka nanoporer i ett suspenderat membran med hjälp av datorstyrning som kan utföras i vätska, vilket gör den till ett mer praktiskt alternativ till traditionella tekniker som kräver specialiserad utrustning och högt vakuum. Multilevel Pulse-Voltage Injection (MPVI) är en variant av CBD som möjliggör bättre kontroll över storleken och formen på nanoporen som tillverkas. Huvudfokus för denna forskning är att utveckla elektriska tekniker för att tillverka sub-10 nm fasta nanoporer i kiselnitrid och grafenmembran, och att studera egenskaperna hos de resulterande nanoporerna. Två olika MPVI-metoder implementerades för tillverkning av nanoporer i kiselnitrid. MPVI-tekniken i Metod 1 sätter två tröskelvärden för att: kontrollera om en por bildas eller inte, samt för att kontrollera porstorleken. Metod 2 utvecklades genom att lägga till ytterligare ett tröskelvärde för att undvika extra porförstoring. För nanoporer på ett kiselnitridmembran med ett 23 nm djupt hål förbättrades förhållandet mellan porer under 20 nm från 20 % (Metod 1) till cirka 90 % (Metod 2). Dessutom var förhållandet mellan nanoporer under 10 nm med Metod 2 cirka 70 %. För nanoporer på ett kiselnitridmembran som skadats av en femtosekundlaserpuls, även om en nanopor med en diameter under 5 nm inte tillverkades, var 50 % av de tillverkade nanoporerna via Metod 2 under 10 nm. För tvåskiktsgrafenmembran användes den elektrokemiska reaktionstekniken (ECR) för att tillverka nanoporer, vilket resulterade i tre nanoporer med diametrar på 6,4; 5,9 och 1,2 nm. Nanoporerna på alla typer av membran förstorades med MPVI i Metod 1, vilket resulterade i en framgångsrik förstoring av porstorleken med 0,1 till 1 nm. Slutligen genomfördes experiment med DNA-translokation för att verifiera lämpligheten av de tillverkade nanoporerna. DNA-translokationshändelser observerades med hjälp av tillverkade nanoporer på två typer av kiselnitridmembran. De observeras inte för grafen-nanoporen.

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