O polimento das rochas ornamentais é um processo realizado com o uso de rebolos abrasivos que desgastam a superfície da chapa até atingir uma intensidade de brilho comercialmente desejável. Esse sistema pode ser abordado, de forma racional, pelo enfoque dado pela Tribologia, considerando o atrito e o desgaste como resultado direto da interação entre as rochas e ferramentas abrasivas, de acordo com cada situação operacional adotada. Essa abordagem foi utilizada na presente pesquisa, com o objetivo de tentar validar a metodologia de desenvolvimento de um novo abrasivo de polimento, composta pela resina poliuretana à base óleo de mamona (Ricinus Comunnis L.), cargas sólidas e com o carbeto de silício verde como elemento de corte. Foram avaliados o desempenho destes rebolos frente ao polimento com os rebolos industriais em uma politriz semiautomática, pela análise da taxa de desgaste das peças em função da qualidade do brilho final do polimento. Para isto, foram adotadas condições operacionais que não são praticadas pela indústria, como a variação da velocidade de rotação dos rebolos e variação da vazão de água no polimento. Os resultados mostraram que a proposta de incorporação do carbeto de silício verde como elemento de corte nas matrizes à base resina de mamona à não promoveu um bom desempenho do rebolo, porém com taxas de desgaste equivalentes às matrizes comerciais à base de resina epóxi, demonstrando o potencial de utilização desta resina na fabricação de rebolos abrasivos diamantados. A variação dos parâmetros operacionais de polimento permitiu saber que os melhores resultados se deram com a redução da vazão de água no polimento de 30 para 15 litros, apresentando maiores valores de brilho e com um menor desgaste dos rebolos. Esses dados indicam que esse parâmetro pode ser aplicado na indústria com consideráveis ganhos ambientais para a cadeia produtiva de rochas ornamentais. Neste âmbito, a utilização de uma ferramenta ecoeficiente, comprovadamente atóxica, no polimento de rochas ornamentais pode ser um grande passo para a obtenção de certificados internacionais de comércio de produtos com forte apelo ambiental. / The polishing of dimension stones is a process carried out using abrasive fickerts which wear the surface of the slab to achieve a commercially desirable brightness intensity. This system can be approached in a rational way by the concepts given by Tribology, considering the friction and wear as a direct result of the interaction between the stone and the abrasive tools, according to each operational situation adopted. This approach was used in the present research, aiming the validation of a methodology for development a new polishing tool, composed of polyurethane resin based on the castor oil (Ricinus Comunnis L.), solid fillers and the green silicon carbide as cutting element. The performance of these new abrasive fickerts compared with the industrial ones was evaluated in a semiautomatic polishing machine by the analysis of the wear rate of the pieces as a function of the final gloss quality of the polished surface. For this purpose, operating conditions not practiced in the industry was adopted, as the rotational speed of the abrasive tools and the water flow variation. The results showed that the incorporation of the green silicon carbide as a cutting element in the matrix based on the resin of castor oil did not promote a good performance of the tool, but with wear rates equivalent to the commercial epoxy-resin fickerts, which may indicate a potential of using the non-toxic matrix with diamond as cutting element instead. The variation of the operational parameters of polishing allowed to know that the best results were obtained with the reduction of the water flow in the polish from 30 to 15 liters/minute, which presented higher values of gloss and with a lower wear rate of the tools, indicating that this parameter can be applied in the industry with considerable environmental gains for the dimension stone production chain. In this context, the use of a non-toxic and eco-efficient tool in the polishing of dimension stones can be a great step towards obtaining international certificates of trade in products with strong environmental appeal.

This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1]–[7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metal–oxide–semiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10]–[15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity problems. Using a combination of nitridation and oxidation processes, a sandwich technique (nitridation–oxidation–nitridation) has been proposed and verified to solve the lengthy and expensive oxide-growing process in direct nitric oxide (NO) gas [1]. The nitrogen source from the toxic-NO gas has been replaced by using a nontoxic nitrous oxide (N2O) gas. The best combination of process parameters in this gas is oxide-growing temperature at 1300oC with 10% N2O [2], [3]. The quality of nitrided gate oxides obtained by this technique is lower than the sandwich technique [6], [13]. Using 4H SiC-based MOS with nitrided gate oxides grown by either of the abovementioned nitridation techniques, the fundamentals of electron-hole generation have been investigated using high-temperature capacitance–transient measurements. The contributions of carrier generation, occurring at room temperature, in the bulk and at the SiC–SiO2 interface are evaluated and compared using a newly developed method [8], [9]. The effective bulk-generation rates are approximately equal for both types of nitrided oxides, whereas the effective surface-generation rates have been shown to exhibit very strong dependencies on the methods of producing the nitrided gate oxide. Based on analysis, the prevailing generation component in a SiC-based MOS capacitor with nitrided gate oxide is at SiC–SiO2 interface located below the gate. Utilizing the understanding of electron-hole generation in SiC, the nonvolatile characteristics of memory device fabricated on SiC have been explored. The potential of developing a SiC-based one-transistor one-capacitor (1T/1C) nonvolatile-dynamic memory (NDM) has been analyzed using SiC-based MOS capacitors as storage elements or test structures. Three possible leakage mechanisms have been evaluated [10]–[16]: (1) leakage via MOS capacitor dielectric, (2) leakage due to electron-hole generation in a depleted MOS capacitor, and (3) junction leakage due to generation current occurred at a reverse-biased pn junction surrounding the drain region of a select metal–oxide– semiconductor field–effect–transistor (MOSFET). Among them, leakage through capacitor oxide remains an important factor that could affect the nonvolatile property in the proposed device, whereas others leakage mechanisms are insignificant. Based on the overall results, the potential of developing a SiC-based 1T/1C NDM is encouraging.

<p>While the car fleet becomes increasingly larger it is important to lower the amounts of pollutants from each individual diesel or gasoline engine to almost zero levels. The pollutants from these engines predominantly originate from high NO_x emissions and particulates, in the case when diesel is utilized, and emissions at cold start from gasoline engines. One way of treating the high NO_x levels is to introduce ammonia in the diesel exhausts and let it react with the NO_x to form nitrogen gas and water, which is called SCR (Selective Catalytic Reduction). However, in order to make this system reduce NO_x efficiently enough for meeting future legislations, closed loop control is required. To realize this type of system an NO_x or ammonia sensor is needed. The cold start emissions from gasoline vehicles are primarily due to a high light-off time for the catalytic converter. Another reason is the inability to quickly heat the sensor used for controlling the air-to-fuel ratio in the exhausts, also called the lambda value, which is required to be in a particular range for the catalytic converter to work properly. This problem may be solved utilizing another, more robust sensor for this purpose.</p><p>This thesis presents the efforts made to test the SiC-based field effect transistor (SiC-FET) sensor technology both as an ammonia sensor for SCR systems and as a cold start lambda sensor. The SiC-FET sensor has been shown to be highly sensitive to ammonia both in laboratory and engine measurements. As a lambda sensor it has proven to be both sensitive and selective, and its properties have been studied in lambda stairs both in engine exhausts and in the laboratory. The influence of metal gate restructuring on the linearity of the sensor has also been investigated. The speed of response for both sensor types has been found to be fast enough for closed loop control in each application.</p> / On the day of the public defence of the doctoral thesis, the status of article III was: in press. Report code: LiU-Tek-Lic-2003:50.

The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. The DC and RF performance of 4H-SiC RF Power MESFETs have been studied through two-dimensional electro-thermal simulations using commercial software MEDICI and ISE. The simulated characteristics of the transistors were compared with the measurement results. Performance degradation of transistors under self-heating and high operating temperatures have been analyzed in terms of gate and drain characteristics, power density, high frequency current gain and power gain. 3D thermal simulations have been performed for single and multi-finger MESFETs and the simulated junction temperatures and temperature profiles were compared with the results from electro-thermal simulations. The reduction in drain current caused by self-heating was found to be more prominent for transistors with more fingers and it imposes a limitation on both the output power and the power density (in W/mm) of multi-fingered large area devices. Thermal issues for design of high power multi-fingered SiC MESFETs were also investigated. A couple of useful ways to reduce the self-heating effects were discussed. Trap-induced performance instabilities of the devices were analyzed by carrying out DC, transient, and pulse measurements at room and elevated temperatures. Electrical characteristics of 4H-SiC BJTs have been measured. A reduction in current gain at elevated temperatures was observed. Based on the collector current-voltage diagram measured at three different ambient temperatures the junction temperature was extracted using the assumption that the current gain only depends on the temperature. Temperature measurements have been carried out for SiC BJTs. Thermal images of a device under operation were recorded using an infrared camera. 3D thermal simulations were conducted using FEMLAB. Both the simulations and the measurement showed a significant temperature increase in the vicinity of the device when operated at high power densities, thus causing the decrease of the DC current gain. The junction temperatures obtained from the thermal imaging, simulation and extraction agree well.

The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. However, in order to compete on the market, it is crucial to a have high current gain and a breakdown voltage close to ideal. Moreover, the absence of conductivity modulation and long-term stability has to be solved. In this thesis, these topics are investigated comparing simulations and measurements. Initially, an efficient etched JTE has been simulated and fabricated. In agreement with the simulations, the fabricated diodes exhibit the highest BV of around 4.3 kV when a two-zone JTE is implemented. Furthermore, the simulations and measurements demonstrate a good agreement between the electric field distribution inside the device and the optical luminescence measured at breakdown. Additionally, an accurate model to simulate the forward characteristics of 4H-SiC BJTs is presented. In order to validate the model, the simulated current gains are compared with measurements at different temperatures and different base-emitter geometries. Moreover, the simulations and measurements of the on-resistance are compared at different base currents and different temperatures. This comparison, coupled with a detailed analysis of the carrier concentration inside the BJT, indicates that internal forward biasing of the base-collector junction limits the BJT to operate at high current density and low forward voltage drop simultaneously. In agreement with the measurements, a design with a highly-doped extrinsic base is proposed to alleviate this problem. In addition to the static characteristics, the comparison of measured and simulated switching waveforms demonstrates that the SiC BJT can provide fast switching speed when it acts as a unipolar device. This is crucial to have low power losses during transient. Finally, the long-term stability is investigated. It is observed that the electrical stress of the base-emitter diode produces current gain degradation; however, the degradation mechanisms are still unclear. In fact, the analysis of the measured Gummel plot suggests that the reduction of the carrier lifetime in the base-emitter region might be only one of the causes of this degradation. In addition, the current gain degradation due to ionizing radiation is investigated comparing the simulations and measurements. The simulations suggest that the creation of positive charge in the passivation layer can increase the base current; this increase is also observed in the electrical measurements. / QC 20120522

Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide. In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and material characterizations were performedusing various techniques, such as I-V, C-V, RBS, XRD, XPS,LEED, SEM, AFM, and SIMS. For the Schottky contacts to n- and p-type 4H-SiC, sputteredTiW Schottky contacts had excellent rectifying behavior afterannealing at 500 ºC in vacuum with a thermally stableideality factor of 1.06 and 1.08 for n- and p-type,respectively. It was also observed that the SBH for p-type SiC(ΦBp) strongly depends on the choice the metal with alinear relationship ΦBp= 4.51 - 0.58Φm, indicating no strong Fermi-level pinning.Finally, the behavior of Schottky diodes was investigated byincorporation of size-selected Au nano-particles in Ti Schottkycontacts on silicon carbide. The reduction of the SBH isexplained by using a simple dipole layer approach, withenhanced electric field at the interface due to the small sizeof the circular patch (Au nano-particles) and large differenceof the barrier height between two metals (Ti and Au) on both n-and p-SiC. For the Ohmic contacts, titanium carbide (TiC) was used ascontacts to both n- and p-type 4H-SiC epilayers as well as onAl implanted layers. The TiC contacts were epitaxiallydeposited using a co-evaporation method with an e-beam Tisource and a Knudsen cell for C60, in a UHV system at low substrate temperature(500 ºC). In addition, we extensively investigatedsputtered TiW (weight ratio 30:70) as well as evaporated NiOhmic contacts on both n- and p-type epilayers of SiC. The bestOhmic contacts to n-type SiC are annealed Ni (&gt;950ºC)with the specific contact resistance of ≈ 8× 10-6Ω cm2with doping concentration of 1.1 × 10-19cm-3while annealed TiW and TiC contacts are thepreferred contacts to p-type SiC. From long-term reliabilitytests at high temperature (500 ºC or 600 ºC) invacuum and oxidizing (20% O2/N2) ambient, TiW contacts with a platinum cappinglayer (Pt/Ti/TiW) had stable specific contact resistances for&gt;300 hours. <b>Keywords</b>: silicon carbide, Ohmic and Schottky contacts,co-evaporation, current-voltage, capacitance-voltagemeasurement, power devices, nano-particles, Schottky barrierheight lowering, and TLM structures.

For roughly fifteen years the military has sought to use the properties of ceramics for armor applications. Current high-performance ceramics have extremely high compressive strengths and low densities. One ceramic that has been shown to be highly resistant under ballistic impact is silicon carbide (SiC). It has been found that even within the silicon carbides, those manufactured by certain methods and those with certain microstructural properties have advantages over others. In order to understand the microstructural reasons behind variations in ballistic properties, plate impact tests were conducted on two sintered silicon carbides with slightly different microstructures. Two variations of a silicon carbide with the trade name Hexoloy SA were obtained through Saint Gobain. Regular Hexoloy (RH) and Enhanced Hexoloy (EH) are pressureless sintered products having exactly the same chemistries. EH went through additional powder processing prior to sintering, producing a final product with a slightly different morphology than RH. Samples of each were characterized microstructurally including morphology, density, elastic wavespeeds, microhardness, fracture toughness, and flexure strength. The characterization revealed differences in porosity distribution and flexure strength. It was determined that the porosity distribution in EH had fewer large pores leading to an 18% increase in flexural strength over that for RH. The focus of the mechanics of materials community concerning dynamic material behavior is to pin down what exactly is happening microstructurally during ballistic events. Several studies have been conducted where material properties of one ceramic type are varied and the dynamic behavior is tested and analyzed. Usually, from one variation to the next, several properties are different making it hard to isolate the effect of each. For this study, the only difference in the materials was porosity distribution. Plate impact experiments were conducted at the Army Research Laboratory (ARL) using the gas gun facilities within the Impact Physics Branch. A VISAR was utilized to measure free surface velocities. Tests were performed on each material to determine the Hugoniot Elastic Limit (HEL) and spall strength. Spall strength was measured as a function of impact stress, and pulse duration.

The structure and the energy band gap of hydrogenated amorphous silicon carbide are theoretically revised. In the light of defect pool model, density of states distribution is investigated for various regions of mobility gap. The films are deposited by plasma enhanced chemical vapor deposition system with various gas concentrations at two different, lower (30 mW/cm2) and higher (90 mW/cm2), radio frequency power densities. The elemental composition of hydrogenated amorphous silicon carbide films and relative composition of existing bond types are analyzed by x-ray photoelectron spectroscopy measurements. The thicknesses, deposition rates, refractive indices and optical band gaps of the films are determined by ultraviolet visible transmittance measurements. Uniformity of the deposited films is analyzed along the radial direction of the bottom electrode of the plasma enhanced chemical vapor deposition reactor. The molecular vibration characteristics of the films are reviewed and analyzed by Fourier transform infrared spectroscopy measurements. Electrical characteristics of the films are analyzed by dc conductivity measurements. Conduction mechanisms, such as extended state, nearest neighbor and variable range hopping in tail states are revised. The hopping conductivities are analyzed by considering the density of states distribution in various regions of mobility gap. The experimentally measured activation energies for the films of high carbon content are too low to be interpreted as the difference between Fermi level and relevant band edge. This anomaly has been successfully removed by introducing hopping conduction across localized tail states of the relevant band. In other words, the second contribution lowers the mobility edge towards the Fermi level.

Achieving light weight armor design has become an important engineering challenge in the last three decades. As weapons becoming highly sophisticated, so does the ammunition, potential targets have to be well protected against such threats. In order to provide mobility, light and effective armor protection materials should be used. In this thesis, numerical simulation of the silicon carbide armor backed by KevlarTM composite and orthogonally impacted by 7.62mm armor piercing (AP) projectile at an initial velocity of 850 m/s is analyzed by using AUTODYN hydrocode. As a first step, ceramic material behavior under impact conditions is validated numerically by comparing the numerical simulation result with the test result which is obtained from the literature. Then, different numerical simulations are performed by changing the backing material thickness, i.e. 2, 4, 6 and 8mm, while the thickness of the ceramic is held constant, i.e. 8mm. At the end of the simulations, optimum ceramic/composite thickness ratio is sought. The results of the simulations showed that for the backing thickness values of 4, 6 and 8mm, the projectile could not perforate the armor system. On the contrary, the projectile could penetrate and perforate the armor system for the backing thickness value of 2mm and it has still some residual velocity. From these results, it is inferred that the optimum ceramic/composite thickness ratio is equal to about 2 for the silicon carbide and kevlar configuration.

Porous carbon derived from an inorganic silicon carbide (SiC) precursor, termed SiC-derived carbon, is an attractive material for electrochemical energy storage applications, including electrodes for electrical double layer capacitors (EDLCs). The objective of this thesis is to investigate the effects that the carbide-derived carbon (CDC) microstructure and pore structure have on the energy and power characteristics of the EDLC electrodes. Conventional SiC CDC is produced from non-porous crystalline SiC powder at temperatures above 800 °C. Here we studied the performance of SiC CDCs produced by chlorination at 700-900 °C of an ordered mesoporous SiC precursor, which was synthesized via a 1000 °C pyrolysis of polycarbosilane infiltrated into an SBA-15 silica template having ordered mesopores. The SiC CDC was purified from chlorine impurities by annealing in ammonia. The surface area and pore size of the purified SiC CDC was characterized via N2 and CO2 sorption using density functional theory (DFT) and Brunnauer, Emmet, and Teller (BET) theory. The specific capacitance, power and energy densities were characterized via electrochemical measurements of the SiC CDC electrodes in 1 M tetraethylammonium tetrafluoroborate (TEABF4) acetonitrile solution. The SiC CDC exhibited a specific surface area (SSA) in excess of 2400 m2/g and gravimetric capacitance values of up to ~ 150 F/g, among the highest ever reported for any electrodes in this electrolyte. The ordered mesopores allowed for fast ion transport within each particle, resulting in excellent capacity retention under high current rates and ultra-fast frequency response, thus allowing for extremely high power and energy densities. The best overall performance was achieved in SiC CDC samples chlorinated at the lowest temperature of 700 °C.