This dissertation describes the development of a process for the precise positioning of semiconductor nanoparticles grown by hot wire chemical vapor deposition and thermal chemical vapor deposition on amorphous dielectrics, and it presents two studies that demonstrate the process. The studies entailed growth and characterization using surface science techniques and scanning electron microscopy. The two systems, Ge nanoparticles on HfO₂ and Si nanoparticles on Si₃N₄, are of interest because their electronic properties show potential in flash memory devices. The positioning technique resulted in nanoparticles deposited within 20 nm diameter feature arrays having a 6x10¹⁰ cm⁻² feature density. Self-assembling diblock copolymer poly(styrene-b-methyl methacrylate) thin films served as the patterning soft mask. The diblock copolymer features were transferred using a CHF₃/O₂ reactive ion etch chemistry into a thin film SiO₂ hard mask to expose the desired HfO₂ or Si₃N₄ deposition surface underneath. Selective deposition upon exposed pore bottoms was performed at conditions where adatom accumulation occurred on the HfO₂ or Si₃N₄ surfaces and not upon the SiO₂ mask template. The selective deposition temperatures for the Ge/HfO₂ and Si/Si₃N₄ systems were 700 to 800 K and 900 to 1025 K, respectively. Germanium nucleation on HfO₂ is limited from hot wire chemical vapor deposition by depositing nanoparticles within 67% of the available features. Unity filling of features with Ge nanoparticles was achieved using room temperature adatom seeding before deposition. Nanoparticle shape and size are regulated through the Ge interactions with the SiO₂ feature sidewalls with the adatom removal rate from the features being a function of temperature. The SiO₂ mask limited Ge nanoparticle growth laterally to within ~5 nm of the hard mask at 800 K. Silicon deposition on patterned Si₃N₄ has multiple nanoparticles, up to four, within individual 20 nm features resulting from the highly reactive Si₃N₄ deposition surface. Silicon nucleation and continued nanoparticle growth is a linear function of deposition flux and an inverse function of sample temperature. Diblock copolymer organization can be directed into continuous crystalline domains having ordered minority phases in a process known as graphoepitaxy. In graphoepitaxy forced alignment within microscopic features occurs provided certain dimensional constraints are satisfied. Graphoepitaxy was attempted to precisely locate 20 nm diameter features for selective Ge or Si deposition and initial studies are presented. In addition to precise nanoparticle positioning studies, kinetic studies were performed using the Ge/HfO₂ material system. Germanium hot wire chemical vapor deposition on unpatterned HfO₂ surfaces was interpreted within the mathematical framework of mean-field nucleation theory. A critical cluster size of zero and critical cluster activation energy of 0.4 to 0.6 eV were estimated. Restricting HfO₂ deposition area to a 200 nm to 100 [mu]m feature-width range using SiO₂ decreases nanoparticle density compared to unpatterned surfaces. The studies reveal the activation energies for surface diffusion, nucleation, and Ge etching of SiO₂ are similar in magnitude. Comparable activation energies for Ge desorption, surface diffusion and cluster formation obscure the change with temperature an individual process rate has on nanoparticle growth characteristics as the feature size changes. / text

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The goal of this research was to examine the relationship between dislocation density and in-plane residual stress in edge-defined film-fed growth (EFG) silicon wafers. Previous research has shown models for linking dislocation density and residual stress based on temperature gradient parameters during crystal growth. Residual stress and dislocation density have a positive relationship for wafers with very low dislocation density such as Cz wafers. There has been limited success in experimental verifications of residual stress for EFG wafers, without any reference to dislocation density. No model of stress relaxation has been verified experimentally in post production wafers. A model that assumes stress relaxation and links residual stress and dislocation density without growth parameters will be introduced here. Dislocation density and predominant grain orientation of EFG wafers have been measured by the means of chemical etching/optical microscope and x-ray diffraction, respectively. The results have been compared to the residual stress obtained by a near infrared transmission polariscope. A model was established to explain the results linking dislocation density and residual stress in a randomly selected EFG wafer.

Thesis (Ph.D.)--Murdoch University, 2004. / Thesis submitted to the Division of Science and Engineering. Bibliography: 211-229.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

The overall goal of this research is to improve fundamental understanding of the hydrogen passivation of defects in low-cost silicon and the fabrication of high-efficiency solar cells on thin crystalline silicon through low-cost technology development. A novel method was developed to estimate the flux of hydrogen, released from amorphous silicon nitride film, into the silicon. Rapid-firing-induced higher flux of hydrogen was found to be important for higher defect passivation. This was followed by the fabrication of solar cell efficiencies of ~ 17% on low-cost, planar cast multicrystalline silicon. Solar cell efficiencies and lifetime enhancement in the top, middle, and bottom regions of cast multicrystalline silicon ingots were explained on the basis of impurities and defects generally found in those regions. In an attempt to further reduce the cost, high-efficiency solar cells were fabricated on thin crystalline silicon wafers with full area aluminum-back surface field. In spite of loss in efficiency, wafer thinning reduced the module cost. Device modeling was performed to establish a roadmap towards high-efficiency thin cells and back surface recombination velocity and back surface reflectance were identified as critical parameters for high-efficiency thin cells. Screen-printed solar cells on float zone material, with efficiencies > 19% on 300 μm and > 18% on 140 μm were fabricated using a novel low-cost fabrication sequence that involved dielectric rear passivation along with local contacts and back surface field.

In the past decade, great research effort was inspired by the need to realise active optical functionalities in silicon, in order to develop the full potential of silicon as a photonic platform. In this thesis we explore the possibility of achieving tunable delay and optical gain in silicon, taking advantage of the unique dispersion capabilities of photonic crystals. To achieve tunable optical delay, we adopt a wavelength conversion and group velocity dispersion approach in a miniaturised engineered slow light photonic crystal waveguide. Our scheme is equivalent to a two-step indirect photonic transition, involving an alteration of both the frequency and momentum of an optical pulse, where the former is modified by the adiabatic tuning possibilities enabled by slow light. We apply this concept in a demonstration of continuous tunability of the delay of pulses, and exploit the ultrafast nature of the tuning process to demonstrate manipulation of a single pulse in a train of two pulses. In order to address the propagation loss intrinsic to slow light structures, with a prospect for improving the performance of the tunable delay device, we also investigate the nonlinear effect of stimulated Raman scattering as a means of introducing optical gain in silicon. We study the influence of slowdown factors and pump-induced losses on the evolution of a signal beam along the waveguide, as well as the role of linear propagation loss and mode profile changes typical of realistic photonic crystal structures. We then describe the work conducted for the experimental demonstration of such effect and its enhancement due to slow light. Finally, as the Raman nonlinearity may become useful also in photonic crystal nanocavities, which confine light in very small volumes, we discuss the design and realisation of structures which satisfy the basic requirements on the resonant modes needed for improving Raman scattering.

The objective of the work presented in this thesis is to implement high-Q silicon capacitive micromechanical resonators operating in the HF, VHF and UHF frequency bands. Several variations of a fully silicon-based bulk micromachining fabrication process referred to as HARPSS have been developed, characterized and optimized to overcome most of the challenges facing application of such devices as manufacturable electronic components. Several micromechanical structures for implementation of high performance capacitive silicon resonators covering various frequency ranges have been developed under this work. Design criteria and electromechanical modeling of such devices is presented. Under this work, HF and VHF resonators with quality factors in the tens of thousands and RF-compatible equivalent electrical impedances have been implemented successfully. Resonance frequencies in the GHz range with quality factors of a few thousands and lowest motional impedances reported for capacitive resonators to date have been achieved. Several resonator coupling techniques for implementation of higher order resonant systems with possibility of extension to highly selective bandpass filters have been investigated and practically demonstrated. Finally, a wafer-level vacuum sealing technique applicable to such resonators has been developed and its reliability and hermeticity is characterized.