Most of the photovoltaic (solar cell) systems in Sweden today are installed on private houses and connected to the public grid. Photovoltaic (PV) power can be consumed directly in the house, called self-consumption, or fed in to the public grid. For the house owner self-consumed PV energy often has a higher economic value than sold excess PV energy, since the savings from not buying one kWh is larger than the income of selling one kWh. The self-consumption can be expressed as an absolute value; amount of produced/consumed kWh, or as a relative; absolute self-consumption divided with total PV production. The PV production and self-consumption were calculated on an hourly basis. In this Master thesis a MATLAB tool for calculating and optimizing the production, absolute and relative self-consumption and profit for PV systems with panels in one (1DPV), two or three directions (3DPV) was developed. The results show possibilities to increase especially the relative self-consumption with 3DPV. There is however no economic gain of using 3DPV instead of south-directed 1DPV for the studied case; a private house close to Västerås with a 1DPV system of 3360 W and variable electricity prices based on hourly Nord Pool Spot prices. The rated power of the inverter can be decreased with 3DPV compared to south-oriented 1DPV and still keep minimal production losses. A smaller inverter and other peripheral equipment such as cables might compensate for the lower yearly profit with 3DPV when calculating the payback period. Further studies of economic aspects and how to optimize them have to be carried out for 3DPV systems, since economy is very crucial for investment decisions.

The development of organic photovoltaics (OPVs) has attracted a lot of attention due to their potential to create a low cost flexible solar cell platform. In general, an OPV is comprised of a number of layers of thin films that include the electrodes, active layers and barrier films. Thus, with all of the interfaces within OPV devices, the potential for failure exists in numerous locations if adhesion at the interface between layers is inherently low or if a loss of adhesion due to device aging is encountered. To date, few studies have focused on the basic properties of adhesion in organic photovoltaics and its implications on device reliability. In this dissertation, we investigated the adhesion between interfaces for a model multilayer barrier film (SiNx/PMMA) used to encapsulate OPVs. The barrier films were manufactured using plasma enhanced chemical vapor deposition (PECVD) and the interfacial fracture toughness (Gc, J/m2) between the SiNx and PMMA were quantified. The fundamentals of the adhesion at these interfaces and methods to increase the adhesion were investigated. In addition, we investigated the adhesive/cohesive behavior of inverted OPVs with different electrode materials and interface treatments. Inverted OPVs were fabricated incorporating different interface modification techniques to understand their impact on adhesion determined through the interfacial fracture toughness (Gc, J/m2). Overall, the goal of this study is to quantify the adhesion at typical interfaces used in inverted OPVs and barrier films, to understand methods that influence the adhesion, and to determine methods to improve the adhesion for the long term mechanical reliability of OPV devices.

This Bachelor’s degree thesis has been performed on behalf of Upplands Lokaltrafik. The thesis aims to suggest a design of a stand-alone renewable power supply system for the bus stops in Uppland. Because of reorganization of Upplands Lokaltrafik and a change in the electricity act they now have to make the decision of either having the future bus stops connected to the electricity grid, with the requirement of installing an electricity meter at each bus stop, or to implement an off grid solution. Upplands Lokaltrafik has a goal of doubling the number of passengers until 2020 and as a part of reaching this goal the bus stops will be designed with electrical features. This thesis also aims to investigate the electricity demand for these future bus stops. The result of the study shows that a connection to the electricity grid and installation of an electricity meter means an investment cost of approximately 83 500 SEK or 123 500 SEK depending on how far cables have to be drawn. The solution with a photovoltaic system with a 180 Wp solar panel would result in an installation cost of 18 500 SEK, which would be both cheaper and more sustainable for the future. However, a photovoltaic system means higher maintenance and a higher risk of destruction. Depending on choice of batteries and the slope of solar panels, both maintenance and risk of vandalization could be diminished.

Increasing global energy demands and diminishing supplies of conventional fuels are forcing the world to focus more on alternative power sources that are both renewable and ecologically benign. Solar energy is clean, regularly available and can be harvested without sacrificing valuable land space. Due to the associated cost of solar cells, however a very small portion of the world’s energy needs are supplied by the sun. Solution-processable organic photovoltaics (OPVs) offer the promise of lower production costs relative to conventional (silicon) solar cell technology. Solution-processing can be performed using reel-to-reel manufacturing, with printing and coating techniques that are significantly cheaper than current processing methods for inorganic semiconductors. Although OPV efficiency values currently remain inferior to those of conventional solar cells, the rate of improvement is much higher in OPVs than in other solar cell technologies. Recently an efficiency exceeding 10% was reported for organic solar cells. An important difference between organic and conventional solar cells is the charge carrier mobility of the semiconductors, which tends to be relatively low in organic semiconductors. Recent advances in molecular design have led to polymer semiconductor materials that possess hole mobility values similar to that of amorphous silicon. The present study investigates potential improvements in OPV devices that can be achieved through the application of high hole mobility polymer semiconductor donors. Two diketopyrrolopyrrole-based polymers, PDQT and PDBFBT, were selected for the role of electron donor in OPV devices due to their high mobilities and their optimum optical and electrical properties. Optimization of the process parameters was performed using PC61BM as the acceptor. A relatively high quantity of PC61BM (3 - 4 × the weight of the donor) is required in the donor-acceptor blends of both polymers in order to balance the high hole mobility. For these donor-acceptor blends, a solvent system consisting of chloroform/ortho-dichlorobenzene (4:1 v/v) is necessary for proper solubility, and an additive, 1,8-diiodooctane, is required to achieve an acceptable morphology. The main benefit expected from the use of high mobility semiconductors is reduced charge recombination. This was studied in relation to the active layer thickness in standard and inverted OPV devices prepared using PC61BM as the acceptor. Normally the thickness of the active layer is required to be low (~100 nm) due to the poor charge transport mobility of the carriers. In this study, rather consistent power conversion efficiencies were achieved throughout a wide range of active layer thicknesses (~100 nm to ~800 nm). A comparison between standard and inverted device configurations demonstrates that the inverted configuration is more suitable for achieving thicker active layers when a high hole mobility donor is used. This is attributed to the longer hole collection path in the inverted structure, which can benefit from using a high hole mobility material. Increasing the absorption spectra of the donor-acceptor blend was studied by substituting PC71BM for PC61BM. The improved absorption leads to greater charge generation. In PDQT devices, the increase in absorption that is contributed by PC71BM appears to be of greatest benefit when active layers are not very thick. Therefore, when thick active layers (>500 nm) are required, the use of PC61BM is sufficient, in conjunction with a high mobility donor. Finally, an increase in a polymer’s crystallinity can often lead to greater mobility. This can be accomplished through various annealing techniques. The improved crystallinity of PDBFBT that occurs as a result of thermal annealing was studied in OPV applications. Although hole mobility of PDBFBT in the lateral direction improves with thermal annealing, mobility in the vertical direction decreases with increasing temperature. This suggests that the crystallinity of PDBFBT is oriented in the lateral direction as opposed to the vertical direction, thereby directing charge flow horizontal to the surface. With thermal annealing, an optimal amount of PC61BM added to PDBFBT can increase the vertical mobility to fairly high values. Nevertheless, the efficiency of standard and inverted OPV devices decreases with increased annealing temperature. This is attributed to agglomeration of PC61BM that occurs from an increase in annealing temperature. The results of this study demonstrate that thermal annealing is not beneficial for PDBFBT:PC61BM films in OPV applications due to the vertical orientation of devices. All of the studies presented in this work involve the use of high hole mobility polymer semiconductors as donor materials for OPV applications. This work will provide a deeper understanding of the properties required for the development of new semiconductor materials in OPV applications. Furthermore, this work will be very useful for the design of device structures for more feasible manufacturing of large area OPV devices via high speed roll-to-roll printing processes.

A series of experiments was carried out to compare the structural and electronic properties of intrinsic nanocrystalline silicon (nc-Si:H) thin films deposited via continuous wave (cw) and pulsed (p)-PECVD at 150°C substrate temperature. Working at this temperature allows for the easy transfer of film recipes from glass to plastic substrates in the future. During the p-PECVD process the pulsing frequency was varied from 0.2 to 50 kHz at 50% duty cycle. Approximately 15% drop in the deposition rate was observed for the samples fabricated in p-PECVD compared to cw-PECVD. The optimum crystallinity and photo (σph) and dark conductivity (σD) were observed at 5 kHz pulsing frequency, with ~10% rise in crystallinity and about twofold rise in the σph and σD compared to cw-PECVD. However, for both the cw and p-PECVD nc-Si:H films, the observed σph and σD were one to two orders and three orders of magnitude higher respectively than those reported in literature. The average activation energy (EA) of 0.16 ∓ 0.01 eV for nc-Si:H films deposited using p-PECVD confirmed the presence of impurities, which led to the observation of the unusually high conductivity values. It was considered that the films were contaminated by the impurity atoms after they were exposed to air. Following the thin film characterization procedure, the optimized nc-Si:H film recipes, from cw and p-PECVD, were used to fabricate the absorber layer of thin film solar cells. The cells were then characterized for J-V and External Quantum Efficiency (EQE) parameters. The cell active layer fabricated from p-PECVD demonstrated higher power conversion efficiency (η) and a maximum EQE of 1.7 ∓ 0.06 % and 54.3% respectively, compared to 1.00 ∓ 0.04 % and 48.6% respectively for cw-PECVD. However, the observed η and EQE of both the cells were lower than a reported nc-Si:H cell fabricated via p-PECVD with similar absorber layer thickness. This was due to the poor Short-circuit Current Density (Jsc), Open-circuit Voltage (Voc), and Fill Factor (FF) of the cw and p-PECVD cells respectively, compared to the reported cell. The low Jsc resulted from the poor photocarrier collection at longer and shorter wavelengths and high series resistance (Rseries). On the other hand, the low Voc stemmed from the low shunt resistance (Rsh). It was inferred that the decrease in the Rsh occurred due to the inadequate electrical isolation of the individual cells and the contact between the n – layer and the front TCO contact at the edge of the p-i-n deposition area. Additionally, the net effect of the high Rseries and the low Rsh led to a decrease in the FF of the cells.

Solar photovoltaic has become one of the potential solutions for current energy needs and for combating greenhouse gas emissions. The photovoltaics (PV) industry is booming, with a yearly growth rate well in excess of 30% over the last decade. This explosive growth has been driven by market development programs to accelerate the deployment of sustainable energy options and rapidly increasing fossil fuel prices. Currently, the PV market is based on silicon wafer solar cells (thick cells of around 150–300 μm made of crystalline silicon). This technology, classified as the first-generation of photovoltaic cells. The second generation of photovoltaic materials is based on the introduction of thin film layers of semiconductor materials. Unfortunately, the conversion efficiency of the current PV systems is low despite the lower manufacturing costs. Nevertheless, to achieve highly efficient silicon solar cell devices, the development of new high quality materials in terms of structure and electrical properties is a must to overcome the issues related to amorphous silicon (a -Si:H) degradation. Meanwhile, to remain competitive with the conventional energy sources, cost must be taken into consideration. Moreover, novel approaches combined with conventional mature silicon solar cell technology can boost the conventional efficiency and break its maximum limits. In our approach, we set to achieve efficient, stable and affordable silicon solar cell devices by focusing on the development of a new device made of epitaxial films. This new device is developed using new epitaxial growth phosphorous and/or boron doped layers at low processing temperature using plasma enhanced chemical vapor deposition (PECVD). The junction between the phosphorous or boron-doped epitaxial film of the device is formed between the film and the p or n-type crystalline silicon (c-Si) substrate, giving rise to (n epi-Si/p c-Si device or p epi-Si/n c-Si device), respectively. Different processing conditions have been fully characterized and deployed for the fabrication of different silicon solar cells architectures. The high quality epitaxial film (up to 400 nm) was used as an emitter for an efficient stable homojunction solar cell. Extensive analysis of the developed fine structure material, using high resolution transmission electron microscope (HRTEM), showed that hydrogen played a crucial role in the epitaxial growth of highly phosphorous doped silicon films. The main processing parameters that influenced the quality of the structure were; radio frequency (RF) power density, the processing chamber pressure, the substrate temperature, the gas flow rate used for deposition of silicon films, and hydrogen dilution. The best result, in terms of structure and electrical properties, was achieved at intermediate hydrogen dilution (HD) regime between 91 and 92% under optimized deposition conditions of the rest of the processing parameters. The conductivity and the carrier mobility values are good indicators of the electrical quality of the silicon (Si) film and can be used to investigate the structural quality indirectly. The electrical conductivity analyses using spreading resistance profile (SRP), through the detection of active carriers inside the developed films, are presented in details for the developed epitaxial film under the optimized processing conditions. Measurements of the active phosphorous dopant revealed that, the film has a very high active carrier concentration of an average of 5.0 x1019 cm-3 with a maximum value of 6.9 x 1019 cm-3 at the interface between substrate and the epitaxial film. The observed higher concentration of electrically active P atoms compared to the total phosphorus concentration indicates that more than half of dopants become incorporated into substitutional positions. Highly doping efficiency ηd of more than 50 % was calculated from both secondary ion mass spectroscopy (SIMS) and SRP analysis. A variety of proposed structures were fabricated and characterized on planar, textured, and under different deposition temperatures. Detailed studies of the photovoltaic properties of the fabricated devices were carried out using epitaxial silicon films. The results of these studies confirmed that the measured open circuit voltage (Voc) of the device ranged between 575 and 580 mV with good fill factor (FF) values in the range of 74-76 %. We applied the rapid thermal process (RTP) for a very short time (60 s) at moderate temperature of 750oC to enhance the photovoltaic properties of the fabricated device. The following results were achieved, the values of Voc, and the short circuit current (Isc) were 598 mV and 27.5 mA respectively, with a fill factor value of up to 76 % leading to an efficiency of 12.5 %. Efficiency enhancement by 13.06 % was achieved over the reference cell which was prepared without using RTP. Another way to increase the efficiency of the fabricated device is to reduce the reflections from its polished substrate. This was achieved by utilizing the light trapping technique that transforms the reflective polished surface into a pyramidical texturing using alkaline solutions. Further enhancements of both Voc and Isc were achieved with values of 612 mV and 31mA respectively, and a fill factor of 76 % leading to an increase in the efficiency by up to 13.8 %. A noticeable efficiency enhancement by ~20 % over the reference cell is reported for the developed devices on the textured surfaces. Moreover, the efficiency of the fabricated epitaxial silicon solar cells can be boosted by the deployment of silicon nanocrystals (Si NCs) on the top surface of the fabricated devices. In the course of this PhD research we found a way to achieve this by depositing a thin layer of Si NCs, embedded in amorphous silicon matrix, on top of the epitaxial film. Structural analysis of the deposited Si NCs was performed. It is shown from the HRTEM analysis that the developed Si NCs, are randomly distributed, have a spherical shape with a radius of approximately 2.5 nm, and are 10-20 nm apart in the amorphous silicon matrix. Based on the size of the developed Si NCs, the optical band gap was found to be in the region of 1.8-2.2 eV. Due to the incorporation of Si NCs layer a noticeable enhancement in the Isc was reported.

This project is an extension of a pre-existing simulation program (‘Simulation_2dioden’). This simulation program was first developed in Konarka Technologies. The main purpose of the project ‘Simulation_2dioden’ is to calibrate the values of different parameters like, Shunt resistance, Series resistance, Ideality factor, Diode current, epsilon, tau, contact probability, AbsCT, intensity, etc; This is one of the curve fitting procedure’s. This calibration is done by using different equations. Diode equation is one of the main equation’s used in calculating different currents and voltages, from the values generated by diode equation all the other parameters are calculated. The reason for designing this simulation_2dioden is to calculate the values of different parameters of a device and the researcher would know which parameter effects more in the device efficiency, accordingly they change the composition of the materials used in the device to acquire a better efficiency. The platform used to design this project is ‘Microsoft Excel’, and the tool used to design the program is ‘Visual basics’. The program could be otherwise called as a ‘Virtual Solar cell’. The whole Virtual Solar cell is programmed in a single excel sheet. An Automated working solution is suggested which could save a lot of time for the researchers, which is the main aim of this project. To calibrate the parameter values, one has to load the J-V characteristics and simulate the program by just clicking one button. And the parameters extracted by using this automated simulation are Parallel resistance, Series resistance, Diode ideality, Saturation current, Contact properties, and Charge carrier mobility. Finally, a basic working solution has been initiated by automating the simulation program for calibrating the parameter values.

Photovoltaics offers a unique solution to energy and environmental problems simultaneously. However, widespread application of photovoltaics will not be realized until costs are reduced by about a factor of four without sacrificing performance. Silicon crystallization and wafering account for about 55% of the photovoltaic module manufacturing cost, but can be reduced significantly if a ribbon silicon material, such as String Ribbon Si, is used as an alternative to cast Si. However, the growth of String Ribbon leads to a high density of electrically active bulk defects that limit the minority carrier lifetime and solar cell performance. The research tasks of this thesis focus on the understanding, development, and implementation of defect passivation techniques to increase the bulk carrier lifetime in String Ribbon Si in order to enhance solar cell efficiency. Hydrogen passivation of defects in Si can be performed during solar cell processing by utilizing the hydrogen available during plasma-enhanced chemical vapor deposition (PECVD) of SiNx:H films. It is shown in this thesis that hydrogen passivation of defects during the simultaneous anneal of a screen-printed Al layer on the back and a PECVD SiNx:H film increases the bulk lifetime in String Ribbon by more than 30 ?A three step physical model is proposed to explain the hydrogen defect passivation. Appropriate implementation of the Al-enhanced defect passivation treatment leads to String Ribbon solar cell efficiencies as high as 14.7%. Further enhancement of bulk lifetime up to 92 ?s achieved through in-situ NH3 plasma pretreatment and low-frequency (LF) plasma excitation during SiNx:H deposition followed by a rapid thermal anneal (RTA). Development of an optimized two-step RTA firing cycle for hydrogen passivation, the formation of an Al-doped back surface field, and screen-printed contact firing results in solar cell efficiencies as high as 15.6%. In the final task of this thesis, a rapid thermal treatment performed in a conveyer belt furnace is developed to achieve a peak efficiency of 15.9% with a bulk lifetime of 140 ?Simulations of further solar cell efficiency enhancement up to 17-18% are presented to provide guidance for future research.

A simple cost-effective approach was proposed and successfully employed to fabricate high-quality screen-printed (SP) contacts to high sheet-resistance emitters (100 ohm/sq) to improve the Si solar cell efficiency. Device modeling was used to quantify the performance enhancement possible from the high sheet-resistance emitter for various cell designs. It was found that for performance enhancement from the high sheet-resistance emitter, certain cell design criteria must be satisfied. Model calculations showed that in order to achieve any performance enhancement over the conventional ~40 ohm/sq emitter, the high sheet resistance emitter solar cell must have a reasonably good (120,000 cm/s) or low front-surface recombination velocity (FSRV). Model calculations were also performed to establish requirements for high fill factors (FFs). The results showed that the series resistance should be less than 0.8 ohm-cm^2, the shunt resistance should be greater than 1000 ohm-cm^2, and the junction leakage current should be less than 25 nA/cm^2. Analytical microscopy and surface analysis techniques were used to study the Ag-Si contact interface of different SP Ag pastes. Physical and electrical properties of SP Ag thick-film contacts were studied and correlated to understand and achieve good-quality ohmic contacts to high sheet-resistance emitters for solar cells. This information was then used to define the criteria for high-quality screen-printed contacts. The role of paste constituents and firing scheme on contact quality were investigated to tailor the high-quality screen-printed contact interface structure that results in high performance solar cells. Results indicated that small particle size, high glass transition temperature, rapid firing and less aggressive glass frit help in producing high-quality contacts. Based on these results high-quality SP contacts with high FFs0.78 on high sheet-resistance emitters were achieved for the first time using a simple single-step firing process. This technology was applied to different substrates (monocrystalline and multicrystalline) and surfaces (textured and planar). Cell efficiencies of ~16.2% on low-cost EFG ribbon substrates were achieved on high sheet-resistance emitters with SP contacts. A record high-efficiency SP solar cell of 19% with textured high sheet-resistance emitter was also fabricated and modeled.

This research is to synthesize PANI (polyaniline) thin film for polymer organic solar cells as a hole transport layer on the top of ITO substrate by using electrochemical (cyclic voltammetry) method. The device structure is ITO (150 nm) / PANI (50 nm) / P3HT: PCBM (100 nm) / Al (200 nm). We investigated surface morphology, conductivity, and light transmission of the PANI thin film from different aniline monomer concentration and studied the factors on device efficiency, also compared with the device structured with hole transport layer PEDOT:PSS. In this study, we found PANI thin films synthesized with different aniline monomer concentration, their light transmission over 80% at the range of 450 nm ~ 650nm wavelength and the conductivity up to 0.6 S/cm. It shows that PANI thin film suitably act as hole transport layer. In addition, we found morphology of PANI thin film that varied with different aniline monomer concentration. The power conversion efficiency of the device mainly affected by morphology with different aniline monomer concentration. Comparing to other parameters of concentration, the 0.3M aniline monomer concentration polymerized PANI thin film owned the most appropriate surface morphology, and the power conversion efficiency up to 1.76%.