No presente estudo foi analisada a distribuição de tensões, na região anterior de modelo fotoelástico, gerada por arcos de intrusão de incisivos inferiores. Compararam-se as tensões entre diferentes arcos. E ainda, em cada tipo de arco, compararam-se as tensões entre terços radiculares e entre incisivos. O modelo fotoelástico foi construído simulando a extrusão dos incisivos. Foram confeccionados sessenta arcos de intrusão, sendo quinze de cada tipo de mecânica: arco contínuo de Burstone, arco utilitário de Ricketts, arco com dobra de ancoragem usado na mecânica de Begg e arco com curva de Spee reversa usado na mecânica de Tweed. A força de ativação foi mensurada em 50gf na região da linha média. O modelo fotoelástico foi observado em polariscópio circular, na configuração de campo escuro, e fotografado. As fotografias frontais foram analisadas, e as ordens de franjas em cada região registradas. A repetibilidade do método foi identificada pela análise de kappa. A comparação entre as tensões foi realizada pelo teste de Kruskall-Wallis complementado com teste de Dunn. Os resultados obtidos permitiram concluir que na região apical, as maiores magnitudes de tensões foram geradas pelo arco utilitário de Ricketts, seguido pelo arco contínuo de Burstone. Na região média, as maiores magnitudes de tensões foram geradas pelo arco utilitário de Ricketts, seguida por arco contínuo de Burstone, arco com dobra de ancoragem e arco com curva de Spee reversa. Na região cervical, as maiores magnitudes de tensões foram decorrentes do arco utilitário de Ricketts, seguido por arco com curva de Spee reversa e arco com dobra de ancoragem. Os arcos contínuos de Burstone apresentaram as menores tensões na região cervical. Ao se comparar as ordens de franjas entre os terços radiculares, de cada dente, em todos os arcos analisados, as maiores magnitudes de tensões foram observadas nas regiões cervicais. Ao se comparar as ordens de franjas entre os dentes, em cada terço radicular, no arco contínuo de Burstone, as maiores magnitudes de tensões foram observadas nos incisivos laterais. Entretanto, no arco utilitário de Ricketts e no arco com dobra de ancoragem, as maiores magnitudes de tensões foram observadas nos incisivos centrais. No arco com curva de Spee reversa, as maiores magnitudes de tensões foram identificadas nos incisivos esquerdos. Portanto, os resultados do presente estudo permitiram a visualização e compreensão dos efeitos dos diversos arcos de intrusão. Entretanto, estes resultados devem ser observados com cautela, requerendo mais pesquisas que confirmem a reprodutibilidade do método e dos resultados. / In the present study, the distribution of stresses caused by intrusion arches on lower incisors, in the anterior region of photoelastic model, was analyzed. The stresses were compared among the different arches. Additionally, stresses were also compared among the root thirds, as well as among the incisors for each arch type. The photoelastic model was constructed simulating the extrusion of incisors. Sixty intrusion arches were made up, corresponding to fifteen of each type: Burstone continuous arches, Ricketts utility arches, anchorage bend arches used in Begg mechanics and reverse Spee curved arches used in Tweed mechanics. Activation force was measured at 50gf in the midline. The photoelastic model was observed under circular polariscope, in dark-field configuration, and photographed. Frontal photographs were analyzed, and fringe order in each region was recorded. Method repeatability was identified by kappa analysis. A comparison among stresses was carried out using Kruskall-Wallis test and complemented by the Dunn test. Results obtained led to the conclusion that in the apical region, the major stress magnitudes were generated by the Ricketts utility arch, followed by the Burstone continuous arch. In mid-region, the major stress magnitudes were generated by Ricketts utility arch, followed by the Burstone continuous arch, anchorage bend arch, and arch wire with a reverse curve of Spee. In the cervical region, the major stress magnitudes stemmed from Ricketts utility arch, followed by arch with reverse curve of Spee and the anchorage bend arch. The Burstone continuous arches presented the least stresses in the cervical region. On comparing fringe orders among root thirds, of each tooth, in all arches analyzed, major magnitudes of stresses were observed in the cervical regions. On comparing fringe orders among teeth, in each root third, the major magnitudes of stresses were observed in lateral incisors in Burstone continuous arches. However, in both Ricketts utility arches and anchorage bend arches the major stresses magnitudes were observed in central incisors. In arch with a reverse curve of Spee the major magnitudes of stresses were identified in left incisors. Consequently the results in the present study allowed a visualization and understanding of the effects of the diverse intrusion arches. However, such results should be observed with caution, requiring further study to confirm method reproducibility as well as results.

Le fluage est l'un des phénomènes qui influencent le comportement des conducteurs aériens de transport d'énergie électrique. Il s'agit d'une déformation irréversible qui apparaît dans les structures soumises à des charges mécaniques permanentes. Ce phénomène commence à l'instant où la charge est appliquée et continue, à un taux décroissant, aussi longtemps que la charge et la température sont maintenues. Dans les conducteurs en portée, le fluage se manifeste par l'augmentation de la flèche et la réduction des distances sécuritaires entre les lignes et le sol. D'autre part, la température moyenne des conducteurs, transportant en continue un courant électrique important, peut être largement supérieure à la température ambiante, ce qui influence le phénomène de fluage des câbles. Dans ce cadre, s'inscrit ce projet de maîtrise qui consiste à évaluer l'effet de la température sur le comportement en fluage des conducteurs en mesurant l'allongement des fils qui les constituent. Pour ce faire, un banc d'essai de fluage des câbles a été conçu pour étudier le fluage sur les conducteurs et un banc d'essai de fluage des brins a été utilisé pour déterminer le comportement en fluage des fils. Pour les conducteurs, un essai préliminaire de fluage, de 400 heures, a été effectué sur un conducteur de type AAC (Orchid) pour valider le montage expérimental et vérifier l'effet de la mise en place des brins sur le fluage. Le câble a été testé à 38°C et à 25% de sa résistance à la traction assignée (RTA). Pour les essais sur les brins, les fils d'aluminium 1350-H19 et d'almélec ont été testés en fluage pendant 1000 heures. Les fils ont été soumis à quatre niveaux de température d'opération : 20°C, 38°C, 55°C et 70°C et à quatre niveaux de contrainte : 15%, 25%, 35% et 47% RTA pour l'aluminium et 8%, 15%, 25% et 35% RTA pour les fils en almélec. De plus, des essais de traction sur des fils en aluminium et en alliage d'aluminium ont été effectués pour évaluer l'effet du fluage et de la température sur le comportement mécanique des fils isolés. Ces résultats ont permis d'étudier l'effet de la température et de la contrainte sur le fluage des conducteurs à travers le fluage des fils. À partir des données expérimentales, une loi d'évolution de fluage a été établie et tient compte du taux de chargement et de la température.

Au cours de cette thèse on étude deux des plus populaires systèmes de nano-échelle, nano fil et points quantiques (quantum dots), dans le cadre d'une approximation basé sur des premiers principes. Afin d'atteindre cet objectif, nous avons utilisé et développé des théories plus sophistiquées qui nous ont permis d'avoir un meilleur aperçu de la façon dont les systèmes se comportent. Un aspect commun qui limite ces deux types de systèmes (nano fil et points quantiques) est la souplesse de contrôler les propriétés électroniques et optiques. Cette accordabilité des propriétés électroniques et optiques les dote d'un grand intérêt technologique, et elle est la raison de sa popularité / In this thesis we studied two of the most popular nano-scale systems, nano-wires and quantum dots, via a first-principles approach. In order to achieve this objective we have used and developed state-of-the-art theories that allowed us to have a greater insight into the the way this systems behave. One common aspect that bounds this two class of systems (nano-wires and quantum dots) is the flexibility to control their electronic and optical properties. This tunability of their electronic and optical properties, endows them of great technological interest, and is the reason behind their popularity

Topological phases of matter represent a new phase which cannot be understood in terms of Landau’s theory of symmetry breaking and are characterized by non-local topological properties emerging from purely local (microscopic) degrees of freedom. It is the non-trivial topology of the bulk band structure that gives rise to topological phases in condensed matter systems. Quantum Hall systems are prominent examples of such topological phases. Different quantum Hall states cannot be distinguished by a local order parameter. Instead, non-local measurements are required, such as the Hall conductance, to differentiate between various quantum Hall states. A signature of a topological phase is the existence of robust properties that do not depend on microscopic details and are insensitive to local perturbations which respect appropriate symmetries. Examples of such properties are the presence of protected gapless edge states at the boundary of the system for topological insulators and the remarkably precise quantization of the Hall conductance for quantum Hall states. The robustness of these properties can be under-stood through the existence of a topological invariant, such as the Chern number for quantum Hall states which is quantized to integer values and can only be changed by closing the bulk gap. Two other examples of topological phases of matter are topological superconductors and Weyl semimetals. The study of transport in various kinds of junctions of these topological materials is highly interesting for their applications in modern electronics and quantum computing. Another intriguing area to study is how to generate new kind of gapless edge modes in topological systems. In this thesis I have studied various aspects of topological phases of matter, such as electronic transport in junctions of topological insulators and topological superconductors, the generation of new kinds of boundary modes in the presence of granularity, and the effects of periodic driving in topological systems. We have studied the following topics. 1. transport across a line junction of two three-dimensional topological insulators, 2. transport across a junction of topological insulators and a superconductor, 3. surface and edge states of a topological insulator starting from a lattice model, 4. effects of granularity in topological insulators, 5. Majorana modes and conductance in systems with junctions of topological superconducting wires and normal metals, and 6. generation of new surface states in a Weyl semimetal in the presence of periodic driving by the application of electromagnetic radiation. A detailed description of each chapter is given below. • In the first chapter we introduce a number of concepts which are used in the rest of the thesis. We will discuss the ideas of topological phases of matter (for example, topological insulators, topological superconductors and Majorana modes, and Weyl semimetals), the renormalization group theory for weak interactions, and Floquet theory for periodically driven systems. • In the second chapter we study transport across a line junction which separates the surfaces of two three-dimensional topological insulators. The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs. For a time-reversal invariant system, we show that the line junction is characterized by an arbitrary real parameter α; this determines the scattering amplitudes (reflection and transmission) from the junction. The physical origin of α is a potential barrier that may be present at the junction. If the surface velocities have the same sign, edge states exist that propagate along the line junction with a velocity and orientation of the spin which depend on α and the ratio of the velocities. Next, we study what happens if the two surfaces are at an angle φ with respect to each other. We study the scattering and differential conductance across the line junction as functions of φ and α. We also show that there are edge states which propagate along the line junction with a velocity and spin orientation which depend on φ. Finally, if the surface velocities have opposite signs, we find that the electrons must necessarily transmit into the two-dimensional interface separating the two topological insulators. • In the third chapter we discuss transport across a line junction lying between two orthogonal topological insulator surfaces and a superconductor which can have either s-wave (spin-singlet) or p-wave (spin-triplet) pairing symmetry. This junction is more complicated than the line junction discussed in the previous chapter because of the presence of the superconductor. In a topological insulator spin-up and spin-down electrons get coupled while in a superconductor electrons and holes get coupled. Hence we have to use a four-component spinor formalism to describe both spin and particle-hole degrees of freedom. The junction can have three time-reversal invariant barriers on the three sides. We compute the subgap charge conductance across such a junction and study their behaviors as a function of the bias voltage applied across the junction and the three parameters which characterize the barriers. We find that the presence of topological insulators and a superconductor leads to both Dirac and Schrodinger-like features in the charge conductances. We discuss the effects of bound states on the superconducting side on the conductance; in particular, we show that for triplet p-wave superconductors such a junction may be used to determine the spin state of its Cooper pairs. • In the fourth chapter we derive the surface Hamiltonians of a three-dimensional topological insulator starting from a microscopic model. (This description was not discussed in the previous chapters where we directly started from the surface Hamiltonians without deriving them form a bulk Hamiltonian). Here we begin from the bulk Hamiltonian of a three-dimensional topological insulator Bi2Se3. Using this we derive the surface Hamiltonians on various surfaces of the topological insulator, and we find the states which appear on the different surfaces and along the edge between pairs of surfaces. The surface Hamiltonians depend on the orientation of the surfaces and are therefore quite different from the previous chapters. We use both analytical methods based on the surface Hamiltonians (which are derived from the bulk Hamiltonian) and numerical methods based directly on a lattice discretization of the bulk Hamiltonian in order to find surface and edge states. We find that the application of a potential barrier along an edge can give rise to states localized at that edge. These states have an unusual energy-momentum dispersion which can be controlled by applying a potential along the edge; in particular, the velocity of these states can be tuned to zero. The scattering and conductance across the edge are studied as a function of the edge potential. We show that a magnetic field applied in a particular direction can also give rise to zero energy states on certain edges. We point out possible experimental ways of looking for the various edge states. • In the fifth chapter we study a system made of topological insulator (TI) nanocrystals which are coupled to each other. Our theoretical studies are motivated by the following experimental observations. Electrical transport measurements were carried out on thin films of nanocrystals of Bi2Se3 which is a TI. The measurements reveal that the entire system behaves like a single TI with two topological surface states at the two ends of the system. The two surface states are found to be coupled if the film thickness is small and decoupled above a certain film thickness. The surface state penetration depth is found to be unusually large and it decreases with increasing temperature. To explain all these experimental results we propose a theoretical model for this granular system. This consists of multiple grains of Bi2Se3 stacked next to each other in a regular array along the z-direction (the c-axis of Bi2Se3 nanocrystals). We assume translational invariance along the x and y directions. Each grain has top and bottom surfaces on which the electrons are described by Hamiltonians of the Dirac form which can be derived from the bulk Hamiltonian known for this material. We introduce intra-grain tunneling couplings t1 between the opposite surfaces of a single grain and inter-grain couplings t2 between nearby surfaces of two neighboring grains. We show that when t1 < t2 the entire system behaves like a single topological insulator whose outermost surfaces have gapless spectra described by Dirac Hamiltonians. We find a relation between t1, t2 and the surface state penetration depth λ which explains the properties of λ that are seen experimentally. We also present an expression for the surface state Berry phase as a function of the hybridization between the surface states and a Zeeman magnetic field that may be present in the system. At the end we theoretically studied the surface states on one of the side surfaces of the granular system and showed that many pairs of surface states can exist on the side surfaces depending on the length of the unit cell of the granular system. • In the sixth chapter we present our work on junctions of p-wave superconductors (SC) and normal metals (NM) in one dimension. We first study transport in a system where a SC wire is sandwiched between two NM wires. For such a system it is known that there is a Majorana mode at the junction between the SC and each NM lead. If the p-wave pairing changes sign at some point inside the SC, two additional Majorana modes appear near that point. We study the effect of all these modes on the subgap conductance between the leads and the SC. We derive an analytical expression as a function of and the length L of the SC for the energy shifts of the Majorana modes at the junctions due to hybridization between them; the energies oscillate and decay exponentially as L is increased. The energies exactly match the locations of the peaks in the conductance. We find that the subgap conductances do not change noticeably with the sign of . So there is no effect of the extra Majorana modes which appear inside the SC (due to changes in the signs of Δ) on the subgap conductance. Next we study junctions of three p-wave SC wires which are connected to the NM leads. Such a junction is of interest as it is the simplest system where braiding of Majorana modes is possible. Another motivation for studying this system is to see if the subgap transport is affected by changes in the signs of . For sufficiently long SCs, there are zero energy Majorana modes at the junctions between the SCs and the leads. In addition, depending on the signs of the Δ’s in the three SCs, there can also be one or three Majorana modes at the junction of the three SCs. We show that the various subgap conductances have peaks occurring at the energies of all these modes; we therefore get a rich pattern of conductance peaks. Next we study the effects of interactions between electrons (in the NM leads) on the transport. We use a renormalization group approach to study the effect of interactions on the conductance at energies far from the SC gap. Hence the earlier part of this chapter where we studied the transport at an energy E inside the SC gap (so that − < E < Δ) differs from this part where we discuss conductance at an energy E where |E| ≫ . For the latter part we assume the region of three SC wires to be a single region whose only role is to give rise to a scattering matrix for the NM wires; this scattering matrix has both normal and Andreev elements (namely, an electron can be reflected or transmitted as either an electron or a hole). We derive a renormalization group equation for the elements of the scattering matrix by assuming the interaction to be sufficiently weak. The fixed points of the renormalization group flow and their stabilities are studied; we find that the scattering matrix at the stable fixed point is highly symmetric even when the microscopic scattering matrix and the interaction strengths are not symmetric. Using the stability analysis we discuss the dependence of the conductances on the various length scales of the problem. Finally we propose an experimental realization of this system which can produce different signs of the p-wave pairings in the different SCs. • In the seventh chapter we show that the application of circularly polarized electro-magnetic radiation on the surface of a Weyl semimetal can generate states at that surface. The surface states can be characterized by their momenta due to translation invariance. The Floquet eigenvalues of these states come in complex conjugate pairs rather than being equal to ±1. If the amplitude of the radiation is small, we find some unusual bulk-boundary relations: the Floquet eigenvalues of the surface states lie at the extrema of the Floquet eigenvalues of the bulk system when the latter are plotted as a function of the momentum perpendicular to the surface, and the peaks of the Fourier transforms of the surface state wave functions lie at the momenta where the bulk Floquet eigenvalues have extrema. For the case of zero surface momentum, we can analytically derive interesting scaling relations between the decay lengths of the surface states and the amplitude and penetration depth of the radiation. For topological insulators, we again find that circularly polarized radiation can generate states on the surfaces; these states have much larger decay lengths (which can be tuned by the radiation amplitude) than the topological surface states which are present even in the absence of radiation. Finally, we show that radiation can generate surface states even for trivial insulators.

L'objectif de ce travail est de prédire les risques de fissuration par H2S d'aciers au carbone à très haute limite d'élasticité utilisés en environnement pétrolier. Nous nous intéressons aux conditions de sévérité modérées, caractérisées par des teneurs faibles mais non nulles en H2S dans le milieu corrosif. Dans ces environnements, le chargement en hydrogène dans les aciers est lent, et les temps d'incubation avant apparition de fissures internes de type HIC peuvent donc être longs. En complément des essais standards de tenue à la fissuration des aciers, il est donc important de pouvoir disposer de méthodes rapides et fiables d'évaluation des risques de fissuration. La principale technique expérimentale mise en oeuvre est la perméation électrochimique d'hydrogène. Elle est mise à profit afin d'étudier le chargement, la diffusion et le piégeage de l'hydrogène dans différents aciers à haute limite d'élasticité en environnement faiblement concentré en H2S. En complément des essais de perméation, nous effectuons une étude de la fissuration assistée par l'environnement dans différentes conditions de pH et de PH2S. Ces essais permettent d'abord de vérifier l'évolution de la cinétique de fissuration interne en fonction des conditions environnementales. Dans le même temps, nous réalisons des mesures de la quantité d'hydrogène absorbée par le métal, en distinguant les parts d'hydrogène libre, piégé réversiblement et irréversiblement. La confrontation entre les données de diffusion et de piégeage issues des essais de perméation, et des données directes de fissuration et de quantités d'hydrogène absorbé permet l'établissement de seuils de concentrations critiques en hydrogène. Ces seuils sont ensuite utilisés afin de mettre en place une approche empirique prédictive de la fissuration HIC dans les aciers / The work of this thesis applies to flexible pipelines, which are used as risers or flowlines in offshore production. More specifically, it is dedicated to study the risks of hydrogen embrittlement of carbon steel wires used as armors if flexible pipes. The study is focused on low H2S containing medium inducing slow hydrogen entry in steels, thus, potentially long incubation times before embrittlement becomes effective. The first goal of this work is to study the entry, diffusion and trapping of hydrogen into different grades of carbon steel in low H2S concentration environment. The permeation technique will be used, as well as immersion tests of variable duration with characterization of the crack process. Analysis of permeation transients gives information on hydrogen diffusion and hydrogen trapping into steels in function of experimental conditions (pH, PH2S). Immersion tests will be performed complementary to permeation tests in various conditions of pH and PH2S. We verify the cracking evolution with environmental conditions. We also quantify the lattice hydrogen, the reversibly and irreversibly trapped hydrogen absorbed by the materials. Then, using both diffusion properties from permeation tests and cracking data from immersion experiments, we set up a predictive approach to link the risks of H2S cracking for each steel grade in function of the severity of the environment. Applying this method should also allow to establish faster and more reliable comparisons of the hydrogen induced cracking resistance of different steel grades. It should be used as complimentary tool for qualification purposes

In case of charge-transfer complex of TTF:TCNQ lot of work had previously been done on single crystals and thin films to study various interesting properties including phase transitions which were attributed to Peierls instability. But as seen from the review of molecular wires it is clear that apart from synthesis of TTF:TCNQ in molecular wire form, not much was known about the behavior of these wires at low temperatures. There were some open questions listed below, which we tried to address in the thesis Can nanowires of TTF:TCNQ be grown across prefabricated electrodes which are separated by gaps < 1 μm. Can the nanowires grown in such smaller gaps, show Peierls transition, which is the signature of quasi one dimensional conduction. As the size and length of the grown wires are small it was expected that they will have less staking disorder as compared to the thin films. What will be conduction mechanism at low temperatures in such single/few nanowire samples. If the nanowires show Peierls transition and CDW formation at low temperatures, can nonlinear conduction be seen due to motion of CDW, if so how well do they compare with the reported results for TTF:TCNQ single crystals. In case of Cu:TCNQ it can be noted from the above review that even though much advances have been made on synthesizing good quality Cu:TCNQ films and incorporating them in novel device structures, there has been much controversy regarding conduction mechanism. There were many conflicting results in literature regarding switching in these devices. In this thesis work we wanted to address the feasibility of switching in Cu:TCNQ under reduced size of top electrodes and also address few other issues like To grow Cu:TCNQ nanowires by using vapor phase evaporation method Can resistive switching be induced in Cu:TCNQ by using a local probe STM tip (Pt-Rh) operated in high vacuum. Since the measurement will be done in high vacuum what will be the effect of environment (absence of oxygen, water vapor) on reproducibility of resistive switching. Will localized switching depend on the top electrode material. This has been probed by coating different metals on the C-AFM tip and using them as top electrode in conducting mode. With what contact force will we get reproducible resistive switching. Can a device structure be made with an array of top electrode in the form of metal dots (< 10 μm) and study switching using C-AFM. This thesis is divided into seven main chapters and two appendix chapters, which are listed below: In the present chapter 1, a detailed overview and literature survey of charge-transfer complexes TTF:TCNQ and Cu:TCNQ which were relevant to our present study was presented. This was followed by our motivation in undertaking the present work. In chapter 2 the various experimental techniques developed during the course of the thesis work such as e-beam lithography, design of the vacuum chamber for deposition of organic molecules, design of ultra high vacuum scanning tunneling microscope (UHV-STM chamber along with the STM head, modification of conducting AFM for obtaining the switching data have been described. In chapter 3 we describe the preparation of TTF:TCNQ molecular wires across prefabricated electrodes and different measurements done on the samples. In particular the observation Peierls transition in the grown nanowires of TTF:TCNQ and the nonlinear conduction mechanism involved at low temperatures will be discussed in detail. In chapter 4 we describe the preparation of Cu:TCNQ nanowires on Cu substrate using vapor phase technique. Resistive switching measurements done on the Cu:TCNQ nanowires in high vacuum with Pt-Rh tip as top electrode will be discussed in detail. In chapter 5 we describe the resistive switching measurements performed on Cu:TCNQ nanowires with different metal coated C-AFM tips as well as FIB deposited platinum dots as top electrodes. In chapter 6 we make a few comments about possible switching mechanism involved, when STM tip, C-AFM induced as well as platinum coated dots were used as top electrodes. In chapter 7 we conclude this thesis by summarizing the main results. Also we point out the scope for future work that can be based upon the results presented in this work. In Appendix A a brief review of self assembled monolayer (SAM) of alkane thiols is presented followed by details about experiments done for insitu study of growth of SAMs of decanethiol and octadecanethiol on silver substrates using ellipsometry and force-displacement spectroscopy. In Appendix B a brief description of work done to grow isolated nanowires of Cu:TCNQ, between two metal electrodes in planar geometry and in anodic alumina membranes is given.

Reconfigurable field effect transistors (RFET) have the ability to toggle polarity between n- and p- conductance at runtime [1], [2]. The here presented multiple independent gate (MIG) RFET expands the device functionality by offering additional logical inputs, valuable for e.g. efficient XOR or majority gate implementations [3], [4] or the here originally presented multiplexer circuit. Moreover,https://inspec.iet.org/ideas/#controlled-terms for the first time with a top-down RFET approach equal ON-currents are obtained for every configuration while requiring only one supply voltage (VDD).

The diploma thesis deals with the comparison of the conduction with the classic "AlFe" ropes (ACSR technology - aluminium conductor steel reinforced) and the line with the ACCC technology (aluminum core composite core). The first part describes the development of the transmission and distribution network in the Czech Republic. Subsequently types of conductors are described, its construction and main characteristics. The theoretical part also consists of theoretical knowledge about compared types of conductors and knowledge from the field of external lines. During the creation of the theoretical part of the thesis, we gained experience in the advanced functions of Excel, which are later used in practical part. The practical part of the thesis consists of creation of the calculation program itself, instructions and calculation methodology. Included is also an example of use of the program that compars two types of conductors of the same diameter, the same transmitted current and the same weight per unit length.

Depuis la première observation de désaimantation ultra-rapide dans des films de Ni soumis à une excitation laser pulsée, on a assisté à un grand intérêt de comprendre l'interaction entre les impulsions laser ultra-courtes et l'aimantation. Ces études ont conduit à la découverte de la commutation toute optique de l'aimantation dans un alliage de film ferrimagnétique en utilisant des impulsions laser femtosecondes. La commutation toute optique permet un renversement de l’aimantation d’un matériau magnétique sans champ magnétique externe. La direction de l'aimantation résultante est donnée par la polarisation circulaire droite ou gauche de la lumière. La manipulation de l'aimantation par un faisceau laser a longtemps été limité à un seul type de matériau, mais ce mécanisme s'est avéré être un phénomène plus général qui s’applique à une grande variété de matériaux ferromagnétiques, y compris des alliages, des empilements et des hétérostructures, ainsi que des hétérostructures ferrimagnétiques synthétiques de terres-rares. Récemment, nous avons observé le même phénomène dans des films ferromagnétiques simples, ouvrant ainsi la voie à une intégration de l'écriture toute optique dans les dispositifs spintroniques. De plus, dans des matériaux de type [Co/Pt] ou [Co/Ni] avec une polarisation de spin élevée et une anisotropie magnétique perpendiculaire contrôlable, un mouvement de parois de domaines induit par un courant polarisé peut être observé dans des pistes magnétiques (couple spin-orbite ou couple de transfert de spin), ce qui présente un grand intérêt pour des applications spintroniques basse consommation et de densité élevée, telles que le concept de mémoire racetrack et la logique magnétique. Cependant, la densité de courant requise pour le mouvement des parois de domaines est encore trop élevée pour permettre la réalisation de dispositifs à faible puissance. Dans ce contexte innovant, la recherche effectuée dans le cadre de ma thèse s’est concentrée sur la manipulation de parois de domaines dans les pistes fabriquées à partir de films minces à forte anisotropie magnétique perpendiculaire en combinant à la fois les effets du courant polarisé et ceux de la commutation toute optique. Différents films minces ont été explorés afin d'étudier les effets combinés optiques dépendant de l'hélicité et des couples spin-orbite ou de transfert de spin sur le mouvement des parois de domaines. Nous avons montré que les parois de domaine peuvent rester piégées sous une hélicité circulaire du laser et dépiégées par une hélicité circulaire opposée, et la densité de courant polarisé seuil peut être considérablement réduite en utilisant un laser femtoseconde. Nos résultats sont prometteurs pour le développement de nouveaux dispositifs photoniques-spintroniques de faible puissance. / Since the first observation of ultrafast demagnetization in Ni films arising from a pulsed laser excitation, there has been a strong interest in understanding the interaction between ultrashort laser pulses and magnetization. These studies have led to the discovery of all-optical switching (AOS) of magnetization in a ferrimagnetic film alloy of GdFeCo using femtosecond laser pulses. All-optical switching enables an energy-efficient magnetization reversal of the magnetic material with no external magnetic field, where the direction of the resulting magnetization is given by the right or left circular polarization of the light. The manipulation of magnetization through laser beam has long been restricted to one material, though it turned out to be a more general phenomenon for a variety of ferromagnetic materials, including alloys, multilayers and heterostructures, as well as rare earth free synthetic ferrimagnetic heterostructures. Recently, we have observed the same phenomenon in single ferromagnetic films, thus paving the way for an integration of all-optical writing in spintronic devices. Moreover, in similar materials, like [Co/Pt] or [Co/Ni] with high spin polarization and tunable perpendicular magnetic anisotropy (PMA), efficient current-induced domain wall (DW) motion can be observed in magnetic wires, where spin-orbit torque (SOT) or spin transfer torque (STT) provides a powerful means of manipulating domain walls, which is of great interest for several spintronic applications, such as high-density racetrack memory and magnetic domain wall logic. However, the current density required for domain wall motion is still too high to realize low power devices. This is within this very innovative context that my Ph.D. research has focused on domain wall manipulation in magnetic wires made out of thin film with strong perpendicular magnetic anisotropy combining both spin-polarized current and all-optical switching. Different material structures have been explored, in order to investigate the combined effects of helicity-dependent optical effect and spin-orbit torque or spin transfer torque on domain wall motion in magnetic wires based on these structures. We show that domain wall can remain pinned under one laser circular helicity while depinned by the opposite circular helicity, and the threshold current density can be greatly reduced by using femtosecond laser pulses. Our findings provide novel insights towards the development of low power spintronic-photonic devices.

The electron transport through a molecular wire under the influence of an external laser field is studied using a reduced density matrix formalism. The full system is partitioned into the relevant part, i.e. the wire, electron reservoirs and a phonon bath. An earlier second-order perturbation theory approach of Meier and Tannor for bosonic environments which employs a numerical decomposition of the spectral density is used to describe the coupling to the phonon bath and is extended to deal with the electron transfer between the reservoirs and the molecular wire. Furthermore, from the resulting time-nonlocal (TNL) scheme a time-local (TL) approach can be determined. Both are employed to propagate the reduced density operator in time for an arbitrary time-dependent system Hamiltonian which incorporates the laser field non-perturbatively. Within the TL formulation, one can extract a current operator for the open quantum system. This enables a more general formulation of the problem which is necessary to employ an optimal control algorithm for open quantum systems in order to compute optimal control fields for time-distributed target states, e.g. current patterns. Thus, we take a fundamental step towards optimal control in molecular electronics. Numerical examples of the population dynamics, laser controlled current, TNL vs. TL and optimal control fields are presented to demonstrate the diverse applicability of the derived formalism.