abstract: The dissertation encompasses the transformer-less single phase PV inverters for both the string and microinverter applications. Two of the major challenge with such inverters include the presence of high-frequency common mode leakage current and double line frequency power decoupling with reliable capacitors without compromising converter power density. Two solutions are presented in this dissertation: half-bridge voltage swing (HBVS) and dynamic dc link (DDCL) inverters both of which completely eliminates the ground current through topological improvement. In addition, through active power decoupling technique, the capacitance requirement is reduced for both, thus achieving an all film-capacitor based solution with higher reliability. Also both the approaches are capable of supporting a wide range of power factor. Moreover, wide band-gap devices (both SiC and GaN) are used for implementing their hardware prototypes. It enables the switching frequency to be high without compromising on the converter efficiency. Also it allows a reduced magnetic component size, further enabling a high power density solution, with power density far beyond the state-of-the art solutions. Additionally, for the transformer-less microinverter application, another challenge is to achieve a very high gain DC-DC stage with a simultaneous high conversion efficiency. An extended duty ratio (EDR) boost converter which is a hybrid of switched capacitors and interleaved inductor technique, has been implemented for this purpose. It offers higher converter efficiency as most of the switches encounter lower voltage stress directly impacting switching loss; the input current being shared among all the interleaved converters (inherent sharing only in a limited duty ratio), the inductor conduction loss is reduced by a factor of the number of phases. Further, the EDR boost converter has been studied for both discontinuous conduction mode (DCM) operations and operations with wide input/output voltage range in continuous conduction mode (CCM). A current sharing between its interleaved input phases is studied in detail to show that inherent sharing is possible for only in a limited duty ratio span, and modification of the duty ratio scheme is proposed to ensure equal current sharing over all the operating range for 3 phase EDR boost. All the analysis are validated with experimental results. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2017

Ce travail de thèse porte sur la diffusion des porteurs de charge en excès dans deux semiconducteurs à large bande interdite: l’alliage ZnMgO et le diamant 13C. Il est basé sur l’étude d’hétérostructures ZnMgO/ZnO/ZnMgO et 13C/12C/13C à puits de collecte ZnO ou 12C. Sur leurs sections transverses et avec la résolution nanométrique en excitation par cathodoluminescence (CL), nous avons étudié l’évolution de l’intensité de l’émission issue du puits en ZnO ou 12C en fonction de la distance entre l’impact de l’excitation et le puits. Cela nous a permis de mesurer directement les longueurs de diffusion effectives dans ZnMgO et le diamant.Dans ZnMgO, la valeur de 55 nm à 300 K, mesurée sur section transverse clivée, est proche de celle du matériau massif. Elle correspond à une diffusion mixte excitons/porteurs libres. Avec l’utilisation de lames minces érodées par faisceau d’ions, une diminution de a été observée jusqu’à 8 nm dans les parties les plus fines. Cet effet est attribué aux recombinaisons non radiatives de surface. Les lames minces apparaissent alors d’un grand intérêt pour améliorer la résolution spatiale des images CL.Dans le diamant, la diffusion excitonique à basse température montre une faible dépendance de avec l’énergie incidente des électrons. Cela indique que ≈ 15 µm à 20 K dans le diamant massif 13C. Une diminution de jusqu’à 3,3 µm à 118 K est observée en fonction de la température.Enfin, nous avons mis en évidence la formation de polyexcitons dans le diamant en augmentant la densité des paires électron-trou, soit par la puissance d’excitation, soit par le confinement spatial des excitons dans des puits de diamant 12C de faible épaisseurs. / This work focuses on the determination of the carrier diffusion length in two wide bandgap semiconductors: the ternary alloy ZnMgO and diamond. This determination has been achieved by using of ZnMgO/ZnO/ZnMgO and 13C/12C/13C heterostructures containing ZnO or 12C collecting wells. Their transverse section was scanned by CL spectroscopy with a nanometer scale resolution in excitation. The effective excess carrier diffusion length is deduced from the evolution of the well emission intensity with the distance between the excitation impact and the well.In ZnMgO, the value at 300 K is 55 nm, obtained from a cleaved cross section. It is close to the bulk material diffusion and is attributed to a mixed diffusion of excitons/free carriers. A decrease of down to 8 nm is observed in the thinnest portions of cross sections shaped by focused ion beam (FIB). This effect is attributed to non-radiative surface recombinations. These thin slabs appear of great interest to enhance the spatial resolution of CL images.In diamond, the exciton diffusion at 20 K exhibits a slight dependence on the incident electron energy. This indicates that the exciton diffusion length is around 15 µm in 13C bulk diamond. The values decrease down to 3.3 µm at 118 K.Finally, we highlighted the formation of polyexcitons in diamond by increasing the electron-hole pairs density either by the excitation power, or by the spatial confinement of excitons in thin 12C wells.

Die vorliegende Arbeit beschreibt den Verlauf der Forschung von der Entwicklung einer neuartigen Methode der gepulsten Laser-Plasmaabscheidung (PLD) über die Untersuchung der ternären In- und Al-Legierungssysteme von metastabilem orthorhombischen κ-Ga2O3 auf der Basis dieser Methode hin zu Multi-Quantengraben (QW) Supergitter (SL) Heterostrukturen für transparente Quantengrabeninfrarotphotodetektoren (QWIPs). Im ersten Teil wird die Methode, welche vertical continuous composition spread (VCCS) PLD genannt wird, eingeführt und am MgxZn1−xO Legierungssystem erprobt. Die Methode erlaubt die Kontrolle der Komposition von Dünnfilmen über die radiale Position des PLD Laserspots auf der Targetoberfläche. Das ist eine wichtige Voraussetzung für die Bestimmung der kompositionsabhängigen Eigenschaften der Legierungssysteme und für präzise Profile der physikalischen Eigenschaften in Wachstumsrichtung für das Design von Bauelementen. Die Dünnfilme mit 0 ≤ x ≤ 0.4 zeigen die gleichen Eigenschaften wie solche, die mit Standard-PLD abgeschieden wurden. Numerische Modelle werden präsentiert, welche die Dünnfilmkomposition exakt vorhersagen. Im zweiten Teil werden κ-Ga2O3 Dünnfilme durch die Beigabe von Zinn während des PLD Prozesses stabilisiert. Die Dünnfilme weisen hohe kristalline Qualität, glatte Oberflächen und große Bandlücken (Eg ≈ 4.9 eV) auf. Ein Wachstumsmodell wird präsentiert, welches Zinn als Oberflächenschicht beschreibt. Im dritten Teil werden die In- und Al-Legierungssysteme von κ-Ga2O3 mittels VCCS PLD untersucht. Die Löslichkeitsgrenzen xIn <~ 0.35 und xAl <~ 0.65 sind die höchsten bislang berichteten. In- und out-of-plane Gitterkonstanten wurden in Abhängigkeit der Zusammensetzung bestimmt und Eg konnte von 4.1 eV bis 6.4 eV variiert werden. Die Position des Valenzbandmaximums wird als unabhängig von der Komposition gezeigt, womit die Variation in Eg den Leitungsbandunterschieden gleicht und Detektionsbereiche vom fernen IR bis in das Sichtbare für QWIP-Anwendungen bedeutet. Berechnungen anhand dieser Ergebnisse ergeben Polarisationsladungsdichten an Grenzflächen von Heterostrukturen gleich oder höher derer im etablierten AlGaN/GaN System, welche wichtig zur Polarisationsdotierung zur Besetzung des Grundzustandes in QWIPs sind. Dies bestätigt das große Potential der κ-Phase. Im letzten Teil werden erste kohärent gewachsene κ-(AlxGa1−x)2O3/Ga2O3 SL Strukturen untersucht. Glatte Grenzflächen im Bereich weniger Monolagen werden gezeigt und es konnten kritische Dicken für die κ-Ga2O3 QW Schichten bestimmt werden, die für QWIP-Anwendungen genügen. / The presented thesis describes the research path from the development of a novel pulsed laser deposition (PLD) technique over the exploration of the ternary In- and Al-alloy systems of metastable orthorhombic κ-Ga2O3 employing this technique towards multi-quantum well (QW) superlattice (SL) heterostructures for solar-blind quantum well infrared photodetector (QWIP) applications. In the first part, the PLD technique called vertical continuous composition spread (VCCS) PLD employing radially-segmented targets is established and tested on the well-known MgxZn1−xO alloy system. The technique enables direct control of the chemical composition of thin films by a variation of the radial position of the PLD laser spot on the target surface. This is a prerequisite for a discrete compositional screening of alloy properties and the exact tailoring of physical parameters in growth direction for heterostructure device design. The resulting thin films with 0 ≤ x ≤ 0.4 exhibit the same quality as thin films deposited by standard PLD and numerical models are presented that precisely predict the thin film composition. In the second part, κ-Ga2O3 thin films are stabilized by the addition of tin in the PLD process. The thin films show a high crystalline quality, smooth surfaces and large bandgaps (Eg ≈ 4.9 eV). A growth model is proposed based on tin acting as surfactant. In the third part, the In- and Al-alloy systems of κ-Ga2O3 are explored by VCCS PLD. Solubility limits of xIn <~ 0.35 and xAl <~ 0.65 are the highest reported to date. In- and out-of-plane lattice constants were determined as function of alloy composition and bandgap engineering from 4.1 eV to 6.4 eV is feasible within these limits. The energetic position of the valence band maximum was found independent on chemical composition such that the change in bandgap equals the conduction band offset rendering wavelength ranges from far IR to the visible spectral range in QWIP applications possible. Calculations based on these results found polarization charge densities at the interfaces of corresponding heterostructures on par or larger than for the established AlGaN/GaN system important for polarization doping to populate the ground state in QWIPs. This corroborates the high potential of the κ-phase. In the last part, first coherently grown κ-(AlxGa1−x)2O3/Ga2O3 SL heterostructures are presented. Smooth interfaces of the order of a few monolayers are confirmed and critical thicknesses for coherent growth of the Ga2O3 QW layer are found to be sufficient for QWIP applications.

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<p>Recent developments in semiconductor device technology have seen the advent of wide-bandgap (WBG) based devices that enable operation at high switching frequencies. These devices, such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), are becoming a favored choice in inverters for electric drive systems because of their lower switching losses and higher allowable operating temperature. However, the fast switching of such devices implies increased voltage edge rates (high <i>dv/dt</i>) that give rise to various undesirable effects including large common-mode currents, electromagnetic interference, transient overvoltages, insulation failure due to the overvoltages, and bearing failures due to</p> <p>microarcs. With increased use of these devices in transportation and industrial applications, it is imperative that accurate models and efficient simulation tools, which can predict these high-frequency effects and accompanying system losses, be established. This research initially focuses on establishing an accurate wideband model of a surface-mount permanent-magnet</p> <p>ac machine supplied by a WBG-based inverter. A new multirate simulation framework for predicting the transient behavior and estimating the power losses is then set forth. In this approach,</p> <p>the wideband model is separated into high- and low-frequency models implemented using two different computer programs that are best suited for the respective time scales. Repetitive execution of the high-frequency model yields look-up tables for the switching losses in the semiconductors, electric machine, and interconnecting cable. These look-up tables are then incorporated into the low-frequency model that establishes the conduction</p> <p>losses. This method is applied to a WBG-based electric drive comprised of a SiC inverter and permanent-magnet ac machine. Comparisons of measured and simulated transients are provided.</p>

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