Analog to digital converters (ADCs) are the fundamental building blocks in communication systems. The need to design ADCs, which are area and/or power efficient, has been common. Various ADC architectures, constrained by resolution capabilities, can be used for this purpose. The cyclic algorithmic architecture of ADC with moderate number of bits comes out to be probably best choice for the minimum area implementation. In this thesis a cyclic ADC is designed using CMOS 65 nm technology. The ADC high-level model is thoroughly explored and its functional blocks are modelled to attain the best possible performance. In particular, the nonlinearities which affect the cyclic/algorithmic converter are discussed. This ADC has been designed for built-in-self-testing (BiST) on a chip. It is only functional during the testing phase, so power dissipation is not a constraint while designing it. As it is supposed to be integrated as an extra circuitry on a chip, its area really matters. The ADC is designed as 10-bit fully differential switch-capacitor (SC) circuit using 65nm CMOS process with 1.2V power supply. A two stage Operational Transconductance Amplifier (OTA) is used in this design to provide sufficient voltage gain. The first stage is a telescopic OTA whereas the second is a common source amplifier. The bottom plate sampling is used to minimize the charge injection effect which is present in the switches.

Soft errors are radiation-induced ionization events (induced by energetic particles like alpha particles, cosmic neutron, etc.) that cause transient errors in integrated circuits. The circuit can always recover from such errors as the underlying semiconductor material is not damaged and hence, they are called soft errors. In nanometer technologies, the reduced node capacitance and supply voltage coupled with high packing density and lack of masking mechanisms are primarily responsible for the increased susceptibility of SRAMs towards soft errors. Coupled with these are the process variations (effective length, width, and threshold voltage), which are prominent in scaled-down technologies. Typically, SRAM constitutes up to 90% of the die in microprocessors and SoCs (System-on-Chip). Hence, the soft errors in SRAMs pose a potential threat to the reliable operation of the system. In this work, a soft-error-robust eight-transistor SRAM cell (8T) is proposed to establish a balance between low power consumption and soft error robustness. Using metrics like access time, leakage power, and sensitivity to single event transients (SET), the proposed approach is evaluated. For the purpose of analysis and comparisons the results of 8T cell are compared with a standard 6T SRAM cell and the state-of-the-art soft-error-robust SRAM cells. Based on simulation results in a 65-nm commercial CMOS process, the 8T cell demonstrates higher immunity to SETs along with smaller area and comparable leakage power. A 32-kb array of 8T cells was fabricated in silicon. After functional verification of the test chip, a radiation test was conducted to evaluate the soft error robustness. As SRAM cells are scaled aggressively to increase the overall packing density, the smaller transistors exhibit higher degrees of process variation and mismatch, leading to larger offset voltages. For SRAM sense amplifiers, higher offset voltages lead to an increased likelihood of an incorrect decision. To address this issue, a sense amplifier capable of cancelling the input offset voltage is presented. The simulated and measured results in 180-nm technology show that the sense amplifier is capable of detecting a 4 mV differential input signal under dc and transient conditions. The proposed sense amplifier, when compared with a conventional sense amplifier, has a similar die area and a greatly reduced offset voltage. Additionally, a dual-input sense amplifier architecture is proposed with corroborating silicon results to show that it requires smaller differential input to evaluate correctly.

Recently, there have been a great interest in the millimeter-wave (mmW) and terahertz (THz) bands due to the unique features they provide for various applications. For example, the mmW is not significantly affected by the atmospheric constraints and it can penetrate through clothing and other dielectric materials. Therefore, it is suitable for a vast range of imaging applications such as vision, safety, health, environmental studies, security and non-destructive testing. Millimeter-wave imaging systems have been conventionally used for high end applications implementing sophisticated and expensive technologies. Recent advancements in the silicon integrated and low loss material passive technologies have created a great opportunity to study the feasibility of low cost mmW imaging systems. However, there are several challenges to be addressed first. Examples are modeling of active and passive devices and their low performance, highly attenuated channel and poor signal to noise ratio in the mmW. The main objective of this thesis is to investigate and develop new technologies enabling cost-effective implementation of mmW and sub-mmW imaging systems. To achieve this goal, an integrated active Rotman lens architecture is proposed as an ultimate solution to combine the unique properties of a Rotman lens with the superiority of CMOS technology for fabrication of cost effective integrated mmW systems. However, due to the limited sensitivity of on-chip detectors in the mmW, a large number of high gain, wide-band and miniaturized mmW Low Noise Amplifiers (LNA) are required to implement the proposed integrated Rotman lens architecture. A unique solution presented in this thesis is the novel Band Pass Distributed Amplifier (BPDA) topology. In this new topology, by short circuiting the line terminations in a Conventional Distributed Amplifier (CDA), standing waves are created in its artificial transmission lines. Conventionally, standing waves are strongly avoided by carefully matching these lines to 50 ?? in order to prevent instability of the amplifier. This causes that a large portion of the signal be absorbed in these resistive terminations. In this thesis, it is shown that due to presence of highly lossy parasitics of CMOS transistor at the mmW the amplifier stability is inherently achieved. Moreover, by eliminating these lossy and noise terminations in the CDA, the amplifier gain is boosted and its noise figure is reduced. In addition, a considerable decrease in the number of elements enables low power realization of many amplifiers in a small chip area. Using the lumped element model of the transistor, the transfer function of a single stage BPDAs is derived and compared to its conventional counter part. A methodology to design a single stage BPDA to achieve all the design goals is presented. Using the presented design guidelines, amplifiers for different mmW frequencies have been designed, fabricated and tested. Using only 4 transistors, a 60 GHz amplifier is fabricated on a very small chip area of 0.105 mm2 by a low-cost 130 nm CMOS technology. A peak gain of 14.7 dB and a noise figure of 6 dB are measured for this fabricated amplifier. oreover, it is shown that by further circuit optimization, high gain amplification can be realized at frequencies above the cut-off frequency of the transistor. Simulations show 32 and 28 dB gain can be obtained by implementing only 6 transistors using this CMOS technology at 60 and 77 GHz. A 4-stage 85 GHz amplifier is also designed and fabricated and a measured gain of 10 dB at 82 GHz is achieved with a 3 dB bandwidth of 11 GHz from 80 to 91 GHz. A good agreement between the simulated and measured results verifies the accuracy of the design procedure. In addition, a multi-stage wide-band BPDA has been designed to show the ability of the proposed topology for design of wide band mmW amplifiers using the CMOS technology. Simulated gain of 20.5 dB with a considerable 3 dB bandwidth of 38 GHz from 30 to 68 GHz is achieved while the noise figure is less than 6 dB in the whole bandwidth. An amplifier figure of merit is defined in terms of gain, noise figure, chip area, band width and power consumption. The results are compared to those of the state of the art to demonstrate the advantages of the proposed circuit topology and presented design techniques. Finally, a Rotman lens is designed and optimized by choosing a very small Focal Lens Ratio (FL), and a high measured efficiency of greater than 30% is achieved while the lens dimensions are less than 6 mm. The lens is designed and implemented using a low cost Alumina substrate and conventional microstrip lines to ease its integration with the active parts of the system.

Active magnetic bearings (AMBs) have become a key technology in industrial applications with a continued drive for cost reduction and an increase in reliability. AMBs require position feedback to suspend the rotor. Conventional contactless position sensors are used to measure the rotor's position. The major disadvantages of conventional position sensors are their cost and that the sensors are viewed as a weak point in an AMB system. A self-sensing sensor is a type of sensor which is cost effective, reduces sensor wire-length and increases reliability, thus ideal for the industry. This type of sensor relies on the current and voltage signals of the AMB's to obtain the rotor position. Due to the rapid and advanced development of digital electronics, it has become more powerful and cheaper, thus self-sensing in mass production will be cost effective. Different self-sensing approaches were developed in the past and can be divided into two main categories: state estimation and amplitude modulation approaches. In this research the focus will be on the amplitude modulation approach. Amplitude modulation makes use of two signals, namely the modulation signal and the carrier signal. In a self-sensing AMB system the carrier can be a high frequency component injected into the system or the switching ripple of the switch mode power amplifier can be used. The modulation signal is the change in rotor position which results in changing inductances. The actuator material introduces nonlinear effects on the estimated position. Due to these nonlinear effects, it is rather difficult to obtain the rotor position. The first industrial application of a self-sensing turbomolecular pump system was implemented in 2005 by S2M. The aim of this thesis is to evaluate existing self-sensing schemes, devise improvements and investigate possible new schemes. Four different demodulation methods and two new self-sensing schemes are evaluated. An AMB transient simulation model which includes saturation, hysteresis, eddy currents and cross-coupling is used to evaluate the schemes in simulation. The self-sensing schemes are implemented in hardware and evaluated on a 7 A rms 500 N AMB. A comparative study was done on the different self-sensing schemes. From the comparative study it was determined that the gain- and phase effects have a direct effect on the sensitivity of the system. It was also proved that self-sensing can be implemented on a coupled AMB with a sensitivity of 10.3 dB. / Thesis (Ph.D. (Electrical and Electronic Engineering))--North-West University, Potchefstroom Campus, 2009.

Active magnetic bearings (AMBs) have become a key technology in industrial applications with a continued drive for cost reduction and an increase in reliability. AMBs require position feedback to suspend the rotor. Conventional contactless position sensors are used to measure the rotor's position. The major disadvantages of conventional position sensors are their cost and that the sensors are viewed as a weak point in an AMB system. A self-sensing sensor is a type of sensor which is cost effective, reduces sensor wire-length and increases reliability, thus ideal for the industry. This type of sensor relies on the current and voltage signals of the AMB's to obtain the rotor position. Due to the rapid and advanced development of digital electronics, it has become more powerful and cheaper, thus self-sensing in mass production will be cost effective. Different self-sensing approaches were developed in the past and can be divided into two main categories: state estimation and amplitude modulation approaches. In this research the focus will be on the amplitude modulation approach. Amplitude modulation makes use of two signals, namely the modulation signal and the carrier signal. In a self-sensing AMB system the carrier can be a high frequency component injected into the system or the switching ripple of the switch mode power amplifier can be used. The modulation signal is the change in rotor position which results in changing inductances. The actuator material introduces nonlinear effects on the estimated position. Due to these nonlinear effects, it is rather difficult to obtain the rotor position. The first industrial application of a self-sensing turbomolecular pump system was implemented in 2005 by S2M. The aim of this thesis is to evaluate existing self-sensing schemes, devise improvements and investigate possible new schemes. Four different demodulation methods and two new self-sensing schemes are evaluated. An AMB transient simulation model which includes saturation, hysteresis, eddy currents and cross-coupling is used to evaluate the schemes in simulation. The self-sensing schemes are implemented in hardware and evaluated on a 7 A rms 500 N AMB. A comparative study was done on the different self-sensing schemes. From the comparative study it was determined that the gain- and phase effects have a direct effect on the sensitivity of the system. It was also proved that self-sensing can be implemented on a coupled AMB with a sensitivity of 10.3 dB. / Thesis (Ph.D. (Electrical and Electronic Engineering))--North-West University, Potchefstroom Campus, 2009.

This thesis addresses the potential of implementing a predriver for class-D power amplifier for WLAN in 65 nm CMOS technology. In total, eight different predrivers have been created using Cadence Virtuoso CAD tools. All designs have been tested using Agilent's Advance Design System (ADS) and simulated using the ADS-Cadence dynamic link. Furthermore, a comparison between the eight designs and the reference design has been done. The examined parameters were output power (Pout), efficiency, and effective area consumption. The simulation results show that most of the proposed designs obtain higher output power, higher efficiency, and lower effective area than the reference design. For the reference design, output power of 34.2 dBm, efficiency of 20.8 %, and effective area of 63952 um2 were obtained. For design No.1, the effective area was 31511um2, which was almost half of the area occupied by the reference design. For design No.3, the efficiency was 71.2 %, which was almost 3 and half times higher than the efficiency of the reference design. Furthermore, all designs, except design NO.7, gave more or less the same output power (around 34.4 dBm).

In this thesis, I have developed a tunable two-color two-stage ultrafast Yb:fiber chirped pulse amplifier for the generation of short-pulse mid-infrared (MIR) radiation in the long-wavelength side of the "molecular fingerprint" (2.5-25 μm) using difference frequency generation (DFG) technique. The two colors called blue and red are in the wavelengths 1.03-1.11 μm and are amplified simultaneously in the same Yb-doped fiber amplifier (YDFA) stages in order to reduce the induced environmental noise on the phase difference of the pulses and to minimize the complexity and system cost. I will present numerical simulations on the two-stage YDFA system to amplify a two-color spectrum in the wavelengths 1.03-1.11 μm. The first and second YDFA called preamplifier and main amplifier are single-clad, single-mode and double-clad, single-mode YDFA respectively. From numerical simulations, the optimal length of the preamplifier to have equal power at two colors centered at 1043 nm and 1105 nm are in agreement with experimental results. It is well known that the power of MIR radiation generated by difference frequency mixing of two wavelengths scales up with the product of mixing powers in a fixed-field approximation. Furthermore, for the gain narrowing effect on the short-wavelength side of the YDFA gain profile, the spectral bandwidth of the blue color decreases resulting in pulse broadening. In addition, for the two colors separated largely, the amplified spontaneous emission is intensified. Considering the cited factors, I will present the modeling results on the two-color, two-stage YDFA system that the product of the power of the two colors is maximized for a maximized wavelength separation between the two mixing colors and a minimized gain narrowing on the blue color in order to build an as broadly tunable and powerful as possible ultrafast mid-infrared source by difference frequency mixing of the two colors. In this research, I achieved a wavelength separation as broad as 71 nm between pulses centered at 1038 nm and 1109 nm from the two-color ultrafast YDFA system. I achieved combined average powers of 2.7 W just after the main amplifier and 1.5 W after compressing the two-color pulses centered at 1041 nm and 1103 nm to nearly Fourier transform limited pulses. From autocorrelation measurements, the full width at half maximum (FWHM) of the compressed two-color pulses with the peak wavelengths of 1041 nm and 1103 nm was ~500 fs. By mixing the tunable two-color pulses in a 1-mm-thick GaSe crystal using DFG technique, I achieved tunable short-pulse MIR radiation. In this research, I achieved short-pulse MIR radiation tunable in the wavelengths 16-20 μm. The MIR tuning range from the lower side was limited to the 16 μm because of the 71-nm limitation on the two-color separation and from the upper side was limited to the 20 μm because of the 20-μm cutoff absorption wavelength of GaSe. Based on measured MIR spectra, the MIR pulses have a picosecond pulse duration in the wavelengths 16-20 μm. The FWHM of measured spectra of the MIR pulses increases from 0.3 μm to 0.8 μm as the MIR wavelength increases from 16 μm to 20 μm. According to Fourier transform theory, the FWHM of the MIR spectra corresponds to the bandwidth of picosecond MIR pulses assuming that the MIR pulses are perfectly Fourier-transform-limited Gaussian pulses. In this research, I achieved a maximum average power of 1.5 mW on short-pulse MIR radiation at the wavelength 18.5 μm corresponding to the difference frequency of the 500-fs two-color pulses with the peak wavelengths of 1041 nm and 1103 nm and average powers of 1350 mW and 80 mW respectively. Considering the gain bandwidth, Ti:sapphire is a main competitor to the YDFA to be used in the two-color ultrafast laser systems. In the past, the broad gain bandwidth of Ti:sapphire crystal has resulted in synchronized two-color pulses with a wavelength separation up to 120 nm. Apart from its bulkiness and high cost, Ti:sapphire laser system is limited to a watt-level output average power at room temperature mainly due to Kerr lensing problem that occurs at high pumping powers. In comparison, YDFA as a laser amplifier has a narrower gain bandwidth but it is superior in terms of average power. Optical parametric generation (OPG) and optical parametric amplification (OPA) techniques are two competitors to DFG technique for the generation of short-pulse long-wavelength MIR radiation. Although OPG offers a tunability range as broad as DFG, the MIR output power is lower because of the absence of input signal pulses. From the OPA technique, the tunability range is not as broad as the DFG technique due to limitations with the spectral bandwidth of the optical elements. Currently, quantum cascade lasers (QCLs) are the state-of-art MIR laser sources. At the present time, the tunability range of a single MIR QCL is not as abroad as that achieved from the DFG technique. More, mode-locked MIR QCLs are not abundant mainly because of the fast gain recovery time. Thus, the generation of widely tunable short-pulse MIR radiation from DFG technique such as that developed in this thesis remains as a persistent technological solution. The application of the system developed in this thesis is twofold: on one hand, the tunable two-color ultrashort pulses will find applications for example in pump-probe ultrafast spectroscopy, short-pulse MIR generation, and optical frequency combs generation. On the other hand, the short-pulse MIR radiation will find applications for example in time-resolved MIR spectroscopy to study dynamical behavior of large molecules such as organic and biological molecules.

In wireless communication systems, multiple standards have been implemented to meet the past and present demands of different applications. This proliferation of wireless standards, operating over multiple frequency bands, has increased the demand for radio frequency (RF) components, and consequently power amplifiers (PA) to operate over multiple frequency bands. In this research work, a systematic approach for the synthesis of a novel dual-band matching network is proposed and applied for effective design of PA capable of maintaining high power efficiency at two arbitrary widely spaced frequencies. The proposed dual-band matching network incorporates two different stages. The first one aims at transforming the targeted two complex impedances, at the two operating frequencies, to a real one. The second stage is a dual-band filter that ensures the matching of the former real impedance to the termination impedance to 50 Ohm. Furthermore, an additional transmission line is incorporated between the two previously mentioned stages to adjust the impedances at the second and third harmonics without altering the impedances seen at the fundamental frequencies. Although simple, the harmonic termination control is very effective in enhancing the efficiency of RF transistors, especially when exploiting the Class J design space. The proposed dual-band matching network synthesis methodology was applied to design a dual-band power amplifier using a packaged 45 W gallium nitride (GaN) transistor. The power amplifier prototype maintained a peak power efficiency of about 68% at the two operating frequencies, namely 800 MHz and 1.9 GHz. In addition, a Volterra based digital predistortion technique has been successfully applied to linearize the PA response around the two operating frequencies. In fact, when driven with multi-carrier wideband code division multiple access (WCDMA) and long term evolution (LTE) signals, the linearized amplifier maintained an adjacent channel power ratio (ACPR) of about 50 dBc and 46 dBc, respectively.

The evolution of wireless technology has necessitated the support of multiple communication standards by mobile devices. At present, multiple chipsets/radios operating at predefined sets of modulation schemes, frequency bands, bandwidths and output power levels are used to achieve this objective. This leads to higher component counts, increased cost and limits the capacity to cope with future communication standards. In order to tackle different wireless standards using a single chipset, digital circuits have been increasingly deployed in radios and demonstrated re-configurability in different modulation schemes (multimode) and frequency bands (multiband). Despite efforts and progress made in digitizing the entire radio, the power amplifier (PA) is still designed using an conventional approach and has become the bottleneck in digital transmitters, in terms of low average power efficiency, poor compatibility with modern CMOS technology and limited re-configurability. This research addresses these issues from two aspects. The first half of the thesis investigates signal encoding issues between the modulator and PA. We propose, analyze and evaluate a new hybrid amplitude/time signal encoding scheme that significantly improves the coding efficiency and dynamic range of a digitally modulated power amplifier (DMPA) without significantly increasing design complexity. The proposed hybrid amplitude/time encoding scheme combines both the amplitude domain and the time domain to optimally encode information. Experimental results show that hybrid amplitude/time encoding results in a 35% increase in the average coding efficiency with respect to conventional time encoding, and is only 6.7% lower than peak efficiency when applied to a Wireless Local Area Network (WLAN) signal with a peak to average power ratio equal to 9.9 dB. A new DMPA architecture, based on the proposed hybrid encoding, is also proposed. The second half of this thesis presents the design, analysis and implementation of a CMOS PA that is amenable to the proposed hybrid encoding scheme. A multi-way current mode class-D PA architecture has been proposed and realized in 130 nm CMOS technology. The designed PA has satisfied the objectives of wide bandwidth (1.5 GHz - 2.7 GHz at 1 dB output power), and high efficiency (PAE 63%) in addition to demonstrating linear responses using the proposed digital encoding. A complete digital transmitter combining the encoder and the multi-way PA was also investigated. The overall efficiency is 27% modulating 7.3 dB peak to average power ratio QAM signals.

In this thesis the design of a MMIC vector modulator operating in 9GHz-10GHz band is investigated and performed. Sub-sections of the vector modulator are 4-port (4.8dB) 1200 phase shift relative to the dedicated port power splitter, digitally controlled variable gain amplifier and the in phase power combiner. Alternative methods are searched in order to implement the structure properly in the given frequency band. The final design is appropriate for MMIC structure. 4-port (4.8dB) 1200 phase shift relative to the dedicated port power splitter is studied. The performance is simulated and optimized first on Microwave Office, then on Advanced Design System (ADS) tools. Various methods to design a digitally controlled variable gain amplifier are studied. The final topology is simulated and optimized on ADS tool. An in phase power combiner is designed. The performance of the combiner is simulated and optimized on ADS tool. Lumped element models are replaced with CASWELL H-40 models to achieve a MMIC structure and a layout is drawn. The finalized vector modulator is simulated and optimized on ADS tool. Key words: MMIC, Vector Modulator, Digitally Controlled Variable Gain Amplifier, Layout