This work presents results on the study of mechanisms and performance of negative ion drift and gas gain in gas-filled radiation detectors with electronegative fill gases. Negative ions drift with slow drift velocity and the lowest possible (thermal limit) diffusion, which leads to relaxed requirements for readout electronics without sacrificing accuracy. Slow drift velocity and low diffusion are the bases for this work because these characteristics are highly desirable for space-based detectors and for low pressure Time Projection Chambers (TPCs) used to make direction sensitive searches for Galactic Dark Matter. The present work led to two major successes: (1) Nitromethane (CH3NO2) was discovered as a new electronegative fill gas for TPCs. Nitromethane anions drift even slower (mobility = 0.032 m2·T/V ·s) than the only other known capture agent, carbon disulfide (CS2, mobility = 0.036 m2·T/V ·s), and the measured longitudinal diffusion remains at the thermodynamic (lower) limit for fields up to 7 V/cmT. Nitromethane is of particular interest for X-ray photoelectric polarimeters in the 2-10 keV energy range because of its low atomic number (Z). (2) Using a Diethorn plot, the mechanism which initiates electron avalanches in electronegative gas mixtures was accounted for. The Diethorn plot parameter Emin, is the minimum field needed to start avalanche gain in a proportional counter. Electronegative gases were found to have extremely large pressure-reduced starting fields (10-50 times larger than electron gases) which are themselves approximately independent of pressure. This can only be accounted for by a collisional ionization mechanism leading to the release of electrons from the ions and subsequent development of gain through a normal Townsend avalanche. The collision cross-section (σc) calculated from drift velocity data allows an estimate of Emin to be made which agrees with the experimental findings (5 - 25 % difference). The light output from Townsend avalanches has been proposed as an alternative readout mechanism for TPCs. The light output from negative ion avalanches was investigated using a Negative Ion Drift Chamber (NIDC) with a Gaseous Electron Multiplier (GEM)-like device as the amplification structure, viewed through a quartz window by a photomultiplier tube. This study allowed an upper limit of light output to be assigned to several negative ion gas mixtures. Finally, a Micromegas NIDC was assembled to test the performance of negative ion mixtures in this gain device. The detector was stable and operated at gas gains of ∼ 104 in an electron gas mixture (argon-isobutane). However, with the two negative ion gases studied, CS2 and CH3NO2, high voltage breakdown and microphonic noise developed before appreciable gain was obtained. / Physics

Neste trabalho são apresentados os resultados obtidos no desenvolvimento de um sistema especificado para realizar testes na caracterização de dispositivos fotodetectores como fotodiodos de avalanche. O sistema de ensaios elaborado pretende auxiliar com na caracterização da fotodetecção em dispositivos de acoplamento de cargas com multiplicação de elétrons (EMCCD). O objetivo deste trabalho é avaliar o desempenho dos dispositivos fotodetectores para caracterizar os parâmetros mais significativos no processo da transdução óptica de modo a colaborar no projeto da eletrônica embarcada de controle e leitura da informação contida no EMCCD. A tecnologia da multiplicação dos elétrons em dispositivos CCD e diodos de avalanche têm aplicações importantes na vigilância de ambiente de luminosidade reduzida, astronomia, além de outras aplicações de imagens científicas incluindo as de baixo nível de bioluminescência para identificação de drogas e aplicações da engenharia genética. Para efeito de avaliação do desempenho do sistema fotodetector foi necessário desenvolver uma infra-estrutura para ter controle adequado da temperatura de operação do EMCCD. Foram nomeadas as opções com uma montagem de resfriamento com células Peltier e uma opção por criogenia resfriada com nitrogênio líquido. Os resultados obtidos são úteis na detecção de sinais luminosos ultrafracos minimizando o ruído do detector na aquisição de imagens com o auxilio da instrumentação de um filtro óptico sintonizável que será integrado no telescópio SOAR de 4 metros, instalado no Chile, para observações melhoradas com óptica adaptativa. / This work presents the results obtained in the development of a system specified to perform tests in the characterization of photo-detectors devices such as avalanche photodiodes. The test system is prepared to contribute to the characterization of the photo-detection in charge-coupled devices with electron multiplication (EMCCD). The objective of this study is to evaluate the performance of photo-detectors devices to characterize the most significant parameters in the optic transduction in order to collaborate in the project of an embedded electronic system for controlling and reading the information contained with the EMCCD. The technology of the electron multiplication in CCD devices and avalanche diodes has important applications in monitoring the environment of low light, astronomy and other scientific imaging applications including the low level of bioluminescence for the identification of drugs and applications of genetic engineering. For purposes of assessing the performance of the photo-detector it was necessary to develop an infrastructure to have proper control of the operating temperature of the EMCCD. Options were named with a montage of Peltier cell cooling and a choice of cryogenically cooled with liquid nitrogen. The results are useful in the detection of ultra weak light signals while minimizing detector noise during the acquisition of images from instrument comprising an optical tunable filter, that will be integrated into SOAR 4 meters telescope, installed in Chile, for observations improved with adaptive optics.

Neste trabalho são apresentados os resultados obtidos no desenvolvimento de um sistema especificado para realizar testes na caracterização de dispositivos fotodetectores como fotodiodos de avalanche. O sistema de ensaios elaborado pretende auxiliar com na caracterização da fotodetecção em dispositivos de acoplamento de cargas com multiplicação de elétrons (EMCCD). O objetivo deste trabalho é avaliar o desempenho dos dispositivos fotodetectores para caracterizar os parâmetros mais significativos no processo da transdução óptica de modo a colaborar no projeto da eletrônica embarcada de controle e leitura da informação contida no EMCCD. A tecnologia da multiplicação dos elétrons em dispositivos CCD e diodos de avalanche têm aplicações importantes na vigilância de ambiente de luminosidade reduzida, astronomia, além de outras aplicações de imagens científicas incluindo as de baixo nível de bioluminescência para identificação de drogas e aplicações da engenharia genética. Para efeito de avaliação do desempenho do sistema fotodetector foi necessário desenvolver uma infra-estrutura para ter controle adequado da temperatura de operação do EMCCD. Foram nomeadas as opções com uma montagem de resfriamento com células Peltier e uma opção por criogenia resfriada com nitrogênio líquido. Os resultados obtidos são úteis na detecção de sinais luminosos ultrafracos minimizando o ruído do detector na aquisição de imagens com o auxilio da instrumentação de um filtro óptico sintonizável que será integrado no telescópio SOAR de 4 metros, instalado no Chile, para observações melhoradas com óptica adaptativa. / This work presents the results obtained in the development of a system specified to perform tests in the characterization of photo-detectors devices such as avalanche photodiodes. The test system is prepared to contribute to the characterization of the photo-detection in charge-coupled devices with electron multiplication (EMCCD). The objective of this study is to evaluate the performance of photo-detectors devices to characterize the most significant parameters in the optic transduction in order to collaborate in the project of an embedded electronic system for controlling and reading the information contained with the EMCCD. The technology of the electron multiplication in CCD devices and avalanche diodes has important applications in monitoring the environment of low light, astronomy and other scientific imaging applications including the low level of bioluminescence for the identification of drugs and applications of genetic engineering. For purposes of assessing the performance of the photo-detector it was necessary to develop an infrastructure to have proper control of the operating temperature of the EMCCD. Options were named with a montage of Peltier cell cooling and a choice of cryogenically cooled with liquid nitrogen. The results are useful in the detection of ultra weak light signals while minimizing detector noise during the acquisition of images from instrument comprising an optical tunable filter, that will be integrated into SOAR 4 meters telescope, installed in Chile, for observations improved with adaptive optics.

Beaucoup de systèmes qui ont un certain degré de désordre ont des similaritésdans leur structure: le paysage énergétique est aléatoire et il a plusieursminima locaux de l’énergie. Quand on ajoute une petite perturbation externeau système à basse temprature, il est raisonnable d’attendre que la dynamiqueconduira le système d’un minimum à l’autre, et ça donne lieu à une réponsealéatoire et saccadé. Les sautes discontinus que l’on observe sont appelésavalanches, et l’intérêt de ce travail est le calcul de leur distribution. Undes résultats est en effet le développement d’un cadre pour calculer cettedistribution dans des systèmes en dimension infinie qui peuvent être décritsavec le replica symmetry breaking. Nous appliquons les résultats à l’un desmodèles les plus simples des verres structuraux, c’est à dire les empilementsdenses de sphères molles avec répulsion harmonique, avec une déformation(shear strain) du volume comme perturbation. Nous soutenons que, quandla déformation est suffisamment petite, une portion de la distribution desavalanches devient une loi de puissance, dont l’exposant peut être directementlié au paramètre d’ordre de la brisure de symétrie de replica. Cet exposant estégalement lié à la distribution des forces de contact (au moins entre certainessphères), dont le comportement asymptotique on sais que ne dpends pasfortement de la dimension spatiale; pour cette raison nous comparons lesprdictions de champ moyen en dimension infinie avec des simulation du mêmesystème en dimension trois et, remarquablement, on trouve un bon accord.Dans le reste de la thèse nous discutons aussi les similarités avec des travauxprécédents et quelques consquences que la distribution des avalanches donnesur les propriétés élastiques de la matière granulaire dense. / Many systems that are somehow characterized by a degree of disorder sharea similar structure: the energy landscape has many sample-dependent localenergy minima. When a small external perturbation is applied to the systemat low temperature, it is reasonable to expect that the dynamics will leadthe system from a minimum to another, thus displaying a random and jerkyresponse. The discontinuous jumps that one observes are called avalanches,and the focus of this work is the computation of their distribution. Oneof the results is indeed the development of a framework that allows thecomputation of this distribution in infinite-dimensional systems that canbe described within a replica symmetry breaking ansatz. We apply theresults to one of the simplest models of structural glasses, namely densepackings of (harmonic) soft spheres, either at jamming or at larger densities,subject to a shear transformation that induces jumps both in the totalenergy and in the shear stress of the system. We argue that, when theshear strain is small enough, the avalanche distribution develops a power-lawbehavior, whose exponent can be directly related to the functional orderparameter of the replica symmetry breaking solution. This exponent is alsorelated to the distribution of contact forces (or at least of the contact forcesbetween some of the spheres), whose asymptotic behavior is known not todepend strongly on the spatial dimension; for this reason, we compare theinfinite-dimensional prediction with three dimensional simulations of thesame systems and, remarkably, we find a good agreement. In the rest of thethesis we compare our results with previous works, and we also discuss someof the consequences that the avalanche distribution lead to, concerning thestatistical elastic properties of dense granular media.

This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device characterization for Geiger-mode gallium nitride (GaN) deep-UV (DUV) p-i-n avalanche photodiodes (APDs), indium gallium nitride (InGaN)/GaN-based violet/blue laser diodes (LDs), and GaN/InGaN-based npn radio-frequency (RF) double-heterojunction bipolar transistors (DHBTs). All the epitaxial materials of these devices were grown in the Advanced Materials and Devices Group (AMDG) led by Prof. Russell D. Dupuis at the Georgia Institute of Technology using the metalorganic chemical vapor deposition (MOCVD) technique. Geiger-mode GaN p-i-n APDs have important applications in DUV and UV single-photon detections. In the fabrication of GaN p-i-n APDs, the major technical challenge is the sidewall leakage current. To address this issue, two surface leakage reduction schemes have been developed: a wet-etching surface treatment technique to recover the dry-etching-induced surface damage, and a ledged structure to form a surface depletion layer to partially passivate the sidewall. The first Geiger-mode DUV GaN p-i-n APD on a free-standing (FS) c-plane GaN substrate has been demonstrated. InGaN/GaN-based violet/blue/green LDs are the coherent light sources for high-density optical storage systems and the next-generation full-color LD display systems. The design of InGaN/GaN LDs has several challenges, such as the quantum-confined stark effect (QCSE), the efficiency droop issue, and the optical confinement design optimization. In this dissertation, a step-graded electron-blocking layer (EBL) is studied to address the efficiency droop issue. Enhanced internal quantum efficiency (ɳi) has been observed on 420-nm InGaN/GaN-based LDs. Moreover, an InGaN waveguide design is implemented, and the continuous-wave (CW)-mode operation on 460-nm InGaN/GaN-based LDs is achieved at room temperature (RT). III-N HBTs are promising devices for the next-generation RF and power electronics because of their advantages of high breakdown voltages, high power handling capability, and high-temperature and harsh-environment operation stability. One of the major technical challenges to fabricate high-performance RF III-N HBTs is to suppress the base surface recombination current on the extrinsic base region. The wet-etching surface treatment has also been employed to lower the surface recombination current. As a result, a record small-signal current gain (hfe) > 100 is achieved on GaN/InGaN-based npn DHBTs on sapphire substrates. A cut-off frequency (fT) > 5.3 GHz and a maximum oscillation frequency (fmax) > 1.3 GHz are also demonstrated for the first time. Furthermore, A FS c-plane GaN substrate with low epitaxial defect density and good thermal dissipation ability is used for reduced base bulk recombination current. The hfe > 115, collector current density (JC) > 141 kA/cm², and power density > 3.05 MW/cm² are achieved at RT, which are all the highest values reported ever on III-N HBTs.

La photod??tection est un sujet de recherche tr??s actif encore de nos jours et l???industrie, particuli??rement de la physique des hautes ??nergies et de l???imagerie m??dicale, est en qu??te de d??tecteurs avec une plus grande sensibilit??, de meilleures r??solutions temporelles et une plus grande densit?? d???int??gration. Pour ces raisons, les photodiodes avalanche ?? photon unique (Single photon avalanche diode, ou SPAD) suscitent beaucoup d???int??r??t depuis quelques ann??es pour ses performances en temps et sa grande photosensibilit??. Les SPAD sont des photodiodes avalanche op??r??es au-dessus de la tension de claquage et un photoporteur atteignant la r??gion de multiplication peut ?? lui seul d??clencher une avalanche soutenue de porteurs et entra??ner le claquage de la jonction. Un circuit d??tecte le courant divergent et l?????touffe en abaissant la polarisation de la jonction sous la tension de claquage. Le circuit recharge ensuite la jonction en r??appliquant la tension initiale permettant la d??tection d???un nouveau photon. Dans le but d???augmenter le nombre de photons simultan??s d??tectables, les SPAD s???int??grent en matrice. Cependant, dans le cas o?? une matrice de SPAD et leurs circuits d?????touffement s???int??grent sur le m??me substrat, la surface photosensible devient limit??e par l???espace qu???occupent les circuits d?????touffement. Dans le but d???augmenter leur r??gion photosensible, les matrices de SPAD peuvent s???int??grer en trois dimensions (3D) avec leurs circuits d?????touffement. Ce projet porte sur le d??veloppement de matrices de SPAD en technologie CMOS HV 0,8 ??m de Teledyne DALSA d??di??es ?? une int??gration 3D avec leurs circuits d?????touffement actifs. Les r??sultats de caract??risation montrent que les SPAD atteignent une r??solution temporelle de 27 ps largeur ?? mi hauteur (LMH), poss??dent un taux de comptage en obscurit?? (DCR, ou Dark Count Rate) de 3 s[indice sup??rieur -1]??m[indice sup??rieur -2] et ont une probabilit?? de photod??tection (PDP) de 49 %. De plus, une m??thode d???isolation utilisant un puits p a ??t?? d??velopp??e. Les SPAD con??us avec cette m??thode ont un facteur de remplissage pouvant atteindre 54 % et une probabilit?? de diaphonie de 6,6 % ?? une tension exc??dentaire ?? la tension de claquage (V[indice inf??rieur E]) de 4 V.

Abstract Although avalanche switching has been known since the 1950s, a trustworthy one-dimensional physical interpretation of the practically interesting high-current mode ("secondary breakdown") in a Si avalanche transistor has appeared only within the last decade and thanks to numerical one-dimensional and two-dimensional physics-based device modelling. A good fit with experimental waveforms has been achieved only for high-current, long-duration pulses (~100 A/7 ns), however, and modelling fails in the case of shorter pulses in a range that is of greater practical importance. One significant finding in this thesis is that reliable modelling of a Si avalanche transistor is in general impossible without taking account of three-dimensional effects. The task is a challenging one, as it is being put forward for the first time and state-of-the-art simulators are unable to model three-dimensional avalanche dynamics with an external circuit included (i.e. in “MixedMode”). Thus a smart approach was adopted which allowed the main features of the three-dimensional transient to be explained using a two-dimensional simulator and compared with the experimental data. The focus was on a trade-off of between high switching efficiency in an avalanche transistor (high-speed switching with a lower residual voltage as occurs at extremely high current densities) and device reliability as determined by local overheating during a single pulse, similarly resulting from high current density. This denotes the practical importance of the work performed here, as the current density is directly affected by three-dimensional dynamic processes. The second task performed in this thesis concerns the reliability of the GaAs avalanche transistors developed recently in the Electronics Laboratory and demonstrated of unique (superfast) switching and high-power-density sub-THz emission for mm-wave imaging and radars. Critically important for this new device is the limitation originating from premature breakdown at the surface of the GaAs p-n junction with a high density of surface states. Two of the results of this work are also fairly challenging: (i) the mechanism of "soft" surface breakdown intrinsic to all GaAs transistor mesas was interpreted in terms of the surface trapping of avalanche-generated electrons as suggested here, and (ii) passivation of the surface with a chalcogenide glass was suggested, as this allows the premature surface breakdown to be suppressed completely, an effect that has proved to be caused by a large negative surface charge formed on the “U centres” intrinsic to a chalcogenide glass. / Tiivistelmä Vaikka avalanche läpilyönti pii-transistoreissa on tunnettu jo 1950-luvulta lähtien, luotettava 1-dimensionaalinen fysikaalinen tulkinta ilmiöstä käytännön sovellusten kannalta kiinnostavilla suurilla virtatasoilla (ns. “secondary breakdown”) on esitetty vasta viime vuosikymmenen aikana 1- ja 2-dimensionaalisiin numeerisiin simulointeihin ja fysikaaliseen mallinnukseen perustuen. Kokeellisten mittausten ja simulointien välille on saatu hyvä sovitus kuitenkin vain sellaisessa ohjaustilanteessa, jossa transistori toimii suurella virtatasolla ja tuottaa leveitä virtapulsseja (~100  A / 7 ns); mallinnus ei vastaa mittaustuloksia lyhyillä virtapulsseilla, jotka kuitenkin ovat tärkeitä käytännön sovellusten kannalta. Yksi tämän työn keskeisiä havaintoja on se, että piipohjaisen avalanche transistorin luotettava mallintaminen ei ole käytännössä yleisesti mahdollista ottamatta huomioon 3-dimensionaalisia (3D) efektejä. Tällainen mallinnus, jota tässä työssä on kehitetty ensimmäistä kertaa, on vaikeaa, koska kaupalliset simulointiohjelmistot eivät kykene käsittelemään avalanche ilmiön dynamiikka 3-dimensionaalisesti tilanteessa, jossa transistoriin on kytketty ulkoinen piiri (ns. mixed-mode -simulointitilanne). Tähän kehitettiin tekniikka, joka mahdollistaa 3-dimensionaalisen kytkentätransientin tärkeimpien piirteiden selittämisen ja mittaustuloksiin vertaamisen 2-dimensionaalisten simulointien perusteella. Erityisesti pyrittiin selvittämään avalanche transistorin korkean kytkentähyötysuhteen (kollektori-emitterin ns. residual-jännitteen käyttäytyminen virrantiheystason mukaan) ja komponentin luotettavuuden välistä riippuvuutta. Luotettavuuteen vaikuttaa olennaisesti komponentin sisäinen, lokalisoitunut lämpötilamaksimi, joka myös riippuu keskeisesti komponentin virrantiheystasosta kytkentäpulssin aikana. Toisaalta virrantiheyteen vaikuttavat juuri komponentin 3-dimensionaaliset dynaamiset prosessit, joten työn käytännöllinen merkitys on suuri. Työn toisen osa käsittelee elektroniikan laboratoriossa äskettäin kehitetyn GaAs-avalanche transistorin luotettavuutta. Tällaisella transistorilla on demonstroitu olevan erityislaatuinen supernopea kytkeytymisefekti, ja se emittoi korkealla tehotasolla sähkömagneettista säteilyä n. 0,1–1 THz taajuusalueella. GaAs-avalanche transistoria voidaan täten potentiaalisesti hyödyntää mm-alueen kuvantamisessa ja tutkissa. Tämän uuden transistorin luotettavuuteen vaikuttaa ratkaisevasti rajoitus, joka aiheutuu ennenaikaisen, GaAs-pn-liitoksen pinnassa vaikuttavasta suuresta pintatilatiheydestä johtuvan läpilyönnin mahdollisuudesta. Työn kaksi keskeistä tulosta ovat: (i) kaikilla GaAs-transistoreilla ilmenevä ns. ”pehmeä”-läpilyönti aiheutuu avalanche ilmiön synnyttämien elektronien loukkuuntumisesta pinta-tiloihin, ja (ii) pinnan passivointi kalkopyriittilasilla estää läpilyönnin kokonaan, koska kalkopyriittilasille luonteenomaiset ”U-tilat” aiheuttavat liitoksen pintaan korkean negatiivisen pintavarauksen.

Barrières de transport (TB) sont un élément clé dans le contrôle de transport turbulent et atteindre la haute performance des ‘plasmas brûlants’. Les études théoriques abordent l’autorégulation de la turbulence comme une explication possible pour la formation de TB, mais une compréhension complète de ces dynamiques complexes est toujours manquante. Dans ce contexte, nous abordons l’auto-organisation dans le transport turbulent dans les plasmas de fusion dans le but de présenter une nouvelle compréhension de la dynamique des TB. Les outils numériques que nous utilisons des simulations de portée de la turbulence gyrocinétique plus complexe à simple turbulence des fluides 2D et prédateur-proie comme modèles.Deux principales caractéristiques de l'auto-organisation, les avalanches et les flux zonal (ZF), semblent contrôler transport à grande échelle. Dans la région de SOL (Scrape Off layer), événements avalancheux intermittents ne permettent pas séparation d'échelle dans le temps ou l'espace entre champs moyens et les modalités de fluctuation. Dans le bord (edge), la génération des doubles couches de cisaillement dans les profils de vitesse réduit le transport turbulent. Un modèle turbulent 2D pour la génération de ‘piedestal’, qui est non spécifique des plasmas de tokamak, a été mis au point, le piedestal étant localisée à l'interface entre les régions a différent amortissement d'écoulement zonal: edge et SOL. Les événements de relaxation quasi-périodiques sont étudiés réduisent le modèle à trois couplage des modes pour identifier l'interaction entre les streamers et les ZF et le rôle du Reynolds stress dans la génération et la saturation du TBs / Transport barriers (TB) are a key element in controlling turbulent transport and achieving high performance burning plasmas. Theoretical studies are addressing the turbulence self-regulation as a possible explanation for transport barrier formation but a complete understanding of such complex dynamics is still missing. In this context, we address self-organized turbulent transport in fusion plasmas with the aim of presenting a novel understanding of transport barriers dynamics. The numerical tools we use span simulations from the most complex gyrokinetic turbulence to simpler 2D fluid turbulence and predator-prey like models.Two features of self-organizations, avalanches and zonal flows (ZFs), appear to control large scale transport. In the SOL (Scrape Off Layer) , intermittent avalanche events do not allow for time or space scale separation between mean fields and fluctuation terms. In the edge, the generation of long living double shear layers in the profiles of the velocity reduces radial turbulent transport. Such radially distributed barriers govern profile corrugations. A 2D turbulent model for pedestal generation, which is not specific of Tokamak plasmas, has been developed, the pedestal being localized at the interface between regions with different zonal flow damping: the edge region, where zonal flows are weakly damped by collisions, and the SOL region characterized by zonal flow damping due to boundary conditions. Quasi-periodic relaxation events are studied reducing the model to three modes coupling to identify the interplay between streamers and ZFs and the role of Reynolds stress in the generation and saturation of TBs.

Le développement d'un produit portable et performant, tout en limitant les coûts, répond à la croissance du marché de la détection biologique par la méthode de la biochimiluminescence. Cet outil de diagnostic d'hygiène et de qualité en temps réel in situ permet une meilleure sécurité, gestion des risques, traçabilité et surveillance des risques. Cet outil trouvera son application dans les domaines agroalimentaires, médicaux, pharmaceutiques, cosmétologiques, environnementaux (eau, air, surfaces), le tertiaire ou les collectivités. Les intérêts sont industriels, écologiques et économiques, et reflètent le désir de proposer un produit novateur et compétitif sur un marché en plein essor. En effet, la détection de certains contaminants est devenue une priorité dans la gestion des risques microbiologiques. La plupart des méthodes de diagnostic actuelles sont lentes, coûteuses, complexes, et limitées dans leur mise en uvre et leurs résultats. Le diagnostic étant essentiel dans tous les secteurs d'activité, il est impératif d'apporter des solutions alternati ves de détection et de quantification des germes pathogènes ou autre toxiques, par la conception de nouveaux outils d'analyse sur le terrain, en temps réel, avec une rapidité et une sensibilité élevées. Ceci passe par une étude fine des phénomènes de biochimiluminescence (BCL) et par la recherche des différents composants optoélectronique capables de détecter les faibles puissances lumineuses émises. Le projet de conception d'un luminomètre de terrain à base de photodiodes PIN ou avalanche, ou de photomultiplicateurs répond aux besoins de la détection et de la mesure de la puissance lumineuse rayonnée par des réactions spécifique ou non de biochimiluminescence. L'élaboration d'un appareil de mesure portable destiné à la quantification in situ de biomasse ou molécules à l'état de traces est nécessaire à l'exploitation des réactifs. En effet, les appareils existants fournissent une information en RLU (Relative Light Unit, unité arbitraire qui né cessite une comparaison à un étalon connu) et ne donnent pas une information quantifiée directe sur la concentration de l'élément recherché dans l'échantillon testé. Ils ne permettent donc pas d'optimiser la biochimiluminescence sur le terrain. L'objectif de ce travail est de mettre au point une alternative plus performante que les systèmes de détection actuels et qui soit moins onéreuse. / The development of a portable and efficient device, while reducing costs, meets the growing market for biological detection by the method of biochimiluminescence. This diagnostic tool of hygiene and quality in real time in situ allows for better security, risk management, traceability and risk monitoring.This tool will find application in the areas food, medical, pharmaceutical, cosmetic, environmental (water, air and surfaces), the tertiary or communities. Interests are industrial, environmental and economic, and reflect the desire to offer an innovative and competitive device in a booming market.Indeed, the detection of contaminants has become a priority in the management of microbiological hazards. Most current diagnostic methods are slow, costly, complex and limited in their implementation and their results.The diagnosis is essential in all industries, it is imperative to provide alternative solutions for the detection and quantification of pathogens or other toxic by the conception of new analytical tools in situ in real time with speed and high sensitivity. This requires a detailed study of biochimiluminescence (BCL) phenomena and the search for various optoelectronic components capable of detecting low power emitted light.The projet for the conception of a field-luminometer based on avalanche photodiodes, or PIN, or photomultiplier responds to the needs of detecting and measuring the light power radiated by reactions biochimiluminescence specific or not. The development of a portable measuring device for in situ quantification of biomass or molecules trace is necessary for the operation of the reactants.Indeed, existing devices provide information in RLU (Relative Light Units, arbitrary units implying a comparison to a known standard) and do not give a direct quantified information on the concentration of the desired item in the test sample. So, they do not optimize biochimiluminescence field. The objective of this work is to develop an alternative more efficient than current detection systems and is less expensive.

Avalanche forecasting is an iterative process, where forecasters use weather data and snow observations in addition to previous assessments to conclude what forecast to publish. This project investigates how the forecasting process could be automated, using three seasons worth of data from 23 of Norway’s avalanche forecasting regions. Three scenarios were considered, using different amounts of input parameters based on what data would be available to the model in each respective scenario. For each scenario a machine learning model was trained, and a separate naïve model was constructed. The machine learning model could only beat the naïve model in the simplest scenario, using only weather data. In the other scenarios it was found that the data representation was lacking; highly intermittent snow observation data was structured as timeseries when a more preprocessed representation may have been more fruitful / Snow Models and Automatization in Geohazard-Forecasting