A qualidade da energia elétrica tem sido objeto constante de estudos, pois problemas inerentes a ela podem trazer grandes prejuízos econômicos, principalmente em processos industriais. Dentre os vários fatores que afetam a qualidade da energia elétrica, destacamos aqueles relacionados com os transitórios, originados pelo chaveamento de banco de capacitares nas redes elétricas de distribuição primária. Neste trabalho, além das características dos transitórios provenientes da energização de bancos de capacitares da concessionária, são analisados fatores que influenciam em suas intensidades. As condições sob as quais estes transitórios são atenuados foram investigadas. Além disto, é feita uma análise espectral das ondas de corrente e tensão, permitindo que sejam revelados os componentes harmônicos que podem afetar o funcionamento de equipamentos de controle, proteção e cargas sensíveis da indústria. Um circuito que representa um sistema real de distribuição, 13,8 kV, da concessionária CPFL (Cia Paulista de Força e Luz) foi simulado através do ATP (Alternative Transients Program). / The quality of electric power has been a constant topic of study, because inherent problems to it can bring great economic losses, mainly in industrial processes. Among the several factors that atfect power quality, those related to the transients originated by capacitar bank switching in the primary distribution systems must be highlighted. In this work, the characteristics of the transients resulting from the switching of the utility capacitor banks are analyzed, as well as factors that influence their intensities. The conditions under which these effects are mitigated was investigated. In addition, a spectral analysis of the current and voltage waves is made. This procedure can reveal the harmonic components that can affect the operation of control and protection equipment, as well as sensitive Ioads of the industry. A circuit that represents a real distribution system, 13.8 kV, from CPFL (Cia Paulista de Força e Luz) utility, was simulated through the software ATP (Alternative Transients Program).

Neste trabalho foram fabricados e caracterizados eletricamente capacitores MOS com óxido de silício ultrafino (2,6 nm) com porta de silício policristalino (Si-poli) P+ e N+. Os capacitores MOS com porta de Si-poli dopados com boro tiveram a estrutura Si-poli/SiO2/Si previamente implantada com nitrogênio nas doses de 1.10\'POT.13\', 1.10\'POT.14\', 1.10\'POT.15\' e 5.10\'POT.15\' at.cm-², com o pico da concentração de nitrogênio próximo à interface SiO2/Si. Os capacitores MOS foram fabricados sobre lâminas de silício do tipo p que passaram por uma limpeza química préoxidação tipo RCA mais imersão final em solução diluída em HF. Na seqüência, as lâminas foram oxidadas em um ambiente de O2 (1,5 l/min) + N2/H2 (2l/min; 10 %) que proporcionou óxidos de silício com excelentes características elétricas. Para a fabricação dos capacitores MOS com porta de Si-poli P+, utilizou-se SOG de boro seguido por difusão térmica sobre camada de Si-poli (340 nm). Após testes com receitas de difusão a 950, 1000, 1050 e 1100 °C todas padronizadas por um tempo de 30 min optamos por realizar a difusão a 1050 °C por 30 min, pois essa receita proporcionou concentração de boro superior a 1.10\'POT.20\' at.cm-³ e segregação desprezível do boro em direção ao substrato de Si. A dopagem dos capacitores MOS com porta de Si-poli N+ foi realizada por aplicação do SOG de fósforo seguido por difusão a 1050 °C por 30 min. Os resultados indicaram segregação do boro desprezível para o Si, baixa densidade de estados de interface (< 1.10\'POT.11\' eV-¹ cm-²) e no aumento do campo elétrico de ruptura (de 14 MV/cm para 21 MV/cm) com o aumento da dose de nitrogênio (de 1.10\'POT.13\' a 5.10\'POT.15\' at/cm²). Embora ocorresse uma maior dispersão e um aumento desfavorável da tensão de banda plana com o aumento da dose de nitrogênio, os valores 1.10\'POT.15\' e 5.10\'POT.15\' at.cm-² resultaram em capacitores MOS com tensão de faixa plana próxima ao parâmetro diferença de função trabalho (\'fi\' MS) significando densidade efetiva de cargas no dielétrico de porta inferior à cerca de 1.10\'POT.11\' cm-². / In this work we manufactured and electrically characterized MOS capacitors with ultrathin silicon oxides (2,6 nm) and polysilicon gate (Si-poli), P+ or N+. P+ - doped polysilicon gate MOS capacitors (Si-poli/SiO2/Si structure) were previously implanted with nitrogen using doses of 1.10\'POT.13\', 1.10\'POT.14\', 1.10\'POT.15\' and 5.10\'POT.15\' at.cm-², and implantation peak centered close to the SiO2/Si interface before boron doping. The MOS capacitors were fabricated on p-type silicon wafers, which were submitted to RCA - based cleaning procedure and a final dip in diluted HF solution. Following, the wafers were oxidize in ultrapure O2 (1,5 l/min) + N2/H2 (2l/min; 10 %) having, as a result, silicon gate oxides with excellent electrical characteristics. To obtain P+ polysilicon, it Spin On Glass (SOG) of boron the wafers was annealed at 950, 1000, 1050 or 1100 °C during 30 min. We have chosen a diffusion recipe of 1050 °C during 30 min to obtain volumetric concentration of boron higher than 1.10\'POT.20\' cm-³ and no boron segregation to the silicon. N+ polysilicon was also obtained using phosphorus SOG and diffusion at 1050 °C during 30 min. As a result, besides no boron segregation to Si, the interface states density was low (< 1.10\'POT.11\' eV-¹cm-²) and the breakdown field of the gate oxides increased (from 14 MV/cm to 21 MV/cm) by increasing the nitrogen doses (from 1.10\'POT.13\' to 5.10\'POT.15\' at/cm²). Although a larger dispersion and increasing of the flat-band voltage have occurred as the nitrogen dose was increased, values of 1.10\'POT.15\' and 5.10\'POT.15\' at.cm-² induced flat band voltage close to the parameter workfunction difference (\'fi\'MS) which meant effective charge density in the gate dielectrics lower than about 1.10\'POT.11\' cm-².

Switched-capacitor (SC) DC-DC converters provide a viable solution for on-chip DC-DC conversion as all the components required are available in most processes. However, power efficiency, power density characteristics of SC converters are adversely affected by the integration, and characteristics such as response time and noise can be further improved with an on-chip converter. An analysis on speed, power efficiency, and noise performance of SC converters is presented and verified using simulations. Based on the analysis two techniques, converter-gating and adaptive gain control, are developed. Converter-gating uses a combination of smaller stages and reconfiguration during transient load steps to improve the power efficiency and transient response speed. The stages of the converter are also distributed across the die to reduce the voltage drop and noise on power supply. Adaptive gain control improves transient response through manipulation of the gain of the integrator in the control loop. This technique focuses on improving the response time during converter reconfiguration and offers a general solution to transient response improvement instead of focusing on the worst case scenario which is usually the largest transient load step. The techniques developed are then implemented in ST 28nm FDSOI process and test methodologies are discussed.

This master's thesis considers by single-phase asynchronous motor. The first part discuss about construction, principle of operation and basic parameters of this motor type. It also discussed the emergence of torque and torque characteristics of the different types of engines. The second part explains the basic ways of obtaining grip moment including outline the principles of functions particulars constructions types, which is produce in practice. In the third part is minutely analyse single-phase asynchronous motor with auxiliary phase and permanently conect capacitor, including method of assign size of a capacitor. Fourth part section provides the principles of the procedure for calculating basic parameters of the single asynchronous motor with auxiliary phase. At the last part is accomplished a calculation of single-phase asynchronous motor with permanently conect capacitor at auxiliary phase including comparation with already manufacturing motor.

This project deals with the computer analysis of circuits with external switching. At the first of all there is a description of the creation of the entry of the program CIRNAM – description of the circuit, modified netlist. The work also discusses the theory used for solutions of analysed circuits. In the other part there is a description of the program CIRNAM in full details. In the next parts of this project there is the illustration of work in the program, which is shown on the examples with short discussion of output options – he rendering of the frequency characteristics in the program CIRNAM or the export of calculated data to MATLAB. There are also described the source code of CIRNAM for the initial orientation of the programmer, which would extend the possibilities of this program.

The present paper deals with the problematics of the design and technology of planar microelectronic structures for the hign frequency band. These structures were realised on the Department of Microelectronics and their properties were measured on the Department of Radioelectronics. The part of this work is also simulation of some microelectronic structures, where for these simulations the design and simulation tool Ansoft Designer and the FEM tool ANSYS was used. The attention is paid to the discrete devices (coils and capacitors) as well as to the more complex structures (frequency filters). The paper yields the new findings in the field of the design and technology of the discrete components as well as of the more complex systems, these findings can be used as the basis for another research of practical applications.

Le convertisseur multiniveau modulaire (MMC) est une solution appropriée pour les réseaux HVDC grâce à sa modularité, sa faible fréquence de commutation et sa tension alternative quasi-sinusoïdale. En raison de sa topologie, son modèle mathématique est assez complexe et est donc souvent simplifié au stade de la conception. En particulier, la résistance équivalente au bras R, l'inductance du bras L et le courant circulant sont souvent négligés. Toutefois, les résultats expérimentaux obtenus avec notre prototype monophasé de MMC à pont complet à six niveaux ont montré que ces hypothèses ne sont pas toujours acceptables. Dans ce contexte, l'objectif de cette thèse est d'étudier l'impact de R, L et du courant de circulation sur la tension du condensateur du module et sur la zone de fonctionnement du MMC. Premièrement, nous avons étendu le modèle basé sur les intégrales communément utilisé et nous avons clarifié les hypothèses sur lesquelles il repose. Entre autres, des expressions pour les courants de circulation et courant DC ont été développées et comparées à celles que l’on trouve dans la littérature. Cela nous a permis d'analyser l'ondulation de la tension du condensateur du module en fonction de R et L, sans courant de circulation. Deuxièmement, pour surmonter les limites du modèle basé sur l'intégrale, nous avons proposé d'utiliser un modèle MMC invariant dans le temps en régime permanent dans le système dq0. Quelques hypothèses seulement sont nécessaires pour obtenir ce modèle, mais une évaluation numérique est requise. Cela nous a permis d'analyser la tension moyenne du condensateur du module et l'ondulation de tension du condensateur du module en fonction de R et L, avec et sans courant de circulation. Troisièmement, en utilisant le modèle invariant dans le temps en régime permanent, nous avons développé un diagramme PQ détaillé du MMC. Outre la limite de courant AC, la limite de courant DC et la limite d'indice de modulation classiques, nous avons ajouté plusieurs limites internes: courant de l'IGBT, courant efficace des bras et ondulation du courant et de la tension du condensateur du module. Les résultats ont été confirmés par simulation numérique à l'aide d'un modèle détaillé Matlab Simulink SimPowerSystems. Les résultats présentés dans cette thèse pourraient être utilisés pour optimiser le dimensionnement des composants de la MMC en fonction de sa zone d’exploitation et pour évaluer l’impact de différents paramètres sur les performances du MMC. / The modular multilevel converter is a suitable solution for HVDC grids thanks to its modularity, low switching frequency and quasi-sinusoidal AC voltage. However, due to its topology, its mathematical model is quite complex and is therefore often simplified at the design stage. In particular, the arm equivalent resistance R, the arm inductance L and the circulating current are often neglected. But experimental results obtained with our 1-ph 6-level full-bridge MMC prototype showed that these hypotheses are not always acceptable. In this context, the goal of this thesis is to study the impact of accounting for R, L and the circulating current on the module capacitor voltage and on the operating area of the converter. First, we extended the commonly used integral based model and we clarified the hypotheses behind it. Among others, expressions for the circulating and dc currents have been developed and compared with the one that can be found in the literature. It allowed us to analyze the module capacitor voltage ripple as a function of R and L, without circulating current only. Second, to overcome the limitations of the integral based model, we proposed to use a steady state time invariant (DeltaSiga) MMC model in dq0 frame. Only few hypotheses are required to obtain this model, but a numerical evaluation is required. It allowed us to analyze the module capacitor average voltage and the module capacitor voltage ripple as a function of R and L, with and without circulating current. Third, using the steady state time invariant model, we developed a detailed PQ diagram of the MMC. In addition to the conventional AC current limit, DC current limit and modulation index limit, we added several internal limits: IGBT current, arm rms current and module capacitor voltage and current ripple. The results have been confirmed by numerical simulation using a detailed Matlab Simulink SimPowerSystems model. The results presented in this thesis could be used to optimize the sizing of the components of the MMC considering its operating area, and to assess the impact of different parameters on the MMC performance.

This thesis presents the theory, analysis, testing and implementation of a scheme to reduce shunt compensation capacitor switching transients. The described method is switch the capacitors very near the instant when the bus voltage is at a power frequency zero. This was accomplished with a vacuum breaker on a 230 kV shunt capacitor bank.

L'impression par transfert, une technique utilisée pour transférer divers matériaux tels que des molécules d'ADN, de la résine photosensible ou des nanofils semi-conducteurs, s'est dernièrement révélée utile pour la réalisation de structures de silicium statiques sous le nom de micro-maçonnerie. L'étude présentée ici explore le potentiel de la technique de micro-maçonnerie pour la fabrication de résonateurs MEMS. Dans ce but, des microplaques de silicium ont été transférées sur des couches d'oxyde avec cavités intégrées à l'aide de timbres de polymère afin de créer des structures de type plaques suspendues. Le comportement dynamique de ces structures passives a été étudié sous pression atmosphérique et sous vide en utilisant une excitation externe par pastille piézo-électrique mais aussi le bruit thermomécanique. Par la suite, des résonateurs MEMS actifs, à actionnement électrostatique et détection capacitive intégrés, ont été fabriqués en utilisant des étapes supplémentaires de fabrication après impression. Ces dispositifs ont été caractérisés sous pression atmosphérique. Les facteurs de qualité intrinsèques des dispositifs fabriqués ont été évalués à 3000, ce qui est suffisant pour les applications de mesure à pression atmosphérique et en milieu liquide. Nous avons démontré que, puisque l'adhérence entre la plaque et l'oxyde est suffisamment forte pour empêcher une diaphonie mécanique entre les différentes cavités d'une même base, plusieurs résonateurs peuvent être facilement réalisés en une seule étape d'impression. Ce travail de thèse montre que la micro-maçonnerie est une technique simple et efficace pour la réalisation de résonateurs MEMS actifs de type plaque à cavité scellée. / Lately, transfer printing, a technique that is used to transfer diverse materials such as DNA molecules, photoresist, or semiconductor nanowires, has been proven useful for the fabrication of various static silicon structures under the name micro-masonry. The present study explores the suitability of the micro-masonry technique to fabricate MEMS resonators. To this aim, silicon microplates were transfer-printed by microtip polymer stamps onto dedicated oxide bases with integrated cavities in order to create suspended plate structures. The dynamic behavior of fabricated passive structures was studied under atmospheric pressure and vacuum using both external piezo-actuation and thermomechanical noise. Then, active MEMS resonators with integrated electrostatic actuation and capacitive sensing were fabricated using additional post-processing steps. These devices were fully characterized under atmospheric pressure. The intrinsic Q factor of fabricated devices is in the range of 3000, which is sufficient for practical sensing applications in atmospheric pressure and liquid. We have demonstrated that since the bonding between the plate and the device is rigid enough to prevent mechanical crosstalk between different cavities in the same base, multiple resonators can be conveniently realized in a single printing step. This thesis work shows that micro-masonry is a powerful technique for the simple fabrication of sealed MEMS plate resonators.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第21125号 / 工博第4489号 / 新制||工||1698(附属図書館) / 京都大学大学院工学研究科合成・生物化学専攻 / (主査)教授 杉野目 道紀, 教授 吉田 潤一, 教授 松田 建児 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM