<p>Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. This work presents different issues on epitaxialgrowth, defect density, dopant incorporation and electricalproperties of SiGeC epitaxial layers, intended for variousdevice applications.</p><p>Non-selective and selective epitaxial growth of Si_1-x-yGe_xC_y(0≤x≤30, ≤y≤0.02) layershave been optimized by using high-resolution x-ray reciprocallattice mapping. The incorporation of carbon into the SiGematrix was shown to be strongly sensitive to the growthparameters. As a consequence, a much smaller epitaxial processwindow compared to SiGe epitaxy was obtained. Differentsolutions to decrease the substrate pattern dependency (loadingeffect) of SiGeC growth have also been proposed. The key pointin these methods is based on reduction of surface migration ofthe adsorbed species on the oxide. In non-selective epitaxy,this was achieved by introducing a thin silicon polycrystallineseed layer on the oxide. The thickness of this seed layer had acrucial role on both the global and local loading effect, andon the epitaxial quality. Meanwhile, in selective epitaxy,polycrystalline stripes introduced around the oxide openingsact as migration barriers and reduce the loading effecteffectively. Chemical mechanical polishing (CMP) was performedto remove the polycrystalline stripes on the oxide.</p><p>Incorporation and electrical properties of boron-doped Si_1-x-yGe_xC_ylayers (x=0.23 and 0.28 with y=0 and 0.005) with aboron concentration in the range of 3x10¹⁸-1x10²¹atoms/cm3 have also been investigated. In SiGeClayers, the active boron concentration was obtained from thestrain compensation. It was also found that the boron atomshave a tendency to locate at substitutional sites morepreferentially compared to carbon. These findings led to anestimation of the Hall scattering factor of the SiGeC layers,which showed good agreement with theoretical calculations.</p><p><b>Keywords:</b>Silicon germanium carbon (SiGeC), Epitaxy,Chemical vapor deposition (CVD), Loading effect, Highresolution x-ray diffraction (HRXRD), Hall measurements, Atomicforce microscopy (AFM).</p>

Electrically conductive or electro-active fibers are the key components of smart and interactive textiles, which could be used in medical, sports, energy, and military applications in the near future. The functionalization of high-performance textile yarns/fibers with conjugated polymers can produce conductive fibers with better electro-mechanical properties, which is difficult with commonly used spinning techniques. In this thesis work, textile-based conductive yarns/fibers were prepared by coating viscose and polyester (PET) yarns with the conjugated polymer PEDOT. For coating purposes, an efficient technique called chemical vapor deposition (CVD) was used, which is a solventless technique and can produce PEDOT polymer layers with high conductivity values. The polymerization of EDOT monomer vapors and coating of oxidant (FeCl3 or FepTS) enriched viscose and PET yarns took place simultaneously. The PEDOT-coated viscose and polyester yarns showed relatively high conductivity values, which could be sufficient for many electronic applications. The polymerization process and the quality of PEDOT polymer strongly depends on different reaction conditions. In this research work, the impact of most of these reaction parameters on the electrical, mechanical, and thermal properties of PEDOT-coated conductive yarns was considered separately. Under specific reaction conditions, it was found that viscose fibers were successfully coated with PEDOT polymer and showed rather high electrical conductivity (≥ 15 S/cm). However, due to the acid hydrolysis of viscose fibers in FeCl3 solutions, the mechanical properties were drastically reduced. In order to improve the mechanical properties of conductive yarns, a relatively stable and chemical-resistant substrate (PET) was coated with PEDOT polymer. Comparative studies between PEDOT-coated viscose and PET conductive yarns showed that the electrical and mechanical properties were enhanced by changing the substrate material. Later on, PEDOT-coated conductive fibers were treated with silicone elastomer solution and due to the thin silicone layers, the hydrophobic properties, flexibility, and durability of coated yarns was improved. Furthermore, a novel electrical resistance-measuring setup was developed, which can be used not only for fibers but also for fabric structures. The electrical characterization of PEDOT-coated conductive yarns showed that it can be used effectively for sensitive fibers without damaging their surface morphology. Finally, the use of conductive yarns as stretch sensors was evaluated. For this purpose, small rectangular knitted patches of conductive yarns were prepared and then the change in electrical resistance values at different extension percentages (5–50%) was investigated. The constant variations in electrical resistance values at different extension and relaxation cycles for longer periods of time revealed that the conductive yarns produced have the potential to be used as stretch sensors for monitoring of vital signs in medical and sports applications. / <p>Thesis for the Degree of Doctor of Philosophy to be presented on March 08, 2013, 10.00 in KA-salen, Kemigården 4, Chalmers University of Technology, Gothenburg</p>

This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for H2desorption was extracted. Film properties such asresistivity, mobility, carrier concentration and grain growthwere studied after crystallization using either furnaceannealing or rapid thermal annealing (RTA). In order tointegrate an epitaxial base, non-selective epitaxial growth(NSEG) of Si and SiGe in a lamp-heated single-waferreduced-pressure CVD reactor was examined. The growth kineticsfor Si epitaxy and poly-Si deposition showed a differentdependence on the deposition conditions i.e. temperature andpressure. The growth rate difference was mainly due to growthkinetics rather than wafer surface emissivity effects. However,it was observed that the growth rate for Si epitaxy and poly-Sideposition was varying during growth and the time-dependencewas attributed to wafer surface emissivity variations. A modelto describe the emissivity effects was established, taking intoconsideration kinetics and the reactor heating mechanisms suchas heat absorption, emission andconduction. Growth ratevariations in opening of different sizes (local loading) andfor different oxide surface coverage (global loading) wereinvestigated. No local loading effects were observed, whileglobal loading effects were attributed to chemical as well astemperature effects. Finally, misfit dislocations formed in theSiGe epitaxy during NSEG were found to originate from theinterface between the epitaxial and polycrystalline regions.The dislocations tended to propagate across the activearea. <b>Keywords:</b>chemical vapor deposition (CVD), bipolarjunction transistor (BJT), heterojunction bipolar transistor(HBT), silicon-germanium (SiGe), epitaxy, poly-Si emitter,in situdoping, non-selective epitaxy (NSEG), loadingeffect, emissivity effect

Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous. Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow. Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers. The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed. SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed. <b>Key words:</b>Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.

<p>This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si_1-xGe_x) films for high-speed bipolar transistors.<i>In situ</i>doping of polycrystalline silicon (poly-Si)using phosphine (PH₃) and disilane (Si₂H₆) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for H₂desorption was extracted. Film properties such asresistivity, mobility, carrier concentration and grain growthwere studied after crystallization using either furnaceannealing or rapid thermal annealing (RTA). In order tointegrate an epitaxial base, non-selective epitaxial growth(NSEG) of Si and SiGe in a lamp-heated single-waferreduced-pressure CVD reactor was examined. The growth kineticsfor Si epitaxy and poly-Si deposition showed a differentdependence on the deposition conditions i.e. temperature andpressure. The growth rate difference was mainly due to growthkinetics rather than wafer surface emissivity effects. However,it was observed that the growth rate for Si epitaxy and poly-Sideposition was varying during growth and the time-dependencewas attributed to wafer surface emissivity variations. A modelto describe the emissivity effects was established, taking intoconsideration kinetics and the reactor heating mechanisms suchas heat absorption, emission andconduction. Growth ratevariations in opening of different sizes (local loading) andfor different oxide surface coverage (global loading) wereinvestigated. No local loading effects were observed, whileglobal loading effects were attributed to chemical as well astemperature effects. Finally, misfit dislocations formed in theSiGe epitaxy during NSEG were found to originate from theinterface between the epitaxial and polycrystalline regions.The dislocations tended to propagate across the activearea.</p><p><b>Keywords:</b>chemical vapor deposition (CVD), bipolarjunction transistor (BJT), heterojunction bipolar transistor(HBT), silicon-germanium (SiGe), epitaxy, poly-Si emitter,<i>in situ</i>doping, non-selective epitaxy (NSEG), loadingeffect, emissivity effect</p>

<p>Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.</p><p>Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.</p><p>Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.</p><p>The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.</p><p>SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.</p><p><b>Key words:</b>Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.</p>

There has been growing interest in two-dimensional (2-D) crystals beyond graphene for next-generation nano-electronics. Transition metal dichalcogenides have been most widely studied, for their semiconducting characteristics and hence, potential applications. This interest has fueled many efforts to establish methods for synthesis of MoS2 layers, a most promising candidate, in controlled numbers over large areas. One of the most scalable methods is chemical vapor deposition (CVD). The current approaches to growth from the vapor phase are by and large very empirical. This thesis is hence concerned with the predictive synthesis of n-layered MoS2 using CVD uniformly over large areas and the correlation of growth parameters with the structural and electronic properties of the deposited films. A simple, relatively non-toxic and non-pyrophoric chemistry, consisting of Mo(CO)6 and H2S was first chosen for vapor phase synthesis. This chemistry allowed synthesis of MoS2 from precursors located outside of the growth reactor, a necessary condition for electronics device technology. Iterative thermodynamic modeling of the Mo-S-C-O-H system and growth was then done to identify the appropriate CVD process windows for the growth of pure MoS2, departures from stoichiometry, contamination and breakdown of equilibrium modelling. Remarkable agreement between theoretical modelling and actual growth has been observed leading to predictable deposition. Within these thermodynamic windows, the gas phase supersaturation were then reduced to obtain better kinetic control over crystal growth. It is shown that control of supersaturation at the very initial stages of growth is critical to reduce the nucleation density and hence obtain monolayers with small defect densities. In addition, it is shown that at higher temperatures the kinetics of nucleation and growth are determined by the supersaturation on the growth surface. Physico-chemical modelling reveals that this steady state supersaturation is determined by the kinetics of adsorption and desorption. All of this understanding has been used to realize a variety of structures from discrete crystalline islands- 30 nm to 150 microns- to deposits with controlled number of layers – n =1 to 6 or greater- uniformly over large areas on quartz and sapphire. Gas phase chemistry also affects the electrical characteristics of the as deposited layers. It is shown, for the first time, that by changing gas phase Mo to S ratios the stoichiometry of the deposited layers MoS2 can be made metal or chalcogen deficient. This yields MoS2 that can be either p-type or n-type. p-type and n-type MoS2 with mobilities up to 7.4 cm2/Vs and 40 cm2/Vs respectively are demonstrated. FETs fabricated on MoS(2-x) samples (increasing x) with varying stoichiometry showed a maximum on-current of 18 μA (4.5 μA/μm) in vacuum and 0.6 μA (0.15 μA/μm) in air for a drain bias Vds = 1 V. Sulphur deficiency also affect reliability. While samples with a higher concentration of sulphur vacancies have higher mobility in vacuum, the mobility degrades significantly in air and gets reversed on annealing in H2S. The details of such correlation between growth and electrical characteristics are discussed in this thesis.

Cette thèse s’inscrit dans le cadre du développement de nouveaux matériaux composites multifonctionnels, permettant de remplacer l’aluminium en tant qu’élément constituant le packaging de l’électronique embarquée dans les avions, afin de rendre ces derniers plus légers. L’association d’un polymère mécaniquement résistant avec des nano-charges conductrices est une alternative prometteuse. Cette thèse concerne l’étude du procédé de Dépôt Chimique à partir d’une phase Vapeur (CVD) en lit fluidisé pour déposer des métaux conducteurs, tels que le fer et le cuivre, à la surface de nanotubes de carbone multi-parois (MWCNTs) produits industriellement (Arkema Graphistrength®C100), enchevêtrés en pelotes poreuses de 388 μm de diamètre. Tout d’abord, afin d’augmenter la réactivité de surface des nanotubes, un procédé d’oxydation en lit fluidisé a été étudié à température ambiante, à partir de plusieurs mélanges gazeux à base d’ozone. Les diverses analyses réalisées (MET, spectroscopie IR, XPS,..) montrent que des groupements chimiques de type hydroxyl, acide carboxylique, éther, … sont greffés de façon uniforme sur toute la surface externe des MWCNTs et que leurs parois externes sont aussi gravées de façon modérée et localisée. Au final, il apparait que les défauts créés et les fonctions oxygénées greffées ont permis d’accroitre le nombre de sites de nucléation sur la surface des nanotubes et donc la masse de métal déposé. Le dépôt de fer à partir de ferrocène Fe(C5H5)2 a été étudié à haute température (entre 400 et 650°C), sous différentes ambiances gazeuses (azote, hydrogène, air, vapeur d’eau). Les analyses réalisées (MEB-FEG, DRX, MET, ICP-MS, ...) montrent un dépôt uniforme du bord jusqu’au coeur des pelotes, de nanoparticules à base de carbure de fer Fe3C prisonnières de l’enchevêtrement des nanotubes. La présence d’hydrogène a permis de minimiser la formation parasite de nano-objets (tubes et fibres). Le dépôt de cuivre à partir d’acétylacétonate de cuivre (II) Cu(C5H7O2)2 a été étudié entre 250 et 280°C sous hydrogène. Les caractérisations réalisées indiquent que des nanoparticules de Cu pur ont été déposées sur l’ensemble des parois externes des MWCNTs, du bord au coeur des pelotes. L’ensemble des résultats obtenus démontre que le procédé de CVD en lit fluidisé est capable de déposer de façon uniforme des métaux à la surface de nanotubes de carbone enchevêtrés en pelotes poreuses, pour des conditions opératoires spécifiquement choisies. / This Ph.D project is part of the development of new composite multi-functional materials allowing replacing aluminum in the on-board electronic packaging of airplanes, to make them lighter. The combination of a polymer mechanically resistant with conductive nano-fillers is a promising alternative. The thesis concerns the study of the Fluidized Bed Chemical Vapor Deposition (CVD) process of conductive metals, such as iron and copper, on the surface of industrial multi-walled carbon nanotubes (MWCNTs, Arkema Graphistrength®C100) tangled in porous balls of 388 μm in diameter. First, in order to increase the surface reactivity of nanotubes, an oxidation process in fluidized bed has been studied at room temperature, from several gaseous mixtures containing ozone. The various analyses (TEM, IR spectroscopy, XPS, …) show that hydroxyl, carboxylic acid, ether, … chemical bonds are grafted uniformly on all the outer surface of MWCNTs and that their outer walls are locally and moderately etched. At the end, it appears that the created defects and the oxygen containing bonds have allowed to increase the number of nucleation sites on the nanotubes surface and then the weight of the deposited metal. The iron deposit from ferrocene Fe(C5H5)2 has been studied at high temperature (between 400 and 650°C) under different gaseous atmospheres (nitrogen, hydrogen, air, water vapor). The analyses (FEG SEM, XRD, TEM, ICP-MS, ...) show a uniform deposit from the outer part to the center of the balls, of nanoparticles containing iron carbide Fe3C. The presence of hydrogen has allowed minimizing the parasitic formation of nano-objects (tubes and fibers). The copper deposition from copper (II) acetylacetonate Cu(C5H7O2)2 has been studied at 250-280°C under hydrogen. The characterizations indicate that nanoparticles of pure copper have been deposited on all the MWCNT outer walls, from the outer part to the center of the balls. The whole results obtained prove that the Fluidized Bed CVD process is able to deposit uniformly metals on the outer surface of MWCNTs tangled in porous balls, for specifically chosen operating conditions.

Cette thèse porte sur la modélisation des plasmas micro-ondes en mélanges H2/CH4 et H2/CH4/B2H6, utilisés pour le dépôt de diamant intrinsèque et de diamant dopé au bore. L'objectif est d'établir des modèles de cinétique chimique afin de décrire la phase gazeuse et d'appréhender les limitations des modèles physiques nécessaires à l'étude des plasmas H2/CH4 et H2/CH4/B2H6 fonctionnant à haute densité de puissance (haute pression / haute puissance). L'étude repose sur une approche numérique à travers plusieurs modèles physique (1D et 2D) et chimiques qui permet la description physico-chimique de la phase plasma en fonction de nombreux paramètres expérimentaux (pression, puissance, composition du gaz). Une comparaison des résultats numériques a été effectuée systématiquement avec des mesures de densités intégrées radialement réalisées par TDLAS et OES pour les espèces CH4, CH3, C2H2, C2H4, C2H6, B2H6 et B. Cette comparaison a pour objectif la validation des modèles physiques et des schémas cinétiques. Des écarts significatifs entre le modèle et l'expérience ont révélé une limitation intrinsèque à l'utilisation d'une approche ID radiale pour décrire les propriétés du plasma pour les conditions de haute densité de puissance. L'utilisation d'un modèle 2D fluide conçu à partir du logiciel ANSYS Fluent propose une meilleure description des phénomènes de transport mais ne permet pas de prendre en compte les processus électroniques. L'analyse de la composition chimique des plasmas micro-onde H2/CH4, H2/B2/H6 et H2/CH4/ B2H6 a montré une limitation des schémas cinétiques décrivant ces mélanges par une large gamme de conditions opératoires. En particulier les mécanismes C/B de ces modèles ne reproduisent pas la forte influence observée expérimentalement de l'addition de méthane sur le bore atomique. Enfin une étude numérique sur la distribution spatiale des espèces borées à poximité de la surface est confrontée à des résultats expérimentaux sur le dopage de diamant en fonction de différents paramètres du procédé. / This thesis deals with modelling of high power density microware plasmas of H2/CH4 and H2/CH4/B2H6 mixtures used for growing intrinsic and boron-doped diamond films. The aim of this work is to establish chemical kinetic schemes in order to describe the gas phase composition and to manage limitations of physical models of high power density H2/CH4 and H2/CH4/B2H6 plasmas. This investigation relies on a numerical approach using different physical models (ID and 2D) as well as chemical models according to differents experimental parameters (pressures, power, gas composition). Comparisons are carried out with integrated densities of CH4, CH3, C2H2, C2H4, C2H6, B2H6 and B measured by TDLAS and OES in order to validate the models. Significant discrepancies highlight limitation of ID approach for high power density whereas the use of a 2D fluid model (Fluent based) proposes better description of transport phenomena. The chemical analysis of H2/CH4, H2/B2H6 and H2/CH4/B2H6 MW plasmas also shows a limitation of the current kinetic schemes for a wide range of operating conditions. In particular C/B mechanisms do not reproduce the strong influence of methane addition on B. At least, a numerical study of spatial composition of boron species near the substrate is compared to experimental results on doping efficiency.

No description available.