Thin film chalcogenide solar cells are promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS)-based devices are already produced at industrial scale and record laboratory efficiency surpasses 22 %. Cu2ZnSn(S,Se)4 (CZTS) is an alternative material that is based on earth-abundant elements. CZTS device efficiency above 12 % has been obtained, indicating a high potential for improvement. In this thesis, in-line vacuum, sputtering-based processes for the fabrication of complete thin film chalcogenide solar cells on stainless steel substrates are studied. CIGS absorbers are deposited in a one-step high-temperature process using compound targets. CZTS precursors are first deposited by room temperature sputtering and absorbers are then formed by high temperature crystallization in a controlled atmosphere. In both cases, strategies for absorber layer improvement are identified and implemented. The impact of CZTS annealing temperature is studied and it is observed that the absorber grain size increases with annealing temperature up to 550 °C. While performance also improves from 420 to 510 °C, a drop in all solar cell parameters is observed for higher temperature. This loss is caused by blisters forming in the absorber during annealing. Blister formation is found to originate from gas entrapment during precursor sputtering. Increase in substrate temperature or sputtering pressure leads to drastic reduction of gas entrapment and hence alleviate blister formation resulting in improved solar cell parameters, including efficiency. An investigation of bandgap grading in industrial CIGS devices is conducted through one-dimensional simulations and experimental verification. It is found that a single gradient in the conduction band edge extending throughout the absorber combined with a steeper back-grading leads to improved solar cell performance, mainly due to charge carrier collection enhancement. The uniformity of both CIGS and CZTS 6-inch solar cells is assessed. For CZTS, the device uniformity is mainly limited by the in-line annealing process. Uneven heat and gas distribution resulting from natural convection phenomenon leads to significant lateral variation in material properties and device performance. CIGS solar cell uniformity is studied through laterally-resolved material and device characterization combined with SPICE network modeling. The absorber material is found to be laterally homogeneous. Moderate variations observed at the device level are discussed in the context of large area sample characterization. Power conversion efficiency values above 15 % for 225 cm2 CIGS cells and up to 5.1 % for 1 cm2 CZTS solar cells are obtained.

Resumen (Castellano) El aumento del consumo de energía global junto con las preocupaciones ambientales ha generado mucho interés por las fuentes de energía alternativas y limpias, como la energía solar fotovoltaica. Los investigadores en la comunidad fotovoltaica han estado buscando formas de reducir costos mientras mantienen o aumentan las eficiencias. Una mejor comprensión de los materiales implicados es esencial para el rápido desarrollo de nuevas tecnologías. Las películas delgadas I-III-VI2 ofrecen sistemas prometedores para lograr células solares de alta eficiencia a un costo menor. De hecho, al adaptar la composición de los compuestos, es posible cambiar la banda prohibida del material para captar la luz solar de manera más eficiente. Esta tesis se centra en la preparación y caracterización del material de la capa absorbente, especialmente las películas delgadas nanocristalinas y la consideración de las características estructurales y eléctricas de dicha capa principal absorbente de células. La tesis examina cómo las diferentes técnicas de preparación y uso del material podrían afectar las propiedades del películas delgadas sintetizadas. Películas delgadas CuInSe2 y CuInS2 se depositaron sobre sustratos de vidrio ITO usando la técnica de electrodeposición en solución acuosa. Las películas electrodepositadas se caracterizaron por difracción de rayos X (XRD), microscopía electrónica de barrido (SEM) y análisis de rayos X de energía dispersiva (EDS). Se investigaron los efectos de recocido sobre los precursores electrodepositados. La estructura de calcopirita de CuInSe2/CuInS2 mostró una mejora de la cristalinidad después del tratamiento posterior de selenización/sulfurización en atmósfera Se/S, respectivamente. Los estudios de XRD y SEM revelaron una mejora de la calidad cristalina de las películas de CIS después de los tratamientos térmicos. Las propiedades ópticas de las películas delgadas recocidas CuInSe2-Se y CuInSe2-S se han estudiado para determinar el efecto del proceso de recocido en diferentes ambientes de selenio y azufre. Además, modificamos el CuInxCryGa1-x-ySe2 de cobre indio, donde x = 0.4, y = (0.0, 0.1, 0.2, 0.3) la capa de superestrato por el proceso de recubrimiento por centrifugado. CuInxCryGa1-xySe2 donde x = 0.4, y = (0.0, 0.1, 0.2, 0.3) nanopartículas han sido sintetizadas en primer lugar usando un método hidrotermal químico húmedo que se basa en un proceso térmico sin vacío sin ningún proceso de selenización adicional. Introduciendo diferentes fuentes de metal en un autoclave con etilenamina como solvente, se obtuvieron nanopartículas de CIGS a diferentes temperaturas en un rango de 190-230 °C. Los resultados de la difracción de rayos X (XRD) confirmaron la formación de una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalmente, se estudió el efecto de la temperatura de recocido en los materiales tipo Kesterita (como el Cu2ZnSnS4) que son materiales de muy bajo costo y que no dañan el medio ambiente. Estudiamos el crecimiento de las películas delgadas cuaternarias Cu2ZnSnS4 (CZTS) de kesterita mediante un depósito electroquímico de un solo paso seguido de un recocido a baja temperatura. La influencia de diferentes atmósferas de recocido a tiempos de recocido constantes (t = 45 min) y parámetros de control de preparación fijos; es decir, concentración de la solución de materiales de partida (sales de metales precursores), tiempo de deposición y potencial de electrodeposición. Se estudiaron las propiedades estructurales, de composición, morfológicas y ópticas, así como las propiedades fotoelectroquímicas. / Abstract Increasing global energy consumption together with environmental concerns has led to much interest in alternative, cleaner sources of energy such as solar photovoltaic. Researchers in the solar cell community have been looking for ways to reduce costs while maintaining or increasing already high efficiencies. A fundamental understanding of the materials under consideration is essential to rapid development of new technologies. The I-III-VI2 thin films offer promising systems for achieving high efficiency solar cells at lower costs. In fact, by tailoring the chemistry of the compounds it is possible to change the bandgap of the material in order to collect sunlight more efficiently. First of all, this thesis focuses on absorber layer material preparation and characterization, especially nanocrystalline thin films and consideration of both structural and electrical characteristics of such main cell absorber layer.The thesis examines how different preparation techniques and material usage could affect the properties of the synthesized thin films (absorber layer). In this study CuInSe2 and CuInS2 thin films were deposited onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on the electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe2/CuInS2 showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. The optical properties of annealed CuInSe2-Se and CuInSe2-S thin films have been studied in order to determine the effect of annealing process in different selenium and sulfur atmosphere. In the second step we modified copper indium CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3)superstrate layer by spin coating process. CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3) nanoparticles have been synthesized firstly using a wet chemical hydrothermal method that is based on a non-vacuum thermal process without any additional selenization process. Introducing different metal sources in an autoclave with ethylenediamine as solvent, CIGS nanoparticles were obtained at different temperatures range 190-230°C. The X-ray diffraction (XRD) results confirmed the formation of a tetragonal CuInxCryGa1-x-ySe2 chalcopyrite structure. Finally, we turned again to the study of the annealing temperature effect onKesterite materials but this time in those of very low-cost materials and environmentally friendly Cu2ZnSnS4. We studied the growth of quaternary Cu2ZnSnS4 (CZTS) kesterite thin films by a single step electrochemical deposition followed by annealing at low temperature. The influence of different annealing atmospheres at constant annealing times (t = 45 min) and fixed preparation controlling parameters; i.e., starting materials (precursor metal salts) solution concentration, time of deposition and electrodeposition potential. Structural, compositional, morphological, and optical properties, as well as photoelectrochemical properties were studied. / Resum (Valencià) L'augment del consum d'energia global juntament amb les preocupacions ambientals ha generat molt d'interès per les fonts d'energia alternatives i netes, com ara l'energia solar fotovoltaica. Els investigadors de la comunitat fotovoltaica han estat buscant formes de reduir costos mentre mantenen o augmenten les eficiències. Una millor comprensió dels materials implicats és essencial per al ràpid desenvolupament de noves tecnologies. Les pel·lícules primes I-III-VI2 ofereixen sistemes prometedors per aconseguir cèl·lules solars d'alta eficiència a un cost menor. De fet, en adaptar la composició dels compostos, és possible canviar la banda prohibida del material per captar la llum solar de manera més eficient. Aquesta tesi se centra en la preparació i caracterització del material de la capa absorbent, especialment les pel·lícules primes nanocristal·lines i la consideració de les característiques estructurals i elèctriques d'aquesta capa principal absorbent de cèl·lules. La tesi examina com les diferents tècniques de preparació i ús del material podrien afectar les propietats del pel·lícules primes sintetitzades. Pel·lícules primes CuInSe2 i CuInS2 es van dipositar sobre substrats de vidre ITO usant la tècnica d'electrodeposició en solució aquosa. Les pel·lícules electrodepositadas es van caracteritzar per difracció de raigs X (XRD), microscòpia electrònica de rastreig (SEM) i anàlisi de raigs X d'energia dispersiva (EDS). Es van investigar els efectes de recuit sobre els precursors electrodepositados. L'estructura de calcopirita de CuInSe2/CuInS2 va mostrar una millora de la cristal·linitat després del tractament posterior de selenització/sulfurització en atmosfera de Se o S, respectivament. Els estudis de XRD i SEM van revelar una millora de la qualitat cristal·lina de les pel·lícules de CIS després dels tractaments tèrmics. Les propietats òptiques de les pel·lícules primes recuites CuInSe2-Es i CuInSe2-S s'han estudiat per determinar l'efecte del procés de recuit en diferents ambients de seleni i sofre. A més, modifiquem el CuInxCryGa1-x-ySe2 de coure indi, on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) la capa d'superstrat pel procés de recobriment per centrifugat. CuInxCryGa1-x-ySe2 on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) nanopartícules han estat sintetitzades en primer lloc fent servir un mètode hidrotermal químic humit que es basa en un procés tèrmic sense buit sense cap procés de selenización addicional. Introduint diferents fonts de metall en un autoclau amb etilenamina com solvent, es van obtenir nanopartícules de CIGS a diferents temperatures en un rang de 190- 230 °C. Els resultats de la difracció de raigs X (XRD) van confirmar la formació d'una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalment, es va estudiar l'efecte de la temperatura de recuit en els materials tipus kesterita (com el Cu2ZnSnS4) que són materials de molt baix cost i que no danyen el medi ambient. Vam estudiar el creixement de les pel·lícules primes quaternàries Cu2ZnSnS4 (CZTS) de kesterita mitjançant un dipòsit electroquímic d'un sol pas seguit d'un recuit a baixa temperatura. La influència de diferents atmosferes de recuit a temps de recuit constants (t = 45 min) i paràmetres de control de preparació fixos; és a dir, concentració de la solució de materials de partida (sals de metalls precursors), temps de deposició i potencial d'electrodeposició. Es van estudiar les propietats estructurals, de composició, morfològiques i òptiques, així com les propietats fotoelectroquímiques / Kamal Abdelhamied Saber, S. (2018). Synthesis and characterization of some nano-selenides and their applications in solar cells [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/107389 / TESIS

No description available.

Die als Absorbermaterial für Dünnschichtsolarzellen geeigneten Verbindungshalbleiter Cu2ZnSnS4 (CZTS) und Cu2ZnSnS(4-x)Sex (x<3, CZTSSe) konnten erfolgreich durch Kombination der elektrochemischen Legierungsabscheidung und der anschließenden Sulfurisierung in H2S-haltiger Atmosphäre hergestellt werden. In früheren Arbeiten wurden die viel versprechenden Eigenschaften von CZTS und Cu2ZnSnSe4 (CZTSe), als In und Ga freie und damit kostengünstige Alternativen, bereits ausführlich vorgestellt. Im Rahmen dieser Arbeit konnte anhand von kristallographischen Ergebnissen sowie durch Untersuchungen der Bandlückenenergien bestätigt werden, dass die Kesterite CZTS (1,46eV) und CZTSSe (1,32eV) erfolgreich mittels einer nasschemischen Vorstufe herstellbar sind. Weiterhin wurde erstmalig der Zusammenhang unterschiedlicher Stöchiometrien anhand ermittelter Halbleitereigenschaften (Na, Eg, EFB) gezeigt. Auf diesen Ergebnissen basierend wurde eine optimale Zusammensetzung zur Herstellung funktionaler Absorberschichten bestimmt. Dennoch zeigt sich, dass die Prozessparameter der Gasphasen-Sulfurisierung entscheidend die Bildung homogener Schichten beeinflusst. Die beobachtete große Kristallverteilung und die dabei auftretenden lokalen Löcher setzten die Funktionalität der hergestellten Solar Zellen (Al/ZnO:Al/CdS/CZTS/Mo/Glas) deutlich herab. Trotz der geringen Wirkungsgrade konnte aus einer Reihe unterschiedlicher Absorbermaterialien eine optimale Stöchiometrie (~Cu2Zn1.1Sn0.9S4) ermittelt werden. Die elektrochemische Coabscheidung von Se (~Cu2Zn1.2Sn0.9Se0.3) und die dadurch erfolgte partielle Substitution von S durch Se bewirkte, verglichen zur CZTS Morphologie, eine kompaktere und geschlossene Schichtstruktur. Der Einfluss des Selenanteils wurde dabei anhand detaillierter kristallographischer Untersuchungen und einer reduzierten Bandlückenenergie (1,32eV) bestätigt. Obwohl deutlich reproduzierbare Diodeneigenschaften über große Flächen beobachtet wurden, konnten keine Verbesserung des Wirkungsgrads erzielt werden. Cu2ZnSn (CZT) und Cu2ZnSnSe0.3 (CZTSe) Precursorschichten wurden mittels eines neu entwickelten alkalischen sowie zyanidfreien Elektrolyten auf Mo beschichteten Glassubstraten abgeschieden. Dieser alkalische Elektrolyt zeigte eine hohe Langzeitstabilität und die bisher unbekannte Möglichkeit der Abscheidung hoher Zinnanteile bei niedrigen Temperaturen. Aufgrund detaillierter elektrochemischer Untersuchungen konnte ein fundamentales Verständnis hinsichtlich der Einflüsse unterschiedlicher Additive, Konzentrationen und Temperaturen erzielt werden. Diese Ergebnisse konnten zur Interpretation der beobachteten potentialabhängigen Legierungsbildung herangezogen werden. Im Rahmen eines wesentlich fundamentalen Ansatzes erfolgte weiterhin die Charakterisierung der Legierungsbildung, ausgehend von unterschiedlicher Metallgehalte im Elektrolyten, anhand eines kürzlich publizierten kinetischen Modells zur elektrochemischen Legierungsabscheidung. Basierend auf diesen Untersuchungen konnte das vorgestellte Badsystem aufgrund einer genauen Einstellbarkeit und Nachdosierung erfolgreich zur ternären Abscheidung von Precursorschichten verwendet werden. / Cu2ZnSnS4 (CZTS) and Cu2ZnSnS(4-x)Sex (x<0.3, CZTSSe) thin film solar cell absorber materials were successfully formed by combining a one step electrochemical precursor deposition followed by a vapour phase sulfurization process. CZTS and Cu2ZnSnSe4 (CZTSe) are known as promising candidates for thin film solar cell applications without using rare and thus expensive materials like In and Ga. This thesis confirmed by XRD and band gap energy data the potential to produce the kesterite type semiconductor materials CZTS (1,46eV) and CZTSSe (1,32eV) via a wet chemical precursor step. This paper presents for the first time the impact of different absorber compositions on semiconductor properties (NA, Eg, EFB) of the bulk material. Based on this data an optimum stoichiometry was identified to produce a functional absorber layer. However, sulfurization remained as the most critical process to achieve homogeneous thin films. In the most cases local pin holes and a large crystal size distribution diminished the conversion efficiency of produced solar cell samples (Al/ZnO:Al/CdS/CZTS/Mo/glass). Nevertheless an optimum performance was found for a slight excess of Zn (~Cu2Zn1.1Sn0.9S4). The electrochemical codeposition of Se (~Cu2Zn1.2Sn0.9Se0.3) at the precursor step enabled to do a partial substitution of S by Se which was identified to improve CZTS morphology into a homogeneous and dense layer. The expected impact of Se was also confirmed by detailed crystallographic and band gap energy (1.32eV) measurements. Although solar cell function was found for enlarged areas the low overall conversion efficiency could be not pushed to higher levels. Cu2ZnSn (CZT) and Cu2ZnSnSe0.3 (CZTSe) precursor layers were directly electrodeposited on Mo coated soda line glass substrates from a new developed alkaline cyanide free alloy bath system. The presented electrolyte showed high long term stability and an up to now unknown high rate of Sn codeposition at low electrolyte temperatures. Results of a detailed electrolyte characterization gave a fundamental understanding of additive, concentration and temperature effects. This knowledge was successfully linked to explain the potential depended alloy composition effects. As a more fundamental approach a new kinetic model of the electrochemical alloy deposition was used to characterize the impact of changed electrolyte metal contents on the resulting alloy composition. Based on this data the presented alloy bath system was successfully applied for precise adjustment and replenishment during the ternary precursor deposition.

Die als Absorbermaterial für Dünnschichtsolarzellen geeigneten Verbindungshalbleiter Cu2ZnSnS4 (CZTS) und Cu2ZnSnS(4-x)Sex (x<3, CZTSSe) konnten erfolgreich durch Kombination der elektrochemischen Legierungsabscheidung und der anschließenden Sulfurisierung in H2S-haltiger Atmosphäre hergestellt werden. In früheren Arbeiten wurden die viel versprechenden Eigenschaften von CZTS und Cu2ZnSnSe4 (CZTSe), als In und Ga freie und damit kostengünstige Alternativen, bereits ausführlich vorgestellt. Im Rahmen dieser Arbeit konnte anhand von kristallographischen Ergebnissen sowie durch Untersuchungen der Bandlückenenergien bestätigt werden, dass die Kesterite CZTS (1,46eV) und CZTSSe (1,32eV) erfolgreich mittels einer nasschemischen Vorstufe herstellbar sind. Weiterhin wurde erstmalig der Zusammenhang unterschiedlicher Stöchiometrien anhand ermittelter Halbleitereigenschaften (Na, Eg, EFB) gezeigt. Auf diesen Ergebnissen basierend wurde eine optimale Zusammensetzung zur Herstellung funktionaler Absorberschichten bestimmt. Dennoch zeigt sich, dass die Prozessparameter der Gasphasen-Sulfurisierung entscheidend die Bildung homogener Schichten beeinflusst. Die beobachtete große Kristallverteilung und die dabei auftretenden lokalen Löcher setzten die Funktionalität der hergestellten Solar Zellen (Al/ZnO:Al/CdS/CZTS/Mo/Glas) deutlich herab. Trotz der geringen Wirkungsgrade konnte aus einer Reihe unterschiedlicher Absorbermaterialien eine optimale Stöchiometrie (~Cu2Zn1.1Sn0.9S4) ermittelt werden. Die elektrochemische Coabscheidung von Se (~Cu2Zn1.2Sn0.9Se0.3) und die dadurch erfolgte partielle Substitution von S durch Se bewirkte, verglichen zur CZTS Morphologie, eine kompaktere und geschlossene Schichtstruktur. Der Einfluss des Selenanteils wurde dabei anhand detaillierter kristallographischer Untersuchungen und einer reduzierten Bandlückenenergie (1,32eV) bestätigt. Obwohl deutlich reproduzierbare Diodeneigenschaften über große Flächen beobachtet wurden, konnten keine Verbesserung des Wirkungsgrads erzielt werden. Cu2ZnSn (CZT) und Cu2ZnSnSe0.3 (CZTSe) Precursorschichten wurden mittels eines neu entwickelten alkalischen sowie zyanidfreien Elektrolyten auf Mo beschichteten Glassubstraten abgeschieden. Dieser alkalische Elektrolyt zeigte eine hohe Langzeitstabilität und die bisher unbekannte Möglichkeit der Abscheidung hoher Zinnanteile bei niedrigen Temperaturen. Aufgrund detaillierter elektrochemischer Untersuchungen konnte ein fundamentales Verständnis hinsichtlich der Einflüsse unterschiedlicher Additive, Konzentrationen und Temperaturen erzielt werden. Diese Ergebnisse konnten zur Interpretation der beobachteten potentialabhängigen Legierungsbildung herangezogen werden. Im Rahmen eines wesentlich fundamentalen Ansatzes erfolgte weiterhin die Charakterisierung der Legierungsbildung, ausgehend von unterschiedlicher Metallgehalte im Elektrolyten, anhand eines kürzlich publizierten kinetischen Modells zur elektrochemischen Legierungsabscheidung. Basierend auf diesen Untersuchungen konnte das vorgestellte Badsystem aufgrund einer genauen Einstellbarkeit und Nachdosierung erfolgreich zur ternären Abscheidung von Precursorschichten verwendet werden. / Cu2ZnSnS4 (CZTS) and Cu2ZnSnS(4-x)Sex (x<0.3, CZTSSe) thin film solar cell absorber materials were successfully formed by combining a one step electrochemical precursor deposition followed by a vapour phase sulfurization process. CZTS and Cu2ZnSnSe4 (CZTSe) are known as promising candidates for thin film solar cell applications without using rare and thus expensive materials like In and Ga. This thesis confirmed by XRD and band gap energy data the potential to produce the kesterite type semiconductor materials CZTS (1,46eV) and CZTSSe (1,32eV) via a wet chemical precursor step. This paper presents for the first time the impact of different absorber compositions on semiconductor properties (NA, Eg, EFB) of the bulk material. Based on this data an optimum stoichiometry was identified to produce a functional absorber layer. However, sulfurization remained as the most critical process to achieve homogeneous thin films. In the most cases local pin holes and a large crystal size distribution diminished the conversion efficiency of produced solar cell samples (Al/ZnO:Al/CdS/CZTS/Mo/glass). Nevertheless an optimum performance was found for a slight excess of Zn (~Cu2Zn1.1Sn0.9S4). The electrochemical codeposition of Se (~Cu2Zn1.2Sn0.9Se0.3) at the precursor step enabled to do a partial substitution of S by Se which was identified to improve CZTS morphology into a homogeneous and dense layer. The expected impact of Se was also confirmed by detailed crystallographic and band gap energy (1.32eV) measurements. Although solar cell function was found for enlarged areas the low overall conversion efficiency could be not pushed to higher levels. Cu2ZnSn (CZT) and Cu2ZnSnSe0.3 (CZTSe) precursor layers were directly electrodeposited on Mo coated soda line glass substrates from a new developed alkaline cyanide free alloy bath system. The presented electrolyte showed high long term stability and an up to now unknown high rate of Sn codeposition at low electrolyte temperatures. Results of a detailed electrolyte characterization gave a fundamental understanding of additive, concentration and temperature effects. This knowledge was successfully linked to explain the potential depended alloy composition effects. As a more fundamental approach a new kinetic model of the electrochemical alloy deposition was used to characterize the impact of changed electrolyte metal contents on the resulting alloy composition. Based on this data the presented alloy bath system was successfully applied for precise adjustment and replenishment during the ternary precursor deposition.

To support the growing global demand for energy, new sustainable solutions are needed both economically and environmentally. Thermoelectric waste heat recovery and energy harvesting could contribute by increasing industrial process efficiency, as well as powering stand-alone devices, microgenerators, and small body appliances.The structural complexity of quaternary chalcogenide materials provides an opportunity for engineering defects and disorder, to modify and possibly improve specific properties. Cu2ZnSnS4 (CZTS, often kesterite), valued for the abundance and non-toxicity of the raw materials, seems particularly suited to explore these possibilities, as it presents several structural defects and polymorphic phase transformations. The aim of this doctoral work is to systematically investigate the effects of structural polymorphism, disorder, and defects on the thermoelectric properties of CZTS, with particular emphasis to their physical origin. A remarkable case is the order-disorder transition of tetragonal CZTS, which is found responsible for a sharp enhancement in the Seebeck coefficient due to a flattening and degeneracy of the electronic energy bands. This effect, involving a randomization of Cu and Zn cations in certain crystallographic planes, is verified in bulk and thin film samples, and applications are proposed to exploit the reversible dependence of electronic properties on disorder. Low-temperature mechanical alloying is instead discovered stabilizing a novel polymorph of CZTS, which disordered cubic structure is studied in detail, and proposed deriving from sphalerite-ZnS. The total cation disorder in this compound provides an uncommon occurrence in thermoelectricity: a concurrent optimization of Seebeck coefficient, electrical and thermal conductivity. These findings, besides providing new and general understanding of CZTS, can cast light on profitable mechanisms to enhance the thermoelectric performance of semiconducting chalcogenides, as well as delineate alternative and fruitful applications.

Thin-film solar cell research is central to the electricity production of the near future. Photovoltaic technologies based on silicon have a significant portion of the global market and installed capacity. Thin-film solar cells are port of the emerging photovoltaic technologies that are challenging silicon for a part of the electricity production based on solar power. These thin-film technologies, such as copper indium gallium selenide (CIGS) and cadmium telluride (CdTe), are lower cost and require less energy to produce, but also require rare materials. An alternative to these technologies are thin-film solar cells based on more abundant materials. To develop these new materials at Uppsala University, combinatorial synthesis is used. This method produces a significant amount of data across different measurement methods. The data needs to be analysed and combined to gather information about the characteristics of the materials being developed. To facilitate the analysis and combination of data, a database tool was created in MATLAB. The result is a program that allows its User to combine energy-dispersive X-ray spectroscopy (EDS), Raman spectroscopy and Photoluminescence spectroscopy measurements done on solar cell absorber layers. Absorber layers are the section of solar cells where sun lighet is absorbed, and electron-hole pairs are created. The program provides multiple figures and graphs combining the different data collected, enabling the User to draw conclusions about the characteristics of the sample and its suitability as an absorber layer. The combinatorial synthesis database tool created could be user for combinatorial synthesis analysis of other material samples that are not necessarily absorber layers for thin-film solar cells. This report describes both the development of the tool and the code itself.

Semiconductors such as CuInGaSe2 and CdTe have been investigated as absorber layer materials for thin film solar cells since their band gap matches with the solar spectrum. Films as thin as 2m are sufficient for the absorption of the visible part of solar radiation, because they are characterized by a high absorption coefficient. However, the scarcity and high costs of Indium, Gallium and Tellurium have led to concerns on the sustainability of these technologies. The semiconductor Cu2ZnSnS4 (Copper Zinc Tin Sulphide) consisting of abundantly available elements promises to be an excellent photovoltaic absorber material. The present study is focused on the growth and characterization of CZTS/ZnS thin film heterostructure suitable for PV applications. Ultrasonic Spray Pyrolysis (USP), a variation of Spray Pyrolysis is a thin film deposition technique where the solution to be sprayed is atomized by ultrasonic frequencies. The details of the USP experimental set up and the deposition principle are presented in the thesis. The active layers of the solar cell, viz. the CZTS absorber layer and ZnS emitter layer were grown by this technique. The metal top contact was deposited using e-beam evaporation. The effects of copper concentration and sodium diffusion on the Cu2ZnSnS4 film properties were investigated. The films have shown preferred orientation along (112) direction confirming kesterite structure. The optical studies revealed that a reduction of copper in the films will bring the band gap energy to 1.5eV, which will match with the solar spectrum. Sodium diffusion in the CZTS films is found to passivate the grain boundaries and enhance the electrical conductivity. These properties render CZTS films as good photovoltaic absorber layers. ZnS has a high band gap and is non toxic unlike CdS. The influences of variation in substrate temperature and spray duration on the ZnS film properties were examined. The optical studies conducted on ZnS films revealed that they are highly transparent in the visible region of the solar spectrum. The films were found to possess a band gap of 3.5 eV. These properties make them potential candidates as solar cell emitter layers. The CZTS/ZnS heterojunction solar cell was fabricated and subjected to electrical characterization in dark and illuminated conditions. A conversion efficiency of 1.16% was achieved for the device.

No description available.