Les sujets abordés dans cette thèse s'articulent autour de la modélisation numérique du couplage entre l'hydrodynamique et la biologie pour la culture industrielle de microalgues dans des raceways. Ceci est fait au moyen d'un modèle multicouches qui disrétise verticalement les équations de Navier-Stokes hydrostatiques couplé avec un modèle de Droop photosensible pour représenter la croissance des algues, notamment la production de carbone. D'un point de vue numérique, une méthode volumes finis avec schémas cinétiques est appliquée. Elle permet d'obtenir un schéma équilibre qui préserve la positivité de la hauteur d'eau et des quantités biologiques et qui satisfait une inégalité d'énergie. Des simulations sont effectuées en 2D et en 3D, au moyen d'un code C++ développé à cet effet. Du point de vue de l'intérêt pratique de ce travail, ces simulations ont permis de mettre en évidence l'utilité de la roue à aube présente dans les raceways, mais aussi d'exhiber les trajectoires lagrangiennes réalisées par les microalgues, qui permettent de connaitre l'historique lumineux des algues, information d'une grande importance pour les biologistes car elle leur permet d'adapter leurs modèles de croissance phytoplanctoniques à ce contexte très particulier et non naturel. Afin de valider les modèles et les stratégies numériques employées, deux pistes on été explorées. La première consiste à proposer des solutions analytiques pour les équations d'Euler à surface libre, ainsi qu'un modèle biologique spécifique permettant un couplage analytique. La deuxième consiste à faire de l'assimilation de données. Afin de tirer partie de la description cinétique des lois de conservation hyperboliques, une méthode innovante basée sur la construction d'un observateur de Luenberger au niveau cinétique est développée. Elle permet d'obtenir un cadre théorique intéressant pour les lois de conservation scalaires, pour lesquelles on étudie les cas d'observations complètes, partielles en temps, en espace, et bruitées. Pour les systèmes, on se concentre particulièrement sur le système de Saint-Venant, système hyperbolique non linéaire et un observateur basé sur l'observation des hauteurs d'eau uniquement est construit. Des simulations numériques dans les cas scalaires et systèmes, en 1D et 2D sont effectuées et valident l'efficacité de la méthode.

In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on the optical properties of InGaN/GaN single and multiple QW structures, measured at high excitation power densities. I show a correlation exists between the reduction in PL efficiency at high excitation power densities, the phenomenon so-called ``efficiency-droop'', and a broadening of the PL spectra. I also show a distinct change in recombination dynamics, measured by time-resolved photoluminescence (PL), which occurs at the excitation power densities for which efficiency droop is measured. The broadening of the PL spectra at high excitation power densities is shown to occur due to a rapidly redshifting, short-lived high energy emission band. The high energy emission band is proposed to be due to the recombination of weakly localised/delocalised carriers occurring as a consequence of the progressive saturation of the local potential fluctuations responsible for carrier localisation, at high excitation power densities. I report on the effects of varying threading dislocation (TD) density on the optical properties of InGaN/GaN multiple QW structures. No systematic relationship exists between the room temperature internal quantum efficiency (IQE) and the TD density, in a series of nominally identical InGaN/GaN multiple QWs deposited on GaN templates of varying TD density. I also show the excitation power density dependence of the PL efficiency, at room temperatures, is unaffected for variation in the TD density between 2 x107 and 5 x109 cm-2. The independence of the optical properties to TD density is proposed to be a consequence of the strong carrier localisation, and hence short carrier diffusion lengths. I report on the effects of including an InGaN underlayer on the optical and microstructural properties of InGaN/GaN multiple QW structures. I show an increase in the room temperature IQE occurs for the structure containing the InGaN underlayer, compared to the reference. I show using PL excitation spectroscopy that an additional carrier transfer and recombination process occurs on the high energy side of the PL spectrum associated with the InGaN underlayer. Using PL decay time measurements I show the additional recombination process for carriers excited in the underlayer occurs on a faster timescale than the recombination at the peak of the PL spectrum. The additional contribution to the spectrum from the faster recombination process is proposed as responsible for the increase in room temperature IQE.

General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since their lighting efficiency decreases substantially when the injection current increases beyond certain values (typically 10-50 Acm-2). In order to improve the electroluminescence (EL) performance at high currents for InGaN LEDs, two approaches have been undertaken in this thesis. First, we explored the preparation and characterization of non-polar and semi-polar GaN substrates (including a-plane, m-plane and semi-polar planes). These substrates serve as promising alternatives to the commonly used c-plane, with the benefit of a reduced polarization-induced electric field and therefore higher quantum efficiency. It is demonstrated that LEDs on m-plane GaN substrates have inherently higher EL quantum efficiency and better efficiency retention ability at high injection currents than their c-plane counterparts. Secondly, from a device structure level, we explored the possible origins of the EL efficiency degradation at high currents in InGaN LEDs and investigated the effect of hot electrons on EL of LEDs by varying the barrier height of electron blocking layer. A first-order theoretical model is proposed to explain the effect of electron overflow caused by hot electron transport across the LED active region on LED EL performance. The calculation results are in agreement with experimental observations. Furthermore, a novel structure called a “staircase electron injector” (SEI) is demonstrated to effectively thermalize hot electrons, thereby reducing the reduction of EL efficiency due to electron overflow. The SEI features several InyGa1-yN layers, with their In fraction (y) increasing in a stepwise manner, starting with a low value at the first step near the junction with n-GaN.

In light of increasing harmful algal blooms and the need to protect human health and aquatic resources, proactive management approaches merit further study. For this purpose I conducted field samplings to characterize plankton community composition and laboratory experiments to test some approaches to new management schemes in the lower Rincon Delta. On site measurements and microscopic analysis showed that environmental parameters and plankton community composition varied considerably among sampling stations and sampling dates. A recent modeling study suggested that manipulation of freshwater inflow to estuaries might prevent phytoplankton blooms and enhance secondary productivity. To test this theory I conducted three semi-continuous design and flow-through incubation design experiments using natural plankton assemblages. I investigated the effect of two different pulsing regimes of inflow and nutrient loading on zooplankton densities, and phytoplankton biomass and diversity. Despite differences in zooplankton structure and phytoplankton community composition between the two experiment designs, the results confirmed that pulsed inflows might alter plankton dynamics. My findings showed that 3-day pulse treatments consistently supported greater zooplankton densities and higher phytoplankton species diversity when compared to 1-day pulse treatments. In addition, accumulation of phytoplankton biovolume remained low during 3-day pulse treatments. Differences in zooplankton performance between 3-day pulse and 1-day pulse inflow treatments were likely due to the ability of phytoplankton to uptake and store greater amounts of nutrients under conditions of 3-day pulse inflow. This resulted in food of higher quality for zooplankton, and might have supported greater zooplankton population growth rates. Additionally, in an attempt to understand the mechanisms leading to high biodiversity in aquatic ecosystems, I built a resource-storage model and studied the effects of resource-storage on competition of multiple phytoplankton species on multiple abiotic resources. I compared this model with a well-established multi-species competition model. My results showed that for certain species combinations a resource-storage-based model can generate dissimilar outcomes when compared to a model without resource-storage.

In light of increasing harmful algal blooms and the need to protect human health and aquatic resources, proactive management approaches merit further study. For this purpose I conducted field samplings to characterize plankton community composition and laboratory experiments to test some approaches to new management schemes in the lower Rincon Delta. On site measurements and microscopic analysis showed that environmental parameters and plankton community composition varied considerably among sampling stations and sampling dates. A recent modeling study suggested that manipulation of freshwater inflow to estuaries might prevent phytoplankton blooms and enhance secondary productivity. To test this theory I conducted three semi-continuous design and flow-through incubation design experiments using natural plankton assemblages. I investigated the effect of two different pulsing regimes of inflow and nutrient loading on zooplankton densities, and phytoplankton biomass and diversity. Despite differences in zooplankton structure and phytoplankton community composition between the two experiment designs, the results confirmed that pulsed inflows might alter plankton dynamics. My findings showed that 3-day pulse treatments consistently supported greater zooplankton densities and higher phytoplankton species diversity when compared to 1-day pulse treatments. In addition, accumulation of phytoplankton biovolume remained low during 3-day pulse treatments. Differences in zooplankton performance between 3-day pulse and 1-day pulse inflow treatments were likely due to the ability of phytoplankton to uptake and store greater amounts of nutrients under conditions of 3-day pulse inflow. This resulted in food of higher quality for zooplankton, and might have supported greater zooplankton population growth rates. Additionally, in an attempt to understand the mechanisms leading to high biodiversity in aquatic ecosystems, I built a resource-storage model and studied the effects of resource-storage on competition of multiple phytoplankton species on multiple abiotic resources. I compared this model with a well-established multi-species competition model. My results showed that for certain species combinations a resource-storage-based model can generate dissimilar outcomes when compared to a model without resource-storage.

Cette thèse porte sur la commande de réseaux multi-terminaux à courant continu (MTDC) basés sur des convertisseurs multiniveaux modulaires (MMCs).Tout d’abord, notre attention se focalise sur l'énergie stockée en interne dans le MMC qui constitue un degré de liberté additionnel apporté par sa topologie complexe. Afin d’en tirer le meilleur parti, les limites de l’énergie interne sont formulées mathématiquement.Afin de maîtriser la dynamique de la tension DC, l’utilisation de ce nouveau degré de liberté s’avère d’une grande importance. Par conséquent, une nouvelle de stratégie de commande, nommée «Virtual Capacitor Control», est proposée. Cette nouvelle méthode de contrôle permet au MMC de se comporter comme s’il possédait un condensateur de taille réglable aux bornes, contribuant ainsi à l’atténuation des fluctuations de la tension DC.Enfin, la portée de l’étude est étendue au réseau MTDC. L'un des défis majeurs pour un tel système est de faire face à une perte soudaine d'une station de convertisseur qui peut entraîner une grande variation de la tension du système. A cet effet, la méthode de statisme de tension est la plus couramment utilisée. Cependant, l'analyse montre que l'action de contrôle souhaitée risque de ne pas être réalisée lorsque la marge disponible de réserve de puissance du convertisseur est insuffisante. Nous proposons donc une nouvelle structure de contrôle de la tension qui permet de fournir différentes actions en fonction du signe de l'écart de la tension suite à une perturbation, associée à un algorithme qui détermine les paramètres de statisme en tenant compte du point de fonctionnement et de la réserve disponible à chaque station. / The scope of this thesis includes control and management of the Modular Multilevel Converter (MMC)-based Multi-Terminal Direct Current (MTDC).At first, our focus is paid on the internally stored energy, which is the important additional degree of freedom brought by the complex topology of MMC. In order to draw out the utmost of this additional degree of freedom, an in-depth analysis of the limits of this internally stored energy is carried out, and they are mathematically formulated.Then, this degree of freedom of the MMC is used to provide a completely new solution to improve the DC voltage dynamics. A novel control strategy, named Virtual Capacitor Control, is proposed. Under this control, the MMC behaves as if there were a physical capacitor whose size is adjustable. Thus, it is possible to virtually increase the equivalent capacitance of the DC grid to mitigate the DC voltage fluctuations in MTDC systems.Finally, the scope is extended to MMC-based MTDC grid. One of the crucial challenges for such system is to cope with a sudden loss of a converter station which may lead to a great variation of the system voltage. The voltage droop method is commonly used for this purpose. The analysis shows that the desired control action may not be exerted when the available headroom of the converter stations are insufficient. We thus propose a novel voltage droop control structure which permits to provide different actions depending on the sign of DC voltage deviation caused by the disturbance of system voltage as well as an algorithm that determines the droop parameters taking into account the operating point and the available headroom of each station.

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1-100)-oriented (m-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. One of the obstacles impeding the development of this technology is the lack of suitable substrates for high quality materials having semi-polar and nonpolar orientations. Even though the growth of free-standing GaN substrates (homoepitaxy) could produce material of reasonable quality, the native nonpolar and semi-polar substrates are very expensive and small in size. On the other hand, GaN growth of semi-polar and nonpolar orientations on inexpensive, large-size foreign substrates (heteroepitaxy), including silicon (Si) and sapphire (Al2O3), usually leads to high density of extended defects (dislocations and stacking faults). Therefore, it is imperative to explore approaches that allow the reduction of defect density in the semi-polar GaN layers grown on foreign substrates. In the presented work, I develop a cost-effective preparation technique of high performance light emitting structures (GaN-on-Si, and GaN-on-Sapphire technologies). Based on theoretical calculations predicting the maximum indium incorporation efficiency at θ ~ 62º (θ being the tilt angle of the orientation with respect to c-plane), I investigate (11-22) and (1-101) semi-polar orientations featured by θ = 58º and θ = 62º, respectively, as promising candidates for green emitters. The (11-22)-oriented GaN layers are grown on planar m-plane sapphire, while the semi-polar (1-101) GaN are grown on patterned Si (001). The in-situ epitaxial lateral overgrowth techniques using SiNx nanoporous interlayers are utilized to improve the crystal quality of the layers. The data indicates the improvement of photoluminescence intensity by a factor of 5, as well as the improvement carrier lifetime by up to 85% by employing the in-situ ELO technique. The electronic and optoelectronic properties of these nonpolar and semi-polar planes include excitonic recombination dynamics, optical anisotropy, exciton localization, indium incorporation efficiency, defect-related optical activities, and some challenges associated with these new technologies are discussed. A polarized emission from GaN quantum wells (with a degree of polarization close to 58%) with low non-radiative components is demonstrated for semi-polar (1-101) structure grown on patterned Si (001). We also demonstrated that indium incorporation efficiency is around 20% higher for the semi-polar (11-22) InGaN quantum wells compared to its c-plane counterpart. The spatially resolved cathodoluminescence spectroscopy demonstrates the uniform distribution of indium in the growth plane. The uniformity of indium is also supported by the relatively low exciton localization energy of Eloc = 7meV at 15 K for these semi-polar (11-22) InGaN quantum wells compared to several other literature reports on c-plane. The excitons are observed to undergo radiative recombination in the quantum wells in basal-plane stacking faults at room temperature. The wurtzite/zincblende electronic band-alignment of BSFs is proven to be of type II using the time-resolved differential transmission (TRDT) method. The knowledge of band alignment and degree of carrier localization in BSFs are extremely important for evaluating their effects on device properties. Future research for better understanding and potential developments of the semi-polar LEDs is pointed out at the end.