Submitted by Rosivalda Pereira (mrs.pereira@ufma.br) on 2017-06-07T17:57:54Z No. of bitstreams: 1 JoseEdilsonSilva.pdf: 1819277 bytes, checksum: 391131ff8e28cc1636472453e9b94fd8 (MD5) / Made available in DSpace on 2017-06-07T17:57:54Z (GMT). No. of bitstreams: 1 JoseEdilsonSilva.pdf: 1819277 bytes, checksum: 391131ff8e28cc1636472453e9b94fd8 (MD5) Previous issue date: 2009-11-30 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa e ao Desenvolvimento Científico e Tecnológico do Maranhão (FAPEMA) / In this work we studied the adsorption and the encapsulation of the amino acid lysine with the double wall carbon nanotube (DWCNT) (8,0)@(17,0). This study is of interest for applications technological, because it allows to analyze the carbon nanotubes in di erent atmospheres and also to give it the speci c functions with biological goals. To treat with details the properties structural and electronics of the considered system, we used one theoretical approach based on calculations of rst principles making use of the density functional theory with the approach of the generalized gradient to describe the exchange and correlation term. The calculations were accomplished using the program SIESTA. When the system reached the expected convergence, the analysis of electronic properties through the structure of the band and density of states showed signi cant changes in behavior of system. System (8,0)@(17,0) DWCNT with lysine interacting on the outer wall begins to show character metallic, while the system with the lysine encapsulated energy gap is 0.30 eV to 0.19 eV. Also the degenerate levels of the system pure lose the degeneration when amino acid lysine is adsorbed and also encapsulated in DWCNT. To check the stability of these systems, we calculate the binding energy, which has a value of -1.63 eV indicating that this system is highly stable, while the (8,0)@(17,0) DWCNT with lysine encapsulated has a binding energy of the order of 3.24 eV, indicating the low stability. / Neste trabalho estudamos a adsorção e o encapsulamento do aminoácido lisina com o nanotubo de carbono de camada dupla (DWCNT) (8,0)@(17,0). Este estudo é de interesse para aplicações tecnológicas, pois permite analisar os nanotubos de carbono em diferentes ambientes e também dar-lhe funções específicas com metas biológicas. Para tratar com detalhes as propriedades estruturais e eletrônica do sistema considerado, utilizamos uma abordagem teórica baseada em cálculos de primeiros princípios, fazendo uso da teoria do funcional da densidade com a aproximação do gradiente generalizado para o termo de troca e correlação. Os cálculos foram realizados usando o programa SIESTA. Quando o sistema atingiu a convergência esperada, a análise das propriedades eletrônicas através da estrutura de banda e da densidade de estado mostraram mudan ças significativas no comportamento do sistema. O sistema DWCNT (8,0)@(17,0) com a lisina interagindo na parede externa passa a apresentar caráter metálico, enquanto que o sistema com a lisina encapsulada a energia do gap passa de 0.30 eV para 0.19 eV. Também os níveis degenerados do sistema puro perdem a degenerescência quando o aminoácido lisina é adsorvido e também encapsulado ao DWCNT. Para veri ficar a estabilidade destes sistemas, calculamos a energia de ligação, a qual apresenta um valor de -1.63 eV indicando que este sistema é altamente estável, enquanto que o DWCNT (8,0)@(17,0) com a lisina encapsulada tem uma energia de ligação da ordem de 3.24 eV, indicando a baixa estabilidade.

Dans cette thèse nous explorons, par microscopie par effet tunnel (STM), les effets de surface et du nombre de coordination sur les propriétés électroniques d’un atome de métal de transition occupant un site cationique dans la surface de GaAs(110). Par une méthode de dépôt in situ, nous avons déposé des adatomes de Cr sur des faces clivées de GaAs(110) avec des taux de couvertures très inférieurs à une monocouche. Et en appliquant des rampes de tensions proches de quelques adatomes magnétiques cibles à l’aide de la pointe du STM, nous les avons manipulés et substitués par des atomes de Ga dans les deux premières couches de la surface de GaAs(110). Obtenant ainsi des atomes magnétiques ayants des environnements atomiques différents, c’est-à-dire des adatomes de Cr, des atomes de Cr formant trois liaisons avec trois atomes d’As voisins (Cr en première couche) et des atomes de Cr formant quatre liaisons avec quatre atomes d’As voisins (Cr en deuxième couche). Pour étudier les propriétés électroniques de ces atomes de transition en fonction de leur position dans la surface de GaAs(110), nous avons réalisé sur eux des imageries STM à différents signes de tension ainsi que des mesures de spectroscopie par effet tunnel (STS). Ils ont montré des formes topographiques ayant des symétries miroirs différentes et ont révélé des nombres de pics de STS différents dans le gap de la surface de GaAs(110) selon leur site atomique. Des calculs de densité d’états électroniques et des simulations d’images STM ont été effectués, en collaboration, sur des atomes de Cr occupant des sites cationiques dans le GaAs massif et dans les cinq premières couches de la surface de GaAs(110) en utilisant la théorie de la fonctionnelle de la densité (DFT). Des accords entre les calculs théoriques et nos résultats expérimentaux nous ont permis de montrer (i) que les pics de STS mesurés sur les atomes de Cr correspondent à des pics de densité d’états électroniques provenant d’une hybridation entre les états à caractères d’orbitales d du Cr et les états à caractères d’orbitales p de leurs voisins d’atomes d’As et de Ga ; (ii) que nos mesures de STS sur les atomes de Cr dans les deux premières couches de surface sont affectés par la brisure de symétrie à la surface de GaAs(110); (iii) qu’il se produit une levée de dégénérescence de certains états induits dans le gap de GaAs(110) lorsqu’un atome de Cr passe de la première vers la deuxième couche de surface ; (iv) et que les images STM topographiques réalisées à différents signes de tension sur des atomes de Cr insérés dans les deux premières couches de la surface correspondent à des fonctions d’ondes d’états d’hybridations pd spécifiques / In this thesis, we investigate by scanning tunneling microscopy (STM) the effects of surface and coordination on the electronic properties of a transition metal atom occupying a cationic site in the GaAs(110) surface.By an in situ deposition method, we deposited Cr adatoms on cleaved GaAs(110) surfaces with coverage rates lower than a monolayer. And by applying voltage pulses close to a few target magnetic adatoms using the STM tip, we have manipulated them and substituted them with Ga atoms in the two first layers of the GaAs(110) surface. Thus obtaining magnetic atoms having different atomic environments, i.e. Cr adatoms, Cr atoms forming three bonds with three neighboring As atoms (Cr in the first layer) and Cr atoms forming four bonds with four neighboring As atoms (Cr in the second layer).To study the electronic properties of these transition atoms as a function of their position in the GaAs surface (110), we have realized on them STM imagery with different voltage bias as well as scanning tunneling spectroscopy (STS). They showed topographic forms with different mirror symmetries and revealed different numbers of STS peaks in the gap of the GaAs surface (110) according to their atomic site.By collaboration, density of states (DOS) calculations and simulations of STM images were carried out on Cr atoms occupying cationic sites in the GaAs bulk and in the five first layers of the GaAs surface (110) using the density functional theory (DFT). Agreements between the theoretical calculations and our experimental results have allowed us to show (i) that the measured STS peaks on the Cr atoms correspond to peaks of DOS resulting from an hybridization between the d states of Cr and the p states of their neighbors atoms of As and Ga ; (ii) that our STS measurements on the Cr atoms in the two first layers are affected by the symmetry breaking at the GaAs(110) surface; (iii) that a splitting of some induced states in the GaAs gap (110) occurs when a Cr atom passes from the first to the second surface layer; (iv) and that the measured topographic STM images on Cr atoms inserted in the first two layers of the surface correspond to wave functions of specific pd hybridization states

Two-dimensional numerical simulation was used to study the scaling properties of SOI p-MOSFETs. Based on the design criteria for the threshold voltage and DIBL, a set of design curves for different designs was developed. Data for subthreshold slope, SCE and threshold voltage sensitivity to silicon film thickness are also given. Results show that short-channel effects can be controlled by increasing the doping level or by thinning the silicon film thickness. The first approach is more effective for p+ gate design with high body doping, while the second approach is much more effective for n+ gate design with low body doping. Then+ gate design is more suited for the design of fully depleted (FD) devices since we need to keep the doping low to minimize the threshold adjustment implant dose and to use thin silicon films to control the SCE. The design of both p-MOSFET and Si 1-xGex p-MOSFET requires the implantation for the threshold voltage adjustment. The p+ gate design is more suited for the partially depleted (PD) or near-fully depleted device design since we need to use high doping for the threshold voltage adjustment and this results in large threshold voltage sensitivity to silicon film thickness for FD devices. The design of Si SOI p-MOSFET is done by properly adjusting the body doping. For the Si1-xGex SOI p-MOSFET large reduction in VTH requires large body doping. This increases the parasitic capacitances and slows down the device.

With increasing demand for complex and faster circuits, CMOS technologies are progressing towards the deep-submicron level. Process complexity increases dramatically, and costly techniques are to be developed to create dense field isolation and shallow junctions. Silicon-On-Insulator (SOI) may solve some of these problems. On the other hand, strained Si 1_xGex layers have been successfully grown on Si substrates and demonstrated much higher hole mobility than bulk Si. This can be used to build high-mobility p-MOSFET with a buried Si 1_xGex channel. A high mobility p-MOSFET would improve both the circuit speed and the level of integration. The purpose of the present study was to model and simulate the effective mobility (μeff) of SOI Si 1-xGex p-MOSFET, and to investigate the suitability of local mobility models provided by simulator MEDICI for studying SOI Si 1_xGex p-MOSFET. The simulation is performed by using the two-dimensional device simulation program (MEDICI). The design parameters, such as Si-cap thickness, Ge profile and back-gate bias, were also investigated. A long channel (6μ) and a short channel (0.25μ) SOI and bulk Si 1_xGex p MOSFET were used for the study. Simulation reveals good effective mobility μeff match with experimental results if Si Ge channel of p-MOSFET can simply be treated like a bulk silicon with mobility 250cm2 /Vs. Mobility models provided by MEDICI are two types: a) mobility model (SRFMOB2) that is dependent on transverse electric field only at Si/ Si02 interface, which means that the effective mobility is a function of grid spacing at Si/ Si02 interface, and b) mobility models (PRPMOB, LSMMOB and HPMOB) that are dependent on transverse electric field anywhere in the device. PRPMOB and LSMMOB produce very good μef f and are insensitive to the grid spacing. HP MOB gives slight over estimation of effective mobility μef f. Silicon cap thickness can significantly influence the effective mobility μef f. In general, the thin silicon cap have better effective mobility μef f, but it is limited by manufacturing process. Graded Si 1_:z:Ge:z: channel presents nearly 100% improvement of effective mobility μeff for p-MOSFET over its bulk counterpart. This improvement is sustained up to gate voltage of 2.5 V. Simulation also indicates that large improvement of effective mobility μef f requires higher Ge concentration at the top of SiGe channel with steep grading. The influence of back-gate bias on μeff is small, hence, SOI SiGe MOSFET is well suited to building CMOS circuits.

Es ist seit einigen Jahren bekannt, dass Elektronen unter bestimmten Bedingungen in dünne Filme eingeschlossen werden können, selbst wenn diese Filme aus Metall bestehen und auf Metall-Substrat aufgebracht werden. In Photoelektronenspektren zeigen diese Filme charakteristische diskrete Energieniveaus, und es hat sich herausgestellt, dass sie zu großen, technisch nutzbaren Effekten führen können, wie der oszillatorischen magnetischen Kopplung in modernen Festplatten-Leseköpfen. <br><br> In dieser Arbeit wird untersucht, inwieweit die der Quantisierung in zweidimensionalen Filmen zu Grunde liegenden Konzepte auf niedrigere Dimensionalität übertragbar sind. Das bedeutet, dass schrittweise von zweidimensionalen Filmen auf eindimensionale Nanostrukturen übergegangen wird. Diese Nanostrukturen sind zum einen die Terrassen auf atomar gestuften Oberflächen, aber auch Atomketten, die auf diese Terrassen aufgebracht werden, bis hin zu einer vollständigen Bedeckung mit atomar dünnen Nanostreifen. Daneben werden Selbstorganisationseffekte ausgenutzt, um zu perfekt eindimensionalen Atomanordnungen auf Oberflächen zu gelangen. <br><br> Die winkelaufgelöste Photoemission ist als Untersuchungsmethode deshalb so geeignet, weil sie das Verhalten der Elektronen in diesen Nanostrukturen in Abhängigkeit von der Raumrichtung zeigt, und unterscheidet sich darin beispielsweise von der Rastertunnelmikroskopie. Damit ist es möglich, deutliche und manchmal überraschend große Effekte der eindimensionalen Quantisierung bei verschiedenen exemplarischen Systemen zum Teil erstmals nachzuweisen. Die für zweidimensionale Filme wesentliche Rolle von Bandlücken im Substrat wird für Nanostrukturen bestätigt. Hinzu kommt jedoch eine bei zweidimensionalen Filmen nicht vorhandene Ambivalenz zwischen räumlicher Einschränkung der Elektronen in den Nanostrukturen und dem Effekt eines Übergitters aus Nanostrukturen sowie zwischen Effekten des Elektronenverhaltens in der Probe und solchen des Messprozesses. Letztere sind sehr groß und können die Photoemissionsspektren dominieren. <br><br> Abschließend wird der Effekt der verminderten Dimensionalität speziell für die d-Elektronen von Mangan untersucht, die zusätzlich starken Wechselwirkungseffekten unterliegen. Auch hierbei treten überraschende Ergebnisse zu Tage. / It has been known for several years that under certain conditions electrons can be confined within thin layers even if these layers consist of metal and are supported by a metal substrate. In photoelectron spectra, these layers show characteristic discrete energy levels and it has turned out that these lead to large effects like the oscillatory magnetic coupling technically exploited in modern hard disk reading heads. <br><br> The current work asks in how far the concepts underlying quantization in two-dimensional films can be transferred to lower dimensionality. This problem is approached by a stepwise transition from two-dimensional layers to one-dimensional nanostructures. On the one hand, these nanostructures are represented by terraces on atomically stepped surfaces, on the other hand by atom chains which are deposited onto these terraces up to complete coverage by atomically thin nanostripes. Furthermore, self organization effects are used in order to arrive at perfectly one-dimensional atomic arrangements at surfaces. <br><br> Angle-resolved photoemission is particularly suited as method of investigation because is reveals the behavior of the electrons in these nanostructures in dependence of the spacial direction which distinguishes it from, e. g., scanning tunneling microscopy. With this method intense and at times surprisingly large effects of one-dimensional quantization are observed for various exemplary systems, partly for the first time. The essential role of bandgaps in the substrate known from two-dimensional systems is confirmed for nanostructures. In addition, we reveal an ambiguity without precedent in two-dimensional layers between spacial confinement of electrons on the one side and superlattice effects on the other side as well as between effects caused by the sample and by the measurement process. The latter effects are huge and can dominate the photoelectron spectra. <br><br> Finally, the effects of reduced dimensionality are studied in particular for the d electrons of manganese which are additionally affected by strong correlation effects. Surprising results are also obtained here. <br><br>----------------------------<br> Die Links zur jeweiligen Source der im Appendix beigefügten Veröffentlichungen befinden sich auf Seite 83 des Volltextes.

Τα άμορφα υλικά είναι μια ευρεία κατηγορία υλικών με σημαντικές ιδιότητες πολλές από τις οποίες δεν απαντώνται όταν αυτά βρίσκονται στην αντίστοιχη κρυσταλλική τους φάση. Στην παρούσα εργασία μελετώνται επιλεγμένα υμένια (πάχους ~ 1μm) από μια ειδική κατηγορία άμορφων υλικών, τις χαλκογονούχες ενώσεις (chalcogenides). Ως “χαλκογενή” (chlacogens) αναφέρονται τα στοιχεία της ομάδας VIA του περιοδικού πίνακα, δηλαδή το Θείο (S), το Σελήνιο (Se) και το Τελλούριο (Te) και συνεπώς οι ενώσεις που περιέχουν ένα ή περισσότερα από αυτά τα στοιχεία μαζί με στοιχεία όπως τα As, Ge, P, Bi, Si, Sb, Ga, Ag, κλπ. σχηματίζουν τις χαλκογονούχες ενώσεις. Το γεγονός ότι το ενεργειακό χάσμα των ενώσεων αυτό εμπίπτει στην φασματική περιοχή του ορατού φωτός και του κοντινού υπερύθρου έχει ως αποτέλεσμα την εμφάνιση πλήθους φωτο-επαγόμενων (μη-θερμικών) φαινομένων όταν τα υλικά αυτά ακτινοβοληθούν με φως κατάλληλου μήκους κύματος και πυκνότητας ισχύος. Τα φωτο-επαγόμενα φαινόμενα περιλαμβάνουν αλλαγές σε δομικές, μηχανικές, χημικές, οπτικές, ηλεκτρικές κ.α. ιδιότητες. Πιο συγκεκριμένα, μέσω της μελέτης των φωτο-επαγόμενων φαινομένων παρέχεται η δυνατότητα για ελεγχόμενη μεταβολή δομικών (μικροσκοπικών) αλλά και μακροσκοπικών ιδιοτήτων του υλικού. Επομένως τα υλικά αυτά έχουν έντονο τεχνολογικό ενδιαφέρον, σε εφαρμογές όπως στην οπτική, στην μικροηλεκτρονική και στην ανάπτυξη στοιχείων αποθήκευσης πληροφορίας (οπτικές μνήμες). Στόχος της παρούσας εργασίας είναι η μελέτη και η κατανόηση σε βασικό επίπεδο των μικρο-δομικών χαρακτηριστικών, υμενίων επιλεγμένων άμορφων χαλκογονούχων ενώσεων υπό την επίδραση διαφόρων εξωτερικών ερεθισμάτων καθώς και η επίτευξη συσχετισμού μεταξύ μικροσκοπικών χαρακτηριστικών και χρήσιμων για εφαρμογές μακροσκοπικών ιδιοτήτων. Πιο συγκεκριμένα, μελετήθηκε συστηματικά η επιφανειακή ηλεκτρονιακή δομή υμενίων του συστήματος AsxSe100-x, παρασκευασμένων με θερμική εναπόθεση (thermal evaporation, TE) και εναπόθεση με παλμικό laser (pulsed laser deposition, PLD) με επιφανειακά ευαίσθητες τεχνικές όπως Φασματοσκοπία Φωτοηλεκτρονίων από Ακτίνες-x (XPS) και από Υπεριώδες (UPS). H Φασματοσκοπία Φωτοηλεκτρονίων από Ακτίνες-x (XPS) χρησιμοποιείται για τον καθορισμό της χημικής σύστασης της επιφάνειας του στερεού. Η πολλαπλότητα των χημικών καταστάσεων για ένα συγκεκριμένο είδος ατόμου υποδηλώνει την ύπαρξη μιας ποικιλίας τοπικών ατομικών διατάξεων στην επιφάνεια του υμενίου. Επομένως οι αλλαγές των ηλεκτρονιακών ιδιοτήτων στην επιφάνεια μπορούν να συσχετιστούν άμεσα με αλλαγές που αφορούν στην επιφανειακή δομή, οι οποίες προκαλούνται είτε μεταβάλλοντας διάφορες παραμέτρους όπως η σύσταση του υλικού είτε με την επιβολή κάποιου εξωτερικού ερεθίσματος όπως η θέρμανση και η ακτινοβόληση, είτε με τη φωτο-διάλυση ατόμων μετάλλου (Ag) στο εσωτερικό τους. Μεταβάλλοντας την σύσταση σε PLD υμένια AsxSe100-x και υποβάλλοντας τα σε θέρμανση, σε θερμοκρασία 150ºC (δηλαδή λίγο πιο κάτω από το Τg) οι πιο έντονες αλλαγές παρατηρήθηκαν στο ηλεκτρονικό περιβάλλον των ατόμων αρσενικού στα υμένια με ενδιάμεσες συστάσεις (As50Se50, As60Se40). Στην συνέχεια, η συμμετρική σύσταση As50Se50 μελετήθηκε διεξοδικότερα λόγω της μεγάλης ποικιλομορφίας και ετερογένειας σε νανο-κλίμακα. Τα αποτελέσματα έδειξαν ότι η ακτινοβόληση και η θέρμανση οδηγούν την δομή σε δύο διαφορετικές άμορφες καταστάσεις με διαφορετικό ποσοστό δομικών μονάδων. Το φαινόμενο είναι αντιστρεπτό και επαναλήψιμο σε διαδοχικούς κύκλους θέρμανσης και ακτινοβόλησης για τα PLD υμένια ενώ δεν ισχύει το ίδιο για τα ΤΕ υμένια. Ο προσδιορισμός του δείκτη διάθλασης με την χρήση φασματοσκοπικής ελλειψομετρίας σε PLD και ΤΕ As50Se50 υμένια, σε διαδοχικές διεγέρσεις ακτινοβόλησης και θέρμανσης, αποκάλυψε την συσχέτιση των αλλαγών στη μικροδομή των υμενίων με τις μεταβολές σε αυτή την μακροσκοπική ιδιότητα του υμενίου. Επιπλέον, εκπονήθηκε μελέτη του φωτο-επαγόμενου φαινομένου της διάχυσης και διάλυσης ατόμων μετάλλου όπως ο Ag στην δομή των υμενίων PLD και ΤΕ As50Se50 με ακτινοβόληση ακτίνων- x και ορατού φωτός (laser ενέργειας συγκρίσιμης με το ενεργειακό χάσμα του ημιαγωγού). Σκοπός ήταν η μελέτη της εξέλιξης των σχηματιζόμενων χημικών ειδών κατά τα διάφορα στάδια του φαινομένου σε αντίθεση με την έως τώρα υπάρχουσα πρακτική που εστιάζει κυρίως στον μηχανισμό της κινητικής του φαινομένου. Μετρήσεις ανάλυσης σε βάθος με XPS και SIMS έλαβαν χώρα με σκοπό την διερεύνηση του προφίλ της συγκέντρωσης του μετάλλου στο εσωτερικό του υμενίου, πριν και μετά την επαγωγή του φαινομένου. / Amorphous, are a wide category of materials with significant properties that do not occur in their respective crystalline phase. In this work, a special category of selected amorphous chalcogenide compounds (chalcogenides) in the form of thin (1μm) films, is studied experimentally. Chalcogens are the elements from Group VIA, namely Sulfur (S), selenium (Se) and tellurium (Te) and therefore compounds containing one or more of these elements together with elements such as As, Ge, P, Bi, Si, Sb, Ga, Ag, etc. form chalcogenide compounds. The fact that their energy gap is within the range of visible light and near infrared has given rise to numerous of photo-induced (non-thermal) phenomena when these materials are irradiated with light of appropriate wavelength and power density. The photo-induced effects include changes in structural, mechanical, chemical, optical, electrical, etc. properties. More specifically, through the study of photo-induced effects it is possible to control micro-structural changes and macroscopic properties of the material. Therefore these materials have a strong technological interest for applications in optics, in microelectronics and as elements in circuits for optical data storage (optical memories). The aim of this work is to study and understand at a basic level the micro-structural characteristics of chalcogenide films of selected compounds under the influence of various external stimuli as well as to achieve a correlation between microscopic characteristics and useful for applications macroscopic properties. In the present work the electronic surface structure of AsxSe100-x films prepared by thermal evaporation (TE) and by pulsed laser deposition (PLD) was studied systematically with surface sensitive techniques such as X-ray and Ultraviolet Photoelectron Spectroscopies ( XPS, UPS). X-ray photoelectron spectroscopy is used to determine the chemical composition of the surface of a solid. The multiplicity of chemical states for a specific type of atom suggests the existence of a variety of local individual arrangements on the surface of the film. Therefore, the changes of electronic properties on the surface can be directly correlated with changes on the surface structure, which are caused either by altering various parameters such as the composition of the material or by imposing an external stimulus such as annealing and irradiation, or by photo-dissolution of silver atoms (Ag) in their structure. Changing the composition of PLD AsxSe100-x films and submitting them to annealing below the Tg, the most pronounced changes occurred in the electronic environment of atoms in films with intermediate compositions (As50Se50, As60Se40). The symmetrical composition As50Se50 was chosen and studied thoroughly because of the great diversity and heterogeneity of its micro-structural units in nano-scale. The results showed that irradiation and annealing lead the film to two different amorphous states, with different percentage of structural units. The phenomenon is reversible and repeatable in successive cycles of annealing and irradiation for the PLD films while this is not true for the TE films. The determination of the refractive index using spectroscopic ellipsometry in PLD and TE As50Se50 films, in successive irradiation and annealing stimuli, revealed the correlation of the changes in the microstructure of films with the changes in this macroscopic property. Furthermore, the photo-induced diffusion and dissolution of silver (Αg) atoms in the structure of PLD and TE As50Se50 films induced by x-rays and visible light (laser energy comparable to the energy gap of semiconductor) was studied. The purpose of these experiments was to follow the chemical species formed during the various stages of the diffusion procedure with XPS in contrast to most studies so far focusing mainly on the mechanism of kinetics of the diffusion reaction. Depth profile analysis by XPS and SIMS took place in order to investigate the concentration profile of the metal atoms in depth of the films, before and after the induction of the effect.

La tesi que porta per títol "Theoretical Study of the Basicity and the Redox Properties of Heteropolyanions" ofereix informació complementària a la comunitat científica relacionada amb la química de coordinació amb metalls de transició en general, i particularment a experts en òxids metàl·lics d'elevada nuclearitat, o polioxometal·lats (POMs). Els POMs poden encapsular selectivament espècies iòniques i catalitzar força reaccions orgàniques, també són agents blanquejadors de la polpa de fusta respectuosos amb el medi ambient, funcionen com a membranes, sensors, etc. En el futur, podrien ser aplicats amb èxit en medecina ja que estan sent testats com a agents antivirals. La llista de possibles aplicacions és interminable. Sigui com sigui, molts grups estan treballant per explotar les propietats d'aquests òxids metàl·lics. Per tant, un coneixement acurat de les propietats fonamentals dels POMs és necessari si els experimentalistes volen desenvolupar noves tecnologies.La pràctica totalitat dels resultats presentats en la memòria han estat obtinguts amb mètodes de càlcul mecano-quàntics d'alt nivell. La tècnica més àmpliament utilitzada ha estat el mètode relacionat amb la teoria del funcional de la densitat. Aquesta eina, d'ús rutinari des de fa uns pocs anys, s'ha convertit en la preferida per al càlcul de sistemes de gran mida com els POMs. Els principals temes abordats en aquest treball estan relacionats amb l'estructura electrònica d'alguns heteropolianions (HPAs). Aquests es caracteritzen per posseir dos tipus estructurals d'àtoms a part dels lligands oxo: el(s) central(s) i els perifèrics. Dintre d'aquest subgrup dels POMs, s'han investigat les propietats de les dues estructures més comuns: l'anió de Keggin (XM12O40n&#61485;) i el de Wells&#61485;Dawson (X2M18O62m&#61485;), així com alguns derivats. Han estat estudiades sèries amb diferents metalls perifèrics (anomenats addenda), metalls centrals (heteroàtoms), isòmers i estructures, de manera que s'han traçat conclusions valuoses i extrapolables a altres sistemes no estudiats. Aquesta classe de POMs presenta una seqüència d'orbitals moleculars peculiar. Els seus orbitals frontera han estat analitzats detalladament per un grup ampli de compostos. S'ha posat especial èmfasi en conèixer la relació entre els orbitals metàl·lics (normalment buits) i les propietats redox dels HPAs. Un dels èxits del treball ha estat explicar de forma inequívoca i general les tendències en els potencials de reducció segons la composició química d'una espècie, així com el comportament dels electrons metàl·lics&#8213;(des)localització. Val a dir que, en la gran majoria dels casos, s'ha trobat una concordància molt bona amb les dades experimentals.El segon gran tema abordat en la tesi és la basicitat dels HPAs. En un compost tipus XxMmOyn&#61485; existeixen diverses posicions oxo, les quals no sempre són equivalents químicament. La seva basicitat pot ésser, doncs, diferent. Un estudi realitzat sobre una sèrie de compostos amb metalls mesclats ha donat escales relatives de basicitat, estimades a partir de la funció potencial electrostàtic, així com a partir d'energies de protonació. S'ha mostrat que els lligands oxo bicoordinats a metalls solen ser els més bàsics, mentre que els oxígens terminals són, generalment, els menys bàsics. Els processos de dimerització en anions de Keggin solen tenir lloc en medi àcid. Aquests passen per una protonació dels monòmers i s´han abordat en dos casos. L'objectiu era mostrar possibles mecanismes de reacció del procés.El tractament teòric dels POMs és encara en la seva etapa inicial, probablement per les dificultats intrínseques associades al càlcul d'aquestes espècies. Aquestes són, des del punt de vista computacional, molècules grans. A més, degut a que són òxids de metalls de transició, acostumen a ser anions altament carregats amb, de vegades, estats electrònics de capa oberta. Els resultats recopilats en la tesi són una prova de que el DFT ha estat hàbilment aplicat a l'estudi dels POMs. / The thesis titled "Theoretical Study of the Basicity and the Redox Properties of Heteropolyanions" offers complementary information to the scientific community concerned to coordination chemistry with transition metals in general, and particularly to experts in high-nuclearity metal oxide compounds. They are the so-called polyoxometalates (POMs). POM species can encapsulate selectively some ionic species as well as catalyse many organic reactions. They are also environmentally-friendly wood pulp bleaching agents, they work as membranes, sensors, etc. In the close future, they could be successfully applied to medicine since they were tested as antiviral agents. The full list of possible applications is endless. Be that as it may, many groups are working with the aim of exploiting the properties of these metal oxides. Thus, an accurate knowledge of their fundamental properties is necessary if experimentalists are to develop new POM-related technologies.The great majority of the results presented in the thesis were obtained by means of high-performance quantum-mechanics computational methods. The most amply utilised tool in this study was the method derived from the density function theory. This tool, only recently utilised routinely, has arisen as the preferred one for computing molecular systems of large size as POMs are. The main topics studied in this work are related to the electronic structure of some heteropolyanions (HPAs). They are characterised by possessing two structural types of atoms, a part from oxo ligands: the central and the peripheral atoms. Within this subset of POMs, the two most common structures were studied: the Keggin (XM12O40n&#61485;) and the Wells&#61485;Dawson (X2M18O62m&#61485;) anions, and some of their derivatives, as well. Large series of compounds with varying peripheral atoms (also known as addenda), central metals (heteroatoms), isomers and frameworks, so that we traced valuable conclusions, extrapolable to other systems not studied here. This class of POMs features a particular molecular orbitals sequence. Their frontier orbitals were carefully analysed for a wide set of compounds. We especially stressed the connection between the metal orbitals (normally empty) and the redox properties of HPAs. One of the successes of the work was to explain unequivocally and in a general way the trends in the reduction potentials depending on the chemical composition of a given species, as well as the behaviour of metal electrons&#8213;(de)localisation. It is worth noting that, in virtually all cases, we found a fair accordance of our results with experimental data.The second great topic studied in the thesis is the basicity of HPAs. In a compound like XxMmOyn&#61485; there exist different oxo positions which are not always chemically equivalent. Their basicity might be, then, different. The study carried out for a series of mixed-addenda molecules gives relative basicity scales, estimated from the electrostatic potential function and from protonation energies. It has been showed that the oxo ligands coordinated to two metals are more basic than terminal position, which in general are the least basic. The dimerisation processes in Keggin anions take place, normally, in acidic media. They occur after protonation of the monomers and were investigated for two cases. The goal was to show possible reaction mechanisms for the process.The theoretical treatment of POMs is still in its initial steps, probably due to the intrinsic difficulties associated to the calculation of such species. They are, from a computational point of view, large molecules. In addition, because they are transition-metal oxides, they are highly charged anions that, sometimes, display open-shell electronic states. The compilation of results of the thesis is a proof that the DFT have been skilfully applpied to the study of POMs.

SILVA, Katiane Pereira da. Propriedades estruturais e eletrônicas do cristal L-fenilalanina ácido nítrico e estudo vibracional sob condições extremas de pressão e temperatura. 2014. 119 f. Tese (Doutorado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2014. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2015-04-10T21:12:54Z No. of bitstreams: 1 2014_tese_kpsilva.pdf: 5357878 bytes, checksum: 251018043a6c9107f6c8d1df9df190fd (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2015-04-10T21:13:24Z (GMT) No. of bitstreams: 1 2014_tese_kpsilva.pdf: 5357878 bytes, checksum: 251018043a6c9107f6c8d1df9df190fd (MD5) / Made available in DSpace on 2015-04-10T21:13:24Z (GMT). No. of bitstreams: 1 2014_tese_kpsilva.pdf: 5357878 bytes, checksum: 251018043a6c9107f6c8d1df9df190fd (MD5) Previous issue date: 2014 / The L-phenylalanine is an essential amino acid that takes part of several bio chemicals processes related to the production of some human proteins and enzymes. This essential amino acid is converted into the L-tyrosine amino acid by means of the L-phenylalanine hydroxilase. Amino acids are interesting materials for non linear optics (NLO) applications as they contain a proton donor carboxylic acid (COOH) group and a proton acceptor amine (NH2) group. In the present work, a systematic investigation has been carried out on L-phenylalanine nitric acid [C9H11NO2.C9H11NO2+.NO3-] (LPN) single crystal obtained by slow evaporation at room temperature. This work shows studies performed in a pure atomistic way by computation simulation, on the electronic and optical properties, using method of density functional theory. The crystal was characterized by single crystal X-ray diffraction, Fourier Transform infrared (FT-IR) and Fourier Transform Raman (FT-Raman) analysis. The results of the X-ray diffraction data were analyzed by the Rietveld method. Single crystal data refinement of the LPN crystal shows that this compound grows with a monoclinic structure belonging to the P21 space group with two molecules per unit cell. The calculated lattice parameter is in good agreement with the experimental results. The Mulliken and Hirschfield charges show the zwiterrionic state of the LPN crystal in the DFT converged crystals. The band gap of LPN crystal is indirect and its energy is ~3.55 eV. The 2p orbitals are the largest contributors to the density of states, suggesting that the crystal behaves like an n-type wide gap insulator. We have characterized the LPN crystal at room temperature by means of the FT-IR in the spectral range between 400 cm-1 to 4000 cm-1 and by means of FT-Raman in the spectral range between 50 cm-1 to 3500 cm-1. There was no Raman band observed in the spectral interval between 1700 cm-1 to 2700 cm-1. For wavenumber greater than 3100 cm-1, there was no Raman band. In the range between 2850 cm-1and 3100 cm-1, it observed stretching modes associated with C-H and C-H2 units. Finally, single-crystal samples of LPN were studied by Raman spectroscopy in a diamond-anvil cell up to pressures of ~ 8.0 GPa. From the analysis of the results we observed that the crystal undergoes a phase transition at about 0.6 GPa. The transition is accompanied by the disappearance of a phonon in the external mode region of the spectrum and by changes of both the wavenumber of NH3+ rocking and CH2 rocking vibrations. / A L-fenilalanina é um aminoácido essencial que participa de diversos processos bioquímicos relacionados à constituição de diversas proteínas e enzimas do corpo humano. Este aminoácido essencial através da enzima L-fenilalanina hidroxilase, é convertido no aminoácido L-tirosina. Os aminoácidos são materiais interessantes para aplicações ópticas não lineares (ONL) uma vez que contêm um próton doador do grupo carboxílico (COOH) e um próton receptor do grupo amina (NH2). No presente trabalho, uma investigação sistemática foi realizada para o cristal de L-fenilalanina ácido nítrico [C9H11NO2.C9H11NO2+.NO3-] (LFN) obtido pelo método de evaporação lenta à temperatura ambiente. Neste trabalho, estudamos de forma inteiramente atomística através de simulação computacional as propriedades eletrônicas e ópticas utilizando o método da teoria do funcional da densidade. O cristal foi caracterizado por difração de raios-X, pelas técnicas vibracionais de Transformada de Fourier no infravermelho (FT-IR) e no Raman (FT-Raman). Os resultados de difração de raios-X foram analisados pelo método de Rietveld. Os resultados do refinamento para o cristal LFN mostram que este composto cristaliza-se na estrutura monoclínica pertecente ao grupo especial P21 com duas moléculas por célula unitária. Os parâmetros de rede calculados apresentaram boa concordância com os resultados experimentais. As cargas Mulliken e Hirschfield mostram que o estado zwitteriônico do cristal LFN estão bem convergidas. A energia do gap do cristal LFN (indireto) é aproximadamente 3,55 eV. Os orbitais 2p são os maiores contribuintes para a densidade de estados, o que sugere que o cristal se comporta como um isolante. Apresentamos resultados de caracterização do cristal de LFN à temperatura ambiente, através das técnicas utilizadas de espectroscopia de absorção por transformada de Fourier na região do infravermelho (FT-IR) no intervalo espectral entre 400 cm-1 e 4000 cm-1 e espectroscopia Raman por transformada de Fourier (FT-Raman) no intervalo espectral entre 50 cm-1 e 3500 cm-1. Nenhuma banda Raman foi observada no intervalo espectral entre 1700 cm-1 e 2700 cm-1. Para o intervalo acima de 3100 cm-1 nenhuma banda Raman foi observada, o que garante que o cristal tratado está na forma anidra. Destaca-se, por exemplo, a região entre 2850 cm-1 e 3100 cm-1, onde é esperado serem observados modos vibracionais do tipo estiramento das ligações C-H e do CH2. Finalmente, para o cristal de LFN foram investigados por espectroscopia Raman em uma célula do tipo bigorna de diamantes desde a pressão ambiente até ~ 8,0 GPa. Nas análises dos resultados de altas pressões observamos que o cristal sofre uma transição de fase em torno 0,6 GPa. A transição é acompanhada pelo desaparecimento de um fônon na região dos modos externos do espectro Raman e por alterações das bandas eferentes a vibrações do tipo rocking do NH3+ e CH2.

COSTA, Diego Rabelo da. Transportes e confinamento em monocamada e bicamada de nanoestruturas de grafeno com diferentes bordas, interfaces e potenciais. 2014. 201 f. Tese (Doutorado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2014. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2015-06-01T22:18:12Z No. of bitstreams: 1 2014_tese_drcosta.pdf: 54910487 bytes, checksum: 82b386bac8259edaa10f6d5ff314bd42 (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2015-06-01T22:19:16Z (GMT) No. of bitstreams: 1 2014_tese_drcosta.pdf: 54910487 bytes, checksum: 82b386bac8259edaa10f6d5ff314bd42 (MD5) / Made available in DSpace on 2015-06-01T22:19:16Z (GMT). No. of bitstreams: 1 2014_tese_drcosta.pdf: 54910487 bytes, checksum: 82b386bac8259edaa10f6d5ff314bd42 (MD5) Previous issue date: 2014 / Graphene, a two-dimensional lattice of carbon atoms, has been widely studied during the past few years. The interest in this material is not only due to its possible future technological applications, but also because it provides the possibility to probe interesting phenomena predicted by quantum field theories, ranging from Klein tunneling and other quasi-relativistic effects to the existence of new types of electron degrees of freedom, namely, the pseudo-spin, and the existence of two inequivalent electronic valleys in the vicinity of the gapless points of its energy spectrum. Several of the exotic properties observed in graphene originate from the fact that within the low energy approximation for the tight-binding Hamiltonian of graphene, electrons behave as massless Dirac fermions, with a linear energy dispersion. Just like in single layer graphene, the low-energy eletronic spectrum in bilayer graphene is gapless, but in this case it is dominated by the parabolic dispersion. Nevertheless, one interesting feature is shared by both monolayer and bilayer graphene: the valley degree of freedom. In this thesis, we theoretically investigate: (i) the dynamic properties in mono and bilayer graphene, performing a systematic study of wave packet scattering in different interface shapes, edges and potentials; and furthermore (ii) the energy levels of confined systems in graphene in the presence or absence of external magnetic and electric fields. In the first part of the work, we use the tight-binding approach to study the scattering of a Gaussian wave packet on monolayer graphene edges (armchair and zigzag) in the presence of real and pseudo (strain induced) magnetic fields and also calculate the transmission probabilities of a Gaussian wave packet through a quantum point contact defined by electrostatic gates in bilayer graphene. These numerical calculations are based on the solution of the time-dependent Schrödinger equation for the tight-binding model Hamiltonian, using the Split-operator technique. Our theory allows us to investigate scattering in reciprocal space, and depending on the type of graphene edge we observe scattering within the same valley, or between different valleys. In the presence of an external magnetic field, the well known skipping orbits are observed. However, our results demonstrate that in the case of a pseudo-magnetic field, induced by non-uniform strain, the scattering by an armchair edge results in a non-propagating edge state. We propose also a very efficient valley filtering through a quantum point contact system defined by electrostatic gates in bilayer graphene. For the suggested bilayer system, we investigate how to improve the efficiency of the system as a valley filter by varying parameters, such as length, width and amplitude of the applied potential. In the second part of the thesis, we present a systematic study of the energy spectra of graphene quantum rings having different geometries and edge types, in the presence of a perpendicular magnetic field. We discuss which features obtained through a simplified Dirac model can be recovered when the eigenstates of graphene quantum rings are compared with the tight-binding results. Furthermore, we also investigate the confined states in two different hybrid monolayer - bilayer systems, identifying dot-localized states and edge states for the suggested bilayer confinement structures, as well as we will study the behavior of the energy levels as a function of dot size and under an applied external magnetic field. Finally, using the four-band continuum Dirac model, we also derive a general expression for the infinite-mass boundary condition in bilayer graphene in order to apply this boundary condition to calculate analytically the confined states and the corresponding wave functions in a bilayer graphene quantum dot in the absence and presence of a perpendicular magnetic field. Our analytic results exhibit good agreement when compared with the tight-binding ones. / Grafeno, uma rede bidimensional de átomos de carbono, tem sido amplamente estudado durante os últimos anos. O interesse por este material não é apenas devido às suas possíveis aplicações tecnológicas futuras, mas também porque oferece a possibilidade de investigar fenômenos interessantes previstos pelas teorias quânticas de campo, que vão desde o tunelamento de Klein e outros efeitos quasi-relativísticos à existência de novos tipos de graus de liberdade do elétron, ou seja, o pseudo-spin, e a existência de dois vales eletrônicos não-equivalentes na vizinhança dos pontos sem gap do seu espectro de energia. Várias das propriedades exóticas observadas no grafeno originam-se do facto de que dentro da aproximação de baixas energias para o Hamiltoniano tight-binding do grafeno, elétrons se comportam como férmions de Dirac sem massa, com uma dispersão de energia linear. Assim como no caso de uma monocamada de grafeno, o espectro eletrônico de baixas energias para uma bicamada de grafeno é sem gap, mas, neste caso, é dominado pela dispersão parabólica. No entanto, uma característica interessante é compartilhada por ambas monocamada e bicamada de grafeno: o grau de liberdade de vale. Nesta tese, nós investigamos teoricamente: (i) as propriedades dinâmicas em mono e bicamadas de grafeno, realizando um estudo sistemático do espalhamento de pacotes de onda em diferentes formas de interfaces, bordas e potenciais; e, além disso, (ii) os níveis de energia de sistemas confinados no grafeno na presença ou ausência de campos magnéticos e elétricos externos. Na primeira parte do trabalho, nós utilizamos a abordagem tight-binding para estudar o espalhamento de um pacote de onda Gaussiano nas bordas de uma monocamada de grafeno (armchair e zigzag) na presença de campos magnéticos reais e pseudo-magnéticos (induzidos por tensão) e também calculamos as probabilidades de transmissão de um pacote de onda Gaussiano através de um contato de ponto quântico definido por potenciais eletrostáticos em bicamadas de grafeno. Estes cálculos numéricos são baseados na solução da equação de Schrödinger dependente do tempo para o Hamiltoniano do modelo tight-binding, usando a técnica Split-operator. Nossa teoria permite investigar espalhamento no espaço recíproco, e dependendo do tipo de borda do grafeno, nós observamos espalhamento dentro do mesmo vale, ou entre diferentes vales. Na presença de um campo magnético externo, as bem conhecidas órbitas skipping orbits são observadas. No entanto, nossos resultados demonstram que, no caso de um campo pseudo-magnético induzido por uma tensão não-uniforme, o espalhamento por uma borba armchair resulta em um estado de borda não-propagante. Nós também propomos um sistema de filtragem de vales muito eficiente através de um sistema de contato de ponto quântico definido por portas eletrostáticas em uma bicamada de grafeno. Para o sistema de bicamadas sugerido, nós investigamos a forma de melhorar a eficiência do sistema como um filtro de vales por diferentes parâmetros, como comprimento, largura e amplitude do potencial aplicado. Na segunda parte da tese, nós apresentamos um estudo sistemático dos espectros de energia de anéis quânticos de grafeno com diferentes geometrias e tipos de borda, na presença de um campo magnético perpendicular. Nós discutimos quais características obtidas por meio de um modelo simplificado de Dirac podem ser recuperadas quando os auto-estados de anéis quânticos de grafeno são comparados com os resultados do modelo tight-binding. Além disso, nós também investigamos os estados confinados em dois sistemas híbridos diferentes de monocamada - bicamada, identificando estados localizados dentro do ponto e estados de borda para as estruturas de confinamento em bicamadas sugeridas, assim como vamos estudar o comportamento dos níveis de energia em função do tamanho do ponto e sob um campo magnético externo aplicado. Finalmente, usando o modelo contínuo de Dirac de quatro bandas, nós também derivamos uma expressão geral para a condição de contorno de massa infinita em bicamada de grafeno, a fim de aplicar essa condição de contorno para calcular analiticamente os estados confinados e as correspondentes funções de onda em um ponto quântico em uma bicamada de grafeno na ausência e na presença de um campo magnético perpendicular. Nossos resultados analíticos apresentam boa concordância quando comparados com os resultados tight-binding.

Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico / Neste trabalho, Ã proposto um dispositivo de controle de corrente que explora a fase adquirida por um portador de carga quando este tunela atravÃs de uma barreira de potencial no grafeno no regime balÃstico sem a necessidade da presenÃa de um gap no espectro de energias. O sistema atua como um interferÃmetro baseado em um anel quÃntico de grafeno com bordas armchair, onde a diferenÃa de fase entre as funÃÃes de onda para elÃtrons que tomam diferentes caminhos pode ser controlada atravÃs da intensidade das barreiras de potencial nos braÃos do anel. Variando os parÃmetros das barreiras a interferÃncia pode tornar-se completamente destrutiva. Ã demonstrado como esse efeito de interferÃncia pode ser utilizado para o desenvolvimento de portas lÃgicas simples baseadas em grafeno. / In this work, we propose a current switch device that exploits the phase acquired by a charge carrier as it tunnels through a potential barrier in graphene in the ballistic regime without the need of the presence of a gap in the spectrum. The system acts as an interferometer based on an armchair graphene quantum ring, where the phase difference between interfering electronic wave functions for each path can be controlled by tuning the height of a potential barrier in the ring arms. By varying the parameters of the potential barriers the interference can become completely destructive. We demonstrate how this interference effect can be used for developing a simple graphene-based logic gate.