The field of organic semiconductors considerably gained research interest due to promising applications in flexible, large-area, lightweight and semitransparent electronic devices, such as light-emitting diodes, solar cells, or transistors. The working mechanism of such devices depends on the combination of different neat or blended organic films, whose physical properties substantially differ from those of inorganic semiconductors. Weak intermolecular electronic coupling and large energetic disorder result in a thermally activated charge carrier hopping between localized electronic states. Therefore, many processes in organic devices are determined by properties of single molecules. The major goal of this thesis is to disclose relationships between electronic properties of organic thin films and molecular parameters, helping to provide specific design rules for new molecules. In the first part of this thesis, the impact of molecular quadrupole moments on the transport energies of charge carriers is investigated by photoelectron spectroscopy. The results reveal for a variety of planar small molecules that charge-quadrupole interactions along the pi-pi-stacking geometry induce large energy changes with molecular orientation at surfaces and interfaces of crystalline films. Furthermore, these electrostatic interactions enable a continuous tuning of energy levels in crystalline intermixed blends by more than 1 eV. In blends exhibiting separated phases, quadrupole moments induce electrostatic gradients from the interface to the bulk phase. These two effects are exploited in organic solar cells consisting of a ternary blend of two intermixed donors blended with one acceptor. By changing the mixing ratio of the two donors, the open-circuit voltage can be continuously tuned. Additionally, the dissociation barrier of electron-hole pairs at the interface can be varied, reflecting in a change in photocurrent. In the second part, molecular n-doping is investigated, facing the particular issue of air sensitivity. The analysis of two air stable precursor molecules of n-dopants reveals very good doping properties after their thermal evaporation, partly even better than for a reference air sensitive dopant. For high doping concentrations, temperature-dependent conductivity measurements show that the thermal activation energy of many compounds can be described by an empirical function of two molecular parameters, the relaxation energy of matrix anions and the Coulomb binding energy of integer charge transfer complexes (ICTCs) between matrix anions and dopant cations. The investigation of the density of states indicates that charge transport at high doping concentrations predominantly occurs by a rearrangement between different ICTC configurations and is limited by their energetic disorder, which can be reduced substantially by adding electron withdrawing side groups to the matrix molecules. The exposure of several n-doped semiconductors to air reveals that the air stability increases with larger ionization energies of ICTCs. This effect is attributed to an universal trap introduced upon air exposure. Its energy is estimated to be 3.9 eV, setting a general limit for air stable n-doping. / Organische Halbleiter bieten vielversprechende Anwendungsmöglichkeiten in ultraleichten, flexiblen, großflächigen und semitransparenten elektronischen Bauteilen wie beispielsweise in Leuchtdioden, Solarzellen oder Transistoren. Die Funktionsweise solcher Bauteile basiert auf der Kombination verschiedener organischer Moleküle in dünnen Schichten, deren physikalische Eigenschaften sich stark von herkömmlichen anorganischen Halbleitern unterscheiden. Die schwache elektronische Kopplung zwischen einzelnen Molekülen und die große energetische Unordnung in organischen Halbleitern bewirken einen temperaturaktivierten Transport von Ladungsträgern zwischen lokalisierten elektronischen Zuständen. Daher werden viele Prozesse in organischen Halbleiterbauelementen von molekularen Eigenschaften bestimmt. Das Hauptziel dieser Dissertation ist es, verschiedene elektronische Eigenschaften dünner organischer Filme mit molekularen Parametern in Verbindung zu bringen, was als Grundlage für die gezielte Entwicklung neuer Moleküle dienen soll. Im ersten Teil dieser Arbeit wird mittels Photoelektronenspektroskopie der Einfluss molekularer Quadrupolmomente auf die Transportenergien von Ladungsträgern untersucht. Für eine große Anzahl verschiedener planarer Moleküle zeigt sich, dass die Wechselwirkung von Ladungen mit Quadrupolmomenten entlang der pi-pi-Stapelrichtung große Veränderungen der Energieniveaus an der Oberfläche und der Grenzfläche von kristallinen Filmen bewirkt, beispielsweise wenn sich die Molekülorientierung ändert. Dieser elektrostatische Effekt ermöglicht es, die Energieniveaus in einer homogen durchmischten Schicht zweier Molekülarten kontinuierlich über eine Größenordnung von mehr als 1 eV durchzustimmen. In Mischungen mit einer Phasentrennung können molekulare Quadrupolmomente einen elektrostatischen Gradienten an der Grenzfläche zwischen den Phasen ausbilden. Diese beiden Effekte werden in Solarzellen ausgenutzt, die aus einer Mischung von zwei Donatormolekülen und einem Akzeptormolekül bestehen. Durch Variation des Mischverhältnisses der zwei Donatoren lässt sich die Leerlaufspannung kontunierlich anpassen. Zusätzlich lässt sich die Energiebarriere für die Ladungsträgertrennung an der Grenzfläche reduzieren, was zu einem höheren Photostrom führt. Im zweiten Teil wird molekulare n-Dotierung untersucht, bei der das spezielle Problem der Luftsensitivität berücksichtigt werden muss. Zwei luftstabile Ausgangsmoleküle von n-Dotanden weisen nach ihrer thermischen Verdampfung sehr gute Dotiereigenschaften auf, welche für ein Molekül sogar besser als bei entsprechenden luftsensitiven Referenzdotanden sind. Temperaturabhängige Leitfähigkeitsmessungen zeigen, dass die thermische Aktivierungsenergie bei hohen Dotierkonzentrationen durch eine empirische Funktion von zwei molekularen Parametern beschrieben werden kann, welche die Relaxationsenergie von Anionen des Matrixmoleküls und die Coulombbindungsenergie des Ionenpaars aus Matrix- und Dotandenmolekül sind. Die Untersuchung der Zustandsdichte dieser hochdotierten Halbleiter deutet darauf hin, dass sich der Ladungstransport durch eine Umbesetzung dieser Ionenpaare beschreiben lässt. Der Transport ist dabei durch die energetische Unordnung der Ionenpaare limitiert, welche sich allerdings durch das Hinzufügen von elektronenziehenden Seitengruppen an die Matrixmoleküle deutlich reduzieren lässt. Der Kontakt verschiedener n-dotierter Halbleiter mit Luft zeigt, dass sich die Luftstabilität dieser mit größerer Ionisationsenergie der Anionen des Matrixmaterials verbessert. Diese Beobachtung wird dadurch erklärt, dass durch den Kontakt mit Luft ein universeller Fallenzustand mit der Energie von 3.9 eV entsteht. Dieser setzt eine allgemeine Grenze für luftstabile n-Dotierung.

We demonstrate a remarkable property of metallic Fermi liquids: the transverse conductivity assumes a universal value in the quasi-static (ω → 0) limit for wavevectors q in the regime l −1 mfp q pF, where lmfp is the mean free path and pF is the Fermi momentum. This value is (e2/h)RFS/q in two dimensions (2D), where RFS measures the local radius of curvature of the Fermi surface (FS) in momentum space. Even more surprisingly, we find that U(1) spin liquids with a spinon FS have the same universal transverse conductivity. This means such spin liquids behave effectively as metals in this regime, even though they appear insulating in standard transport experiments. Moreover, we show that transverse current fluctuations result in a universal low-frequency magnetic noise that can be directly probed by a spin qubit, such as a nitrogen-vacancy (NV) center in diamond, placed at a distance z above of the 2D metal or spin liquid. Specifically the magnetic noise is given by CωPFS/z, where PFS is the perimeter of the FS in momentum space and C is a combination of fundamental constants of nature. Therefore these observables are controlled purely by the geometry of the FS and are independent of kinematic details of the quasi-particles, such as their effective mass and interactions. This behavior can be used as a new technique to measure the size of the FS of metals and as a smoking gun probe to pinpoint the presence of the elusive spinon FS in two-dimensional systems. We estimate that this universal regime is within reach of current NV center spectroscopic techniques for several spinon FS candidate materials.

No description available.

Esta tese compõe-se de contribuições à física das propriedades eletrônicas das heteroestruturas semicondutoras. São investigadas propriedades eletrônicas das duas hetero­estruturas básicas: o poço quântico e a super-rede. Considera-se o poço quântico dopado com impurezas rasas e estudam-se as suas propriedades eletrônicas nos regimes de poço fraca e altamente dopado. No caso de baixa densidade de impurezas é feita uma simulação Monte Carlo. É utilizado um modelo semi-clássico de band de impureza. A interação elétron-elétron é incluída de forma exata e são calculadas as seguintes propriedades do estado fundamental à temperatura zero: densidade de estados de uma partícula, distribuição de carga, energia de Fermi e distribuição do campo elétrico sobre os doadores neutros, todas em função do grau de compensação, da densidade de impurezas e da largura do poço. É observada uma. grande dependência com a compensação. Os resultados são explicados à luz da competição entre os efeitos de desordem e confinamento. É observada a ocorrência de Coulomb Gap característico de sistemas bidimensionais. Mostra-se que a. distribuição de carga possui largura e constante de decaimento determinados independentemente pela compensação e pela concentração de impurezas, respectivamente. Tais resultados são importantes para a caracterização de poços quânticos puros. No limite altamente dopado parte-se de um modelo light-binding desordenado e calcula­se a densidade de estados de uma partícula formada devido ao overlapping entre os estados localizados; utiliza-se o método de Matsubara e Toyosawa. para a obtenção da média sobre configurações. Discutem-se os efeitos da desordem diagonal introduzida pelo potencial de confinamento os quais são comparados com os da. desordem não-diagonal. São apresentados resultados para a densidade de estados em função do grau de confinamento e concentração de impurezas para poços e fios quânticos. Sâo estudadas as propriedades eletrônicas das super-redes sob campo magnético transversal à direção de crescimento. Mostra-se que esta configuração é ideal para o estudo das características básicas das super-redes: a estrutura de mini bandas e o tunelamento. Calculam-se as sub-bandas de condução utilizando a teoria de massa efetiva de muitas bandas. Introduz-se a idéia de massa efetiva renormalizada para barreiras semicondutoras. Comparam-se os resultados com dados experimentais de ressonância ciclotrônica. A ótima concordância obtida demonstra a grande importância e a utilidade do conceito de massa efetiva renormalizada para barreiras semicondutoras, que é uma maneira nova e simples de lidar com as soluções evanescentes. / This thesis is composed of contributions to the theory of electronic properties of semicon­ ductor heterostructures. Electronic properties of the basic two heterostructures (quantum well and superlattice) are investigated. A quantum well doped with shallow impurities is considered and its electronic properties are studied in both limits: lightly and heavily doped. In the first case a Monte Carlo simula­ tion technique is used. A semiclassical impurity band model is used . The electron-electron interaction is included exactly and properties of the ground state such as the density of single particle states, the charge distribution, the Fermi energy and the electric field di tribution on the neutra/ donors are calculated, all of them as a function of the degree of compensation, the impurity concentration and the width of the well. A great dependency with the compensation is observed. The results are explained by the competition between the effects of disorder and confinement. The existence of a Coulomb Gap is verified . The charge distribution is shown to have a width and decay rate given by the degree of compensation and impurity concentration, in this order. Such results are important to characterize pure quantum wells. On the heavily doped limit, a disordered tight-binding model is used and the density of states that is formed by the overlapping of localized states is calculated by using the method of Matsubara and Toyosawa for the configuration average. The diagonal disord er effect introduced by the confinement potential is considered and compared to that of the non­ diagonal disorder. Results of the density of states as a function of the degree of confinement and impurity concentration for quantum wells and wires are presented. The electronic propertie s of a superlattice under a magnetic field which is transversal to the growth direction are studied. Jt is shown that this configuration is id eal for the study of the basic characteristics of the superlattices: the subband structure and the tunneling. The conduction subbands are calculated by using the theory of many bands effective mass. The idea of renormalized effective mass for barriers is introduced. The obtained level spacings are compared with cyclotron resonance experimental data (infrared absorption). The good agreement obtained demonstrates the importance and usefulness of the renormalized effective mass, which is a new and simple way to handle evanescent waves.

Les travaux de recherche actuels menés dans le domaine des supercondensateurs s’orientent vers l’augmentation des densités d’énergie, notamment via le développement de supercondensateurs hybrides "oxydes de métaux de transition / carbones activés". Dans ce contexte, les présents travaux avaient pour objectif d’évaluer les propriétés d’oxydes de cobalt nanométriques en tant que matériaux d’électrode positive pour supercondensateur hybride.Ces oxydes de cobalt, de structure spinelle, sont préparés par précipitation de nitrate de cobalt en milieu basique (T < 90 °C). Ils possèdent une formule chimique du type HxLiyCo3-δO4•zH2O et présentent une bonne conductivité électronique grâce à la présence d’ions H+, Li+ et Co4+. Les analyses par DRX, ATG, RMN et les mesures de conductivité électroniques ont mis en évidence une réorganisation de la structure spinelle de ces matériaux sous l’effet d’un traitement thermique, conduisant à une augmentation du rapport Co4+/Co3+ ainsi qu’à une amélioration des propriétés de transport électrique. L’association d’une conductivité électronique élevée et d’une forte surface spécifique confère à ces oxydes des performances prometteuses en tant que matériaux d’électrode.L’étude des propriétés électrochimiques a montré la présence de deux modes de stockage des charges, l’un électrostatique (double couche électrochimique) et l’autre faradique via l’oxydation et la réduction du cobalt. Elle a également permis de déterminer la signature électrochimique de ces oxydes (capacité, fenêtre de potentiels), prérequis indispensable à leur intégration dans une cellule complète. Finalement, un supercondensateur hybride "oxyde de cobalt / carbone activé" a été assemblé et équilibré, donnant lieu à des performances attractives (61,6 F/g sur 1,60 V). / Investigations on supercapacitors are focusing on increasing energy densities, in particular with the development of hybrid supercapacitors "metal oxides / activated carbons". In this field, the present work aims at evaluating nanometric cobalt oxides as positive electrode material for hybrid supercapacitors.These oxides, with spinel structure, are synthesized by precipitation of cobalt nitrate in a basic medium (T < 90 °C). They exhibit formulae such as HxLiyCo3-δO4•zH2O and good electronic properties thanks to the presence of H+, Li+ and Co4+ ions. XRD, TGA, NMR analysis as well as electronic measurements have highlighted a structural reorganization of the spinel structure under thermal treatment, resulting in increase of the Co4+/Co3+ ratio and an enhancement of the electronic transport properties. The high electronic conductivity together with a huge specific surface area imparts these oxides promising performances as electrode material.The study of the electrochemical properties underlines two charge storage mechanisms, one electrostatic (electrochemical double layer) and the other one faradic through the oxidation and the reduction of cobalt. The electrochemical signature (capacity, potential window) of these oxides was also determined in order to develop a complete cell. Finally, a hybrid supercapacitor "cobalt oxide / activated carbon" was assembled and balanced, revealing attractive performances (61,6 F/g over 1,60 V).

The main focus of this thesis is in understanding the role of phase separation and microstructure in determining the physical properties of manganites. We also aim to be able to tune certain material properties using appropriate control mechanisms. For this, an understanding of the local electronic properties of manganites is essential. We thus set out to study the local electronic states in manganites using a highly sensitive probe: the scanning tunneling microscope (STM). The chapter 1 of the thesis gives an introduction to manganites, and of how manganites are susceptible to various perturbations due to closely lying ground states and an intricate interplay of their charge, spin and lattice degrees of freedom. Chapter 2 of this thesis gives a detailed account of various experimental methods used in the current investigation. In particular, we describe the design and fabrication of a variable temperature ultra-high vacuum scanning tunneling microscope (UHV-STM) which was used to carry out spatially resolved measurements on various manganite systems. This chapter also describes sample fabrication techniques by which strain and microstructure of thin films can be controlled. Other characterization techiniques, such as tranport and magnetotransport measurements, are also described in detail. Chapter 3 presents our investigation of the role of microstructure and phase separation on the DOS and local electronic properties of manganite thin films. We describe various spatially resolved STM/STS measurements carried out on La0.67Sr0.33MnO3 and La0.67Ca0.33MnO3 films having different micrsotructure and varying degrees of phase separation. We also present a theoretical model used in interpreting STS data to account for finite temperature effects and explain the existing data in this context. We use this model to gain insight into the behaviour of the DOS at EF near the MIT where thermal smearing can often give rise to misleading inferences. Chapter 4 presents our investigation on the density of states in a typical charge ordered manganite system, Pr1-xCaxMnO3. We describe STS measurements carried out on this system to study the occurrence and evolution of the charge ordering (CO) gap as a function if temperature as well as tunneling current. We report the observation of destabilization of the CO gap using tunnel current injection by an STM tip. Chapter 5 presents our investigation into the controlled and localized “nanoscale” phase separation in Pr1-xCaxMnO3 (PCMO) using an STM tip. The investigations were carried out on PCMO single crystal and PCMO epitaxial films. Our results raise the possibility of nano-fabrication of metallic nanoislands in a CO matrix using an STM tip. We demonstrate some examples of this and also raise the relevance of intrinsic phase separation in this context. We show that the “melting” of CO using tunnel current injection by an STM tip is analogous to the magnetic field-induced melting of CO on a microscopic scale. Chapter 6 summarizes the important results of this thesis work and suggests the scope for future experiments.

SILVA, Mauricélio Bezerra da. Propriedades estruturais, eletrônicas e ópticas dos cristais anidros das bases pirimidínicas: simulações na teoria do funcional da densidade. 2016. 143 f. Dissertação (Mestrado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2016. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2016-03-18T16:29:43Z No. of bitstreams: 1 2016_dis_mbsilva.pdf: 5690802 bytes, checksum: 94fbc87b68d0551214a7a67d6328e488 (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2016-03-18T16:47:55Z (GMT) No. of bitstreams: 1 2016_dis_mbsilva.pdf: 5690802 bytes, checksum: 94fbc87b68d0551214a7a67d6328e488 (MD5) / Made available in DSpace on 2016-03-18T16:47:55Z (GMT). No. of bitstreams: 1 2016_dis_mbsilva.pdf: 5690802 bytes, checksum: 94fbc87b68d0551214a7a67d6328e488 (MD5) Previous issue date: 2016 / Uracil (U), thymine (T) and cytosine (C) are nitrogenous bases of the pyrimidine type. These along with the other two bases purines adenine (A) and guanine (G), form the essential basis of the ribonucleic acid molecule (RNA) and acid deoxyribonucleic (DNA), which contains the genetic information used by living cells. DNA and RNA crystals have enough attractive semiconductor characteristics in the field of organic electronics, and for this reason are strong candidates in the manufacture of molecular nanodevices. However, advancements in this area are still premature. This work presents the structural, electronic and optical of the anhydrous crystals of pyrimidine nucleotide bases. The theoretical results were obtained after calculations based on density functional theory (DFT), with an energy cut of 830 eV, using the approximations of local density (LDA) and generalized gradient (GGA), this last one including empirical corrections to dispersive interactions (PBE + TS) available at CASTEP package. The computational results were then compared with the crystals experiments of optical absorption and UV absorption. Theoretical studies applied to the crystals cytosine, thymine, adenine and guanine are already available in the literature. However, it is still missing a description using a more sophisticated functional as was used in this work. The absorption values obtained for the uracil, thymine and cytosine crystals shows that these have, respectively, indirect, direct and indirect gaps with values of 4.03 eV, 3.80 eV and 4.20 eV. As expected, the theoretical results exhibited energy gaps lower than the experimental values: 3.45 eV (U), 3.47 eV (C) and 3.50 eV (T). Effective mass calculations confirm literature data that the bases are generally wide gap semiconductor. Finally, the results obtained by DFT suggest a reasonable degree of optical anisotropy for the absorption and complex dielectric function, especially in uracil and thymine. As expected, the theoretical results exhibited energy gaps lower than the experimental values: 3.45 eV (U), 3.47 eV (C) and 3.50 eV. (T). Effective mass calculations confirm the literature data that the bases are semiconductor with wide gaps. Finally, the results obtained by DFT suggest a reasonable degree of optical anisotropy for the absorption and complex dielectric function, especially in the uracil and thymine cases. / Uracila (U), timina (T) e citosina (C) são bases nitrogenadas do tipo pirimidínicas. Essas juntamente com as outras duas bases púricas adenina (A) e guanina (G), formam as bases essenciais da molécula do ácido ribonucleico (ARN) e ácido desoxirribonucleico (ADN), que contém as informações genéticas usadas pelas células vivas. Os cristais de ADN e ARN apresentam características semicondutoras bastantes atrativas na área de eletrônica orgânica, e por este motivo são fortes candidatos na fabricação de nanodispositivos moleculares. No entanto, os avanços nessa área ainda são prematuros. Nesse trabalho são apresentadas as propriedades estruturais, eletrônicas e ópticas dos cristais anidros das bases nucleotídicas pirimidínicas. Os resultados teóricos foram obtidos após cálculos baseados na teoria do funcional da densidade DFT, sob uma energia de corte de 830 eV, utilizando a aproximações da densidade local (LDA) e do gradiente generalizado (GGA), nessa última foi incluindo correções empíricas para interações dispersivas (PBE+TS) disponíveis no pacote CASTEP. Os resultados computacionais foram comparados então com os experimentos de absorção ótica e de absorção UV para os cristais. Estudos teóricos aplicados a cristais de citosina, timina, adenina e guanina já estão disponíveis na literatura. No entanto, faltava ainda uma descrição utilizando funcionais mais sofisticado como o adotado neste trabalho. Os valores de absorção apresentados para os cristais de uracila, timina e citosina mostra que estes possuem, respectivamente, gaps indireto, direto e indireto com valores obtidos de 4,03 eV, 3,80 eV e 4,20 eV. Como esperado, os resultados GGA+TS mostraram gaps de energia menores dos que os valores experimentais: 3,45 eV (U), 3,47 eV (C) e 3,50 eV (T). Cálculos de massa efetiva confirmam os dados da literatura de que as bases, em geral, são semicondutores de gaps largos. Por fim, os resultados obtidos por DFT sugerem um razoável grau de anisotropia óptica para a absorção e função dielétrica complexa, especialmente na uracila e timina.

Dans ce travail, nous illustrons l’avantage de coupler les techniques de photoémission résolue en angle (ARPES) et de microscopie/spectroscopie tunnel (STM/STS) pour l'étude des propriétés électroniques et structurales des surfaces/interfaces nanostructurées. Dans la première partie, nous présentons l’étude du supraconducteur non conventionnel Eu(Fe0.86Ir0.14)2As2. Ce composé, dopé en Ir de manière optimale, possède une phase supraconductrice réentrante (Tc=22K) qui coexiste avec un ordre ferromagnétique (TM=18K). Nous présentons une étude par ARPES de la structure de bande dans le plan et hors plan ainsi que de la surface de Fermi. Les bandes associées aux états 3d du fer, responsables de la supraconductivité, sont modifiées en présence de la substitution en Ir, mais la topologie de la surface de Fermi est conservée. Le gap supraconducteur est mesuré à 5.5 meV, supérieur à la valeur estimée par la théorie BCS pour une température Tc=22K. La disparition du gap au-dessus de T=10K coïncide avec la phase résistive induite par l’ordre magnétique des moments Eu2+. Les modifications de la surface de Fermi dans le composé substitué indiquent clairement un dopage effectif en trou par rapport au composé parent. La seconde partie est consacrée à l’étude de la croissance, des mécanismes de polymérisation et des conséquences sur les propriétés électroniques de nanostructures moléculaires. Celles-ci sont élaborées par évaporation sous vide des molécules 1,4-dibromobenzène (dBB) et 1,4-diiodobenzène (dIB) sur les surfaces de Cu(110), Cu(111) et Cu(775) en utilisant la réaction catalytique de Ullmann. Nous avons étudié l’influence du type d’halogène et de substrat sur la réaction de polymérisation ainsi que les conséquences sur les propriétés électroniques. En particulier, nous mettons en évidence par des mesures STM et NEXAFS (mesures effectuées à l’aide du rayonnement synchrotron) un mécanisme original de croissance des polymères sur la surface de Cu(775) qui s’accompagne d’une restructuration à l’échelle nanométrique sous la forme d’un « step-bunching ». Celui-ci conduit à la formation de polymères de grande longueur et parfaitement ordonnés à grande échelle. En combinant les mesures ARPES et STS, nous mettons en évidence une évolution du gap HOMO-LUMO caractérisant les chaînes de poly(para)phénylène ainsi formées avec le type d’halogène impliqué dans la réaction catalytique et la géométrie du substrat. Nous montrons ainsi que si le caractère métallique du polymère élaboré sur le Cu(110) trouve son origine dans sa forte interaction avec le substrat, celle-ci diminue fortement lorsque la synthèse a lieu sur les surfaces de Cu(111) et de Cu(775) conduisant à retrouver un comportement semi-conducteur caractérisé par un gap HOMO-LUMO évalué à 2.2 eV / In this work, we highlight the advantage of coupling techniques such as angle resolved photoemission (ARPES), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) for investigating the electronic and structural properties of nanostructured surfaces/interfaces. In the first part, the electronic structure of the reentrant superconductor Eu(Fe0.86Ir0.14)2As2 (Tc=22K) with coexisting ferromagnetic order (TM=18K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface of Eu(Fe0.86Ir0.14)2As2. The near EF Fe 3d-derived band dispersions near the high-symmetry points show changes due to Ir substitution, but the Fermi surface topology is preserved. The superconducting gap measured at the lowest temperature T=5K (equal to 5.5meV) is beyond the weak-coupling BCS estimation for Tc=22 K. The gap gets closed at a temperature T=10K and this is attributed to the resistive phase which sets in at TM=18K due to the Eu2+ derived magnetic order. The modifications of the FS with Ir substitution clearly indicate an effective hole doping with respect to the parent compound. In the second part, we provide insight into the growth and the electronic properties of 1,4-dibromobenzene (dBB) and 1,4-diiodobenzene on Cu(110), Cu(111) and Cu(775) surfaces. The influence of the substrate is reported in this study: using a copper vicinal surface as support for on-surface Ullmann coupling leads to highly ordered, quasi-infinite polymer growth. Such a new growth mechanism, stemming from vicinal surface reconstructions is observed. The structural composition of different phases obtained in the study is discussed as a concomitant effect of the halogen and the surface geometry. Various interactions such as substrate/molecule, substrate/halogen, molecule/halogen as well as molecule/molecule interactions that took place into the polymerization mechanism are considered for analyzing the electronic properties of the different interfaces. We measured an 1.15 eV HOMO-LUMO gap in dBB/Cu(110), whereas the gap is found to be slightly higher than 1.5eV in dBB/Cu(111) and equal to 2.2eV in dBB/Cu(775). Such a metal-semiconductor transition is shown to occur when the halogen is switched (Br vs I) or the surface geometry is changed (Cu(110) vs Cu(775)) in agreement with the concomitant reduction of the polymer/substrate interaction

Uracila (U), timina (T) e citosina (C) sÃo bases nitrogenadas do tipo pirimidÃnicas. Essas juntamente com as outras duas bases pÃricas adenina (A) e guanina (G), formam as bases essenciais da molÃcula do Ãcido ribonucleico (ARN) e Ãcido desoxirribonucleico (ADN), que contÃm as informaÃÃes genÃticas usadas pelas cÃlulas vivas. Os cristais de ADN e ARN apresentam caracterÃsticas semicondutoras bastantes atrativas na Ãrea de eletrÃnica orgÃnica, e por este motivo sÃo fortes candidatos na fabricaÃÃo de nanodispositivos moleculares. No entanto, os avanÃos nessa Ãrea ainda sÃo prematuros. Nesse trabalho sÃo apresentadas as propriedades estruturais, eletrÃnicas e Ãpticas dos cristais anidros das bases nucleotÃdicas pirimidÃnicas. Os resultados teÃricos foram obtidos apÃs cÃlculos baseados na teoria do funcional da densidade DFT, sob uma energia de corte de 830 eV, utilizando a aproximaÃÃes da densidade local (LDA) e do gradiente generalizado (GGA), nessa Ãltima foi incluindo correÃÃes empÃricas para interaÃÃes dispersivas (PBE+TS) disponÃveis no pacote CASTEP. Os resultados computacionais foram comparados entÃo com os experimentos de absorÃÃo Ãtica e de absorÃÃo UV para os cristais. Estudos teÃricos aplicados a cristais de citosina, timina, adenina e guanina jà estÃo disponÃveis na literatura. No entanto, faltava ainda uma descriÃÃo utilizando funcionais mais sofisticado como o adotado neste trabalho. Os valores de absorÃÃo apresentados para os cristais de uracila, timina e citosina mostra que estes possuem, respectivamente, gaps indireto, direto e indireto com valores obtidos de 4,03 eV, 3,80 eV e 4,20 eV. Como esperado, os resultados GGA+TS mostraram gaps de energia menores dos que os valores experimentais: 3,45 eV (U), 3,47 eV (C) e 3,50 eV (T). CÃlculos de massa efetiva confirmam os dados da literatura de que as bases, em geral, sÃo semicondutores de gaps largos. Por fim, os resultados obtidos por DFT sugerem um razoÃvel grau de anisotropia Ãptica para a absorÃÃo e funÃÃo dielÃtrica complexa, especialmente na uracila e timina / Uracil (U), thymine (T) and cytosine (C) are nitrogenous bases of the pyrimidine type. These along with the other two bases purines adenine (A) and guanine (G), form the essential basis of the ribonucleic acid molecule (RNA) and acid deoxyribonucleic (DNA), which contains the genetic information used by living cells. DNA and RNA crystals have enough attractive semiconductor characteristics in the field of organic electronics, and for this reason are strong candidates in the manufacture of molecular nanodevices. However, advancements in this area are still premature. This work presents the structural, electronic and optical of the anhydrous crystals of pyrimidine nucleotide bases. The theoretical results were obtained after calculations based on density functional theory (DFT), with an energy cut of 830 eV, using the approximations of local density (LDA) and generalized gradient (GGA), this last one including empirical corrections to dispersive interactions (PBE + TS) available at CASTEP package. The computational results were then compared with the crystals experiments of optical absorption and UV absorption. Theoretical studies applied to the crystals cytosine, thymine, adenine and guanine are already available in the literature. However, it is still missing a description using a more sophisticated functional as was used in this work. The absorption values obtained for the uracil, thymine and cytosine crystals shows that these have, respectively, indirect, direct and indirect gaps with values of 4.03 eV, 3.80 eV and 4.20 eV. As expected, the theoretical results exhibited energy gaps lower than the experimental values: 3.45 eV (U), 3.47 eV (C) and 3.50 eV (T). Effective mass calculations confirm literature data that the bases are generally wide gap semiconductor. Finally, the results obtained by DFT suggest a reasonable degree of optical anisotropy for the absorption and complex dielectric function, especially in uracil and thymine. As expected, the theoretical results exhibited energy gaps lower than the experimental values: 3.45 eV (U), 3.47 eV (C) and 3.50 eV. (T). Effective mass calculations confirm the literature data that the bases are semiconductor with wide gaps. Finally, the results obtained by DFT suggest a reasonable degree of optical anisotropy for the absorption and complex dielectric function, especially in the uracil and thymine cases.

Conselho Nacional de Pesquisa e Desenvolvimento Científico e Tecnológico - CNPq / Bi12GeO20 (BGO) belongs to the family of sillenite crystals BMO, where M = Ge, Si, Ti. These compounds exhibit remarkable photorefractive e ect and therefore are used in the development of information and image storage technologies, holography, ampli cation of luminous signals and dynamic interferometry. One of the strategies used to enhance the properties of interest of these sillenites is doping. The defects can create photorefractive centers in the matrix, introducing energy levels within the gap, in uencing the electronic and optical properties of the selenites. Experimental work reported a curious behavior when using transition metal ions (TMI) as dopants. Most of the TMIs, including Cr ions, are allocated at the high symmetry site Ge4+, with the exception of Cu2+ which enters into the matrix at the low symmetry site of Bi3+. This is a surprising fact due to the di erence between ionic radii and charge states of the dopants and the substitution ion Ge4+. In this work the LAPW method, based on the DFT theory and implemented in the WIEN2k program, was used to study the electronic, structural and energetic properties of pure BGO and doped BGO with chromium ions. In the study of doped cases, Cr ions were inserted at the substitutional sites of Ge4+ and Bi3+ The calculations were performed for neutral and charged systems. The approximations for correlation and exchange e ects were made through GGA-PBE and mBJ potentials. Were performed calculations of lattice parameter optimization, relaxation of atomic positions, state density, Bader charge and formation energies of defects. It was possible to nd the lattice parameter, and the band gap energy os the BGO pure, to analyse the way how the neighbourhood of the substitutional site behaves with the presence of the defect and nd the states that populate the valence and conduction bands of the studies cases. These data were taking into account to measure the ions valence. The results of the modeling showed that Cr prefers to accommodate in the BGO matrix with Cr3+/4+ valences. The preferential accommodation site of Cr3+ is Bi3+, which didn't meet with what has been reported experimentally in the literature. / O Bi12GeO20 (BGO) pertence a fam lia de cristais silenitas do tipo BMO, onde M = Ge, Si, Ti. Tais compostos apresentam um not avel efeito fotorrefrativo e por isso s~ao utilizados no desenvolvimento de tecnologias de armazenamento de informa c~oes e imagens, hologra a, amplia c~ao de sinais luminosos e interferometria din^amica. Uma das estrat egias utilizadas para potencializar as propriedades de interesse dessas silenitas e a dopagem. Os defeitos podem criar centros fotorrefrativos na matriz, introduzindo n veis de energias dentro do gap e in uenciar nas propriedades eletr^onicas e opticas das silenitas. Trabalhos experimentais relataram um comportamento curioso ao se utilizar ons de metais de transi c~ao (TMI) como dopantes. A maior parte dos TMIs, incluindo os ons de Cr, s~ao alocados no s tio de alta simetria Ge4+, com exce c~ao do Cu2+ que se insere na matriz no s tio de baixa simetria do Bi3+. Esse e um fato surpreendente devido a diferen ca entre raios i^onicos e estados de carga dos dopantes e do on substitucional Ge4+. Neste trabalho foi utilizado o m etodo LAPW, baseado na teoria DFT e implementado no programa WIEN2k, para estudar as propriedades eletr^onicas, estruturais e energ eticas do BGO puro e dopado com ons de cromo. No estudo de casos dopados, os ons de Cr foram inseridos nos s tios substitucionais Ge4+ e Bi3+. Os c alculos foram executados para sistemas neutros e carregados. As aproxima c~oes para os efeitos de correla c~ao e troca foram feitas atrav es do funcional GGA-PBE e do potencial mBJ. Foram realizados c alculos de otimiza c~ao de par^ametro de rede, relaxa c~ao de posi c~oes at^omicas, densidade de estados, carga de Bader e energias de forma c~ao de defeito. Foi poss vel encontrar o par^ametro de rede, a energia de gap do BGO puro, analisar a forma como a vizinhan ca do s tio substitucional se comporta com a presen ca do defeito e encontrar os estados que populam as bandas de val^encia e condu c~ao dos casos estudados. Esses dados foram levados em conta para aferir a val^encia dos ons. Os resultados das modelagens mostraram que o Cr prefere se acomodar na matriz do BGO com val^encias Cr3+/4+. O s tio de acomoda c~ao preferencial do Cr3+ e o Bi3+, o que vai de encontro ao que foi relatado experimentalmente na literatura. / São Cristóvão, SE