My dissertation research focuses on the investigation of the transport and magnetic properties of transition metal and rare earth doped oxides, particularly SnO2 and HfO2 thin films. Cr- and Fe-doped SnO2 films were deposited on Al2O3 substrates by pulsed-laser deposition. Xray- diffraction patterns (XRD) show that the films have rutile structure and grow epitaxially along the (101) plane. The diffraction peaks of Cr-doped samples exhibit a systematic shift toward higher angles with increasing Cr concentration. This indicates that Cr dissolves in SnO2. On the other hand, there is no obvious shift of the diffraction peaks of the Fe-doped samples. The magnetization curves indicate that the Cr-doped SnO2 films are paramagnetic at 300 and 5 K. The Fe-doped SnO2 samples exhibit ferromagnetic behaviour at 300 and 5 K. Zero-field-cooled and field-cooled curves indicate super paramagnetic behavior above the blocking temperature of 100 K, suggesting that it is possible that there are ferromagnetic particles in the Fe-doped films. It was found that a Sn0.98Cr0.02O2 film became ferromagnetic at room temperature after annealing in H2. We have calculated the activation energy and found it decreasing with the annealing, which is explained by the increased oxygen vacancies/defects due to the H2 treatment of the films. The ferromagnetism may be associated with the presence of oxygen vacancies although AMR was not observed in the samples. Pure HfO2 and Gd-doped HfO2 thin films have been grown on different single crystal substrates by pulsed laser deposition. XRD patterns show that the pure HfO2 thin films are of single monoclinic phase. Gd-doped HfO2 films have the same XRD patterns except that their diffraction peaks have a shift toward lower angles, which indicates that Gd dissolves in HfO2. Transmission electron microscopy images show a columnar growth of the films. Very weak ferromagnetism is observed in pure and Gd-doped HfO2 films on different substrates at 300 and 5 K, which is attributed to either impure target materials or signals from the substrates. The magnetic properties do not change significantly with post deposition annealing of the HfO2 films.

The emergence of semiconducting nanowires as the new building blocks for photovoltaic (PV) devices has drawn considerable attention because of the great potential of achieving high efficiency and low cost. In special, nanowires with a coaxial structure, namely, core-shell structures have demonstrated significant advantages over other device configurations in terms of radial charge collection and cost reduction. In this dissertation, several core-shell nanowire structures, including ZnO/ZnSe, ZnO/ZnS, and CdSe/ZnTe, have been synthesized and the photovoltaic devices processed from a ZnO/ZnS core-shell nanowire array and a single CdSe/ZnTe core-shell nanowire have been demonstrated. By combining the chemical vapor deposition and pulsed laser deposition (PLD) techniques, type-II heterojunction ZnO/ZnSe and ZnO/ZnS core-shell nanowire array were synthesized on indium-tin-oxide substrates. Their structures and optical properties have been investigated in detail, which revealed that, despite highly mismatched interfaces between the core and shell, both systems exhibited an epitaxial growth relationship. The quenching in photoluminescence but enhancement in photocurrent with faster response upon coating the core with the shell provides the evidence that the charge separation and collection in the type II core-shell nanowire is greatly improved. This demonstration brings much greater flexibility in designing next generation PV devices in terms of material selection and device operation mechanisms for achieving their maximum energy conversion efficiencies at a low cost and in an environmentally friendly manner. In order to achieve a high quality interface in the core-shell nanowire, CdSe and ZnTe, which have close lattice parameters and thermal expansion coefficients, were chosen to fabricate nanowire solar cells. ZnTe and CdSe nanowires were first synthesized by thermal evaporation and the shells were subsequently deposited by PLD. ZnTe/CdSe nanowires represented an inhomogeneous coating while the CdSe/ZnTe core-shell exhibited a conformal coating with obvious ZnTe eptilayer. The final PV device based on an individual CdSe/ZnTe nanowire demonstrated an efficiency of ~1.7%. In addition, a controllable synthesis of CdSe nanowire array on muscovite mica substrate was presented, providing the possibility to harvest hybrid energies in an all-inorganic nanowire array.

Neste trabalho são apresentados os resultados da caracterização dosimétrica de dois diodos especiais de silício, resistentes a danos de radiação, crescidos pelo método epitaxial com vistas a sua aplicação na monitoração em tempo real de feixes de fótons de qualidades de radiodiagnóstico convencional, mamografia e tomografia computadorizada, no intervalo de tensão de 28 kV a 150 kV. Os dispositivos utilizados, um submetido à pré-dose de 200 kGy de raios gama do 60Co no Centro de Tecnologia das Radiações (CTR) do IPENCNEN/ SP, e outro sem qualquer irradiação prévia, foram processados na Universidade de Hamburgo a partir de uma camada epitaxial com 50 μm de espessura. Apenas para comparação, um diodo de Si crescido por fusão zonal padrão foi também estudado. As irradiações foram realizadas no Laboratório de Calibração de Instrumentos (LCI) do IPEN/CNEN-SP, onde está instalado um gerador de radiação X, Pantak-Seifert, Isovolt 160 HS, cujas qualidades de radiação foram verificadas por câmaras de ionização padronizadas. Os diodos foram ligados a um eletrômetro Keithley 6517B em modo fotovoltaico, com a distância do ponto focal do gerador aos diodos mantida em 1 m. Os principais parâmetros dosimétricos das amostras foram avaliados de acordo com a norma IEC61674. Os coeficientes de calibração dos diodos em termos do kerma no ar também foram determinados. Os diodos apresentaram excelente estabilidade de resposta em curto prazo para as qualidades estudadas, com coeficientes de variação em corrente equivalentes e não superiores a 0,3%. O comportamento das fotocorrentes em função da taxa de dose foi linear para os três dispositivos no intervalo de 0,8 a 77,2 mGy/min. As curvas carga-dose obtidas pela integração dos sinais de corrente tornaram evidente a ausência de dependência energética para feixes de mamografia e de radiodiagnóstico até 70 kV. O diodo epitaxial sem pré-dose apresentou maior sensibilidade em corrente e em carga em relação aos demais, com queda neste parâmetro de 8% após receber dose acumulada de 49 Gy. Até este limite de dose, as correntes de fuga dos dispositivos mantiveram-se estáveis em cerca de 0,4 pA ao longo das irradiações, sendo menores por um fator até 104 em relação às correntes em condição de irradiação. A variação da resposta direcional de ambos diodos para o intervalo de ± 5° foi inferior a 0,1 % e seus coeficientes de calibração para os feixes estudados foram determinados a partir dos padrões de referência do LCI. As alterações das características elétricas das amostras em função de danos de radiação foram também estudadas e não revelaram alteração significativa para tensão de polarização nula. Com base nos resultados obtidos até o presente e considerando as recomendações da norma IEC 61674, pode-se afirmar que diodos epitaxiais sem pré-dose e com pré-dose podem ser empregados de forma confiável na dosimetria de feixes de radiação eletromagnética para imagens médicas até o limite de dose acumulada de 10 Gy e acima de 206 kGy, respectivamente. / In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200 kGy from 60Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratório de Calibração de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at 1m from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 104 higher than the lowest photocurrents measured. The directional response of both diodes was 0.1% within an angle range of ± 5°. Based on these results, one can conclude that the unirradiated and pre-irradiated EPI diodes can be used as a reliable alternative choice to relative medical imaging photon dosimetry within 10 Gy and 206 kGy of accumulated dose, respectively.

Ce travail est consacré à l’étude de la diffraction d’atomes rapides (d’énergie cinétiquede l’ordre du keV) en incidence rasante (angles d’incidence ~ 1°) le long ou proche d’unedirection principale d’une surface cristalline. Cette géométrie en incidence rasante permet de(i) récolter, en quelques secondes, la totalité du cliché de diffraction sur un détecteur sensible enposition ; (ii) préserver la cohérence de l’onde de matière en réduisant les sources de décohérencecomme l’excitation électronique et l’agitation thermique. La grande sensibilité des atomes àla forme de la densité électronique de surface (partie répulsive) et au puits attractif de Vander Waals révèle les résonances de Fano et démontre que l’atome voyage, piégé au-dessus de lasurface, de façon cohérente, sur une distance de 0.2μm. Il est également montré que la diffractiond’atomes rapides est une technique robuste pour suivre la dynamique de croissance de semiconducteurs(GaAs) par épitaxie (reconstructions, transitions de phase). Enfin, l’observationde la diffraction sur une feuille de graphène déposé sur 6H-SiC(0001) suggère l’utilisation desatomes rapides comme outil de diagnostic pour le suivi et la caractérisation en temps réel dela croissance du graphène dont les propriétés exceptionnelles dépendent beaucoup des défautsde surface. / This work was devoted to the study of fast atom diffraction (energies in the keV range)at grazing incidence angles (~ 1°) along or close to a low indexed direction of crystalline surfaces.This specific scattering geometry bears two advantages : (i) the diffraction pattern as a wholeis collected within seconds on a position sensitive detector ; (ii) the low energy associated to themotion normal to the surface quenches decoherence due to electronic excitations and stronglyreduces decoherence due to thermal vibrations. The high sensitivity of probe atoms to thesurface electron density (repulsive part) and to the Van der Waals attractive well reveals Fanoresonances where the trapped atoms preserve their coherence over distances as long as 0.2μm.As a complement to these fundamental studies, fast atom diffraction has been proved to be arobust mean to probe the dynamics of epitaxial growth of semiconductors (GaAs). Finally, workperformed on monolayer graphene grown on 6H-SiC(0001) suggest the possibility to use fastatoms to monitor graphene growth in real time, a key process to measure the level of alterationof the intrinsic graphene electronic structure.

Neste trabalho são apresentados os resultados da caracterização dosimétrica de dois diodos especiais de silício, resistentes a danos de radiação, crescidos pelo método epitaxial com vistas a sua aplicação na monitoração em tempo real de feixes de fótons de qualidades de radiodiagnóstico convencional, mamografia e tomografia computadorizada, no intervalo de tensão de 28 kV a 150 kV. Os dispositivos utilizados, um submetido à pré-dose de 200 kGy de raios gama do 60Co no Centro de Tecnologia das Radiações (CTR) do IPENCNEN/ SP, e outro sem qualquer irradiação prévia, foram processados na Universidade de Hamburgo a partir de uma camada epitaxial com 50 μm de espessura. Apenas para comparação, um diodo de Si crescido por fusão zonal padrão foi também estudado. As irradiações foram realizadas no Laboratório de Calibração de Instrumentos (LCI) do IPEN/CNEN-SP, onde está instalado um gerador de radiação X, Pantak-Seifert, Isovolt 160 HS, cujas qualidades de radiação foram verificadas por câmaras de ionização padronizadas. Os diodos foram ligados a um eletrômetro Keithley 6517B em modo fotovoltaico, com a distância do ponto focal do gerador aos diodos mantida em 1 m. Os principais parâmetros dosimétricos das amostras foram avaliados de acordo com a norma IEC61674. Os coeficientes de calibração dos diodos em termos do kerma no ar também foram determinados. Os diodos apresentaram excelente estabilidade de resposta em curto prazo para as qualidades estudadas, com coeficientes de variação em corrente equivalentes e não superiores a 0,3%. O comportamento das fotocorrentes em função da taxa de dose foi linear para os três dispositivos no intervalo de 0,8 a 77,2 mGy/min. As curvas carga-dose obtidas pela integração dos sinais de corrente tornaram evidente a ausência de dependência energética para feixes de mamografia e de radiodiagnóstico até 70 kV. O diodo epitaxial sem pré-dose apresentou maior sensibilidade em corrente e em carga em relação aos demais, com queda neste parâmetro de 8% após receber dose acumulada de 49 Gy. Até este limite de dose, as correntes de fuga dos dispositivos mantiveram-se estáveis em cerca de 0,4 pA ao longo das irradiações, sendo menores por um fator até 104 em relação às correntes em condição de irradiação. A variação da resposta direcional de ambos diodos para o intervalo de ± 5° foi inferior a 0,1 % e seus coeficientes de calibração para os feixes estudados foram determinados a partir dos padrões de referência do LCI. As alterações das características elétricas das amostras em função de danos de radiação foram também estudadas e não revelaram alteração significativa para tensão de polarização nula. Com base nos resultados obtidos até o presente e considerando as recomendações da norma IEC 61674, pode-se afirmar que diodos epitaxiais sem pré-dose e com pré-dose podem ser empregados de forma confiável na dosimetria de feixes de radiação eletromagnética para imagens médicas até o limite de dose acumulada de 10 Gy e acima de 206 kGy, respectivamente. / In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200 kGy from 60Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratório de Calibração de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at 1m from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 104 higher than the lowest photocurrents measured. The directional response of both diodes was 0.1% within an angle range of ± 5°. Based on these results, one can conclude that the unirradiated and pre-irradiated EPI diodes can be used as a reliable alternative choice to relative medical imaging photon dosimetry within 10 Gy and 206 kGy of accumulated dose, respectively.

This dissertation is related to the understanding of catalytic reactions of metal oxides. For several decades, the surfaces and bulk of materials have been probed to determine additional properties that relate to photocatalytic applications. This investigation furthers these efforts by the (a) modification of a metal oxide surface to isolate known influences of chemical properties and (b) proposing and utilizing a novel methodology for attribution of photocatalytic activity to a discernable influence. For the first effort, by effectively utilizing a known technique for a new application on a metal oxide, such isolations can be made despite unfavorable states. For the second effort, a reduction in the influence of surface states for metal oxides is effectively performed, providing the isolation of influences originating from the bulk. The challenge with such a proposal is verifying such bulk states have been adequately isolated as external influences would obviously distort any conclusions. Thus, techniques to both create such bulk states and eliminate unwanted combinations thereof are additionally required and must be provided for. Lastly, a determination of the photocatalytic activity is made to these states and results are provided.

This dissertation study describes the development of novel heteroepitaxial growth of 3C-SiC layers by chemical vapor deposition (CVD). It was hypothesized that chloride addition to the "traditional" propane-silane-hydrogen precursors system will enhance the deposition growth rate and improve the material quality via reduced defect density. Thermodynamic equilibrium calculations were performed to obtain a criterion for which chloride specie to select for experimentation. This included the chlorocarbons, chlorosilanes, and hydrogen chloride (HCl) chloride containing groups. This study revealed no difference in the most dominant species present in the equilibrium composition mixture between the groups considered. Therefore, HCl was the chloride specie selected to test the hypothesis. CVD computerized fluid dynamic simulations were developed to predict the velocity, temperature and concentration profiles along the reactor. These simulations were performed using COMSOL Multiphysics and results are presented. The development of a high-temperature (1300 °C -1390°C) 3C-SiC growth process resulted in deposition rates up to ~38 µm/h. This is the highest value reported in the literature to date for 3C-SiC heteroepitaxy. XRD FWHM values obtained varied from 220 to 1160 arcsec depending of the process growth rate or film thickness. These values are superior or comparable to those reported in the literature. It was concluded from this study that at high deposition temperatures HCl addition to the precursor chemistry had the most significant impact on the epitaxial layer growth rate. Low-temperature (1000-1250°C) 3C-SiC growth experiments evidenced that the highest deposition rate that could be attained was ~2.5 µm/h. The best quality layer achieved in this study had a FWHM of 278 arcsec; which is comparable to values reported in the literature and to films grown at higher deposition temperatures in this study. It was concluded from this work that at lower deposition temperatures the HCl addition was more beneficial for the film quality by enhancing the surface. Surface roughness values for films grown with HCl additive were 10 times lower than for films grown without HCl. Characterization of the epitaxial layers was carried out via Nomarski optical microscopy, FTIR, SEM, AFM, XRD and XPS.

L’objectif de cette thèse était d’étudier les mécanismes responsables de la luminescence des ions lanthanides dans des polymères de coordination. Pour cela, des séries d’alliages moléculaires à base d’acide 4 carboxyphénylboronique ont été synthétisées, en faisant varier les proportions relatives des ions lanthanides. Les produits synthétisés ont été étudiés dans la perspective de leur application dans les domaines de la lutte anti-contrefaçon et des thermomètres moléculaires. D’autre part, de nouveaux systèmes utilisant d’autres dérivés d’acide boronique ont été synthétisés. Une nouvelle structure cristalline a été obtenue à base de l’acide 2-carboxyphénylboronique. La seconde partie de cette thèse a porté sur la synthèse et la caractérisation de poudres microcristallines de type coeur-coquille. Il s’agit de la première micro-structuration de polymères de coordination réalisée à l’échelle micrométrique. Les poudres synthétisées ont été caractérisées par microscopies électroniques à balayage, à transmission et par analyses EDS. Leurs propriétés optiques ont été comparées avec celles des alliages moléculaires. Les résultats obtenus ont mis en évidence l'intérêt de la micro-structuration de ces poudres concernant les transferts d'énergie intermétalliques. Cette technique de synthèse basée sur la croissance épitaxiale, est rendue possible par les propriétés chimiques similaires des terres rares. Nos travaux ont montré que lorsque les constantes thermodynamiques et\ou cinétiques le permettent, la phase cristalline de la coquille présente la structure cristalline du cœur même lorsque le composé constituant la coquille cristallise dans une autre phase lorsqu'il est synthétisé seul. / The aim of this thesis was to study the luminescence mechanisms of lanthanide ions in coordination polymers. Series of molecular alloys (hetero-lanthanide compounds in which lanthanide ions are randomly distributed) based on 4-carboxyphenylboronic acid were synthesized, by varying the relative contents of the lanthanide ions. The synthesized products have been studied from the perspective of their application in the fields of anti-counterfeiting and molecular thermometers. On the other hand, new systems using other boronic acid derivatives have been synthesized. A new crystal structure was obtained based on 2-carboxyphenylboronic acid. The second part of this thesis focused on the synthesis and characterization of core-shell microcrystalline powders. This is the first time that micro-structuration of a coordination polymer is achieved at the micrometric scale. The synthesized powders were characterized by scanning electron microscopy, transmission electron microscopy and EDS analyses. Their optical properties have been compared with those of the corresponding molecular alloys. The obtained results highlighted the interest of the micro-structuration concerning intermetallic energy transfers. This strategy of synthesis based on epitaxial growth, is possible because of lanthanide similar chemical properties. This work demonstrates that in the case where the thermodynamic and\or kinetic constants allow it, the shell crystallizes according to the same crystal structure than the core even if its crystal structure is different when it is synthesized alone.

acase@tulane.edu

This publication-based thesis represents a contribution to the active research field of ultrafast structural dynamics in laser-excited nanostructures. The investigation of such dynamics is mandatory for the understanding of the various physical processes on microscopic scales in complex materials which have great potentials for advances in many technological applications. I theoretically and experimentally examine the coherent, incoherent and anharmonic lattice dynamics of epitaxial metal-insulator heterostructures on timescales ranging from femtoseconds up to nanoseconds. To infer information on the transient dynamics in the photoexcited crystal lattices experimental techniques using ultrashort optical and x-ray pulses are employed. The experimental setups include table-top sources as well as large-scale facilities such as synchrotron sources. At the core of my work lies the development of a linear-chain model to simulate and analyze the photoexcited atomic-scale dynamics. The calculated strain fields are then used to simulate the optical and x-ray response of the considered thin films and multilayers in order to relate the experimental signatures to particular structural processes. This way one obtains insight into the rich lattice dynamics exhibiting coherent transport of vibrational energy from local excitations via delocalized phonon modes of the samples. The complex deformations in tailored multilayers are identified to give rise to highly nonlinear x-ray diffraction responses due to transient interference effects. The understanding of such effects and the ability to precisely calculate those are exploited for the design of novel ultrafast x-ray optics. In particular, I present several Phonon Bragg Switch concepts to efficiently generate ultrashort x-ray pulses for time-resolved structural investigations. By extension of the numerical models to include incoherent phonon propagation and anharmonic lattice potentials I present a new view on the fundamental research topics of nanoscale thermal transport and anharmonic phonon-phonon interactions such as nonlinear sound propagation and phonon damping. The former issue is exemplified by the time-resolved heat conduction from thin SrRuO3 films into a SrTiO3 substrate which exhibits an unexpectedly slow heat conductivity. Furthermore, I discuss various experiments which can be well reproduced by the versatile numerical models and thus evidence strong lattice anharmonicities in the perovskite oxide SrTiO3. The thesis also presents several advances of experimental techniques such as time-resolved phonon spectroscopy with optical and x-ray photons as well as concepts for the implementation of x-ray diffraction setups at standard synchrotron beamlines with largely improved time-resolution for investigations of ultrafast structural processes. This work forms the basis for ongoing research topics in complex oxide materials including electronic correlations and phase transitions related to the elastic, magnetic and polarization degrees of freedom. / Diese publikationsbasierte Dissertation ist ein Beitrag zu dem aktuellen Forschungsgebiet der ultraschnellen Strukturdynamik in laserangeregten Nanostrukturen. Die Erforschung solcher Vorgänge ist unabdingbar für ein Verständnis der vielseitigen physikalischen Prozesse auf mikroskopischen Längenskalen in komplexen Materialien, welche enorme Weiterentwicklungen für technologische Anwendungen versprechen. Meine theoretischen und experimentellen Untersuchungen betrachten kohärente, inkohärente und anharmonische Gitterdynamiken in epitaktischen Metal-Isolator-Heterostrukturen auf Zeitskalen von Femtosekunden bis Nanosekunden. Um Einsichten in solche transienten Prozesse in laserangeregten Kristallen zu erhalten, werden experimentelle Techniken herangezogen, die ultrakurze Pulse von sichtbarem Licht und Röntgenstrahlung verwenden. Ein zentraler Bestandteil meiner Arbeit ist die Entwicklung eines Linearkettenmodells zur Simulation und Analyse der laserinitiierten Atombewegungen. Die damit errechneten Verzerrungsfelder werden anschließend verwendet, um die Änderung der optischen und Röntgeneigenschaften der betrachteten Dünnfilm- und Vielschichtsysteme zu simulieren. Diese Rechnungen werden dann mit den experimentellen Daten verglichen, um die experimentellen Signaturen mit errechneten strukturellen Prozessen zu identifizieren. Dadurch erhält man Einsicht in die vielseitige Gitterdynamiken, was z.B. einen kohärenten Transport der Vibrationsenergie von lokal angeregten Bereichen durch delokalisierte Phononenmoden offenbart. Es wird gezeigt, dass die komplexen Deformationen in maßgeschneiderten Vielschichtsystemen hochgradig nichtlineare Röntgenbeugungseffekte auf Grund von transienten Interferenzerscheinungen verursachen. Das Verständnis dieser Prozesse und die Möglichkeit, diese präzise zu simulieren, werden dazu verwendet, neuartige ultraschnelle Röntgenoptiken zu entwerfen. Insbesondere erläutere ich mehrere Phonon-Bragg-Schalter-Konzepte für die effiziente Erzeugung ultrakurzer Röntgenpulse, die in zeitaufgelösten Strukturanalysen Anwendung finden. Auf Grund der Erweiterung der numerischen Modelle zur Beschreibung von inkohärenter Phononenausbreitung und anharmonischer Gitterpotentiale decken diese ebenfalls die aktuellen Themengebiete von Wärmetransport auf Nanoskalen und anharmonischer Phonon-Phonon-Wechselwirkung (z.B. nichtlineare Schallausbreitung und Phononendämpfung) ab. Die erstere Thematik wird am Beispiel der zeitaufgelösten Wärmeleitung von einem dünnen SrRuO3-Film in ein SrTiO3-Substrat behandelt, wobei ein unerwartet langsamer Wärmetransport zu Tage tritt. Außerdem diskutiere ich mehrere Experimente, die auf Grund der sehr guten Reproduzierbarkeit durch die numerischen Modelle starke Gitteranharmonizitäten in dem oxidischen Perowskit SrTiO3 bezeugen. Diese Dissertation erarbeitet zusätzlich verschiedene Weiterentwicklungen von experimentellen Methoden, wie z.B. die zeitaufgelöste Phononenspektroskopie mittels optischer Photonen und Röntgenphotonen, sowie Konzepte für die Umsetzung von Röntgenbeugungsexperimenten an Standard-Synchrotronquellen mit stark verbesserter Zeitauflösung für weitere Studien von ultraschnellen Strukturvorgängen.