Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation. Non-volatile memories based on ferroelectric lead-zirconium-titanate (PZT) (see fig. la) are available on the market for more than a quarter of a century now [1]. Yet they are limited to niche applications due to the compatibility issues of the ferroelectric material with CMOS processes and the associated limited scalability [2]. The discovery of ferroelectricity in doped hafnium oxide has revived the activities towards a variety of scalable ferroelectric nonvolatile memory devices

Die Digitalisierung ist in vollem Gange. Viele Geräte werden intelligent, das heißt sie bekommen ein eigenes Rechenwerk und werden mit permanentem Internetzugang ausgestattet. Da viele dieser neuen intelligenten Geräte möglichst mobil sein sollen, werden neue energieeffiziente nichtflüchtige Halbleiterspeicher notwendig. Das hat zur Folge, dass großer Forschungsaufwand in die Entwicklung neuer Speicherkonzepte und der dafür notwendigen Materialien gesteckt wird. Daraus ergibt sich ein breites Forschungsfeld für zukünftige Speicherkonzepte. Hierfür wird versucht auf Grundlage von ferroelektrischen, magnetischen oder resistiven Materialeigenschaften neue Speicherbauelemente zu entwickeln und zur Anwendung zu bringen. Daraus folgten bereits Konzepte wie der magnetische RAM, der resistive RAM und der ferroelektrische RAM. Neue ferroelektrische Speicherkonzepte basierend auf Materialien mit Perowskitstruktur zeigten zwar viele positive Eigenschaften, konnten aber mangels ausreichender Skalierbarkeit keinen breiten Marktzugang finden. Die Entdeckung von Ferroelektrizität in dünnen dotierten HfO2-Schichten kann dieses Problem überwinden und ist dadurch für die weitere Entwicklung neuer Speicherkonzepte von großer Bedeutung. Das Mischoxid Hafniumdioxid-Zirkondioxid hat sich als eines der geeignetsten auf Hafniumdioxid basierenden ferroelektrischen Materialsysteme erwiesen. Gemein haben alle ferroelektrischen hafniumbasierten Schichten, dass die polare orthorhombische Kristallphase der Ursprung des ferroelektrischen Verhaltens ist. Das Verständnis der Phasenübergänge und der Phasenstabilisierung in dotiertem, ferroelektrischem HfO2 ist somit von entscheidender Bedeutung für zukünftige ferroelektrische Speicheranwendungen. In dieser Arbeit wird der Einfluss der Sauerstoffkonzentration auf die Stabilisierung der monoklinen, orthorhombischen und tetragonalen Kristallphasen und deren Auswirkung auf die ferroelektrischen Eigenschaften untersucht. Dafür werden detaillierte elektrische und strukturelle Untersuchungen an gesputterten und mit Atomlagenabscheidung hergestellten, dünnen HfO2- und Hf(1-x)Zr(x)O2-Schichten vorgenommen. Die Sauerstoffkonzentration wurde entweder direkt über die Prozessparameter während der Abscheidung oder nachträglich durch Änderung der Elektrodenstöchiometrie beeinflusst. Dadurch konnten Parameter gefunden werden, die die Stabilisierung der ferroelektrischen orthorhombischen Kristallphase positiv beeinflussen. Temperaturabhängige Untersuchungen erlaubten zusätzlich die nähere Betrachtung welcher Klasse von Ferroelektrika ferroelektrisches Hafniumdioxid zugeordnet werden kann. Für den orthorhombisch-tetragonalen Phasenübergang konnte ein Phasenübergang erster Ordnung mit kleiner Temperaturhysterese und einem Peak in der relativen Permittivität, in Übereinstimmung mit dem Curie-Weiss-Verhalten, beobachtet werden. Mit diesen und weiteren Beobachtungen kann HfO2 sehr wahrscheinlich der Klasse der echten Ferroelektrika zugeordnet werden. Die Ergebnisse dieser Arbeit schließen eine weitere Lücke im Verständnis der Ferroelektrizität in HfO2 und können ein weiterer Schritt auf dem Weg zur Anwendung auf dem Massenmarkt sein.:Index I 1 Einleitung 1 2 Theoretische Grundlagen 3 2.1 Ferroelektrizität . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1.1 Thermodynamische Betrachtungen der Ferroelektrizität . . . . . . . . . . . . . . 6 2.1.2 Preisach-Modell und das Auftreten ferroelektrischer Domänen . . . . . . . . . . 11 2.1.3 Reales ferroelektrisches Verhalten . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2 Ferroelektrizität in HfO 2 -basierten Materialien . . . . . . . . . . . . . . . . . . . 13 2.2.1 Ursachen der Ferroelektrizität in Hafniumdioxid . . . . . . . . . . . . . . . . . . 16 2.2.2 Ferroelektrisches Verhalten dünner HfO 2 -Schichten . . . . . . . . . . . . . . . . . 21 2.3 Anwendungsmöglichkeiten ferroelektrischer Materialien . . . . . . . . . . . . . . 29 2.3.1 Speicheranwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.3.2 Weitere Anwendungsfelder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 3 Probenherstellung und deren elektrische und strukturelle Charakterisierung 36 3.1 Prozessfluss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.1.1 Atomlagenabscheidung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.1.2 Sputterabscheidung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.2 Strukturelle Charakterisierung . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 3.3 Chemische Charakterisierung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 3.4 Elektrische Charakterisierung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 4 Stabilisierung der ferroelektrischen Phase in HfO 2 und der Einfluss der Sau- erstoffkonzentration 49 4.1 Undotiertes gesputtertes HfO 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 4.1.1 Eigenschaften undotierter gesputterter HfO 2 -Schichten . . . . . . . . . . . . . . . 51 4.1.2 Einfluss der Sauerstoffkonzentration während der Abscheidung auf die orthorhom- bische Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 4.2 Zusammenspiel von Sauerstoffkonzentration und ZrO 2 -Konzentration . . . . . . 72 4.3 Einfluss von IrO 2 -Metalloxidelektroden auf die orthorhombische Phase der HfO 2 - Schichten . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 5 Temperaturstabilität der ferroelektrischen Schichten 97 5.1 Einfluss der Ozondosiszeit auf mit Atomlagenabscheidung hergestellte Hf 0,5 Zr 0,5 O 2 - Schichten . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 5.2 Temperaturabhängige Phasentransformation . . . . . . . . . . . . . . . . . . . . 102 5.3 Klassifizierung von ferroelektrischem HfO 2 . . . . . . . . . . . . . . . . . . . . . 120 5.4 Temperaturstabilität des Konditionierungseffekts . . . . . . . . . . . . . . . . . . 123 5.5 Zusammenfassung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 6 Zusammenfassung und Ausblick 127 Literaturverzeichnis XII Abbildungsverzeichnis XLII Tabellenverzeichnis LII A Abkürzungen und Formelzeichen LIII B Publikationsliste LVII C Danksagung LXII D Lebenslauf LXIV / Digitization is in full swing. Many prior offline devices are becoming smart devices with permanent internet access. Since many of these new smart devices are expected to be as mobile as possible, new energy-efficient non-volatile semiconductor memories are needed. As a consequence, a great effort of research is being put into the development of new memory concepts and the materials required for them. This results in the research field of emerging memories, which tries to develop and apply new memory concepts based on ferroelectric, magnetic or resistive material properties. Concepts such as magnetic RAM, resistive RAM and ferroelectric RAM followed. Ferroelectric memory concepts based on perovskite showed many positive properties, but could not find a broad market access due to a lack of sufficient scalability. The discovery of ferroelectricity in doped HfO2 thin films can overcome this problem and is thus of great importance for the further development of new memory concepts. The composition of hafnium dioxide and zirconium dioxide has proven to be one of the most suitable hafnium-based ferroelectric material systems. Common to all ferroelectric hafnium-based films is that the polar orthorhombic crystal phase is the origin of the ferroelectric behavior. Thus, understanding the phase transitions and stabilization in doped ferroelectric HfO2 is crucial for future ferroelectric memory applications. In this work, the influence of oxygen concentration on the stabilization of the monoclinic, orthorhombic and tetragonal crystal phase and its effect on the ferroelectric properties is investigated. For this purpose, detailed electrical and structural studies are performed on sputtered and atomic layer deposition prepared thin HfO2 and Hf(1-x)Zr(x)O2 films. The oxygen concentration was influenced either directly by the process parameters during deposition or subsequently by changing the electrode stoichiometry. Thus, parameters were found to positively influence the stabilization of the ferroelectric orthorhombic crystal phase. Temperature-dependent investigations additionally allowed a closer look at which class of ferroelectrics hafnium oxide-based ferroelectrics can be assigned to. For the orthorhombic-tetragonal phase transition, a first-order phase transition with small temperature hysteresis and a peak in relative permittivity, in agreement with the Curie-Weiss-behavior, could be observed. With these and other observations, HfO2 can most likely be assigned to the class of proper ferroelectrics. The results of this work fill another gap in the understanding of ferroelectricity in HfO2 and may be another step towards mass market applications.:Index I 1 Einleitung 1 2 Theoretische Grundlagen 3 2.1 Ferroelektrizität . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1.1 Thermodynamische Betrachtungen der Ferroelektrizität . . . . . . . . . . . . . . 6 2.1.2 Preisach-Modell und das Auftreten ferroelektrischer Domänen . . . . . . . . . . 11 2.1.3 Reales ferroelektrisches Verhalten . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2 Ferroelektrizität in HfO 2 -basierten Materialien . . . . . . . . . . . . . . . . . . . 13 2.2.1 Ursachen der Ferroelektrizität in Hafniumdioxid . . . . . . . . . . . . . . . . . . 16 2.2.2 Ferroelektrisches Verhalten dünner HfO 2 -Schichten . . . . . . . . . . . . . . . . . 21 2.3 Anwendungsmöglichkeiten ferroelektrischer Materialien . . . . . . . . . . . . . . 29 2.3.1 Speicheranwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 2.3.2 Weitere Anwendungsfelder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 3 Probenherstellung und deren elektrische und strukturelle Charakterisierung 36 3.1 Prozessfluss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 3.1.1 Atomlagenabscheidung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 3.1.2 Sputterabscheidung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3.2 Strukturelle Charakterisierung . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 3.3 Chemische Charakterisierung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 3.4 Elektrische Charakterisierung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 4 Stabilisierung der ferroelektrischen Phase in HfO 2 und der Einfluss der Sau- erstoffkonzentration 49 4.1 Undotiertes gesputtertes HfO 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 4.1.1 Eigenschaften undotierter gesputterter HfO 2 -Schichten . . . . . . . . . . . . . . . 51 4.1.2 Einfluss der Sauerstoffkonzentration während der Abscheidung auf die orthorhom- bische Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 4.2 Zusammenspiel von Sauerstoffkonzentration und ZrO 2 -Konzentration . . . . . . 72 4.3 Einfluss von IrO 2 -Metalloxidelektroden auf die orthorhombische Phase der HfO 2 - Schichten . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 5 Temperaturstabilität der ferroelektrischen Schichten 97 5.1 Einfluss der Ozondosiszeit auf mit Atomlagenabscheidung hergestellte Hf 0,5 Zr 0,5 O 2 - Schichten . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 5.2 Temperaturabhängige Phasentransformation . . . . . . . . . . . . . . . . . . . . 102 5.3 Klassifizierung von ferroelektrischem HfO 2 . . . . . . . . . . . . . . . . . . . . . 120 5.4 Temperaturstabilität des Konditionierungseffekts . . . . . . . . . . . . . . . . . . 123 5.5 Zusammenfassung . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 6 Zusammenfassung und Ausblick 127 Literaturverzeichnis XII Abbildungsverzeichnis XLII Tabellenverzeichnis LII A Abkürzungen und Formelzeichen LIII B Publikationsliste LVII C Danksagung LXII D Lebenslauf LXIV

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In this thesis, an interface passivation by a lattice matched atomic layer deposition (ALD) epitaxial magnesium calcium oxide (MgCaO) on wide-bandgap gallium nitride (GaN) has been applied for the first time and expensively studied via various characterization methods (including AC conductance methods, pulsed current-voltage, and single pulse charge pumping). Also, beta-Ga2O3 with a monoclinic crystal structure that offers several surface oriented channels has been demonstrated as potential beta-Ga2O3 FET. On the other hand, low frequency noise studies in 2-D MoS2 NC-FETs was reported for the first time. Low frequency noise of the devices is systematically studied depending on various interfacial oxides, different thicknesses of interfacial oxide, and ferroelectric hafnium zirconium oxide. Interestingly enough, the low frequency noise is found to decrease with thicker ferroelectric HZO in the subthreshold regime of the MoS2 NC-FETs, in stark contrast to the conventional high-k transistors. Also, the ferroelectric switching speed is found to be related with the maximum electric field applied during the fast gate voltage sweep, suggesting the internal ferroelectric switching speed can be even faster depending on the device’s electrical bias conditions and promises a high speed performance in our ferroelectric HZO

Neste trabalho, cerâmicas de BaTiO3 foram preparadas pelo método de Pechini com o propósito de estudar as suas propriedades dielétricas, incluindo as anomalias dielétricas de origem interfacial nestes ferroelétricos. Após calcinação das soluções precursoras a 600 oC por 2h, os pós compactados foram sinterizados a várias temperaturas entre 1150 e 1450 oC. Subseqüentemente, foram realizadas caracterizações (micro)estruturais aplicando as técnicas de microscopia eletrônica de varredura e difração de raios X, além de estudos dielétricos utilizando a técnica de espectroscopia de impedância. Destas caracterizações, verificou-se a obtenção de materiais cerâmicos com tamanhos de grãos variando entre 0,8 e 37 micrometros ao aumentar a temperatura de sinterização. Os resultados de dinâmica térmica de densificação indicam a contribuição de dois mecanismos independentes: (i) sinterização com participação de fase líquida, induzindo altas densidades dos materiais a partir de ~1300 oC (perto do ponto eutético), e (ii) sinterização via reação de estado sólido, implicando alta sinterabilidade mesmo abaixo dos 1300 oC, em se tratando de pós nanométricos, ou seja, com alta densidade de defeitos e, portanto, processos de difusão iônica intensificados. Por outro lado, a resposta dielétrica dos grãos evidenciou o cumprimento da lei de Curie-Weiss, típica de ferroelétricos, enquanto um fenômeno de anomalia dielétrica (não cumprimento desta lei) foi observado para as respostas totais destes materiais em altas temperaturas e baixas freqüências. A análise dos resultados de espectroscopia de impedância via circuito equivalente, sendo considerado o modelo de camadas (grãos e contornos de grãos) em série, revelou a predominância das propriedades dielétricas das interfaces intergranulares como a causa desta anomalia. Considerando a relação entre propriedades macroscópicas e microscópicas no modelo, a variação da intensidade da anomalia é discutida em função do tamanho dos grãos, sendo este parâmetro uma medida (função inversa) da densidade das interfaces intergranulares. Em geral, este trabalho revela uma excelente correlação entre microestruturas, circuito equivalente e propriedades dielétricas exibidas por estes materiais eletrocerâmicos. / BaTiO3 ceramics were prepared in this work, following the Pechinis method, with the purpose of studying their dielectric properties, including especially the occurrence and characteristics of dielectric anomalies associated to internal interfaces, as often found in ferroelectrics. After calcination of the precursor solutions at 600 oC for 2h, the synthesized green compacts were sintered at several temperatures from 1150 to 1450 oC. Subsequently, (micro)structural characterizations were carried out by applying scanning electron microscopy and X-ray diffraction techniques, followed by dielectric measurements using the impedance spectroscopy technique. From these characterizations, the production of ceramic bodies with average grain sizes varying from 0.8 to 37 micrometer was verified when increasing the sintering temperature. The results of thermal dynamics of densification indicate the contribution of two independent mechanisms, namely (i) liquid phase-assisted sintering, inducing high materials density from ~1300 oC (close to the eutectic point) above, and (ii) solid-state sintering, implying high sinterability even below 1300 oC, as dealing with nanoparticles-sized powders, meaning high density of surface defects and, thus, enhanced ionic diffusion processes. On the other hand, while the dielectric response of the grains satisfied the Curie-Weiss law, typical of ferroelectrics, a dielectric anomaly (departure from this law) phenomenon was observed for the total dielectric response of these materials towards higher temperatures and lower frequencies. The analysis of the results from impedance spectroscopy via equivalent circuit, involving consideration of the series layer (grains and grain boundaries) model, revealed that the predominance of the dielectric properties from the intergranular interfaces is responsible for occurrence of this anomaly. Considering the relation between macroscopic and microscopic properties holding in this model, the variation of the anomaly strength is here discussed in terms of the value of average grain size in these ceramics, a microstructural parameter that represents a measure (inverse function) of the density of the intergranular interfaces. In general, the present study reveals a really good correlation between microstructures, equivalent circuit and dielectric properties exhibited by these electroceramic materials.

Les composés à base du plomb sont très utilisés dans l'industrie microélectronique en raison de leurs propriétés ferroélectriques et piézoélectriques. Cependant, en raison de la toxicité du plomb, la recherche est dirigée vers le développement des matériaux piézoélectriques « écologiques » (sans plomb). L’objectif de ce travail consiste donc à synthétiser par procédé sol-gel un matériau piézoélectrique écologique : le Bi0.5Na0.5TiO3 (BNT). Les films minces ont été déposés à l’aide d’une tournette sur des substrats de Pt/TiOx/SiO2/Si. Une étape de séchage sur plaque est appliquée à 100ºC après chaque dépôt. L’utilisation du procédé thermique rapide (RTP) permet la densification et la cristallisation de BNT. Ainsi une pyrolyse est appliquée après le séchage pour densifier le film ; la température a été fixée à 200ºC. Enfin un recuit à 700ºC a permis la cristallisation des films dans la structure pérovskite. Les résultats de caractérisations électriques macroscopiques ainsi que les caractérisations à l’échelle locale ont mis en évidence des performances diélectrique, ferroélectrique et piézoélectrique encourageantes. / Lead based materials are widely used in microelectronic industry due to their ferroelectric and piezoelectric properties. However, due to lead toxicity, it has recently desired to develop lead-free piezoelectric materials for environmental protection. The aim of this work is to synthesize a lead-free piezoelectric material by sol-gel method: Bi0.5Na0.5TiO3. BNT films were deposited by spin coating on Pt/TiOx/SiO2/Si substrate. The films were dried at 100ºC on a hot-plate after each layer deposition. Rapid thermal process (RTP) was used for the densification and crystallization of BNT films. Thus a pyrolysis step is applied to densify the dried film; the temperature was set at 200ºC. The film annealed at 700ºC is well crystallized in the perovskite phase. Macroscopic and local electrical characterizations showed promising dielectric, ferroelectric and piezoelectric properties.

Much recent research has focused on the development lead-free perovskite piezoelectrics as environmentally compatible alternatives to lead zirconate titanate (PZT). Two main categories of lead free perovskite piezoelectric ceramic systems were investigated as potential replacements to lead zirconate titanate (PZT) for actuator devices. First, solid solutions based on Li, Ta, and Sb modified (K���.���Na���.���)NbO��� (KNN) lead-free perovskite systems were created using standard solid state methods. Secondly, Bi-based materials a variety of compositions were explored for (1-x)(Bi���.���Na���.���)TiO���-xBi(Zn���.���Ti���.���)O��� (BNT-BZT) and Bi(Zn���.���Ti���.���)O������(Bi���.���K���.���)TiO������(Bi���.���Na���.���)TiO��� (BZT-BKT-BNT). It was shown that when BNT-BKT is combined with increasing concentrations of Bi(Zn[subscript 1/2]Ti[subscript 1/2])O��� (BZT), a transition from normal ferroelectric behavior to a material with large electric field induced strains was observed. The higher BZT containing compositions are characterized by large hysteretic strains (> 0.3%) with no negative strains that might indicate domain switching. This work summarizes and analyzes the fatigue behavior of the new generation of Pb-free piezoelectric materials. In piezoelectric materials, fatigue is observed as a degradation in the electromechanical properties under the application of a bipolar or unipolar cyclic electrical load. In Pb-based materials such as lead zirconate titanate (PZT), fatigue has been studied in great depth for both bulk and thin film applications. In PZT, fatigue can result from microcracking or electrode effects (especially in thin films). Ultimately, however, it is electronic and ionic point defects that are the most influential mechanism. Therefore, this work also analyzes the fatigue characteristics of bulk polycrystalline ceramics of the modified-KNN and BNT-BKT-BZT compositions developed. The defect chemistry that underpins the fatigue behavior will be examined and the results will be compared to the existing body of work on PZT. It will be demonstrated that while some Pb-free materials show severe property degradation under cyclic loading, other materials such as BNT-BKT-BZT essentially exhibit fatigue-free piezoelectric properties with chemical doping or other modifications. Based on these results, these new Pb-free materials have great potential for use in piezoelectric applications requiring a large number of drive cycles such as MEMS devices or high frequency actuators. / Graduation date: 2013

In the presented thesis, lead-free Ba(Ti0.8Zr0.2)O3-(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using chemical solution deposition method and then the effect of process parameters were investigated to obtain optimum parameters of these lead-free thin films. The phase was selected near to the morphotropic phase boundary (MPH) to increase the number of polarization directions where rhombohedral and tetragonal phases exist together. In this study, the effect of sintering temperatures on microstructure, dielectric and ferroelectric properties were studied systematically. Among the various high-quality BZT-BCT thin films with uniform thickness, the optimum dielectric and ferroelectric responses were observed for films annealed at 800 oC for 1 h sintering time. The thickness was kept constant for all measurements as 500 nm (triple layered films). Therefore, the average grain sizes were found around 60 nm for samples sintered at 700,750 and 800 oC. BZT-BCT thin films sintered at 800 oC showed effective remnant polarization and coercive field values of 2.9 &micro / C/cm2 and 49.4 kV/cm, together with a high dielectric constant and low loss tangent of 365.6 and 3.52 %, respectively, at a frequency of 600 kHz due to pure perovskite phase showing full crystallization and minimum surface porosity obtained at this temperature.

Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and piezoelectric properties. The material has been widely studied for use in high frequency transducers, multi-layered capacitors, and ferroelectric random access memory. Copper foils are an inexpensive, flexible substrate with a low resistivity which makes them ideal for many transducer and capacitor applications. PZT thin films on copper foils were produced by RF sputtering and crystallized under reducing conditions. Causes and prevention of a cuprous oxide interlayer are discussed. The film structure was characterized by XRD, SEM, and AFM. The permittivity was low, but remanent polarization increased to as high as ~40 μC/cm² as film thickness and crystallization temperature increased. Residual stresses were measured by x-ray diffraction using the sin²ψ method. The relative permittivity of the PZT/Cu films was measured as a function of applied AC electric field. By performing a Rayleigh analysis on this data one can determine the relative contributions of the intrinsic, reversible, and irreversible components to the permittivity. The residual stress could be correlated to the reversible part of the permittivity. The first order reversal curves (FORCs), which characterize the ferroelectric switching, give indications of the defect state of the film. Cantilever energy harvesters were fabricated. Large electrodes were able to be evaporated onto the films after oxidizing pinholes and cracks on a hot plate. Devices were tested on a shaker table at < 100 Hz. A dynamic model based on Euler-Bernoulli beam equations was used to predict power output of the fabricated devices. The observed output was comparable to model predictions. Resonant frequency calculations were in line with observed first and second resonances at ~17 Hz and ~35 Hz which were also close to those predicted by the dynamic model. / Graduation date: 2013