Barium Titanate (BaTiO3 or BTO) has attracted an ever increasing research interest because of its wide range of potential applications. Nano-sized or nanostructured BTO has found applications in new, useful smart devices, such as sensors and piezoelectric devices. Not only limited to one material, multi-layers or multi-phases can lead to multifunctional applications; for example, nanocomposites can be fabricated with ferrite or metal phase with BTO. In this study, I synthesized various BTO-ferrites, ranging from nanoparticles, nanowires to thin films. BTO-ferrite coaxial nanotubes, BTO-ferrite self-assemble thin films, and BTO single phase films were prepared by pulsed laser deposition (PLD) and sol-gel process. BTO-ferrite nanocomposites were grown by solid state reaction. Furthermore, BTO-metal nanostructures were also synthesized by solid state reaction under hydrogen gas which gave us a great inspiration to fabricate metal-ceramic composites. To understand the relationship between metal and BTO ceramic phase, I also deposited BTO film on Au buffered substrates. A metal layer can affect the grain size and orientation in BTO film which can further help us to control the distribution of dielectric properties of BTO films. After obtaining different nanomaterials, I am interested in the applications of these materials. Recently, many interesting electric devices are developed based on nanotechnology, e.g.: memristor. Memristor is a resistor with memory, which is very important in the computer memory. I believe these newly-synthesized BTO based nanostructures are useful for development of memristor, sensors and other devices to fit increasing needs. / Ph. D.

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Ferroelectric materials are very promising for a variety of applications such as high-permittivity capacitors, ferroelectric memories, pyroelctric sensors, piezoelectric and electrostrictive transducers and electro-optic devices, etc. In the area of ferroelectric ceramics, lead-based compounds, which include lead zirconatetitanate (PZT) solid solutions, occupy an important place because of their superior physical properties. However, due to the toxicity of lead, there is an increasing concern over recycling and disposing of the devices made out of these compounds, which has compelled the researchers around the globe to search for lead-free compounds with promising piezo and ferroelectric properties. Ferroelectric materials that belong to Aurivillius family of oxides have become increasingly important from the perspective of industrial applications because of their high Curie-temperatures, high resistivity, superior polarization fatigue resistanceand stable piezoelectric properties at high temperatures. These bismuth layer-structured ferroelectrics (BLSF) comprise an intergrowth of [Bi2O2]2+ layers and [An+1Bn O3n+1]2- pseudo-perovskite units, where ‘n’ represents the number of perovskite-like layers stacked along the c-axis. ‘A’ stands for a mono-, di- or trivalent ions or a combination of them, ‘B’ represents a small ion with high valencysuch as Ti4+, Nb5+, Ta5+or a combination of them.Ferroelectricity in the orthorhombic phase of these compounds was generally attributed to the cationic displacement along the polar a-axis and the tilting of octahedra around the a- and c-axes. Sr2Bi4Ti5O18(SBT) is ann = 5 member of the Aurivillius family and possess promising ferroelectric and piezoelectric properties that could be exploited for a wide range of applications, including ferroelectric random access memories (FeRAM), piezoelectric actuators, transducers and transformers. Reports in the literaturereveal that the ferroelectricand piezoelectric properties of these oxides can be tuned depending on synthesis routes vis-a-vis micro-structural aspects (texture, grain size) and site specific dopant substitutions.In the present study, textured SBT ceramics were fabricated using pre-reacted precursors and their anisotropic dielectric, piezoelectric and ferroelectric properties were demonstrated. Grain size tunability with regard to their physical properties was accomplished in the ceramics, fabricated using fine powders obtained from citrate assisted sol-gel synthesis. The grain size dependent second harmonic generation activity of SBT ceramics was investigated. Enhancement in the piezoelectric and ferroelectric properties of SBT ceramics was achieved by substituting A site ions (Sr2+) with a combination of Na+ and Bi3+. From the perspective of non-linear optical device applications, physical properties associated with the SBT crystallized in a transparent lithium borate glass matrix were studied. The results obtained in the present investigations are organized as follows, Chapter 1 gives a brief exposure to the field of ferroelectrics. The emphasis has been on the ferroelectric oxides belonging to the Aurivillius family. Structural aspects and the underlying phenomena associated with ferroelectricity in these compounds are discussed. A brief introduction to the glasses, thermodynamic aspects of glass formation and fabrication of glass- ceramics are included. Basic principles involved in the non-linear optical activities are highlighted. Chapter 2 describes the various experimental techniques that were employed to synthesize and characterize the materials under investigation. The experimental details pertaining to the measurement of various physical properties are included. Chapter 3 deals with the fabrication of Sr2Bi4Ti5O18 ceramics using the pre-reacted Bi4Ti3O12 and SrTiO3 powders viasolid-state reaction route. These in stoichiometric ratio were uniaxially pressed and sintered at 1130oC for 3 h resulting in textured Sr2Bi4Ti5O18 ceramics. The obtained dense ceramics exhibited crystallographic anisotropy with prominent c-axis oriented grains (Lotgering factor of 0.62) parallel to the uniaxially pressed direction. The resultant anisotropy in the ceramics was attributed to the reactive template-like behavior of Bi4Ti3O12 that was used as a precursor to fabricate Sr2Bi4Ti5O18 ceramics. Dielectric, ferro and piezoelectric properties measured on the ceramics in the direction perpendicular to the uniaxially pressed axis were found to be superior to that measured in the parallel direction. Chapter 4 reports the details pertaining to the synthesis of strontium bismuth titanate (Sr2Bi4Ti5O18) powders comprising crystallites of average sizes in the range of 94–1400 nm via citrate-assisted sol-gel route. X-ray powder diffraction, Transmission Electron Microscopy (TEM) and Raman spectroscopy were employed for the structural studies. A crystallite size-dependent variation in the lattice parameters and the shift in the Raman vibration modes were observed. Second harmonic signal (532 nm) intensity of the Sr2Bi4Ti5O18 powders increased with the increase in the average crystallite size and the maximum intensity obtained in the reflection mode was 1.4 times as high as that of the powdered KH2PO4. Piezo force microscopic analyses carried out on an isolated crystallite of size 74 nm, established its single domain nature with the coercive field as high as 347 kV/cm. There was a systematic increase in the d33 value with an increase in the size of the crystallite and a high piezoelectric coefficient of ~27 pm/V was obtained from an isolated crystallite of size 480 nm. Chapter 5 illustrates the details concerning the fabrication of Sr2Bi4Ti5O18(SBT) ceramics with different grain sizes (93 nm–1.42 μm) using nano-crystalline powders synthesized via citrate assisted sol-gel method. The grain growth in these powder compacts was found to be controlled via the grain boundary curvature mechanism, associated with anactivation energy of 181.9 kJ/mol. Interestingly with a decrease in grain size there was an increase in the structural distortion which resulted in a shift of Curie-temperature (phase transition) towards higher temperatures than that of conventional bulk ceramics. Extended Landau phenomenological theory for the ferroelectric particles was invoked to explain experimentally observed size dependent phase transition temperature and the critical size for SBT is predicted to be 11.3 nm. Grain size dependent dielectric, ferroelectric and piezoelectric properties of the SBT ceramics were studied and the samples comprising average grain size of 645 nm exhibited superior physical properties that include remnant polarization (2Pr) = 16.4 μC cm-2, coercive field (Ec) = 38 kV cm-1, piezoelectric coefficient (d33) = 22 pC N-1 and planar electromechanical coupling coefficient (kp) = 14.8 %. In Chapter 6, the studies pertaining to the fabrication of Sr(2-x)(Na0.5Bi0.5)xBi4Ti5O18 (SNBT) ceramics for various x values (0, 0.1, 0.25, 0.3, 0.4 and 0.5), using fine powders synthesized via sol-gel route are dealt with. X-ray powder diffraction, transmission electron microscopy and Raman spectroscopic studies were carried out to confirm composition dependent structural changes taking place in the SNBT ceramics. Scanning electron microscopic studies carried out on ceramics revealed that dopants played an important role in inhibiting the grain growth. Dielectric constants of the ceramics were found to decrease with an increase in ‘x’. The increase in Curie temperature with increase in ‘x’ is attributed to the decrease in the tolerance factor. Particularly,x = 0.3 composition of the SNBT ceramics exhibited better piezo and ferroelectric properties with a higher Curie-temperature (569 K). The piezoelectric coefficient (d33) and the planar electromechanical coupling coefficient (kp) of SNBT(x = 0.3) were enhanced by 25% and 42% respectively as compared to that of the undoped ceramics. Chapter 7 deals with the glasses in the system (100 –x) {Li2O + 2B2O3} ─x {2SrO + 2Bi2O3 +5TiO2} (where, x = 10, 25 and 35) fabricated via conventional melt-quenching technique. The amorphous and glassy characteristics of the samples were confirmed respectively using X-ray diffraction (XRD) and differential scanning calorimetric (DSC) methods. All the compositions under investigation exhibited two distinct crystallization peaks (exothermic peaks in the DSC traces): the first peak at ~ 545 °C and the second at ~610 °C that were found to be associated with the crystallization of the phases (as confirmed from the XRD studies) Sr2Bi4Ti5O18 (SBT)and Li2B4O7 (LBO) respectively. Non-isothermal crystallization kinetics (using modified Ozawa-type plots) for SBT crystallization in the LBO glass matrix for the compositions x = 10 and 35, indicated three dimensional growth of the crystallites from pre-existing nuclei present in the as-quenched samples and their effective activation energies for crystallization were found to be around 686 ± 85 kJ/mol and 365 ± 53 kJ/mol, respectively. The optical band gap of the as-quenched glasses for the composition x = 35 was 2.52 eV, is less than that of the composition x = 10 (2.91 eV). The Urbach energies for the as-quenched glasses of compositions x = 10, 25 and 35 were found to be 118 ± 2 meV, 119 ± 2 meV and 192 ± 1 meV respectively.The glasses associated with the composition x = 35, on controlled heat-treatment at 515 °C for various durations (1―20 h), yielded glass-ceramics comprising SBT nano-crystals (18―28 nm) embedded in the LBO glass matrix. Compressive strain in the nano-crystallites of SBT, analyzed using Williamson-Hall method was found to decrease with an increase in the crystallite size. The second harmonic generation signal (532 nm) intensity emanating from glass-nanocrystal composites comprising 22.1 nm SBT crystallites was nearly 0.3 times that of a KDP single crystal. Although each chapter is provided with conclusions and a list of references, thesis ends with a separate summary and conclusions.

A 2T2C ferroelectric memory cell consisting of a select transistor, a read transistor and two ferroelectric capacitors that can be operated either in FeRAM mode or in memristive ferroelectric tunnel junction mode is proposed. The two memory devices can be programmed individually. By performing a combined readout operation, the two stored bits of the memory cells can be combined to perform in-memory logic operation. Moreover, additional input logic signals that are applied as external readout voltage pulses can be used to perform logic operation together with the stored logic states of the ferroelectric capacitors. Electrical characterization results of the logic-in-memory (LiM) functionality is presented.

Improved fabrication of poly(vinylindenefluoride)-hexafluoropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a direct approach to Langmuir-Blodgett deposition without the use of annealing or additives. To improve sample quality, an automated Langmuir-Blodgett thin film deposition system was developed; a custom dipping trough was fabricated, a sample dipping mechanism was designed and constructed, and the system was automated using custom LabVIEW software. Samples were fabricated in the form of ferroelectric capacitors on substrates of glass and silicon, and implement a unique step design with a bottom electrode of copper with an aluminum wetting layer and a top electrode of gold with an aluminum wetting layer. Samples were then characterized using a custom ferroelectric measurement program implemented in LabVIEW with a Keithley picoammeter/voltage supply to confirm electric coercivity properties. Further characterization using scanning electron microscopy and atomic force microscopy confirmed the improvement in thin film fabrication over previous methods.

A 2TnC ferroelectric memory gain cell consisting of two transistors and two or more ferroelectric capacitors (FeCAP) is proposed. While a pre-charge transistor allows to access the single cell in an array, the read transistor amplifies the small read signals from small-scaled FeCAPs that can be operated either in FeRAM mode by sensing the polarization reversal current, or in ferroelectric tunnel junction (FTJ) mode by sensing the polarization dependent leakage current. The simultaneous read or write operation of multiple FeCAPs is used to realize compute-in-memory (CiM) algorithms that enable processing of data being represented by both, non-volatilely internally stored data and externally applied data. The internal gain of the cell mitigates the need for 3D integration of the FeCAPs, thus making the concept very attractive especially for embedded memories. Here we discuss design constraints of the 2TnC cell and present the proof-of-concept for realizing versatile (CiM) approaches by means of electrical characterization results.

Indiana University-Purdue University Indianapolis (IUPUI) / Improved fabrication of poly(vinylindenefluoride)-hexafluoropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a direct approach to Langmuir-Blodgett deposition without the use of annealing or additives. To improve sample quality, an automated Langmuir-Blodgett thin film deposition system was developed; a custom dipping trough was fabricated, a sample dipping mechanism was designed and constructed, and the system was automated using custom LabVIEW software. Samples were fabricated in the form of ferroelectric capacitors on substrates of glass and silicon, and implement a unique step design with a bottom electrode of copper with an aluminum wetting layer and a top electrode of gold with an aluminum wetting layer. Samples were then characterized using a custom ferroelectric measurement program implemented in LabVIEW with a Keithley picoammeter/voltage supply to confirm electric coercivity properties. Further characterization using scanning electron microscopy and atomic force microscopy confirmed the improvement in thin film fabrication over previous methods.

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.:1 Introduction 2 Fundamentals 2.1 Non-volatile semiconductor memories 2.2 Emerging memory concepts 2.3 Ferroelectric memories 3 Characterisation methods 3.1 Memory characterisation tests 3.2 Ferroelectric memory specific characterisation tests 3.3 Trapping characterisation methods 3.4 Microstructural analyses 4 Sample description 4.1 Metal-insulator-metal capacitors 4.2 Ferroelectric field effect transistors 5 Stabilisation of the ferroelectric properties in Si:HfO2 thin films 5.1 Impact of the silicon doping 5.2 Impact of the post-metallisation anneal 5.3 Impact of the film thickness 5.4 Summary 6 Electrical properties of the ferroelectric Si:HfO2 thin films 6.1 Field cycling effect 6.2 Switching kinetics 6.3 Fatigue behaviour 6.4 Summary 7 Ferroelectric field effect transistors based on Si:HfO2 films 7.1 Effect of the silicon doping 7.2 Program and erase operation 7.3 Retention behaviour 7.4 Endurance properties 7.5 Impact of scaling on the device performance 7.6 Summary 8 Trapping effects in Si:HfO2-based FeFETs 8.1 Trapping kinetics of the bulk Si:HfO2 traps 8.2 Detrapping kinetics of the bulk Si:HfO2 traps 8.3 Impact of trapping on the FeFET performance 8.4 Modified approach for erase operation 8.5 Summary 9 Summary and Outlook

Parmi les matériaux piézo-électriques, les pérovskites ferroélectriques à base de plomb sont connus pour avoir les meilleurs coefficients piézo-électriques et couplage électromécanique. Ils sont largement utilisés dans diverses applications industrielles et technologiques. Les "ferroélectrique relaxeurs" appartiennent à cette famille. Leur structure est caractérisée par la présence de nanorégions polaires orientées de façon aléatoire. Dans cette thèse, nous nous sommes intéressés à l'étude des propriétés structurales et dynamiques de matériaux ferroélectriques et relaxeurs tels que PbTiO3, PbZr0.52Ti0.48O3, PbMg1/3Nb2/3O3 (PMN), PbZn1/3Nb2/3O3, et PbMg1/3Ta2/3O3 (PMT). La structure à longue et courte portée a été étudiée par diffraction de neutrons et spectroscopie d'absorption des rayons X (XAFS), alors que la spectroscopie hyper-Raman (HR) est utilisée pour sonder les vibrations. L'analyse de la structure locale de matériaux pérovskites complexes AB'B''O3 montre que la pression diminue le désordre statique des gros cations occupant le site B, tandis que le champ électrique appliqué a un effet opposé. Cette distortion induite sous champ pourrait être à l'origine des forts coefficient piézoélectrique dans ces matériaux. La diffusion HR dans PMN et PMT a permis d'observer pour la première fois le "mode mou" responsable de la dépendance en température de la constante diélectrique. L'analyse des règles de sélection et la description en modes propres des vibrations actives en HR, permet de rendre compte de l'implication de chaque atome dans le comportement structural en température des ferroélectriques relaxeurs. / Among piezoelectric materials, lead-based ferroelectric perovskites are known to have the largest piezoelectric coefficients and electromechanical coupling. They are widely used in dfferent industrial and technological applications. The so-called "relaxors" belong to this family. Their structure is characterized by the presence of randomly oriented polar nanoregions. In this thesis, we are interested in studying the structural and dynamical properties of prototypical ferroelectric materials and relaxors such as PbTiO3, PbZr0.52Ti0.48O3, PbMg1/3Nb2/3O3 (PMN), PbZn1/3Nb2/3O3, and PbMg1/3Ta2/3O3 (PMT). The long and short range structure has been investigated by neutron diffraction and X-ray absorption fine structure (XAFS), while hyper-Raman scattering (HRS) is used to probe the vibrations. The local structure analysis of complex perovskite materials AB'B''O3 shows that pressure reduces the static disorder of the large cation occupying the B-site, while an applied electric field has an opposite effect. This field-induced distortion might relate to the large piezoelectric coefficient in such materials. HRS in PMN and PMT allows the first observation of the "primary" soft mode responsible for the temperature dependence of the dielectric constant. The selection rule analysis reveals the nature of the HRS active vibrational bands and enables us to get insights about the involvement of each atom in the structural modifications upon temperature.

Résumé / Abstract