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Energy-Efficient Capacitance-to-Digital Converters for Smart Sensor ApplicationsAlhoshany, Abdulaziz 12 1900 (has links)
One of the key requirements in the design of wireless sensor nodes and miniature biomedical devices is energy efficiency. For a sensor node, which is a sensor and readout circuit, to survive on limited energy sources such as a battery or harvested energy, its energy consumption should be minimized. Capacitive sensors are candidates for use in energy-constrained applications, as they do not consume static power and can be used in a wide range of applications to measure different physical, chemical or biological quantities. However, the energy consumption is dominated by the capacitive interface circuit, i.e. the capacitance-to-digital converter (CDC).
Several energy-efficient CDC architectures are introduced in this dissertation to meet the demand for high resolution and energy efficiency in smart capacitive sensors. First, we propose an energy-efficient CDC based on a differential successive-approximation data converter. The proposed differential CDC employs an energy-efficient operational transconductance amplifier (OTA) based on an inverter. A wide capacitance range with fine absolute resolution is implemented in the proposed coarse-fine DAC architecture which saves 89% of silicon area. The proposed CDC achieves an energy efficiency figure-of-merit (FOM) of 45.8fJ/step, which is the best reported energy efficiency to date. Second, we propose an energy efficient CDC for high-precision capacitive resolution by using oversampling and noise shaping. The proposed CDC achieves 150 aF absolute resolution and an energy efficiency FOM of 187fJ/conversion-step which outperforms state of the art high-precision differential CDCs. In the third and last part, we propose an in-vitro cancer diagnostic biosensor-CMOS platform for low-power, rapid detection, and low cost. The introduced platform is the first to demonstrate the ability to screen and quantify the spermidine/spermine N1 acetyltransferase (SSAT) enzyme which reveals the presence of early-stage cancer, on the surface of a capacitive biosensor. This platform, which is a biosensor combined with a highly energy-efficient digital CDC, is implemented and fabricated in a CMOS technology and can sense and convert the capacitance value from the biosensor to a digital word in an energy efficient way. The platform achieves an ultra-low power consumption: four orders of magnitude less than the state-of-the-art biosensor-CMOS platforms.
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Output Capacitance Loss Measurement and Validation for Low-Voltage Silicon and GaN Devices in DC-DC Converter ApplicationsSoni, Abhinav 14 July 2023 (has links)
With the rise of soft-switched converter topologies which enable high-frequency power conversion, there has been a premise that these converter topologies can help achieve loss-less switching in a power device. However, this theory is not completely true as there even with soft-switching there is some degree of loss associated in the form of output capacitance-related hysteresis loss, channel turn-off loss, and loss during the dead-time period in these converter topologies.
The soft-switching converters utilize the existence of the device's output capacitance (COSS), which is charged and discharged consecutively at each switching cycle, and a hysteresis loss exists due to the difference in charging and discharging output capacitance. In order fully utilize the potential of these novel soft-switching topologies, we need to investigate further into the origins of these losses or loss mechanisms, methods to measure or compute these losses, and then devise ways to optimize the loss for a given application.
This work focuses on exploring methods to quantify this loss for different operating conditions like device current, switching frequency, dV/dT, etc. In this aspect, some methods have been studied and used to quantify this hysteresis loss for a variety of power devices like SI and GaN. It is reported that only channel turn-off losses exist in devices with ZVS transition, however, we found that the charging and discharging of COSS is not loss-free and thus it is important that we account for this loss in the design process.
Finally, the loss data obtained from these tests are compared with each other for five different power devices to validate their applicability, and later these test results are used to get an optimized device selection criterion for the best possible efficiency and minimal losses for a ZVS application. / Master of Science / To eliminate the switch-related losses, soft-switching or zero-voltage switching (ZVS) was introduced which provides a soft transition of voltage and current instead of a sharp transition like in hard-switched converters. Moreover, the output capacitance of the devices is charged/discharged to achieve soft switching, which also possesses a loss (hysteresis loss) due to repeated charging and discharging of output capacitance.
Soft-switching converter topologies have gained quite a momentum for almost a decade, and it keeps on increasing in the distant future, to extract the maximum benefits from these topologies is to operate at high switching frequencies to minimize the size and volume of the converter. However, the hysteresis loss can severely impact the converter efficiency on even a few 100 kHz and MHz levels.
This work focuses on exploring methods to measure hysteresis loss in output capacitance which has a major share in the overall switching loss. In this regard, some methods have been investigated that deal with the measurement of the output capacitance-related hysteresis loss and are implemented to get the hysteresis loss data for different power devices.
Two test methods (calorimetric and non-linear resonance) are implemented on five different power devices (3 SI and 2 GaN) to get the energy loss in the output capacitance; these test results are used to explain the switching loss in an isolated boost resonance DC-DC converter, and a concept of ZVS figure of merit is used to obtain the optimized device. Moreover, a design example of a soft-switched converter is presented to highlight the impact of COSS hysteresis loss in the overall switching loss of primary side devices.
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Thermoelectric properties of rare-earth lead selenide alloys and lead chalcogenide nanocompositesThiagarajan, Suraj Joottu 11 December 2007 (has links)
No description available.
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High Figure of Merit Lead Selenide Doped with Indium and Aluminum for Use in Thermoelectric Waste Heat Recovery Applications at Intermediate TemperaturesEvola, Eric G. 25 June 2012 (has links)
No description available.
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THEORETICAL AND NUMERICAL STUDY OF TRANSVERSE THERMOELECTRICSQian, Bosen January 2018 (has links)
Thermoelectric materials are capable of direct conversion of thermal energy to electrical energy and vice versa. Their applications include thermoelectric coolers, generators, as well as sensors. Conventional thermoelectric devices consist of multiple units of p-type and n-type semiconducting elements, in which electrical current and heat flux flow parallel to each other. In contrast, transverse thermoelectric devices could decouple electrical current and heat flux such that they flow perpendicular to each other. Transverse thermoelectricity could be realized in single-phase anisotropic materials or composite materials with engineered anisotropy. Studies have shown that composite transverse thermoelectric materials could provide a better performance than their single-phase counterparts. In this dissertation proposal, two configurations of transverse thermoelectric composites are examined using both analytical and numerical methods. Mathematical models are established to calculate the effective properties of anisotropic thermoelectric composites by analyzing the representative unit cells using the Kirchhoff circuit law (KCL) and the Thevenin’s theorem followed by tensor transformation. Thermoelectric figure of merit (ZT), power factor, as well as cooling performance (maximum cooling temperature ΔTmax) of transverse thermoelectrics are studied. Comparisons between the mathematical models and numerical simulation showed good agreement, while some discrepancies are observed and discussed. Since transverse composite thermoelectrics can decouple the electrical and thermal transports, they can offer new opportunities for device design including thin film sensors and cascading coolers, as well as for performance enhancement such as improved power factors. / Mechanical Engineering
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Investigation of Power Semiconductor Devices for High Frequency High Density Power ConvertersWang, Hongfang 03 May 2007 (has links)
The next generation of power converters not only must meet the characteristics demanded by the load, but also has to meet some specific requirements like limited space and high ambient temperature etc. This needs the power converter to achieve high power density and high temperature operation. It is usually required that the active power devices operate at higher switching frequencies to shrink the passive components volume.
The power semiconductor devices for high frequency high density power converter applications have been investigated. Firstly, the methodology is developed to evaluate the power semiconductor devices for high power density applications. The power density figure of merit (PDFOM) for power MOSFET and IGBT are derived from the junction temperature rise, power loss and package points of view. The device matrices are generated for device comparison and selection to show how to use the PDFOM. A calculation example is given to validate the PDFOM. Several semiconductor material figures of merit are also proposed. The wide bandgap materials based power devices benefits for power density are explored compared to the silicon material power devices.
Secondly, the high temperature operation characteristics of power semiconductor devices have been presented that benefit the power density. The electrical characteristics and thermal stabilities are tested and analyzed, which include the avalanche breakdown voltage, leakage current variation with junction temperature rise. To study the thermal stability of power device, the closed loop thermal system and stability criteria are developed and analyzed. From the developed thermal stability criterion, the maximum switching frequency can be derived for the converter system design. The developed thermal system analysis approach can be extended to other Si devices or wide bandgap devices. To fully and safely utilize the power devices the junction temperature prediction approach is developed and implemented in the system test, which considers the parasitic components inside the power MOSFET module when the power MOSFET module switches at hundreds of kHz. Also the thermal stability for pulse power application characteristics is studied further to predict how the high junction temperature operation affects the power density improvement.
Thirdly, to develop high frequency high power devices for high power high density converter design, the basic approaches are paralleling low current rating power MOSFETs or series low voltage rating IGBTs to achieve high frequency high power output, because power MOSFETs and low voltage IGBTs can operate at high switching frequency and have better thermal handling capability. However the current sharing issues caused by transconductance, threshold voltage and miller capacitance mismatch during conduction and switching transient states may generate higher power losses, which need to be analyzed further. A current sharing control approach from the gate side is developed. The experimental results indicate that the power MOSFETs can be paralleled with proper gate driver design and accordingly the switching losses are reduced to some extent, which is very useful for the switching loss dominated high power density converter design.
The gate driving design is also important for the power MOSFET module with parallel dice inside thus increased input capacitance. This results in the higher gate driver power loss when the traditional resistive gate driver is implemented. Therefore the advanced self-power resonant gate driver is investigated and implemented. The low gate driver loss results in the development of the self-power unit that takes the power from the power bus. The overall volume of the gate driver can be minimized thus the power density is improved.
Next, power semiconductor device series-connection operation is often used in the high power density converter to meet the high voltage output such as high power density boost converter. The static and dynamic voltage balancing between series-connected IGBTs is achieved using a hybrid approach of an active clamp circuit and an active gate control. A Scalable Power Semiconductor Switch (SPSS) based on series-IGBTs is developed with built-in power supply and a single optical control terminal. An integrated package with a common baseplate is used to achieve a better thermal characteristic. These design features allow the SPSS unit to function as a single optically controlled three-terminal switching device for users. Experimental evaluation of the prototype SPSS shows it fully achieved the design objectives. The SPSS is a useful power switch concept for building high power density, high switching frequency and high voltage functions that are beyond the capability of individual power devices.
As conclusions, in this dissertation, the above-mentioned issues and approaches to develop high density power converter from power semiconductor devices standpoint are explored, particularly with regards to high frequency high temperature operation. To realize such power switches the related current sharing, voltage balance and gate driving techniques are developed. The power density potential improvements are investigated based on the real high density power converter design. The power semiconductor devices effects on power density are investigated from the power device figure of merit, high frequency high temperature operation and device parallel operation points of view. / Ph. D.
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Automating Telemetry Tracking Systems Operational TestsPedroza, Moises 10 1900 (has links)
International Telemetering Conference Proceedings / October 22-25, 2001 / Riviera Hotel and Convention Center, Las Vegas, Nevada / Automating Telemetry Tracking Systems Operational Readiness Tests is a concept that
was introduced at White Sands Missile Range in the early 1980’s. The idea was to
determine the condition of a Telemetry Tracking System in a reliable manner in a short
time as possible. A series of RF and Servo Tests designed to determine the condition of a
Telemetry Tracking System was implemented using HP BASIC.
The latest personal computers are faster and have more storage capacity plus the
capability to be programmed in higher level languages such as C/C++ and LabView. This
technology makes it easier to automate system tests. Many of these tests need to be
conducted just prior to supporting a mission. Some tests are required to be performed on
mobile systems after moving the system from one location to another, especially if the
move was over long distances and rugged terrain. Tests such as G/T are conducted before
each mission because it yields accurate information on the Figure of Merit, or, System
Sensitivity. Noise Figure Measurements are more difficult to perform to determine the
System Sensitivity since modern RF Subsystems have pre-amplifiers with Noise Figures
of less than 1.0 dB.
The “down-sizing” of personnel increases the possibility of failure in mission support
scenarios due to the many critical readiness tests needed to assess the Telemetry Tracking
Systems. Also, conventional test methods can be time consuming and are subject to
human error.
This paper describes four critical tests that have been automated to improve reliability of
the test data and decrease the amount of time required to conduct the tests. The “C/C++”
language was used to write the automation programs. More tests will be automated later.
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Estudo experimental da otimização em sistemas de mamografia digital CR e DR / Experimental study of optimization in CR and DR digital mammography systemsPerez, Alessandra Maia Marques Martinez 29 January 2015 (has links)
A recente inserção e forte avanço da mamografia digital no Brasil como ferramenta de rastreamento do câncer mamário e as evidências de outras condições de otimização, quando comparadas à mamografia convencional (tela filme), requerem que novos parâmetros de qualidade sejam incluídos e estudados, bem como que as condições de otimização sejam revistas. O objetivo deste trabalho foi determinar a técnica radiográfica otimizada para dois sistemas de detecção (CR e DR) em uso em três unidades de mamografia: Mammomat 3000 Nova (Siemens), Senographe DMR (GE) e Senographe 2000D (GE). A otimização foi conduzida para uma variedade de combinações de fatores técnicos e configurações de simuladores de mama, tais como valores de kilovoltagem (26 a 32 kV), combinações anodo/filtro (Mo/Mo, Mo/Rh e Rh/Rh), material simulador de mama de várias espessuras (2 a 8 cm) e lesões simuladas como massas e calcificações, usando uma figura de mérito (FOM) como parâmetro. Verificou-se que o uso da combinação anodo/filtro que gera os espectros mais energéticos em cada equipamento proporcionou os maiores valores de FOM para todas as espessuras de simulador de mama e voltagens, devido a redução da dose. As combinações anodo/filtro que deram esses resultados foram Mo/Rh para o equipamento da marca Siemens e Rh/Rh para ambos os equipamentos da marca GE, correspondentes aos espectros mais energéticos de cada unidade. Foi observada ainda uma tendência de aumento do kV que maximiza FOM com o aumento da espessura. / The recent introduction and intense advance of digital mammography in Brazil as a tool in breast cancer screening and the evidences of new optimization conditions when compared to conventional mammography (screen-film) require adding and studying novel quality parameters, as well as revisiting optimization conditions. The objective of this work was to determine optimized radiographic technique for two detection systems (CR and DR) in use in three mammography units: Mammomat 3000 Nova (Siemens), Senographe DMR (GE) and Senographe 2000D (GE). Optimization was conducted for various combinations of technique factors and breast phantom configurations, such as kilovoltage settings (26 to 32 kV), target/filter combinations (Mo/Mo, Mo/Rh and Rh/Rh), breast equivalent material in various thicknesses (2 to 8 cm) and simulated mass and calcification lesions, using a figure of merit (FOM) as a parameter. When using anode/filter combination which generates higher energy spectra in each equipment, it was verified that higher FOM values were achieved for all voltages and phantom thicknesses, due to dose reduction. Anode/filter combinations which led to those results were Mo/Rh for Siemens equipment and Rh/Rh for both GE equipments, corresponding to the higher energy spectra in each unity. It was also observed an increasing tendency of kV which maximizes FOM with the increase of thickness.
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Implementação computacional de um novo método matricial para a determinação de fases em cristalografia / Computational implementation of a new matricial method for phase determination in crystallographyCastellano, Gabriela 25 March 1994 (has links)
Um novo critério, proposto por Jorge Navaza a partir de considerações teóricas para resolver o problema das fases, é avaliado numericamente. Este critério se baseia na propriedade de atomicidade da função densidade eletrônica, generalizando resultados obtidos por Goedkoop. O problema das fases é resolvido teoricamente pela minimização de uma função, R, que é formada pela soma dos menores autovalores de uma matriz, Q, construída a partir de todos os fatores de estrutura observados. O conjunto de fases procurado é aquele que minimiza R. Como a matriz Q depende em forma relativamente complexa do grupo de simetria espacial do cristal, teoria dos grupos é utilizada para reduzir a ordem desta matriz. O algoritmo e a implantação computacional do cálculo da função R, juntamente com testes numéricos que demonstram a utilidade do critério de Navaza, são descritos em detalhe. Como corolário, que pode talvez resultar de grande importância prática, é mostrado que a função R pode ser utilizada como uma nova figura de mérito nos métodos diretos por multissolução clássicos. Finalmente, é desenvolvida a álgebra correspondente ao cálculo do gradiente da função R, indicando a direção de trabalhos futuros / A new criterion, proposed by Jorge Navaza from theoretical considerations to solve the Phase Problem, is numerically tested. The criterion is based on the atomicity property of the electron density function, generalizing previous results by Goedkoop. The Phase Problem is theoretically solved by the minimization of a function, R, which is formed from the sum of the smallest eigenvalues of a matrix Q, constructed from the set of all observed structure factors. The sought set of phases is that which minimizes R. Because the matrix Q depends in a relatively complex fashion on the space group of the crystal, group theory is employed to reduce the order of Q. The algorithm and computational implementation for the calculation of R, together with numerical tests which demonstrate the usefulness of Navaza´s criterion, are described in detail. As a corollary, that might turn out to be of a practical importance, it is shown that the minimum value of the function R can be used as a novel Figure of Merit in the classical Multisolution Direct Methods. Finally, the rather complex algebra necessary for the calculation of the gradient of the function R is developed, indicating also the possible trends for future work
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Nanolaminated Thin Films for ThermoelectricsKedsongpanya, Sit January 2010 (has links)
<p>Energy harvesting is an interesting topic for today since we face running out of energy source, a serious problem in the world. Thermoelectric devices are a good candidate. They can convert heat (i.e. temperature gradient) to electricity. This result leads us to use them to harvest waste heat from engines or in power plants to generate electricity. Moreover, thermoelectric devices also perform cooling by applied voltage to device. This process is clean, which means that no greenhouse gases are emitted during the process. However, the converting efficiency of thermoelectrics are very low compare to a home refrigerator. The thermoelectric figure of merit (ZT<sub>m</sub>) is a number which defines the converting efficiency of thermoelectric materials and devices. ZT<sub>m</sub> is defined by Seebeck coefficient, electrical conductivity and thermal conductivity. To improve the converting efficiency, nanolaminated materials are good candidate.</p><p> </p><p>This thesis studies TiN/ScN artificial nanolaminates, or superlattices were grown by reactive dc magnetron sputtering from Ti and Sc targets. For TiN/ScN superlattice, X-ray diffraction (XRD) and reciprocal space map (RSM) show that we can obtain single crystal TiN/ScN superlattice. X-ray reflectivity (XRR) shows the superlattice films have a rough surface, supported by transmission electron microscopy (TEM). Also, TiN/ScN superlattices grew by TiN as starting layer has better crystalline quality than ScN as starting layer. The electrical measurement shows that our superlattice films are conductive films.</p><p> </p><p>Ca-Co-O system for inherently nanolaminated materials were grown by reactive rf magnetron sputtering from Ca/Co alloy target. The XRD shows we maybe get the [Ca<sub>2</sub>CoO<sub>3</sub>]<sub>x</sub>CoO<sub>2</sub> phase, so far. The energy dispersive X-ray spectroscopy (EDX) reported that our films have Al conmination. We also discovered unexpected behavior when the film grown at high temperature showed larger thickness instead of thinner, which would have been expected due to possible Ca evaporation. The Ca-Co-O system requires further studies.</p>
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