O tratamento de águas residuárias e efluentes industriais por irradiação com feixe de elétrons é uma técnica promissora, porém pouco difundida em território Brasileiro. O projeto e a construção de uma unidade móvel contendo um acelerador industrial de elétrons de 700 keV e 20 kW, pelo Instituto de Pesquisas Energéticas e Nucleares (IPEN), é inovador para demonstrar os efeitos e resultados positivos dessa tecnologia. O propósito é deslocar a unidade móvel às diversas empresas com interesse em tratamento dos resíduos líquidos, conectar-se ao sistema elétrico da mesma e iniciar o processo de tratamento por ionização, por meio da irradiação com feixe de elétrons. A conexão da unidade móvel ao sistema elétrico local pode representar um desafio, pela grande diversidade de tensões e distâncias envolvidas, e também pelas grandes injeções de conteúdo harmônico gerado pelo acelerador de elétron que podem afetar as cargas do sistema industrial, comumente sensíveis. Neste trabalho realizou-se uma análise do sistema de potência da unidade móvel, quanto à capacidade de interrupção, seletividade da proteção e níveis de curto-circuito adequados de forma a assegurar uma maior confiabilidade na operação. Ao final, projetou-se e construiu-se o painel elétrico de controle da unidade móvel de irradiação. Além disso, na obtenção de parâmetros operacionais à unidade móvel, realizaram-se simulações e medições no acelerador industrial de elétrons de 1,5 MeV e 37,5 kW, instalado no Laboratório de Fontes Intensas de Radiação, do Centro de Tecnologia das Radiações, as quais demonstraram a necessidade da inserção de um filtro para redução dos índices de distorção nos harmônicos dessa instalação radiativa fixa no IPEN. / The treatment of wastewater and industrial effluents by electron beam irradiation is a promising technique, however, not very widespread in Brazilian territory. The design and a construction of a mobile unit containing an electron beam accelerator of 700 KeV and 20kW, by the Nuclear and Energy Research Institute (IPEN) is innovative to demonstrate the effects and positive results of this technology. The aim is to move the mobile unit to several companies with interest in liquid waste treatment, and connect to the industry electrical system and start the ionization treatment process through electron beam. The mobile unit\'s connection to the local electrical system can be a challenge in behalf of the great diversity of voltages and distances involved, as well as the large injections of harmonic content generated by the electron beam accelerator that can affect sensitive loads in the industrial system. In this work, an analysis was made of the power system of the mobile unit, regarding interruption capacity, selectivity protection and adequate short circuit levels in order to assure a greater reliability in the operation. At the end, the control panel of the mobile unit, simulations and measurements were carried out at the 1.5 MeV and 37.5 kW electron beam accelerator, installed at the Intensive Radiation Technology Center, which demonstrated the necessity of applying of a filter to reduce the measured harmonic distortion.

Neste trabalho, é apresentada uma análise da operação analógica de transistores de múltiplas portas, avaliando a tensão Early, o ganho de tensão em malha aberta, a razão da transcondutância pela corrente de dreno (gm/IDS), a condutância de dreno e, em especial, a distorção harmônica, exibida por estes dispositivos. Ao longo deste trabalho, foram estudados FinFETs, dispositivos de porta circundante (Gate-All-Around GAA) com estrutura de canal gradual (Graded-Channel GC) e transistores MOS sem junções (Junctionless - JL). Inicialmente, foi efetuada a análise da distorção harmônica apresentada por FinFETs com e sem a presença de tensão mecânica biaxial, com diversas larguras de fin (Wfin) e comprimentos de canal (L), quando estes operavam em saturação, como amplificadores de um único transistor. Nesta análise, as não-linearidades foram avaliadas através da extração das distorções harmônicas de segunda e terceira ordens (HD2 e HD3, respectivamente), mostrando que a presença de tensão mecânica tem pouca influência em HD2, mas altera levemente a HD3. Quando os ganhos de tensão em malha aberta dos dispositivos são levados em conta, transistores sem tensão, também chamados de convencionais, mais estreitos apresentam grande vantagem em termos de HD2 em relação aos tensionados. Ainda nesta análise, percebeu-se que HD2 e HD3 de transistores tensionados pioram com a redução da temperatura, especialmente em inversão mais forte. Na seqüência, foi efetuada uma análise de HD3 em FinFETs com e sem tensão mecânica de vários comprimentos e larguras de canal, operando em região triodo e aplicados a estruturas balanceadas 2-MOS, mostrando que presença de tensão mecânica traz pouca influência em HD3, mas reduz a resistência do canal dos dispositivos (RON), o que não é bom em estruturas resistivas, como as avaliadas. Nesta análise, ainda, pode-se perceber uma melhora em HD3 superior a 30 dB ao se incrementar VGT de zero a 1,0 V, em cuja tensão dispositivos mais estreitos apresentam curvas mais lineares que os mais largos. Então, foi estudada a distorção apresentada por transistores GAA e GC GAA operando em regime triodo, aplicados a estruturas 2-MOS, onde se pôde perceber que GC GAAs com maiores comprimentos da região fracamente dopada apresentam vantagem em HD3 em relação aos demais, para valores de VGT superiores a 2 V. Na avaliação destas estruturas em função da temperatura, percebeu-se que, para VGT superiores a 1,1 V, HD3 depende fortemente da temperatura e piora conforme a temperatura diminui. O estudo envolvendo transistores sem junções foi mais focado em seus parâmetros analógicos, comparando-os aos apresentados por dispositivos de porta tripla ou FinFETs. Em inversões moderada e forte, transistores sem junção apresentaram menores valores para gm/IDS em relação a dispositivos de FinFETs polarizados em um mesmo nível de corrente, entretanto, a dependência de gm/IDS com a temperatura em transistores sem junção também foi menor que a apresentada por FinFETs. JL e FinFETs apresentaram comportamentos distintos para a tensão Early e o ganho de tensão em malha aberta em função da temperatura. Estes parâmetros sempre melhoram com o aumento da temperatura em dispositivos JL, enquanto que exibem seu máximo valor em temperatura ambiente em FinFETs. Nas proximidades da tensão de limiar, transistores sem junção com largura de fin de 30 nm exibiram tensão Early e ganho superiores a 80 V a 57 dB, respectivamente, enquanto que FinFETs mostraram Tensão Early de 35 V e ganho de 50 dB. Em todos os estudos efetuados ao longo do trabalho, procurou-se apontar as causas das não-linearidades apresentadas pelos dispositivos, a partir de modelos analíticos que pudessem relacionar a física de funcionamento dos transistores com os resultados experimentalmente obtidos. / In this work it is presented an analysis of the analog operation of multiple gate transistors, evaluating the Early Voltage, the open-loop voltage gain, the transconductance over the drain current ratio (gm/IDS), the drain conductance and, especially, the harmonic distortion exhibited by these devices. Along the work, FinFETs, Gate-All-Around (GAA) devices with the Graded-Channel (GC) structure and MOS transistors without junctions (Junctionless - JL) were studied. Initially, an analysis of the harmonic distortion presented by conventional and biaxially strained FinFETs with several fin widths (Wfin) and channel lengths (L) was performed, when these devices were operating in saturation as single transistor amplifiers. In this analysis, the non-linearities were evaluated through the extraction of the second and the third order harmonic distortions (HD2 and HD3, respectively), and it was shown that the presence of strain has negligible influence in HD2, but slightly changes HD3. When the open loop voltage gain of the devices is taken into consideration, narrower conventional transistors present a huge advantage with respect to the strained ones in terms of HD2. Also, it was perceived that both HD2 and HD3 of strained FinFETs worsen with the temperature decrease, especially in stronger inversion. In the sequence, an analysis of the HD3 presented by conventional and strained FinFETs of several fin widths and channel lengths operating in the triode regime was performed. These devices were applied to 2-MOS balanced structures, showing that the presence of the strain does not influence significantly the HD3, but reduces the resistance in the channel of the transistors (RON), which is not good for resistive structures as the ones evaluated. In this analysis, it can also be observed an HD3 improvement of 30 dB when VGT is increased from zero up to 1,0 V, where narrower devices present transfer characteristics more linear than the wider ones. Then, it was studied the distortion presented by GAA and GC GAA devices operating in the triode regime, applied to 2-MOS structures. In this case, it could be perceived that GC GAAs with longer lightly doped regions present better HD3 in comparison to the other devices for VGT higher than 2.0 V. In the evaluation of these structures as a function of the temperature, it could be seen that for VGT higher than 1.1 V, HD3 strongly depends on the temperature and worsens as the temperature decreases. The study involving JL transistors was focused on their analog parameters, comparing them to the ones presented by triple gate devices or FinFETs. In moderate and strong inversions, Junctionless showed lower values for gm/IDS with respect to triple gate devices biased at a similar current level. However, the dependence of gm/IDS from Junctionless with the temperature was also smaller than the one presented by FinFETs. Junctionless and FinFETs exhibited distinct behaviors for the Early voltage and the open-loop voltage gain as a function of the temperature. These parameters always improve with the temperature raise in JL devices whereas they exhibit their maximum values around room temperatures for FinFETs. In the proximity of the threshold voltage, Junctionless with fin width of 30 nm presented Early voltage and intrinsic gain larger than 80 V and 57 dB, respectively, whereas FinFETs exhibited Early voltage of 35 V and gain of 50 dB. For all the studies performed in this work, the probable causes of the non-linearities were pointed out, from analytic models that could correlate the physical work of the devices with the experimental results.

Orientador: Falcondes José Mendes de Seixas / Resumo: Os conversores multipulsos têm sido muito utilizados para a melhoria da qualidade de energia elétrica em sistemas de retificação trifásicos. O principal motivo para tal afirmação é a robustez apresentada por esses conversores, aliada às características intrínsecas da estrutura, que resulta no cancelamento natural de certas componentes de corrente na rede, devido ao defasamento angular provocado pela ação do transformador ou autotransformador utilizado. O que se propõe nesse trabalho é a substituição de cada ponte retificadora a diodos, presente no conversor de 12 pulsos, por uma topologia retificadora trifásica semicontrolada, baseada no conversor boost operando no modo de condução descontínuo (MCD), de modo que, seja possível reduzir de maneira significativa a DHTi (Distorção Harmônica Total de corrente), bem como, incorporar os volumosos transformadores de interfase (IPTs) aos indutores boost de alta frequência, resultando na redução de peso e volume. Foram confeccionadas duas versões do conversor de 12 pulsos com retificadores semicontrolados, uma utilizando transformador isolador e a outra um autotransformador. O que se verificou para ambas as configurações é que a estrutura apresenta um reduzido conteúdo harmônico de corrente se comparado ao conversor tradicional e que, ao se operar no modo de condução descontínuo, faz-se possível o emprego de uma lógica de controle simples, possibilitando assim empregar somente uma malha de tensão, e reduzir significativamente a DHTi do... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: Multipulse converters have been widely employed for electrical power quality improvement in three-phase rectifiers systems. The main reason for this statement is the robustness shown by these structures, allied to their natural characteristics, resulting in harmonic canceling at the mains, due to the phase displacement provided by the transformer/autotransformer. In this work, it is proposed the replacement of each rectifier bridge, present in the 12-pulse converter, by a three-phase half-controlled rectifier topology, based on DCM (Discontinuous Conduction Mode) boost converter, thus making it possible to significative reduce the THDi (Total Harmonic Distortion) of the current injected on the mains by the structure. It also incorporates the voluminous IPT's (Interphase Transformer) in the boost high-frequency inductor, resulting in a reduction of weight and size. Two versions of the 12-pulse converter with semicontrolled rectifiers were made, one using an isolating transformer and other using an autotransformer. It was verified that both configurations present a reduced THDi when compared to the traditional converter. So, by electing DCM, it is possible to employ a simpler control logic, employing only one voltage loop and significantly reducing the THDi. / Doutor

Ce mémoire présente la conception, la réalisation et la caractérisation d'un micro-haut-parleur en silicium destiné à des applications électroniques portables, telles que les tablettes et les téléphones cellulaires. L'objectif est d'évaluer le potentiel des microtechnologies pour améliorer la qualité sonore et le rendement électroacoustique, qui sont deux points faibles majeurs des micro-haut-parleurs actuels.En analysant les paramètres dont dépendent le rendement et la qualité sonore, nous montrons que le silicium monocristallin présente des propriétés particulièrement intéressantes pour réaliser la surface émissive et la suspension du transducteur. Une microstructure de la partie mobile est proposée pour satisfaire la double exigence d'une surface émissive très rigide, nécessaire à la qualité sonore, et d'une masse très faible, permettant d'augmenter le rendement. Les aimants et la bobine, qui constituent le moteur électrodynamique, sont également optimisés en utilisant conjointement des modèles analytiques et à éléments finis. La microfabrication du transducteur MEMS est étudiée, étape par étape. Elle repose sur l'utilisation d'un substrat SOI (silicium sur isolant), qui sert de base à la structuration des différents composants, et sur lequel sont rapportés des aimants massifs. La caractérisation électroacoustique des échantillons réalisés montre une très bonne qualité de reproduction sonore. Un niveau sonore de 80 dB à 10 cm est obtenu pour une puissance électrique de 0,5 W, ce qui place le rendement au niveau des micro-haut-parleurs du marché. Ces travaux montrent en outre que les technologies MEMS offrent des possibilités d'augmenter très largement le rendement. / This research work presents the conception, the development, and the characterization of a silicon-based microspeaker for portable electronic device applications, such as tablets and cellular phones. The objective is to investigate the potential of microsystem technologies with the goal of improving the sound quality and the electroacoustic efficiency, which are two main drawbacks of the today’s microspeakers.By analyzing various parameters which influence the efficiency and the sound quality, we show that the monocrystalline silicon has very interesting mechanical properties which make it the proper choice to be deployed for the membrane as well as the suspension of the transducer.A stiffening structure is proposed to satisfy both the rigidity and the lightness of the membrane, for the sake of sound quality and high efficiency respectively. The magnets and the coil, which compose the electromagnetic motor of the device, are also optimized with the help of analytical and finite element models.Afterwards, the microfabrication of the MEMS microspeaker is studied step by step. It is indeed based on a SOI (silicon on insulator) substrate which makes possible the micromachining of the different parts and the assembly of bulk permanent magnets. The electroacoustic characterization of the MEMS microspeaker samples shows a very high sound quality. A sound pressure level of 80 dB at 10 cm is measured for an electrical power of 0.5 W. This classifies the MEMS microspeaker’s efficiency among that of today’s non-MEMS microspeakers.This work presents, moreover, the possibility of increasing even more the efficiency thanks to the MEMS technology.

Este trabalho consiste em apresentar o desenvolvimento de um Smart meter, integrado a um analisador de qualidade de energia, para análise de distorções harmônicas, utilizando método de redes neurais artificiais embarcado em hardware. Tal Smart meter está incluído dentro dos conceitos de Smart Grid, que serão apresentados também neste trabalho. O intuito do desenvolvimento do Smart meter para análise de distorções harmônicas é auxiliar concessionárias de energia elétrica a identificar que tipo de carga o consumidor utiliza em sua residência, a fim de contribuir para a tomada de decisões apropriadas, tais como a diminuição da emissão de correntes harmônicas, demanda de energia, detecção de falhas no fornecimento de energia elétrica e faturas diferenciadas de acordo com a quantidade de harmônicas injetadas na rede elétrica. Adicionalmente, observou-se que o Smart meter desenvolvido pode ser ainda utilizado para detectar fenômenos de VTCD, como elevação, afundamento e interrupção de energia. Todo o processo de desenvolvimento do Smart meter é apresentado no decorrer desta tese de doutorado. / This thesis consists to present the development of a Smart Meter integrated to power quality analyzer for the analysis of harmonic distortion, using methods based on artificial neural networks in embedded hardware. This Smart Meter is included within the concepts of Smart Grid, which will be also presented in this work. The intention of the development of the Smart Meter for analysis of harmonic distortion is to assist utilities companies to identify what loads type the consumer uses at your residence in order to contribute for supporting decisions, such as reducing the emission of the harmonic currents, power demand and faults detection in electric energy supply and distinct bills according to the amount of harmonics injected into the power grid. In addition, it was observed that this developed Smart Meter can be even used to detect the VTCD phenomena, such as swell, sag and interruption of the energy supply. All development steps of this Smart Meter is presented in this doctoral thesis.

Esta pesquisa apresenta um estudo investigativo da análise modal aplicada a Sistemas de Distribuição (SDs) frente às distorções harmônicas, no contexto da Qualidade da Energia Elétrica (QEE). A partir do método de análise da ressonância modal, foi conduzido um estudo investigativo para apontar quais barramentos são mais sensíveis e permitem uma melhor observação frente às distorções harmônicas. Vale adiantar que o método de análise de ressonância modal, o qual é fundamentado na decomposição espectral da matriz de admitância do sistema elétrico, já apresenta interessantes trabalhos voltados para sistemas de transmissão. O desafio desta pesquisa foi então investigar a sua aplicação para SDs com um direcionamento às distorções harmônicas, bem como ao seu monitoramento. Dentre os resultados encontrados no desenvolvimento da pesquisa, destaca-se um melhor entendimento do problema das distorções harmônicas, o qual permitiu evidenciar a sensibilidade e a observabilidade dos SDs testes frente ao problema definido no contexto da QEE. / This research presents an investigative study of the modal analysis applied to Distribution Systems (DSs) in the context of Power Quality (PQ) considering the harmonic distortions. From the modal resonance analysis, an investigative study was conducted to indicate which bus bars are more sensitive and allow better observation in face of harmonic distortions. It is worth mentioning that the method of modal resonance analysis, which is based on the spectral decomposition of the admittance matrix of the electric system, already presents interesting applications focused on transmission systems. The challenge of this research was to investigate its application to DSs focusing on harmonic distortions, as well as their monitoring. Among the observed results of the research development, a better understanding of the harmonic distortions problem was achieved, which made it possible to highlight the sensitivity and observability of the DSs tests against the problem defined in the context of the PQ.

The design of power amplifiers within a circuit simulator requires a good non-linear model that accurately predicts the electormagnetic behaviour of the power transistor. In recent years, a certain class of large signal frequency-dependent black-box behavioural modeling techniques known as Poly-Harmonic Distortion (PHD) models has been devised to mimic the non-linear unmatched RF transistor. These models promise a good prediction of the device behaviour under multi-harmonic periodic continuous wave inputs. This thesis describes the capabilities of the PHD modeling framework and the theoretical type of behaviour that it is capable of predicting. Specifically, the PHD framework cannot necessarily predict the response of a broadband aperiodic signal. This analysis will be performed by deriving the PHD modeling framework as a simplification of the Volterra series kernel functions under the assumption that the power transistor is operating under continuous periodic multi-harmonic voltage and current signals in a stable circuit. A PHD model will be seen as a set of describing functions that predict the response of the Device Under Test (DUT) for any given non-linear periodic continuous-wave inputs that have a specific fundamental frequency. Two popular implementations of PHD models that can be found in the literature are the X-parameter and Cardiff models. Each model formulates the describing functions of the general PHD model differently. The mathematical formulation of the X-parameter and Cardiff models will be discussed in order to provide a theoretical ground for comparing their robustness. The X-parameter model will be seen as the first-order Taylor series approximation of the PHD model describing functions around a Large Signal Operating Point (LSOP) of the device under test. The Cardiff large-signal model uses Fourier series coefficient functions that vary with the magnitude of the large signal(s) as the PHD model describing functions. This thesis will provide a breakdown of the measurement procedure required for the extraction of these models, the challenges involved in the measurement, as well as the mathematical extraction of the model coe cients from measurement data. As each of these models contain have extended versions that enhance the predictive capability of the model under stronger nonlinear modes of operation, a comparison is used to represent the cost of increasing model accuracy as a function of the increasing model complexity for each model. The order of complexity of each model can manifest itself in terms of the mathematical formulation, the number of parameters required and the measurement time that is required to extract each model for a given DUT. This comparison will fairly assess the relative strengths and weaknesses of each model.

This thesis applies digital repetitive control to a single-phase DC-to-AC converter, with some proposed designs to improve stability and enhance performance of the converter under various load variations. A practical DC-to-AC converter is required to convert DC power to stable AC power with low harmonic distortion when attached to various linear or nonlinear loads. This thesis combines repetitive control with feedback dithering modulation and optimal state feedback to control the converter. The repetitive control is responsible for regulating output power and eliminating harmonics, while the feedback dithering modulation for switching the power transistors with reduced switching noise and the state feedback for stabilizing the converter under various load variations. The presented control and modulation schemes of the power converter are implemented on an FPGA (Field Programmable Gate Array). The experiments confirm the excellent performance and robustness of the converter, indicating a total harmonic distortion of less than 0.5% for the converter when attached to various linear or nonlinear loads.

This research work is devoted to the design, development and implementation of a Current Source Converter (CSC) based Active Power Filter (APF) for Medium Voltage (MV) applications. A new approach has been proposed to the design of the CSC based APF for reducing the converter kVA rating considerably. This design approach is called the Selective Harmonic Amplification Method (SHAM), and is based on the amplification of some selected harmoniccurrent components of the CSC by the input filter, and the CSC control system, which is specifically designed for this purpose. The proposed SHAM has been implemented on the first industrial CSC based APF for the elimination of 11th and 13th current harmonics of 12-pulse rectifiers fed from Medium Voltage (MV) underground cables in order to comply with IEEE Std. 519-1992. 450 kVA rated APF with only 205 kVA CSC rating has been connected to the MV bus via a coupling transformer of 600kVA, 34.5/1.1 kV. The power stage of the CSC based APF is composed of water-cooled high voltage IGBT and diode modules. Reference currents to be generated by the CSC are obtained by the use of a selective harmonic extraction method, by mploying synchronously rotating reference frames for each selected harmonic component. An Active damping method is also used to suppress the oscillations around the natural frequency of the input filter, excluding the harmonic components to be eliminated by APF. Simulation and field test results have shown that SHAM can successfully be applied to a CSC based APF for reduction of converter kVA rating, thus making it a cost- competitive alternative to voltage source converter based APFs traditionally used in industry applications.

Στην παρούσα διπλωματική εργασία πραγματοποιείται μελέτη της επίδρασης ενός συστήματος διασύνδεσης ανεμογεννήτριας με το δίκτυο μέσης τάσης, όσον αφορά την έγχυση αρμονικών από την ανεμογεννήτρια προς το δίκτυο. Η μελέτη περιλαμβάνει τη μοντελοποίηση κάθε τμήματος ενός δικτύου μέσης τάσης με πραγματικά στοιχεία που πάρθηκαν από τη ΔΕΗ. Επιπλέον, μοντελοποιείται μια ανεμογεννήτρια τύπου σύγχρονης μόνιμων μαγνητών, καθώς και όλοι οι ηλεκτρονικοί μετατροπείς ισχύος που απαιτούνται για τη διασύνδεση αυτής με το δίκτυο μέσης τάσης. Όλα τα επιμέρους μοντέλα διασυνδέονται μεταξύ τους ώστε να αποτελέσουν το συνολικό μοντέλο που περιλαμβάνει το δίκτυο μέσης τάσης με τις γραμμές μεταφοράς, τους μετασχηματιστές, τα φορτία και τους πυκνωτές αντιστάθμισης που διαθέτει και την ανεμογεννήτρια μαζί με τους μετατροπείς συνδεδεμένη σε ένα ζυγό του δικτύου. Από το μοντέλο αυτό εξάγεται το αρμονικό περιεχόμενο τόσο στο ζυγό της ανεμογεννήτριας όσο και σε διπλανούς ζυγούς και συγκρίνεται κάθε φορά με το πρότυπο IEC 61000-3-6 που θέτει τα όρια για την έγχυση αρμονικών στο δίκτυο μέσης τάσης. Αρχικά, γίνεται μια αναφορά στα πλεονεκτήματα της αιολικής ενέργειας έναντι των άλλων συμβατικών μορφών ενέργειας. Επιπλέον, αναφέρονται τα προβλήματα που δημιουργούνται από την παρουσία ανώτερων αρμονικών στο δίκτυο. Έπειτα, πραγματοποιείται θεωρητική ανάλυση κάθε τμήματος του δικτύου μέσης τάσης. Για κάθε τμήμα δημιουργείται, επίσης, ένα μοντέλο στο Matlab/Simulink που βασίζεται σε στοιχεία από τη ΔΕΗ και εξισώσεις που αφορούν το εκάστοτε τμήμα. Στη συνέχεια, αναλύεται και μοντελοποιείται στο Matlab/Simulink και κάθε τμήμα του συστήματος διασύνδεσης της ανεμογεννήτριας με το δίκτυο μέσης τάσης που περιλαμβάνει την ανεμογεννήτρια τύπου σύγχρονης μόνιμων μαγνητών, ανορθωτική διάταξη, μετατροπέα συνεχούς τάσης σε συνεχή, τριφασικό αντιστροφέα, φίλτρο και μετασχηματιστή. Για κάθε μετατροπέα αναλύεται και μοντελοποιείται και έλεγχος κλειστού βρόχου. Τέλος, τα επιμέρους μοντέλα συγκροτούνται σε ένα συνολικό μοντέλο. Μεταβάλλοντας το συντελεστή φόρτισης των μετασχηματιστών του δικτύου, το συντελεστή ισχύος και το πλήθος των ανεμογεννητριών που συνδέονται στον ίδιο ζυγό, εξάγεται το αρμονικό περιεχόμενο για διάφορους ζυγούς και ελέγχεται αν αυτό συμφωνεί με το πρότυπο IEC 61000-3-6. Επιπλέον, εξετάζεται το αρμονικό περιεχόμενο της τάσης, όταν ο ζυγός διασύνδεσης αλλάζει θέση μέσα στο υπό μελέτη δίκτυο, καθώς και όταν αλλάζει η ταχύτητα του ανέμου. / In the present diploma thesis a study of the effect of a wind turbine system interconnection with medium voltage grid is conducted, in terms of harmonic injection of the turbine to the grid. The study includes the modeling of each part of a medium voltage grid with actual data taken from the Public Power Corporation of Greece. Furthermore, a synchronous wind turbine with permanent magnets is modeled along with all the electronic power converters that are required for the interconnection with the medium voltage grid. All the individual models are connected together to form the overall model, including the medium voltage transmission lines, transformers, loads and their compensation capacitors, along with the wind turbine and the power converters. The wind turbine is connected in a bus of the medium voltage grid. Then, the harmonic content in both the bus of the wind turbine and in other buses of the grid is extracted and compared with the standard IEC 61000-3-6 that sets the limits for harmonic injection in medium voltage grid. Initially, the advantages of use of wind energy are mentioned compared to other conventional forms of energy. Furthermore, the problems caused by the presence of harmonics in the grid are discussed. A theoretical analysis of each section of the medium voltage grid is conducted. For each section, a model in Matlab / Simulink is also created, based on data from the Public Power Corporation of Greece and on equations related to each section. Then, every part of the system connecting the wind turbine to the medium voltage grid is analyzed and modeled in Matlab/Simulink. This system consists of a synchronous wind turbine with permanent magnets, DC-to-DC converter, three-phase inverter, filter and transformer. A closed loop control for each converter is also analyzed and modeled. Finally, the aforementioned models are built up into one single model. By varying the load factor of the grid transformers, the power factor and the number of wind turbines connected to the same bus, the harmonic content of various buses is extracted and checked if it complies with the standard IEC 61000-3-6. Moreover, the harmonic content of the voltage is calculated, when the system of wind turbine changes position in the present medium voltage grid, as well as when the wind speed is changed.