No description available.

In this thesis a variety of topics concerning 2D materials that have been separated from bulk layered crystals are discussed. Throughout the thesis, single and few layers of graphene, fluorinated graphene, MoS2 and WS2 are used. Two new methods of freely suspending 2D materials are presented as well as a method of removing the background from optical images. This aids contrast measurements for the determination of the number of layers. Fluorinated graphene is found to be sensitive to beta radiation; the resistance of fluorinated graphene transistors is shown to decrease upon exposure to the radiation. This happens due to the carbon-fluorine bond breaking. The sp3 hybridised structure of the fluorinated graphene is reduced back into the sp2 hybridised structure of pristine graphene. The superconducting properties of molybdenum-rhenium are characterised. It is shown to have a transition temperature of 7.5 K. It is also discovered that the material has a resistance to hydrofluoric acid; the acid etches nearly all other superconducting materials. This makes MoRe a possible candidate to explore superconductivity in conjunction with high mobility suspended graphene. To see if the material is compatible with graphene, a supported Josephson junction is fabricated. A proximity induced super current is sustained through the junction up to biases of ∼ 200 nA. The temperature dependence of the conductivity is measured for both suspended MoS2 and WS2 on a hexagonal boron nitride substrate. The dominant hopping mechanism that contributes to the conductivity at low temperatures is found to be Mott variable range hopping, with the characteristic T−1/3 dependence. The hopping transport is due to impurities that are intrinsic to the crystals, this is confirmed by comparing the results with those of supported devices on SiO2.

Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by twodimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNiO3 superlattices can be tuned via the thickness of the insulating LaAlO3 layers.

Electrical transport in undoped and Ni-, Cr-, and W-doped TiO2 thin films on SrTiO3(001) is modelled either with the sum of two thermally activated processes with exponential temperature dependence of conductivity, or with the sum of three-dimensional Mott variable-range hopping (VRH) and an activated process with low activation energy. The latter is interpreted for both models as small polaron hopping (<θD/4). According to reduced chi-square values, the double activated model is superior for data of higher ordered films grown at 540 and 460 °C. For lower growth temperature, VRH plus activated conductivity fits partly better. For all dopants, n-type conductivity is observed.

No description available.

The development of new electronic devices requires the design of novel materials since the existing technologies are not suitable for all applications. In recent years, semiconducting polymers (SCPs) have evolved as fundamental components for the next generation of costumer electronics. They provide interesting features, especially flexibility, light weight, optical transparency and low-cost processability from solution. The research presented in this thesis was devoted to theoretical studies of donor-acceptor (DA) copolymers formed by electron-deficient 3,6-(dithiophene-2-yl)-diketopyrrolo[3,4-c]pyrrole (TDPP) and different electron-rich thiophene compounds. This novel type of SCPs has received a lot of attention due to experimental reports on very good electronic properties which yielded record values for organic field-effect transistor applications. In order to get a deeper understanding of the structural and electronic properties, the main objective of this work was to study this material type on the atomic scale by means of electronic structure methods. For this, density functional theory (DFT) methods were used as they are efficient tools to consider the complex molecular structure. This work comprises three main parts: a comparative study of the structural and the electronic properties of TDPP based DA polymers obtained by means of different theory levels, the calculation of the intermolecular charge transfer between pi-pi stacked DA polymer chains based on the Marcus transfer theory and investigations of molecular p-doping of TDPP based DA polymers. For the first, DFT using different functionals was compared to the density functional based tight binding (DFTB) method, which is computationally very efficient. Although differences in structural properties were observed, the DFTB method was found to be the best choice to study DA polymers in the crystalline phase. For the second, correlations between the molecular structure and the reorganization energy are found. Moreover, the dependency of the electronic coupling element on the spatial shape of the frontier orbitals is shown. Furthermore, a Boltzmann-type statistical approach is introduced in order to enable a qualitative comparison of different isomers and chemical structures. For the last part, the p-doping properties of small, multi-polar dopant molecules with local dipole provided by cyano groups were investigated theoretically and compared with experimental observations. The one with the strongest p-doping properties was studied in this work for the first time on a theoretical basis. Comparing these different p-dopants, rich evidence was found supporting the experimentally observed doping strength.

No description available.

Selbstorganisierte InAs Nanostrukturen in InP, wie Quantendrähte, Quantenpunkte, und Quantengräben als Referenz, werden bezüglich ihres Wachstums, ihrer Struktur, optischen Eigenschaften und Transporteigenschaften untersucht. Das Stranski-Krastanov Wachstum der Nanostrukturen auf exakt orientiertem und vizinalem InP(001) wird mittels Gasquellen-Molekularstrahlepitaxie untersucht. Ich zeige, dass die Missorientierung des vizinalen InP, weitestgehend unabhängig von den Wachstumsparametern, den Nanostrukturtyp definiert. Optische Polarisation der Interbandübergänge (im 1.55 Mikrometer Bereich) aufgrund des Nanostrukturtyps wird mittels Photolumineszenz- und Transmissionsspektroskopie wird nachgewiesen. Die experimentell unaufwändige 4-Kontakt van der Pauw Hall Messung wird erweitert, um anisotrope Transporteigenschaften zu bestimmen. Der Ladungstägertransport in einer Schicht dicht gepackter, lateral gekoppelter InAs Nanostrukturen ist stark anisotrop mit der Hochbeweglichkeitsrichtung [-110], was parallel zur Richtung der Quantendrähte ist. Die maximalen Anisotropien übersteigen 30 für Elektronen und 100 für Löcher. Die extreme Anisotropie im Falle der Löcher basiert auf diffusem Transport in der [-110], und Hoppingtransport in der [110] direction. Die Elektronenbeweglichkeit bei niedrigen Temperaturen wird duch Grenzflächenrauhigkeitsstreuung in der [110] direction, und Streuung an entfernten Störstellen in der [-110] dominiert. Im Kontext gekoppelter Nanostrukturen, zeige ich, dass die Transportanisotropie auf anisotroper Tunnelkopplung zwischen benachbarten Nanostrukturen beruht, und weniger durch die Form der Nanostruktur bestimmt wird. Transport im Quanten-Hall Regime, und die Schwache Lokalisierung werden untersucht. Ein neuartiges Baulelement basierend auf Gate-konrollierter Transportanisotropie wird vorgeschlagen. Es wird gezeigt, dass modulationsdotierte InAs Quantendrähte für eine Implementierung des Bauelements geeignet sind. / Self-assembled InAs nanostructures in InP, comprising quantum wires, quantum dots, and quantum wells as reference, are studied in terms of their formation, structural properties, optical properties, and anisotropic transport properties. The Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). I demonstrate that the off-cut direction of vicinal substrates - largely independent of growth conditions - determines the nanostructure type. Optical polarization of the interband transitions (in the 1.55 micron wavelength range) arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement is extended to yield the anisotropic transport properties. The in-plane transport in large ensembles of closely spaced, laterally coupled InAs nanostructures is highly anisotropic with the high-mobility direction [-110], which is parallel to the direction of the quantum wires. The maximum anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport in the [-110], and hopping transport in the [110] direction. The principal electron mobilities at low temperature are dominated by interface roughness scattering in the [110] direction, and by remote impurity scattering in the [-110] direction. In the context of coupled nanostructure, I demonstrate that the transport anisotropy results from directionally anisotropic tunnel coupling between adjacent nanostructures rather than from the nanostructure shape anisotropy. The Quantum-Hall regime, and the weak-localization contribution to conductivity is studied. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. Modulation-doped InAs/InP quantum wires are demonstrated to be a candidate for implementation of the device.

Les propriétés physico-chimiques d'un nanocristal semi-conducteur sphérique, intermédiaires entre la molécule et le solide, dépendent de sa taille. Empilés ou dispersés, ces nanocristaux sont les briques architecturales de nouveaux matériaux fonctionnels aux propriétés ajustables, en particulier pour l’optoélectronique. Cette thèse s'inscrit dans le développement de ces nouveaux matériaux et présente avant tout une méthodologie pour la simulation du transport électronique dans un solide à nanocristaux en régime de faible couplage électronique appliquée à des nanocristaux de silicium dans une matrice de SiO2 pour les applications photovoltaïques. La cinétique du déplacement des porteurs est liée au taux de transfert tunnel (hopping) entre nanocristaux. Ces taux sont calculés dans le cadre de la théorie de Marcus et prennent en compte l'interaction électron-phonon dont l'effet du champ de polarisation dans la matrice ainsi que les interactions électrostatiques à courte et longue portée. Le calcul des états électroniques (électrons et trous) en théorie k.p associé à l'utilisation de la formule de Bardeen donne au code la capacité, par rapport à la littérature, de fournir des résultats (mobilité ou courant) en valeur absolue. Les résultats de mobilité ainsi obtenus pour des empilements cubiques idéaux viennent contredire les résultats de la littérature et incitent à considérer d'autres matériaux notamment en ce qui concerne la matrice pour obtenir de meilleurs performances. En outre, les résultats de simulation de dispositifs montrent l'impact considérable des électrodes sur les caractéristiques courant-tension. Aussi, un nouvel algorithme Monte-Carlo Cinétique accéléré a été adapté afin de pouvoir reproduire le désordre inhérent à la méthode de fabrication tout en maintenant un temps de simulation raisonnable. Ainsi l'impact du désordre en taille se révèle faible à température ambiante tandis que les chemins de percolation occultent la contribution des autres chemins de conduction. Des résultats de caractérisation comparés aux simulations tendent par ailleurs à indiquer que ces chemins peuvent concentrer les porteurs et exhiber un phénomène de blocage de coulomb. Enfin, la section efficace d'absorption est calculée théoriquement et permet d'obtenir le taux de génération sous illumination qui se révèle proche du silicium massif. Et une méthode en microscopie à sonde de Kelvin est décrite pour caractériser la durée de vie des porteurs c'est-à-dire le taux de recombinaison, les résultats ainsi obtenus étant cohérents avec d'autres techniques expérimentales. / The physicochemical properties of a spherical semiconductor nanocrystal, intermediate between the molecule and the solid depend on its size. Stacked or dispersed, these nanocrystals are building blocks of new functional materials with tunable properties, particularly appealing for optoelectronics. This thesis takes part in the development of these new materials. It mainly presents a methodology for the simulation of electronic transport in nanocrystal solids within the weak electronic coupling regime. It is applied to a material made of silicon nanocrystals embedded in silicon oxide and considered for photovoltaïc applications. The displacement kinetics of charge carriers is related to the tunneling transfer rate (hopping) between nanocrystals. These rates are calculated within the framework of Marcus theory and take into account the electron-phonon interactions, the effect of the bias field and the electron-electron interactions at short and long range. The calculation of electronic states (electrons and holes) in k.p theory associated with the use of Bardeen's formula provides, compared to previous works, results (mobility or current) in absolute terms. The mobility thus computed is far lower than the results of the literature and encourage to consider other materials. Furthermore, the device simulations show the significant impact of the electrodes on the current-voltage characteristics. Also, a new accelerated kinetic Monte-Carlo algorithm has been adapted in order to reproduce the disorder inherent in the manufacturing process while maintaining a reasonable simulation time. Thus the impact of the size disorder is poor at room temperature while the percolation paths shunt the contribution of other conduction paths. Characterization results compared to simulations tend to show that these paths concentrate carriers and exhibit Coulomb blockade phenomenon. Finally, the absorption cross section is calculated theoretically to obtain the generation rate under illumination. It is similar to the bulk silicon one. And a method employing a Kelvin probe microscope is described to characterize the carrier lifetime, namely the recombination rate. The results thus obtained are consistent with other experimental technics.

Quasi-particles formed in lithium niobate after pulse exposure were investigated by transient absorption and photoluminescence spectroscopy as well as numerical simulations. This includes the formation process, the transport through the crystal, interim pinning on defects during the relaxation process, and the final recombination with deep centers. It was shown that the charge-transport through the crystal can be described by a hopping transport including different types of hops between regular or defective lattice sites, i.e., the transport includes a mixture of free and bound small polarons. Furthermore, the different types of hops connected with varying activation energies and their distribution are responsible for an altered temporal decay curve when changing the crystal composition or temperature. Additionally, it was shown that the hitherto accepted recombination model is insufficient to describe all transient absorption and luminescence effects in lithium niobate under certain experimental conditions, i.e., long-living absorption dynamics in the blue/UV spectral range do not follow the typical polaron dynamics and cannot be described under the assumption of charge compensation. However, similar decay characteristics between self-trapped excitons known from photoluminescence spectroscopy and the unexpected behavior of the transient absorption were found leading to a revised model. This includes, besides the known polaron relaxation and recombination branch, a significant role of self-trapped excitons and their pinning on defects (pinned STEs). Since the consideration of further absorption centers in the relaxation path after pulse exposure might result in misinterpretations of previously determined polaron absorption cross-sections and shapes, the necessity to perform a review became apparent. Therefore, a supercontinuum pump-probe experiment was designed and all measurements applied under the same experimental conditions (temperature, polarization) so that one can extract the absorption amplitudes of the single quasi-particles in a spectral range of 0.7-3.0eV. The detailed knowledge might be used to deconvolve the absorption spectra and transform them to number densities of the involved centers which enables one to obtain an easier insight into recombination and decay dynamics of small polarons and self-trapped excitons. As the hopping transport of quasi-particles and the concept of pinned STEs might be fundamental processes, a thorough understanding opens up the possibility of their exploitation in various materials. In particular, results presented herein are not only limited to lithium niobate and its applications; an extension to a wide range of further strongly polar crystals in both their microscopic processes and their use in industry can be considered.