Ce travail se situe dans le cadre d'un projet pluridisciplinaire, visant à utiliser un nouveau mode de stimulation des neurones sensoriels par l'infrarouge (IR) à 1875 nm. Actuellement les prothèses cochléaires et visuelles utilisent la stimulation électrique qui permet certes de visualiser des objets et de suivre une conversation mais avec une résolution qui pourrait certainement être améliorée par un autre mode de stimulation, notamment l'infrarouge. Nous avons d'abord démontré qu'une telle technique était possible dans les cellules ganglionnaires de la rétine ainsi que celles du ganglion de Scarpa (vestibule). Les réponses biologiques obtenues sous forme de variations transitoires de calcium intracellulaire et de potentiel d'action, (enregistrées par les techniques d'imagerie calcique et de patch-clamp) nous ont permis d'approfondir cette étude. En effet, de précédents travaux ont montré la faisabilité de la stimulation optique par IR des nerfs périphériques. Mais le mécanisme à l‟origine de la réponse évoquée par IR dans le tissu biologique n'a jamais été décrit jusqu'ici. Nous décrivons pour la première fois le mécanisme moléculaire qui conduit à la genèse de VVEL (variation de potentiel de membrane évoquée par laser IR). L'élément déclencheur de ce mécanisme au niveau membranaire a été révélé à l'aide d'une approche pharmacologique. Le blocage des canaux-récepteurs thermosensibles de la famille de 'Transient Receptor Potential' (Vanilloides) par le rouge de ruthénium et le RN1734, inhibe les VVELs. Nous démontrons que le mécanisme fait intervenir des canaux sodiques et calciques dépendants du voltage, dont l'activation lors d'une stimulation par l'IR est dépendante de l'ouverture des canaux thermosensibles TRPV4. / Infrared (IR) laser irradiation has been established as an appropriate stimulus for primary sensory neurons under conditions where sensory receptor cells are impaired or lost. Yet, development of clinical applications has been impeded by lack of information about the molecular mechanisms underlying the laser induced neural response. Here, we first demonstrate that retinal and vestibular ganglion cells generate biological responses evoked by mid laser irradiation. Then, we directly address this question through pharmacological characterization of the biological response evoked by mid infrared irradiation of isolated retinal and vestibular ganglion cells from rodents. Whole-cell patch-clamp recordings reveal that both voltage-gated calcium and sodium channels contribute to the laser evoked neuronal voltage variations (LEVV). In addition, selective blockade of the LEVV by micromolar concentrations of ruthenium red and RN1734 identifies thermo-sensitive TRPV4 channels as the primary effectors of the chain reaction triggered by mid infrared laser irradiation.

abstract: Tissue approximation and repair have been performed with sutures and staples for centuries, but these means are inherently traumatic. Tissue repair using laser-responsive nanomaterials can lead to rapid tissue sealing and repair and is an attractive alternative to existing clinical methods. Laser tissue welding is a sutureless technique for sealing incised or wounded tissue, where chromophores convert laser light to heat to induce in tissue sealing. Introducing chromophores that absorb near-infrared light creates differential laser absorption and allows for laser wavelengths that minimizes tissue damage. In this work, plasmonic nanocomposites have been synthesized and used in laser tissue welding for ruptured porcine intestine ex vivo and incised murine skin in vivo. These laser-responsive nanocomposites improved tissue strength and healing, respectively. Additionally, a spatiotemporal model has been developed for laser tissue welding of porcine and mouse cadaver intestine sections using near-infrared laser irradiation. This mathematical model can be employed to identify optimal conditions for minimizing healthy cell death while still achieving a strong seal of the ruptured tissue using laser welding. Finally, in a model of surgical site infection, laser-responsive nanomaterials were shown to be efficacious in inhibiting bacterial growth. By incorporating an anti-microbial functionality to laser-responsive nanocomposites, these materials will serve as a treatment modality in sealing tissue, healing tissue, and protecting tissue in surgery. / Dissertation/Thesis / Doctoral Dissertation Chemical Engineering 2019

No description available.

Un grand nombre d’applications réclament des sources laser en régime impulsionnel toujours plus puissantes et énergétiques. Les progrès continus des technologies laser permettent non seulement d’améliorer les performances de l’outil laser mais aussi d’ouvrir la voie à de nouvelles applications. Cependant, l'augmentation de la puissance des sources laser est aussi accompagnée par une complexification des systèmes. Cette thèse porte sur l’étude d’amplificateurs laser de puissances qui se distinguent par la simplicité de leurs architectures : avec un ou deux passages dans le milieu laser. Dans la première partie, nous étudions le potentiel de la fibre cristalline Yb: YAG pompée par diode en tant qu’amplificateur. Les effets de confinement de l’intensité de pompe au centre de la fibre cristalline par guidage sont étudies théoriquement et expérimentalement. Deux expériences démontrent ensuite l’intérêt de la fibre cristalline Yb:YAG en tant qu’amplificateur de puissance de sources laser à fibres, l’une en régime femtoseconde et l’autre avec un laser mono-fréquence. Par ailleurs, nous explorons le potentiel de notre concept en régime de forte puissance. Une puissance de 250 W en oscillateur et une extraction de 100 W en amplificateur ont été obtenues avec une diode de pompe de 600 W. La deuxième partie traite de l’étude d’amplificateurs à base de cristaux de Nd:YVO4. Le dimensionnement de notre système est réalisé en s’appuyant sur une étude des propriétés du Nd:YVO4. L’amplificateur ainsi obtenu affiche des performances inédites qui se caractérisent par un très fort gain optique (40-60 dB) couplé à une forte extraction de puissance moyenne (10 à 15 W). / A wide range of scientific and industrial applications require pulsed laser sources delivering increasing amount of powers and pulse energies. Continuous progresses in the field of laser technology do not only bring significant process efficiency improvements but also allow developing new applications. However, the complexity of laser sources has significantly increased over the years together with their performance. In contrast, this work focuses on power amplifier architectures which are particularly simple (with one or two passes). In the first part, we study the potential of Yb:YAG single crystal fibers. Pump intensity confinement by the pump beam guiding is studied in details both theoretically and experimentally. Two experiments demonstrate the interest of Yb:YAG single crystal fibers as a power amplifier for fiber based laser sources, one in femtosecond regime and the other one with a single frequency laser. Furthermore, the potential of our architecture is also explored in high power regime. An output power of 250 W for the oscillator and 100 W power extraction with the amplifier were obtained with a 600 W pump diode. The second part describes the study of laser amplifiers using longitudinally pumped Nd:YVO4 bulk crystals. We study the effect of temperature increase in the laser crystal and evaluate the influence of the doping concentration and excited state population on the heat load. Guided by the conclusion of our study, we design a high gain amplifier characterized by very high optical gain (40-60 dB) coupled to a high average power extraction (10 to 15 W)

Das Thema dieser Dissertation ist das MBE-Wachstum und die Charakterisierung von Ga(As,N) und (In,Ga)(As,N). Die Arbeit beginnt mit der Optimierung des Wachstums von Ga(As,N). Aufgrund der hohen Mischbarkeitslücke von GaN in GaAs verursacht der Einbau von Stickstoff in GaAs eine strukturelle Degradation, die von der Substrattemperatur, der Stickstoffkonzentration und der Quantentopfdicke abhängt. Ein weiteres Problem bezüglich des Wachstums von Ga(As,N) sind Punktdefekte, die einen schädlichen Einfluß auf optische Eigenschaften haben. Eine thermische Behandlung verringert die Konzentration dieser Punktdefekte. Dies geht mit einer Steigerung der Photolumineszenz-Intensität einher. Punktdefekte sind zum Beispiel Stickstoff-Dimere, die sich in Gallium- oder Arsen-Vakanzen einbauen. Eine thermische Behandlung bei hohen Temperaturen bewirkt jedoch eine strukturelle Degradation im Ga(As,N)-Materialsystem, die sich in einer Abnahme der Photolumineszenz-Intensität manifestiert. Es wird gezeigt, daß die Temperatur der thermischen Behandlung, die die höchste Photolumineszenz-Ausbeute erzielt, von der Stickstoffkonzentration abhängt. Bezüglich des Wachstums von (In,Ga)(As,N) verursacht die Mischbarkeitslücke von (In,Ga)N in (In,Ga)As ebenfalls eine strukturelle Degradation. Auch im quaternären Materialsystem ist eine thermische Behandlung essentiell für die Verbesserung optischer Eigenschaften. Es wird außerdem gezeigt, daß die thermische Behandlung von (In,Ga)As eine Indiumdiffusion verursacht, die durch den Einbau von Stickstoff gestoppt wird. Die Charakterisierung von (In,Ga)(As,N) kantenemittierenden Lasern zeigt Emissionen bei Wellenlängen bis zu 1366 nm. Mit dem Einbau von Stickstoff ist ein Anstieg der Schwellstromdichte und ein Abfall der Emissionsleistung verbunden. / This dissertation deals with the MBE growth and characterization of Ga(As,N) and (In,Ga)(As,N). The work commences with the optimization of the Ga(As,N) growth. Owing to a large miscibility gap of GaN in GaAs, the incorporation of nitrogen into GaAs causes a structural degradation that is dependent on the substrate temperature, the nitrogen concentration, and the quantum well thickness. Another problem related to the growth of Ga(As,N) are point defects that have a detrimental influence on optical properties. A thermal treatment of Ga(As,N) reduces the concentration of these point defects. This leads to a substantial improvement of optical properties. We will show that nitrogen split interstitials that incorporate into gallium and arsenic vacancies may be attributed to these point defects. A thermal treatment of Ga(As,N) at high temperatures, on the contrary, results in a creation of extended defects which are detrimental to optical properties. We will show that the temperature of the thermal treatment that yields the highest photoluminescence intensity is nitrogen concentration-dependent. The growth of (In,Ga)(As,N) is similar with respect to Ga(As,N). Again, one has to face a high miscibility gap of (In,Ga)N in (In,Ga)As that results in a structural degradation. A thermal treatment of (In,Ga)(As,N) is also beneficial for improving optical properties. We will show that a thermal treatment of (In,Ga)As results in an indium diffusion that is suppressed by the incorporation of nitrogen. The characterization of (In,Ga)(As,N) edge emitting lasers shows emission at wavelengths up to 1366 nm. With higher nitrogen concentrations, there is a strong increase of the threshold current density and a decrease of the output power.

Abstract : Photonic Integrated Circuits (PIC) are of tremendous interest for photonics system in order to reduce their power consumption, size, fabrication cost and improve their reliability of fiber optics linked discrete component architecture. However, unlike for microelectronics, in photonics different heterostructures are required depending on the type of device (laser sources, detectors, modulators, passive waveguides…). Therefore photonics integration needs a technology able to produce multiple bandgap energy wafers with a suitable final material quality in a reproducible manner and at a competitive cost: a technological challenge that has not been completely solved yet. Quantum Well Intermixing (QWI) is a post growth bandgap tuning process based on the localized and controlled modification of quantum well composition profile that aims to address these matters. UV laser induced QWI (UV-Laser-QWI) relies on high power excimer laser to introduce point defects near the heterostructure surface. By adjusting the laser beam shape, position, fluence and the number of pulse delivered, the different regions to be intermixed can be defined prior to a rapid thermal annealing step that will activate the point defects diffusion across the heterostructure and generate quantum well intermixing. UV-LaserQWI presents the consequent advantage of allowing the patterning of multiple bandgap regions without relying on photolithographic means, thus offering potentially larger versatility and time efficiency than other QWI processes. UV-Laser-QWI reproducibility was studied by processing samples from an InGaAs/InGaAsP/InP 5 quantum well heterostructure emitting at 1.55 µm. 217 different sites on 12 samples were processed with various laser doses. The quantum well intermixing generated was then characterized by room temperature photoluminescence (PL) mapping. Under those experimental conditions, UV-Laser-QWI was able to deliver heterostructures with a PL peak wavelength blue shift controlled within a +/- 15 % range up to 101.5nm. The annealing temperature proved to be the most critical parameter as the PL peak wavelength in the laser irradiated areas varied at the rate of 1.8 nm per degree Celsius. When processing a single wafer, thus limiting the annealing temperature variations, the bandgap tuned regions proved to be deliverable within ± 7.9%, hence establishing the potential of UV-Laser-QWI as a reproducible bandgap tuning solution. The UV-Laser-QWI was used to produce multiple bandgap wafers for the fabrication of broad spectrum superluminescent diodes (SLD). Multiple bandgap energy profiles were tested and their influence on the SLDs’ performances was measured. The most favorable bandgap modifications for the delivery of a very broadband emitting SLD were analyzed, as well as the ones to be considered for producing devices with a flat top shaped spectrum. The intermixed SLDs spectra reached full width at half maximum values of 100 nm for a relatively flattop spectrum which compare favorably with the ≈ 40nm of reference devices at equal power. The light-intensity characteristics of intermixed material made devices were very close to the ones of reference SLD made from as-grown material which let us think that the alteration of material quality by the intermixing process was extremely limited. These results demonstrated that the suitability of UV-Laser-QWI for concrete application to photonic devices fabrication. Finally, an alternative laser QWI technique was evaluated for SLD fabrication and compared to the UV laser based one. IR-RTA relies on the simultaneous use of two IR laser to anneal local region of a wafer: a 980 nm laser diode coupled to a pigtailed fiber for the wafer background heating and a 500 µm large beam TEM 00 Nd:YAG laser emitting at 1064 nm to anneal up to intermixing temperature a localized region of the wafer. The processed samples exhibited a 33 % spectral width increase of the spectrum compare to reference device at equal power of 1.5 mW. However, the PL intensity was decreased by up to 60 % in the intermixed regions and the experiments proved the difficulty to avoid these material degradations of material quality with IR-RTA. / Résumé : L’intégration de circuit photonique vise à réduire la consommation énergétique, la taille, le coût et les risques de panne des systèmes photoniques traditionnels faits de composants distincts connectés par fibre optique. Cependant, contrairement à la microélectronique, des hétérostructures spécifiques sont requises pour chaque composant : lasers, détecteurs, modulateurs, guides d’ondes… De cette constatation découle le besoin d’une technologie capable de produire des gaufres d’hétérostructures III/V de qualité à plusieurs énergies de gap, et ce de façon reproductible pour un coût compétitif. Aucune des techniques actuelles ne répond pour l’instant pleinement à tous ces impératifs. L’interdiffusion de puits quantique (IPQ) est un procédé post épitaxie basé sur la modification locale de la composition des puits quantiques. L’IPQ induite par laser UV (IPQ-UV) est basée sur l’utilisation de laser excimer (Argon-Fluor émettant à 193 nm ou Krypton-Fluor à 248 nm) pour introduire des défauts ponctuels à la surface de l’hétérostructure. En ajustant la taille du faisceau, sa position, son énergie ainsi que le nombre d’impulsions laser délivrées à la surface du matériau, on peut définir les régions à interdiffuser ainsi que leur futur degré d’interdiffusion. Un recuit de la gaufre active ensuite la diffusion des défauts et par conséquent l’interdiffusion du puits. L’IPQ-UV présente l’avantage considérable de se passer de photolithographie pour définir les zones de différentes énergies de gap, diminuant ainsi la durée et potentiellement le coût du procédé. La reproductibilité de l’IPQ-UV a été étudiée pour l’interdiffusion d’une structure à 5 puits quantiques d’InGaAs/InGaAsP/InP émettant à 1.55 µm. 217 régions sur 12 échantillons ont été irradiés par un laser KrF avec des nombres d’impulsion variables selon les sites et avec une densité d’énergie constante de 155 mJ/cm². Les modifications de la structure générée par ce traitement furent ensuite mesurées par cartographie en photoluminescence (PL) à température ambiante. L’analyse des données montra que l’IPQ-UV permet un contrôle du décalage vers le bleu du pic de PL à +/- 15 % jusqu’à 101.5nm. La température du recuit est apparue comme le paramètre crucial du procédé, puisque la longueur d’onde du pic de PL des zones interdiffusées varie de 1.8 nm par degré Celsius. En considérant les sites irradiés sur une seule gaufre, c’est à dire en s’affranchissant des variations de température entre deux recuits de notre système, la variation du pic de PL est contrôlable dans une plage de ± 7.9%. Ces résultats démontrent le potentiel de l’IPQ-UV en tant que procédé reproductible de production de gaufre à plusieurs énergies de gap. L’IPQ-UV a été utilisé pour la fabrication de diodes superluminescentes (DSLs). Différents type de structure à énergie de gap multiple ont été testés et leurs influences sur les performances spectrales des diodes évalués. Les spectres des DSLs faites de matériau interdiffusé ont atteint des largeurs à mi-hauteur dépassant les 100 nm (jusqu’à 132 nm), ce qui est une amélioration conséquente des ≈ 40nm des DSLs de référence à puissance égale. Les caractéristiques intensité–courant des DSLs interdiffusés furent mesurées comme étant très proches de celle des dispositifs de référence faits de matériau brut, ce qui suggère que l’IPQ-UV n’a pas ou très peu altéré la qualité du matériau initial. Ces résultats prouvent la capacité de l’IPQ-UV à être utilisé pour la fabrication de dispositifs photoniques. Une technique alternative d’IPQ par laser a été évaluée et comparée à l’IPQ-UV pour la fabrication de DSL. Le recuit rapide par laser IR est basé sur l’utilisation simultanée de deux lasers IR pour chauffer localement l’hétérostructure jusqu’à une température suffisante pour provoquer l’interdiffusion: une diode laser haute puissante émettant à 980 nanomètre couplée dans une fibre chauffe la face arrière de la gaufre sur une large surface à une température restant inférieure à celle requise pour provoquer l’interdiffusion et un laser Nd:YAG TEM 00 émettant à 1064 nm un faisceau de 500 µm de large provoque une élévation de température additionnelle localisée à la surface de l’échantillon, permettant ainsi l’interdiffusion de l’hétérostructure. Les dispositifs fabriqués ont montré une augmentation de 33 % de la largeur à mi-hauteur du spectre émis à puissance égale de 1.5 mW. Cependant, l’intensité du pic de PL dans les zones interdiffusées est diminuée de 60 %, suggérant une dégradation du matériau et la difficulté à produire un matériau de qualité satisfaisante.

No description available.

It would be of great value to have a precise and non-damaging neuromodulation technique in the field of basic neuroscience research and for clinical treatment of neurological diseases. Infrared neural modulation (INM) is a new modulation modality developed in the last decade, which uses pulsed or continues infrared (IR) light with a wavelength of 1200 to 2200 nm to directly alter neural signals. INM includes both infrared neural stimulation (INS) and infrared neural inhibition (INI). INM is widely investigated for use on peripheral nerves, cochlear nerve fibers, cardiac cells, and the central nervous system. This technique holds the advantages of contact-free and high spatiotemporal precision compared to the traditional electrical stimulation. It does not depend on genetic modification and exogenous absorbers as other optical techniques, such as the optogenetic technique and the enhanced near-infrared neural stimulation (e-NIR). These advantages make INM a viable technique for research and clinical applications. The primary mechanism of the INM is believed to be a photothermal effect, where the IR laser energy absorbed by water leads to a rapid local temperature change. However, so far the details of the mechanism of action potential (AP) generation and inhibition remain elusive. Another issueis that the cells may be endangeredbythe heat exposure, consequently triggering a physiologicalmalfunction or even permanent damage.These concernshave hindered the transfer of the INM technique to the clinical therapy.Therefore, the general aim of this study was to improve the understanding of the details of how INM affects the cells. Laser parameters for safe and efficient stimulation were investigated on the basis of being useful for clinical applications. A tailored heating model and in vitro INM experiments on cortex neurons were used to reach this goal.The first paper was a feasibility study. A 1550nm laser with a beam spot diameter of around 6 mm was used to irradiate the rat cortex neurons, which were seeded on multi-electrode arrays (MEA) and formed well-connected networks. A heating model based on an estimated laser beam (standard Gaussian distribution) was used to simulate temperaturechanges. The damage signal ratio (DSR),based on the temperature,was calculated to predict the heat damage. The average spike rate of all the working electrodes from two MEAs was used to evaluate the degree of theinhibition of the neural networks. Results IVshowed that it is possible to use the 1550 nm laser to safely inhibit the neural network activity and that the degree of the INI is dependent on the power of the laser.The second paper wasan application and mechanism study. The aim of this study was to investigate the safety, efficiency, and cellular mechanism of INI. The same laser as in paper Iwas used in this study. A 20 X objective was used to decrease the beam spot diameteraround 240 μm. The measured laser profile (high order Gaussian beam) was used in the heating model to predict the temperature. The model was verified by local temperature measurements viamicropipette. The action potential rates, measured by the MEA electrodes, were quantified for different temperatures. Bicuculline was added to the cortex neuron cultures to induce hyperexcitation of the neural network. The results showed that the INI is temperature dependent and that the temperature needs to be less than 46 °C at 30 s laser irradiation for safe inhibition. The IR laser couldalso be used to inhibit the hyperexcitedactivity. The degree of inhibition, for the assessed subpopulation of neurons, was better correlated with the action potential amplitude than the width of it and INIcan be accomplished without inhibitory synapses / <p>QC 20180920</p><p></p>

Orientador: Rubens Maciel Filho / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Quimica / Made available in DSpace on 2018-08-09T08:31:02Z (GMT). No. of bitstreams: 1 Rezende_RodrigoAlvarenga_M.pdf: 6027055 bytes, checksum: dc80f298be40be05219c739478682c4d (MD5) Previous issue date: 2006 / Resumo: A Prototipagem Rápida consiste na reprodução física de objetos tridimensionais de geometria livre, a partir de um projeto inicial (design), modelado por auxílio de computador. A Prototipagem Rápida é uma tecnologia moderna que une métodos e equipamentos adequados a fim de oferecer, como principais atrativos, alta qualidade e redução de custos de produtos manufaturados. São diversos os métodos existentes e os materiais aplicáveis. Este trabalho apresenta um novo método de fabricação de protótipos, a Termolitografia. Baseada na irradiação de laser de CO2 na região espectral do infravermelho sobre resinas termossensíveis, a Termolitografia oferece importantes vantagens quando comparada a outros processos, principalmente no que se refere ao estado físico da amostra logo após a irradiação do laser. Este processo apresenta duas grandes vantagens que são a não-contração da amostra após ser curada e a ausência de tratamento pós-cura. A cura localizada é o fenômeno de confinamento da energia transmitida pelo laser realizando a cura do material somente em uma região desejada. O controle da cura localizada é a chave para o sucesso e para a garantia de protótipos de alta qualidade. Para ajustá-la e otimizá-la, é necessário o domínio de parâmetros físicos do material empregado e de parâmetros operacionais do laser de CO2. O estudo da combinação dos efeitos, por exemplo, da variação da proporção dos componentes da amostra, da sua temperatura de cura, além de fatores operacionais como a velocidade de varredura, o diâmetro e a potência do feixe laser, é o alvo principal deste trabalho. As simulações facilitam a compreensão de como cada variável pode interferir na construção do protótipo, e determinam faixas de valores para os parâmetros as quais implicam em melhores resultados no final do processo. O trabalho de seleção destes valores é importante para a futura continuidade de estudo experimental do processo termolitográfico / Abstract: Rapid Prototyping consists on a physical replication of three-dimensional objects with free geometry, from an initial design, modeled by computer assistance. Rapid Prototyping is a modern technology that unifies methods and suited equipments in order to offer as main attractive high quality and cost-reduction of manufactured products. There are many techniques and raw materials applicable. This work presents a new method of prototypes fabrication, the Termolithography. Based on CO2 laser irradiation at the infrared spectral region onto thermosensitive resins, Thermolithography offers important advantages if compared with other processes, mainly those ones respected to the non-contraction effect of the sample after being cured and the absence of a post cure treatment. The localized cure is the phenomenon of confinement of energy transmitted by laser beam performing the curing only on a desired region at the sample. The control of the localized cure is the key for the success and for the guarantee of high quality prototypes. In order to fit and optimize it, it is necessary the domain of physical properties of the applied material and the domain of the CO2 laser operational parameters. The study of combination of the involved effects, for instance, the variation of amount of the components in the sample, the cure temperature, beside operational parameters as scanning velocity, the laser beam diameter and power, are the main target of this work. Simulations become easier the comprehension of how each variable can affect during the building of prototype and to determine the best range of values which implicate in better final result of the process. The selection of these values is very important to the continuity of this work / Mestrado / Desenvolvimento de Processos Químicos / Mestre em Engenharia Química

本論文の目的は、外科手術を必要としない、非侵襲人工内耳の開発である。スナネズミを対象とした基礎研究からヒトを対象とした応用研究まで包括的に行うことで、赤外光レーザー刺激を用いて音声知覚を再現する刺激手法の確立を目指した。スナネズミを対象とした実験によりレーザー刺激が生み出す音の「聞こえ」を明らかにし、ヒトを対象とした実験で、レーザー人工内耳で言語知覚を生み出す刺激アルゴリズムを提案した。 / This study aimed to develop a laser auditory prosthesis that can produce intelligible speech perception by stimulating auditory nerves from the outer ear. I investigated laser-evoked auditory perception using Mongolian gerbil. Subsequently, I synthesized a CMS based on animal research using Mongolian gerbils as a simulated sound of the laser auditory prosthesis to propose a speech encoding scheme using laser stimulation. The results showed that all human participants could comprehend the CMS contents by replicating the original sound's formant frequency transition and amplitude envelopes, suggesting that laser auditory prostheses with the CMS could restore speech perception. / 博士(工学) / Doctor of Philosophy in Engineering / 同志社大学 / Doshisha University