Laser Diodes (LDs) are semiconductor coherent lightening devices which are widely used in many fields such as defence, industry, medical and optical communications. They have advantageous characteristics such as having higher electrical-to-optical and optical-to-optical conversion efficiencies from pump source to useful output power when compared to flash lamps, which makes them the best devices to be used in range finding applications. Optical output power of lasers depends on current through LDs. Therefore, there is a relationship between operating life and work performance of LDs and performance of drive power supply. Even, weak drive current, small fluctuations of drive current can result in much greater fluctuations of optical output power and device parameters which will reduce reliability of LDs. In this thesis, a hardware for a fast and high power pulsed LD driver is designed for laser range finder and is based on linear current source topology. The driver is capable of providing pulses up to 120A with 250&mu / s pulse width and frequencies ranging from 20Hz to 40Hz. It provides current pulses for two LD arrays controlled with a proportional-integral (PI) controller and protect LDs against overcurrents and overvoltages. The proposed current control in the thesis reduces current regulation to less than 1% and diminishes overshoots and undershoots to a value less than 1% of steady-state value, which improves safe operation of LDs. Moreover, protection functions proposed in the thesis are able to detect any failure in driver and interrupt LD firing immediately, which guarantees safe operation of LDs.

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

Ce travail de thèse porte sur les systèmes de communication radio-sur-fibre (RoF) aux fréquences millimétriques dans la gamme de fréquences 57-66 GHz et leur génération par voie optique. La technique utilisée repose sur l’emploi de diodes laser à verrouillage de modes à boites quantiques. Au cours de cette thèse, plusieurs études ont été effectuées : la première porte sur la capacité d’intégrer ces types des lasers dans des systèmes de communication RoF avec leurs performances sous modulation directe ou externe. La deuxième étude a été consacrée aux effets de la propagation de ces signaux dans des systèmes basés sur les lasers à blocage de modes. Une technique originale a été mise en place afin de réduire la sensibilité à la dispersion chromatique dans la fibre optique. Une étude de la réduction du bruit de phase des lasers à verrouillage de modes basée sur l’observation de l’effet de la contre réaction et l’injection optique externe a été également présentée. / This thesis focuses on the radio-over-fiber (RoF) communication systems at millimeter frequencies in the frequency range 57-66 GHz and optical generation of a signal at millimeter-wave frequency band. The technique used is based on mode-locked laser diodes. The diodes employed in this work are in quantum dots (or quantum dashes) technology. In this thesis, several studies were conducted: the first relates the ability of integration these types of lasers in the RoF communication systems under direct or external modulation. The second study was devoted to propagation effects. An original technique was implemented to reduce the sensitivity to chromatic dispersion in an optical fiber. A study of the reduction of phase noise mode-locked lasers based on the observation of the reaction effect and against the external optical injection was presented.

Ce travail de thèse porte sur la conception, la réalisation et l'étude de sources laser à semi-conducteur de haute cohérence, émettant à 894 nm, pour application aux horloges atomiques Césium compactes pompées optiquement, dans un contexte de développement industriel. Nous nous intéressons plus particulièrement aux lasers à émission par la tranche, dits "Distributed-Feedback" (DFB), pompés électriquement. L'objectif est d'obtenir un laser monomode en fréquence, à faible seuil, à rendement optique élevé et de largeur de raie inférieure à 1 MHz. Nous traitons d'abord de la conception et de la caractérisation au 1er ordre des diodes DFB, jusqu'à leur mise en modules pour horloge, puis nous effectuons une étude approfondie des propriétés physiques de l'émission laser en terme de cohérence temporelle, en introduisant une nouvelle méthode universelle de caractérisation du bruit de fréquence optique. Enfin, nous nous intéressons aux propriétés spectrales de l'émission en configuration d'asservissement sur une raie de fluorescence du Césium ("Dither-Locking"). Nous montrons que les propriétés intrinsèques du composant satisfont aux exigences du système industriel tel qu'il a été défini lors de l'étude. / This PhD work deals with the design, the fabrication and the study of high-coherence semiconductor laser sources emitting at 894 nm, for application to compact, optically-pumped cesium atomic clocks in an industrial context. We are particularly interested in the electrically pumped "Distributed-Feedback" in-plane laser diodes (DFB). The aim is to obtain a low-threshold, single-mode laser with high optical efficiency and a linewidth of less than 1 MHz. We first deal with the design and first-order characterization of the DFB diodes until they are put into modules for the clock. We then carry out an in-depth study of the physical properties of the laser emission in terms of coherence time. For that purpose, a new universal method for characterizing the optical frequency noise is introduced. Finally, we look further into the spectral properties of the emission in a servo configuration on a fluorescence line of the cesium ("Dither-Locking"). We show that the intrinsic properties of the component satisfy the requirements of the industrial system as defined in the study.

The main aim of the thesis is a frequency stabilization of the DFB semiconductor laser diodes. The temperature stability of the laser diode chip, the stability and the noise of the injection current and the backward reflections are the crucial parameters which affects the frequency stability. These influences are described and the resolution is proposed. The theory of the external methods of the frequency stabilization and the comparison of these methods is presented. One method was choosed and this method was realized for 760 and 1540 nm wavelength laser diodes. In this method was used the frequency stabilization based on the linear absorption to the spectral lines of the gases. The diploma work is closed by the measured results of the frequency stability of the used laser diodes and by the comparison of level of stability achieved by the other methods.

L'interférométrie par réinjection optique est une technique de mesure dont l'implémentation pour l'interrogation de systèmes fluidiques est assez récente. Le principe de mesure est basé sur la perturbation des paramètres d'émission du laser induite par la réinjection dans la cavité laser de lumière rétro-diffusée par une cible distante. La technique permet le développement de capteurs compact et non-invasifs qui mesurent différents paramètres liés aux déplacements de la cible. En particulier, les interféromètres par réinjection optique prennent avantage de l'effet Doppler pour mesurer la vitesses de traceurs dans les liquides en écoulement. Cet aspect important de la technique de réinjection optique la rend adaptée à une grande variété d'applications dans les domaines du génie chimique et du biomédical où un contrôle des écoulements est requis. Cette thèse présente l'implémentation de capteur basés sur la réinjection optique pour différents systèmes fluidiques où la vitesse locale d'écoulement ou le débit sont directement mesurés. Nous présentons une étude centrée sur les applications où la réinjection optique est utilisée pour la mesure du débit à la micro-échelle avec en particulier une analyse de la robustesse des méthodes de traitement du signal propres aux régimes de diffusion simple et de diffusion multiple. Par ailleurs, nous présentons des résultats expérimentaux de mesures ex vivo où le capteur par réinjection optique est proposé comme alternative pour la myographie. Nous présentons également une implémentation temps réel pour l’estimation du débit instantané d'écoulements dynamiques dans une configuration milli-fluidique. Un système semi-automatisé de détection de particule unique dans un micro-canal est proposé et démontré. Enfin, un capteur basé sur la réinjection optique est implémenté pour la caractérisation des interactions entre deux fluides immiscibles en écoulement à micro-échelle et les mesures réalisées sont comparées à un modèle développé afin de décrire le comportement hydrodynamique des deux fluides dans un micro-réacteur. Le manuscrit décrit une contribution importante pour l'implémentation de capteur par réinjection optique pour des applications fluidiques et en particulier micro-fluidiques. Il présente également des résultats expérimentaux remarquables qui ouvrent de nouveaux horizons pour l'interférométrie à réinjection optique. / Optical feedback interferometry is a sensing technique with relative recent implementation for the interrogation of fluidic systems. The sensing principle is based on the perturbation of the laser emission parameters induced by the reinjection in the laser cavity of light back-scattered from a distant target. The technique allows for the development of compact and noninvasive sensors that measure various parameters related to the motion of moving targets. In particular, optical feedback interferometers take advantage of the Doppler effect to measure the velocity of tracers in flowing liquids. These important features of the optical feedback interferometry technique make it wellsuited for a variety of applications in chemical engineering and biomedical fields, where accurate monitoring of the flows is needed. This thesis presents the implementation of optical feedback interferometry based sensors in multiple fluidic systems where local velocity or flow rate are directly measured. We present an application-centered study of the optical feedback sensing technique used for flow measurement at the microscale with focus on the reliability of the signal processing methods for flows in the single and the multiple scattering regimes. Further, we present experimental results of ex vivo measurements where the optical feedback sensor is proposed as an alternative system for myography. In addition we present a real-time implementation for the assessment of non-steady flows in a millifluidic configuration. A semi-automatized system for single particle detection in a microchannel is proposed and demonstrated. Finally, an optical feedback based laser sensor is implemented for the characterization of the interactions between two immiscible liquid-liquid flowing at the microscale, and the measurement is compared to a theoretical model developed to describe the hydrodynamics of both fluids in a chemical microreactor. The present manuscript describes an important contribution to the implementation of optical feedback sensors for fluidic and microfluidic applications. It also presents remarkable experimental results that open new horizons to the optical feedback interferometry.

Halbleiterlaser stellen mit über 70% Wirkungsgrad einzigartig effiziente Lichtquellen dar. Dennoch ist ihre zuverlässige Nutzung, insbesondere im Bereich hoher Leistungsdichten, von thermischen Limitierungen geprägt. Einen grundlegenden Beitrag zu deren physikalischen Verständnis leistet die Analyse der thermischen Eigenschaften und Degradationsprozesse solcher Bauelemente. In dieser Arbeit wird hierzu die Thermographie als innovative Analysemethode untersucht. Das Plancksche Strahlungsgesetz erlaubt die radiometrische Ermittlung der Temperatur. Die wichtige physikalische Kenngröße Emissivität wird in dieser Arbeit für Halbleiter und Halbleiterlaserstrukturen spektral gemessen und auf fundamentale physikalische Eigenschaften zurückgeführt. Auf dieser Grundlage werden methodische Aspekte der Thermographie diskutiert, welche durch den thermischen Hintergrund und die teilweise Transparenz der Halbleitermaterialien geprägt sind. Die daraus folgenden analytischen Fähigkeiten erlauben unter anderem die orts- und zeitaufgelöste Bestimmung der thermischen Eigenschaften von komplexen Hochleistungslasern unterschiedlichster Bauart. Darüber hinaus ermöglicht die Kenntnis der beteiligten thermischen Zeitkonstanten die Extraktion von lokalen Überhöhungen in der Infrarotemission, deren Zusammenhang zur Degradation der Bauelemente untersucht wird. Eine grundsätzliche Begrenzung der Ausgangsleistung ist durch einen abrupten Degradationsprozess gegeben, welcher maßgeblich durch eine Reabsorption der Laserstrahlung an der Frontfacette verursacht wird. Mithilfe einer kombinierten Thermographie-Nahfeld-Messung wird dieser Prozess orts- und zeitaufgelöst analysiert. Die Erweiterung des Messfensters zu kürzeren Wellenlängen hin erlaubt die Detektion strahlender Übergänge unter Einbeziehung von Defektzentren welche als strahlende Signaturen von graduellen Degradationsprozessen aufzufassen sind. / Semiconductor lasers are unequaled efficient light sources, reaching efficiencies of more than 70%. Nevertheless, thermal limits govern their reliable application, in particular in the field of high power densities. The analysis of thermal properties and degradation processes in such devices contributes essentially to the understanding of these limits. This work exploits thermography as an innovative analytical technique for such purpose. Planck''s law allows for a radiometric detection of temperatures. In this work, the important physical parameter emissivity is measured spectrally resolved for both semiconductors and semiconductor laser structures and is related to fundamental physical properties. Based on that, methodological aspects are discussed, which are affected on the one hand by the omnipresent thermal radiation and on the other hand by the partial transparency of the semiconductor materials. The resulting analytical capacities allow, for instance, for the determination of the thermal properties of complex high-power lasers of a wide range of different designs in a spatio-temporally resolved fashion. Furthermore, does the knowledge of the involved thermal time constants allow for an extraction of localized peaks of the infrared emission that is analyzed for its relationship with device degradation. The output power of high-power devices is fundamentally limited by the catastrophic optical damage, an abrupt degradation process that is induced significantly by reabsorption of laser radiation at the front facet. This process is analyzed spatio-temporally resolved with help of a combined thermography and optical near-field technique. Extending the detection range down to shorter wavelengths allows for imaging of radiative transitions that are related to defect centers, which are interpreted as radiative signatures of gradual device degradation processes.

Ce travail de thèse s’inscrit dans la recherche des solutions économiquementviables pour des réseaux personnels à hauts débits (plusieurs Gbps à plusieursdizaines de Gbps) opérationnels en bande millimétrique autour de 60 GHz. Aucas où ces réseaux servent un nombre élevé d’utilisateurs, ils comprendront unemultitude d’antennes afin d’assurer l’accès sans fil rapide. Afin de réduire aumaximum le coût d’un module d’antenne, les réseaux doivent fournir un signalanalogue à des porteuses millimetriques. Une solution prometteuse pour les systèmesde distribution qui correspond à ces besoins sont des structures à fibreoptique, laquelle permet une transmission à faibles pertes et à haute bande passante.On parle de l’approche "radio-sur-fibre" (en anglais, radio-over-fiber). Laproblématique est de pouvoir générer et moduler un signal aux fréquences millimétriqueslors de la transmission optique - et ce avec des composant bas coûts.La technique utilisée dans le cadre de cette thèse est l’emploi des diodes laser àverrouillage de modes. Ces derniers vont pouvoir générer des hautes fréquencestout en ne nécessitant qu’une alimentation continue, et ils peuvent être modulésde manière directe ou externe. Les lasers à semi-conducteurs employés ici sontd’une génération encore à l’état d’étude puisqu’il s’agit des lasers à boites (ouîlots) quantiques. Ces lasers ont montrés de très bonnes capacités à générer dessignaux électriques aux fréquences autour de 60 GHz, bien qu’ayant encore, pourl’instant, à une stabilité de fréquence (ou de phase) limitée. Dans le cadre des systèmesde communication opto/micro-ondes, peu de travaux approfondis ont étémenés sur ces structures.Au cours de cette thèse, plusieurs études ont été effectuées. La première portesur les propriétés générales d’un système construit à partir de ce type de laser(puissances disponibles, figure de bruit, linéarité etc.). Une deuxième étude aété consacrée aux effets de la propagation des signaux dans les systèmes baséssur les lasers à verrouillage de modes, notamment de la dispersion chromatiquelaquelle a un effet considérable sur les distances de transmission. Les deux étudesmettent en avant l’importance d’une limitation du nombre de modes générés parla diode laser afin d’optimiser non seulement le gain du lien et la puissance RFrécupérée, mais aussi la figure de bruit du système. Lors d’une troisième étude, lastabilité en fréquence/phase s’est révélée critique, car le bruit de fréquence/phaselimite la qualité de la transmission en introduisant un plancher d’erreur mêmepour des rapports signal-a-bruit très élevés. Des différentes générations de lasersà boites (îlots) quantiques et à verrouillage de modes ont été testées. Le problèmedu bruit de fréquence et de phase persiste et ne peut pas être résolu en utilisantles techniques classiques comme les boucles à verrouillage de phase conventionnelles.Une solution pour ce problème a été développée pour les systèmes detransmission; elle permet simultanément un ajustement de fréquence supérieure(précision de quelques Hz à quelques kHz) à celle donnée par le processus de fabricationdes diodes lasers (précision de quelques GHz), ainsi qu’une stabilisationde fréquence et de phase. / This dissertation is related to the search for an economically sustainable solutionfor high data rate (several Gbps to several tens of Gbps) personal area networksoperating in the millimeter-wave region around 60 GHz. If such networks supplya large number of users, they need to encompass a multitude of antenna pointsin order to assure wireless access to the network. With the aim of reducing thecost of an antenna module, the networks should at best provide quasi "readyto-radiate" signals to the modules, i.e. at millimeter-wave carrier frequencies.Thanks to their low transmission loss and their high bandwidth, optical fiber distributionarchitectures represent a promising solution. The technique is referredto as the so-called "radio-over-fiber" approach whereby the analog radio signalwill be transported to the access point by an optical wave. The challenge herebyis the generation and modulation of an optical signal by a millimeter-wave radiosignal using preferably cost-efficient system components. The technique proposedherein is based on the use of mode-locked laser diodes which can generatesignals at very high frequencies under the condition of continuous current supply.Mode-locked laser diodes can be modulated both directly and externally. Thediodes employed in this work are based on so-called quantum dots (or quantumdashes); these are material structures which are themselves still subject to intensivephysical research. Signals at millimeter-wave frequencies (around 60 GHz)can easily be generated by such lasers. However, their frequency and phase stabilityis as yet limited. In the context of radio-over-fiber communication systems,these structures have not yet been studied in detail.In the course of this dissertation, several aspects are considered. A first systemstudy treats the basic properties of a system built from this type of laser source(available signal power, system noise figure, linearity etc.). A second study isdevoted to an investigation of propagation effects like dispersion, which considerablyinfluence the attainable transmission distances. An essential result of bothstudies is the importance of limiting the laser spectrum to a small number of lasermodes for an optimization of link gain, generated RF power, and system noisefigure. A third study deals with the limited frequency and phase stability whichturn out to be critical factors for transmission quality. The study of several generationsof quantum dot/dash lasers has revealed that the problems of frequencyand phase noise persist and cannot be solved using classical techniques involvinge.g. conventional phase-locked loops. In this dissertation, a solution is presentedwhich not only allows a more precise adjustment of the laser frequency (precisionin the order of Hz to kHz) than that given by the manufacturing process of thelaser (precision in the order of GHz), but also enables a stabilization of frequencyand phase. / Die vorliegende Dissertation steht im Zusammenhang mit der Suche nach wirtschaftlichtragfähigen Lösungen zum Aufbau hochdatenratiger Heimnetzwerke(einige Gbps bis einige zehn Gbps), so genannter Personal area-Netzwerke imMillimeterwellenbereich um 60 GHz. Sollen diese Netze eine große Anzahl vonNutzern versorgen, wird eine Vielzahl von Zugangspunkten - also Antennenmodulen- benötigt, um den drahtlosen Netzanschluss zu ermöglichen. Um dieKosten eines Antennenmoduls soweit wie möglich zu senken, sollen die Netzequasi "abstrahlfertige" Signale an die Module liefern, d. h. auf Trägerfrequenzenim Millimeterwellenbereich. Glasfaserbasierte Verteilsysteme werden dankihrer geringen Leitungsverluste und ihrer hohen Bandbreite diesem Anspruchgerecht. Man spricht hier vom so genannten Radio-over-fiber-Ansatz, wobei dasanaloge Signal von einer optischen Welle zum Zugangspunkt transportiert wird.Die Herausforderung liegt hierbei in der Generierung und Modulation eines optischenSignals mit einem Nutzsignal imMillimeterwellenbereich - und das unterVerwendung möglichst kostengünstiger Komponenten. Die hier vorgeschlageneTechnik basiert auf der Nutzung von modengekoppelten Laserdioden, welcheallein bei Gleichstromversorgung Signale bei hohen Frequenzen erzeugen undsowohl direkt als auch extern moduliert werden können. Die Dioden, welche hierzur Verwendung kommen, basieren auf so genannten Quantenpunkten (englisch:quantum dot/quantum dash); es sind Strukturen, die selbst noch Gegenstand intensiverphysikalischer Forschung sind. Signale bei Frequenzen um 60 GHz könnenleicht von diesen Lasern erzeugt werden, wenn auch bisher nur bei begrenzterFrequenz- und Phasenstabilität. Im Kontext von Radio-over-fiber-Systemenwurden diese Strukturen noch nicht untersucht.Im Rahmen dieser Dissertation wurden mehrere Aspekte betrachtet. Eine ersteSystemstudie behandelt die grundlegendenEigenschaften eines Systems, welchesauf dieser Art von Lasern basiert (verfügbare Leistung, Rauschzahl, Linearitätusw.). Eine zweite Untersuchung ist der Erforschung von Ausbreitungseffektenwie etwa Dispersion gewidmet, welche die erreichbaren Entfernungen maßgeblichbeeinflusst. Ein wesentliches Ergebnis beider Studien ist die Relevanzeiner Begrenzung des Laserspektrums auf wenige Moden zur Optimierung vonGewinn, Hochfrequenz-Leistung und Rauschzahl. Eine dritte Studie untersuchtdie Frequenz-und die Phasenstabilität, welche sich als kritisch für die Übertragungsqualitäterweisen. Die Untersuchung von mehreren Generationen von modengekoppeltenQuantenpunktlasern hat ergeben, dass das Problem des FrequenzundPhasenrauschens fortbesteht und nicht auf konventionellem Weg wie z.B.durch die Verwendung von klassischen Phasenregelkreisen gelöst werden kann.Im Rahmen der Arbeit wurde eine Lösung für dieses Problem gefunden, welcheerstens eine bessere Feineinstellung der Frequenz erlaubt (Genauigkeit von Hzbis kHz), als sie durch den Laserfertigungsprozess gegeben ist (Genauigkeit vonGHz), und zweitens eine Stabilisierung von Frequenz und Phase ermöglicht.

This thesis is divided into four distinct chapters all linked by the topic of spray cooling. Chapter one gives a detailed categorization of future and current spray cooling applications, and reviews the major advantages and disadvantages that spray cooling has over other high heat flux cooling techniques. Chapter two outlines the developmental goals of spray cooling, which are to increase the output of a current system and to enable new technologies to be technically feasible. Furthermore, this chapter outlines in detail the impact that land, air, sea, and space environments have on the cooling system and what technologies could be enabled in each environment with the aid of spray cooling. In particular, the heat exchanger, condenser and radiator are analyzed in their corresponding environments. Chapter three presents an experimental investigation of a fluid management system for a large area multiple nozzle spray cooler. A fluid management or suction system was used to control the liquid film layer thickness needed for effective heat transfer. An array of sixteen pressure atomized spray nozzles along with an imbedded fluid suction system was constructed. Two surfaces were spray tested one being a clear grooved Plexiglas plate used for visualization and the other being a bottom heated grooved 4.5 x 4.5 cm2 copper plate used to determine the heat flux. The suction system utilized an array of thin copper tubes to extract excess liquid from the cooled surface. Pure water was ejected from two spray nozzle configurations at flow rates of 0.7 L/min to 1 L/min per nozzle. It was found that the fluid management system provided fluid removal efficiencies of 98% with a 4-nozzle array, and 90% with the full 16-nozzle array for the downward spraying orientation. The corresponding heat fluxes for the 16 nozzle configuration were found with and without the aid of the fluid management system. It was found that the fluid management system increased heat fluxes on the average of 30 W/cm2 at similar values of superheat. Unfortunately, the effectiveness of this array at removing heat at full levels of suction is approximately 50% & 40% of a single nozzle at respective 10[degrees]C & 15[degrees]C values of superheat. The heat transfer data more closely resembled convective pooling boiling. Thus, it was concluded that the poor heat transfer was due to flooding occurring which made the heat transfer mechanism mainly forced convective boiling and not spray cooling. Finally, Chapter four gives a detailed guide for the design and construction of a high heat flux heater for experimental uses where accurate measurements of surface temperatures and heat fluxes are extremely important. The heater designs presented allow for different testing applications; however, an emphasis is placed on heaters designed for use with spray cooling.