<p>Tuning the structural and electronic properties of layered materials is critical for the development of thin, flexible semiconductors that are capable of overcoming Moore’s law. Intercalation of transition metals (TMs) into the interlayer gaps of a two-dimensional host material is one of the most promising methods toward modifying the electronic properties without disrupting the chemical bonds within the layers. Previous studies have shown that the intercalation of TMs into Bi2Se3, SnS2, TaS2, and NbS2 altered the electronic, optical, and magnetic properties of the material due to orbital hybridization between the d-orbitals of the intercalant and the bands of the host material. However, the synthesis of intercalated 2D materials using compositionally-limited because the process is driven by a charge transfer reaction from the intercalant to the conduction band of the host material, which is difficult to achieve on group VI TMDs (MoS2, WS2) with high energy conduction bands. As a result, only metal atoms that are highly reducing, like alkali metals, can be effectively intercalated into WS2. Meanwhile, alkali metal-intercalated WS2 materials are unstable under ambient conditions, which significantly limits further device application. In this dissertation, we developed a solution-phase synthetic method to successfully intercalate a broad range of redox-active TM cations into WS2 and access a variety of intercalation morphologies. With these different intercalated structures, the electronic properties of WS2 can be systematically adjusted.</p> <p>First, we synthesized vanadium-intercalated WS2, and structural characterization reveals that solvated vanadium cations are uniformly intercalated in WS2, which significantly increases the interlayer spacing from 6.2 Å to 14.2 Å. Raman and X-ray absorption spectroscopy (XAS) experiments indicate a strong interaction between the vanadium intercalants and the WS2 basal plane. Electronic transport measurements show that the vanadium-intercalated WS2 is an n-type semiconductor with room-temperature conductivity of 12 S/cm, 2 orders of magnitude higher than pristine WS2. The electronic properties can be further tuned by varying the concentration of V intercalants.</p> <p>We further synthesized TM-intercalated WS2 using 17 different metal precursors, varying the identity, reduction potential, charge density, and ionic radius in order to determine the key properties that influence intercalation. With detailed structural characterization, we determined that both charge density and reduction potential of the precursor are critical toward achieving selective intercalation over secondary nucleation. The strength of the host-guest interaction is also dependent on the transition metal identity. With the strongest interaction between the TM intercalants and WS2 basal plane, FeCl3-WS2 has the lowest work function of 4.97 eV and the highest conductivity of 110 S/cm.</p>

The scanning tunneling microscope (STM) is one of the most advanced surface science tools capable of atomic resolution imaging and atomic manipulation. Unfortunately, STM has many time-consuming bottlenecks, like probe conditioning, tip instability, and noise artificing, which causes the technique to have low experimental throughput. This dissertation describes my efforts to address these challenges through automation and machine learning. It consists of two main sections each describing four projects for a total of eight studies. The first section details two studies on nanoscale sample fabrication and two studies on STM tip preparation. The first two studies describe the fabrication of graphene-based Josephson Junction devices and the factorial optimization of patterned carbon nanotube forest synthesis. The second two studies focus on the factorial optimization of electrochemical STM tip etching and automated STM tip functionalization via in-situ silicon nanocolumn growth. The second section details four studies on the use of neural networks for STM image and spectroscopy analysis. The third two studies are on the effectiveness of convolutional neural networks for identifying images of conditioned STM tips on the Au(111) surface and on the detection and metrology of atomic scale defects in single crystal tungsten diselenide, a transition metal dichalcogenide. The fourth two studies are on the use of variational autoencoders to autonomously classify scanning tunneling spectra of various materials, molecules, and surface structures and to identify bismuth and nickel atoms from cross sectional STM images of doped gallium arsenide.

The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS2 both experimentally and theoretically. At first the static charge density wave order in 1T-TaS2 is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS2. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS2 in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures also helps to explain a number of long-standing puzzles concerning the electronic self-organization in 1T-TaS2 : the ultrafast response to optical excitations, the high sensitivity to pressure as well as a mysterious commensurate phase that is commonly thought to be a special phase a so-called “Mott phase” and that is not found in any other isostructural modification.

The ability to convert photons into mechanical motion is of significant importance for many energy conversion and reconfigurable technologies. Establishing an optical-mechanical interface has been attempted since 1881; nevertheless, only few materials exist that can convert photons of different wavelengths into mechanical motion that is large enough for practical import. Recently, various nanomaterials including nanoparticles, nanowires, carbon nanotubes, and graphene have been used as photo-thermal agents in different polymer systems and triggered using near infrared (NIR) light for photo-thermal actuation. In general, most photomechanical actuators based on sp bonded carbon namely nanotube and graphene are triggered mainly using near infra-red light and they do not exhibit wavelength selectivity. Layered transition metal dichalcogenides (TMDs) provide intriguing opportunities to develop low cost, light and wavelength tunable stimuli responsive systems that are not possible with their conventional macroscopic counterparts. Compared to graphene, which is just a layer of carbon atoms and has no bandgap, TMDs are stacks of triple layers with transition metal layer between two chalcogen layers and they also possess an intrinsic bandgap. While the atoms within the layers are chemically bonded using covalent bonds, the triple layers can be mechanically/chemically exfoliated due to weak van der Waals bonding between the layers. Due to the large optical absorption in these materials, they are already being exploited for photocatalytic, photoluminescence, photo-transistors, and solar cell applications. The large breaking strength together with large band gap and strong light- matter interaction in these materials have resulted in plethora of investigation on electronic, optical and magnetic properties of such layered ultra-thin semiconductors. This dissertation will go in depth in the synthesis, characterization, development, and application of two- dimensional (2D) nanomaterials, with an emphasis on TMDs and molybdenum disulfide (MoS2), when used as photo-thermal agents in photoactuation technologies. It will present a new class of photo-thermal actuators based on TMDs and hyperelastic elastomers with large opto-mechanical energy conversion, and investigate the layer-dependent optoelectronics and light-matter interaction in these nanomaterials and nanocomposites. Different attributes of semiconductive nanoparticles will be studied through different applications, and the possibility of globally/locally engineering the bandgap of such nanomaterials, along with its consequent effect on optomechanical properties of photo thermal actuators will be investigated. Using liquid phase exfoliation in deionized water, inks based on 2D- materials will be developed, and inkjet printing of 2D materials will be utilized as an efficient method for fast fabrication of functional devices based on nanomaterials, such as paper-graphene-based photo actuators. The scalability, simplicity, biocompatibility, and fast fabrication characteristics of the inkjet printing of 2D materials along with its applicability to a variety of substrates such as plastics and papers can potentially be implemented to fabricate high-performance devices with countless applications in soft robotics, wearable technologies, flexible electronics and optoelectronics, bio- sensing, photovoltaics, artificial skins/muscles, transparent displays and photo-detectors.

Les liquides ioniques sont des fluides non volatiles, constitués de cations et d’anions, qui sont conducteurs ioniques, isolants électriques, et peuvent avoir des valeurs de capacité très élevées. Ces liquides sont susceptibles non seulement de remplacer les électrolytes solides, mais également de susciter des champs électriques intenses (>SI{10}{megavoltpercentimetre}) au sein d’une couche dite double couche électronique (electric double layer, EDL) à l’interface entre le liquide et le matériau sur lequel il est déposé. Ceci conduit à une injection de porteurs de charge bidimensionelle avec des densités allant jusqu’à SI{e15}{cm^{-2}}. Cet effet de grille remarquablement fort des liquides ioniques est réduit en présence d’états piégés ou de rugosité de surface. À cet égard, les dicalchogénures de métaux de transitions, de très haute qualité cristalline et atomiquement plats, font partis des semi-conducteurs les plus adaptés aux grilles EDL.Nous avons réalisé des transistors à effet de champ avec des EDL dans des nanotubes multi-couches de ce{WS2}, avec des performances comparables à celles de transistors EDL sur des ilots de ce{WS2}, et meilleurs que celles de nanotubes de ce{WS2} avec une grille solide. Nous avons obtenu des mobilités allant jusqu’à SI{80}{squarecentimetrepervoltpersecond} pour les porteurs n et p, et des ratios de courants on/off dépassant SI{e5}{} pour les deux polarités. Pour de forts dopages de type électron, les nanotubes ont un comportement métallique jusqu’à basse température. De plus, utiliser un liquide ionique permet de créer une jonction pn de manière purement électrostatique. En prenant avantage de cet effet, nous avons pu réaliser un transistor photoluminescent dans un nanotube.La possibilité de susciter de très forte densités de charges donne la possibilité d’induire des phases métalliques ou supraconductrices dans des semi-conducteurs a large bande interdite. Nous avons ainsi réussi à induire par effet de champ une phase métallique à basse température dans du diamant intrinsèque avec une surface hydrogénée, et nous avons obtenu un effet de champ dans du silicone dopé métallique.Les liquides ioniques offrent beaucoup d’avantages, mais leur champ d’application est encore réduit par l’instabilité du liquide, ainsi que par les courants de fuites et l’absorption graduelle d’impuretés. Un moyen efficace de s’affranchir de ces inconvénients, tout en conservant la possibilité d’induire de très fortes densités de porteurs, est de gélifier le liquide ionique. Nous sommes allés plus loin en fabriquant des gels ioniques modifiés, avec les cations fixés sur une seule surface et les anions libres de se mouvoir au sein du gel. Cet outil nous a permis de réaliser une nouvelle diode à effet de champ de faible puissance. / Ionic liquids are non-volatile fluids, consisting of cations and anions, which are ionically conducting and electrically insulating and hold very high capacitances. These liquids have the ability to not only to replace solid electrolytes, but to create strongly increased electric fields (>SI{10}{megavoltpercentimetre}) in the so-called electric double layer (EDL) on the electrolyte/channel interface, which leads to the injection of 2D charge carrier densities up to SI{e15}{cm^{-2}}. The remarkably strong gate effect of ionic liquids is diminished in the presence of trapped states and roughness-induced surface disorder, which points out that atomically flat transition metal dichalcogenides of high crystal quality are some of the semiconductors best suited for EDL-gating.We realised EDL-gated field-effect transistors based on multi-walled ce{WS2} nanotubes with operation performance comparable to that of EDL-gated thin flakes of the same material and superior to the performance of backgated ce{WS2} nanotubes. For instance, we observed mobilities of up to SI{80}{squarecentimetrepervoltpersecond} for both p- and n-type charge carriers and our current on-off ratios exceed SI{e5}{} for both polarities. At high electron doping levels, the nanotubes show metallic behaviour down to low temperatures. The use of an electrolyte as topgate dielectric allows the purely electrostatic formation of a pn-junction. We successfully fabricated a light-emitting transistor taking advantage of this utility.The ability of high charge carrier doping suggests an electrostatically induced metal phase or superconductivity in large gap semiconductors. We successfully induced low temperature metallic conduction into intrinsic diamond with hydrogen-terminated surface via field-effect and we observed a gate effect in doped, metallic silicon.Ionic liquids have many advantageous properties, but their applicability suffers from the instability of their liquid body, gate leakage currents and absorption of impurities. An effective way to bypass most of these problems, while keeping the ability of ultra-high charge carrier injection, is the gelation of ionic liquids. We even went one step further and fabricated modified ion gel films with the cations fixed on one surface and the anions able to move freely through the film. With this tool, we realised a novel low-power field-effect diode.

Die vorliegende Arbeit befasst sich mit Elektronenenergieverlustspektroskopie an unterdotierten Kupratsupraleitern und Übergangsmetalldichalcogeniden. Nach einem kurzen Abriss über die der experimentellen Methode zugrundeliegenden theoretischen Tatsachen folgen zwei experimentelle Kapitel. Für das prototypische Kupratsystem Ca2-xNaxCuO2Cl2 wird für verschiedene Dotierungskonzentrationen zunächst die Entwicklung der Ladungstransferanregungen untersucht. Man findet eine substanzielle Umverteilung des spektralen Gewichtes, verbunden mit einem starken Einbruch der Dispersion dieser Anregungen. Beides wird im Rahmen der Wechselwirkung mit Spinfreiheitsgraden innerhalb der Kupfer-Sauerstoff-Ebene diskutiert. Anschliessend erfolgt die Diskussion einer ausschließlich für zehnprozentige Dotierung auftretenden Symmetriebrechung der optischen Antwortfunktion, für die verschiedene mögliche Szenarien vorgeschlagen werden. Im Kapitel über die Dichalcogenide liegt der Fokus auf dem Verhalten des Ladungsträgerplasmons, das für alle Substanzen dieser Gruppe mit Ladungsordnung eine negative Dispersion aufweist. Dieses Verhalten läßt sich durch in-situ Interkalation zusätzlicher Ladungstraeger umkehren, so dass man eine dotierungsabhängige Plasmonendispersion erhält. Es werden verschiedene Szenarien für dieses Verhalten diskutiert. / The present thesis describes electron energy-loss spectroscopy on underdoped cuprate superconductors and transition-metal dichalcogenides. After a brief introduction into the experimental method there are two experimental chapters. For the prototype cuprate system Ca2-xNaxCuO2Cl2 the behavior of the charge-transfer excitations is investigated as a function of doping. The observed substantial redistribution of spectral weight and the accompanying breakdown of their dispersion is discussed in terms of a coupling to the spin degrees of freedom within the copper-oxygen plane. For x=0.1 there is a pronounced symmetry breaking in the optical response function which is discussed in terms of different possible scenarios. The chapter on the dichalcogenides focuses on the properties of the charge-carrier plasmon which shows a negative dispersion for all representatives of this family exhibiting a charge-density wave instability. This behavior can be influenced by in-situ intercalation of additional charges, the result being a doping dependent plasmon dispersion. Several approaches to reconcile these findings are considered.

La possibilité de créer des monocouches de dichalcogenures à métaux de transition (MoS2, WSe2,MoSe2 pour ceux étudiés dans ce manuscrit) a été démontrée récemment (2005) et a ouvert la voie à l’étude de ces matériaux sous leur forme 2D. Il apparaît depuis que les propriétés de ces semi-conducteurs sous leur forme monocouche offrent des perspectives intéressantes à la fois du point de vue de la physique fondamentale et des potentielles applications qui peuvent en découler ; en plus de bénéficier d’un fort couplage avec la lumière, l’existence d’un gap important (situé dans le visible, 1.7-1.8 eV) permet entre autres de réaliser des transistors d’épaisseur mono-atomique. Par ailleurs, la physique de ces matériaux est prometteuse pour les applications dans le domaine de l’optoélectronique. En effet, lorsque le matériau est affiné jusqu’à la monocouche atomique, son gap optique devient direct et la brisure de symétrie d’inversion associée au fort couplage spin-orbite provoque l’apparition de règles de sélection optique originales qui relient directement la polarisation de la lumière émise ou absorbée à une des deux vallées non-équivalentes de l’espace réciproque. Cela ouvre la possibilité d’explorer une nouvelle physique, basée sur l’indice de vallée et intitulée en conséquence vallée-tronique, avec comme perspectives futures la manipulation de l’indice de vallée et l’exploitation d’effetsliés à cette relation originale entre propriétés optiques et électroniques (effet vallée-Hall par exemple). Cemanuscrit de thèse regroupe une série d’expériences réalisées dans le but de comprendre et caractériser les propriétés optoélectroniques de ces matériaux. Un premier chapitre introductif présente le contexte scientifique de ces travaux de recherche et démontre l’origine des propriétés électroniques et optiques de ces matériaux via un modèle théorique simple. Le second chapitre présente en détails les échantillons étudiés ainsi que le dispositif expérimental utilisé lors des mesures. Enfin les chapitres 3 à 6 détaillent les expériences menées et les résultats obtenus ; le lecteur y trouvera des mesures de photoluminescence apportant la démonstration expérimentale des règles de sélection optique, l’identification des différents raies spectrales d’émission pour les différentstypes d’échantillons mentionnés plus haut ainsi que des mesures de photoluminescence résolues en temps permettant d’extraire la dynamique des propriétés des porteurs photo-générés. Une part importante de ce manuscrit est consacrée à l’étude expérimentale des propriétés excitoniques de ces matériaux dont la structure de bande électronique est finalement sondée via des études de magnéto-spectroscopie. / The possibility of isolating transition metal dichalcogenide monolayers by simple experimental means has been demonstrated in 2005, by the same technique used for graphene. This has sparked extremely diverse and active research by material scientists, physicists and chemists on these perfectly two-dimensional (2D) materials. Their physical properties inmonolayer formare appealing both fromthe point of view of fundamental science and for potential applications. Transition metal dichalcogenidemonolayers such asMoS2 have a direct optical bandgap in the visible and show strong absorption of the order of 10% per monolayer. For transistors based on single atomic layers, the presence of a gap allows to obtain high on/off ratios.In addition to potential applications in electronics and opto-electronics these 2D materials allow manipulating a new degree of freedom of electrons, in addition to the spin and the charge : Inversion symmetry breaking in addition to the strong spin-orbit coupling result in very original optical selection rules. The direct bandgap is situated at two non-equivalent valleys in k-space, K+ and K−. Using a specific laser polarization, carriers can be initialized either in the K+ or K− valley, allowing manipulating the valley index of the electronic states. This opens up an emerging research field termed "valleytronics". The present manuscript contains a set of experiments allowing understanding and characterizing the optoelectronic properties of these new materials. The first chapter is dedicated to the presentation of the scientific context. The original optical and electronic properties of monolayer transition metal dichalcogenides are demonstrated using a simple theoreticalmodel. The second chapter presents details of the samples and the experimental setup. Chapters 3 to 6 present details of the experiments carried out and the results obtained. We verify experimentally the optical selection rules. We identify the different emission peaks in the monolayer materials MoS2, WSe2 and MoSe2. In time resolved photoluminescence measurements we study the dynamics of photo-generated carriersand their polarization. An important part of this study is dedicated to experimental investigations of the properties of excitons, Coulomb bound electron-hole pairs. In the final experimental chapter, magneto-Photoluminescence allows us to probe the electronic band structure and to lift the valley degeneracy.

Cílem diplomové práce je popsat oxidaci nanotrubic sulfidu wolframičitého za zvýšených teplot v přítomnosti vodní páry. Na jejich povrchu se nejprve vytvoří nanočástice oxidu wolframu, ze kterých potom vyrůstají nanodráty. Na základě in-situ experimentů v rastrovacím elektronovém mikroskopu je navržen mechanismus reakce a ten je zjednodušeně popsán analyticky. Ukazuje se, že elektronový svazek má zásadní vliv na reakci.

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A new approach to the growth of MoSe2 thin films on epitaxial graphene on SiC(0001) by the use of modulated elemental reactants (MER) precursors has been reported. The synthesis applies a two-step process, where first an amorphous precursor is deposited on the substrate which self-assembles upon annealing. Films with a nominal thickness of about 1ML are successfully grown on epitaxial graphene monolayer as well as buffer layer samples. Characterization of the films is performed using XPS, LEED, AFM, and Raman spectroscopy. The films are nanocrystalline and show randomly rotated domains. This approach opens up an avenue to synthesize a number of new van-der-Waals systems on epitaxial graphene and other substrates.