Este trabalho consiste no projeto de uma Fonte de Tensão de Referência CMOS com coeficiente de temperatura inferior a 50 ppm/ºC. Esta fonte deve ser aplicada em receptores/transmissores de radio freqüência mas pode também ser utilizada em qualquer sistema analógico. A tecnologia utilizada foi a CMOS 0,35 µm da AMS (Austria Micro Systems) com quatro níveis de metal e dois de silício policristalino. A fonte de tensão implementada é do tipo Bandgap e utiliza dispositivos MOS em inversão fraca, um transistor bipolar parasitário e resistores de silício policristalino de alta resistividade. No circuito é produzida uma tensão PTAT (Proportional to Absolute Temperature) que somada a tensão base-emissor do transistor bipolar resulta numa tensão de saída independente da temperatura. O projeto e o desenho do layout desta fonte foram realizados. A partir do layout foram gerados netlists para simulações realizadas utilizando o software ELDO com o modelo MOS BSIM3v3, nas condições de operação típicas, worst speed e worst power. Através destas simulações verificou-se que o circuito atendia as especificações iniciais. O valor da tensão de saída, no entanto, apesar de estar próximo do valor desejado de 1,25 V, variou com as condições de simulação empregadas. Dois circuitos Bandgap diferentes foram enviados para fabricação: um circuito com resistores integrados (dimensões de 220 µm x 76 µm) e outro sem os resistores (dimensões de 190 µm x 36 µm). Este último permite, com o ajuste do valor dos resistores colocados externamente, modificar, se necessário, as condições de operação do circuito. Os circuitos foram caracterizados obtendo-se para o circuito com resistores integrados um coeficiente de temperatura inferior à 40 ppm/ºC, taxa de variação da saída com a tensão de alimentação próxima de 19 mV/V. O valor da tensão de saída a 50 ºC esteve entre 1,1835 V e 1,2559 V (1,25 V ± 67 mV). Para o circuito sem os resistores integrados, obteve-se um coeficiente de temperatura que chegou à 90 ppm/ºC, taxa de variação da saída com a tensão de alimentação inferior à 28 mV/V. O valor da tensão de saída a 50 ºC esteve entre 1,247 V e 1,2588 V (1,25 V ± 9 mV). A faixa de temperatura utilizada para as medidas foi de -30 ºC a 100 ºC. O consumo de corrente dos circuitos é de aproximadamente 14 µA e seu funcionamento é garantido para tensões de alimentação tão baixas quanto 1,8 V. / This work consists in the design of a CMOS Voltage Reference Source with a temperature coefficient inferior to 50 ppm/ºC. This voltage source should be applied in radio frequency receptor/transmitter but can be also applied in any analog system. The technology employed in the design is the CMOS 0.35 µm from the AMS (Austria Micro Systems) with four metal levels and two poly-silicon levels. The implemented voltage source is of the Bandgap type and uses MOS devices in weak inversion, a parasitic bipolar transistor, and resistors made with high resistive poly-silicon. The circuit produces a PTAT (Proportional to Absolute Temperature) voltage that is added to the bipolar transistor base-emitter voltage to build an output voltage independent of temperature. The project and the drawing of the layout of the circuit had been carried out. The netlists of the circuit were generated from the layout and they were employed in simulations done with the software ELDO and the BSIM3v3 MOS model, in typical, worst speed, and worst power conditions. Through these simulations it was verified that the circuit reached the initial specifications. The value of the output voltage, however, although being next to the desired value of 1.25 V, varied with the employed simulation conditions. Two different Bandgap circuits had been sent to the foundry: a circuit with integrated resistors (dimensions of 220 µm x 76 µm) and another one without the resistors (dimensions of 190 µm x 36 µm). This last one allows, with the adjustment of external resistor values, modifying, if necessary, the operation conditions of the circuit. The circuits had been characterized and the circuit with integrated resistors has a temperature coefficient inferior to 40 ppm/ºC, an output variation rate with the power supply close to 19 mV/V. The output voltage value at 50 ºC is between 1.1835 V and 1.2559 V (1.25 V ± 67 mV). The circuit without the resistors has a temperature coefficient as high as 90 ppm/ºC, an output variation rate with the power supply inferior to 28 mV/V. The output voltage value at 50 ºC is between 1.247 V and 1.2588 V (1.25 V ± 9 mV). The temperature range used in the measurements was from -30 ºC to 100 ºC. The current consumption of the circuits is approximately of 14 µA, and they operate with power supply voltages as low as 1.8 V.

Made available in DSpace on 2017-07-21T19:25:59Z (GMT). No. of bitstreams: 1 Vanessa Elvira Bonometo.pdf: 1928189 bytes, checksum: 6d3aff421841c38eb85f9fcb925b0243 (MD5) Previous issue date: 2010-06-22 / Stocks and stability of soil organic matter (SOM), even accounting approximately 5% of soil total, are indicators of quality and sustainability of the management system to which the soil is submitted, it has influence on nutrient availability for plants, assists in erosion retention, increases aggregates stability and assists in carbon sequestration. As labile SOM becomes stable through the humification process, affected by climate, soil type and management systems, the molecular structures gain complexity resulting in the formation of groups such as fluorescent aromatic rings and quinines, which can be evaluated by spectroscopy techniques. The purpose of this research was to use spectroscopic techniques to measure the humification of organic matter in a Cambisol, which comes from Irati – PR, submitted to two management systems: conventional tillage and no-tillage (six years and nine years). The forest was used as comparison. Analysis were performed using laser induced fluorescence (LIF) in whole soil (no chemical or physical treatment), and fractions obtained by physical fractionation by granulometry: (clay), (silt) e (fine sand) e (sand). The samples were also analyzed for fluorescence of humic acids, obtained by chemical fractionation of soil and absorption spectroscopy, UV-Visible ( ratio). The results of these tests show no difference in the degree of humification of SOM between management systems. / Os estoques e a estabilidade da matéria orgânica do solo (MOS), mesmo representando cerca de 5% do total do solo, são indicadores da qualidade e da sustentabilidade do sistema de manejo ao qual o solo está submetido, pois tem influência na disponibilidade de nutrientes para as plantas, auxilia na retenção de processos erosivos, aumenta a estabilidade de agregados e auxilia no sequestro de carbono. À medida que a MOS lábil torna-se estável por meio do processo de humificação, afetado pelo clima, tipo de solo e sistemas de manejo, as estruturas moleculares ganham complexidade, resultando na formação de grupos fluorescentes como anéis aromáticos e quinonas, que podem ser avaliados por técnicas espectroscópicas. O objetivo desta pesquisa foi utilizar técnicas espectroscópicas para medir a humificação da matéria orgânica de um Cambissolo Háplico, proveniente do município de Irati – PR, submetidos a dois sistemas de manejo: plantio convencional e plantio direto (de seis e de nove anos). Foi utilizada a mata para comparação. Foram realizadas análises de fluorescência induzida a laser (FIL) nas amostras de solo inteiro (sem nenhum tratamento físico ou químico) e das suas fracões obtidas através de fracionamento físico granulométrico: (argila), (silte) e (areia fina) e (areia grossa). Também foram realizadas análises de fluorescência dos ácidos húmicos, obtidos por meio de fracionamento químico do solo, e espectroscopia de absorção de UV-Visível (razão ). Os resultados desta análise mostram que não houve diferença no grau de humificação da MOS entre os sistemas de manejo.

Neste trabalho, foi realizado um estudo da caracterização elétrica dos ISFETs com estrutura Si/SiO2/Si3N4, utilizando pseudoeletrodos de Pt, Ag e Au como alternativas aos eletrodos convencionais para medições de pH. Primeiramente, foram empregados três métodos reportados na literatura (extrapolação linear para obtenção da tensão de limiar, segunda derivada para obtenção da tensão de limiar e corrente de sublimiar, respectivamente) com o objetivo de obter a sensibilidade dos ISFETs (mV/pH) e analisar a confiabilidade dos resultados utilizando eletrodo de referência padrão de Ag/AgCl. Posteriormente, tendo como base o eletrodo de Ag/AgCl, foram estudados os desempenhos de pseudoeletrodos de Pt, Ag e Au nas medidas de pH. Como resultado, observou-se que os pseudoeletrodos de Pt e Ag apresentaram sensibilidades compatíveis com o eletrodo de referência padrão de Ag/AgCl (~50mV/pH) para pH ácido na faixa de 1 a 3. Já o pseudoeletrodo de Au, manteve um comportamento aproximadamente linear ao longo de toda a faixa de pH estudada (1 a 10), porém, com sensibilidade inferior na faixa de 32 à 34mV/pH. / In this work, it is presented a study of the electrical characterization of Si/SiO2/Si3N4 estructured ISFETs using Pt, Ag and Au pseudoelectrodes as alternative references to the conventional ones for pH measurements. At first, it was used three different methods (linear extrapolation method to obtain the threshold voltage, second derivative method to obtain the threshold voltage and subthreshold-current method, respectively) having as objective to obtain the sensitivity of the ISFETs (mV/pH) and to analyze the reliability of the results using the standard Ag/AgCl reference electrode. Subsequently, using the Ag/AgCl electrode as a base for comparation, it was studied the performance of Pt, Ag and Au pseudoelectrodes for pH measurement. As a result, it was observed that the Pt and Ag electrodes presented sensitivity similar to the standard Ag/AgCl reference electrode (~50mV/pH) for pH in the range of 1 to 3. On the other hand, the Au pseudoelectrode presented an approximately linear behavior in all studied range of the pH (1 to 10), but, with lower sensitivity varying in the range of 32 to 34mV/pH.

Neste trabalho foram crescidos filmes finos de oxinitreto de silício (SiOxNy) por processamento térmico rápido (RTP) utilizando um forno térmico convencional adaptado, objetivando fabricar células solares MOS com baixo custo agregado e bom rendimento de conversão de baixas intensidades luminosas em energia elétrica de forma reprodutível. A receita de oxinitretação otimizada foi desenvolvida em ambiente misto de 5N2:1O2 na temperatura de 850°C para tempos de processo, na faixa de 10 a 80s seguido por uma passivação em 2L/min de N2 por 80s. Os dielétricos crescidos foram caracterizados fisicamente quanto à espessura (entre 1,50 e 2,95nm), à microrugosidade (<0,95nmRMS) e à concentração de nitrogênio (1,0-2,1%atm). As características de tunelamento foram investigadas em capacitores MOS e apontaram para a existência de armadilhas interfaciais do tipo K capazes de armazenar cargas positivas. Nas células solares MOS, a corrente de fundo foi característica para todos os processos de oxinitretação empregados (~0,5-2µA/cm2) e apresentaram níveis de resposta à luz incidente na faixa de 1 a 8mA/cm2 compatível com aplicações de conversão de energia em ambientes internos e externos (energy harvesting). A característica densidade de corrente x tensão de porta (JxVG) das células solares apresentou um comportamento aproximadamente linear desde a densidade de corrente de curto-circuito (JSC) até a tensão de curto-circuito (VOC) implicando em potência gerada máximas (PGmáx) de até centenas de µA/cm2 para VG ? VOC/2 para uma ampla faixa de intensidade radiante incidente (11,8 - 105,7mW/cm2) alcançando rendimentos de conversão de até 5,5%. / In this work, silicon oxynitrides (SiOxNy) were grown by means of a homemade Rapid Thermal Processing (RTP). The goal was to manufacture MOS solar cells with a reduced price and reasonable light conversion efficiency for low light intensity. The optimized oxidation recipe consisted of using an environment with gas mixture of 5N2:1O2 at a temperature of 850°C and different processing times in the range of 10 to 80s followed by a passivation step in ultrapure N2 (2L/min) at the same temperature of 850oC for 80s. The oxynitrides were grown with thickness in the range of 1.50 to 2.95nm with surface microroughness lower than 0.95nmRMS and nitrogen concentration in the range of 1.0 to 2.1%atm. The tunneling characteristics were studied with the aid of MOS capacitor and K-type interfacial traps related to Si(p)/Si?N structure were detected positively charged for VG > 0. The background current in the MOS solar cells (~0.5-2µA/cm2) were similar for all samples and the current response to the incident light was in the range of 1 to 8mA/cm2, which is compatible with energy conversion for indoor and outdoor environments (energy harvesting). The current density x gate voltage (JxVG) characteristics of the MOS solar cells presented a nearly linear behavior since the short-circuit current density (JSC) till to the open circuit voltage (VOC) so that the maximum generated power was of hundreds of µA/cm2 for VG ? VOC/2 for a large range of radiant intensities (11.8 - 105.7 mW/cm2) and achieving efficiency conversion up to 5.5%.

This dissertation is composed of two independent studies: Cellular research and WBAN (Wireless Body Area Network) research. Both investigations are directed towards improving the system performance in wireless communication systems in terms of Quality of Service (QoS) and system capacity. For the Cellular research part, this dissertation will present novel user-specific QoS requirements as defined by their respective Mean Opinion Score (MOS) formulas, and associated schedulers for wireless applications and systems that optimize spectral allocation. User-specific QoS requirements are defined and several methods to make use of such requirements to maximum the spectral utilization are presented. Five User-Specific QoS Aware (USQA) schedulers are proposed that consider the user-specific QoS requirements in the allocation of spectral resources. Schedulers are introduced that dynamically adapt to the user-specific QoS requirements to improve quality as measured by the MOS, or the system capacity, or can improve both the quality and system capacity. Due to the different cell deployment arrangements and inter-cell interference in heterogeneous networks in comparison to homogeneous networks, the USQA scheduling is also analyzed and the system performance is evaluated in such networks. Throughput improvements of File Transfer Protocol (FTP) applications benefiting from the rate adaptation and MAC (Media Access Control) scheduling algorithms for video applications that incorporate user-specific QoS requirements to improve system capacity are demonstrated. Another novel approach recognizes that the user-specific frequency sensitivity can be used to improve capacity. There is considerable variation in the audible range of frequencies that can be perceived by individuals, especially at the high frequency end, which is primarily affected by a gradual decline with age. This can be utilized to improve the system performance by personalizing the VoIP codecs and decreasing the user's source data rate for people from an older age group and thus increase the system capacity. Given the potentially substantial system performance gain resulting from the USQA schedulers, it is critical to analyze their feasibility and complexity in practical LTE (4G cellular) and future wireless systems. From the LTE system perspective, LTE QoS end-to-end signaling procedures are addressed, and corresponding protocol adaptations are analyzed in order to support the USQA schedulers. In addition, the optimal scheduling period is analyzed that trades off between performance gain and implementation complexity. In the WBAN research, MIMO (Multiple Input Multiple Output) in vivo antenna technologies are introduced and are motivated by the high data rate requirements of wirelessly transmitted low-delay High Definition (HD) video during Minimally Invasive Surgery (MIS). MIMO in vivo technologies are proposed to be used in the in vivo environments to enhance and determine the maximum data transmission rate while satisfying the Specific Absorption Rate (SAR) power limitations. Various factors are considered in the MIMO in vivo study including antenna separation, antenna angular positions, human body size, and system bandwidth to determinate the maximum data rate that can be supported.

Les composants actifs des convertisseurs de puissance empoyés pour la traction ferroviaire 1200 volts sont actuellement des IGBTs. Ceux-ci sont handicapés par leurs pertes en commutation et leur emballement thermique. L'utilisation de transistors MOS de puissance permettrait de pallier ces inconvénients. Néanmoins, à ces niveaux de tension, les transistors MOS sont pénalisés par leur compromis "tenue en tension/résistance passante spécifique". Dans le cadre de ces travaux de thèse, nous avons étudié différents principes pour concevoir une nouvelle structure MOS performante. Nous avons arrêté notre choix sur une structure se basant sur le concept de la superjonction, réalisé par gravure profonde et diffusion de bore. Théoriquement, cette structure atteint 13 mOcm2 pour 1200 V. Une grande partie des travaux de recherche a consisté à optimiser cette structure. Pour cela, nous avons étudié l'influence des paramètres technologiques et géométriques sur le compromis "tenue en tension/résistence passante spécifique". Nous avons également développé une terminaison innovante afin d'assurer la tenue en tension du composant. Il a ensuite fallu identifier les étapes critiques du procédé de fabrication. A partir de ces résultats, nous avons réalisé une diode 1200 V qui nous a permis de valider certaines briques technologiques.

Les principaux algorithmes de placement et d'interconnexion sont passes en revues. On propose ensuite une classification des représentations symboliques de circuits intégrés, et on s'intéresse aux circuits représentés à l'aide du symbolisme défini pour le MD-MOS. Une methode de placement des portes et de traces des connexions automatises est présentée pour les circuits MD-MOS organisés en cellules à une et deux lignes d'alimentation.

Les mémoires volatiles représentent aujourd'hui 30% du marché des mémoires à semi-conducteurs. La tendance générale actuelle consiste à mettre au point des produits nomades capables d'emmagasiner et de restituer une grande quantité d'informations en peu de temps et pouvant fonctionner avec une faible tension d'alimentation. Dans ce cadre, cette thèse s'intéresse à la possibilité d'augmenter les performances d'une mémoire non-volatile de type EEPROM en termes de vitesse de programmation et de baisse des tensions de programmation. Nous étudions aussi la modélisation de la fermeture de la fenêtre de programmation en fonction du nombre de cycles programmation/effacement en extrayant les paramètres Fowler-Nordheim α et β sur des capacités équivalentes soumises à une contrainte électrique dynamique égale à celle que subit l'oxyde tunnel d'une mémoire EEPROM lors d'un test en endurance. Les simulations sont effectuées à l'aide d'un modèle physique compact de cellule EEPROM basé sur le calcul du potentiel de surface et du potentiel de grille flottante. Ce modèle prend en compte la non-linéarité de la capacité de la zone tunnel due à la désertion de la grille flottante en polysilicium. Nous montrons que la durée de programmation d'une cellule EEPROM peut être réduite à 10µs tout en ayant une endurance supérieure à 50000 cycles programmation/effacement. De plus, les tensions de programmation de la cellule peuvent être divisées par deux en les répartissant entre la grille de contrôle et le drain. Ceci implique l'utilisation de tensions négatives. Enfin, l'émulation du vieillissement de l'oxyde tunnel sur des capacités équivalentes montre une fermeture de la fenêtre de programmation supérieure à celle mesurée sur une cellule EEPROM. Cette fermeture plus importante est attribuée à une dégradation additionnelle de l'oxyde tunnel due aux mesures de courant Fowler-Nordheim en vue d'extraire les paramètres Fowler-Nordheim.

Ce travail de thèse a porté sur la réalisation d'un capteur d'espèces biologiques en solution à partir de réseaux organisés de nanofils de silicium opérant sur le mode d'un transistor à effet de champ à "grille biologique". Cette nouvelle génération de biocapteurs vise à être intégrée dans des systèmes de détection ultrasensibles et compacts destinés à des applications médicales et militaires. Nous proposons la réalisation des transistors à nanofils de silicium suivant une approche dite "top-down". Cette méthode, qui consiste à graver les nanofils dans une couche mince de silicium, permet un contrôle précis de leur positionnement, contrairement à l'approche "bottom-up", qui utilise des nanofils obtenus par croissance CVD. Ceci permet l'obtention de transistors aux caractéristiques électriques reproductibles et facilite leur intégration. La première partie de nos travaux a ainsi concerné le design et la fabrication de transistors à nanofils de silicium suivant une approche top-down. Ce travail de développement technologique a permis la réalisation de composants que nous avons caractérisés à sec puis adaptés à un fonctionnement en milieu liquide. La seconde partie de nos travaux a porté sur la réalisation de mesures en solution. La validation du fonctionnement de notre transistor en mode capteur a été démontrée par le suivi de variations de pH. Notre étude a ensuite eu pour objet la mise en valeur de l'ensemble des paramètres influençant les performances du capteur (choix de la tension de grille, de la force ionique, influence de la microfluidique, ...), la compréhension de ces facteurs étant indispensable à la réalisation de mesures biologiques fiables.

<p>In this project a new type of metal oxide semiconductor (MOS) sensor for biosensing was investigated. With the use of a porous gold film as aninternal reference electrode, measurements of pH were performed in liquid. This new approach for liquid measurements demands new methods andstudies to increase the conductivity and adhesion in liquid of the porous gold film. The films have been deposited, either by sputtering orevaporation. Extensive studies included the investigation of depositions parameters on film structure and investigating the film morphology. Thesurface structure was studied with a scanning electron microscope (SEM). pH measurements were preformed with promising results. The adhesionof the electrode was greatly improved by using grains of titanium underneath the gold film. This new approach could lead to new applications anddevices for MOS sensors and its sensor relatives.</p>