A l’heure où la miniaturisation des technologies CMOS sur substrat massif atteint des limites, la technologie FDSOI (silicium sur isolant totalement déserté) s’impose comme une alternative pour l’industrie en raison de ses meilleures performances. Dans cette technologie, l’utilisation d’un substrat SOI ultramince améliore le comportement des transistors MOSFETs et garantit leur intégrité électrostatique pour des dimensions en deçà de 28nm. Afin de lui intégrer de nouvelles fonctionnalités, il devient nécessaire de développer des applications dites « haute tension » comme les convertisseurs DC/DC, les régulateurs de tension ou encore les amplificateurs de puissance. Cependant les composants standards de la technologie CMOS ne sont pas capables de fonctionner sous les hautes tensions requises. Pour répondre à cette limitation, ces travaux portent sur le développement et l’étude de transistors MOS haute tension en technologie FDSOI. Plusieurs solutions sont étudiées à l’aide de simulations numériques et de caractérisations électriques : l’hybridation du substrat (gravure localisée de l’oxyde enterré) et la transposition sur le film mince. Une architecture innovante sur SOI, le Dual Gound Plane EDMOS, est alors proposée, caractérisée et modélisée. Cette architecture repose sur la polarisation d’une seconde grille arrière pour offrir un compromis RON.S/BV prometteur pour les applications visées. / Nowadays the scaling of bulk silicon CMOS technologies is reaching physical limits. In this context, the FDSOI technology (fully depleted silicon-on-insulator) becomes an alternative for the industry because of its superior performances. The use of an ultra-thin SOI substrate provides an improvement of the MOSFETs behaviour and guarantees their electrostatic integrity for devices of 28nm and below. The development of high-voltage applications such DC/DC converters, voltage regulators and power amplifiers become necessary to integrate new functionalities in the technology. However, the standard devices are not designed to handle such high voltages. To overcome this limitation, this work is focused on the design of a high voltage MOSFET in FDSOI. Through simulations and electrical characterizations, we are exploring several solutions such as the hybridization of the SOI substrate (local opening of the buried oxide) or the implementation in the silicon film. An innovative architecture on SOI, the Dual Ground Plane EDMOS, is proposed, characterized and modelled. It relies on the biasing of a dedicated ground plane introduced below the device to offer promising RON.S/BV trade-off for the targeted applications.

Orientador: Vânia Niéto Brito de Souza / Resumo: A infecção pelo Mycobacterium leprae (ML) estimula um processo de desdiferenciação e proliferação das células de Schwann (SCs) que pode contribuir para a disseminação do bacilo. Os macrófagos (MOs) são células efetoras da resposta imune que promovem a eliminação de patógenos, entretanto, na hanseníase são colonizados pelo ML. Sabe-se que os MOs podem apresentar uma polarização funcional na qual os MOs M1 apresentam características pró-inflamatórias e microbicidas enquanto os MOs M2 atuam na reparação tecidual e possuem perfil anti-inflamatório. SCs infectadas pelo ML produzem mediadores capazes de interferir com a função dos MOs aumentando sua sobrevida e promovendo sua migração. Embora diferentes programas funcionais tenham sido observados em MOs de pacientes com formas polares da hanseníase a influência de SCs nesse processo não é sabida. Neste estudo avaliamos se SCs infectadas pelo ML podem interferir na polarização de MOs murinos derivados de medula óssea. Para tanto, culturas primárias de SCs murinas foram infectadas experimentalmente com bacilos viáveis e cocultivadas com MOs. Nossos resultados indicam que a produção de óxido nítrico foi baixa nas culturas de MOs após a infecção com o bacilo, mas mostrou-se aumentada nas coculturas de MOs e SCs infectadas pelo ML. A infecção com ML não induziu produção significante das citocinas IL-6, IL-10 e TNF em culturas de MOs e SCs, entretanto, a interação entre MOs e SCs infectadas com o bacilo resultou em aumento na produção de... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: Mycobacterium leprae (ML) infection stimulates dedifferentiation and proliferation of Schwann cells (SCs) that may contribute to the spread of the bacillus. Macrophages (MOs) are effector cells of the immune response that promote the elimination of pathogens, however, in leprosy they are colonized by ML. It is known that MOs can present a functional polarization in which M1 MOs show pro-inflammatory and microbicidal activities while M2 MOs act in tissue repair presenting an anti-inflammatory profile. SCs infected by ML produce mediators able to interfere with MOs function, increasing their survival and promoting their migration. Although different functional programs have been observed in MOs from patients with polar forms of leprosy, the influence of SCs in this process is not known. In this study we evaluated whether SCs infected with ML could interfere in the polarization of murine MOs derived from bone marrow. For this purpose, primary cultures of murine SCs were experimentally infected with viable bacilli and co-cultivated with MOs. Our results indicate that nitric oxide production was low in cultures of MOs after infection with the bacillus, but it was increased in the co-cultures of MOs and ML-infected SCs. The infection with ML did not induce significant production of IL-10, TNF and IL-6 in cultures of MOs and SCs, however, the interaction between MOs and ML infected-SCs resulted in increased production of cytokines, mainly IL-10, inducing a decrease in the TNF/IL-10 ... (Complete abstract click electronic access below) / Mestre

Context: In telecommunications, it is important for network providers to have a knowledge of generic relationships between multi-dimensional QoE and QoS parameters to be able to provide quality service to the customers, keeping in mind the real-time constraints such as time, money and labor. So far, there have been several research works on formulating a generic quantitative relationship between a single QoE and a single QoS parameter in literature. As per the research conducted, the most common examples of mapping between a QoS parameter and QoE were found to be the exponential model (the IQX hypothesis), the logarithmic model (the WeberFechner law), and the power model. However, it has been less common to study the multi-dimensional relationship between QoE and QoS parameters. Objective: The purpose of this paper here is to discuss the impact of several QoS parameters on QoE. The proposal put forth by existing literature is that a multiplicative model better explains the impact of QoS parameters on the overall quality as perceived by the user. The proposal was, however, never backed by subjective data. Method: We have performed several subjective tests in this regard to test our hypothesis. Non-adaptive streaming of videos in a monitored server-client setup was used. In these tests, the objective was to obtain the Mean Opinion Scores(MOS) for varying QoS parameters such as the initial delay and the number of stalls. Network shaping was used for introducing the disturbances in the videos. The experimental setup consisted of a total of 27 experiments per user and each user was handed over a questionnaire. The questionnaire mainly consisted of four questions aimed at gathering feedback from the users regarding the quality of the videos shown to them. Users were asked to mark their MOS on a continuous scale. The videos were subjected to three different values of Initial Delay, Stalls and Resolution, each. The average duration per stalls throughout the experiments was maintained at 2 seconds. Results: Data was collected from 15 users. Thus, in total 405 MOS values were recorded for 27 combinations of Initial Delay, number of Stalls and Resolution. The impact of initial delay and stalls on the QoE as indicated by the MOS was then categorized and studied for each Resolution. With the help of regression tools in MATLAB and Solver in Excel, possible models that explain the multi-dimensional QoS-QoE relationship were studied. Conclusion: The results mostly indicated towards the multiplicative model just as proposed by the existing literature. Also, it was observed that Initial Delay alone has not much impact on the overall QoE. So, the impact of Initial Delay could be described either by an additive or a multiplicative model. However, the impact of Stalls on QoE was found to be multiplicative.

Foram estudadas as propriedades elétricas de estruturas MOS envolvendo materiais com Zr e Hf: Al/HfO2/Si, Al/HfAlO/Si, Al/ZrO2/Si e Al/ZrAlO/Si depositadas por JVD (Jet Vapor Deposition) submetidas a diferentes doses de implantação de nitrogênio e tratamentos térmicos; Au/HfO2/Si e Au/HfxSiyOz/Si preparadas por MOCVD (Metal-Organic Chemical Vapor Deposition) e Au/HfxSiyOz/SiO2/Si preparadas por sputtering reativo em O2 submetidas a tratamentos térmicos distintos. Para isso, além das medidas de C-V e I-V padrão, foi desenvolvido o método da condutância para estudo da densidade de estados na interface dielétrico/Si, o qual mostrou-se mais viável para as estruturas com dielétricos alternativos. A inclusão de Al na camada de dielétrico, bombardeamento por íons de nitrogênio, e tratamentos térmicos rápidos em atmosferas de O2 e N2 foram responsáveis por mudanças nas propriedades das amostras. Diversos mecanismos físicos que influenciam as propriedades elétricas dessas estruturas foram identificados e discutidos. Foi constatado que as interfaces com menores densidades de estados foram as das amostras preparadas por MOCVD e sputtering reativo.

This diploma thesis focuses on the issue of evaluation VoIP services (from the perspective of QoE) and their quality in university network. It includes theoretical basics of VoIP testing, principals of QoS, and also overview of QoE/MOS measurement methods. Next part describes the test bed and methodology used for measurements and evaluating of results. Site survey results and VoIP quality measurement are evaluated at the end, followed by recommendations that can lead to better VoIP quality in MENDELU wireless network.

Behavioral skills training (BST) has been widely used to effectively and quickly instruct learners with limited knowledge in behavior analytic skills. A training package composed of didactic instruction presented via PowerPoint, modeling, rehearsal, feedback and in vivo components were utilized to instruct two mothers of children with autism spectrum disorders to deliver learning trials with their child to contrive MOs to increase their manding repertoires. A multiple probe across participants design was used to assess the effects of BST on the participant's performance. Prior to the beginning of the study, participants were instructed to systematically identify child's reinforcers by delivering a paired choice preference assessment. Mothers were involved in choosing the manding targets used in the child's instruction. BST was effective in demonstrating rapid acquisition of skills taught to both mothers compared to baseline performances. Although child's behavior increased over pretest measures, it did not improve significantly due variable responding. Time constraints and child's excessive variable responding lead to termination of the study.

Background: In the recent years, the focus of research has shifted to Quality of Experience(QoE) to maintain the user satisfaction levels and fulfill their expectations of the serviceoffered. Numerous work has been established in finding the relationship between the networklayer and QoE. But, it is fact that the transport layer is much closer to the end-user than thenetwork layer in the TCP/IP communication protocol suite. Thus, any changes in the degreeof satisfaction or degree of annoyance are directly reflected onto transport layer than on thenetwork layer. So, it becomes more significant to study the behavior of user satisfaction inrelation to transport layer than the network layer. Objectives: This research is to relate the behavior of TCP to QoE. The main considerations tobridge the gap between them are: (a) Analyzing the effects of using different versions of TCPon server and client side, (b) Monitoring and analyzing the intensity of TCP traffic in thereverse direction and (c) Investigating TCP control flags from client to server. Methods: QoE related parameters used in this research are: (a) Quality of video i.e., MOS, (b)Degree of disturbance caused by initial delay, (c) Degree of disturbance caused by jerkinessand (d) Degree of disturbance caused by freezes. Effects of network impairments like delay,jitter and packet loss are considered in this research. NetEm is used as the traffic emulationsoftware to shape the traffic. The packet capture analysis of traffic exchange is implementedusing tcpdump. Results and Conclusions: The aim of this research is to provide a passive-estimation methodto assess the user perceived performance. The results of this research provide valuablecontribution to service providers/operators to note the early warning signals from TCP reversetraffic to evaluate the decrease of user satisfaction level and try to cope or/and recover fromimpairments in the network. This research also provides a scope for future researchers toinvestigate other protocols both in transport and application layers.

Foram estudadas as propriedades elétricas de estruturas MOS envolvendo materiais com Zr e Hf: Al/HfO2/Si, Al/HfAlO/Si, Al/ZrO2/Si e Al/ZrAlO/Si depositadas por JVD (Jet Vapor Deposition) submetidas a diferentes doses de implantação de nitrogênio e tratamentos térmicos; Au/HfO2/Si e Au/HfxSiyOz/Si preparadas por MOCVD (Metal-Organic Chemical Vapor Deposition) e Au/HfxSiyOz/SiO2/Si preparadas por sputtering reativo em O2 submetidas a tratamentos térmicos distintos. Para isso, além das medidas de C-V e I-V padrão, foi desenvolvido o método da condutância para estudo da densidade de estados na interface dielétrico/Si, o qual mostrou-se mais viável para as estruturas com dielétricos alternativos. A inclusão de Al na camada de dielétrico, bombardeamento por íons de nitrogênio, e tratamentos térmicos rápidos em atmosferas de O2 e N2 foram responsáveis por mudanças nas propriedades das amostras. Diversos mecanismos físicos que influenciam as propriedades elétricas dessas estruturas foram identificados e discutidos. Foi constatado que as interfaces com menores densidades de estados foram as das amostras preparadas por MOCVD e sputtering reativo.

abstract: Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases. / Dissertation/Thesis / M.S. Materials Science and Engineering 2013

Foram estudadas as propriedades elétricas de estruturas MOS envolvendo materiais com Zr e Hf: Al/HfO2/Si, Al/HfAlO/Si, Al/ZrO2/Si e Al/ZrAlO/Si depositadas por JVD (Jet Vapor Deposition) submetidas a diferentes doses de implantação de nitrogênio e tratamentos térmicos; Au/HfO2/Si e Au/HfxSiyOz/Si preparadas por MOCVD (Metal-Organic Chemical Vapor Deposition) e Au/HfxSiyOz/SiO2/Si preparadas por sputtering reativo em O2 submetidas a tratamentos térmicos distintos. Para isso, além das medidas de C-V e I-V padrão, foi desenvolvido o método da condutância para estudo da densidade de estados na interface dielétrico/Si, o qual mostrou-se mais viável para as estruturas com dielétricos alternativos. A inclusão de Al na camada de dielétrico, bombardeamento por íons de nitrogênio, e tratamentos térmicos rápidos em atmosferas de O2 e N2 foram responsáveis por mudanças nas propriedades das amostras. Diversos mecanismos físicos que influenciam as propriedades elétricas dessas estruturas foram identificados e discutidos. Foi constatado que as interfaces com menores densidades de estados foram as das amostras preparadas por MOCVD e sputtering reativo.