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The effect of proton (H+) irradiation on uranium mononitride (UN) and UN compositefuel with 10 at.% ZrN (UN10at%ZrN) was examined. Protons of 2 MeV with fluences of1E17, 1E18, 1E19 and 1E20 ions/cm2 were accelerated towards the fabricated samples in orderto investigate the evolution of the micro-structure. Stopping and Range of Ions in Matter(SRIM) calculations were performed to determine the displacements per atom associatedwith the depth of the highest damage, for each fluence.X-Ray diffraction (XRD) was used in both samples to identify the chemical composition ofeach pellet, which revealed the low presence of oxygen. Based on scanning electron microscopy(SEM), deterioration of the samples surface was observed, as the proton fluence increased.The applied stress due to the irradiation, led to the cracking of the pellets at the highestfluences. Blisters and craters appear to surround the cracked region, which might originatefrom the significant levels of hydrogen implantation within the samples.From Electron backscatter diffraction (EBSD) analysis, the grain size of the UN10at%ZrNcomposite was found to be smaller than in UN, due to the nano-particle nature of the ZrNpowder. The latter technique was also used to observe the elevated irradiated regions, whichwere further investigated by atomic force microscopy (AFM). Nano-indentation detectedirradiation hardening for both samples in the irradiated regions. Focused ion beam (FIB)milling was applied to remove lamellas from the cracked regions in both UN and compositesamples in order to be analyzed by transmission electron microscopy (TEM). The latter mightreveals the formation of dislocation loops in the irradiated areas. / Effekten av protonbestrålning på urannitrid (UN) och UN-kompositbränsle med 10 at.% ZrN (UN10at%ZrN) undersöktes. Protoner på 2 MeV med total dos på 1E17, 1E18, 1E19 och 1E20 joner/cm2 accelererades mot de tillverkade proverna för att undersöka utvecklingen av mikrostrukturen under bestrålning. SRIM-beräkningar (Stopping and Range of Ions in Matter) utfördes för att bestämma profilen på skadan och jonimplanteringen i förhållande till djupet, för varje dosnivå.  Röntgendiffraktion (XRD) användes på båda proverna för att identifiera den kemiska sammansättningen av varje kuts, vilket visade att syrehalten var låg. Med hjälp av svepelektronmikroskopi (SEM) observerades en försämring av provernas yta när protonflödet ökade. Den resulterande mekaniska spänningen överskred provets brottstyrka på djupet, eftersom nitriderna inte är så duktila, vilket ledde till sprickbildning i proverna som utsattes för de högsta doserna. Blåsor och kratrar omger det spruckna området, vilket beror på betydande väteimplantering i provet.  Genom electron backscatter diffraction analys (EBSD) konstaterades att kornstorleken hos UN10at%ZrN-kompositen var mindre än hos UN, på grund av ZrN-pulvrets nanopartikelnatur. Den sistnämnda tekniken användes för att observera de högt bestrålade områdena, som undersöktes ytterligare med Atomic force microscopy (AFM). Genom nano-indientation upptäcktes bestrålningshärdning för båda proverna i de bestrålade områdena. Fräsning med en fokuserad jonstråle (FIB) användes för att avlägsna lameller från de spruckna områdena i både UN- och kompositprovet för att kunna analyseras med transmission electron microscopy (TEM). Det senare visade att det bildades dislokationer i de bestrålade områdena.

Doctor of Philosophy / Department of Physics / Hongxing Jiang / The optical and structural properties of Er-doped GaN/InGaN materials and devices synthesized by metal organic chemical vapor deposition (MOCVD) were investigated. Er-doped GaN via MOCVD emits a strong photoluminescence (PL) emission at 1.54 um using both above and below-bandgap excitation. In contrast to other growth methods, MOCVD-grown Er-doped GaN epilayers exhibit virtually no visible emission lines. A small thermal quenching effect, with only a 20% decrease in the integrated intensity of the 1.54 um PL emission, occurred between 10 and 300 K. The dominant bandedge emission of Er-doped GaN at 3.23 eV was observed at room temperature, which is red-shifted by 0.19 eV from the bandedge emission of undoped GaN. An activation energy of 191 meV was obtained from the thermal quenching of the integrated intensity of the 1.54 um emission line. It was observed that surface morphology and 1.54 um PL emission intensity was strongly dependent upon the Er/NH3 flow rate ratio and the growth temperature. XRD measurements showed that the crystalline ordering of the (002) plane was relatively unperturbed for the changing growth environment. Least-squares fitting of 1.54 um PL measurements from Er-doped GaN of different growth temperatures was utilized to determine a formation energy of 1.82 ± 0.1 eV for the Er-emitting centers. The crystalline quality and surface morphology of Er-doped InGaN (5% In fraction) was nearly identical to that of Er-doped GaN, yet the PL intensity of the 1.54 um emission from Er-doped InGaN (5% In fraction) was 16 x smaller than that of Er-doped GaN. The drop in PL intensity is attributed to the much lower growth temperature in conjunction with the high formation energy of the Er- emitting centers. Er-doped InGaN grown at fixed growth temperature with different growth pressures, NH3 flow rates, and Ga flow rates was also investigated, and showed that increased In fractions also resulted in a smaller 1.54 um PL intensity. Er-doped InGaN p-i-n diodes were synthesized and tested. The electroluminescence (EL) spectra under forward bias shows strong Er based emission in the infrared and visible region. The different emission lines from EL spectra in contrast to PL spectra implies different excitation methods for the Er based emission in the p-i-n diode than in the PL excited epilayer.

This thesis aims to measure the mechanical properties of ceramics on the microscale using microcantilever beams. Focussed Ion Beam milled triangular cross-sectional beams (approximately 3 x 5 x 20µm) were fractured using a nanoindenter to measure the Young’s modulus, fracture strength, and fracture toughness. By developing the technique with a sapphire bicrystal, it was found that the mechanical properties could be successfully ascertained if correction factors were used. Experiments and theoretical work showed that sapphire and polycrystalline alumina beams undergo moisture assisted sub-critical crack growth when tested in air. Whilst corrections for the Young’s modulus have been previously reported, this is the first reported attempt to correct for the notch tip residual stress and the first to consider sub-critical crack growth. Once these factors were characterised using the sapphire bicrystal, the technique was applied to a range of different ceramics, such as polycrystalline α-alumina and silicon nitride. These are the first reported direct measurements the grain boundary toughness of these ceramics using microcantilever beams. The grain boundary toughness was correlated with the macroscopic fracture properties and the characteristics of the ceramic (grain boundary composition, impurities, and fracture mode). Two grades of α-alumina were used and the macro- and micro-scale properties extensively compared. The damage evolution during uniaxial compression of alumina was investigated in depth, and compared to a previous reported microcrack evolution model using the measured grain boundary toughness. Investigation of whether deformation twins formed during loading was undertaken and the phenomenon was shown to not occur.

The work in this thesis relates to the preparation and structural and electrical characterisation of calcium and strontium hydrides, imides and nitride hydrides. Conventional solid state methods in controlled atmospheres were used to synthesise these materials. High temperature neutron diffraction, thermal analysis and conductivity studies performed on calcium and strontium hydride suggest an order – disorder transition in these materials at 350 – 450°C. Disordering is believed to involve rapid exchange of hydride ions across two crystallographic sites. This manifests itself in a lowering of the activation energy for bulk hydride ion conduction. The hydride ion conduction is good in these undoped materials: σ[total]subscript = 0.01 S/cm for CaH₂ at 1000K; for SrH₂, σ[total]subscript = 0.01 S/cm at 830K. Doping of SrH₂ with NaH causes a significant increase in the low temperature conductivity, due to presence of extrinsic defects. The high temperature conductivity is negatively affected by NaH doping. Calcium nitride hydride (Ca₂NH) was obtained as a single phase material by reacting either calcium metal or calcium hydride (CaH₂) in an argon atmosphere containing 5 – 7% H₂ and 1 – 7% N₂. Imide ions substituting for hydride and nitride ions constitute a major chemical defect in this material. Long range ordering of the nitride and hydride ions occurs, giving rise to a double cubic crystal symmetry. This order breaks down at 600 – 650°C. Applying the same reaction conditions to strontium metal results in a mixed phase of strontium nitride hydride and imide. No long range order in the nitride hydride phase could be observed. Doping Ca₂NH with lithium hydride (LiH) causes the appearance of a second calcium imide phase, whereas doping with sodium hydride (NaH) increases the amount of imide ions as a defect in the nitride hydride structure, thereby decreasing the long range ordering of nitride and hydride ions.

This Thesis concerns the development of fullerene-like (FL) carbon nitride (CNx) thin films and the discovery of phosphorus-carbide (CPx) compounds. The work dedicated to CPx include first-principles theoretical simulations of the growth and properties of FL-CPx structures. I have employed DC magnetron sputtering methods to synthesize both CNx and CPx thin films. The deposition conditions for CPx films were chosen on the basis of the theoretical results as well as from the experience from the deposition of FL-CNx thin films. The characterization of the CPx films is divided into three main directions: structural characterization by transmission electron microscopyand scanning electron microscopy, analysis of the amount of elements and chemical bonds presentin the structure by X-ray photoelectron spectroscopy and Auger spectroscopy, and mechanicalproperty analysis by nanoindentation. The CPx films exhibit a short range orderedstructure with FL characteristics for substrate temperature of 300 °C and for a phosphorus content of 10-15 at.%, which isconsistent with the theoretical findings. These films also displayed the best mechanical properties in terms of hardness and resiliency, which are better than those of the corresponding FL-CNx films. For the FL-CNx thin film material, I find that the surface water adsorption is lower compared to commercial computer hard disk top coatings. Following that line the dangling bonds in FL-CNx coatings have been investigated  by electron spin resonance (ESR). The absence of ESR signal for FL-CNx indicates very low density of dangling bonds in the material, which explains the low water adsorption tendency. The potential for using highly elastic FL-CNx coatings in an automotive valve-train environment has also been investigated. CNx coatings of different nitrogen content were investigated using microscopy, wear testing, nanoindentation testing, and in an experimental cam-tappet testing rig. The FL-CNx coating with the higher value of hardness/elastic modulus showed greater durability in cam-tappet wear testing.

Un nouvel essai mécanique a été développé pour répondre à la demande d'analyse des propriétés mécaniques des revêtements et films d'épaisseur nanométrique par essai de gonflement. La méthode utilisée est l'application d'une différence de pression sur une membrane non supportée, usinée en utilisant les techniques standards de gravure microélectronique. Le banc d'essai permettra d'effectuer des essais à haute température (au dessus de 900°C). La principale difficulté rencontrée a été la mise au point d'une méthode de mesure de la déflection de la membrane qui perturbe celle ci aussi peu que possible. Deux techniques ont été utilisées : capteur ponctuel et capteur interférométrique 2D avec référence sphérique. La première technique, plus simple, s'est révélée difficilement praticable, en particulier dans le cas de flambage de la membrane. La mise en place de la deuxième a nécessité une description fine du comportement du système optique (distorsion des images, calcul des interférogrammes) aboutissant à une méthode de mesure simple, susceptible d'être intégrée en ligne au système de contrôle de l'interféromètre, et complétée par un traitement complet des données après essai.Afin de valider l'essai, deux types de revêtements ont été caractérisés. Tout d'abord des films fragiles de nitrure de silicium et de silicium pour mettre en évidence la fiabilité et la reproductibilité des essais. Puis des films minces d'or pour observer l'influence de la microstructure sur le début de la déformation plastique / A new mechanical testing device of free standing membranes by Bulge Test has been built at Institute Jean Lamour in order to investigate the mechanical properties of thin films of nanometric thickness. The Bulge Test measures the deflection of a free standing membrane to which a differential atmospheric pressure has been applied. (The specimens are prepared from film on substrate deposits by cutting a window within the substrate by standard microelectronic techniques.) We aim of achieve tests from room temperature to ~ 900°C. The main technical difficulty met during this work was to develop a non perturbating method of measurement of the film bulge. Two different techniques were tested: point measurement and 2D interferometry using a spherical reference. The first technique, however simple, was difficult to practice, especially in the case of buckling membranes. The second method required a detailed analysis of the whole optical system (image distorsion, calculation of interferograms) leading to a simple measurement method, suitable for integration in the acquisition and command chain of the device, followed by an off line full treatment.The operating method was used on two different sets of specimens: fragile silicon nitride and silicon membranes in order to test the reproducibility of the device. Polycrystalline gold thin films were then used to study the early stage of plastic strain

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power. / <p>QC 20160922</p>

Experimental investigations of the optical properties of GaN nanostructured light emitting diode (LED) arrays are presented. Microphotoluminescence spectroscopy with pulsed and continuous wave lasers was used to probe the carrier dynamics and emission mechanisms of nanorod LED arrays fabricated by a top down etching method. Results show a possible reduction in internal electric field as nanorod diameter decreases. Localisation effects were also observed, affecting the spectral shape of the nanorod emission. Under two-photon excitation, quantum dot-like sharp spectral peaks in the PL spectra are found to exist in abundance amongst all the nanorod samples. The optical properties of these localised states, which are shown to be associated with the nanorod free-surfaces, are characterised using non-linear and time resolved spectroscopy. An investigation into spatially resolved single nanorods was also carried out. Single nanorods were isolated, and characterised using pulsed lasers. The etching is shown to increase the carrier decay life-time at extended intervals over several hundred ns. The temporal evolution and excitation power density dependence of the quantum dot-like states are also presented for the first time. The long lived localised states are thought to arise from surface effects, in particular Fermi-surface pinning, causing localisation and spatial separation of carriers. Additional work on nano-pyramid array LEDs, with quantum wells on semi-polar surfaces is also presented. Optical properties using micro-photoluminescence are compared to cathodoluminescence studies. An uneven distribution of emission wavelengths across the pyramid facet is thought to lead to an emission mechanism involving carriers transferring between multiple spatially localised states. Finally, experimental techniques and fabrication methods for future work are documented in detail.

Une étape cruciale dans la fabrication des MEMS de haute fréquence est la gravure par plasma de la couche mince d’AlN de structure colonnaire agissant comme matériau piézoélectrique. Réalisé en collaboration étroite avec les chercheurs de Teledyne Dalsa, ce mémoire de maîtrise vise à mieux comprendre les mécanismes physico-chimiques gouvernant la cinétique ainsi que la formation de dommages lors de la gravure de l’AlN dans des plasmas Ar/Cl2/BCl3. Dans un premier temps, nous avons effectué une étude de l’influence des conditions opératoires d’un plasma à couplage inductif sur la densité des principales espèces actives de la gravure, à savoir, les ions positifs et les atomes de Cl. Ces mesures ont ensuite été corrélées aux caractéristiques de gravure, en particulier la vitesse de gravure, la rugosité de surface et les propriétés chimiques de la couche mince. Dans les plasmas Ar/Cl2, nos travaux ont notamment mis en évidence l’effet inhibiteur de l’AlO, un composé formé au cours de la croissance de l’AlN par pulvérisation magnétron réactive et non issu des interactions plasmas-parois ou encore de l’incorporation d’humidité dans la structure colonnaire de l’AlN. En présence de faibles traces de BCl3 dans le plasma Ar/Cl2, nous avons observé une amélioration significative du rendement de gravure de l’AlN dû à la formation de composés volatils BOCl. Par ailleurs, selon nos travaux, il y aurait deux niveaux de rugosité post-gravure : une plus faible rugosité produite par la présence d’AlO dans les plasmas Ar/Cl2 et indépendante de la vitesse de gravure ainsi qu’une plus importante rugosité due à la désorption préférentielle de l’Al dans les plasmas Ar/Cl2/BCl3 et augmentant linéairement avec la vitesse de gravure. / A crucial step in the fabrication of high-frequency MEMS is the etching of the columnar AlN thin film acting as the piezoelectric material. Realized in close collaboration with researchers from Teledyne Dalsa, the objective of this master thesis is to better understand the physico-chemical mechanisms driving the etching kinetics and damage formation dynamics during etching of AlN in Ar/Cl2/BCl3 plasmas. In the first set of experiments, we have studied the influence of the operating parameters of an inductively coupled plasma on the number density of the main etching species in such plasmas, namely positive ions and Cl atoms. These measurements were then correlated with the etching characteristics, in particular the etching rate, the surface roughness, and the chemical properties of the AlN layer after etching. In Ar/Cl2 plasmas, our work has highlighted the inhibition effect of AlO, a compound formed during the AlN growth by reactive magnetron sputtering and not from plasma-wall interactions or from the incorporation of moisture in the columnar nanostructure of AlN. In presence of small amounts of BCl3 in the Ar/Cl2 plasma, we have observed a significant increase of the etching yield of AlN due to the formation of volatile BOCl compounds. Furthermore, our work has demonstrated that there are two levels of roughness following etching: a lower roughness produced by the presence of AlO in Ar/Cl2 plasmas which is independent of the etching rate and a larger roughness due to preferential desorption of Al in Ar/Cl2/BCl3 plasmas which increases linearly with the etching rate.