Global ETD Search

881	Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs Tine, Cheikh Abdoulahi, Tine January 2017 (has links) No description available. Electrical Engineering Engineering Reliability gate stress package parasitic inductance device modeling GaN degradation Gallium Nitride step stress analysis
882	Methylol-Functional Benzoxazines: Novel Precursors for Phenolic Thermoset Polymers and Nanocomposite Applications Baqar, Mohamed Saad 23 August 2013 (has links) No description available. Chemical Engineering Methylol functional benzoxazine Polybenzoxazine Polyurethane Polymerization kinetics Thermal conductivity Boron nitride Nanosheet Thermal stability Thermal conductivity models
883	Microstructure Evaluation of Iron Nitride Interstitial Compound, as a Candidate for Permanent Magnetic Material Moradifar, Parivash 31 May 2016 (has links) No description available. Materials Science iron nitride permanent magnet alpha double prime Fe16N2 nitrogen austenite nitrogen martensite partial transformation TEM VSM XRD
884	Modification of Inert Gas Condensation Technique to Achieve Wide Area Distribution of Nanoparticles and Synthesis and Characterization of Nanoparticles for Semiconductor Applications Pandya, Sneha G. 22 July 2016 (has links) No description available. Physics Vapor Phase Nanoparticle Synthesis Inert Gas Condensation Aluminum Nitride Erbium Nanoparticles Nanothermometers Indium Antimonide Nanoparticles Infrared Detectors
885	Ferromagnetic Thin and Ultra-Thin Film Alloys of Manganese and Iron with Gallium and Their Structural, Electronic, and Magnetic Properties Mandru, Andrada Oana 19 July 2016 (has links) No description available. Physics Condensed Matter Physics ferromagnets antiferromagnets manganese gallium molecular beam epitaxy manganese nitride iron gallium scanning tunneling microscopy
886	APPLICATIONS OF GALLIUM NITRIDE FETS TO RF ARRAYS FOR MAGNETIC RESONANCE IMAGING Twieg, Michael D. 31 May 2016 (has links) No description available. Electrical Engineering Biomedical Engineering Medical Imaging MRI pTX GaN Gallium Nitride FETs CMCD RFPA RF switch detuning parallel transmit
887	III-V Tunneling Based Quantum Devices for High Frequency Applications Growden, Tyler A. 29 December 2016 (has links) No description available. Electrical Engineering III-Nitride resonant tunneling diode light emitting diode semiconductor device physics device processing switching speed GaN RTD oscillator
888	Thermoelectric Transport and Energy Conversion Using Novel 2D Materials Wirth, Luke J. January 2016 (has links) No description available. Nanotechnology Energy Engineering Materials Science Solid State Physics Graphene Boron Nitride Silicene Nanoribbons Thermal Transport Thermoelectric Figure of Merit Quantum Transport
889	Cathodoluminescence spectroscopy studies of aluminum gallium nitride and silicon device structures as a function of irradiation and processing White, Brad D. 15 March 2006 (has links) No description available. Gallium Nitride GaN AlGaN HEMT Schottky Barrier Proton Irradiation Device Processing ICP-RIE Fermi Level Pinning Defects Cathodoluminescence
890	LUMINESCENT SiCxNy THIN FILMS DEPOSITED BY ICP-CVD Dunn, Kayne 10 1900 (has links) <p>Please email me at kdunn@celccocontrols.com to confirm receipt of my thesis.</p> <p>Thanks,</p> <p>Kayne</p> / <p>In current microelectronic interconnect technology, significant delay is incurred due to capacitances in the intermediate and global interconnect layers. To avoid capacitive effects optical interconnects can be used; however conventional technologies are expensive to manufacture. One method to address these issues is to make use of quantum confinement effects and states lying within the bandgap of the material to enhance luminescence in a CMOS compatible silicon based system. Thin SiCxNy films appear to be suitable to work as luminescent silicon based films due to their lower direct bandgap and chemical stability but have not yet been studied in great detail.</p> <p>This thesis is an exploratory work aiming to assess the suitability of SiCxNy films for the above applications and to identify future research areas. The films analyzed in this thesis were manufactured on the inductively coupled plasma-chemical vapour deposition reactor (ICP-CVD) at McMaster University. The ICP-CVD produces films of high uniformity by using a remote RF plasma and an arrangement of high vacuum pumps to attain a vacuum on the order of 10-7Torr.</p> <p>Several experimental techniques have been used to analyse the films. The complex index of refraction has been determined through the use of ellipsometry giving results typical of that of a-SiNx:H. The photoluminescence spectroscopy results show a large broad emission peak with at least one shoulder at higher energies. The precise luminescence mechanism(s) could not be identified though a strong relationship with the bonding state of nitrogen has been found. The composition and structure of the films, as determined through ion beam measurements, infrared absorption measurements, and transmission electron microscopy measurements demonstrate the formation of a two phase structure consisting of carbon rich clusters surrounded by a mostly silicon nitride matrix. These carbon rich regions have some graphitic character and act to dampen the luminescence.</p> / Master of Applied Science (MASc) Silicon carbon nitride luminescent silicon two phase structure SiCxNy nanocrystals photoluminescence Semiconductor and Optical Materials Semiconductor and Optical Materials

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