Diploma thesis on Machining hardened steels is focused on the analysis of longitudinal turning of hardened steel 14 109 by using a tool from PKNB in terms of measuring the force load using a dynamometer and then evaluating the surface quality. The theoretical part deals with the issue of turning technology, cutting materials and heat treatment of steel. In the practical part, the influence of cutting conditions on the resulting values was assessed during the experiment. Twelve samples with different combinations of cutting conditions were tested, then was selected a sample that met the criterion of combining minimum cutting forces values and surface quality. The experiment shows that force load values can be achieved twice less by combining cutting conditions with an appropriate combination.

Strength and strain analysis of high pressure compound vessel, which is used to produce superhard materials (for example synthetic diamond). This work was elaborated to compare the stresses and strains calculated by Prof. Jan Vrbka making use of the FEM program ‘Prokop’17 years ago with those gained with the contemporary FEM Ansys program. The vessel is loaded by internal pressure of size 6 GPa. The elastic-plastic material be-haviour is taken into account. Real value of friction between rings and non-uniform temperature field is included into the calculation. The process of assembling the compound vessel is simulated step by step.

The diploma work is focused on the ceramic tool materials and its effective use. The introductory part of the work contains the detail characteristic of the ceramic tool materials from the point of view of their dividing, physic-mechanical propertis, production methods and marking. The main part of the work is focused to judging of the ceramic portion at the production assortment of the top World producers of tool materials and to evaluation of cutting ability of the particular materials of these producers. The detail analysis of recommended cutting conditions, which is aimed to an effective use of the ceramic materials, had been worked up for this purpose. The technical economic analysis confirms, that the present effective aplications of ceramic are limited only for specific cases of machining cast irons, steels and alloys.

Diploma thesis is focused on the superhard cutting materials (polycrystalline diamond, polycrystalline boron nitride) and presents their physico-mechanical properties, production, efficient use, new trends. It assesses the range of cutting tool materials and individual front world producers in terms of optimum cutting conditions for turning operations and type of material to be machined. Further, these cutting materials are compared between different manufacturers to bring out thein differences in cutting conditions.

Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). To calculate the LEE for different pyramid designs, simulations can be performed using the FDTD method. Maximizing the LEE is treated as a black-box optimization problem with an interpolation method that utilizes radial basis functions. A simple heuristic is implemented and tested for various pyramid parameters. The LEE is shown to be highly dependent on the pyramid size, the source position and the polarization. Under certain circumstances, a LEE over 17% is found above the pyramid. The results are however in some situations very sensitive to the simulation parameters, leading to results not converging properly. Establishing convergence for all simulation evaluations must be done with further care. The results imply a high LEE for the pyramids is possible, which motivates the need for further research.

Le domaine du spectre électromagnétique correspondant aux fréquences térahertz est encore peu exploité, pourtant, les applications nécessitant la génération, l’amplification ou la détection d’un signal térahertz sont nombreuses et intéressantes. Dans ce travail, nous nous intéressons tout particulièrement aux détecteurs plasmoniques, qui constituent une alternative prometteuse à la montée en fréquence des capteurs électroniques et l’utilisation de capteurs thermiques pour les photons de faible énergie. Les capteurs plasmoniques fonctionnent grâce au couplage entre le photon térahertz et un plasmon au sein d’un gaz d’électrons bidimensionnel (2DEG). Le plasmon-polariton est ensuite transformé en un signal continu et détectable. Nous utilisons pour cela le 2DEG présent dans l’hétérostructure AlGaN/GaN. Le couplage entre le photon et le plasmon est réalisé par un réseau métallique déposé sur la structure semi-conductrice. Tout d’abord, l’étude du couplage photon/plasmon-polariton par des simulations électromagnétiques nous a permis de connaître les fréquences de résonance des plasmons-polaritons en fonction des dimensions du réseau. Le motif de réseau composé de deux bandes de métal de largeurs différentes a été plus particulièrement étudié. Ce motif permettant aux détecteurs d’atteindre une très haute sensibilité [Coquillat et al., 2010] et n’avait pas encore été étudié du point de vue de son efficacité de couplage. Des détecteurs, dimensionnés pour notre montage de test à 0,65 THz, ont ensuite été fabriqués puis mesurés avec un réseau non-polarisé, à température ambiante et refroidis à l’azote. La correspondance entre la variation de la sensibilité en fonction de la fréquence et les spectres d’absorption mesurés au spectromètre infrarouge à transformée de Fourier (FTIR) montre l’importance de l’étape de couplage dans le processus de détection. Contrôler la densité électronique dans le 2DEG permet de modifier la fréquence de résonance des plasmons-polaritons et d’augmenter la sensibilité des détecteurs. Nous avons mené des développements technologiques de manière à pouvoir contrôler la densité électronique du 2DEG en appliquant une tension sur le réseau. Cette étape constitue un défi technologique compte tenu de la surface très étendue des réseaux (plusieurs mm²). Nous avons finalement fabriqué des détecteurs pour lesquels la fréquence de résonance de couplage peut être contrôlée grâce à la tension appliquée sur le réseau. / The THz-domain of the electromagnetic spectrum is not frequently used, even if the generation, amplification and detection of THz-waves would open a wide range of interesting applications. In this work, we focus on plasmonic detectors as a promising alternative to the frequency-raising of high-frequency electronic detectors and to the use of thermic detectors for low-energy photons. The coupling between a THz-photon and a plasmon in a 2D electron gas (2DEG) gives birth to a plasmon-polariton, which is then turned into a continuous, measurable signal and explains the operation of the plasmonic detector. In this work, we use the 2DEG in the semiconductive heterostructure AlGaN/GaN. A metallic grating deposited on-top of the semiconductor realises the coupling between photon and plasmon. First, we used electromagnetic simulations to study the coupling between photon and plasmon and calculate the resonant coupling frequency with respect to the grating dimensions. We studied specifically a grating pattern made of two metal stripes of different widths. This pattern gives the highest sensitivity to the detectors [Coquillat et al., 2010] and had not been studied before in term of coupling efficiency. In a second time, we fabricated detectors designed to match our 0.65 THz experimental setup. These detectors have been measured at 77 K and at room-temperature. No voltage has been applied on the grating. We saw that the sensitivity variations with respect to the incident frequency correspond to the absorption spectra measured by Fourier Transform spectrometer (FTIR), what show the importance of the coupling for the detection. Monitoring the electronic density in the 2DEG is a way to monitor the plasmon-polariton resonant frequency and the detector sensitivity. We led technological development to monitor the electronic density in the 2DEG by applying a voltage on the grating. This has been a technological challenge because of the wide grating area (a few mm²). Finally, we fabricated detectors for which it was possible to monitor the resonant absorption frequency using the grating voltage.

Le Ta₃N₅ fait partie des matériaux les plus prometteurs pour la photo-électrolyse de l’eau. En effet, la bande de valence et la bande de conduction sont situées autour du potentiel d’évolution de l’hydrogène et de l’oxygène et son petit gap (2.1eV) permet l’absorption d’une grande partie du spectre solaire. Par contre la synthèse de ce matériau est difficile à cause de la structure riche en azote (faible diffusion) et de l’état d’oxydation élevé du Ta (+5) dans le cristal de Ta₃N₅. Sa synthèse par pulvérisation cathodique est peu exploitée à ce jour, malgré que cette technique de dépôt permette d’augmenter le rapport ion-neutre arrivant sur le film en croissance et donc de fournir de l’énergie supplémentaire à la surface du film favorisant ainsi la cristallisation. Lors cette thèse, des couches minces de Ta₃N₅ ont été déposées par pulvérisation cathodique dans une atmosphère réactive. Il y est montré que la pulvérisation d’une cible de Ta produit des Ar rétrodiffusés avec des énergies élevées qui augmentent l’incorporation de défauts dans la couche lorsque la polarisation de la cible est élevée. Des films de Ta₃N₅ ont été déposés en mode continu ce qui a permis de maintenir une polarisation faible. Il a été mis en évidence que l’oxygène incorporé dans le cristal joue un rôle crucial pour la déposition du film de Ta₃N₅. De plus, l’oxygène influence fortement les propriétés des couches minces, notamment les propriétés optiques et électroniques. Un nouveau système, augmentant le flux d’ions vers le substrat, a été installé dans le réacteur de dépôt ce qui a augmenté le degré de cristallisation de la phase Ta₃N₅. Les connaissances acquises lors de cette thèse ont été utilisées pour préparer des photoanodes à partir de Ta₃N₅ et leur aptitude à décomposer l’eau sous l’illumination du soleil a été démontrée. / Ta₃N₅ is one of the most promising candidates for efficient water splitting using sunlight due to its band positions with respect to the oxygen and hydrogen evolution potentials and its small band gap of 2.1eV. Its synthesis, however, is challenging given its high content of nitrogen, with its low diffusivity, and the Ta metal atom in a high oxidation state. Few investigations into its synthesis by magnetron sputtering exist to date although this technique offers the possibility of tuning the ion-to-neutral flux ratio onto the growing film. This can change the supply of energy onto its surface and therefore promote the crystallization. In this thesis, reactive magnetron sputtering is investigated for the preparation of Ta₃N₅ thin films. It is shown that sputtering of a Ta target in an Ar atmosphere produces energetic backscattered Ar neutrals at high target potentials. To keep the potential low, Ta₃N₅ is deposited by sputtering in DC mode. The growth of the Ta₃N₅ phase requires the incorporation of oxygen into the lattice. It is shown that optical and electronic properties of these samples vary strongly with the precise amount of oxygen in the thin film. Samples with a high degree of crystallinity are obtained by increasing the N₂⁺ flux onto the substrate by changing the form of the magnetic field of the magnetron. The highly crystalline samples prepared by this method are proven to work as photoanodes for the splitting of water under illumination.

abstract: The availability of bulk gallium nitride (GaN) substrates has generated great interest in the development of vertical GaN-on-GaN power devices. The vertical devices made of GaN have not been able to reach their true potential due to material growth related issues. Power devices typically have patterned p-n, and p-i junctions in lateral, and vertical direction relative to the substrate. Identifying the variations from the intended layer design is crucial for failure analysis of the devices. A most commonly used dopant profiling technique, secondary ion mass spectroscopy (SIMS), does not have the spatial resolution to identify the dopant distribution in patterned devices. The possibility of quantitative dopant profiling at a sub-micron scale for GaN in a scanning electron microscope (SEM) is discussed. The total electron yield in an SEM is shown to be a function of dopant concentration which can potentially be used for quantitative dopant profiling. Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2019

During neural activity, action potentials travel down axons, generating effective charge current pulses, which are central in neuron-to-neuron communication. Consequently, said current pulses generate associated magnetic fields with amplitudes on the order of picotesla (pT) and femtotesla (fT) and durations of 10’s of ms. Magnetoencephalography (MEG) is a technique used to measure the cortical magnetic fields associated with neural activity. MEG limitations include the inability to detect signals from deeper regions of the brain, the need to house the equipment in special magnetically shielded rooms to cancel out environmental noise, and the use of superconducting magnets, requiring cryogenic temperatures, bringing opportunities for new magnetic sensors to overcome these limitations and to further advance neuroscience. An extraordinary magnetoresistance (EMR) tunable graphene magnetometer could potentially achieve this goal. Its advantages are linear response at room temperature (RT), sensitivity enhancement owing to combination of geometric and Hall effects, microscale size to place the sensor closer to the source or macroscale size for large source area, and noise and sensitivity tailoring. The magnetic sensitivity of EMR sensors is, among others, strongly dependent on the charge mobility of the sensing graphene layer. Mechanisms affecting the carrier mobility in graphene monolayers include interactions between the substrate and graphene, such as electron-phonon scattering, charge impurities, and surface roughness. The present work reviews and proposes a material set for increasing graphene mobility, thus providing a pathway towards pT and fT detection. The successful fabrication of large-size magnetic sensors employing CVD graphene is described, as well as the fabrication of trilayer magnetic sensors employing mechanical exfoliation of h-BN and graphene. The magneto-transport response of CVD graphene Hall bar and EMR magnetic sensors is compared to that obtained in equivalent trilayer devices. The sensor response characteristics are reported, and a determination is provided for key performance parameters such as current and voltage sensitivity and magnetic resolution. These parameters crucially depend on the material's intrinsic properties. The Hall cross magnetic sensor here reported has a magnetic sensitivity of ~ 600 nanotesla (nT). We find that the attained sensitivity of the devices here reported is limited by contaminants on the graphene surface, which negatively impact carrier mobility and carrier density, and by high contact resistance of ~2.7 kΩ µm at the metallic contacts. Reducing the contact resistance to < 150 Ω µm and eliminating surface contamination, as discussed in this work, paves the way towards pT and ultimately fT sensitivity using these novel magnetic sensors. Finite element modeling (FEM) is used to simulate the sensor response, which agrees with experimental data with an error of less than 3%. This enables the prediction and optimization of the magnetic sensor performance as a function of material parameters and fabrication changes. Predictive studies indicate that an EMR magnetic sensor could attain a sensitivity of 1.9 nT/√Hz employing graphene with carrier mobilities of 180,000 cm²/Vs, carrier densities of 1.3×10¹¹ cm^-2 and a device contact resistance of 150 Ω µm. This sensitivity increments to 443 pT/√Hz if the mobility is 245,000 cm²/Vs, carrier density is 1.6×10¹⁰ cm^-2, and a lower contact resistance of 30 Ω µm. Such devices could readily be deployed in wearable devices to detect biomagnetic signals originating from the human heart and skeletal muscles and for developing advanced human-machine interfaces.

Die Arbeit befaßt sich mit der Charakterisierung der elektronischen Struktur von neuen Halbleitermaterialien. Zu den untersuchten Materialsystemen, welche alle eine relativ kleine Gitterkonstante aufweisen, gehören der Diamant, Siliciumcarbid, amorphes Kohlenstoffnitrid (a-CNx) sowie verschiedene Proben der Serie AlxGa1-xN. Zur Charakterisierung der elektronischen Struktur werden Photoemissionsmessungen für die Bestimmung der besetzten Zustände und Methoden der Röntgenabsorption im Fall der unbesetzten Zustände herangezogen. Mit diesen Methoden wird die Struktur der Oberflächen von CVD-Diamantfilmen für unterschiedliche Oberflächenempfindlichkeiten bestimmt. Außerdem wird die Modifikation der elektronischen Bänder in Naturdiamant durch variierende Cäsiumbedeckungen der Oberfläche ermittelt. Für zwei Rekonstruktionen der 3C-SiC(001)-Oberfläche wird die Oberflächenbandstruktur bestimmt und es werden die Ergebnisse mit existierenden Strukturmodellen und Rechnungen verglichen. Zum Vergleich werden auf dieser Oberfläche weiterhin auch Messungen zur optischen Oberflächenanisotropie durchgeführt und Hinweise auf Beiträge von Oberflächenzuständen zu den Spektren gefunden. In den amorphen Kohlenstoffnitridfilmen können verschiedene Stickstoff- und Kohlenstoffkoordinationen nachgewiesen und deren Temperaturstabilität bestimmt werden. Aus den polarisationsabhängigen Röntgenabsorptionsmessungen an nitridiertem Galliumarsenid bzw. an den Proben der Serie AlxGa1-xN werden Rückschlüsse auf die Phasenzusammensetzung und die geometrische Struktur gezogen.