Besides colorless ONUs, we investigate potentially low cost, high speed vertical-cavity-surface-emitting lasers (VCSELs) for use in future access networks. VCSELs are attractive because they may meet the stringent size, power dissipation and cost constraints of access network components. We carry out experiments to demonstrate that up to 20 Gb/s direct modulation of long wavelength VCSEL is possible and evaluate their performance as high-speed transceivers. / In order to reduce the complexity and costs of ONU transceiver, we propose a scheme based on a nonreciprocal optical modulator and a linear loop mirror for receiving downstream and sending upstream data We show that the nonreciprocity of traveling wave electrodes can selectively impress signal modulation onto the reflected upstream signals only. Monolithic integrated transceivers may thus remodulate downstream signals for upstream data transmission without needing integrated optical circulators. The proposed ONU is thus compatible with monolithic integration. / In this thesis, we describe our research on photonic devices and subsystems for future access networks. Since optical network units (ONUs) are the most cost-sensitive parts, we first investigate the use of advanced modulation format in colorless ONU structure. We implement a scheme which uses dark return-to-zero (DRZ) for downstream transmission and remodulation of it using a differential-phase-shift-keying (DPSK) for upstream both at 10 Gb/s. We also experimentally demonstrate silicon microring based optical frequency discriminators for use in demodulating DPSK and differential-quadrature-phase-shift-keying (DQPSK) signals. We show that the scheme is robust to variations in bit-rates in contrast with conventional Mach-Zehnder delay interferometer scheme. / Internet traffic has undergone tremendous growth in the past decades and has already penetrated into the daily lives of the general population. Demand for new high bandwidth services is beginning to drive the deployment of optical fiber-based access networks to solve the so-called last mile bottleneck around the world. Passive optical networks (PON) are attractive because there are no active components in the transmission line, thus reducing operational and deployment costs. Time-division-multiplexing (TDM) used in currently deployed PON, in which the bandwidth is shared among the users by time domain multiplexing, does not fully utilize the bandwidth potential of optical fibers and will not be able to satisfy the bandwidth demand in access networks in the near future. Among the advanced multiplexing techniques, wavelength-division-multiplexing (WDM) PON is a good candidate technology for providing sustained bit-rates beyond 10 Gb/s in access networks. However, reduction of costs in WDM PON remains a key challenge for their practical deployment. / Wired and wireless hybrid optical access networks are also investigated. Radio-over-fiber is one low-cost approach to deliver broadband wireless services, in which radio signals at the carrier frequency are delivered over optical networks from a central office to remote antenna base stations. Generation of high frequency carrier and radio frequency fading are the main research challenges. We propose and demonstrate frequency upconversion based on frequency doubling and quadrupling. Novel wired and wireless hybrid subsystems that mitigate millimeter-wave signal distortion are also demonstrated. / Xu, Lin. / Adviser: H. K. Tsang. / Source: Dissertation Abstracts International, Volume: 72-04, Section: B, page: . / Thesis (Ph.D.)--Chinese University of Hong Kong, 2010. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. Ann Arbor, MI : ProQuest Information and Learning Company, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstract also in Chinese.

Lee Ka-lun. / "September 2003." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2003. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Lo, Ming Gai Stanley. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 131-135). / Abstracts in English and Chinese. / Title Page --- p.i / Abstract --- p.ii / Acknowledgements --- p.v / Table of Contents --- p.vii / List of Figures --- p.ix / List of Tabic --- p.xiv / Chapter Chapter 1: --- Introduction --- p.1 / Chapter 1.1 --- Photonic Integrated Circuits --- p.1 / Chapter 1.2 --- Silicon Photonics --- p.7 / Chapter 1.3 --- Optical Modulators --- p.15 / Chapter 1.4 --- Modulation Mechanisms in Silicon --- p.19 / Chapter 1.5 --- Motivation --- p.27 / Chapter 1.6 --- Thesis Outline --- p.28 / Chapter Chapter 2: --- Use of Silicon-bascd Modulators in Radio-over-fiber Optical Links --- p.29 / Chapter 2.1 --- Modeling of Linearity of Silicon Carrier Depletion-based Modulators --- p.31 / Chapter 2.2 --- Modeling of Dependence of Linearity on Various Diode Structures --- p.45 / Chapter 2.3 --- Experiment of Radio-over-Fiber Signal Transmission by a Carrier-Injection Silicon Microring Modulator --- p.52 / Chapter 2.3.1 --- Device Fabrication --- p.53 / Chapter 2.3.2 --- Experimental Setups --- p.59 / Chapter 2.3.3 --- Experimental Results --- p.61 / Chapter 2.4 --- Summary --- p.66 / Chapter Chapter 3: --- Novel Diode Structures and T-Rail Travelling-Wave Electrodes to Enhance the Performance of Depletion-based Modulators --- p.67 / Chapter 3.1 --- Requirements of Diode Design for Depletion-based Optical Modulators --- p.70 / Chapter 3.2 --- Diode Design Principle --- p.72 / Chapter 3.3 --- Modeling Results of Vertical-Junction p-n Diodes --- p.79 / Chapter 3.4 --- Fabrication Process of the Silicon Modulator --- p.88 / Chapter 3.5 --- Experimental Results of the Fabricated Devices --- p.92 / Chapter 3.6 --- T-Rail Travelling-Wave Electrodes --- p.102 / Chapter 3.6.1 --- The Limiting Factors to the Speed of Depletion-based Modulators --- p.102 / Chapter 3.6.2 --- The Design Principle of T-Rail Travelling-Wave Electrodes --- p.104 / Chapter 3.6.3 --- The Fabricated Devices --- p.111 / Chapter 3.7 --- Summary --- p.112 / Chapter Chapter 4: --- Conclusion and Future Work --- p.113 / Chapter 4.1 --- Conclusion --- p.113 / Chapter 4.1.1 --- Use of Silicon-based Modulators in Radio-over-fiber Optical Links --- p.113 / Chapter 4.1.2 --- Novel Diode Structures and T-Rail Travelling-Wave Electrodes to Enhance the Performance of Depletion-based Modulators --- p.114 / Chapter 4.2 --- Future Work --- p.116 / Chapter Appcndix-A --- List of Symbols --- p.118 / Chapter Appcndix-B --- List of Abbreviations --- p.120 / Chapter Appcndix-C --- Principles of Various Optical Structures of Modulators --- p.123 / Chapter Appcndix-D --- Modeling of Refractive Index Change by Free-Carrier Plasma Dispersion Effcct --- p.127 / Reference --- p.131 / Publication List --- p.136

Les TCOs (Transparent Conductive Oxide) trouvent des applications dans de nombreux domaines s'étendant del'électrochromie au photovoltaique en passant par l'opto-électronique. Parmi les matériaux historiques, les TCOs detype n font l'objet d'une littérature abondante tandis que les TCO de type p sont quant à eux étudiés de façon plusconfidentielle mais commencent à susciter un engouement, notamment dans l'objectif de jonctions p-ntransparentes.Sur la base de la théorie de la méthode de modulation chimique de bande de valence, le composé CuCrO2 destructure délafossite est considéré comme un candidat intéressant de TCO de type p. L'objectif de ces travaux estd'élaborer des films minces à base de CuCrO2 avec une transmittance optique acceptable et une conductivitéélectrique de type p élevée afin de envisager la possibilité de fabrication des jonctions p-n transparents pourdiverses applications.Dans ce travail, les films CuCrO2 ont été déposés par co pulvérisation cathodique magnétron en condition réactiveà partir de cibles métalliques. Une substitution partielle de Cr par Mg a ensuite été effectuée et l'influence del'épaisseur du film CuCrO2 :Mg sur ses propriétés optoélectroniques a été étudiée. Enfin, des revêtementsd'architecture sandwich CuCrO2 :Mg/Ag/CuCrO2 :Mg ont été élaborés en faisant varier le temps de dépôt de lacouche intermédiaire d'argent afin d'améliorer les performances optoélectroniques des films. / Transparent conductive oxides (TCOs) can be widely used in various domains from electrochromics to photovoltaicsowing to their unique optoelectronic properties. During the history of the development of TCOs, most attention hasbeen focused on n-type TCOs, while p-type TCOs have made slow progress. Recently, the studies on p-type TCOsraised many interest especially due to their potential application in the fabrication of transparent p-n junctions.Based on the theory of chemical method of valance band, CuCrO2 compound with delafossite structure isconsidered as an interesting candidate for p-type TCOs. The objective of this work is to synthesize CuCrO2-basedthin films with acceptable optical transmittance and high p-type electrical conductivity in order to explore thepossibility of fabrication of transparent p-n junctions for various applications.In this work, CuCrO2 films were deposited by reactive sputtering from metallic targets. Then, partial Cr substitutionby Mg was performed into CuCrO2 films and the influence of the films thickness on its optoelectronic properties wasstudied. Finally, sandwich architectural coatings of CuCrO2 :Mg/Ag/CuCrO2 :Mg were designed in order to improvethe films optoelectronic performances.

Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN layers, each 200 nm thick with the In content increased in each layer, and with an intermediate thin GaN layer, 10 nm thick inserted between the InGaN layers, as compared to the conventional two-step growth of GaN epilayer on sapphire. The function of the intermediate layer is to progressively relax the strain and to annihilate the dislocations that build up in the InGaN layer. If the InGaN layers were graded too rapidly, more dislocations will be generated. This increases the probability of the dislocations getting entangled and thereby impeding the motion of the dislocations to relax the strain in the InGaN layer. The optimum growth conditions of the intermediate layer play a major role in promoting the suppression and filling of the V-pits in the GaN cap layer, and were empirically found to be a thin 10 nm GaN grown at 750 0°C and annealed at 1000 0°C. / Singapore-MIT Alliance (SMA)

This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the APB (aligned pillar bonding) and MASA (magnetically assisted statistical assembly) technologies. Next, ongoing research on applications of RM3 integration to produce optoelectronic integrated circuits (OEICs) for optical clock distribution, diffuse optical tomography, and smart pixel arrays are described. Finally, potential new applications of these technologies in intra- and interchip optical signal interconnects, in fluorescent dye detection and imaging for biomedical applications, and in III-V mini-IC integration on Si-CMOS for enhancing off-chip drive capabilities are outlined. / Singapore-MIT Alliance (SMA)

This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the applicability of RM³ integration to in-plane geometries for on-chip optical clock and signal distribution and on the suitability of commercially processed IC wafers for use as substrates for rectangular dielectric waveguides. / Singapore-MIT Alliance (SMA)

The synthesis and optoelectronic properties of biphenyl based conjugated copolymers with varying acceptor units in the polymer backbone were investigated. The well known Donor-Acceptor Theory was used to establish the synthetic pathway for the structural modifications. Solubility issues regarding biphenyl polymer was solved by copolymerizing with soluble units. For this purpose / poly 4-(biphenyl-4-yl)- 4&rsquo / -tert butylspiro[benzo[d]imidazole-2,1&rsquo / -cyclohexane] (P1), poly 4-(biphenyl-4-yl)- 2- dodecyl-2H-benzo[d][1,2,3]triazole (P2) and poly(4-(5-(biphenyl-4-yl)-4-hexylthiophen- 2-yl)-2-dodecyl-7-(4-hexylthiophen-2-yl)-2H-benzo[d][1,2,3]triazole (P3) were synthetized using Suzuki coupling process. Electrochemical properties of these polymers were examined by cyclic voltammetry, spectroelectrochemistry and kinetic studies. Polymers P2 and P3 showed both p- and n-doping behaviors and multicolored electrochromic states. Optical studies revealed that emission color of biphenyl is tuned from blue to orange and the polymers are good candidates for light emitting diode applications. OLED application of P3 was established and outputs of the device were increased by energy transfer studies. The preliminary investigation indicated that P3 possesses promising efficiencies.

Herein, we report the first solution-processed broadband photodetectors to break the past compromise between sensitivity and speed of response. Specifically, we report photodiodes having normalized detectivity (D*) > 1012 Jones and a 3dB bandwidth of > 2.9 MHz. This finding represents a 170,000 fold improvement in response speed over the most sensitive colloidal quantum dot (CQD) photodetector reported1 and a 100,000 fold improvement in sensitivity over the fastest CQD photodetector reported2. At the outset of this study, sensitive, solution-processed IR photodetectors were severely limited by low response speeds1. Much faster response speeds had been demonstrated by solution-processed photodetectors operating in the visible3, but these devices offered no benefits for extending the spectral sensitivity of silicon. No available solution-processed photodetector combined high sensitivity, high operating speed, and response to illumination across the UV, visible and IR. We developed a fast, sensitive, solution-processed photodetector based on a photodiode formed by a Schottky barrier to a CQD film. Previous attempts to form sensitive photodetectors based on CQD photodiodes had demonstrated low quantum efficiencies that limited sensitivity4,5. Efficient, sensitive semiconductor photodiodes are based on two fundamental characteristics: a large built-in potential that separates photogenerated charge carriers and minimizes internal noise generation, and high semiconductor conductivity for efficient collection of photogenerated charge. Schottky barriers to CQD films were developed to provide high, uniform built-in potentials. A multi-step CQD ligand exchange procedure was developed to allow deposition of tightly packed films of CQDs with high mobility and sufficiently well-passivated surfaces to form high-quality metallurgical junctions. The temporal response of the CQD photodiodes showed separate drift and diffusion components. Combined with detailed measurements of the Schottky barrier, these characteristics provided the physical basis for a numerical model of device operation. Based on this understanding, devices that excluded the slow diffusive component were fabricated, exploiting only the sub-microsecond field-driven transient to achieve MHz response bandwidth. These devices are the first to combine megahertz-bandwidth, high sensitivity, and spectral-tunability in photodetectors based on semiconducting CQDs. Record performance is achieved through advances in materials and device architecture based on a detailed understanding the physical mechanisms underlying the operation of CQD photodiodes.

Herein, we report the first solution-processed broadband photodetectors to break the past compromise between sensitivity and speed of response. Specifically, we report photodiodes having normalized detectivity (D*) > 1012 Jones and a 3dB bandwidth of > 2.9 MHz. This finding represents a 170,000 fold improvement in response speed over the most sensitive colloidal quantum dot (CQD) photodetector reported1 and a 100,000 fold improvement in sensitivity over the fastest CQD photodetector reported2. At the outset of this study, sensitive, solution-processed IR photodetectors were severely limited by low response speeds1. Much faster response speeds had been demonstrated by solution-processed photodetectors operating in the visible3, but these devices offered no benefits for extending the spectral sensitivity of silicon. No available solution-processed photodetector combined high sensitivity, high operating speed, and response to illumination across the UV, visible and IR. We developed a fast, sensitive, solution-processed photodetector based on a photodiode formed by a Schottky barrier to a CQD film. Previous attempts to form sensitive photodetectors based on CQD photodiodes had demonstrated low quantum efficiencies that limited sensitivity4,5. Efficient, sensitive semiconductor photodiodes are based on two fundamental characteristics: a large built-in potential that separates photogenerated charge carriers and minimizes internal noise generation, and high semiconductor conductivity for efficient collection of photogenerated charge. Schottky barriers to CQD films were developed to provide high, uniform built-in potentials. A multi-step CQD ligand exchange procedure was developed to allow deposition of tightly packed films of CQDs with high mobility and sufficiently well-passivated surfaces to form high-quality metallurgical junctions. The temporal response of the CQD photodiodes showed separate drift and diffusion components. Combined with detailed measurements of the Schottky barrier, these characteristics provided the physical basis for a numerical model of device operation. Based on this understanding, devices that excluded the slow diffusive component were fabricated, exploiting only the sub-microsecond field-driven transient to achieve MHz response bandwidth. These devices are the first to combine megahertz-bandwidth, high sensitivity, and spectral-tunability in photodetectors based on semiconducting CQDs. Record performance is achieved through advances in materials and device architecture based on a detailed understanding the physical mechanisms underlying the operation of CQD photodiodes.