O conhecimento da física de semicondutores foi usado para desenvolver e otimizar um sensor ótico de silício capaz de determinar com precisão a posição bidimensional de incidência de um feixe de luz em sua superfície. O sensor usa o efeito de fototensão lateral para gerar um sinal elétrico de saída que é função da posição de incidência da luz. Tecnologia planar do silício foi usada na fabricação do dispositivo, incluindo implantação iônica, difusão, fotolitografia, deposição de filmes metálicos e crescimento de dielétricos. A caracterização elétrica do sensor inclui medidas estáticas, com a distribuição de portadores em regime estacionário, medidas dinâmicas, onde é analisado o transiente do sinal elétrico e medidas espectroscópicas para analisar a resposta do sensor em função do comprimento de onda da luz incidente. Simulações dos processos de fabricação, parâmetros dos passos tecnológicos, distribuição dos portadores e do potencial elétrico bidimensional no sensor foram usadas para a otimização das características do sensor.

This master thesis is intended to investigate the profitability of transparent solar windows which concentrates parts of the invisible light to a solar cell.This makes it possible to generate electric energy while the window still is transparent. Other gains apply such as the removal of solar radiation into the building which makes it possible to decrease the amount of energy needed for cooling. The study will investigate profitability of transparent solar windows by simulating energy used for heating and cooling and by investigating profitability of the produced energy. The results show that it is not economically justified to use transparent solar windows for electricity generation with present techniques and with Swedish climate. It is however economically justified to use as a isolating window in buildings. The master thesis has been completed at Skanska in Stockholm.

O conhecimento da física de semicondutores foi usado para desenvolver e otimizar um sensor ótico de silício capaz de determinar com precisão a posição bidimensional de incidência de um feixe de luz em sua superfície. O sensor usa o efeito de fototensão lateral para gerar um sinal elétrico de saída que é função da posição de incidência da luz. Tecnologia planar do silício foi usada na fabricação do dispositivo, incluindo implantação iônica, difusão, fotolitografia, deposição de filmes metálicos e crescimento de dielétricos. A caracterização elétrica do sensor inclui medidas estáticas, com a distribuição de portadores em regime estacionário, medidas dinâmicas, onde é analisado o transiente do sinal elétrico e medidas espectroscópicas para analisar a resposta do sensor em função do comprimento de onda da luz incidente. Simulações dos processos de fabricação, parâmetros dos passos tecnológicos, distribuição dos portadores e do potencial elétrico bidimensional no sensor foram usadas para a otimização das características do sensor.

Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors.

No description available.

Ce travail de recherche porte sur l'élaboration de matériaux hybrides 3D nanotubes de TiO2/ polymère conducteur. Il est établi dans cette thèse que la nature du sel de fond de la solution de synthèse joue un rôle déterminant lors du dépôt de polymère par polarisation anodique au sein de ces nanotubes. En effet, les résultats montrent que la nature de l'électrolyte support a un impact sur la position du potentiel de bande plate du TiO2 et sur la présence ou non d'états de surface, qui tous les deux influencent la vitesse du transfert de charge. La nature de la jonction réalisée entre deux matériaux dépendant fortement de la position respective de leurs bandes énergétiques. Ainsi il est démontré que la synthèse de polypyrrole à la surface de nanotubes de TiO2 conduit à la formation d'une jonction ohmique, ce qui permet aux électrons issus de l'oxydation du polymère d'être transférés directement dans la bande de conduction du TiO2. Au contraire, la jonction formée par l'oxyde de titane et le PEDOT est de type p-n, ce qui laisse envisager que ce type de structure hybride peut trouver son application dans le domaine de l'énergie photovoltaïque. / This research work considers the realization of 3D hybrid materials TiO2 nanotubes/conducting polymer. In this thesis, it is proven that the background salt from the synthesis solution plays a decisive role during the polymer deposition through anodic polarization within TiO2 nanotube arrays. In fact, results show that the nature of the supporting electrolyte has an influence on the position of the flat band potential of the semiconductor, and on the presence of surface states, which both affect the rate of charge transfer. It is demonstrated that the nature of the junction obtained between the semiconductor and the polymer depends greatly on the respective position of their energy bands. Accordingly a TiO2 nanotubes/polypyrrole junction is shown to be of ohmic nature, allowing electrons from the polymer oxidation to be directly transferred to the conduction band of TiO2. On the contrary, the junction created between titanium dioxide and PEDOT is of p-n type, leading to potential applications in the field of photovoltaics.

The increasing demand of renewable energy is the big driving force for the research and development of more efficient solar energy conversion solutions. Solar cells, which use the photovoltaic effect to convert the photon energy to electrical current, are an important solar energy conversion technique. One solar cell technology is thin-film solar cells. Thin-film solar cells use an absorption layer with a direct band gap. A direct band gap has the advantage that the photons will penetrate less deep until a photoexcitation occur compared to semiconductors with an indirect band gap (e.g. silicon). For this reason the thin-film solar cells can be made very thin.CIGS is a common thin-film solar cell absorber material containing copper (Cu), indium (In), gallium (Ga) and selenium (Se). One objective of this work has been to determine element concentrations of CIGS absorption layers from sample measurements. The GGI ratio determines the band gap, which is an important factor for optimising the efficiency of the solar cell.1 The copper vacancy is the main acceptor dopant in CIGS. The Cu concentration has shown to be important for the efficiency and for other properties of the absorber [2].The measuring technique used in this work has been photoelectron spectroscopy (PES). PES produces a spectrum showing distinct peaks corresponding to electron binding energy levels for specific element subshells. Measurements with different photon energies have been performed on samples with and without post deposition treatment (PDT). A great deal of the effort has been to calculate relative element concentrations based on the PES peak intensities. Two important parameters when performing the calculations are the photoionization cross section (including the angular dependence of the cross section) and the inelastic mean free path of the photoelectrons.The results show that the GGI and the corresponding band gap will be almost the same with and without PDT except for close to the surface where PDT lowers the GGI.The calculations showed that the copper concentration is lowest at the surface. Moreover, PDT with RbF results in lower copper concentration closer to the junction.The results show a discrepancy of the GGI and CGI ratios when using the angular dependent cross sections in [10] and [11] compared to using the cross sections in [6] and [7]. / Det ökande behovet av förnybar energi gör att forskning och utveckling av solenergilösningar är av största vikt. Solceller, vilka utnyttjar den fotovoltaiska effekten, är den vanligaste tekniken för omvandling av solenergi till elektricitet. Tunnfilmssolceller är en typ av solceller vars absorbent har ett direkt bandgap, till skillnad från kisel som har ett indirekt bandgap. Fördelen med ett direkt bandgap är att det ljusabsorberande materialet kan göras mycket tunt.En vanlig tunnfilmssolcell är CIGS. Det är en komposit bestående av koppar (Cu), indium (In), gallium (Ga) och selen (Se). Ett syfte med detta självständiga arbete har varit att beräkna koncentrationerna av de ingående ämnena i halvledarskiktet av CIGS. GGI-kvoten bestämmer bandgapet, vilket är en viktig faktor för solcellens verkningsgrad. Kopparvakansen är den huvudsakliga halvledaracceptorn i CIGS. Kopparkoncentrationen har visat sig vara viktig för bl.a. solcellens verkningsgrad [2].Mättekniken som används i detta arbete kallas fotoelektronspektroskopi (PES). PES-mätningar ger ett spektrum där spektrallinjerna representerar olika nivåer av elektroners bindningsenergi för olika grundämnen. Mätningar med olika fotonenergier, på prover med och utan ytbehandling (PDT), har utförts. En stor del av arbetet har varit att beräkna relativa koncentrationer av de olika grundämnena från spektrallinjerna i spektrumet. Viktiga parametrar som man behöver ta hänsyn till i uträkningarna är sannolikheten för en fotoemissionsprocess hos fotonerna, vinkelberoendet och den fria medelväglängden hos fotoelektronerna.Resultaten visar att GGI-kvot och bandgap blir nästan detsamma med eller utan PDT, förutom närmast ytan där PDT minskar GGI-kvoten.Resultaten visar också att kopparkoncentrationen är lägst på ytan och att PDT med RbF minskar kopparkoncentrationen närmast ytan.Resultaten visar att det blir skillnader mellan GGI- och CGI-kvoterna beroende på om beräkningarna baserats på vinkelberoende träffytor enligt [10] och [11] eller baserats på träffytor enligt [6] och [7].

京都大学 / 新制・課程博士 / 博士(工学) / 甲第24580号 / 工博第5086号 / 新制||工||1974(附属図書館) / 京都大学大学院工学研究科航空宇宙工学専攻 / (主査)教授 江利口 浩二, 教授 土屋 智由, 教授 平方 寛之 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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<p> This thesis presents an investigation of the electron-voltaic effect using epitaxial P-N junctions. The effect is manifested in the direct energy conversion of beta particles emitted from a radioisotope promethium^147 source by single and multi-junction devices. The purpose of the investigation is to determine the power outputs of the devices which may be combined in series and parallel combinations in the construction of an atomic battery with a small size and long lifetime (approximately 5 -10 years). </p> / Thesis / Master of Science (MSc)