Orientador: Luis Vicente de Andrade Scalvi / Banca: José Antonio Malmonge / Banca: José Humberto Dias da Silva / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Neste trabalho foi realizada a deposição através da técnica de evaporação resistiva, de filmes finos de GaAs (arseneto de gálio) e de Al (alumínio) com posterior oxidação deste último, formando 'Al IND. 2''O IND. 3' (óxido de alumínio ou alumina) e a caracterização dos filmes de GaAs e da heteroestrutura formada por 'Al IND. 2''O IND. 3' e GaAs. A confecção do dispositivo combinando estes compostos serviu para a investigação das características relevantes do sistema para potencial aplicação em transistores. O trabalho compreendeu investigação sobre as condições de deposição, e foram avaliadas principalmente as características elétricas dos filmes produzidos individualmente. Os resultados apresentados incluem: resistividade em função da temperatura, corrente-voltagem em função da temperatura, difração de raios-X e transmitância na região do infravermelho. Para caracterização do desempenho do sistema 'Al IND. 2''O IND. 3'/GaAs, um transistor simples foi construído sob um substrato de vidro borossilicato com uma camada de GaAs e outra de 'Al IND. 2''O IND. 3'. Os contatos de fonte, dreno e gate foram feitos de In. Essa estrutura permite a medida da corrente de fuga e a avaliação de outras características do sistema. Neste dispositivo foram avaliadas as características corrente-voltagem em função da temperatura, e também a interação com luz, já que GaAs, por apresentar gap direto, torna-se atraente para aplicações opto-eletrônicas. Assim medidas de elétricas foto-induzidas foram realizadas com excitação com fontes de luz branca. Com o intuito de se avaliar a qualidade dos filmes de GaAs obtidos pela evaporação resistiva, tanto a caracterização estrutural quando elétrica também foram feitas em filmes finos de GaAs depositados por sputtering, de modo a se ter um padrão de comparação. / Abstract: In this work, the deposition of GaAs (gallium arsenide) and Al (aluminum) thin films is carried out by the resistive evaporation technique. In the latter case, an oxidation of the film is accomplished, leading to 'Al IND. 2''O IND. 3' (alumina) formation. The characterization of GaAs thin films and the heterostructure formed by 'Al IND. 2''O IND. 3' and GaAs is also carried out. The elaboration of the device combining these compounds allows investigating the relevant characteristics of this system to potential application in transistors. The work evolved investigation on the deposition conditions, and the electrical characteristics of the films were also evaluated separately. Results includes: resistivity as function of temperature, X-ray diffraction and near infrared transmittance. For characterization of the performance of the 'Al IND. 2''O IND. 3'/GaAs system, a simple transistor was built on a borosilicate glass substrate, with a 'Al IND. 2''O IND. 3' layer on top of a GaAs layer. The contacts of source, drain and gate were done using In. This structure allows evaluating the leak current and other characteristics of this system. In this device, it was evaluated the current - voltage characteristics and the interaction with light, because GaAs, due to its direct bandgap, become very attractive for opto-electronic applications. The, the photo-induced electrical measurements were done under excitation with white light. Aiming the evaluation of the quality of films deposited by the resistive evaporation technique, electrical as well as structural characterization were also carried out for GaAs thin films deposited by sputtering, in order to have a comparing parameter. / Mestre

Orientador: Luiz Vicente de Andrade Scalvi / Banca: Valmor Roberto Mastelaro / Banca: Elisabete Aparecida Andrello Rubo / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Neste trabalho é feita a deposição de filmes finos pela técnica de Evaporação Resistiva a partir de pós de Arseneto de Gálio (GaAs) e compostos de GaAs com Óxidos e Cloretos de Érbio (Er) ou Itérbio (Yb). Trata-se de um método relativamente simples de deposição, no qual os compostos são evaporados conjuntamente. O objetivo é observar a eficiência desse método para a produção desses filmes finos, a partir de compostos que possuam diferentes características, tais como consideráveis diferenças de temperaturas de evaporação. Depositamos filmes em diferentes condições e estequiometrias e analisamos as propriedades estruturais pela técnica de difração de raios-X. A composição qualitativa das amostras foi obtida por energia dispersiva de raios-X. As propriedades ópticas foram analisadas através de medidas de transmitância óptica dentro da faixa do visível ao infravermelho médio. Realizamos também a caracterização elétrica através de medidas de resistência em função da temperatura em filmes de GaAs e composto de GaAs com 'ErCl IND 3'. Apresentamos no apêndice uma proposta de investigação das propriedades de transporte elétrico de uma dessas amostras, envolvendo um modelo para cálculo da condutividade. De imediato, a contribuição deste trabalho é para a compreensão dos fenômenos físicos que acontecem durante o processo de crescimento, e a investigação parâmetros de deposição que viabilizem o emprego da técnica para os diferentes materiais evaporados. / Abstract: In this work, thin film deposition is carried out, using the resistive evaporation technique, from powders of gallium arsenide (GaAs) and erbium (Er) or ytterbium (Yb) oxides and chlorides. It is a relatively simple deposition technique, where the compounds are simultaneously evaporated. The goal is to observe the efficiency of this growth method for the production of thin films, from compounds with distinct characteristics, such as high difference between evaporation temperatures. Films have been deposited under different conditions and stoichiometry, and their structural properties were analyzed by X-ray diffraction technique. Sample composition was obtained by X-ray dispersive energy. Optical properties were analyzed through optical transmittance from visible to medium infrared. Electrical characterization was also carried out, using measurements of resistance as function of temperature for GaAs and GaAs with 'ErCl IND 3' compounds. An appendix is also presented, containing a proposal of electrical transport investigation, involving conductivity calculation. The contribution of this work is towards the understanding of physical phenomena that takes place during the growth process, and the investigation of deposition parameters with make reliable the utilization of this technique for the different evaporated materials. / Mestre

Neste trabalho foi desenvolvido um estudo sistemático dos mecanismos de difusão responsáveis pelo switching de resistência em memórias resistivas. Essas memórias possuem estrutura semelhante a de um capacitor, a qual sofre uma transição de resistência induzida pela aplicação de um campo elétrico. A transição é provocada pela formação de filamentos condutivos no interior da matriz semicondutora. Os filamentos podem ser constituídos por metal originado de um dos eletrodos (ECM) ou por regiões do óxido deficientes em oxigênio (VCM), geradas pela difusão de vacâncias de oxigênio. Dispositivos de TiO2 foram construídos e sua resposta elétrica foi adquirida através de medidas elétricas do tipo I-V para diferentes metais de eletrodo. Técnicas de análise por feixe de íons, como retroespalhamento Rutherford por micro-feixe e perfilometria com reação nuclear ressonante, foram usadas para detalhamento dos processos de difusão. Constatou-se uma dependência do comportamento elétrico em função do método de deposição da camada semicondutora, sua espessura e os parâmetros da medida de tensão. No caso do filamento ser composto por átomos de metal, espectros de micro-RBS foram adquiridos para identificar a sua estrutura no interior do óxido. Ainda, observaram-se bolhas na superfície do eletrodo superior dos dispositivos com difusão de vacâncias de oxigênio após o tratamento elétrico. Nesse mesmo contexto, foi medida a difusividade e energia de ativação da difusão de oxigênio em filmes finos de TiOy. / In this work we developed a systematic study of diffusion mechanisms which are responsible for resistance switching in resistive memories. The structure of these memories is similar to a capacitor which suffers resistance transition induced by electrical field. The transition is caused by the formation of conductive filaments inside the semiconductor matrix. The filaments may be constituted by metal from one of the electrodes (ECM) or by oxygen deficient areas (VCM), generated from oxygen vacancies diffusion. Devices of TiO2 have been built and its electrical response was acquired through electrical measurements (I-V) for different electrode metals. Ion beam techniques such as micro-probe Rutherford Backscattering and Nuclear Reaction Profiling were used to detail the diffusion processes. It was observed a dependence in the electrical behaviour with the semiconductor layer deposition method, its thickness and bias measurement parameters. In the case which filaments are composed by metal atoms, measurements of micro-RBS were performed to identify its structure inside the oxide. Also, bubbles have been observed over the surface of top electrode in devices with oxygen vacancies diffusion after the electrical treatment. In this context, it was measured diffusivity and activation energy for oxygen diffusion in thin TiOy films.

abstract: Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable disks (CD-RW and DVD-RW), microelectromechanical systems (MEMS), microfluidics, and optical communications. One of the significant properties of ChG materials is the change in the resistivity of the material when a metal such as Ag or Cu is added to it by diffusion. This study demonstrates the potential radiation-sensing capabilities of two metal/chalcogenide glass device configurations. Lateral and vertical device configurations sense the radiation-induced migration of Ag+ ions in germanium selenide glasses via changes in electrical resistance between electrodes on the ChG. Before irradiation, these devices exhibit a high-resistance `OFF-state' (in the order of 10E12) but following irradiation, with either 60-Co gamma-rays or UV light, their resistance drops to a low-resistance `ON-state' (around 10E3). Lateral devices have exhibited cyclical recovery with room temperature annealing of the Ag doped ChG, which suggests potential uses in reusable radiation sensor applications. The feasibility of producing inexpensive flexible radiation sensors has been demonstrated by studying the effects of mechanical strain and temperature stress on sensors formed on flexible polymer substrate. The mechanisms of radiation-induced Ag/Ag+ transport and reactions in ChG have been modeled using a finite element device simulator, ATLAS. The essential reactions captured by the simulator are radiation-induced carrier generation, combined with reduction/oxidation for Ag species in the chalcogenide film. Metal-doped ChGs are solid electrolytes that have both ionic and electronic conductivity. The ChG based Programmable Metallization Cell (PMC) is a technology platform that offers electric field dependent resistance switching mechanisms by formation and dissolution of nano sized conductive filaments in a ChG solid electrolyte between oxidizable and inert electrodes. This study identifies silver anode agglomeration in PMC devices following large radiation dose exposure and considers device failure mechanisms via electrical and material characterization. The results demonstrate that by changing device structural parameters, silver agglomeration in PMC devices can be suppressed and reliable resistance switching may be maintained for extremely high doses ranging from 4 Mrad(GeSe) to more than 10 Mrad (ChG). / Dissertation/Thesis / Ph.D. Electrical Engineering 2013

Doença renal crônica é uma afecção comum em cães e gatos, especialmente em gatos senis, e importante causa de morbidade e mortalidade. Além da idade avançada, fatores como alterações congênitas, alimentação inadequada, utilização de drogas nefrotóxicas, intoxicações e doenças infecciosas predispõem às lesões do parênquima renal. Em felinos a descrição histopatológica mais frequente é a nefrite tubulointersticial difusa. Independente da causa do dano ao néfron, a doença renal crônica é uma afecção irreversível e geralmente progressiva. Este estudo teve por objetivo realizar uma análise da contribuição da ultrassonografia utilizando-se o modo B e Doppler colorido e pulsado para o diagnóstico e estagiamento da doença renal crônica em 45 felinos. Sendo 16 do grupo controle, felinos que não portavam manifestações clínicas relacionadas ao sistema urinário, apresentavam concentração sérica de creatinina inferior a 1,6mg/dL; quatro do estágio 1, felinos com taxas de creatinina sérica inferior a 1,6mg/dL com alterações ultrassonográficas; 17 do estágio II, felinos com taxas de creatinina 1,6 a 2,8mg/dL; oito do estágio III / IV, felinos com taxa de creatinina sérica de 2,9 a 5,0mg/dL agrupados aos felinos com taxa de creatinina sérica acima de 5,0mg/dL. Os rins foram avaliados ultrassonograficamente por meio das características: ecogenicidade da cortical, regularidade de contorno e definição corticomedular no modo B; comprimento, largura e altura nos cortes longitudinal, transversal e dorsal no modo B; preenchimento das artérias interlobares, arqueadas e interlobulares por meio do Doppler colorido; e índice de resistividade dos vasos intrarenais por meio do Doppler pulsado. Foi determinada a relação comprimento do rim pelo diâmetro luminal da aorta nos felinos normais e nefropatas. Conclui-se que o aumento da ecogenicidade da cortical demonstrou-se uma característica relevante a ser considerada na avaliação ultrassonográfica da doença renal crônica. O Doppler colorido mostrou-se uma ferramenta importante no diagnóstico da doença renal crônica, especialmente quando as alterações detectadas à avaliação ultrassonográfica pelo modo B não eram expressivas. O índice de resistividade não se apresentou acima do limite da normalidade nos estágios iniciais da doença renal crônica, sugerindo não ser útil como preditor da nefropatia crônica. As alterações na avaliação ultrassonográfica modo B associadas ao aumento do índice de resistividade podem indicar um pior prognóstico da evolução da doença renal crônica. Achados ultrassonográficos como ecogenicidade da cortical aumentada, irregularidade de contorno, indefinição corticomedular, diminuição do preenchimento vascular pelo Doppler colorido e aumento do índice de resistividade são elementos importantes a serem considerados no estabelecimento do diagnostico da doença renal crônica em felinos. / Chronic kidney disease is common in dogs and cats, especially in older cats, and an important cause of morbidity and mortality. Factors like advanced age, congenital alterations, inappropriate nutrition, use of nephrotoxic drugs, intoxications and infectious disease may lead to parenchymal lesions in kidney. The most frequent histopathologic change in cats is diffuse tubulointertitial nephritis. Independent of the cause of the nephron damage, the chronic renal disease is an irreversible and usually progressive affection. This study aim to analyze the contribution of ultrasography in the diagnosis and staging of chronic kidney diseases using B mode, color Doppler and spectral Doppler. Sixteen presenting no manifestation of urinary disease and serum creatinine levels less than 1,6mg/dL served at control group; four cats represented stage I, with serum creatinine levels less than 1,6mg/dL and ultrasonographic changes; 17 cats represented stage II, with serum creatinine levels between 1,6 and 2,8mg/dL; eight cats represented stage III/IV, with serum creatinine levels between 2,9 e 5,0mg/dL, grouped with the felines with serum creatinine levels above 5,0mg/dL. The kidneys underwent an ultrasonographic examination observing: cortical echogenicity, regularity of the contour and corticomedullary definition in the B mode; length, width and height in the longitudinal, transverse and dorsal planes in the B mode; filling of the interlobars, arcuate and interlobulars arteries by the color Doppler; and resistive index of the intrarenal vessels using the pulsed Doppler. The ratio between the length of the kidney and the luminal diameter of the aorta in normal felines and in felines with kidney disease was established. The increase in echogenicity of the cortex showed to be a relevant characteristic to be considered in the ultrasonographic evaluation of chronic kidney disease. The color Doppler showed to be an important tool in the diagnosis of the chronic kidney disease, especially when the alterations in the B mode werent expressive. The resistive index did not present itself above of the normal limits in the initial stages of the chronic kidney disease, suggesting its uselessness as a predictor of the chronic kidney disease. Changes in B mode associated with increase in resistive index may indicate a poor prognostics of the chronic kidney disease. Increase in the echogenicity of the cortical, contour irregularity, corticomedullary indefinition, reduced vascular filling detected by color Doppler and the increase in the resistive index were important elements to be considered in the diagnosis of the chronic kidney disease.

Reconfigurable antennas are attractive for many military and commercial applications where it is required to have a single antenna that can be dynamically reconfigured to transmit or receive on multiple frequency bands and patterns. RF-MEMS is a promising technology that has the potential to revolutionize RF and microwave system implementation for next generation telecommunication applications. Despite the efforts of top industrial and academic labs, commercialization of RFMEMS switches has lagged expectations. These problems are connected with switch design (high actuation voltage, low restoring force, low power handling), packaging (contamination layers) and actuation control (high impact force, wear, fatique). This Thesis focuses on the design and control of a novel ohmic RF-MEMS switch specified for reconfigurable antennas applications. This new switch design focuses on the failure mechanisms restriction, the simplicity in fabrication, the power handling and consumption, as well as controllability. Finally, significant attention has been paid in the switch’s electromagnetic characteristics. Efficient switch control implies increased reliability. Towards this target three novel control modes are presented. 1) Optimization of a tailored pulse under Taguchi’s statistical method, which produces promising results but is also sensitive to fabrication tolerances. 2) Quantification of resistive damping control mode, which produces better results only during the pull-down phase of the switch while it is possible to be implemented successfully in very stiff devices. 3) The “Hybrid” control mode, which includes both aforementioned techniques, offering outstanding switching control, as well as immunity to fabrication tolerances, allowing an ensemble of switches rendering an antenna reconfigurable, to be used. Another issue that has been addressed throughout this work is the design and optimization of a reconfigurable, in pattern and frequency, three element Yagi-Uda antenna. The optimization of the antenna’s dimensions has been accomplished through the implementation of a novel technique based on Taguchi’s method, capable of systematically searching wider areas, named as “Grid-Taguchi” method.

Abstract The purpose of the present research was (I-II) to evaluate the effects of clinical, hand-held Doppler (HHD) and duplex ultrasonographic examinations on the planning of operative procedure for primary varicose veins, (III) to assess the feasibility, safety and efficacy of endovenous saphenous vein obliteration with radiofrequency-resistive heating and (IV) to compare endovenous saphenous vein obliteration with conventional stripping operation in terms of short-term recovery and costs. Sixty-two legs (in 49 consecutive patients) and 142 legs (in 111 consecutive patients) with primary uncomplicated varicose veins were examined clinically and with HHD and duplex ultrasonography for planning the subsequent treatment. At the saphenous-femoral junction (SFJ) and at the saphenous-popliteal junction (SPJ), sensitivity was 56-64% and 23%, specificity 93-97% and 96%, positive predictive value 97-98% and 43% and negative predictive value 44-45% and 91%, respectively. In 9% of the cases, the treatment plan was modified on the basis of the duplex ultrasound findings. The present study showed that, in primary uncomplicated varicose veins, the accuracy of HHD is unsatisfactory. Thirty legs of 27 patients with varicose veins were treated using an endovenous catheter (Closure® System, VNUS Medical Technologies, Inc., Sunnyvale, CA), which was inserted under ultrasound guidance via a percutaneous puncture or a skin incision. The persistence of vein occlusion and complications potentially attributable to the endovenous treatment were assessed at 1-week, 6-week, 3-month, 6-month and 1-year follow-up visits. By the time of the last follow-up visit, occlusion of the treated segment of the LSV had been achieved in 22 (73.3%) legs. Persisting patency or recanalization of LSV was detected in 8 legs (26.7%). Postoperative complications included saphenous nerve paresthesia in 3 legs (10%) and thermal skin injury in one limb (3.3%). Twenty-eight selected patients admitted for operative treatment of varicose veins in the tributaries of the primary long saphenous were randomly assigned to endovenous obliteration (n = 15) or stripping operation (n = 13). The patients were followed up for 7-8 weeks postoperatively and examined by duplex ultrasonography. The comparison of costs included both direct medical costs and costs due to lost of productivity. All operations were successful, and the complication rates were similar in the two groups. The sick leaves were significantly shorter in the endovenous obliteration group [6.5 (SD 3.3) vs. 15.6 (SD 6.0), 95 % CI 5.4 to 12.9, p < 0.001, t-test]. When the value of the lost working days was included, the endovenous obliteration was societally cost-saving.

京都大学 / 0048 / 新制・課程博士 / 博士(人間健康科学) / 甲第22890号 / 人健博第82号 / 新制||人健||6(附属図書館) / 京都大学大学院医学研究科人間健康科学系専攻 / (主査)教授 市橋 則明, 教授 林 悠, 教授 妻木 範行 / 学位規則第4条第1項該当 / Doctor of Human Health Sciences / Kyoto University / DFAM

Diese Arbeit beschäftigt sich mit den elektrischen Eigenschaften der resistiven Schaltmaterialien SrTiO3 und NbO2. Im ersten Teil werden NbO2 (001)-Dünnschichten untersucht. Bisher sind die für NbO2-Dünnschichten in der isolierenden Phase gemessenen spezifische Widerstände um einen Faktor von 200 niedriger als der in NbO2-Einkristallen gemessene 10 kΩ cm Widerstand. In dieser Arbeit wird der spezifische Widerstand von NbO2-Dünnschichten auf 945 Ω cm erhöht. Es wird gezeigt, dass leitfähige Perkolationspfade entlang der Korngrenzen für die Abnahme des spezifischen Widerstandes verantwortlich sind. Durch temperaturabhängige Leitfähigkeitsmessungen wurden Defektzustände identifiziert, die für die Verringerung des spezifischen Widerstandes gegenüber dem theoretischen Wert verantwortlich sind. Im zweiten Teil wird der Einfluss des Ti-Antisite Defekts auf das resistive Schalten in SrTiO3 Dünnschichten untersucht, welche mit metallorganischer Dampfphasenepitaxie gezüchtet wurden. Dabei werden sowohl stoichiometrische als auch Strontium defizitäre Schichten untersucht. Es wird über temperaturabhängige Permittivitätsmessungen gezeigt, dass durch Kristalldefekte die weiche Phononenmode gestört wird und bei stark strontiumverarmten Schichten polare Nanoregionen gebildet werden, was auf die Bildung des TiSr Defekts zurückgeführt wurde. Darüber hinaus wird gezeigt, dass stark strontiumdefiziente SrTiO3 -Schichten ein stabiles resistives Schalten mit einem Ein-Aus-Verhältnis von 2e7 bei 10 K aufweisen, während stöchiometrische Dünnschichten kein stabiles Schalten zeigen. Es wird ein diodenartiger Transportmechanismus, der im hochohmigen Zustand auf Schottkyemission beruht und ihm niederohmigen Zustand durch defektassistierten Tunnelstrom dominiert wird, identifiziert. Daraus wurde ein neues Modell für das resistive Schalten, basierend auf dem TiSr Defekt und der induzierten Ferroelektrizität, entwickelt. / In this work, the impact of crystal defects on the resistive switching materials SrTiO3 and NbO2 is investigated. The work is divided into two parts. In the first part, NbO2 (001) thin films are studied. So far, resistivities measured for NbO2 thin films in the insulating phase are by a factor of 200 lower than the 10 kΩ cm resistivity measured in NbO2 single crystals. To make this material applicable for resistive switching, the resistivity in the insulating phase has to be increased to effectively block the current in the high resistive state. Throughout the investigations presented in this work, the resistivity of NbO2 thin films is increased to 945 Ω cm. It is shown that conductive percolation paths along the grain boundaries are responsible for the decrease in resistivity. Temperature-dependent conductivity measurements identified defect states responsible for the reduction in resistivity from the theoretical value. In the second part of this work, the influence of the Ti anti-site defect on resistive switching in SrTiO3 thin films grown by metal-organic vapor phase epitaxy is studied. Both stoichiometric and strontium deficient thin films are studied. It is shown via temperature-dependent permittivity measurements that crystal defects harden the soft phonon mode and polar nano regions are formed in highly strontium deficient films, which was attributed to the formation of Ti antisite defects. In addition, highly strontium deficient SrTiO3 films are shown to exhibit stable resistive switching with an on-off ratio of 2e7 at 10 K, whereas stoichiometric thin-films do not show stable switching. A diode-like transport mechanism based on Schottky emission in the high-resistance state and dominated by defect-assisted tunneling current in the low-resistance state is identified. From this, a new model for resistive switching based on the Ti antisite defect and the induced ferroelectricity is developed.

This diploma thesis is focused on synthetic loads, especially electronically controlled loads. The thesis analyse principles of mechanically and electronically controlled loads and theirs operation modes. The paper also carried out a search of AC loads available on the market. The parameters of the AC load were based on the requirements provided by client. The functionality of the designed load is verified by simulation. The thesis continues with realization of the designed schematics and bringing the load to function. At the last section of the thesis are detail parameters of the designed load verified by measurement.