The purpose of this study is to investigate the role of strain in the accumulation of crystalline defects created by ion irradiation. Previous studies state that strained Si1xGex is more easily amorphized by ion irradiation than unstrained, bulk Si in a periodic superlattice structure; however, the reason for preferential amorphization of the strained Si1xGex layer in the periodic structure of strained and unstrained layers is not well understood. In this study, various ion irradiations will be carried out on SiGe strained layer superlattices grown on (100)-orientation bulk Si by low temperature molecular beam epitaxy. The samples under investigation are 50 nm surface Si0:8Ge0:2/bulk Si and 50 nm surface Si/60 nm Si0:8Ge0:2/bulk Si. Defects will be created in both surface and buried SiGe strained layers by medium and high energy light ion irradiation. The amount of permanently displaced atoms will be quantified by channeling Rutherford backscattering spectrometry. The amorphization model, the path to permanent damage creation, of bulk Si and surface strained SiGe will be investigated. The strain in surface and buried Si0:8Ge0:2 layers will be measured by comparison to bulk Si with Rutherford backscattering spectrometry by a novel technique, channeling analysis by multi-axial Rutherford backscatter- ing spectrometry, and the limitations of measuring strain by this technique will be explored. Results of this study indicated that the amorphization model, the number of ion collision cascades that must overlap to cause permanent damage, of strained Si0:8Ge0:2 is similar to that of bulk Si, suggesting that point defect recombination is less efficient in strained Si0:8Ge0:2. Additionally, a surface strained Si0:8Ge0:2 is less stable under ion irradiation than buried strained Si0:8Ge0:2. Repeated analysis by multi-axial channeling Rutherford backscattering spectrometry, which requires high fluence of 2 MeV He ions, proved destructive to the surface strained Si0:8Ge0:2 layer.

A review of the main natural dyes (particularly yellow flavonoids and red anthraquinones) and proteinaceous substrates used in Historical Tapestries and North American porcupine quill work was undertaken, and is summarised in Chapter 1. The analysis of natural dyes which have been used on museum artefacts other than textiles has received little systematic study, particularly those of non-European origin. In this research, the use of Ultra Performance Liquid Chromatography (UPLC) for study of natural dyes found on historical textiles and ethnographical objects decorated with porcupine quill work is explored; this required a transfer of existing analytical protocols and methodology. The advantages of using Ultra Performance Liquid Chromatography (UPLC) was evaluated through a method development based on the separation and quantification of ten flavonoid and anthraquinone dyes as described in Chapter 2. These methods were then applied to the characterisation of the dye sources found on a group of sixteenth century historical tapestries which form an important part of the Burrell Collection in Glasgow and are believed to have been manufactured in an English workshop (Chapter 3) and also to the analysis of some late nineteenth century North American porcupine quill work from a collection owned by National Museums Scotland (Chapter 5); allowing exciting conclusions to be drawn in each case about the range of dyestuffs used in their manufacture. The second aim of this research was the development of methodology for the non-invasive quantification of metal ion residues on porcupine quill substrates. This was achieved through a comparative study of reference porcupine quills prepared in-house with dyebaths containing a range of metal ion concentrations (copper and tin). The concentration of metal ions sorbed by the porcupine quills was then quantified with Inductively Coupled Plasma (ICP) coupled to Optical Emission Spectrometry (OES) and non-invasive Particle Induced X-Ray Emission analysis (PIXE) coupled with Rutherford Backscattering Spectrometry (RBS) as described in Chapter 4. The responses provided by the different methods were compared and they were then applied to the study of micro-samples collected from mid-nineteenth century Northern Athapaskan porcupine quill work. Unexpectedly, the use of UPLC analysis and RBS-PIXE analysis allowed the characterisation of traded European natural dyes used with metallic mordants (copper and tin) on these samples, highlighting how European contact impacted on traditional Athapaskan porcupine quill work in the late nineteenth century (Chapter 5).

The scope of this thesis is the study of the interplay between structure and magnetism in amorphous materials. The investigations focus on the growth of amorphous layers and the study of the influence of structural disorder and reduced physical extension on the magnetic properties of thin films and multilayers. The examined magnetic materials are FeZr alloys, as well as other amorphous transition metal alloys such as CoZr and FeCoZr. Thin films and multilayers of the studied materials were deposited using magnetron sputtering in ultra-high vacuum conditions. Their amorphous structure and layering quality was investigated using X-ray scattering techniques and in several cases with transmission electron microscopy. The chemical composition of the alloys was determined with Rutherford Backscattering Spectrometry. The magnetic properties were investigated using the magneto-optic Kerr effect and SQUID magnetometry, as well as polarized neutron reflectometry and X-ray magnetic circular dicroism measurements. For FeZr alloys deposited as multilayers with Al2O3 as spacer layer, it was found that Fe-rich nanocrystallites, formed at the metal/oxide interfaces, exert large influence on the magnetic properties. The use of AlZr alloys as buffer layers promotes the growth of highly amorphous FeZr layers. FeZr/AlZr multilayers with good layering quality can also be obtained. The influence of the reduced layer thickness on the magnetic moment, Curie temperature and magnetic dimensionality of the magnetic layers is addressed for FeZr/AlZr multilayers. Thin FeZr layers in these structures are found to belong to the 2D XY dimensionality class. The change of the magnetic moment and Curie temperature with reduced FeZr layer thickness is quantified. In addition, the induced magnetic moment in the alloy element Zr was investigated in FeZr and CoZr alloy films. The possibility to imprint a preferred magnetization direction during thin film preparation was demonstrated for FeCoZr layers. Lastly, AlZr alloy films were studied with respect to their oxidation stability at room and elevated temperatures, aiming towards development of materials with passivating properties.

Properties of magnetic thin film devices cannot be understood without detailed knowledge of their structure. For this purpose, a variety of thin film and multilayer systems have been studied. Both reciprocal space (low energy electron diffraction, reflection high energy electron diffraction, X-ray diffraction and reflectometry) and direct space (transmission electron microscopy) as well as Rutherford backscattering spectrometry have been applied. To gain understanding of an oxidation procedure for the growth of magnetite layers, thermal stability of iron layers on molybdenum seed layers has been investigated. Following the mosaicity and the out-of-plane coherence length over different ratios between the constituting layers allowed a deeper understanding of the limits of metallic superlattices. This, together with an approach to use hydrogen in the process gas during magnetron sputter epitaxy, opens routes for the growth of metallic superlattices of superior quality. A non-isostructural multilayer/superlattice system, Fe/MgO, has been investigated. In turn, this gave more understanding how superlattice diffraction patterns are suppressed by strain fields. As an alternative route to single-crystalline superlattices, amorphous multilayers present interesting opportunities. In this context, crystallization effects of iron/zirconium layers on alumiunium oxide were studied. Understanding these effects enables significant improvement in the quality of amorphous multilayers, and allows avoiding these, growing truly amorphous layers. Both the substantial improvement in quality of metallic superlattices, approaching true single-crystallinity, as well as the improvements in the growth of amorphous multilayers give rise to opportunities in the field of magnetic coupling and superconducting spin valves.

Solar absorber coatings are one of the key components in concentrated solar power (CSP) plants. Currently operating at temperatures up to 565°C and suffering from emissive losses, their energy conversion efficiency could be improved by applying high-temperature stable materials with solar selective properties, i.e. high absorptivity and low emissivity. In this work, the transparent conductive oxide (TCO) SnO2:Ta is developed as a solar selective coating (SSC) for CSP absorbers. Starting with simulations covering basic requirements for SSCs, the deposition process of SnO2:Ta is optimized and extensive optical characterization and modelling are performed. It is shown that upon covering with a SiO2 antireflective layer, a calculated absorptivity of 95% and an emissivity of 30% are achieved for the model configuration of SnO2:Ta on top of a perfect black body (BB). High-temperature stability of the developed TCO up to 800 °C is shown in situ by spectroscopic ellipsometry and Rutherford backscattering spectrometry. The universality of the concept is then demonstrated by transforming silicon and glassy carbon from non-selective into solar selective absorbers by depositing the TCO on top of them. Finally, the energy conversion efficiencies ηCSP of SnO2:Ta on top of a BB and an ideal non-selective BB absorber are compared as a function of solar concentration factor C and absorber temperature TH.

Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter deposition. In this study, the effect of both deposition and post annealing conditions have been evaluated in regards to film structure, composition, surface contamination, and device performance. Both the variation of oxygen partial pressure during deposition and the temperature of the post-deposition annealing were found to have a significant impact on TFT properties. X-ray diffraction data indicated that the ZTO films remain amorphous even after annealing to 600° C. Rutherford backscattering spectrometry indicated that the Zn:Sn ratio of the films was ~1.7:1 which is slightly tin rich compared to the sputter target composition. X-ray photoelectron spectroscopy data indicated that the films had significant surface contamination and that the Zn:Sn ratios changed depending on sample annealing conditions. Electrical characterization of ZTO films using TFT test structures indicated that mobilities as high as 17 cm² V⁻¹ s⁻¹ could be obtained for depletion mode devices. It was determined that the electrical properties of ZTO films can be precisely controlled by varying the deposition conditions and annealing temperature. It was found that the ZTO electrical properties could be controlled where insulating, semiconducting and conducting films could be prepared. This precise control of electrical properties allowed us to incorporate sputter deposited ZTO films into resistive random access memory (RRAM) devices. RRAM are two terminal nonvolatile data memory devices that are very promising for the replacement of silicon-based Flash. These devices exhibited resistive switching between high-resistance states to low-resistance states and low-resistance states to high-resistance states depending on polarity of applied voltages and current compliance settings. The device switching was fundamentally related to the defect states and material properties of metal and insulator layers, and their interfaces in the metalinsulator-metal (MIM) structure. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from Jan. 6, 2012 - Jan. 6, 2013

Transition metal interface effects of on the crystallization of carbon and silicon were investigated. The graphitization of carbon was studied by ion beam sputter deposition of atomic carbon onto a nickel surface at temperatures ranging from room temperature to 550 °C. The resulting films were characterized by X-ray photoelectron spectroscopy, nuclear reaction analysis combined with Rutherford backscattering spectrometry, Raman spectroscopy and transmission electron microscopy. A temperature-induced and a nickel-induced effect on the graphitic ordering is demonstrated. The carbon films showed a two layered structure: directly on the nickel surface up to 8 monolayers of graphitic carbon, further deposited carbon formed less ordered structures, preferably perpendicular to the surface. The results are discussed on the basis of hyperthermal atom deposition, surface diffusion, metal-induced crystallization and dissolution-precipitation. The analysis points to a dominating role of surface diffusion-assisted crystallization in the carbon ordering process. The kinetics of silver-induced crystallization of amorphous silicon were studied in a series of isothermal annealing experiments at 350 °C, 400 °C, 450 °C and 500 °C. The annealing process was monitored in situ employing Raman spectroscopy and Rutherford backscattering spectrometry from which time resolved information on the phase transformation and hence the kinetics are obtained. The grain structure of the crystallized silicon film was investigated with optical and scanning electron microscopy which reveals grain diameters of 5 to 8 µm. The small scale crystallinity was measured with X-ray diffraction and crystal domain sizes from 20 to 50 nm were observed. The phase transformation kinetics are discussed based on the Johnson-Mehl-Avrami-Kolmogorov theory. The analysis points to a two-dimensional, diffusion limited process with fast Avrami-type nucleation and an activation energy of 0.8 eV/at.:Contents 1. Introduction 2. Metal-Induced Crystallization 2.1. Introduction and State of the Art of Metal-Induced Crystalliza-tion 2.2. Thermodynamics of Metal-Induced Crystallization 2.3. Kinetics of Metal-Induced Crystallization 3. Ion Beam Analysis 3.1. Rutherford Backscattering Spectrometry 3.2. Nuclear Reaction Analysis 4. Raman Spectroscopy 4.1. Light Scattering in Solids 4.2. Theory 4.2.1. The Raman Spectrum of Graphitic Carbon 4.2.2. The Silicon Raman Spectrum 5. The Cluster Tool at the Ion Beam Center 5.1. General Concept 5.2. Sputtering Chamber 5.3. The Environmental Chamber 5.4. The Analysis Chamber 5.5. The Ion Beam Analysis Chamber 5.5.1. The Experimental Setup 6. The Carbon Nickel System 6.1. Experimental Details 6.1.1. Film growth 6.1.2. Characterization 6.2. Results 6.3. Discussion 7. The Silicon Silver System 7.1. Experimental 7.1.1. Film Preparation 7.1.2. In Situ Raman Spectroscopy 7.1.3. In Situ Rutherford Backscattering Spectrometry 7.2. Results 7.2.1. Raman Spectroscopy 7.2.2. Rutherford Backscattering Spectrometry 7.2.3. X-ray Diffraction 7.2.4. Optical and Scanning Electron Microscopy 7.3. Discussion 8. Conclusion and Outlook A. Appendix A.1. Spectroscopic Lineshapes A.1.1. The Lorentzian Lineshape A.1.2. The Breit-Wigner-Fano Lineshape A.1.3. The Doniach-Sunjic Lineshape A.1.4. The Gaussian Lineshape A.1.5. The Voigt Lineshape A.2. Statistcial Distribution Functions A.2.1. The Gamma Distribution Bibliography / Der Einfluss von Übergangsmetallkontaktflächen auf die Kristallisation von Kohlenstoff und Silizium wurde untersucht. Dazu wurde Kohlenstoff bei Temperaturen von Raumtemperatur bis 550 °C auf Nickel mittels Ionenstrahl-Sputtern abgeschieden. Die so erzeugten Filme wurden mit Röntgenphotoelektronen Spektroskopie, Kernreaktionsanalyse kombiniert mit Rutherford Rückstreu Spektrometrie, Raman Spektroskopie und Transmissions-Elektronenmikroskopie charakterisiert. Ein Nickel- und ein Temperatureffekt auf den Graphitisierungsprozess wird nachgewiesen. Die Kohlenstofffilme zeigten einen zweilagigen Aufbau: Direkt auf der Nickeloberfläche bis zu 8 Monolagen graphitischen Kohlenstoffs, weiterer abgeschiedener Kohlenstoff bildet weniger geordnete Strukturen, die bevorzugt senkrecht zur Oberfläche ausgerichtet sind. Die Ergebnisse werden auf Basis von hyperthermischer, atomarer Abscheidung, Oberflächendiffusion, Metall-induzierte Kristallisation und Lösung-Ausfällung diskutiert. Die Analysen deuten auf eine dominante Rolle der Oberflächendiffusion im Graphitisierungsprozess hin. Die Kinetik der Silber-induzierten Kristallisation von amorphen Silizium wurde in einer Reihe von isothermalen Temperexperimenten bei 350 °C, 400 °C, 450 °C und 500 °C untersucht. Der Tempervorgang wurde mit in situ Raman Spektroskopie und in situ Rutherford Rückstreu Spektrometrie charakterisiert, wodurch zeitaufgelöste Information über den Phasenübergang und damit die Kinetik gewonnen wurden. Das Gefüge der entstandenen Siliziumschichten wurde mit optischer und Rasterelektronenmikroskopie untersucht, welche Korndurchmesser von 5 bis 8 µm zeigten. Die Kristallinität wurde mit Röntgendiffraktometrie analysiert. Hierdurch wurden Kristallitgrößen von 20 bis 50 nm bestimmt. Die Kinetik des Phasenüberganges wird anhand der Johnson-Mehl-Avrami-Kolmogorov Theorie diskutiert. Dies deutet auf einen zeidimensionalen, diffusionslimitierten Prozess mit schnell abklingender Avrami-Keimbildung hin. Die Aktivierungsenergie wurde zu 0.8 eV/At. bestimmt.:Contents 1. Introduction 2. Metal-Induced Crystallization 2.1. Introduction and State of the Art of Metal-Induced Crystalliza-tion 2.2. Thermodynamics of Metal-Induced Crystallization 2.3. Kinetics of Metal-Induced Crystallization 3. Ion Beam Analysis 3.1. Rutherford Backscattering Spectrometry 3.2. Nuclear Reaction Analysis 4. Raman Spectroscopy 4.1. Light Scattering in Solids 4.2. Theory 4.2.1. The Raman Spectrum of Graphitic Carbon 4.2.2. The Silicon Raman Spectrum 5. The Cluster Tool at the Ion Beam Center 5.1. General Concept 5.2. Sputtering Chamber 5.3. The Environmental Chamber 5.4. The Analysis Chamber 5.5. The Ion Beam Analysis Chamber 5.5.1. The Experimental Setup 6. The Carbon Nickel System 6.1. Experimental Details 6.1.1. Film growth 6.1.2. Characterization 6.2. Results 6.3. Discussion 7. The Silicon Silver System 7.1. Experimental 7.1.1. Film Preparation 7.1.2. In Situ Raman Spectroscopy 7.1.3. In Situ Rutherford Backscattering Spectrometry 7.2. Results 7.2.1. Raman Spectroscopy 7.2.2. Rutherford Backscattering Spectrometry 7.2.3. X-ray Diffraction 7.2.4. Optical and Scanning Electron Microscopy 7.3. Discussion 8. Conclusion and Outlook A. Appendix A.1. Spectroscopic Lineshapes A.1.1. The Lorentzian Lineshape A.1.2. The Breit-Wigner-Fano Lineshape A.1.3. The Doniach-Sunjic Lineshape A.1.4. The Gaussian Lineshape A.1.5. The Voigt Lineshape A.2. Statistcial Distribution Functions A.2.1. The Gamma Distribution Bibliography

Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion nahe. / This thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion.

Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im Anfangsstadium untersucht. Auf Grund der exzellenten Tiefenauflösung von 0,3 nm an der Oberfläche stand die Analyse von Konzentrationsprofilen in ultradünnen Schichten, respektive an deren Grenzflächen im Vordergrund. Zur qualitativen Verbesserung der Messergebnisse wurde erstmals ein zweidimensionaler positionsempfindlicher Halbleiterdetektor in den Aufbau der HR-RBS implementiert und charakterisiert. Außerdem wurde ein Messverfahren in Betrieb genommen, das mögliche Schädigungen durch den Ioneneintrag in die Messprobe minimiert. Durch die Optimierung der experimentellen Bedingungen und die Entwicklung eines Programmpaketes zur Unterstützung des Analysten konnte ein effizienter Routine-Messablauf erstellt werden. Im Moment einer binären Kollision zwischen einfallendem Ion und Targetelement kommt es bei kleinem Stoßparameter zu Veränderungen des Ladungszustands der gestreuten Ionen, insbesondere durch die abrupte Geschwindigkeitsänderung des Projektils und der Überlappung der Elektronenwolken. Bei der HR-RBS mit Energie separierendem Dipolmagneten muss zur Interpretation von Streuspektren die Ladungszustandsverteilung der gestreuten Projektile bekannt sein. Erstmalig konnte eine signifikante Abhängigkeit der Ladungszustandsverteilung gestreuter C-Ionen sowohl von der Schichtdicke als auch der Ordnungszahl des detektierten Targetelements, hier der vierten Nebengruppe, nachgewiesen werden. Diese gewonnen Erkenntnisse ermöglichten systematische Untersuchungen zum ZrO2-Schichtwachstum im Anfangsstadium. Zur Herstellung der ZrO2-Schichten wurde die Atomlagenabscheidung (ALD) verwendet. Anhand der nachgewiesenen Agglomeration von ZrO2 auf nativen SiO2 wurde mithilfe der Rasterkraftmikroskopie (AFM) zur Bestimmung von Oberflächenrauigkeiten eine Methode konzipiert, welche die Auswirkung lokaler Schichtdickeninhomogenitäten auf die niederenergetische Flanke eines Streuspektrums berücksichtigt. Auf dieser Grundlage durchgeführte Simulationsrechnungen ergeben, dass keine Diffusion von Zr in die darunter liegende Schicht stattfand, jedoch eine ZrSiO4-Grenzflächenschicht existiert. Für das Wachstum von ZrO2 auf TiN wird aus den hoch aufgelösten Streuspektren ein völlig anderes Verhalten abgeleitet. Messungen zu Oberflächentopografien der TiN-Schicht liefern nicht zu vernachlässigende Werte für die Rauigkeit. Um den Einfluss der Oberflächenrauigkeit auf die Form des hoch aufgelösten Spektrums erfassen zu können, wurde eine Software entwickelt. Auf Basis von AFM-Messungen ermöglicht dieses Programm das Extrahieren einer Energieverteilung aus den Weglängen von ausschließlich an der Oberfläche gestreuten Ionen. Unter Berücksichtigung des Effekts der Oberflächenrauigkeit auf die HR-RBS Spektrenform konnte die Diffusion von Zr in das polykristalline TiN erstmals verifiziert werden. Die Beobachtungen weisen daraufhin, dass bereits nach dem ersten ALD-Zyklus ein geringer Anteil der deponierten Zr-Atome bis in eine Tiefe von etwa 3 nm in das TiN diffundiert. Die vorläufigen Ergebnisse legen Korngrenzendiffusion nahe. / This thesis originated from a cooperation between Research Center Dresden-Rossendorf and Qimonda Dresden GmbH & Co. OHG. By means of High Resolution Rutherford Backscattering Spectrometry (HR-RBS) the diffusion behaviour and layer growth of ZrO2 on SiO2 and TiN in the initial regime were investigated. The analysis of concentration profiles in ultrathin layers and interfaces was the focus of this work, made possible by the excellent depth resolution of less than 0.3 nm near the surface. For the first time a two-dimensional position sensitive semiconductor detector was implemented and characterized in the setup of the HR-RBS for the improvement of the quality of the measurement results. Furthermore, a measurement procedure was put into operation that allowed the reduction of ion induced damage. Through the optimization of the experimental conditions and the development of a program package for the support of the analyst, an efficient measurement procedure could be routinely ensured. At the time of a binary collision between the incident ion and the target element with a small impact factor, the charge state changes frequently, especially due to the abruptly decreasing ion velocity of the projectile and the overlapping of the electron clouds. For HR-RBS with an energy-separating dipole magnet, the charge state distribution of the scattered ions must be known for the interpretation of the measured spectra. For the first time a significant dependence of the charge state distribution of the scattered C ions on the layer thickness as well as atomic number of the detected target elements, here from the fourth subgroup, was emonstrated. This new knowledge allowed systematic investigations of the ZrO2 layer growth in the initial regime. The ZrO2 layers were produced by means of the atomic layer deposition (ALD). Based on the evidence for agglomeration of ZrO2 on SiO2 a method was introduced, which takes local thickness variations into account during the simulation of the HR-RBS spectra. An accurate statement about the ZrO2/SiO2 interface was possible due to the extraction of the thickness variation by the atomic force microscopy (AFM). The boundary surface is sharp except for a small intermediate ZrSiO4 layer and no diffusion of Zr atoms in SiO2 could be detected. A quite different behaviour could be derived from high resolution spectra for the growth of ZrO2 on TiN. Measurements of the surface topography of the TiN layer revealed non negligible values for the surface roughness. A program was developed to capture the influence of the surface roughness on the shape of the high resolution spectrum. This software uses AFM measurements to extract an energy distribution from calculated path length differences for ions scattered at the sample surface. Diffusion of Zr into polycrystalline TiN was demonstrated for the first time taking into account the effect of the surface roughness on the shape of the spectra. This observation indicates that already after the first ALD reaction cycle a small part of the deposited Zr atoms diffuses into the TiN layer up to a depth of 3 nm. Such preliminary results suggest grain boundary diffusion.