ABSTRACT Fabrication and Characterization of Torsional Micro-Hinge Structures Mike Marrujo There are many electronic devices that operate on the micrometer-scale such as Digital Micro-Mirror Devices (DMD). Micro actuators are a common type of DMD that employ a diaphragm supported by torsional hinges, which deform during actuation and are critical for the devices to have high stability and reliability. The stress developed within the hinge during actuation controls how the actuator will respond to the actuating force. Electrostatically driven micro actuators observe to have a fully recoverable non-linear viscoelastic response. The device consists of a micro-hinge which is suspended by two hinges that sits inside a micro machined well. To achieve a specific angle of rotation when actuated, the mechanical forces need to be characterized with a range of different forces applied to the edge of the micro-hinge. This research investigates the mechanical properties and the amount of force needed to rotate to specific angles by comparing theoretical performance to experimentally measured values. Characterizing the mechanical forces on the micro-hinge will further the understanding of how the device operates under a specific applied force. The material response to the amount of stress within the hinges will control the amount of actuation that is achieved by that force. The test devices were fabricated using common semiconductor fabrication techniques. The micro-hinge device was created on a 500µm, double-sided polished, single crystal (100) silicon wafer. In order to create this device, both wet etching and dry etching techniques were employed to produce an 8µm thick plate structure. The bulk etching of 480µm was achieved by wet etching down into the silicon (Si) to create the wells. Dry etching was used for its high precision to release the micro-hinge structure. Once fabricated, the micro-hinge actuators were tested using a Technics turntable arm with a built in micrometer that applied a constant force while measuring the displacement of the actuator. The rotation of the hinge was measured by reflecting a Helium-Neon (HeNe) laser beam off a mirror, which is attached to the pivot of the arm that’s applying the force, and any type of displacement was recorded with a Photo Sensitive Device (PSD). The test stand applied a small force which replicated the amount of electrostatic forces needed to achieve a specific degree of rotation. Results indicate that the micro-hinge achieved a repeatable amount of rotation when forces were applied to it. The micro-hinge would endure deformation when too much force would be applied and yield a maximum amount of force allowed.

Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom gratings, error gratings, 3-fold symmetric photonic crystal, and 2-fold symmetric nano-imprinted gratings. PKU used our simulation results to fabricate GaN high brightness LEDs from the results of our simulation models. We employed the use of the finite difference time domain (FDTD) method, a computational electromagnetic solution to Maxwell’s equations, to measure light extraction efficiency improvements of the various grating structures. Since the FDTD method was based on the differential form of Maxwell’s equations, it arbitrarily simulated complex grating structures of varying shapes and sizes, as well as the reflection, diffraction, and dispersion of propagating light throughout the device. We presented the optimized case, as well as the optimization trend for each of the single grating structures within a range of simulation parameters on the micron scale and find that single grating structures, on average, doubled the light extraction efficiency of GaN LEDs. Photonic crystal grating research in the micron scale suggested that transmission gratings benefit most when grating cells tightly pack together, while reflection gratings benefit when grating cells space further apart. The total number of grating cells fabricated on a reflection grating layer still affects light extraction efficiency. For the top and bottom grating structures, we performed a partial optimization of the grating sets formed from the optimized single grating cases and found that the direct pairing of optimized single grating structures decreases overall light extraction efficiency. However, through a partial optimization procedure, top and bottom grating designs could improve light extraction efficiency by 118% for that particular case, outperforming either of the single top or bottom grating cases alone. Our research then explored the effects of periodic, positional perturbation in grating designs and found that at a 10-15% randomization factor, light extraction efficiency could improve up to 230% from the original top and bottom grating case. Next, in an experiment with PKU, we mounted a 2-fold symmetric photonic crystal onto a PDMS hemi-cylinder by nano-imprinting to measure the transmission of light at angles from near tangential to normal. Overall transmission of light compared with the non-grating design increases overall light extraction efficiency when integrated over the range of angles. Finally, our research focused on the 3-fold symmetric photonic crystal grating structure and employed the use of 3-D FDTD methods and incoherent light sources to better study the effects of higher-ordered symmetry in grating design. Grating cells were discovered as the source of escaping light from the GaN LED model. The model revealed that light extraction efficiency and the far-field diffraction pattern could be estimated by the position of grating cells in the grating design.

Radio frequency (RF) and microwave switches are widely used in several different applications including radar, measurement systems, telecommunications, and other areas. An RF switch can control a radar’s transmit vs. receive mode, select the operating band, or direct an RF signal to different paths. In this study, a single pole eight throw (SP8T) switch using only Surface Mount (SMT) components is designed and simulated in Keysight’s Advanced Design System (ADS). Single pole eight throw is defined as one input and eight possible outputs. A star network configuration with series-shunt PIN diode switches is used to create the 8-way RF switch. There are other commercially available SP8T switches from MACOM, Skyworks, Analog Devices, and other vendors that operate around this bandwidth. However, this design uses SMT components and series-shunt diode configurations to create a device in the GHz range and power handling in the high 20 to 30 dBm range. This study modeled components in ADS, including the PIN diodes and the bias tees. The project also analyzed multiple layouts, finalizing the optimal design to meet specifications. The insertion loss, bandwidth, isolation, return loss, power handling, and switching speed are analyzed in the final design. Key specifications for this design are determined by comparing to other commercially available SP4T and SP8T switches from MACOM, Skyworks, Analog Devices, and other vendors, as well as developing an operational switch over the 2-18 GHz bandwidth. Additional specifications include limiting insertion loss to 2.0 dB maximum and maximizing isolation to 30 dB minimum. Switching speed and power handling specifications are also set to 20 ns and 23 dBm, respectively. Future projects will work on design fabrication and improvements to the manufactured switch.

Insight Photonic Solutions Inc. has continued to develop their patented VT-DBR laser design; these wavelength tunable lasers promise marked image-quality and acquisition time improvements in SS-OCT applications. To be well suited for SS-OCT, tunable lasers must be capable of producing a highly linear wavelength sweep across a tuning range well-matched to the medium being imaged; many different tunable lasers used in SS-OCT are compared to identify the optimal solution. This work electrically and spectrally characterizes two completely new all-semiconductor VT-DBR designs to compare, as well. The Neptune VT-DBR, an O-band laser, operates around the 1310 nm range and is a robust solution for many OCT applications. The VTL-2 is the first 1060 nm VT-DBR laser to be demonstrated. It offers improved penetration through water over earlier designs which operate at longer wavelengths (e.g. - 1550 nm and 1310 nm), making it an optimal solution for the relatively deep imaging requirements of the human eye; the non-invasive nature of OCT makes it the ideal imaging technology for ophthalmology. Each laser has five semiconductor P-N junction segments that collectively enable precise akinetic wavelength-tuning (i.e. - the tuning mechanism has no moving parts). In an SS-OCT system utilizing one of these laser packages, the segments are synchronously driven with high speed current signals that achieve the desired wavelength, power, and sweep pattern of the optical output. To validate the laser’s fast tuning response time necessary for its use in SS-OCT, a circuit model of each tuning section is created; each laser section is modeled as a diode with a significant lead inductance. The dynamic resistance, effective capacitance, and lead inductance of this model are measured as a function of bias current and the response time corresponding to each bias condition is determined. Tuning maps, spectral linewidths, and side-mode suppression ratio (SMSR) measurements important to SS-OCT performance are also collected. Measured response times vary from 700 ps to 2 ns for the Neptune and 1.2 to 2.3 ns for the VTL-2. Linewidth measurements range from 9 MHz to 124 MHz for the Neptune and 300 kHz to 2 MHz for the VTL-2. SMSR measurements greater than 38 dB and 40 dB were observed for the Neptune and VTL-2, respectively. Collectively, these results implicate the VT-DBR lasers as ideal tunable sources for use in SS-OCT applications.

This thesis provides a description of the analysis, design, and tests of an X-band RF Transmitter communication system for small satellites. X-band transmitter systems are becoming popular in the upcoming deep space missions. Most of the deep-space ground stations have been using X-band frequencies to receive or transmit signals. The X-band (<10 GHz) can offer lower atmospheric losses and up to a couple of Mbps data rates for multiple satellite operations. Nowadays, many small satellites have been using frequency bands such as VHF, UHF, L, and S-band frequencies for communication. From deep space to the ground station, the low-frequency ranges are inadequate in providing Mbps level data rates and enough bandwidth for deep space missions. The main focus of this thesis was the development of the subsystems such as gain block amplifier, Mixer, Bandpass Filter, and RF power amplifier. The subsystems were designed separately, then they were connected together to perform an end-to-end system test. One of the thesis aims is to design a manageable, power-efficient, and especially cost-effective X-band RF transmitter system. We presented a transmitter system demonstration in this thesis that can also be used in other orbits such as LEO, MEO, or GEO. Additionally, we presented a whole transceiver architecture. However, we focused on specifically designing transmitter subsystems. Initially, the top-level transmitter system objectives were determined. Then, the link budget was calculated. In the next stage, the RF front-end components were determined. Moreover, we simulated a transmitter system to foresee the output power, EVM, LO and IF frequency requirements, harmonics and spurious signals, cascaded gain and noise figure, and phase noise. From the calculated link budget, we were able to close the link by obtaining a 3 dB link margin. At the end of this calculation, we successfully obtained 1.45 Mbps for uplink data rate and 3.05 Kbps downlink rate. We used modulated signal to evaluate EVM. From the simulated transmitter chain, the output EVM was obtained as 1.456% RMS. From the filter board, we obtained an 8.5 dB insertion loss at 8.45 GHz. From the Mixer board, we’ve got 10 dB conversion loss and greater than 20 dB isolation between LO-RF ports. From the gain block amplifier board, we obtained a +9 dB gain at 8.45 GHz. The bandpass filter, mixer, and gain block amplifier boards were designed by using FR-4 dielectric material. We also designed a 5 W RF power amplifier board. From this board, we successfully obtained +37 dBm output at bias current at 200 mA. We reached almost 30% Power-added efficiency (PAE). In the end, we connected all the subsystems together using male-to-male SMA connectors to observe output by using a spectrum analyzer. We obtained transmitter output as +10.67 dBm at 8.45 GHz with a -10.7 dBm input power level. One benefit of this thesis is that its content has inspired other students in the department to develop similar subsystems. The other benefit of this work might be to inspire the way for next-generation X-band communication systems for use in small satellites, such as for deep space missions. This thesis might also be a reference source for institutions with a limited budget to develop a cost-effective satellite communication subsystem and contribute to space exploration for their educational and research objectives.

In this project, the performance aspects of a new early generation 1310 nm Sampled-Grating Distributed Bragg Reflector (SG-DBR) semiconductor laser are investigated. SG-DBR lasers are ideal for Source Swept Optical Coherence Tomography (SS-OCT), a Fourier-Domain based approach for OCT, necessitating a tunable wavelength source. Three internal sections control the frequency output for tuning, along with two amplifiers for amplitude control. These O-band SG-DBR devices are now being produced in research quantities. SG-DBR lasers have been produced at 1550 and 1600 nm for some times. Fundamental questions regarding the performance of the 1310 nm devices must be quantified. Standard metrics including the laser linewidth, amplitude modulation and frequency modulation responses are characterized. The intrinsic electrical parasitics of the laser diode segments and packaging are also investigated. In addition, testing fixture including a Thermal Electric Cooler (TEC) controller is for the characterization task. Measurements of these key metrics are essential to the enhancement of future devices, aiding in the optimization of more mature products.

<p>The multivariate cumulative sum (MCUSUM) and the multivariate exponentially weighted moving average (MEWMA) control charts are the two leading methods to monitor a multivariate process. This thesis focuses on the MEWMA control chart. Specifically, using the Markov chain method, we study in detail several aspects of the run length distribution both for the on- and off- target cases. Regarding the on-target run length analysis, we express the probability mass function of the run length distribution, the average run length (ARL), the variance of run length (V RL) and higher moments of the run length distribution in mathematically closed forms. In previous studies, with respect to the off-target performance for the MEWMA control chart, the process mean shift was usually assumed to take place at the beginning of the process. We extend the classical off-target case and introduce a generalization of the probability mass function of the run length distribution, the ARL and the V RL. What Prabhu and Runger (1996) proposed can be derived from our new model. By evaluating the off-target ARL values for the MEWMA control chart, we determine the optimal smoothing parameters by using the partition method that provides an easy algorithm to find the optimal smoothing parameters and study how they respond as the process mean shift time changes. We compare the ARL performance of the MEWMA control chart with that of the multivariate Shewhart control chart to see whether the MEWMA chart is still effective in detecting a small mean shift as the process mean shift time changes. In order to apply the model to semiconductor manufacturing processes, we use a bivariate normal distribution to generate sample data and compare the MEWMA control chart with the multivariate Shewhart control chart to evaluate how the MEWMA control chart behaves when a delayed mean shift happens. We also apply the variation transmission model introduced by Lawless et al. (1999) to the semiconductor manufacturing process and show an extension of the model to make our application to semiconductor manufacturing processes more realistic. All the programming and calculations were done in R</p> / Master of Science (MS)

<p>Over the past few years various successful miniaturization attempts of External Cavity Semiconductor Lasers (ECSL) were published. They built upon the rich literature of ECSL configurations that were extensively analyzed and improved upon since the 1960s. This was merged with the microfabrication techniques of 3D structures based on MEMS technology. The main drive for miniaturizing such tunable lasers in the recent past was the huge potential for such devices in all optical networks specifically as signal sources that enable Wavelength Division Multiplexing (WDM).<br />This thesis compares the different configurations chosen to build tunable lasers using MOEMS technology. Our criteria of comparison include wavelength tuning range, side mode suppression, tuning speed and device dimensions. Designs based on the simple ECSL with a movable external mirror suffered from the tradeoff between tuning range and Side Mode Suppression SMS. To overcome this limitation most designs adopted grating based tuning using the Littrow or Littman/Metcalf configurations. These configurations allow for much better tuning results but don’t lend themselves easily to miniaturization. The grating based devices were bulky and quite complicated to realize.<br />We propose the adoption of the Zhu/Cassidy double external cavity configuration. It retains the simplicity of the single external mirror configuration along with the tuning range and the SMS of including multiple tuning elements. In its original form this configuration suffered from mode hopping within the tuning range. Thorough simulation, design and experimental evidence is presented in this work to show that by extending the configuration to allow full control over both optical tuning elements this drawback can be eliminated.<br />Our proposed design would reduce the form factor to < 300μm x 200μm x 200μm. The voltage required to tune through all the modes is < 40V and the resonant frequency of the mirror is in the 10s of MHz order of magnitude. When coupled with a multimode laser of a sufficiently broad lasing profile this setup should enable a tuning range > 72nm with a SMS >20dB.</p> / Master of Applied Science (MASc)

<p>A modified liquid phase epitaxy (LPE) technique, called lateral diffusion LPE (LDLPE), is invented for low cost and high efficiency solar cell applications. Potentially, LDLPE is able to produce single crystalline silicon wafers directly from the raw material, rather than cutting wafers from single crystalline silicon ingots, therefore reducing the cost by avoiding the cutting and polishing processes.</p> <p>By using a traditional LPE method, the silicon is epitaxially grown on the silicon substrate by cooling down the saturated silicon/indium alloy solution from a high temperature. The silicon precipitates on the substrate since its solubility in the indium solvent decreases during the cooling process. A SiO₂ mask is formed on the (111) substrate with 100µm wide opening windows as seedlines. Silicon is epitaxially grown on the seedline and forms thick epitaxial lateral overgrowth (ELO) layers on the oxide mask. The ELO layers are silicon strips with an aspect ratio of 1:1 (width: thickness), approximately. The strip grows both laterally in width and vertically in thickness.</p> <p>The concept of LDLPE is to intentionally block the silicon diffusion path from the top of the seedline, but leave the lateral diffusion path from the bulk indium melt to the seedline. Theoretically, by using the LDLPE method, the silicon strip should have a larger aspect ratio, because the laterally growth in width is allowed but the vertical growth in thickness is limited. In addition, single crystalline silicon wafers can be achieved if the strip grows continuously.</p> <p>A graphite slide boat is designed to place a plate over the seedline to block the diffusion path of silicon atoms from the top of the seedline. After one growth cycle, silicon strips grown by LDLPE are wider than LPE strips but have similar thicknesses. The aspect ratios are increased from 1:1 to a number larger than 2:1. A Monte-Carlo random walk model is used to simulate the change of LDLPE strip aspect ratio caused by placing a plate over the seedline.</p> <p>Wetting seedline by indium melt is very critical for a successful growth. Due to the small space between the plate and seedline and the surface tension of the indium melt, the indium melt cannot flow into the small space. A pre-wetting technique is used to fill the space prior to loading the graphite boat into the tube furnace and solve the wetting problem successfully.</p> <p>The structure of a LDLPE silicon strip is characterized by X-ray diffraction. The electrical properties are characterized by Hall Effect measurement and photoconductive decay measurement. LDLPE silicon strips are (111) orientated single crystal and are the same orientation as the substrate. For the growth temperature of 950°C, the LDLPE strip has an estimated effective minority carrier lifetime of 30.9µs. The experimental results demonstrate that LDLPE is feasible for photovoltaic application if continuous growth and scaling up can be achieved.</p> / Doctor of Philosophy (PhD)

<p>This thesis presents the methods to extract modal parameters of semiconductor laser diodes based on a general zero-dimensional rate equation model. Three experiments, namely: the steady-state power versus injection current, small signal intensity modulation response and measurement of small signal response through dispersive optical fiber have been introduced, performed and analyzed under a sample space of 20 Multiple Quantum Well (MQW) Distributed feedback (DFB) laser of the same specification and from the same manufacturer. Testing software has been developed to perform the experiments , collect and analyze the data. The test results display an interesting Gaussian distributions that can be used to enhance further extraction process.</p> <p>An new method to extract the line-width enhancement factor has been purposed, which introduce a new way to extract rate equation parameters for laser lasing at the wave length for zero dispersion in optical fiber (1310nm). The new method circumvent the difficulty for measurement of small signal response through dispersive optical fiber method will not work due to the low fiber dispersion around this wavelength. This method has been validated and published at OSA conference.</p> / Master of Applied Science (MASc)