Kohlenstofffaserverstärkte Kohlenstoffmatrixverbunde werden hergestellt und untersucht mit den Zielen der Verbesserung ihrer technologischen und mikrostrukturellen Eigenschaften. Zur Erweiterung ihres industriellen Einsatz- potentials wurde ein schnelles und ökonomisches Herstellungsverfahren für diese Verbunde ausgewählt, prozessbegleitend untersucht und objektiviert. Die Herstellung erfolgte über die Polymerpyrolyseroute in Verbindung mit einer Nachverdichtung der fertigen porösen C/C-Verbunde durch einmalige Imprägnierung der offenen Poren mittels modifizierten, polymeren Silicium-Verbindungen (Polysilan, Polycarbosilan bzw. Tyranno). Diese polymeren Si-Verbindungen wurden durch Zugabe von Dicobaltoctacarbonyl [Co2(CO)8] modifiziert und anschließend einer thermischen Umsetzung unterzogen, d.h. zu SiC pyrolysiert. Die wirkungsvolle Nach- verdichtung der porösen C/C-Verbunde mittels modifiziertem Polysilan wird nachgewiesen und auf die katalytische Wirkung von Co2(CO)8 zur Bildung von Si-Si-Bindungen im Polysilan zurückgeführt. Im Gegensatz zur Nachverdichtung mit flüssigem Silicium wurde bei polymeren Si-Verbindungen keine Faserschädigungen aufgrund einer Reaktion zwischen C-Faser und Silicium und keine Si-Anreicherungen in den infiltrierten Poren gefunden. Darüber hinaus verbessert das Einbringen von Si und SiC in die Matrix das Oxidationsver- halten des Verbundes nachhaltig. Entgegen der wirkungsvollen Nachverdichtung mittels modifiziertem Polysilan ist keine effektive Abdichtung der C/C-Verbunde durch eine einmalige Infiltration von mit Co2(CO)8 modifiziertem Polycarbosilan bzw. Tyranno erzielbar. Die hergestellten Verbunde wurden eingehend mittels Lichtmikroskopie, REM, EDXS, TMA, DMA, TGA und Mikrobiegeversuch charakterisiert.

L'implantation des technologies de l'information (TI) constitue un enjeu majeur pour les établissements de santé. Avec le développement des systèmes de santé, il y a un besoin croissant d'intégrer les TI dans la production de soins. L'informatisation des processus cliniques vise à l'atteinte d'objectifs d'efficience et d'efficacité dans la gestion de la prise en charge du patient. Sa réussite présuppose l'adoption, l'utilisation et l'internalisation des TI à travers toutes les dimensions du système de santé. Cette recherche a pour but: (1) de modéliser les processus cliniques, (2) de quantifier l'utilisation d'un système d'information clinique (SIC), (3) d'identifier les déterminants individuels de la post-adoption du SIC et (4) d'analyser les attentes des professionnels de la santé. Notre modèle d'acceptabilité d'un SIC est une intégration de sept dimensions, issues des théories et modèles en évaluation des SI. Des questionnaires ont été administrés aux médecins et aux infirmières en France (HEGP) et au Québec (CHUS). La régression multiple et la modélisation par équations structurelles ont permis de tester nos liens de causalité. Les résultats montrent que l'utilisation d'un SIC diffère par profession et par site et que les professionnels semblent satisfaits du SIC. Les scores par dimensions du modèle sont jugés relativement acceptables. Les analyses démontrent que l'intention en post-adoption est déterminée par l'utilité et la satisfaction. La confirmation des attentes influence la satisfaction, l'utilité et la facilité perçue, la compatibilité et le support aux utilisateurs. Ces résultats positionnent l'identification et l'analyse des besoins au centre du processus d'acceptabilité des TI en santé

The cyclic prefix (CP) is usually adopted in single carrier frequency domain equalization (SC-FDE) system to avoid inter-block interference (IBI) and inter-symbol interference (ISI) in multipath fading channels. In addition, the use of CP also converts the linear convolution between the transmitted signal and the channel into a circular convolution, leading to significant decrease in receiver equalization. However, the use of CP reduces the bandwidth efficiency. Therefore the SC-FDE system without CP is investigated in this thesis. A number of schemes have been proposed to improve the performance of systems without CP, where both IBI and ICI are dramatically increased. Unfortunately, most of the existing schemes have extremely high computational complexity and are difficult to realize. In this thesis, a novel low-complexity CP reconstruction (CPR) scheme is proposed for interference cancellation, where the successive interference cancellation (SIC) and QR decomposition (QRD) are adopted. In addition, the system performance is further improved by using the fact that the interferences of different symbols are not the same. Simulation experiments are conducted to verify the system performance of the proposed scheme. It is shown that the proposed scheme can effectively reduce the interference, while maintain a low computational complexity.

This study focuses on various aspects of nanocrystals embedded in a dielectric matrix. In the first part of this work, a new approach with the use of Fourier Transform Infrared spectroscopy (FTIR) in the nanocrystal analysis was developed and presented. Si and Ge nanocrystals embedded in SiO2 matrix were mainly studied. This new approach is based on the analysis of structural variations of SiO2 matrix during the formation of semiconductor nanocrystlas. It is shown that the chemical and structural variations of the host matrix are directly related to the precipitation of nanocrystals in it. This correlation provides valuable information about the presences of nanocrystals in the matrix. In the second part of this work, fabrication of SiC films with and without Si nanocrystals inclusions was studied. With this aim, stoichiometric SiC and Si rich SiC thin films were fabricated by using magnetron co-sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. For SiC films, the structural and optical analyses were performed. For Si rich SiC films, the formation conditions of Si nanocrystals were investigated. Post annealing studies were carried out to track the evolution of the SiC matrix and formation of Si nanocrystals at different temperatures. Chemical and structural properties of the SiC host matrix were investigated with FTIR spectroscopy. Optimum conditions for the fabrication of stoichiometric SiC layers were determined. The crystallography of the nanocrystals was investigated by X-Ray Diffraction (XRD). The variation of the atomic concentrations and bond formations were investigated with X-Ray Photoelectron Spectroscopy (XPS). Raman spectroscopy and Transmission Electron Microscopy (TEM) were used to verify the formation of Si nanocrystals. We have shown that both single and multilayer Si nanocrystals can be fabricated in the amorphous SiC matrix for applications such as light emitting diodes and solar cells.

In the single carrier systems with cyclic-prefix (CP), the use of CP does not only eliminate the inter-block interference (IBI), but also convert linear convolution of the transmitted signal with the channel into circular convolution, which leads to the computation complexity of the frequency domain equalization (FDE) at the receiver is reduced. Unfortunately, the use of CP considerably decreases the bandwidth utilization. In order to increase the bandwidth utilization, the single carrier systems with frequency domain equalization (SC-FDE) is investigated. When FDE is used in a single carrier system without CP, the IBI is induced by the modulated symbols and then the bit-error rate (BER) is increased. To reduce the interference and then improve the system performance, a novel interference cancellation scheme is proposed in this thesis. After FDE, it is shown that interference is induced from the right end of a time domain signal block and most of the interference is located at both ends of an equalized time domain signal block. Based on this observation, the modulated symbols which induce the interference are detected according to the maximum-likelihood (ML) principle and then the interference is regenerated and eliminated. For simplifying the computation complexity, we further propose a successive interference cancellation scheme, which is implemented by using the Viterbi algorithm. The simulation results demonstrate that the proposed scheme improves BER performance significantly in SC-FDE systems. In addition, the proposed architecture has comparable BER performance with the SC-CP systems when the multi-path channel is exponentially decayed.

L'utilisation de germes Si pour l'épitaxie du SiC-3C génère de nombreux défauts dans les couches en<br />raison du désaccord de maille et de la dilatation thermique. Le SiC-3C peut aussi être déposé sur<br />substrats SiC-α(0001) en s'affranchissant des problèmes rencontré sur substrat Si. La difficulté de<br />contrôler la germination initiale génère cependant des macles qui sont difficiles à éviter ou éliminer<br />ensuite.<br />L'utilisation de l'épitaxie en phase vapeur comme technique de croissance n'a pas permis de<br />s'affranchir de ces macles malgré l'optimisation de la préparation de surface des germes SiC- α. En revanche, des couches de SiC-3C exemptes de macle ont été obtenues en utilisant une technique de<br />croissance originale, les mécanismes vapeur-liquid-solide, qui consiste à alimenter un bain Si-Ge avec<br />du propane.<br />La caractérisation des couches ainsi élaborées a montré une excellente qualité cristalline avec toutefois une incorporation non négligeable d'impuretés. Les éléments Al, Ge, B et Sn ont été dosés avec succès en utilisant des analyses par faisceaux d'ions accélérés, techniques peu conventionnelles pour SiC et présentant un challenge analytique.

Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. With such expectations, SiC is considered as the material of choice for modern power semiconductor devices for high efficiencies, high temperatures, and high power densities. Besides the material benefits, the typeof the power device also plays an important role in determining the system performance. Compared to the SiC metal-oxide semiconductor field-effect transistor (MOSFET) and bipolar junction transistor (BJT), the SiC junction field-effect transistor (JFET) is a very promising power switch, being a voltage-controlled device without oxide reliability issues. Its channel iscontrolled by a p-n junction. However, the present JFETs are not optimized yet with regard to on-state resistance, controllability of threshold voltage, and Miller capacitance. In this thesis, the state-of-the-art SiC JFETs are introduced with buried-grid (BG) technology.The buried grid is formed in the channel through epitaxial growth and etching processes. Through simulation studies, the new concepts of normally-on and -off BG JFETs with 1200 V blocking capability are investigated in terms of static and dynamic characteristics. Additionally, two case studies are performed in order to evaluate total losses on the system level. These investigations can be provided to a power circuit designer for fully exploiting the benefit of power devices. Additionally, they can serve as accurate device models and guidelines considering the switching performance. The BG concept utilized for JFETs has been also used for further development of SiC junctionbarrier Schottky (JBS) diodes. Especially, this design concept gives a great impact on high temperature operation due to efficient shielding of the Schottky interface from high electric fields. By means of simulations, the device structures with implanted and epitaxial p-grid formations, respectively, are compared regarding threshold voltage, blocking voltage, and maximum electric field at the Schottky interface. The results show that the device with an epitaxial grid can be more efficient at high temperatures than that with an implanted grid. To realize this concept, the device with implanted grid was optimized using simulations, fabricated and verified through experiments. The BG JBS diode clearly shows that the leakage current is four orders of magnitude lower than that of a pure Schottky diode at an operation temperature of 175 oC and 2 to 3 orders of magnitude lower than that of commercial JBS diodes. Finally, commercialized vertical trench JFETs are evaluated both in simulations andexperiments, while it is important to determine the limits of the existing JFETs and study their performance in parallel operation. Especially, the influence of uncertain parameters of the devices and the circuit configuration on the switching performance are determined through simulations and experiments. / Kiselkarbid (SiC) har en högre genombrottsfältstyrka än kisel, vilket möjliggör tunnare och mer högdopade driftområden jämfört med kisel. Följaktligen kan förlusterna reduceras jämfört med kiselbaserade omvandlarsystem. Dessutom tillåter SiC drift vid temperatures upp till 250 oC. Dessa utsikter gör att SiC anses vara halvledarmaterialet för moderna effekthalvledarkomponenter för hög verkningsgrad, hög temperature och hög kompakthet. Förutom materialegenskaperna är också komponenttypen avgörande för att bestämma systemets prestanda. Jämfört med SiC MOSFETen och bipolärtransistorn i SiC är SiC JFETen en mycket lovande component, eftersom den är spänningsstyrd och saknar tillförlitlighetsproblem med oxidskikt. Dess kanal styrs an en PNövergång. Emellertid är dagens JFETar inte optimerade med hänseende till on-state resistans, styrbarhet av tröskelspänning och Miller-kapacitans. I denna avhandling introduceras state-of-the-art SiC JFETar med buried-grid (BG) teknologi. Denna åstadkommes genom epitaxi och etsningsprocesser. Medelst simulering undersöks nya concept för normally-on och normally-off BG JFETar med blockspänningen 1200 V. Såvä statiska som dynamiska egenskper undersöks. Dessutom görs två fallstudier vad avser totalförluster på systemnivå. Dessa undersökningar kan vara värdefulla för en konstruktör för att till fullo utnyttja fördelarna av komponenterna. Dessutom kan resultaten från undersökningarna användas som komponentmodeller och anvisningar vad gäller switch-egenskaper. BG konceptet som använts för JFETar har också använts för vidareutveckling av så kallade JBS-dioder. Speciellt ger denna konstruktion stora fördelar vid höga temperature genom en effektiv skärmning av Schottkyövergången mot höga elektriska fält. Genom simuleringar har komponentstrukturer med implanterade och epitaxiella grids jämförst med hänseende till tröskelspänning, genombrottspänning och maximalt elektriskt fält vid Schottky-övergången. Resultaten visar att den epitaxiella varianten kan vara mer effektiv än den implanterade vid höga temperaturer. För att realisera detta concept optimerades en komponent med implanterat grid med hjälp av simuleringar. Denna component tillverkades sedan och verifierades genom experiment. BG JBS-dioden visar tydligt att läckströmmen är fyra storleksordningar lägre än för en ren Schottky-diod vid 175 oC, och två till tre storleksordningar lägre än för kommersiella JBS-dioder. Slutligen utvärderas kommersiella vertical trench-JFETar bade genom simuleringar och experiment, eftersom det är viktigt att bestämma gränserna för existerande JFETar och studera parallelkoppling. Speciellt studeras inverkan av obestämda parametrar och kretsens konfigurering på switchegenskaperna. Arbetet utförs bade genom simuleringar och experiment. / <p>QC 20150915</p>

Carbon fibre reinforced ceramic composites (Cf/C-SiC) have been explored as lightweight and durable disc in a friction brake. This composite was manufactured through infiltration of liquid silicon into a Cf/C perform. It has heterogeneous microstructure, composed of three key phases, silicon carbide, Cf/C, and un-reacted residual silicon. The development of the transfer layer on the friction surface of Cf/C-SiC was studied through microstructural image registration of the surface after a range of braking stops on a laboratory-scale dynamometer test rig. When an organic pad was used as the counter face brake pad, it was found that a steady transfer layer was developed in silicon regions right after initial stops; in carbon-fibre/carbon (Cf/C) regions and most of the silicon carbide region, the friction surfaces were unsteady and any possible friction transfer layers were hardly built up. Large voids and cracks/crevices likely became pools to quickly and efficiently collect the transferred materials generated by the friction, but the compacts formed inside the pools were susceptible to be stripped off by further braking operation. Three types of friction surfaces were generalized: type I, the friction transfer layer had a steady relationship with the matrix and respectable longevity; type II, the transfer layer had an unstable relationship with the matrix and poor durability; type III, the friction transfer layer had a steady relationship with the matrix but short lifetime. After testing against organic pads under the laboratory scale dynamometer testing condition, the friction surface of each key phase in Cf/C-SiC composites disc was studied by transmission electron microscopy (TEM). It was found that the transfer layer developed on Si consists of fine particles of metal silicides, silicates and minerals. The substrate damage of Si was not observed, while the precipitates having high oxygen content were found in the substrate. Formation of an interfacial bonding between transfer layer and silicon substrate is believed to be the key factor for the formation of a stable transfer layer on Si. However, the interfacial bonding between transferred materials and SiC was not detected. Kinks are common features developed on the friction surface of SiC. The interface between carbon fibre and carbon matrix was experienced mechanical damage, in form of microcracks, and the transferred material was developed in the interface. Instead of transfer layer, a thin amorphous film, produced by friction induced amorphisation of carbon fibre, was developed on top of carbon fibre.

De nos jours, les liaisons par fibres optiques monomode ou multimodes équipent de plus en plus de bâtiments, de lieux et sites de transports publics (gares, aéroports, autoroutes, ports ou plateformes multimodales). Ceci est dû au débit important qu'offre la fibre optique et à son atténuation très faible sur de longues distances. Afin de gérer au mieux la transmission au sein de la fibre optique, les performances de divers codes à une dimension 1D OOC et PC et deux dimensions 2D-MWOOC sur les récepteurs conventionnels ont été étudiées. Cependant, les performances obtenues restent limitées lorsque le nombre d'utilisateurs croit significativement. En ne tenant pas compte du bruit causé par les composants du système, la dégradation des performances est principalement due aux interférences d'accès multiples (IAM). De ce fait, nous proposons dans le cadre de cette thèse d'optimiser les performances du récepteur PIC en ajoutant un facteur de compensation qui permet de réduire au mieux les interférences d'accès multiples. Ceci est étudié avec les codes optiques à deux dimensions 2D-PC/PC que nous générons. Des expérimentations sur un banc d'essai optique en laboratoire sont effectuées pour illustrer la mise en oeuvre de multiservices. Une validation de certains résultats théoriques est également menée sur un simulateur dédié.

Carbon fiber-reinforced silicon carbide matrix (C/SiC) composite is a ceramic matrixcomposite (CMC) that has considerable promise for use in high-temperature structuralapplications. In this thesis, systematic numerical studies including the prediction of elasticand thermal properties, analysis and optimization of stresses and simulation ofhigh-temperature oxidations are presented for the investigation of C/SiC composites.A strain energy method is firstly proposed for the prediction of the effective elastic constantsand coefficients of thermal expansion (CTEs) of 3D orthotropic composite materials. Thismethod derives the effective elastic tensors and CTEs by analyzing the relationship betweenthe strain energy of the microstructure and that of the homogenized equivalent model underspecific thermo-elastic boundary conditions. Different kinds of composites are tested tovalidate the model.Geometrical configurations of the representative volume cell (RVC) of 2-D woven and 3-Dbraided C/SiC composites are analyzed in details. The finite element models of 2-D wovenand 3-D braided C/SiC composites are then established and combined with the stain energymethod to evaluate the effective elastic constants and CTEs of these composites. Numericalresults obtained by the proposed model are then compared with the results measuredexperimentally.A global/local analysis strategy is developed for the determination of the detailed stresses inthe 2-D woven C/SiC composite structures. On the basis of the finite element analysis, theprocedure is carried out sequentially from the homogenized composite structure of themacro-scale (global model) to the parameterized detailed fiber tow model of the micro-scale(local model). The bridge between two scales is realized by mapping the global analysisresult as the boundary conditions of the local tow model. The stress results by global/localmethod are finally compared to those by conventional finite element analyses.Optimal design for minimizing thermal residual stress (TRS) in 1-D unidirectional C/SiCcomposites is studied. The finite element models of RVC of 1-D unidirectional C/SiCIIcomposites with multi-layer interfaces are generated and finite element analysis is realized todetermine the TRS distributions. An optimization scheme which combines a modifiedParticle Swarm Optimization (PSO) algorithm and the finite element analysis is used toreduce the TRS in the C/SiC composites by controlling the multi-layer interfaces thicknesses.A numerical model is finally developed to study the microstructure oxidation process and thedegradation of elastic properties of 2-D woven C/SiC composites exposed to air oxidizingenvironments at intermediate temperature (T<900°C). The oxidized RVC microstructure ismodeled based on the oxidation kinetics analysis. The strain energy method is then combinedwith the finite element model of oxidized RVC to predict the elastic properties of composites.The environmental parameters, i.e., temperature and pressure are studied to show theirinfluences upon the oxidation behavior of C/SiC composites.